JP2006247690A - Brazing filler metal, method for manufacturing semiconductor device using the same, and semiconductor device - Google Patents
Brazing filler metal, method for manufacturing semiconductor device using the same, and semiconductor device Download PDFInfo
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本発明は、半導体素子のダイボンディングや、電子部品の組立て等に用いられるろう材に関し、特に、Ｐｂを含まないろう材、および、かかるろう材を用いた半導体装置の製造方法、ならびに半導体装置に関する。 The present invention relates to a brazing material used for die bonding of semiconductor elements, assembly of electronic components, and the like, and more particularly to a brazing material not containing Pb, a method of manufacturing a semiconductor device using such a brazing material, and a semiconductor device. .
半導体素子や高周波素子等の電子素子を、リードフレーム等にダイボンディングして、半導体装置あるいは電子部品を組み立てる際に、融点が３００℃前後のＡｕ／２０質量％Ｓｎ（Ａｕが２０質量％で、残部がＳｎ）に代表されるＡｕ系ろう材や、Ｐｂ／５質量％Ｓｎ（Ｐｂが５質量％で、残部がＳｎ）に代表されるＰｂ系ろう材が使用されている。 When an electronic element such as a semiconductor element or a high-frequency element is die-bonded to a lead frame or the like to assemble a semiconductor device or an electronic component, the melting point is about 300 ° C. Au / 20 mass% Sn (Au is 20 mass%, An Au-based brazing material whose balance is represented by Sn) and a Pb-based brazing material represented by Pb / 5 mass% Sn (Pb is 5 mass% and the balance is Sn) are used.
組み立てた半導体装置をプリント基板へ実装する際の加熱温度は、２４０〜２６０℃であり、加熱時間は１０秒以下である。したがって、融点が３００℃前後である前記Ａｕ系ろう材またはＰｂ系ろう材をダイボンディング用ろう材として使用することにより、半導体装置をプリント基板へ実装する時にダイボンディング用ろう材が再溶解してしまうことを防止でき、ダイボンディング部の性能劣化要因となるボイドが接合部に発生してしまうことを防止できる。 The heating temperature for mounting the assembled semiconductor device on the printed circuit board is 240 to 260 ° C., and the heating time is 10 seconds or less. Therefore, by using the Au-based brazing material or Pb-based brazing material having a melting point of about 300 ° C. as the die bonding brazing material, the die bonding brazing material is re-dissolved when the semiconductor device is mounted on the printed circuit board. It can be prevented that voids that cause performance deterioration of the die bonding portion are generated in the bonded portion.
また、電子部品の組立てにおいても、後工程で行われるステップろう付けにおいて２２０〜２６０℃にまで加熱する必要がある。そのため、前工程で用いたろう材が再溶解するおそれがあり、これを防止するため、前述のような高い融点のろう材が電子部品の組立てにおいても使用される。 Also in the assembly of electronic components, it is necessary to heat to 220 to 260 ° C. in step brazing performed in a later process. Therefore, there is a possibility that the brazing material used in the previous process may be re-dissolved. In order to prevent this, the high melting point brazing material as described above is also used in assembling electronic components.
しかし、半導体素子は４３０℃を超える高温にさらされると破壊してしまうおそれがある。このため、前記ろう材は、４３０℃以下の温度で溶融する必要があり、その融点を４２５℃以下とする必要がある。 However, the semiconductor element may be destroyed when exposed to a high temperature exceeding 430 ° C. For this reason, the brazing material needs to be melted at a temperature of 430 ° C. or lower, and its melting point needs to be 425 ° C. or lower.
一方、Ａｕ系ろう材は、価格が高いという問題があり、Ｐｂ系ろう材は、環境汚染という問題がある。したがって、安価で、Ｐｂを含まず、接合後の再溶解温度が２６０℃以上であり、かつ、４３０℃以下でろう付けが可能であり、さらに、良好な濡れ性を有するろう材が求められていた。 On the other hand, the Au brazing material has a problem of high price, and the Pb brazing material has a problem of environmental pollution. Therefore, there is a demand for a brazing material that is inexpensive, does not contain Pb, has a remelting temperature after bonding of 260 ° C. or higher, can be brazed at 430 ° C. or lower, and has good wettability. It was.
こうした要望をかなえるべく、例えば、Ｆｅ、Ｎｉのうちの少なくとも１種を０．００５〜５．０質量％含むＳｎ系はんだ材に、Ａｇ：０．１〜２０質量％、Ｃｕ：０．００５〜９質量％、Ｓｂ：０．１〜１５質量％を適量含有させる技術が開示されている（特許文献１（特開２００１−１４４１１１号公報））。 In order to meet these demands, for example, Sn: 0.1-20% by mass, Cu: 0.005 to Sn-based solder material containing 0.005 to 5.0% by mass of at least one of Fe and Ni. A technique for containing an appropriate amount of 9% by mass and Sb: 0.1 to 15% by mass is disclosed (Patent Document 1 (Japanese Patent Laid-Open No. 2001-144111)).
