JP2007012678A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2007012678A JP2007012678A JP2005188279A JP2005188279A JP2007012678A JP 2007012678 A JP2007012678 A JP 2007012678A JP 2005188279 A JP2005188279 A JP 2005188279A JP 2005188279 A JP2005188279 A JP 2005188279A JP 2007012678 A JP2007012678 A JP 2007012678A
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Abstract
【解決手段】 半導体装置の製造方法は、(a)電極パッド16及びパッシベーション膜18を有する半導体基板10の上方に第1の樹脂層20bを形成する工程と、(b)第1の樹脂層20bをキュアする工程と、(c)キュア後の第1の樹脂層20よりも立ち上がりが緩やかとなる第2の樹脂層30aを第1の樹脂層20の少なくとも根元部に形成する工程と、(d)第2の樹脂層30bをキュアすることにより、第1及び第2の樹脂層20,30を含む樹脂突起40を形成する工程と、(e)電極パッド16と電気的に接続し、かつ樹脂突起40の上方を通る導電層50を形成する工程と、を含む。
【選択図】 図11
Description
(a)電極パッド及びパッシベーション膜を有する半導体基板の上方に第1の樹脂層を形成する工程と、
(b)前記第1の樹脂層をキュアする工程と、
(c)第2の樹脂層を前記第1の樹脂層の少なくとも根元部に形成する工程と、
(d)前記第2の樹脂層をキュアすることにより、前記第1及び第2の樹脂層を含むとともにキュア後の前記第1の樹脂層よりも立ち上がりが緩やかとなる樹脂突起を形成する工程と、
(e)前記電極パッドと電気的に接続し、かつ前記樹脂突起の上方を通る導電層を形成する工程と、
を含む。
前記(e)工程において、
前記導電層を形成する前に、Arガスにより、前記電極パッドの表面から酸化膜を除去するとともに、前記樹脂突起の表面の炭化を進行させ、
前記導電層を形成した後に、前記導電層をマスクとして前記樹脂突起を部分的に除去してもよい。
前記第2の樹脂層のキュア前の樹脂材料は、前記第1の樹脂層のキュア前の樹脂材料よりも前記パッシベーション膜に対する濡れ性が高くてもよい。
前記(c)工程において、
前記第2の樹脂層を前記第1の樹脂層の全周に形成してもよい。
前記(c)工程において、
前記第2の樹脂層を、前記半導体基板の上方に塗布し、その後エッチングすることにより前記第1の樹脂層の少なくとも根元部に形成してもよい。
前記(c)工程において、
前記第2の樹脂層を液滴吐出法により形成してもよい。
図1〜図13は、本発明の実施の形態に係る半導体装置の製造方法を説明する図である。
図14は、本発明の実施の形態に係る電子デバイスを示す図である。電子デバイス(例えば表示デバイス)1000は、半導体装置100を含む。図14に示す例では、電子デバイス1000は、半導体装置100と、樹脂フィルム等からなる第1の基板200と、ガラス等からなる第2の基板300と、を含む。半導体装置100は、例えば第1の基板200にフェースダウン実装され、詳しくは、第1の基板200に形成された配線パターンと、半導体装置100の樹脂コアバンプ60とが電気的に接続されている。半導体装置100と第1の基板200の間には、図示しない絶縁性接着剤(例えばNCF(Non Conductive Film)又はNCP(Non Conductive Paste))が設けられている。あるいは、第1の基板200を省略して、半導体装置100を第2の基板300にフェースダウン実装することもできる。電子デバイス1000の例としては、例えば、液晶ディスプレイ、プラズマディスプレイ、EL(Electrical Luminescence)ディスプレイなどが挙げられる。なお、図15には本発明の実施の形態に係る電子機器の一例としてノート型パーソナルコンピュータが示され、図16には携帯電話が示されている。
図17は、本発明の実施の形態の変形例に係る半導体装置の製造方法を説明する図である。本変形例では、樹脂突起140の形態が上述と異なる。
18…パッシベーション膜 20…第1の樹脂層 30…第2の樹脂層
40,42…樹脂突起 50…導電層 60…樹脂コアバンプ
100…半導体装置 120…第1の樹脂層 130…第2の樹脂層
140…樹脂突起
Claims (6)
- (a)電極パッド及びパッシベーション膜を有する半導体基板の上方に第1の樹脂層を形成する工程と、
(b)前記第1の樹脂層をキュアする工程と、
(c)第2の樹脂層を前記第1の樹脂層の少なくとも根元部に形成する工程と、
(d)前記第2の樹脂層をキュアすることにより、前記第1及び第2の樹脂層を含むとともにキュア後の前記第1の樹脂層よりも立ち上がりが緩やかとなる樹脂突起を形成する工程と、
(e)前記電極パッドと電気的に接続し、かつ前記樹脂突起の上方を通る導電層を形成する工程と、
を含む半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記(e)工程において、
前記導電層を形成する前に、Arガスにより、前記電極パッドの表面から酸化膜を除去するとともに、前記樹脂突起の表面の炭化を進行させ、
前記導電層を形成した後に、前記導電層をマスクとして前記樹脂突起を部分的に除去する半導体装置の製造方法。 - 請求項1又は請求項2記載の半導体装置の製造方法において、
前記第2の樹脂層のキュア前の樹脂材料は、前記第1の樹脂層のキュア前の樹脂材料よりも前記パッシベーション膜に対する濡れ性が高い半導体装置の製造方法。 - 請求項1から請求項3のいずれかに記載の半導体装置の製造方法において、
前記(c)工程において、
前記第2の樹脂層を前記第1の樹脂層の全周に形成する半導体装置の製造方法。 - 請求項1から請求項4のいずれかに記載の半導体装置の製造方法において、
前記(c)工程において、
