JP2006261261A5 - - Google Patents
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- JP2006261261A5 JP2006261261A5 JP2005074280A JP2005074280A JP2006261261A5 JP 2006261261 A5 JP2006261261 A5 JP 2006261261A5 JP 2005074280 A JP2005074280 A JP 2005074280A JP 2005074280 A JP2005074280 A JP 2005074280A JP 2006261261 A5 JP2006261261 A5 JP 2006261261A5
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- JP
- Japan
- Prior art keywords
- polishing
- slurry
- wafer
- polished
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005498 polishing Methods 0.000 claims 53
- 239000002002 slurry Substances 0.000 claims 33
- 238000004519 manufacturing process Methods 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 claims 9
- 230000002040 relaxant effect Effects 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 4
- 239000011268 mixed slurry Substances 0.000 claims 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Claims (9)
前記ウェハを載置する研磨テーブルと、
前記研磨テーブル上にスラリーを滴下して供給する複数のスラリー供給ラインと、
前記複数のスラリー供給ラインにそれぞれ異なるスラリーを供給する複数のスラリーユ
ニットと、
を含むことを特徴とする化学機械研磨装置。 A chemical mechanical polishing apparatus for polishing the surface of a wafer,
A polishing table for mounting the wafer;
A plurality of slurry supply lines for dropping and supplying the slurry onto the polishing table;
A plurality of slurry units for supplying different slurries to the plurality of slurry supply lines;
A chemical mechanical polishing apparatus comprising:
部の段差を緩和するための高平坦化スラリーを供給する第一のスラリーユニットと、前記
ウェハの被研磨膜と比較してストッパー膜の研磨速度が小さい高選択スラリーを供給する
第二のスラリーユニットと、前記ウェハの被研磨膜およびストッパー膜の表面の段差を緩
和するための低選択スラリーを供給する第三のスラリーユニットと、を含むことを特徴と
する請求項1に記載の化学機械研磨装置。 Compared with the first slurry unit for supplying a highly planarized slurry for relaxing the step of the convex portion of the surface formed by the film to be polished of the wafer as the plurality of slurry units, and the film to be polished of the wafer A second slurry unit for supplying a high-selection slurry having a low polishing rate for the stopper film, and a third slurry for supplying a low-selection slurry for alleviating the level difference between the polishing target film and the stopper film on the wafer. The chemical mechanical polishing apparatus according to claim 1, further comprising a unit.
前記複数の研磨ステップのうちいずれかの研磨ステップに、異なる性質のスラリーを混
合した混合スラリーを用いる研磨ステップを含むことを特徴とする半導体装置の製造方法。 A method for manufacturing a semiconductor device, wherein the surface of a wafer is polished on the same polishing table by a plurality of successive polishing steps,
Wherein in any of the polishing step of the plurality of polishing steps, the method of manufacturing a semiconductor device characterized by comprising a polishing step using a mixed slurry obtained by mixing a slurry of different nature.
テーブル上に前記ウェハの被研磨膜により形成された表面の凸部の段差を緩和するための
高平坦化スラリーの割合を大きくして混合比を変化させることなく所定の混合比で滴下し
ながら混合して研磨する研磨ステップとすることを特徴とする請求項3に記載の半導体装置の製造方法。 In the polishing step using the mixed slurry, the ratio of the highly flattened slurry for relaxing the step of the convex portion of the surface formed by the polishing target film of the wafer on the polishing table with two types of slurry having different properties is set. 4. The method of manufacturing a semiconductor device according to claim 3, wherein the polishing step is a polishing step in which the polishing step is performed while adding and dropping while dropping at a predetermined mixing ratio without changing the mixing ratio.
テーブル上に混合比を変化させて滴下しながら混合して研磨する研磨ステップとすること
を特徴とする請求項3に記載の半導体装置の製造方法。 4. The polishing step using the mixed slurry is a polishing step in which two types of slurry having different properties are mixed and polished while dripping the slurry with different mixing ratios on the polishing table. Semiconductor device manufacturing method .
前記ウェハの表面を、前記ウェハの被研磨膜により形成された表面の凸部の段差を緩和
するための高平坦化スラリーを前記研磨テーブル上に滴下して研磨する第一研磨ステップ
と、
前記第一研磨ステップにより研磨された前記ウェハの表面を、前記高平坦化スラリーと
、前記ウェハの被研磨膜と比較してストッパー膜の研磨速度が小さい高選択スラリーとを
前記研磨テーブル上に混合比を変化させることなく所定の混合比で滴下しながら混合して
研磨する第二研磨ステップと、
前記第二研磨ステップにより研磨された前記ウェハの表面を、前記高選択スラリーと、
前記ウェハの被研磨膜およびストッパー膜の表面の段差を緩和するための低選択スラリー
とを高選択スラリーの割合が大から小になるように混合比を変化させて前記研磨テーブル
上に滴下しながら混合して研磨する第三研磨ステップと、
を含むことを特徴とする半導体装置の製造方法。 A method for manufacturing a semiconductor device in which a surface of a wafer is polished on the same polishing table by a plurality of successive polishing steps,
A first polishing step for polishing the surface of the wafer by dropping a highly planarized slurry on the polishing table for relaxing a step of a convex portion of the surface formed by the film to be polished of the wafer;
The surface of the wafer polished by the first polishing step is mixed on the polishing table with the highly planarized slurry and a highly selective slurry whose polishing rate of the stopper film is lower than the film to be polished of the wafer. A second polishing step for mixing and polishing while dropping at a predetermined mixing ratio without changing the ratio;
The surface of the wafer polished by the second polishing step, the highly selective slurry,
While dripping the low-selection slurry for relaxing the level difference between the polishing target film and the stopper film on the wafer onto the polishing table while changing the mixing ratio so that the ratio of the high-selection slurry is large to small. A third polishing step for mixing and polishing;
A method for manufacturing a semiconductor device, comprising:
リーを用いて研磨することを特徴とする請求項3〜6のいずれかに記載の半導体装置の製造方法。 The method of manufacturing a semiconductor device according to claim 3, wherein polishing is performed using a slurry mixed with pure water in any one of the plurality of polishing steps.