また、Ｓｂ：１１．０〜２０．０質量％、Ｐ：０．０１〜０．２質量％を含むＳｎ／Ｓｂ系ダイボンディング用はんだ材に、ＣｕおよびＮｉの少なくとも１種を０．００５〜５．０質量％を適宜含有させる技術が開示されている（特許文献２（特開２００１−２８４７９２号公報））。 Further, at least one of Cu and Ni is added to 0.005 to Sn / Sb die bonding solder material containing Sb: 11.0 to 20.0 mass% and P: 0.01 to 0.2 mass%. A technique for appropriately containing 5.0% by mass is disclosed (Patent Document 2 (Japanese Patent Laid-Open No. 2001-284792)).
特許文献１および特許文献２に記載のＳｎ／Ｓｂ系合金をろう材として用いた場合、これらの固相線温度は比較的高いため、半導体装置をプリント基板に、はんだを用いて実装する際の高温（２４０〜２６０℃）にさらしても、ダイボンディング部の再溶融を回避できる場合もある。しかし、実装温度の上限である２６０℃まで加熱すると接合部の一部が再溶融するという問題点がある。 When the Sn / Sb alloy described in Patent Document 1 and Patent Document 2 is used as a brazing material, these solidus temperatures are relatively high. Therefore, when mounting a semiconductor device on a printed circuit board using solder, Even when exposed to high temperatures (240 to 260 ° C.), re-melting of the die bonding part may be avoided. However, when heated to 260 ° C. which is the upper limit of the mounting temperature, there is a problem that a part of the joint is remelted.
さらに、Ｐｂを含まないはんだ合金として、Ｚｎ−Ａｌ−Ｍｇ−Ｇａ合金が開示されている（特許文献３（特開平１１−１７２３５２号））。しかし、Ｐｂ系ろう材より濡れ性が劣るという問題点がある。 Furthermore, a Zn—Al—Mg—Ga alloy is disclosed as a solder alloy not containing Pb (Patent Document 3 (Japanese Patent Laid-Open No. 11-172352)). However, there is a problem that wettability is inferior to that of Pb brazing filler metal.
また、セラミックパッケージと気密封止用キャップとを接合するために、セラミックパッケージにＮｉ−Ｃｏ合金めっきを施し、さらにＳｎ／Ａｇはんだを用いて接合することで、Ｎｉ、ＣｏをＳｎと化合物化させ、接合部を高融点化し、接合部の再溶融を回避する技術が開示されている（非特許文献１）。さらに、Ｎｉ−Ｃｏ合金めっき表面にＡｕめっきを施すことで、Ｎｉ、Ｃｏ、Ｓｎからなる化合物の成長速度を速めることも開示されている（非特許文献１）。 In addition, in order to join the ceramic package and the hermetic sealing cap, Ni—Co alloy plating is applied to the ceramic package, and further, Sn / Ag solder is used for joining, thereby compounding Ni and Co with Sn. A technique for increasing the melting point of a joint and avoiding remelting of the joint is disclosed (Non-Patent Document 1). Furthermore, it is also disclosed that the growth rate of a compound composed of Ni, Co, and Sn is increased by applying Au plating to the Ni—Co alloy plating surface (Non-patent Document 1).
しかし、この技術においては、被接合物にＮｉ−Ｃｏ合金めっきをすることが必要であるが、Ｎｉ−Ｃｏ合金めっきはコストがかかるという問題点があり、また、Ａｕめっきもコストがかかるという問題点がある。このため、この技術は実用化が困難である。 However, in this technique, it is necessary to perform Ni—Co alloy plating on the object to be joined, but there is a problem that Ni—Co alloy plating is expensive, and Au plating is also expensive. There is a point. For this reason, this technique is difficult to put into practical use.
本発明は、かかる問題点に鑑みてなされたものであって、Ｐｂを含まず、２６０℃に加熱しても溶融しない接合部が得られ、かつ、濡れ性に優れ、コストも安いろう材を提供することを目的とする。また、該ろう材を用いた半導体装置およびその製造方法を提供することを目的とする。 The present invention has been made in view of such problems, and a brazing material that does not contain Pb, does not melt even when heated to 260 ° C., has excellent wettability, and is low in cost. The purpose is to provide. It is another object of the present invention to provide a semiconductor device using the brazing material and a manufacturing method thereof.
本発明に係るろう材の第一態様は、Ａｇ：２〜５質量％と、Ｃｏ：１〜２０質量％とを含み、残部がＳｎおよび不可避不純物であることを特徴とするＮｉめっき基板用ろう材である。 A first aspect of the brazing filler metal according to the present invention is a brazing material for a Ni-plated substrate, comprising Ag: 2 to 5% by mass and Co: 1 to 20% by mass, the balance being Sn and inevitable impurities It is a material.
本発明に係るろう材の第二態様は、Ａｇ：２〜５質量％と、Ｃｏ：１〜２０質量％と、Ｐ：０．００１〜０．５質量％とを含み、残部がＳｎおよび不可避不純物であることを特徴とするＮｉめっき基板用ろう材である。 The second aspect of the brazing filler metal according to the present invention includes Ag: 2 to 5% by mass, Co: 1 to 20% by mass, and P: 0.001 to 0.5% by mass, with the balance being Sn and inevitable. It is a brazing material for a Ni plating substrate characterized by being an impurity.