前記第2の樹脂層を、前記半導体基板の上方に塗布し、その後エッチングすることにより前記第1の樹脂層の少なくとも根元部に形成する半導体装置の製造方法。 - 請求項1から請求項4のいずれかに記載の半導体装置の製造方法において、
前記(c)工程において、
前記第2の樹脂層を液滴吐出法により形成する半導体装置の製造方法。
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JP2005188279A JP4221606B2 (ja) | 2005-06-28 | 2005-06-28 | 半導体装置の製造方法 |
US11/446,731 US7246432B2 (en) | 2005-06-28 | 2006-06-05 | Method of manufacturing semiconductor device |
TW095121136A TWI299199B (en) | 2005-06-28 | 2006-06-14 | Method of manufacturing semiconductor device |
KR1020060054386A KR100730707B1 (ko) | 2005-06-28 | 2006-06-16 | 반도체 장치의 제조 방법 |
CNB2006101000714A CN100452337C (zh) | 2005-06-28 | 2006-06-28 | 半导体装置的制造方法 |
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JP2005188279A Expired - Fee Related JP4221606B2 (ja) | 2005-06-28 | 2005-06-28 | 半導体装置の製造方法 |
Country Status (5)
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US (1) | US7246432B2 (ja) |
JP (1) | JP4221606B2 (ja) |
KR (1) | KR100730707B1 (ja) |
CN (1) | CN100452337C (ja) |
TW (1) | TWI299199B (ja) |
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-
2005
- 2005-06-28 JP JP2005188279A patent/JP4221606B2/ja not_active Expired - Fee Related
-
2006
- 2006-06-05 US US11/446,731 patent/US7246432B2/en not_active Expired - Fee Related
- 2006-06-14 TW TW095121136A patent/TWI299199B/zh not_active IP Right Cessation
- 2006-06-16 KR KR1020060054386A patent/KR100730707B1/ko not_active IP Right Cessation
- 2006-06-28 CN CNB2006101000714A patent/CN100452337C/zh not_active Expired - Fee Related
Cited By (8)
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JP2005123268A (ja) * | 2003-10-14 | 2005-05-12 | Seiko Epson Corp | 光素子およびその製造方法、光素子と実装基板との実装構造、光素子と実装基板との実装方法、光モジュール、ならびに光伝達装置 |
JP4686967B2 (ja) * | 2003-10-14 | 2011-05-25 | セイコーエプソン株式会社 | 光素子の製造方法 |
JP2007019104A (ja) * | 2005-07-05 | 2007-01-25 | Seiko Epson Corp | 半導体装置の製造方法 |
JP2009044050A (ja) * | 2007-08-10 | 2009-02-26 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JP2014107315A (ja) * | 2012-11-26 | 2014-06-09 | Seiko Epson Corp | 半導体装置 |
US9748115B2 (en) | 2014-11-25 | 2017-08-29 | Seiko Epson Corporation | Electronic component and method for producing the same |
JP2016181647A (ja) * | 2015-03-25 | 2016-10-13 | セイコーエプソン株式会社 | 電子部品及びその製造方法 |
JP2018034396A (ja) * | 2016-08-31 | 2018-03-08 | セイコーエプソン株式会社 | 接合構造体、圧電デバイス、液体噴射ヘッド、液体噴射装置、及び、接合構造体の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI299199B (en) | 2008-07-21 |
US20060288572A1 (en) | 2006-12-28 |
TW200705643A (en) | 2007-02-01 |
KR100730707B1 (ko) | 2007-06-21 |
KR20070000986A (ko) | 2007-01-03 |
CN100452337C (zh) | 2009-01-14 |
CN1893007A (zh) | 2007-01-10 |
JP4221606B2 (ja) | 2009-02-12 |
US7246432B2 (en) | 2007-07-24 |
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