JP2006140445A - 複合材料ウェーハの製造方法 - Google Patents
複合材料ウェーハの製造方法 Download PDFInfo
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- JP2006140445A JP2006140445A JP2005270897A JP2005270897A JP2006140445A JP 2006140445 A JP2006140445 A JP 2006140445A JP 2005270897 A JP2005270897 A JP 2005270897A JP 2005270897 A JP2005270897 A JP 2005270897A JP 2006140445 A JP2006140445 A JP 2006140445A
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- 239000000463 material Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 235000012431 wafers Nutrition 0.000 title abstract description 42
- 150000001875 compounds Chemical class 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 claims abstract description 158
- 238000000034 method Methods 0.000 claims abstract description 59
- 230000005693 optoelectronics Effects 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims abstract description 3
- 239000002131 composite material Substances 0.000 claims description 26
- 230000001681 protective effect Effects 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 230000006872 improvement Effects 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 25
- 238000000926 separation method Methods 0.000 abstract description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 20
- 229910002601 GaN Inorganic materials 0.000 description 12
- 239000010408 film Substances 0.000 description 12
- 230000007704 transition Effects 0.000 description 11
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】初期ドナー基板1に所定分離領域4を形成する工程と、ハンドル基板2に初期ドナー基板1を取り付ける工程と、ハンドル基板2上へ初期ドナー基板1の層6を転移して複合材料ウェーハ10を形成するために所定分離領域4においてドナー基板1を取り外す工程を備える。取外し工程後に、初期ドナー基板1の厚さを少なくとも部分的に回復するためにドナー基板の残余部9上に層12を堆積し、初期ドナー基板1として堆積層12を有するドナー基板を再使用する。
【選択図】図1
Description
転位は成長中、あるレベルで途絶える傾向があり、そのため追加成長材料は、より低い転位密度を示す。このように、ドナー基板材料の品質は向上し、そのため転移層は市場で入手できる標準ドナー基板により達成される転移層と比較して、品質においてより良好である。
Claims (14)
- a)初期ドナー基板(1)を設ける工程と、
b)前記初期ドナー基板(1)に所定分離領域(4)を形成する工程と、
c)ハンドル基板(2)に前記初期ドナー基板(1)を取り付ける工程と、
d)前記初期ドナー基板(1)の層(6)を前記ハンドル基板(2)上に転移して複合材料ウェーハ(10)を形成するために、前記所定分離領域(4)において前記ドナー基板(1)を取り外す工程と、
を備える複合材料ウェーハの製造方法において、
e)前記初期ドナー基板(1)の厚さを少なくとも部分的に回復するために、前記取り外し工程後、前記ドナー基板の残余部(9)上に層(12)を堆積する工程と、
f)前記堆積層(12)を有する前記ドナー基板(1)を工程a)における前記初期ドナー基板(1)として再使用する工程と、
を備えることを特徴とする複合材料ウェーハの製造方法。 - 前記工程e)を実行する前に前記工程a)〜工程d)を少なくとも2回繰り返す工程において、
繰り返される工程a)において、前記取り外したドナー基板の残余部を初期ドナー基板(1)として再使用する請求項1に記載の方法。 - 前記工程a)〜工程d)は、前記初期ドナー基板(1)が所定最低厚さに達するまで繰り返される請求項2に記載の方法。
- 前記工程e)における前記層(12)は、ホモエピタキシャルに堆積される請求項1〜3のいずれか1項に記載の方法。
- 前記工程e)において、前記ホモエピタキシャル層(12)はMOCVD、HVPEまたはMBE方法を使用して設けられ、それにより、前記初期ドナー基板(1)における転位密度と比較して前記ホモエピタキシャル層(12)における転位密度の改善、特に1×107/cm2未満の転位密度、特に1×106/cm2未満を達成する請求項4に記載の方法。
- 前記工程e)は、ドナー基板の残余部(9)の、取外しが起きた表面(11)とは反対側の表面(15)上に前記層(12)を設ける工程を備える請求項1〜5のいずれか1項に記載の方法。
- 前記工程e)に先立ち、特に酸化物及び/または窒化物層を使用して取外しが起きた前記表面側(11)に保護膜(30)を設ける工程を備える請求項6に記載の方法。
