JP2006347870A - シリコン含有基材用の耐食ebcの結合コートおよび同物を製造するプロセス - Google Patents
シリコン含有基材用の耐食ebcの結合コートおよび同物を製造するプロセス Download PDFInfo
- Publication number
- JP2006347870A JP2006347870A JP2006160405A JP2006160405A JP2006347870A JP 2006347870 A JP2006347870 A JP 2006347870A JP 2006160405 A JP2006160405 A JP 2006160405A JP 2006160405 A JP2006160405 A JP 2006160405A JP 2006347870 A JP2006347870 A JP 2006347870A
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- Prior art keywords
- silicon
- bond coat
- layer
- corrosion resistant
- coat layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010703 silicon Substances 0.000 title claims abstract description 74
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 74
- 238000005260 corrosion Methods 0.000 title claims abstract description 69
- 230000007797 corrosion Effects 0.000 title claims abstract description 68
- 239000000758 substrate Substances 0.000 title claims abstract description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 238000000576 coating method Methods 0.000 title claims abstract description 40
- 239000011248 coating agent Substances 0.000 title claims abstract description 33
- 230000004888 barrier function Effects 0.000 title claims abstract description 24
- 230000007613 environmental effect Effects 0.000 title abstract description 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 46
- 229910052914 metal silicate Inorganic materials 0.000 claims abstract description 33
- 230000008569 process Effects 0.000 claims abstract description 20
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 150000003377 silicon compounds Chemical class 0.000 claims description 49
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000012298 atmosphere Substances 0.000 claims description 12
- -1 rare earth silicon compounds Chemical class 0.000 claims description 11
- 229910052746 lanthanum Inorganic materials 0.000 claims description 9
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 239000010955 niobium Substances 0.000 claims description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 6
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 6
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 6
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 3
- TWRSDLOICOIGRH-UHFFFAOYSA-N [Si].[Si].[Hf] Chemical compound [Si].[Si].[Hf] TWRSDLOICOIGRH-UHFFFAOYSA-N 0.000 claims description 2
- MANYRMJQFFSZKJ-UHFFFAOYSA-N bis($l^{2}-silanylidene)tantalum Chemical compound [Si]=[Ta]=[Si] MANYRMJQFFSZKJ-UHFFFAOYSA-N 0.000 claims description 2
- GJIKIPCNQLUSQC-UHFFFAOYSA-N bis($l^{2}-silanylidene)zirconium Chemical compound [Si]=[Zr]=[Si] GJIKIPCNQLUSQC-UHFFFAOYSA-N 0.000 claims description 2
- 229910021343 molybdenum disilicide Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 2
- 229910021353 zirconium disilicide Inorganic materials 0.000 claims description 2
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 claims 3
- 239000010410 layer Substances 0.000 description 147
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 69
- 239000000377 silicon dioxide Substances 0.000 description 35
- 239000012720 thermal barrier coating Substances 0.000 description 27
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 26
- 239000000203 mixture Substances 0.000 description 21
- 239000002245 particle Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 16
- 238000007750 plasma spraying Methods 0.000 description 16
- 239000002002 slurry Substances 0.000 description 16
- 239000011153 ceramic matrix composite Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
- 239000000835 fiber Substances 0.000 description 11
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- 229910010293 ceramic material Inorganic materials 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 10
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 238000005240 physical vapour deposition Methods 0.000 description 9
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 8
- 229910052863 mullite Inorganic materials 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 7
- 239000011575 calcium Substances 0.000 description 7
- 229910052791 calcium Inorganic materials 0.000 description 7
- 238000005328 electron beam physical vapour deposition Methods 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- 229910052749 magnesium Inorganic materials 0.000 description 7
- 238000007751 thermal spraying Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 231100001010 corrosive Toxicity 0.000 description 6
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 6
- 229910052684 Cerium Inorganic materials 0.000 description 5
- 238000005422 blasting Methods 0.000 description 5
