JP2006128710A - パッケージ統合された薄膜led - Google Patents
パッケージ統合された薄膜led Download PDFInfo
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- JP2006128710A JP2006128710A JP2005342796A JP2005342796A JP2006128710A JP 2006128710 A JP2006128710 A JP 2006128710A JP 2005342796 A JP2005342796 A JP 2005342796A JP 2005342796 A JP2005342796 A JP 2005342796A JP 2006128710 A JP2006128710 A JP 2006128710A
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- Led Devices (AREA)
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Abstract
【解決手段】LEDエピタキシャル層(n−型、p−型、及び活性層)が基板上に成長する。各ダイについて、LED層がパッケージ基板と成長基板との間に挟まれるように、n層及びp層はLEDの境界を越えて延びるパッケージ基板と電気的に結合される。パッケージ基板は、電気的コンタクト及びハンダ付け可能なパッケージ接続を導く導電体を備える。成長基板が除去される。繊細なLED層は成長基板に取り付けられると共にパッケージ基板に結合されるので、LED層用の中間支持基板は不要である。次に、除去された成長基板に近接していた比較的厚いLEDエピタキシャル層は薄化されてその最上面が処理されて、光取り出し構造部が組み込まれる。
【選択図】図1
Description
12 パッケージ基板
14 サファイア成長基板
16 n−型層
18 活性層
20 p−型層
22 金属コンタクトパッド
24 金属
26 電極
Claims (46)
- LED部分から除去された成長基板上に形成された第1導電型の第1エピタキシャル層と、前記成長基板上に形成された第2導電型の第2エピタキシャル層と、前記第1及び第2エピタキシャル層の間に配置された活性層と、前記第1エピタキシャル層の第1の側にあり、前記活性層に実質的に平行な一次発光面とを含む発光ダイオード(LED)部分と、
前記LED部分がマウントされたパッケージ基板と、
前記パッケージ基板と前記第2エピタキシャル層との間に配置され、中間に支持基板を挟むことなく前記パッケージ基板上の導電体を前記第2エピタキシャル層に電気的に接続する金属境界面と、
を備え、
前記一次発光面と前記パッケージ基板の一部分との間の最短距離が50ミクロンより大きくなく、前記パッケージ基板の横方向の範囲が前記LED部分の横方向の範囲を越えることを特徴とする発光デバイス。 - 前記第2エピタキシャル層の上に堆積された金属層を更に備え、前記金属境界面が前記金属層と前記パッケージ上の前記導電体との間のハンダ結合部を含むことを特徴とする請求項1に記載のデバイス。
- 前記第2エピタキシャル層の上に堆積された金属層を更に備え、前記金属境界面が前記パッケージ上の前記導電体への前記金属層の超音波溶接を含むことを特徴とする請求項1に記載のデバイス。
- 前記第2エピタキシャル層の上に堆積された金属層を更に備え、前記金属境界面が前記金属層の前記パッケージ上の前記導電体への熱圧着結合を含むことを特徴とする請求項1に記載のデバイス。
- 前記第2エピタキシャル層の上に堆積された金属層を更に備え、前記金属境界面が前記金属層の前記パッケージ上の前記導電体への相互拡散接合を含むことを特徴とする請求項1に記載のデバイス。
- 前記第1エピタキシャル層と前記パッケージ基板上のコンタクトパッドとの間に電気コネクタを更に備えることを特徴とする請求項1に記載のデバイス。
- 前記電気コネクタがワイヤーであることを特徴とする請求項6に記載のデバイス。
- 前記電気コネクタがワイヤーリボンであることを特徴とする請求項7に記載のデバイス。
- 前記電気コネクタが金属ブリッジであることを特徴とする請求項6に記載のデバイス。
- 前記LEDがフリップチップであり、前記電気コネクタが前記第1エピタキシャル層を前記パッケージ基板上のコンタクトパッドに結合する金属結合を含むことを特徴とする請求項6に記載のデバイス。
