JP2006348337A - 蒸着成膜装置および蒸着源 - Google Patents
蒸着成膜装置および蒸着源 Download PDFInfo
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- JP2006348337A JP2006348337A JP2005174526A JP2005174526A JP2006348337A JP 2006348337 A JP2006348337 A JP 2006348337A JP 2005174526 A JP2005174526 A JP 2005174526A JP 2005174526 A JP2005174526 A JP 2005174526A JP 2006348337 A JP2006348337 A JP 2006348337A
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 124
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- 239000000126 substance Substances 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims description 15
- 239000010408 film Substances 0.000 description 70
- 239000000463 material Substances 0.000 description 31
- 239000011521 glass Substances 0.000 description 27
- 239000012044 organic layer Substances 0.000 description 19
- 239000011368 organic material Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000001704 evaporation Methods 0.000 description 11
- 230000008020 evaporation Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】天面13aに複数の開口を備えた外箱13と、外箱13内に収納されるルツボ12と、外箱13を加熱する熱源14とを備えた蒸着源10を有する蒸着成膜装置において、ルツボ12には、外箱13の床面13bとの間に間隔dを設けるための脚部15が設けられている。また、外箱13に設けられた複数の開口11は、ライン状に配列されており、蒸着膜の成膜対象となる基板を、蒸着源10の上方に対向配置した状態で開口11の配列方向と直交する方向に相対的に移動させることにより、この基板上に蒸着膜が成膜されるように構成されている。
【選択図】図2
Description
Claims (5)
- 天面に複数の開口を備えた外箱と、当該外箱内に収納されるルツボと、当該外箱を加熱する熱源とを備えた蒸着源を有する蒸着成膜装置において、
前記ルツボには、前記外箱の床面との間に間隔を設けるための脚部が設けられている
ことを特徴とする蒸着成膜装置。 - 請求項1記載の蒸着成膜装置において、
前記外箱に設けられた複数の開口が、ライン状に配列されていると共に、
成膜対象となる基板を、前記蒸着源の上方に対向配置した状態で前記開口の配列方向と直交する方向に相対的に移動させて当該基板上に蒸着膜が成膜されるように構成された
ことを特徴とする蒸着成膜装置。 - 請求項2記載の蒸着成膜装置において、
前記脚部は、前記複数の開口の配列方向における両端側に設けられている
ことを特徴とする蒸着成膜装置。 - 請求項3記載の蒸着成膜装置において、
前記ルツボに設けられた脚部は、前記開口が配列されている領域よりも外側に位置する
ことを特徴とする蒸着成膜装置。 - 天面に複数の開口を備えた外箱と、蒸着物質を収容して当該外箱内に収納されるルツボと、当該外箱を加熱する熱源とを備えた蒸着源において、
前記ルツボには、前記外箱の床面との間に間隔を設けるための脚部が設けられている
ことを特徴とする蒸着源。
Priority Applications (1)
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JP2005174526A JP4696710B2 (ja) | 2005-06-15 | 2005-06-15 | 蒸着成膜装置および蒸着源 |
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JP2005174526A JP4696710B2 (ja) | 2005-06-15 | 2005-06-15 | 蒸着成膜装置および蒸着源 |
Publications (2)
Publication Number | Publication Date |
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JP2006348337A true JP2006348337A (ja) | 2006-12-28 |
JP4696710B2 JP4696710B2 (ja) | 2011-06-08 |
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JP2005174526A Expired - Fee Related JP4696710B2 (ja) | 2005-06-15 | 2005-06-15 | 蒸着成膜装置および蒸着源 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4468474B1 (ja) * | 2008-12-24 | 2010-05-26 | 三菱重工業株式会社 | 真空蒸着装置及び温度調整方法 |
EP2325348A1 (en) * | 2009-11-20 | 2011-05-25 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Device and method for thermal evaporation of silicon |
WO2015192402A1 (zh) * | 2014-06-16 | 2015-12-23 | 深圳市华星光电技术有限公司 | 侦测和防止高温金属材料泄漏的加热装置 |
JPWO2014174803A1 (ja) * | 2013-04-22 | 2017-02-23 | 株式会社Joled | El表示装置の製造方法 |
JPWO2015136859A1 (ja) * | 2014-03-11 | 2017-04-06 | 株式会社Joled | 蒸着装置及び蒸着装置を用いた蒸着方法、及びデバイスの製造方法 |
JP2020190012A (ja) * | 2019-05-21 | 2020-11-26 | 株式会社アルバック | 真空蒸着装置用の蒸着源 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6049355B2 (ja) | 2012-08-29 | 2016-12-21 | キヤノントッキ株式会社 | 蒸発源 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58197270A (ja) * | 1982-05-12 | 1983-11-16 | Mitsubishi Electric Corp | 蒸発源るつぼ |
JP2003513169A (ja) * | 1999-10-22 | 2003-04-08 | カート・ジェイ・レスカー・カンパニー | 真空で基板を被覆するための方法及び装置 |
JP2004095275A (ja) * | 2002-08-30 | 2004-03-25 | Sony Corp | 有機電界発光素子の製造装置 |
-
2005
- 2005-06-15 JP JP2005174526A patent/JP4696710B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58197270A (ja) * | 1982-05-12 | 1983-11-16 | Mitsubishi Electric Corp | 蒸発源るつぼ |
JP2003513169A (ja) * | 1999-10-22 | 2003-04-08 | カート・ジェイ・レスカー・カンパニー | 真空で基板を被覆するための方法及び装置 |
JP2004095275A (ja) * | 2002-08-30 | 2004-03-25 | Sony Corp | 有機電界発光素子の製造装置 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4468474B1 (ja) * | 2008-12-24 | 2010-05-26 | 三菱重工業株式会社 | 真空蒸着装置及び温度調整方法 |
WO2010073438A1 (ja) * | 2008-12-24 | 2010-07-01 | 三菱重工業株式会社 | 真空蒸着装置及び温度調整方法 |
JP2010150577A (ja) * | 2008-12-24 | 2010-07-08 | Mitsubishi Heavy Ind Ltd | 真空蒸着装置及び温度調整方法 |
KR101255424B1 (ko) * | 2008-12-24 | 2013-04-17 | 미츠비시 쥬고교 가부시키가이샤 | 진공 증착 장치 및 온도 조정 방법 |
US20120251722A1 (en) * | 2009-11-20 | 2012-10-04 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Device and method for thermal evaporation of silicon |
WO2011060905A3 (en) * | 2009-11-20 | 2011-08-11 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Device and method for thermal evaporation of silicon |
WO2011060905A2 (en) * | 2009-11-20 | 2011-05-26 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Device and method for thermal evaporation of silicon |
EP2325348A1 (en) * | 2009-11-20 | 2011-05-25 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Device and method for thermal evaporation of silicon |
JPWO2014174803A1 (ja) * | 2013-04-22 | 2017-02-23 | 株式会社Joled | El表示装置の製造方法 |
JPWO2015136859A1 (ja) * | 2014-03-11 | 2017-04-06 | 株式会社Joled | 蒸着装置及び蒸着装置を用いた蒸着方法、及びデバイスの製造方法 |
WO2015192402A1 (zh) * | 2014-06-16 | 2015-12-23 | 深圳市华星光电技术有限公司 | 侦测和防止高温金属材料泄漏的加热装置 |
JP2020190012A (ja) * | 2019-05-21 | 2020-11-26 | 株式会社アルバック | 真空蒸着装置用の蒸着源 |
JP7223632B2 (ja) | 2019-05-21 | 2023-02-16 | 株式会社アルバック | 真空蒸着装置用の蒸着源 |
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