JP2007006495A - Baw装置 - Google Patents
Baw装置 Download PDFInfo
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- JP2007006495A JP2007006495A JP2006172398A JP2006172398A JP2007006495A JP 2007006495 A JP2007006495 A JP 2007006495A JP 2006172398 A JP2006172398 A JP 2006172398A JP 2006172398 A JP2006172398 A JP 2006172398A JP 2007006495 A JP2007006495 A JP 2007006495A
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- 230000000694 effects Effects 0.000 claims description 14
- 230000009022 nonlinear effect Effects 0.000 abstract description 5
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 9
- 230000035882 stress Effects 0.000 description 8
- 230000010287 polarization Effects 0.000 description 7
- 230000001747 exhibiting effect Effects 0.000 description 6
- 230000009021 linear effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
- H03H9/605—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02133—Means for compensation or elimination of undesirable effects of stress
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
【解決手段】特定の調波において非線形効果を低減するために、互いに逆平行に接続された第1のBAW共振器(72)と、第2のBAW共振器(74)とを有するBAW装置に関する。
【選択図】図1A
Description
図1A〜Cは、本発明の実施形態の断面図である。
32 圧電層
T 第1の電極、または上部電極
B 第2の電極、または下部電極
42 電気接地
44 信号入力
46 信号出力
48 第1の直列共振器
50 第2の直列共振器
52 第3の直列共振器
54 第1の平行共振器
56 第2の平行共振器
58 第3の平行共振器
60 第4の平行共振器
72 第1のBAW共振器
72P 第1のBAW共振器の圧電層
72T 第1のBAW共振器の第1の電極
72B 第1のBAW共振器の第2の電極
74 第2のBAW共振器
74P 第2のBAW共振器の圧電層
74T 第2のBAW共振器の第1の電極
74B 第2のBAW共振器の第2の電極
76 BAW装置の第1の電気端子
78 BAW装置の第2の電気端子
82 第1のBAW装置
84 第1のBAW装置の第1のBAW共振器
84T 第1のBAW装置の第1のBAW共振器の第1の電極
84B 第1のBAW装置の第1のBAW共振器の第2の電極
86 第1のBAW装置の第2のBAW共振器
86T 第1のBAW装置の第2のBAW共振器の第1の電極
86B 第1のBAW装置の第2のBAW共振器の第2の電極
88 第2のBAW装置
90 第2のBAW装置の第1のBAW共振器
90T 第2のBAW装置の第1のBAW共振器の第1の電極
90B 第2のBAW装置の第1のBAW共振器の第2の電極
92 第2のBAW装置の第2のBAW共振器
92T 第2のBAW装置の第2のBAW共振器の第1の電極
92B 第2のBAW装置の第2のBAW共振器の第2の電極
94 第3のBAW装置
96 第3のBAW装置の第1のBAW共振器
96T 第3のBAW装置の第1のBAW共振器の第1の電極
96B 第3のBAW装置の第1のBAW共振器の第2の電極
98 第3のBAW装置の第2のBAW共振器
98T 第3のBAW装置の第2のBAW共振器の第1の電極
98B 第3のBAW装置の第2のBAW共振器の第2の電極
100 従来のBAW共振器
100T 従来のBAW共振器の第1の電極
100B 従来のBAW共振器の第2の電極
102E 信号入力
102A 信号出力
102G 電気接地
Claims (10)
- 第1のBAW共振器(72,84,90,96)と第2のBAW共振器(74,86,92,98)とが逆平行に接続されていることを特徴とするBAW装置。
- 上記第1のBAW共振器(72,84,90,96)の共振周波数と、上記第2のBAW共振器(74,86,92,98)の共振周波数とは等しいことを特徴とする請求項1に記載のBAW装置。
- 上記第1のBAW共振器(72,84,90,96)の共振周波数と、上記第2のBAW共振器(74,86,92,98)の共振周波数とは、VCF効果により、同一量および同一方向へのシフトを示すことを特徴とする請求項2に記載のBAW装置。
- 上記第1のBAW共振器(72,84,90,96)のインピーダンスと、上記第2のBAW共振器(74,86,92,98)のインピーダンスとは等しいことを特徴とする請求項1から3の何れか1項に記載のBAW装置。
- 上記第1のBAW共振器(72,84,90,96)の静電容量と、上記第2のBAW共振器(74,86,92,98)の静電容量とは等しく、且つ、
BAW装置の静電容量の合計をCとすると、上記第1のBAW共振器(72,84,90,96)の静電容量と、上記第2のBAW共振器(74,86,92,98)の静電容量とはC/2値を有していることを特徴とする請求項1から4の何れか1項に記載のBAW装置。 - 上記第1のBAW共振器(72,84,90,96)と、上記第2のBAW共振器(74,86,92,98)とは、同一構造であることを特徴とする請求項1から5の何れか1項に記載のBAW装置。
- 共振器として構成されていることを特徴とする請求項1から6の何れか1項に記載のBAW装置。
- 上記第1のBAW共振器(72)の第1の電極(72T)は、上記第2のBAW共振器(74)の第2の電極(74B)と、BAW装置の第1の電気端子(76)とに接続されており、