本発明に係るろう材の第三態様は、Ａｇ：２〜５質量％と、Ｃｏ：１〜２０質量％と、Ｓｂ、Ｃｕ、ＦｅおよびＮｉのうちの１種以上を合計で０．０１〜５質量％とを含み、残部がＳｎおよび不可避不純物であることを特徴とするＮｉめっき基板用ろう材である。 The third aspect of the brazing filler metal according to the present invention is Ag: 2-5 mass%, Co: 1-20 mass%, and one or more of Sb, Cu, Fe and Ni in a total of 0.01- A brazing material for a Ni-plated substrate, comprising 5% by mass and the balance being Sn and inevitable impurities.
本発明に係るろう材の第四態様は、Ａｇ：２〜５質量％と、Ｃｏ：１〜２０質量％と、Ｐ：０．００１〜０．５質量％とを含み、さらにＳｂ、Ｃｕ、ＦｅおよびＮｉのうちの１種以上を合計で０．０１〜５質量％含み、残部がＳｎおよび不可避不純物であることを特徴とするＮｉめっき基板用ろう材である。 The fourth aspect of the brazing filler metal according to the present invention includes Ag: 2 to 5% by mass, Co: 1 to 20% by mass, and P: 0.001 to 0.5% by mass, and Sb, Cu, A brazing material for a Ni-plated substrate, comprising 0.01 to 5% by mass in total of at least one of Fe and Ni, the balance being Sn and inevitable impurities.
本発明に係るろう材の第五態様は、Ｓｎ−Ａｇ合金中に平均粒径１〜４０μｍのＣｏ粉が分散しているか、または、Ｓｎ中に平均粒径１〜４０μｍのＡｇ−Ｃｏ合金粉が分散しているろう材であって、Ａｇ：２〜５質量％と、Ｃｏ：１〜２０質量％とを含み、残部がＳｎおよび不可避不純物であることを特徴とするＮｉめっき基板用ろう材である。 A fifth aspect of the brazing filler metal according to the present invention is such that Co powder having an average particle diameter of 1 to 40 μm is dispersed in the Sn—Ag alloy, or Ag—Co alloy powder having an average particle diameter of 1 to 40 μm in Sn. A brazing material for Ni-plated substrate, comprising Ag: 2 to 5% by mass and Co: 1 to 20% by mass, with the balance being Sn and inevitable impurities It is.
本発明に係るろう材の第六態様は、Ｓｎ−Ａｇ系合金中に平均粒径１〜４０μｍのＣｏ粉が分散しているか、または、Ｓｎ系合金中に平均粒径１〜４０μｍのＡｇ−Ｃｏ合金粉が分散しているろう材であって、Ａｇ：２〜５質量％と、Ｃｏ：１〜２０質量％と、Ｐ：０．００１〜０．５質量％とを含み、残部がＳｎおよび不可避不純物であることを特徴とするＮｉめっき基板用ろう材である。 In the sixth aspect of the brazing material according to the present invention, Co powder having an average particle diameter of 1 to 40 μm is dispersed in the Sn—Ag alloy, or Ag— having an average particle diameter of 1 to 40 μm in the Sn alloy. A brazing material in which Co alloy powder is dispersed, Ag: 2 to 5% by mass, Co: 1 to 20% by mass, and P: 0.001 to 0.5% by mass, with the balance being Sn And it is a brazing material for Ni plating board | substrate characterized by being an inevitable impurity.
本発明に係るろう材の第七態様は、Ｓｎ−Ａｇ系合金中に平均粒径１〜４０μｍのＣｏ粉が分散しているか、または、Ｓｎ系合金中に平均粒径１〜４０μｍのＡｇ−Ｃｏ合金粉が分散しているろう材であって、Ａｇ：２〜５質量％と、Ｃｏ：１〜２０質量％と、Ｓｂ、Ｃｕ、ＦｅおよびＮｉのうちの１種以上を合計で０．０１〜５質量％とを含み、残部がＳｎおよび不可避不純物であることを特徴とするＮｉめっき基板用ろう材である。 In the seventh aspect of the brazing filler metal according to the present invention, Co powder having an average particle diameter of 1 to 40 μm is dispersed in the Sn—Ag alloy, or Ag— having an average particle diameter of 1 to 40 μm in the Sn alloy. A brazing material in which Co alloy powder is dispersed, Ag: 2 to 5% by mass, Co: 1 to 20% by mass, and one or more of Sb, Cu, Fe, and Ni in total. A brazing material for a Ni-plated substrate, comprising 01 to 5% by mass, the balance being Sn and inevitable impurities.
