JP2006140477A - シリコン薄膜の製造方法 - Google Patents
シリコン薄膜の製造方法 Download PDFInfo
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- JP2006140477A JP2006140477A JP2005323464A JP2005323464A JP2006140477A JP 2006140477 A JP2006140477 A JP 2006140477A JP 2005323464 A JP2005323464 A JP 2005323464A JP 2005323464 A JP2005323464 A JP 2005323464A JP 2006140477 A JP2006140477 A JP 2006140477A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 121
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 120
- 239000010703 silicon Substances 0.000 title claims abstract description 120
- 239000010409 thin film Substances 0.000 title claims abstract description 113
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 238000007737 ion beam deposition Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000009616 inductively coupled plasma Methods 0.000 claims description 11
- 238000010884 ion-beam technique Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 abstract description 13
- 238000000034 method Methods 0.000 description 12
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000007796 conventional method Methods 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000560 X-ray reflectometry Methods 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000003852 thin film production method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】本発明のシリコン薄膜の製造方法は、基板1をチャンバ10内に配置するステップと、イオンビーム蒸着を250℃以下の温度条件で行うことによって前記基板1上にシリコン薄膜を形成するステップと、を含むことを特徴とする。前記イオンビーム蒸着が行われるチャンバ10の基本気圧を10−12Torr以上10−7Torr以下に調節するのがよい。
【選択図】図2
Description
一般的に、脱水素工程は約400℃で行われるため、プラスチックのような熱に弱い基板を熱的に変形または損傷させるおそれがある。結論的に、PECVD法によってもやはりプラスチック基板にシリコン薄膜を形成し難い。
図1は、本発明に係るシリコン薄膜の製造方法によって製造されたシリコン薄膜を示す概略的断面図である。
なお、本発明に係るシリコン薄膜の製造方法においては、基板として、プラスチック基板を用いることができる。
図1に示すように、シリコンウェーハまたはプラスチック基板(以下、単に「基板」という)1上にSiO2バッファ層(以下、単に「バッファ層」という)2が形成され、その上に本発明のシリコン薄膜の製造方法によって形成される非晶質シリコン(a−Si)薄膜(以下、単に「シリコン薄膜」という)3が形成されている。
シリコン薄膜3は、常温(望ましくは、約0℃以上約250℃以下)で行われるイオンビーム蒸着(IBD)装置により形成される。
図2に示すように、チャンバ10の一側に基板装着部11が設けられている。基板装着部11は、任意回転軸Xを中心に回転する。チャンバ10には、二つの高周波誘導結合プラズマソース(Radio Frequency Inductively Coupled Plasma Source;RFICP)が設けられている。一つは、メインRFICPソース21であり、他の一つは、補助RFICPソース22である。そのうち、補助RFICPソース22は、基板装着部11に搭載された基板1に対して所定角度傾いてイオンビームを照射するように配置されている。メインRFICPソース21と基板装着部11との間にはターゲット組立体30が設けられている。ターゲット組立体30は、複数のターゲット31を備え、ターゲット31を選択的に使用するために任意軸Yを中心に回転する構造となっている。
具体的には、本発明のシリコン薄膜の製造方法は、基板1をチャンバ10内に配置するステップと、イオンビーム蒸着を250℃以下の温度条件で行うことによって基板1上にシリコン薄膜3を形成するステップと、を含むものである。
図4に示すように、クリスタルシリコン(x−Si)は波長別反射率の変化が激しい一方、本発明のシリコン薄膜の製造方法によるシリコン薄膜3及びLPCVD法によるシリコン薄膜は、一部区間を除いては直線的反射率変化を示す。
そして、RBSで測定した結果、本発明のシリコン薄膜の製造方法によるシリコン薄膜3は、約0.2%のArを含有する一方、従来の方法によるシリコン薄膜は、2.4%のArを含有していることが分かった。Feは、本発明のシリコン薄膜の製造方法によるシリコン薄膜3のみ0.005%を含有することが分かった。
前記のような特徴を有する本発明のシリコン薄膜の製造方法により形成されたシリコン薄膜3は、ELA(Excimer Laser)などにより熱処理されて結晶化することができる。
2 SiO2バッファ層
3 非晶質シリコン(a−Si)薄膜
10 チャンバ
11 基板装着部
21 メインRFICPソース