- 前記層(12)を有する前記ドナー基板(1)を初期ドナー基板(1)として再使用することに先立ち、前記保護膜(30)を除去する工程を更に備える請求項7に記載の方法。
- 前記工程e)において、前記層を設ける前記ドナー基板の残余部(9)の表面側(11、15)を研磨及び/または洗浄する工程を更に備える請求項1〜8のいずれか1項に記載の方法。
- 前記ドナー基板(1)は、GaN、SiC、Ge、AlNまたはダイヤモンドのグループ一つである請求項1〜9のいずれか1項に記載の方法。
- 前記ハンドル基板(2)は、単結晶または多結晶材料であり、特にSi、GaAs、ZnO、SiC、AlNのグループの一つである請求項1〜10のいずれか1項に記載の方法。
- 前記ハンドル基板(2)は、ガラスまたはセラミック材料である請求項1〜10のいずれか1項に記載の方法。
- 前記工程c)に先立ち、前記ドナー基板(1)に取り付けられる前記ハンドル基板(2)の表面(7)上に絶縁層、特にSiO2またはSi3N4、または導体層を設ける工程を更に備える請求項1〜12のいずれか1項に記載の方法。
- 請求項1〜13のいずれか1項により製造された前記複合材料ウェーハの少なくとも一部を備える電子的、光電子的または光学的部品。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04292655A EP1667223B1 (en) | 2004-11-09 | 2004-11-09 | Method for manufacturing compound material wafers |
Publications (2)
Publication Number | Publication Date |
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JP2006140445A true JP2006140445A (ja) | 2006-06-01 |
JP4489671B2 JP4489671B2 (ja) | 2010-06-23 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005270897A Active JP4489671B2 (ja) | 2004-11-09 | 2005-09-16 | 複合材料ウェーハの製造方法 |
Country Status (9)
Country | Link |
---|---|
US (3) | US7531428B2 (ja) |
EP (2) | EP1962340A3 (ja) |
JP (1) | JP4489671B2 (ja) |
KR (1) | KR100746182B1 (ja) |
CN (2) | CN100426459C (ja) |
AT (1) | ATE420461T1 (ja) |
DE (1) | DE602004018951D1 (ja) |
SG (1) | SG122972A1 (ja) |
TW (2) | TWI367544B (ja) |
Cited By (17)
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JP2008205387A (ja) * | 2007-02-22 | 2008-09-04 | Tokyo Ohka Kogyo Co Ltd | サポートプレートの処理方法 |
KR20090093887A (ko) * | 2008-02-29 | 2009-09-02 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 단결정 박막을 갖는 기판의 제조 방법 |
JP2009231816A (ja) * | 2008-02-29 | 2009-10-08 | Shin Etsu Chem Co Ltd | 単結晶薄膜を有する基板の製造方法 |
WO2010082396A1 (ja) * | 2009-01-16 | 2010-07-22 | 住友電気工業株式会社 | 発光素子用基板 |
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Also Published As
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KR20060052446A (ko) | 2006-05-19 |
US7851330B2 (en) | 2010-12-14 |
CN101221895B (zh) | 2014-04-23 |
EP1962340A2 (en) | 2008-08-27 |
EP1667223B1 (en) | 2009-01-07 |
SG122972A1 (en) | 2006-06-29 |
KR100746182B1 (ko) | 2007-08-03 |
TW200824037A (en) | 2008-06-01 |
CN101221895A (zh) | 2008-07-16 |
US7968909B2 (en) | 2011-06-28 |
CN1790620A (zh) | 2006-06-21 |
TW200616014A (en) | 2006-05-16 |
ATE420461T1 (de) | 2009-01-15 |
US20090191719A1 (en) | 2009-07-30 |
US20060099776A1 (en) | 2006-05-11 |
US7531428B2 (en) | 2009-05-12 |
EP1962340A3 (en) | 2009-12-23 |
CN100426459C (zh) | 2008-10-15 |
US20110049528A1 (en) | 2011-03-03 |
DE602004018951D1 (de) | 2009-02-26 |
EP1667223A1 (en) | 2006-06-07 |
TWI367544B (en) | 2012-07-01 |
TWI303842B (en) | 2008-12-01 |
JP4489671B2 (ja) | 2010-06-23 |
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