本発明に係るろう材の第八態様は、Ｓｎ−Ａｇ系合金中に平均粒径１〜４０μｍのＣｏ粉が分散しているか、または、Ｓｎ系合金中に平均粒径１〜４０μｍのＡｇ−Ｃｏ合金粉が分散しているろう材であって、Ａｇ：２〜５質量％と、Ｃｏ：１〜２０質量％と、Ｐ：０．００１〜０．５質量％と、Ｓｂ、Ｃｕ、ＦｅおよびＮｉのうちの１種以上を合計で０．０１〜５質量％とを含み、残部がＳｎおよび不可避不純物であることを特徴とするＮｉめっき基板用ろう材である。 In an eighth aspect of the brazing filler metal according to the present invention, Co powder having an average particle diameter of 1 to 40 μm is dispersed in the Sn—Ag alloy, or Ag— having an average particle diameter of 1 to 40 μm in the Sn alloy. A brazing material in which Co alloy powder is dispersed, Ag: 2 to 5% by mass, Co: 1 to 20% by mass, P: 0.001 to 0.5% by mass, Sb, Cu, Fe And a brazing material for a Ni-plated substrate, comprising one or more of Ni and 0.01 to 5% by mass in total, the balance being Sn and inevitable impurities.
本発明に係る半導体装置の製造方法は、本発明の第一態様から第八態様に係るいずれかのろう材を用いて、Ｎｉめっきがされた支持部材に半導体素子をダイボンディングし、半導体装置を組み立てることを特徴とする。 A method for manufacturing a semiconductor device according to the present invention includes die-bonding a semiconductor element to a support member plated with Ni using any one of the brazing materials according to the first to eighth aspects of the present invention, It is characterized by assembling.
前記Ｎｉめっきの上に、さらに金めっきがなされていることが好ましい。 It is preferable that gold plating is further performed on the Ni plating.
本発明に係る半導体装置の第一態様は、本発明の第一態様から第八態様に係るいずれかのろう材を用いて、組み立てられたことを特徴とする。 The first aspect of the semiconductor device according to the present invention is characterized by being assembled using any one of the brazing materials according to the first to eighth aspects of the present invention.
本発明に係る半導体装置の第二態様は、本発明に係る半導体装置の製造方法を用いて製造されたことを特徴とする。 A second aspect of the semiconductor device according to the present invention is manufactured using the method for manufacturing a semiconductor device according to the present invention.
本発明に係るろう材は、半導体素子等の電子素子をＮｉめっきがされたリードフレーム等の支持部材にダイボンディングする際の濡れ性が良好であり、かつ、組み立てた半導体装置等の電子部品をプリント基板へ実装する温度あるいは電子部品の組み立てを行う際のステップろう付けを行う温度である２６０℃まで加熱しても、再溶融することがない。このため、本発明に係るろう材を用いれば、ダイボンディングする際に、ろう材部にボイドが発生しにくく、さらに、組み立てた半導体装置等の電子部品をプリント基板へ実装する際等に再加熱をしても、ろう材部にボイドが発生しにくい。よって、本発明に係るろう材を用いることで、ボイド発生に起因する半導体装置等の電子部品の性能劣化を防止できる。 The brazing material according to the present invention has good wettability when die-bonding an electronic element such as a semiconductor element to a support member such as a lead frame plated with Ni, and an electronic component such as an assembled semiconductor device is used. Even if it is heated to 260 ° C., which is the temperature for mounting on a printed circuit board, or the temperature for performing step brazing when assembling electronic components, it does not remelt. For this reason, if the brazing material according to the present invention is used, voids are unlikely to occur in the brazing material portion during die bonding, and reheating is performed when mounting an electronic component such as an assembled semiconductor device on a printed circuit board. Even if it does, a void is hard to generate | occur | produce in a brazing material part. Therefore, by using the brazing material according to the present invention, it is possible to prevent performance deterioration of electronic components such as a semiconductor device due to generation of voids.
また、本発明に係るろう材は、鉛を含んでおらず、また、高コストの成分も含んでおらず、さらに本発明に係るろう材を得るための工程においても高コストの工程は含んでいない。 Further, the brazing material according to the present invention does not contain lead, does not contain high-cost components, and further includes a high-cost process in the process for obtaining the brazing material according to the present invention. Not in.
したがって、本発明に係るろう材を用いることにより、環境に対する負荷を与えずに、安価に、信頼性の高い半導体装置等の電子部品を得ることができる。 Therefore, by using the brazing material according to the present invention, it is possible to obtain a highly reliable electronic component such as a semiconductor device at a low cost without giving an environmental load.
本発明者は、セラミックパッケージと気密封止用キャップとを接合するために、セラミックパッケージにＮｉ−Ｃｏ合金めっきを施し、さらにＳｎ／Ａｇはんだを用いて接合することで、Ｎｉ、ＣｏをＳｎと化合物化させ、接合部を高融点化し、接合部の再溶融を回避する技術（非特許文献１参照）を、ダイボンディングにおける接合に応用できるのではないかと考え、鋭意研究を行った。その結果、Ｎｉメッキ基板を用いることにより、ダイボンディング後の接合部を高融点化できるろう材を見出した。 In order to join the ceramic package and the hermetic sealing cap, the present inventor performs Ni-Co alloy plating on the ceramic package, and further joins it using Sn / Ag solder so that Ni and Co are Sn and Sn. The inventors conducted intensive research on the idea that a technique (see Non-Patent Document 1) that can be compounded to increase the melting point of the bonded portion and avoid remelting of the bonded portion can be applied to bonding in die bonding. As a result, the present inventors have found a brazing material that can increase the melting point of a bonded portion after die bonding by using a Ni-plated substrate.