21a フォーカスレンズ型グリッド
22 補助RFICPソース
22a グリッド
30 ターゲット組立体
31 ターゲット
Claims (5)
- 基板をチャンバ内に配置するステップと、
イオンビーム蒸着を250℃以下の温度条件で行うことによって前記基板上にシリコン薄膜を形成するステップと、
を含むことを特徴とするシリコン薄膜の製造方法。 - 前記イオンビーム蒸着が行われるチャンバの基本気圧を10-12Torr以上10-7Torr以下に調節することを特徴とする請求項1に記載のシリコン薄膜の製造方法。
- 前記イオンビーム蒸着を行う装置は、ターゲットに対応するメイン高周波誘導結合プラズマソースと、前記基板に対応する補助高周波誘導結合プラズマソースと、を備えることを特徴とする請求項1または2に記載のシリコン薄膜の製造方法。
- 前記メイン高周波誘導結合プラズマソース及び前記補助高周波誘導結合プラズマソースは、フィラメントのない構造であることを特徴とする請求項3に記載のシリコン薄膜の製造方法。
- 前記メイン高周波誘導結合プラズマソースは、イオンビームを前記ターゲットに集中させるためのフォーカスレンズ型グリッドを備えることを特徴とする請求項3に記載のシリコン薄膜の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040090495A KR100612868B1 (ko) | 2004-11-08 | 2004-11-08 | 실리콘 필름 제조방법 |
KR10-2004-0090495 | 2004-12-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006140477A true JP2006140477A (ja) | 2006-06-01 |
JP4939037B2 JP4939037B2 (ja) | 2012-05-23 |
Family
ID=36316870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005323464A Expired - Fee Related JP4939037B2 (ja) | 2004-11-08 | 2005-11-08 | シリコン薄膜の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7439197B2 (ja) |
JP (1) | JP4939037B2 (ja) |
KR (1) | KR100612868B1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7601430B2 (en) * | 2006-01-31 | 2009-10-13 | Los Alamos National Security, Llc | Biaxially oriented film on flexible polymeric substrate |
KR20080017965A (ko) * | 2006-08-23 | 2008-02-27 | 삼성전자주식회사 | 가요성 표시 장치용 표시판의 제조 방법 |
FR2971261B1 (fr) * | 2011-02-08 | 2013-09-20 | Centre Nat Rech Scient | Dispositif et procede de pulverisation ionique |
KR20160132819A (ko) * | 2014-03-18 | 2016-11-21 | 인텔 코포레이션 | 가요성 기판들을 갖는 반도체 어셈블리들 |
US20220316045A1 (en) * | 2021-03-31 | 2022-10-06 | Kla Corporation | System and method for ion-assisted deposition of optical coatings |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS624313A (ja) * | 1985-06-28 | 1987-01-10 | ザ スタンダ−ド オイル カンパニ− | 二重イオンビ−ム折出高密度フイルム |
JPH0252422A (ja) * | 1988-08-17 | 1990-02-22 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜製造方法及び装置 |
JPH02213467A (ja) * | 1989-02-15 | 1990-08-24 | Hitachi Ltd | 薄膜形成方法、及びその装置 |
JPH10317138A (ja) * | 1997-05-14 | 1998-12-02 | Japan Aviation Electron Ind Ltd | イオンビームスパッタリング装置 |
JPH11186165A (ja) * | 1997-12-25 | 1999-07-09 | Sony Corp | 多結晶薄膜の製造方法および半導体装置の製造方法 |
JP2001156001A (ja) * | 1999-11-25 | 2001-06-08 | Sony Corp | 半導体装置およびその製造方法 |
JP2002118064A (ja) * | 2000-10-10 | 2002-04-19 | National Institute Of Advanced Industrial & Technology | 半導体の低温化結晶成長法 |
JP2003013221A (ja) * | 2001-07-03 | 2003-01-15 | Shimadzu Corp | イオンビームスパッタ装置 |
JP2003138374A (ja) * | 2001-11-01 | 2003-05-14 | Hitachi High-Technologies Corp | スパッタ装置及びスパッタ方法 |
JP2003264148A (ja) * | 2002-03-07 | 2003-09-19 | Nec Corp | 薄膜製造方法、半導体デバイス製造方法、非晶質半導体薄膜、絶縁体薄膜、及び半導体装置 |