前記第一の研磨テーブル上で前記ウェハの表面を、前記第一のスラリーに第二のスラリーを加えて化学機械研磨する第二研磨ステップとを有する半導体装置の製造方法。 A method of manufacturing a semiconductor device, comprising: a second polishing step of chemically mechanically polishing the surface of the wafer on the first polishing table by adding a second slurry to the first slurry.
前記第一研磨ステップの後に前記第二研磨ステップを連続的に実施し、 Performing the second polishing step continuously after the first polishing step;
前記第一研磨ステップと前記第二研磨ステップとを行う化学機械研磨装置として、前記第一の研磨テーブルと、前記第一のスラリーを前記第一の研磨テーブルに供給する第一のスラリーユニットと、前記第二のスラリーを前記第一の研磨テーブルに供給する第二のスラリーユニットとを含むものを用いることを特徴とする請求項8に記載の半導体装置の製造方法。 As a chemical mechanical polishing apparatus that performs the first polishing step and the second polishing step, the first polishing table, a first slurry unit that supplies the first slurry to the first polishing table, 9. The method of manufacturing a semiconductor device according to claim 8, comprising a second slurry unit that supplies the second slurry to the first polishing table. 10.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005074280A JP2006261261A (en) | 2005-03-16 | 2005-03-16 | Apparatus and method for chemical mechanical polishing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005074280A JP2006261261A (en) | 2005-03-16 | 2005-03-16 | Apparatus and method for chemical mechanical polishing |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006261261A JP2006261261A (en) | 2006-09-28 |
JP2006261261A5 true JP2006261261A5 (en) | 2008-04-10 |
Family
ID=37100191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005074280A Pending JP2006261261A (en) | 2005-03-16 | 2005-03-16 | Apparatus and method for chemical mechanical polishing |
Country Status (1)
Country | Link |
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JP (1) | JP2006261261A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5990444B2 (en) * | 2012-11-01 | 2016-09-14 | 昭和電工株式会社 | Method for manufacturing silicon carbide semiconductor device |
CN109243976B (en) | 2013-01-11 | 2023-05-23 | 应用材料公司 | Chemical mechanical polishing apparatus and method |
US20160027668A1 (en) * | 2014-07-25 | 2016-01-28 | Applied Materials, Inc. | Chemical mechanical polishing apparatus and methods |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08139060A (en) * | 1994-11-04 | 1996-05-31 | Ricoh Co Ltd | Method of manufacturing semiconductor device and chemical machine polisher |
JPH10180616A (en) * | 1996-12-19 | 1998-07-07 | Hitachi Ltd | Polishing device and polishing method |
JP3575942B2 (en) * | 1997-02-28 | 2004-10-13 | 株式会社東芝 | Method for manufacturing semiconductor device |
US6204169B1 (en) * | 1997-03-24 | 2001-03-20 | Motorola Inc. | Processing for polishing dissimilar conductive layers in a semiconductor device |
JP2000208454A (en) * | 1999-01-18 | 2000-07-28 | Tokyo Seimitsu Co Ltd | Method of supplying abrasives to wafer polisher |
JP3033574B1 (en) * | 1999-02-15 | 2000-04-17 | 日本電気株式会社 | Polishing method |
JP3616989B2 (en) * | 2000-04-24 | 2005-02-02 | 日本電信電話株式会社 | Polishing apparatus and polishing method |
JP2001322899A (en) * | 2000-05-11 | 2001-11-20 | Matsushita Electric Ind Co Ltd | Gallium nitride-based compound semiconductor substrate and method of producing the same |
JP4310884B2 (en) * | 2000-05-12 | 2009-08-12 | 株式会社デンソー | Polishing method, abrasive composition and polishing apparatus |
JP2002184734A (en) * | 2000-12-19 | 2002-06-28 | Tokuyama Corp | Manufacturing method of semiconductor device |
JP2002324772A (en) * | 2001-04-25 | 2002-11-08 | Hitachi Ltd | Method and apparatus for manufacturing semiconductor device |
DE60320227T2 (en) * | 2002-02-20 | 2009-05-20 | Ebara Corp. | METHOD AND DEVICE FOR POLISHING |
JP4649871B2 (en) * | 2003-05-12 | 2011-03-16 | Jsr株式会社 | Chemical mechanical polishing method using chemical mechanical polishing kit |
-
2005
- 2005-03-16 JP JP2005074280A patent/JP2006261261A/en active Pending
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