JP2007081365A5 - - Google Patents
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- JP2007081365A5 JP2007081365A5 JP2006114979A JP2006114979A JP2007081365A5 JP 2007081365 A5 JP2007081365 A5 JP 2007081365A5 JP 2006114979 A JP2006114979 A JP 2006114979A JP 2006114979 A JP2006114979 A JP 2006114979A JP 2007081365 A5 JP2007081365 A5 JP 2007081365A5
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- JP
- Japan
- Prior art keywords
- reaction vessel
- gas supply
- supply nozzle
- heat treatment
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000010438 heat treatment Methods 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 30
- 238000001514 detection method Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 239000007788 liquid Substances 0.000 claims 2
- 239000002994 raw material Substances 0.000 claims 2
- 230000000149 penetrating Effects 0.000 claims 1
- 229910052904 quartz Inorganic materials 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Description
本発明は、基板を反応容器内に搬入し、ガス供給ノズルから供給された処理ガスにより基板を熱処理例えば成膜処理する熱処理装置及び熱処理方法に関するものである。 The present invention relates to a heat treatment apparatus and a heat treatment method for carrying a substrate into a reaction vessel and heat-treating the substrate with a processing gas supplied from a gas supply nozzle.
本発明は、反応容器内に基板を搬入すると共に基板を加熱手段により加熱し、処理ガスを反応容器内に供給して基板に対して熱処理を行う熱処理装置において、
反応容器内に設けられ、基板に処理ガスを供給するためのガス供給ノズルと、
このガス供給ノズルに設けられ、ガス供給ノズル内のガスを予備加熱するための予備加熱ヒータと、を備えたことを特徴とする。
また他の発明は、反応容器と、この反応容器の長さ方向に沿って複数の基板を配列して保持する基板保持具と、反応容器の周囲に設けられた加熱手段と、を備え、基板保持具を反応容器内に搬入し、処理ガスを反応容器内に供給して基板に対して熱処理を行う熱処理装置において、
反応容器内に設けられ、基板に処理ガスを供給するためのガス供給ノズルと、
このガス供給ノズルに設けられ、ガス供給ノズル内のガスを予備加熱するための予備加熱ヒータと、を備えたことを特徴とする。
The present invention provides a heat treatment apparatus for carrying a heat treatment on a substrate by carrying the substrate into the reaction vessel and heating the substrate by a heating means and supplying a processing gas into the reaction vessel.
A gas supply nozzle provided in the reaction vessel for supplying a processing gas to the substrate;
A preheating heater provided in the gas supply nozzle for preheating the gas in the gas supply nozzle is provided.
Still another invention includes a reaction vessel, a substrate holder for arranging and holding a plurality of substrates along the length direction of the reaction vessel, and a heating means provided around the reaction vessel. In a heat treatment apparatus for carrying a heat treatment on a substrate by carrying a holder into the reaction vessel and supplying a processing gas into the reaction vessel,
A gas supply nozzle provided in the reaction vessel for supplying a processing gas to the substrate;
A preheating heater provided in the gas supply nozzle for preheating the gas in the gas supply nozzle is provided.
本発明の熱処理方法は、基板を反応容器内に搬入する工程と、
加熱手段により反応容器内の基板を加熱する工程と、
反応容器内に設けられたガス供給ノズルから処理ガスを反応容器内に供給する工程と、
ガス供給ノズル内の処理ガスを、ガス供給ノズルに設けた予備加熱ヒータにより加熱する工程と、を含むことを特徴とする。
また他の発明の熱処理方法は、複数の基板を配列して保持した基板保持具を反応容器内に搬入する工程と、
反応容器の周囲に設けられた加熱手段により反応容器内を加熱する工程と、
反応容器内に設けられたガス供給ノズルから処理ガスを反応容器内に供給する工程と、
ガス供給ノズル内の処理ガスを、ガス供給ノズルに設けた予備加熱ヒータにより加熱する工程と、を含むことを特徴とする。
The heat treatment method of the present invention includes a step of carrying a substrate into a reaction vessel,
Heating the substrate in the reaction vessel by a heating means;
Supplying a processing gas into the reaction vessel from a gas supply nozzle provided in the reaction vessel;
And a step of heating a processing gas in the gas supply nozzle by a preheating heater provided in the gas supply nozzle.