上記第1のBAW共振器(72)の第2の電極(72B)は、上記第2のBAW共振器(74)の第1の電極(74T)と、BAW装置の第2の電気端子(78)とに接続されており、
BAW共振器(72、74)が、第1の電極(72T、74T)および第2の電極(72B、74B)に対して同一の極性を有していることを特徴とする請求項1から7の何れか1項に記載のBAW装置。 - フィルタとして用いられることを特徴とする請求項1から8の何れか1項に記載のBAW装置。
- デュプレクサとして用いられることを特徴とする請求項1から9の何れか1項に記載のBAW装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005028927A DE102005028927B4 (de) | 2005-06-22 | 2005-06-22 | BAW-Vorrichtung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007006495A true JP2007006495A (ja) | 2007-01-11 |
JP4422123B2 JP4422123B2 (ja) | 2010-02-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006172398A Expired - Fee Related JP4422123B2 (ja) | 2005-06-22 | 2006-06-22 | Baw装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7365619B2 (ja) |
EP (2) | EP2293439B9 (ja) |
JP (1) | JP4422123B2 (ja) |
KR (1) | KR100798168B1 (ja) |
CN (1) | CN101079610B (ja) |
DE (1) | DE102005028927B4 (ja) |
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US7515018B2 (en) | 2006-08-31 | 2009-04-07 | Martin Handtmann | Acoustic resonator |
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US9805966B2 (en) | 2014-07-25 | 2017-10-31 | Akoustis, Inc. | Wafer scale packaging |
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Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2001433C3 (de) * | 1970-01-07 | 1983-06-01 | Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka | Bandpaßfilter |
US4344010A (en) * | 1979-10-19 | 1982-08-10 | The United States Of America As Represented By The Secretary Of The Army | Acceleration resistant combination of opposite-handed piezoelectric crystals |
JPS60150310A (ja) * | 1984-01-17 | 1985-08-08 | Tdk Corp | 圧電振動子 |
US4633204A (en) * | 1984-08-29 | 1986-12-30 | Fujitsu Limited | Mechanical filter |
JP2790177B2 (ja) * | 1987-07-06 | 1998-08-27 | 株式会社村田製作所 | 電歪共振素子 |
JP2790180B2 (ja) * | 1987-12-29 | 1998-08-27 | 株式会社村田製作所 | 電歪共振装置 |
US5351021A (en) * | 1990-02-08 | 1994-09-27 | Murata Manufacturing Co., Ltd. | Ladder-type piezoelectric filter |
US5231327A (en) * | 1990-12-14 | 1993-07-27 | Tfr Technologies, Inc. | Optimized piezoelectric resonator-based networks |
JP3193403B2 (ja) * | 1991-07-18 | 2001-07-30 | 日本特殊陶業株式会社 | 梯子型圧電フィルタ |
JPH07240661A (ja) * | 1994-02-25 | 1995-09-12 | Ngk Spark Plug Co Ltd | 高周波用ラダー型圧電フィルタ |
JP3322169B2 (ja) * | 1997-06-12 | 2002-09-09 | 株式会社村田製作所 | エネルギー閉じ込め型厚み縦圧電共振子 |
US6437484B1 (en) * | 1998-12-24 | 2002-08-20 | Kyocera Corporation | Piezoelectric resonator |
KR20010081042A (ko) * | 1999-10-04 | 2001-08-25 | 니시무로 타이죠 | 탄성 표면파 장치 |
DE10009511A1 (de) * | 2000-02-29 | 2001-08-30 | Epcos Ag | Transversalmoden-gekoppeltes Resonatorfilter mit verringertem Platzbedarf |
JP2002198770A (ja) * | 2000-12-26 | 2002-07-12 | Murata Mfg Co Ltd | 圧電共振子 |
DE10149542A1 (de) | 2001-10-08 | 2003-04-17 | Infineon Technologies Ag | BAW-Resonator |