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US4179312A (en) * | 1977-12-08 | 1979-12-18 | International Business Machines Corporation | Formation of epitaxial layers doped with conductivity-determining impurities by ion deposition |
JPS57160909A (en) | 1981-03-27 | 1982-10-04 | Fujitsu Ltd | Formation of thin amorphous silicon hydride film |
US4376688A (en) * | 1981-04-03 | 1983-03-15 | Xerox Corporation | Method for producing semiconductor films |
US4492736A (en) * | 1983-09-29 | 1985-01-08 | Atlantic Richfield Company | Process for forming microcrystalline silicon material and product |
US4637869A (en) * | 1984-09-04 | 1987-01-20 | The Standard Oil Company | Dual ion beam deposition of amorphous semiconductor films |
US5192393A (en) * | 1989-05-24 | 1993-03-09 | Hitachi, Ltd. | Method for growing thin film by beam deposition and apparatus for practicing the same |
US5523587A (en) * | 1993-06-24 | 1996-06-04 | At&T Corp. | Method for low temperature growth of epitaxial silicon and devices produced thereby |
US5508368A (en) * | 1994-03-03 | 1996-04-16 | Diamonex, Incorporated | Ion beam process for deposition of highly abrasion-resistant coatings |
CA2147198A1 (en) * | 1995-04-18 | 1996-10-19 | Chettypalayam R. Selvakumar | Low temperature ion-beam assisted deposition method for realizing sige/si heterostructures |
JP4663139B2 (ja) * | 2001-02-16 | 2011-03-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2004
- 2004-11-08 KR KR1020040090495A patent/KR100612868B1/ko not_active IP Right Cessation
-
2005
- 2005-11-07 US US11/267,264 patent/US7439197B2/en not_active Expired - Fee Related
- 2005-11-08 JP JP2005323464A patent/JP4939037B2/ja not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS624313A (ja) * | 1985-06-28 | 1987-01-10 | ザ スタンダ−ド オイル カンパニ− | 二重イオンビ−ム折出高密度フイルム |
JPH0252422A (ja) * | 1988-08-17 | 1990-02-22 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜製造方法及び装置 |
JPH02213467A (ja) * | 1989-02-15 | 1990-08-24 | Hitachi Ltd | 薄膜形成方法、及びその装置 |
JPH10317138A (ja) * | 1997-05-14 | 1998-12-02 | Japan Aviation Electron Ind Ltd | イオンビームスパッタリング装置 |
JPH11186165A (ja) * | 1997-12-25 | 1999-07-09 | Sony Corp | 多結晶薄膜の製造方法および半導体装置の製造方法 |
JP2001156001A (ja) * | 1999-11-25 | 2001-06-08 | Sony Corp | 半導体装置およびその製造方法 |
JP2002118064A (ja) * | 2000-10-10 | 2002-04-19 | National Institute Of Advanced Industrial & Technology | 半導体の低温化結晶成長法 |
JP2003013221A (ja) * | 2001-07-03 | 2003-01-15 | Shimadzu Corp | イオンビームスパッタ装置 |
JP2003138374A (ja) * | 2001-11-01 | 2003-05-14 | Hitachi High-Technologies Corp | スパッタ装置及びスパッタ方法 |
JP2003264148A (ja) * | 2002-03-07 | 2003-09-19 | Nec Corp | 薄膜製造方法、半導体デバイス製造方法、非晶質半導体薄膜、絶縁体薄膜、及び半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20060041414A (ko) | 2006-05-12 |
US7439197B2 (en) | 2008-10-21 |
JP4939037B2 (ja) | 2012-05-23 |
KR100612868B1 (ko) | 2006-08-14 |
US20060099778A1 (en) | 2006-05-11 |
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