- 前記LEDがフリップチップであり、前記金属境界面がパターン状に形成されることを特徴とする請求項1に記載のデバイス。
- 前記一次発光面が光取り出し構造部を組み込むことを特徴とする請求項1に記載のデバイス。
- 前記LEDが窒化ガリウム又はリン化ガリウムベースの材料で形成されることを特徴とする請求項1に記載のデバイス。
- 前記パッケージ基板上に複数のLEDを更に備え、各LEDがその成長基板を除去され、且つ前記パッケージ基板以外に支持基板がないことを特徴とする請求項1に記載のデバイス。
- 前記パッケージ基板上に複数のLEDを更に備え、各LEDがその成長基板を除去され、且つ前記パッケージ基板以外に支持基板がなく、前記複数のLEDがアレイのグループで配置されていることを特徴とする請求項1に記載のデバイス。
- 前記第1エピタキシャル層が前記第1導電型の複数のエピタキシャル層を含み、前記第2エピタキシャル層が前記第2導電型の複数のエピタキシャル層を含むことを特徴とする請求項1に記載のデバイス。
- 前記LED部分の上に蛍光体を更に備えることを特徴とする請求項1に記載のデバイス。
- 前記LED部分の上に光学素子を更に備えることを特徴とする請求項1に記載のデバイス。
- 前記パッケージ基板が前記LED部分のヒートシンクとして機能するよう熱伝導性を有することを特徴とする請求項1に記載のデバイス。
- 前記LED層が3ミクロンより小さい厚さを有することを特徴とする請求項1に記載のデバイス。
- 前記LED層が10ミクロンより小さい厚さを有することを特徴とする請求項1に記載のデバイス。
- 前記LED部分及び前記パッケージ基板を囲むハウジングを更に備え、前記ハウジングが、該ハウジングから延びて前記パッケージ基板に電気的に接続された金属リードを含むことを特徴とする請求項1に記載のデバイス。
- 前記一次発光面が、内部に形成された光取り出し構造部を有することを特徴とする請求項1に記載のデバイス。
- 前記成長基板が除去されて前記LED部分が前記パッケージ基板上にマウントされた後に、前記第1エピタキシャル層が薄化されることを特徴とする請求項1に記載のデバイス。
- 第1導電型の第1エピタキシャル層と、成長基板上に形成された第2導電型の第2エピタキシャル層と、前記第1及び第2エピタキシャル層の間に配置された活性層とを含む発光ダイオード(LED)層を前記成長基板上に成長させる段階であって、前記第1エピタキシャル層の第1の側にある一次発光面が、実質的に前記活性層と平行であり、前記LED層が少なくとも1つの個別のLEDを形成していることを特徴とする段階と、
パッケージ基板を準備する段階であって、前記パッケージ基板の横方向の範囲が個々のLEDの横方向の範囲を越えており、前記パッケージ基板が、前記第1及び第2エピタキシャル層を電気的に接続するための1つ又はそれ以上の電気的コンタクトパッドを有する支持面を含み、前記コンタクトパッドがパッケージ端子に接続するための金属リードと電気的に接続されていることを特徴とする段階と、
前記成長基板に取り付けられた前記LED層を、前記第2エピタキシャル層が前記パッケージ基板上の第1コンタクトパッドに面するように前記パッケージ基板上に載置する段階と、
前記パッケージ基板と前記第2エピタキシャル層との間に配置された金属境界面を用いて、前記第2エピタキシャル層を前記第1コンタクトパッドに結合する段階であって、前記一次発光面と前記パッケージ基板の一部分との間の最短距離が50ミクロンより大きくないことを特徴とする段階と、
前記成長基板を除去する段階と、
前記成長基板が除去された後に更に前記LED層を処理する段階と、
を含む方法。 - 前記成長基板がサファイアであり、前記成長基板を除去する段階がレーザリフトオフプロセスを実施する段階を含む請求項25に記載の方法。
- 前記成長基板がシリコンを含み、前記成長基板を除去する段階がエッチングプロセスを実施する段階を含む請求項25に記載の方法。
- 前記LED層がAlInGaPを含み、前記成長基板がGaAs又はGeを含む請求項25に記載の方法。
- 前記LED部分及びパッケージ基板を囲むハウジング内にこれらをマウントし、前記ハウジングから前記パッケージ基板上のコンタクト領域へ延びる金属リードを電気的に接続する段階を更に含む請求項25に記載の方法。