In another heat treatment method of the invention, a step of carrying a substrate holder holding a plurality of substrates arranged in a reaction container,
Heating the inside of the reaction vessel by a heating means provided around the reaction vessel;
Supplying a processing gas into the reaction vessel from a gas supply nozzle provided in the reaction vessel;
And a step of heating a processing gas in the gas supply nozzle by a preheating heater provided in the gas supply nozzle.
Claims (18)
反応容器内に設けられ、基板に処理ガスを供給するためのガス供給ノズルと、 A gas supply nozzle provided in the reaction vessel for supplying a processing gas to the substrate;
このガス供給ノズルに設けられ、ガス供給ノズル内のガスを予備加熱するための予備加熱ヒータと、を備えたことを特徴とする熱処理装置。 A heat treatment apparatus, comprising: a preheating heater provided in the gas supply nozzle for preheating the gas in the gas supply nozzle.
反応容器内に設けられ、基板に処理ガスを供給するためのガス供給ノズルと、
このガス供給ノズルに設けられ、ガス供給ノズル内のガスを予備加熱するための予備加熱ヒータと、を備えたことを特徴とする熱処理装置。 A reaction vessel, a substrate holder for arranging and holding a plurality of substrates along the length of the reaction vessel, and heating means provided around the reaction vessel, and the substrate holder is placed in the reaction vessel In a heat treatment apparatus for carrying in heat treatment on a substrate by supplying a processing gas into a reaction vessel and
A gas supply nozzle provided in the reaction vessel for supplying a processing gas to the substrate;
A heat treatment apparatus, comprising: a preheater provided in the gas supply nozzle for preheating the gas in the gas supply nozzle.
前記内管は第１部分と第２部分との間で分割されており、第１部分に設けられた前記給電線導出管は第１の部分の基端側において外管の外に引き出され、
第２部分における内管内にも予備加熱ヒータが設けられていることを特徴とする請求項５に記載の熱処理装置。 The gas supply nozzle includes a first portion extending in the length direction of the reaction vessel and a second portion extending in the radial direction of the reaction vessel from the base end side of the first portion and penetrating the reaction vessel.
The inner pipe is divided between a first part and a second part, and the feeder lead-out pipe provided in the first part is drawn out of the outer pipe on the base end side of the first part,
The heat treatment apparatus according to claim 5, wherein a preheater is also provided in the inner pipe in the second portion.
加熱手段により反応容器内の基板を加熱する工程と、 Heating the substrate in the reaction vessel by a heating means;
反応容器内に設けられたガス供給ノズルから処理ガスを反応容器内に供給する工程と、 Supplying a process gas into the reaction vessel from a gas supply nozzle provided in the reaction vessel;
ガス供給ノズル内の処理ガスを、ガス供給ノズルに設けた予備加熱ヒータにより加熱する工程と、を含むことを特徴とする熱処理方法。 And a step of heating a processing gas in the gas supply nozzle by a preheater provided in the gas supply nozzle.