また、非特許文献１では、Ｎｉ−Ｃｏ合金めっき表面にＡｕめっきを施すことで、Ｎｉ、Ｃｏ、ＡｕとＳｎとの化合物化が促進されることも開示されているが、本発明者は、ろう材にＰを添加することでＡｕめっきを施さなくてもＮｉめっきの構成成分のろう材中への溶解が促進され、短時間で接合部が高融点化することも見出した。 Further, in Non-Patent Document 1, it is also disclosed that compounding of Ni, Co, Au and Sn is promoted by applying Au plating to the Ni—Co alloy plating surface. It has also been found that by adding P to the brazing material, dissolution of the constituent components of the Ni plating into the brazing material is promoted without applying Au plating, and the joint has a high melting point in a short time.
本発明は、かかる知見に基づきなされたものである。以下、本発明について説明する。 The present invention has been made based on such findings. The present invention will be described below.
本発明に係るろう材は、Ａｇ：２〜５質量％と、Ｃｏ：１〜２０質量％とを含み、残部がＳｎおよび不可避不純物からなる。さらに、ＡｇおよびＣｏに加えて、Ｓｂ、Ｃｕ、ＦｅおよびＮｉのうちの１種以上および／またはＰを含んでいることが好ましい。 The brazing filler metal according to the present invention contains Ag: 2 to 5% by mass and Co: 1 to 20% by mass, with the balance being Sn and inevitable impurities. Furthermore, in addition to Ag and Co, it is preferable to include one or more of Sb, Cu, Fe and Ni and / or P.
Ａｇは、濡れ性をよくするために添加する。Ａｇを２〜５質量％添加する理由は、２％未満では濡れ性向上の効果が不十分であるためであり、５％を超えるとろう材のコストが高くなるためである。 Ag is added to improve wettability. The reason for adding 2 to 5% by mass of Ag is that if it is less than 2%, the effect of improving wettability is insufficient, and if it exceeds 5%, the cost of the brazing material increases.
Ｃｏは、Ｎｉめっき中のＮｉ原子がろう材中へ溶解しやすくするために添加する。Ｃｏを１〜２０質量％添加する理由は、１％未満ではＮｉめっき中のＮｉ原子がろう材中へ溶解するのに時間がかかるためであり、２０％を超えると濡れ性が悪くなるためである。 Co is added to facilitate dissolution of Ni atoms in the Ni plating into the brazing material. The reason for adding 1 to 20% by mass of Co is that if it is less than 1%, it takes time for Ni atoms in the Ni plating to dissolve in the brazing material, and if it exceeds 20%, the wettability becomes worse. is there.
Ｐは、濡れ性を向上させる働き、および、Ａｕめっきを施さなくてもＮｉめっき中のＮｉ原子のろう材中への溶解を促進し、短時間で接合部を高融点化する働きを有する。そのため、Ｐを０．００１〜０．５質量％添加することが好ましい。Ｐの添加量が０．００１質量％未満では前記働きの発現が不十分となるためであり、０．５質量％を超える量を添加しても、前記働きの発現はそれ以上向上せず、コストがかかるためである。 P has a function of improving wettability and a function of accelerating the dissolution of Ni atoms in the Ni plating into the brazing material without performing Au plating and increasing the melting point of the joint in a short time. Therefore, it is preferable to add 0.001 to 0.5 mass% of P. If the amount of P added is less than 0.001% by mass, the expression of the function becomes insufficient. Even if the amount exceeds 0.5% by mass, the expression of the function is not further improved. This is because of the cost.
Ｓｂ、Ｃｕ、ＦｅおよびＮｉは、はんだ中に化合物を析出させることにより接合部を高融点化する働きがあるので、Ｓｂ、Ｃｕ、ＦｅおよびＮｉのうちの１種以上を合計で０．０１〜５質量％添加することが好ましい。０．０１質量％未満では接合部を高融点化する効果が不十分であるためであり、５％を超えるとろう材の加工性が悪化し、コストがかかるためである。また、濡れ性も悪くなるからである。 Since Sb, Cu, Fe and Ni have a function of increasing the melting point of the joint by precipitating a compound in the solder, one or more of Sb, Cu, Fe and Ni are added in a total amount of 0.01 to It is preferable to add 5% by mass. If the amount is less than 0.01% by mass, the effect of increasing the melting point of the joint is insufficient, and if it exceeds 5%, the workability of the brazing material deteriorates and costs increase. Further, the wettability is also deteriorated.