- 前記LED層を載置する段階が、前記パッケージ基板上の複数のLEDを載置する段階を含む請求項25に記載の方法。
- 前記パッケージ基板を保護するために、前記パッケージ基板上に前記LED層が載置された後に前記パッケージ基板の上に保護層を堆積させる段階と、
前記第1エピタキシャル層の一部をエッチングする段階と、
を更に含む請求項25に記載の方法。 - 前記第1エピタキシャル層の一部をエッチングする段階が、前記第1エピタキシャル層の厚さの少なくとも50%をエッチングする段階を含む請求項31に記載の方法。
- 前記第1エピタキシャル層と前記パッケージ基板上のコンタクトパッドとの間に電気コネクタを準備する段階を更に含む請求項25に記載の方法。
- 前記電気コネクタがワイヤーであることを特徴とする請求項33に記載の方法。
- 前記電気コネクタが金属ブリッジであることを特徴とする請求項33に記載の方法。
- 前記LEDがフリップチップであり、前記電気コネクタを準備する段階が、前記第1エピタキシャル層を前記パッケージ基板上のコンタクトパッドに結合する段階を含む請求項33に記載の方法。
- 前記成長基板が除去された後に前記パッケージ基板をダイシングする段階を更に含み、各パッケージ基板のダイがそこにマウントされた1つ又はそれ以上のLEDを有することを特徴とする請求項25に記載の方法。
- LED層を成長させる段階が窒化ガリウムベースのLED層を成長させる段階を含む請求項25に記載の方法。
- 前記LED層を前記パッケージ基板に載置する前に、前記LED層及び成長基板をダイシングする段階を更に含む請求項25に記載の方法。
- 前記LED層を前記パッケージ基板上に載置する段階が、前記LED層及び前記成長基板をダイシングする前に前記LED層を前記パッケージ基板上に載置する段階を含み、前記成長基板を除去する段階が前記成長基板全体を完全な状態のまま除去する段階を含み、前記成長基板を除去した後に前記パッケージ基板をダイシングする段階を更に含む請求項25に記載の方法。
- 前記第1エピタキシャル層が前記第1導電型の複数のエピタキシャル層を含み、前記第2エピタキシャル層が前記第2導電型の複数のエピタキシャル層を含むことを特徴とする請求項25に記載の方法。
- 前記LED層が3ミクロンより大きくない厚さを有するように前記成長基板を除去した後に前記第1エピタキシャル層をエッチングする段階を更に含む請求項25に記載の方法。
- 前記LED層が10ミクロンより大きくない厚さを有するように、前記成長基板を除去した後に前記第1エピタキシャル層をエッチングする段階を更に含む請求項25に記載の方法。
- 前記LED層を更に処理する段階が、前記一次発光面内に光取り出し構造部を形成する段階を含む請求項25に記載の方法。
- 光取り出し構造部を形成する段階が、一次発光面を粗面化し、パターン化し、ディンプル加工し、或いはフォトニック結晶を形成する段階からなることを特徴とする請求項44に記載の方法。
- 前記LED層を更に処理する段階が、前記第1エピタキシャル層を薄化する段階を含む請求項25に記載の方法。
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TW200629605A (en) | 2006-08-16 |
US20060091409A1 (en) | 2006-05-04 |
JP4885521B2 (ja) | 2012-02-29 |
US20130313562A1 (en) | 2013-11-28 |
US7488621B2 (en) | 2009-02-10 |
US20100041170A1 (en) | 2010-02-18 |
US20060240585A1 (en) | 2006-10-26 |
EP1653523A3 (en) | 2009-02-11 |
US8455913B2 (en) | 2013-06-04 |
US7875533B2 (en) | 2011-01-25 |
US7256483B2 (en) | 2007-08-14 |
US20110084301A1 (en) | 2011-04-14 |
EP1653523A2 (en) | 2006-05-03 |
EP1653523B1 (en) | 2018-08-01 |
TWI413273B (zh) | 2013-10-21 |
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