反応容器の周囲に設けられた加熱手段により反応容器内を加熱する工程と、
反応容器内に設けられたガス供給ノズルから処理ガスを反応容器内に供給する工程と、
ガス供給ノズル内の処理ガスを、ガス供給ノズルに設けた予備加熱ヒータにより加熱する工程と、を含むことを特徴とする熱処理方法。 Carrying a substrate holder holding a plurality of substrates arranged in a reaction container;
Heating the inside of the reaction vessel by a heating means provided around the reaction vessel;
Supplying a processing gas into the reaction vessel from a gas supply nozzle provided in the reaction vessel;
And a step of heating a processing gas in the gas supply nozzle by a preheater provided in the gas supply nozzle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006114979A JP5017913B2 (en) | 2005-08-17 | 2006-04-18 | Heat treatment apparatus and heat treatment method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005236928 | 2005-08-17 | ||
| JP2005236928 | 2005-08-17 | ||
| JP2006114979A JP5017913B2 (en) | 2005-08-17 | 2006-04-18 | Heat treatment apparatus and heat treatment method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007081365A JP2007081365A (en) | 2007-03-29 |
| JP2007081365A5 true JP2007081365A5 (en) | 2010-08-12 |
| JP5017913B2 JP5017913B2 (en) | 2012-09-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006114979A Active JP5017913B2 (en) | 2005-08-17 | 2006-04-18 | Heat treatment apparatus and heat treatment method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5017913B2 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4465398B2 (en) * | 2007-07-20 | 2010-05-19 | 株式会社日立国際電気 | Substrate processing equipment |
| US8354135B2 (en) | 2008-03-17 | 2013-01-15 | Tokyo Electron Limited | Thermal processing apparatus, method for regulating temperature of thermal processing apparatus, and program |
| JP5049303B2 (en) * | 2008-03-17 | 2012-10-17 | 東京エレクトロン株式会社 | Heat treatment apparatus, temperature adjustment method for heat treatment apparatus, and program |
| JP5049302B2 (en) * | 2008-03-17 | 2012-10-17 | 東京エレクトロン株式会社 | Heat treatment apparatus, temperature adjustment method for heat treatment apparatus, and program |
| JP4895228B2 (en) * | 2008-07-31 | 2012-03-14 | 株式会社エピクエスト | Local pressure molecular beam epitaxy apparatus and operation method of molecular beam epitaxy apparatus |
| JP4954176B2 (en) * | 2008-10-08 | 2012-06-13 | 光洋サーモシステム株式会社 | Substrate heat treatment equipment |
| JP5403984B2 (en) * | 2008-10-08 | 2014-01-29 | 光洋サーモシステム株式会社 | Substrate heat treatment equipment |
| JP2011195863A (en) * | 2010-03-18 | 2011-10-06 | Mitsui Eng & Shipbuild Co Ltd | Atomic-layer deposition apparatus and atomic-layer deposition method |
| JP6706901B2 (en) * | 2015-11-13 | 2020-06-10 | 東京エレクトロン株式会社 | Processor |
| JP2018125466A (en) | 2017-02-02 | 2018-08-09 | 東京エレクトロン株式会社 | Ozone gas heating mechanism, substrate processing device, and substrate processing method |
| JP7340170B2 (en) * | 2019-06-25 | 2023-09-07 | 東京エレクトロン株式会社 | Gas introduction structure, heat treatment equipment and gas supply method |
| JP7212790B2 (en) * | 2019-08-20 | 2023-01-25 | 株式会社Kokusai Electric | SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, PROGRAM AND RECORDING MEDIUM |
| JP7000393B2 (en) * | 2019-09-25 | 2022-01-19 | 株式会社Kokusai Electric | Manufacturing method of substrate processing equipment, gas box and semiconductor equipment |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3129777B2 (en) * | 1990-11-16 | 2001-01-31 | 東京エレクトロン株式会社 | Heat treatment apparatus and heat treatment method |
| JPH0585890A (en) * | 1991-09-25 | 1993-04-06 | Matsushita Electric Ind Co Ltd | Apparatus for forming thin film |
| JPH0593274A (en) * | 1991-09-30 | 1993-04-16 | Kokusai Electric Co Ltd | Method and vertical device for forming cvd film |
| JP3423131B2 (en) * | 1995-11-20 | 2003-07-07 | 東京エレクトロン株式会社 | Heat treatment equipment and treatment equipment |
| JPH1187327A (en) * | 1997-06-25 | 1999-03-30 | Ebara Corp | Liquid material gasifying apparatus |
| JP3626421B2 (en) * | 2001-04-05 | 2005-03-09 | 株式会社東芝 | Method and apparatus for forming metal oxide thin film |
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2006
- 2006-04-18 JP JP2006114979A patent/JP5017913B2/en active Active
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