Ｓｎ−Ａｇ合金中に平均粒径１〜４０μｍのＣｏ粉を分散させるか、Ｓｎ中に平均粒径１〜４０μｍのＡｇ−Ｃｏ合金粉を分散させることは、同一組成のＳｎ−Ａｇ−Ｃｏ合金よりも加工性をよくする効果があるので、好ましい。 Dispersing Co powder having an average particle diameter of 1 to 40 μm in the Sn—Ag alloy or dispersing Ag—Co alloy powder having an average particle diameter of 1 to 40 μm in the Sn is an Sn—Ag—Co alloy having the same composition. This is preferable because it has an effect of improving workability.
なお、本発明に係るろう材において、Ｐの有無、ならびにＳｂ、Ｃｕ、ＦｅおよびＮｉの有無にかかわらず、半導体装置の製造に適用する際に、従来の工程や条件を、何ら変更することなく、用いることができる。 In the brazing material according to the present invention, when applied to the manufacture of a semiconductor device regardless of the presence or absence of P and the presence or absence of Sb, Cu, Fe and Ni, conventional processes and conditions are not changed. Can be used.
また、本発明に係る半導体装置は、本発明に係るろう材を用いて組み立てられているので、ダイボンディング時に濡れ性不良によるボイドが生じず、かつ、プリント基板への実装温度である２６０℃まで加熱しても、ろう材の再溶融によるボイドも生じないため、これを用いて製造された半導体装置は、高い長期信頼性を有する。 Further, since the semiconductor device according to the present invention is assembled using the brazing material according to the present invention, voids due to poor wettability do not occur during die bonding, and the mounting temperature on the printed circuit board is up to 260 ° C. Even when heated, voids due to remelting of the brazing material do not occur, so that a semiconductor device manufactured using this has high long-term reliability.
ニッケルめっきを施したリードフレーム等の支持部材に、本発明に係るろう材を用いてダイボンディングすれば、Ｎｉ、Ｃｏ、Ｓｎからなる化合物が生成し、接合部を高融点化することができる。 If die-bonding is performed on a support member such as a lead frame subjected to nickel plating using the brazing material according to the present invention, a compound composed of Ni, Co, and Sn is generated, and the melting point of the joint can be increased.
前記ニッケルめっきの上にさらにＡｕめっきを施したリードフレーム等の支持部材に、本発明に係るろう材を用いてダイボンディングすれば、Ｎｉ、Ｃｏ、Ｓｎからなる化合物の成長が促進され、短時間で接合部を高融点化できる。このため、プリント基板への実装温度である２６０℃まで加熱しても、ろう材の再溶融をより確実に防止することができる。 If die-bonding using the brazing material according to the present invention is performed on a support member such as a lead frame that is further plated with Au on the nickel plating, the growth of the compound composed of Ni, Co, and Sn is promoted, and the time is short. This can increase the melting point of the joint. For this reason, even if it heats to 260 degreeC which is the mounting temperature to a printed circuit board, remelting of a brazing material can be prevented more reliably.
（実施例１〜４５、比較例１〜４）
純度９９．９％のＳｎ、純度９９．９％のＡｇ、純度９９．９％のＣｏ、純度９９．９％のＰを用いて、表１に示す組成のＳｎ合金を、大気溶解炉により８００℃に加熱して溶製し、押し出し速度１０ｍ／ｈで、１ｍｍφに押し出し加工を行い、ワイヤー形状のろう材を製造した。
(Examples 1-45, Comparative Examples 1-4)
Sn alloy of the composition shown in Table 1 using Sn having a purity of 99.9%, Ag having a purity of 99.9%, Co having a purity of 99.9%, and P having a purity of 99.9% was heated by an atmospheric melting furnace. It was heated to 0 ° C. and melted, and extruded to 1 mmφ at an extrusion speed of 10 m / h to produce a wire-shaped brazing material.
得られたろう材の濡れ性を評価するため、得られたろう材を、窒素雰囲気中で３３０℃に加熱されたＮｉめっき銅板に押し付けて溶解させた後、窒素雰囲気中で冷却した。そして、Ｎｉめっき銅板に対しはんだがはじかれない場合に濡れ性が良であると判断し、Ｎｉめっき銅板に対しはんだがはじかれず、かつ、はんだが溶解後にＮｉめっき銅板面を濡れ広がった場合に濡れ性が優であると判断し、Ｎｉめっき銅板に対してはんだがはじかれることがあった場合に濡れ性が不良であると判断した。表１に評価の結果を示す。 In order to evaluate the wettability of the obtained brazing material, the obtained brazing material was pressed against a Ni-plated copper plate heated to 330 ° C. in a nitrogen atmosphere, and then cooled in a nitrogen atmosphere. And when it is judged that the wettability is good when the solder is not repelled against the Ni-plated copper plate, the solder is not repelled against the Ni-plated copper plate, and the surface of the Ni-plated copper plate is wet spread after the solder is dissolved It was judged that the wettability was excellent, and it was judged that the wettability was poor when the solder was repelled against the Ni-plated copper plate. Table 1 shows the evaluation results.