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052765 Lutetium Inorganic materials 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000003518 caustics Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000001805 chlorine compounds Chemical class 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
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- 239000011780 sodium chloride Substances 0.000 description 3
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
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- 229910052772 Samarium Inorganic materials 0.000 description 2
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- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 2
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- 238000010438 heat treatment Methods 0.000 description 2
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- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
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- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 229910002084 calcia-stabilized zirconia Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229950005499 carbon tetrachloride Drugs 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910002086 ceria-stabilized zirconia Inorganic materials 0.000 description 1
- JIHMVMRETUQLFD-UHFFFAOYSA-N cerium(3+);dioxido(oxo)silane Chemical compound [Ce+3].[Ce+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O JIHMVMRETUQLFD-UHFFFAOYSA-N 0.000 description 1
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- 238000007598 dipping method Methods 0.000 description 1
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- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 1
- 238000004942 thermal barrier coating method Methods 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 229910021352 titanium disilicide Inorganic materials 0.000 description 1
- FCTBKIHDJGHPPO-UHFFFAOYSA-N uranium dioxide Inorganic materials O=[U]=O FCTBKIHDJGHPPO-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
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- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
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Abstract
コーティングの厚さが薄く、雰囲気攻撃に耐えられる雰囲気バリアコーティングを提供する。
【解決手段】
物品(10)は、シリコン含有基材(30)、基材(30)に被さるケイ素化合物含有結合コート層(42)、および結合コート層(42)に被さる雰囲気バリアコーティング(EBC)(50)を含み、EBC(50)は、耐食金属ケイ酸塩を含む耐食外層(66)を含む。プロセスは、(a)前記基材(30)に被さるケイ素化合物含有結合コート層(42)を有するシリコン含有基材(30)を実現する工程と、(b)耐食金属ケイ酸塩を含む耐食層(66)を前記結合コート層(42)上に形成する工程とを含む。
【選択図】図2
Description
12 エーロフォイル
14 エーロフォイル12の高圧側
16 エーロフォイル12の低圧側
18 ダブテール
20 ブレード10の根元セクション
22 冷却用孔
30 シリコン含有基材
34 基材表面
42 ケイ素化合物含有結合コート層
50 雰囲気バリアコーティング(EBC)
58 コーティング50の任意選択の内部シリカスケール層
66 コーティング50の耐食外層
74 任意選択の遮熱コーティング(TBC)
Claims (10)
- 物品(10)であって、
シリコン含有基材(30)と、
前記基材(30)に載るケイ素化合物含有結合コート層(42)と、
前記結合コート層(42)を覆う雰囲気バリアコーティング(50)とを備え、前記雰囲気バリアコーティング(50)は、耐食金属ケイ酸塩を含む耐食外層(66)を含む物品(10)。 - 前記結合コート層(42)は、少なくとも1537℃の融点を有する金属ケイ素化合物を含む請求項1記載の物品(10)。
- 前記金属ケイ素化合物は、少なくとも1648℃の融点を有する請求項2記載の物品(10)。
- 前記金属ケイ素化合物は、クロム、モリブデン、ニオブ、タンタル、チタン、タングステン、ジルコニウム、希土類のケイ素化合物、またはそれらの親和性のある組合せを含む請求項1乃至3のいずれか記載の物品(10)。
- 前記金属ケイ素化合物は、チタントリシリサイド、クロムトリシリサイド、モリブデントリシリサイド、モリブデンジシリサイド、ニオブトリシリサイド、ニオブジシリサイド、ハフニウムジシリサイド、タンタルトリシリサイド、タンタルジシリサイド、タングステンジシリサイド、ジルコニウムジシリサイド、ガドリニウムジシリサイド、ランタンジシリサイド、ネオジムシリサイド、イッテルビウムトリシリサイド、またはそれらの親和性のある組合せを含む請求項1乃至4のいずれか記載の物品(10)。
- 前記結合コート層(42)は、前記基材(30)に隣接し、厚さが13から254ミクロンである請求項1乃至5のいずれか記載の物品(10)。
- タービンコンポーネント(12)の形態である請求項1乃至6のいずれか記載の物品(10)。
- 前記耐食金属ケイ酸塩は、ケイ酸イットリウム、ケイ酸スカンジウム、ケイ酸ジルコニウム、ケイ酸ハフニウム、希土類金属ケイ酸塩、またはそれらの組合せを含む請求項1乃至7のいずれか記載の物品(10)。
- プロセスであって、
(a)前記基材(30)に被さるケイ素化合物含有結合コート層(42)を有するシリコン含有基材(30)を実現する工程と、
(b)耐食金属ケイ酸塩を含む耐食層(66)を前記結合コート層(42)上に形成する工程とを含むプロセス。 - 形成された前記耐食層(66)は、最大127ミクロンまでの厚さを有する請求項9記載のプロセス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US11/150,097 US7354651B2 (en) | 2005-06-13 | 2005-06-13 | Bond coat for corrosion resistant EBC for silicon-containing substrate and processes for preparing same |
US11/150,097 | 2005-06-13 |
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JP2006347870A true JP2006347870A (ja) | 2006-12-28 |
JP2006347870A5 JP2006347870A5 (ja) | 2009-07-16 |
JP5067775B2 JP5067775B2 (ja) | 2012-11-07 |
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JP2006160405A Expired - Fee Related JP5067775B2 (ja) | 2005-06-13 | 2006-06-09 | シリコン含有基材用の耐食ebcの結合コートおよび同物を製造するプロセス |
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US (2) | US7354651B2 (ja) |
JP (1) | JP5067775B2 (ja) |
GB (1) | GB2427205B (ja) |
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GB0611269D0 (en) | 2006-07-26 |
US20060280952A1 (en) | 2006-12-14 |
US20080124479A1 (en) | 2008-05-29 |
JP5067775B2 (ja) | 2012-11-07 |
GB2427205A (en) | 2006-12-20 |
US7354651B2 (en) | 2008-04-08 |
GB2427205B (en) | 2011-06-15 |
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