US6670866B2 (en) | 2002-01-09 | 2003-12-30 | Nokia Corporation | Bulk acoustic wave resonator with two piezoelectric layers as balun in filters and duplexers |
KR100486627B1 (ko) * | 2003-02-21 | 2005-05-03 | 엘지전자 주식회사 | 반도체 패키지 |
JP2005045694A (ja) | 2003-07-25 | 2005-02-17 | Sony Corp | 薄膜バルク音響共振子およびその製造方法 |
US7242270B2 (en) * | 2003-10-30 | 2007-07-10 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Decoupled stacked bulk acoustic resonator-based band-pass filter |
US6946928B2 (en) * | 2003-10-30 | 2005-09-20 | Agilent Technologies, Inc. | Thin-film acoustically-coupled transformer |
DE602004002363T2 (de) * | 2003-10-30 | 2007-09-20 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Akustisch gekoppelter Dünnschicht-Transformator mit piezoelektrischem Material, welches entgegengesetzte C-Axen Orientierung besitzt |
-
2005
- 2005-06-22 DE DE102005028927A patent/DE102005028927B4/de active Active
- 2005-07-01 US US11/174,446 patent/US7365619B2/en active Active
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2006
- 2006-06-22 EP EP10182723.6A patent/EP2293439B9/de not_active Expired - Fee Related
- 2006-06-22 CN CN2006101064665A patent/CN101079610B/zh active Active
- 2006-06-22 JP JP2006172398A patent/JP4422123B2/ja not_active Expired - Fee Related
- 2006-06-22 EP EP06012858A patent/EP1739829A3/de not_active Ceased
- 2006-06-22 KR KR1020060056590A patent/KR100798168B1/ko active IP Right Grant
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009010932A (ja) * | 2007-04-16 | 2009-01-15 | Avago Technologies General Ip (Singapore) Private Ltd | 二次高調波発生が減少されるバルク超音波(baw)フィルタおよびbawフィルタにおける二次高調波発生を減少させる方法 |
JP2012156907A (ja) * | 2011-01-27 | 2012-08-16 | Murata Mfg Co Ltd | 圧電デバイス |
US8878419B2 (en) | 2011-01-27 | 2014-11-04 | Murata Manufacturing Co., Ltd. | Piezoelectric device |
CN108288959A (zh) * | 2013-05-08 | 2018-07-17 | 天津大学 | 压电声波谐振器和滤波器 |
WO2015002047A1 (ja) * | 2013-07-02 | 2015-01-08 | 株式会社村田製作所 | 弾性表面波共振器及び弾性表面波フィルタ装置 |
US11038486B2 (en) | 2016-01-25 | 2021-06-15 | Taiyo Yuden Co., Ltd. | Acoustic wave device |
US10291206B2 (en) | 2016-06-10 | 2019-05-14 | Taiyo Yuden Co., Ltd. | Acoustic wave device |
US10505516B2 (en) | 2016-06-22 | 2019-12-10 | Taiyo Yuden Co., Ltd. | Filter and multiplexer |
US10396759B2 (en) | 2016-12-05 | 2019-08-27 | Taiyo Yuden Co., Ltd. | Filter and multiplexer |
Also Published As
Publication number | Publication date |
---|---|
DE102005028927B4 (de) | 2007-02-15 |
KR100798168B1 (ko) | 2008-01-24 |
EP2293439B9 (de) | 2014-06-11 |
EP1739829A2 (de) | 2007-01-03 |
EP2293439B1 (de) | 2013-10-23 |
KR20060134862A (ko) | 2006-12-28 |
US7365619B2 (en) | 2008-04-29 |
EP2293439A1 (de) | 2011-03-09 |
CN101079610B (zh) | 2012-04-25 |
JP4422123B2 (ja) | 2010-02-24 |
CN101079610A (zh) | 2007-11-28 |
EP1739829A3 (de) | 2007-10-17 |
DE102005028927A1 (de) | 2006-12-28 |
US20060290446A1 (en) | 2006-12-28 |
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