JP2006508521A - 溶剤浴と超臨界co2を用いたレジストの乾燥 - Google Patents
溶剤浴と超臨界co2を用いたレジストの乾燥 Download PDFInfo
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- JP2006508521A JP2006508521A JP2003569749A JP2003569749A JP2006508521A JP 2006508521 A JP2006508521 A JP 2006508521A JP 2003569749 A JP2003569749 A JP 2003569749A JP 2003569749 A JP2003569749 A JP 2003569749A JP 2006508521 A JP2006508521 A JP 2006508521A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/11—Treatments for avoiding stiction of elastic or moving parts of MEMS
- B81C2201/117—Using supercritical fluid, e.g. carbon dioxide, for removing sacrificial layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
随伴する図に関する以下の詳細な記載は、本発明の種々の態様に関する説明である。本発明は、ここに述べられる態様に限定されると解釈されるべきではない。それ故、以下の詳細な記載は、限定する意味に取られるべきではなく、本発明の範囲は随伴する請求の範囲によって定義づけられる。
Claims (20)
- ポリマーフィルムを有し、リンス液中に浸されている対象物を乾燥する方法であって、
a. 該対象物を該リンス液から取り出し、そして充分な量の該リンス液が該対象物から蒸発し得る前に、溶剤浴中に該対象物を据える工程、尚、ここで該溶剤浴中の溶剤の密度は、力に関して該ポリマーフィルムの向く方向に依存するものである、
b. 該対象物を該溶剤浴から取り出す工程、及び
c. 乾燥プロセスを実施する工程
を含む方法。 - 該目的物が集積回路を形成するための半導体ウェファーである、請求項1に記載の方法。
- 該ポリマーフィルムがフォトレジストフィルムである、請求項1に記載の方法。
- 該リンス液が水である、請求項1に記載の方法。
- 該溶剤が補助溶剤及び界面活性剤の少なくとも一方を含むものである、請求項1に記載の方法。
- 該力が重力及び向心力の少なくとも一方を含むものである、請求項1に記載の方法。
- 該溶剤の密度が該力に関して該ポリマーフィルムの向く方向に依存することが、該ポリマーフィルムが該力に関して実質上反対方向に向けられている場合に、該溶剤の密度が該リンス液の密度より大きいことを含むものである、請求項6に記載の方法。
- 該溶剤の密度が該力に関して該ポリマーフィルムの向く方向に依存することが、該ポリマーフィルムが該力に関して実質上同一方向に向けられている場合に、該溶剤の密度が該リンス液の密度より小さいことを含むものである、請求項6に記載の方法。
- 該乾燥工程の実施が超臨界流体乾燥プロセスの実施を含むものである、請求項1に記載の方法。
- 該超臨界流体乾燥プロセスの実施が該対象物の回転を含むものである、請求項9に記載の方法。
- ポリマーフィルムを有する対象物を乾燥する方法であって、
a. 該対象物をリンス浴から溶剤浴に移動させる間、該ポリマーフィルムの上に充分な量のリンス液を保持させておく工程、
b. 該溶剤浴中に該対象物を据える工程、尚ここで該溶剤浴中の溶剤の密度が力に関して該ポリマーフィルムの向く方向に依存する、
c. 該対象物を該溶剤浴から取り出す工程、及び
d. 超臨界流体乾燥プロセスを実施する工程
を含む方法。 - 該目的物が集積回路を形成するための半導体ウェファーである、請求項11に記載の方法。
- 該ポリマーフィルムがフォトレジストフィルムである、請求項11に記載の方法。
- 該リンス液が水である、請求項11に記載の方法。
- 該溶剤が補助溶剤及び界面活性剤の少なくとも一方を含むものである、請求項11に記載の方法。
- 該力が重力及び向心力の少なくとも一方を含むものである、請求項11に記載の方法。
- 該溶剤の密度が該力に関して該ポリマーフィルムの向く方向に依存することが、該ポリマーフィルムが該力に関して実質上反対方向に向けられている場合に、該溶剤の密度が該リンス液の密度より大きいことを含むものである、請求項16に記載の方法。
- 該溶剤の密度が該力に関して該ポリマーフィルムの向く方向に依存することが、該ポリマーフィルムが該力に関して実質上同一方向に向けられている場合に、該溶剤の密度が該リンス液の密度より小さいことを含むものである、請求項16に記載の方法。
- 該超臨界流体乾燥プロセスの実施が該対象物の回転を含むものである、請求項11に記載の方法。
- ポリマーフィルムを有する対象物を乾燥するための装置であって、
a. リンス浴、
b. 溶剤浴、
c. 該対象物を該リンス浴から該溶剤浴に移動させる間、該ポリマーフィルムの上に充分な量のリンス液を保持させておくための手段、
d. 該対象物を該溶剤浴中に据えるための手段、
e. 該対象物を該溶剤浴から取り出すための手段、及び
f. 超臨界流体乾燥プロセスを実施するための手段
を含む装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35775602P | 2002-02-15 | 2002-02-15 | |
US35862202P | 2002-02-20 | 2002-02-20 | |
PCT/US2003/004698 WO2003070846A2 (en) | 2002-02-15 | 2003-02-14 | Drying resist with a solvent bath and supercritical co2 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006508521A true JP2006508521A (ja) | 2006-03-09 |