次に、２６０℃に加熱した場合にダイボンディングされた接合部が再溶融するか否かの評価を行った。具体的には、次のようにして評価を行った。得られたろう材と、ダイボンダー（Ｄａｇｅ社製、型式ＥＢＤ−２００）とを用いて、シリコンのダイボンディング面にＡｕを蒸着して作製したダミーチップを、Ｎｉめっきがなされた銅製のリードフレームにダイボンディングした。 Next, it was evaluated whether or not the die-bonded joint was remelted when heated to 260 ° C. Specifically, the evaluation was performed as follows. Using the obtained brazing material and a die bonder (model EBD-200, manufactured by Dage), a dummy chip prepared by vapor-depositing Au on the die bonding surface of silicon was formed on a copper lead frame plated with Ni. Bonded.
さらに、エポキシ樹脂でモールドした。次いで、実装基板に、加熱温度２６０℃、加熱時間１０秒の条件で実装した。実装前後にＸ線透過装置を用いて接合部のボイドを観察し、実装後にボイドが発生した場合に再溶融したと判断した。表１に評価の結果を示す。 Further, it was molded with an epoxy resin. Next, it was mounted on a mounting substrate under the conditions of a heating temperature of 260 ° C. and a heating time of 10 seconds. Before and after mounting, voids in the joint were observed using an X-ray transmission device, and it was determined that re-melting occurred when voids occurred after mounting. Table 1 shows the evaluation results.
本発明の範囲内の実施例１〜４６のいずれも良好な濡れ性（濡れ性の評価は「良」または「優」）を示し、特に、Ｐを０．００１〜０．５質量％含む実施例１０〜４５は優れた濡れ性（濡れ性の評価は「優」）を示した。また、本発明の範囲内の実施例１〜４６のいずれにおいても接合部であるろう材部にボイドは確認できず、ろう材部は再溶融していなかった。実施例４６は、Ａｇ、Ｃｏ、Ｐを含み、残部がＳｎからなっており、本発明の第二態様と同様の元素からなるが、Ｐの含有量が０．０００８質量％であり、本発明の第二態様のＰの含有量の下限値である０．００１質量％を下回っているため、実施例１０〜４５よりは濡れ性が悪くなり、「良」であった。 Examples 1 to 46 within the scope of the present invention all exhibit good wettability (evaluation of wettability is “good” or “excellent”), and in particular includes P in an amount of 0.001 to 0.5% by mass. Examples 10 to 45 showed excellent wettability (wetability was evaluated as “excellent”). Moreover, in any of Examples 1 to 46 within the scope of the present invention, no void was found in the brazing filler metal part that was a joint, and the brazing filler metal part was not remelted. Example 46 contains Ag, Co, and P, and the balance is made of Sn. The example 46 is made of the same element as in the second embodiment of the present invention, but the P content is 0.0008% by mass. Since the lower limit of 0.001% by mass of the content of P in the second aspect of the present invention was below, the wettability was worse than in Examples 10 to 45 and was “good”.
これに対して、比較例１は、Ａｇ、Ｃｏ、Ｐを含み、残部がＳｎからなっており、本発明の第二態様と同様の元素からなるが、Ａｇの含有量が１．５質量％であり、本発明の第二態様のＡｇの含有量の下限値である２質量％を下回っているため、濡れ性が不良であった。比較例２は、Ａｇ、Ｃｏ、Ｐを含み、残部がＳｎからなっており、本発明の第二態様と同様の元素からなるが、Ｃｏの含有量が０．５質量％であり、本発明の第二態様のＣｏの含有量の下限値である１質量％を下回っているため、２６０℃に加熱後にろう材部を調べたところ、ボイドが発生していた。比較例３は、Ａｇ、Ｃｏ、Ｐを含み、残部がＳｎからなっており、本発明の第二態様と同様の元素からなるが、Ｃｏの含有量が２５質量％であり、本発明の第二態様のＣｏの含有量の上限値である２０質量％を上回っているため、濡れ性が不良であった。 On the other hand, Comparative Example 1 contains Ag, Co, and P, and the balance is made of Sn, and is made of the same element as in the second embodiment of the present invention, but the Ag content is 1.5% by mass. Since the content is below 2% by mass, which is the lower limit of the Ag content in the second aspect of the present invention, the wettability was poor. Comparative Example 2 contains Ag, Co, and P, and the balance is made of Sn. The comparative example 2 is made of the same element as in the second embodiment of the present invention, but the content of Co is 0.5% by mass. Since the content of the Co content in the second embodiment of the second embodiment was below 1% by mass, which was lower than the lower limit, the brazing filler metal part was examined after heating to 260 ° C., and voids were generated. Comparative Example 3 contains Ag, Co, and P, and the balance is made of Sn. The comparative example 3 is made of the same element as in the second embodiment of the present invention, but the Co content is 25% by mass. Since it exceeded 20 mass% which is the upper limit of content of Co of two aspects, wettability was unsatisfactory.
（実施例４７〜６１、比較例４）
表２に示す組成のＳｎ合金を用いた以外は、実施例１と同様にして、製造および評価を行った。表２に評価の結果を示す。
(Examples 47 to 61, Comparative Example 4)
Manufacture and evaluation were performed in the same manner as in Example 1 except that the Sn alloy having the composition shown in Table 2 was used. Table 2 shows the results of the evaluation.
本発明の第四態様の範囲内の実施例４７〜６１は、いずれも優れた濡れ性（濡れ性の評価は「優」）を示した。また、本発明の範囲内の実施例４７〜６１のいずれにおいても接合部であるろう材部にボイドは確認できず、ろう材部は再溶融していなかった。 Examples 47 to 61 within the scope of the fourth aspect of the present invention all showed excellent wettability (evaluation of wettability was “excellent”). Moreover, in any of Examples 47 to 61 within the scope of the present invention, no voids could be confirmed in the brazing filler metal part, which was a joint, and the brazing filler metal part was not remelted.
一方、比較例４は、Ａｇ、Ｃｏ、Ｐ、Ｓｂ、Ｃｕ、Ｆｅ、Ｎｉを含み、残部がＳｎからなっており、本発明の第四態様と同様の元素からなるが、Ｓｂ、Ｃｕ、ＦｅおよびＮｉの合計の含有量が８質量％であり、本発明の第四態様のＳｂ、Ｃｕ、ＦｅおよびＮｉの合計の含有量の上限値である５質量％を超えているため、濡れ性が不良であった。 On the other hand, Comparative Example 4 contains Ag, Co, P, Sb, Cu, Fe, Ni, and the balance is made of Sn, and is made of the same elements as in the fourth aspect of the present invention, but Sb, Cu, Fe Since the total content of Ni and Ni is 8% by mass and exceeds the upper limit of 5% by mass of the total content of Sb, Cu, Fe and Ni in the fourth aspect of the present invention, the wettability is It was bad.
（実施例６２）
Ａｇ：３．５質量％、Ｃｏ：１０質量％、残部がＳｎおよび不可避不純物の組成となるように、大気溶解炉で溶融させたＳｎ−Ａｇ合金中に平均粒子径１〜４０μｍのＣｏ粉を混ぜ合わせた。そして、押し出し加工で１ｍｍφのワイヤー形状に加工し、Ｃｏ粉入りＳｎ−Ａｇ合金からなるろう材を得た。本実施例における押し出し速度は１５ｍ／ｈであり、同じ組成の実施例５における押し出し速度１０ｍ／ｈの約１．５倍であった。
(Example 62)
Ag: 3.5% by mass, Co: 10% by mass, Co powder having an average particle size of 1 to 40 μm is mixed in an Sn-Ag alloy melted in an atmospheric melting furnace so that the balance is Sn and inevitable impurities. Mixed. And it processed into the wire shape of 1 mmphi by extrusion process, and obtained the brazing material which consists of Sn powder | flour alloy containing Co powder. The extrusion speed in this example was 15 m / h, which was about 1.5 times the extrusion speed of 10 m / h in Example 5 having the same composition.
得られたろう材について、実施例１と同様にして評価を行ったところ、組成が同じである実施例５と同様の結果となった。 When the obtained brazing material was evaluated in the same manner as in Example 1, the same results as in Example 5 having the same composition were obtained.
（実施例６３）
Ａｇ：３．５質量％、Ｃｏ：１０質量％、残部がＳｎおよび不可避不純物の組成となるように、大気溶解炉で溶融させた純度９９％のＳｎ中に平均粒子径１〜４０μｍのＡｇ−Ｃｏ合金粉を混ぜ合わせた。そして、押し出し加工で１ｍｍφのワイヤー形状に加工し、Ａｇ−Ｃｏ合金粉入りＳｎ合金からなるろう材を得た。本実施例における押し出し速度は１５ｍ／ｈであり、同じ組成の実施例５における押し出し速度１０ｍ／ｈの約１．５倍であった。
(Example 63)
Ag: 3.5% by mass, Co: 10% by mass, Ag—with an average particle size of 1 to 40 μm in Sn having a purity of 99% melted in an atmospheric melting furnace so that the balance is Sn and inevitable impurities. Co alloy powder was mixed. And it processed into the wire shape of 1 mmphi by extrusion, and obtained the brazing material which consists of Sn alloy containing Ag-Co alloy powder. The extrusion speed in this example was 15 m / h, which was about 1.5 times the extrusion speed of 10 m / h in Example 5 having the same composition.
得られたろう材について、実施例１と同様にして評価を行ったところ、組成が同じである実施例５と同様の結果となった。 When the obtained brazing material was evaluated in the same manner as in Example 1, the same results as in Example 5 having the same composition were obtained.
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| JP2012125783A (en) * | 2010-12-14 | 2012-07-05 | Nihon Superior Co Ltd | Lead-free solder alloy |
| CN102744534A (en) * | 2012-07-27 | 2012-10-24 | 张国华 | Preparation method of silver-free solder and product |
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| JP2012125783A (en) * | 2010-12-14 | 2012-07-05 | Nihon Superior Co Ltd | Lead-free solder alloy |
| CN102744534A (en) * | 2012-07-27 | 2012-10-24 | 张国华 | Preparation method of silver-free solder and product |
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