JP2006508521A5 JP2006508521A5 (ja) | 2006-04-27 |
Family
ID=27760472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003569749A Pending JP2006508521A (ja) | 2002-02-15 | 2003-02-14 | 溶剤浴と超臨界co2を用いたレジストの乾燥 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6928746B2 (ja) |
EP (1) | EP1474723A2 (ja) |
JP (1) | JP2006508521A (ja) |
AU (1) | AU2003217547A1 (ja) |
WO (1) | WO2003070846A2 (ja) |
Families Citing this family (14)
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US20030183251A1 (en) * | 2001-04-24 | 2003-10-02 | Kabushiski Kaisha Kobe Seiko Sho | Process for drying an object having microstructure and the object obtained by the same |
US7011716B2 (en) * | 2003-04-29 | 2006-03-14 | Advanced Technology Materials, Inc. | Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products |
JP2004233954A (ja) * | 2002-12-02 | 2004-08-19 | Tokyo Ohka Kogyo Co Ltd | レジストパターン形成方法およびレジストパターン |
US7049053B2 (en) * | 2003-06-11 | 2006-05-23 | Intel Corporation | Supercritical carbon dioxide to reduce line edge roughness |
KR20060017414A (ko) * | 2004-08-20 | 2006-02-23 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자의 제조 방법 |
KR20060020044A (ko) * | 2004-08-30 | 2006-03-06 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 도너 기판의 제조방법 |
US7008853B1 (en) * | 2005-02-25 | 2006-03-07 | Infineon Technologies, Ag | Method and system for fabricating free-standing nanostructures |
JP4237184B2 (ja) * | 2005-03-31 | 2009-03-11 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
US7789971B2 (en) | 2005-05-13 | 2010-09-07 | Tokyo Electron Limited | Treatment of substrate using functionalizing agent in supercritical carbon dioxide |
DE102008048540A1 (de) * | 2008-09-15 | 2010-04-15 | Gebr. Schmid Gmbh & Co. | Verfahren zur Behandlung von Substraten, Substrat und Behandlungseinrichtung zur Durchführung des Verfahrens |
JP5426439B2 (ja) * | 2010-03-15 | 2014-02-26 | 株式会社東芝 | 超臨界乾燥方法および超臨界乾燥装置 |
JP5477131B2 (ja) * | 2010-04-08 | 2014-04-23 | 東京エレクトロン株式会社 | 基板処理装置 |
JP5620234B2 (ja) * | 2010-11-15 | 2014-11-05 | 株式会社東芝 | 半導体基板の超臨界乾燥方法および基板処理装置 |
DE102014100005A1 (de) | 2013-05-29 | 2014-12-04 | Amo Gmbh | Beschichtung aus Resist auf ein Substrat für ultrahochauflösende Lithographie |
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Also Published As
Publication number | Publication date |
---|---|
WO2003070846A2 (en) | 2003-08-28 |
AU2003217547A1 (en) | 2003-09-09 |
US20040035021A1 (en) | 2004-02-26 |
US6928746B2 (en) | 2005-08-16 |
AU2003217547A8 (en) | 2003-09-09 |
WO2003070846A3 (en) | 2003-11-27 |
EP1474723A2 (en) | 2004-11-10 |
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