JP2006108377A - カーボンナノチューブ構造体、半導体装置、および半導体パッケージ - Google Patents
カーボンナノチューブ構造体、半導体装置、および半導体パッケージ Download PDFInfo
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- JP2006108377A JP2006108377A JP2004292843A JP2004292843A JP2006108377A JP 2006108377 A JP2006108377 A JP 2006108377A JP 2004292843 A JP2004292843 A JP 2004292843A JP 2004292843 A JP2004292843 A JP 2004292843A JP 2006108377 A JP2006108377 A JP 2006108377A
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Abstract
【解決手段】 第1配線層21、層間絶縁膜22、第2配線層23が順次積層され、層間絶縁膜22を貫通するビアホール24に、第1配線層21と第2配線層23を電気的に接続するカーボンナノチューブ束25が形成されてなるビア26から構成する。カーボンナノチューブ束25は、第1配線層21の凹部28の側面および底面に形成された触媒層29から成長させ、側面から成長したカーボンナノチューブ25aによりカーボンナノチューブ束25の密度を向上する。
【選択図】 図3
Description
図3(A)は本発明の第1の実施の形態に係る半導体装置の要部断面図、図3(B)は(A)に示すA−A断面図である。である。
シリコン基板に下部電極となるCu膜を形成した後、Cu膜を覆うシリコン酸化膜を形成し、シリコン酸化膜に直径2μmの開口部を形成し、その開口部に連通する直径2μm、深さ350nmの凹部をCu膜に形成し、凹部表面に沿ってTa膜(厚さ5nm)、Ti膜(厚さ1nm)、Coからなる触媒層(厚さ2.5nm)をスパッタ法により形成した。次いで、熱CVD装置を用いて、アセチレンガス(流量20sccm)、およびアルゴンガス(流量180sccm)を供給し、圧力を1kPaに設定し、触媒層から長さ約2000nmのカーボンナノチューブ束を成長させた。次いで、スパッタ法によりカーボンナノチューブ束の先端にCu膜を形成して上部電極とし、二端子法により下部電極と上部電極との間のカーボンナノチューブ束の電気抵抗を測定した。
比較のため、Cu膜に凹部を形成せずにCu膜の表面に直径2μmのTa膜(厚さ5nm)、Ti膜(厚さ1nm)、Coからなる触媒層(厚さ2.5nm)をこの順に積層した以外は実施例と同様にしてカーボンナノチューブ束を形成し、カーボンナノチューブ束の電気抵抗を測定した。
図7(A)は、本発明の第2の実施の形態に係る半導体パッケージの要部断面図、図7(B)は(A)の拡大図である。
(付記1) 第1の導電体と、
前記第1の導電体を覆う絶縁膜と、
前記絶縁膜上に配設された第2の導電体と、
前記絶縁膜を貫通し第1の導電体の表面を露出する開口部に充填され、第1の導電体と第2の導電体とを電気的に接続するカーボンナノチューブとを備え、
前記カーボンナノチューブの一端は、前記第1の導電体の表面に設けられた凹部に固着されてなる半導体装置。
(付記2) 前記カーボンナノチューブは、前記凹部に沿って覆う触媒層から成長してなることを特徴とする付記1記載の半導体装置。
(付記3) 前記凹部は、第1の導電体の表面に直交する断面が、矩形、V字型、楕円形、台形、および逆台形からなる群のうちいずれか一つの形状からなることを特徴とする付記1または2記載の半導体装置。
(付記4) 前記凹部は、第1の導電体の表面に略直交する側面を有することを特徴とする付記1〜3のうち、いずれか一項記載の半導体装置。
(付記5) 前記凹部と触媒層との間に、該凹部の表面を覆うようにバリア膜およびTi膜をこの順に設けてなることを特徴とする付記2〜4のうち、いずれか一項記載の半導体装置。
(付記6) 前記触媒層は、連続膜および/または粒子状堆積物からなることを特徴とする付記2〜5のうち、いずれか一項記載の半導体装置。
(付記7) 前記触媒層は、Fe、Ni、Co、Mo、Pdおよびこれらの金属を含む合金から選択される金属材料、あるいはこの金属材料とPあるいはNを含む金属間化合物から選択されることを特徴とする付記2〜6のうち、いずれか一項記載の半導体装置。
(付記8) 前記凹部の開口部の一辺の長さと凹部の深さとのアスペクト比(一辺の長さ/深さ)が0.025〜10の範囲に設定されることを特徴とする付記1〜7のうち、いずれか一項記載の半導体装置。
(付記9) 前記触媒層の表面積Scatと前記開口部の第1の導電体の表面に平行な断面の面積Sviaとの比Scat/Sviaが0.05〜10の範囲に設定してなることをを特徴とする付記2〜8のうち、いずれか一項記載の半導体装置。
(付記10) 前記第1の導電体および第2の導電体は、Cu、Ti、W、Al、TiN、およびこれらを含む合金から選択される導電材料、あるいは、これらの導電材料の積層膜からなることを特徴とする付記1〜9のうち、いずれか一項記載の半導体装置。
(付記11) 前記第1の導電体は、半導体基板あるいはゲート電極の表面に形成されたシリサイド膜であることを特徴とする付記1〜9のうち、いずれか一項記載の半導体装置。
(付記12) 半導体装置と、
前記半導体装置に接続される回路基板と、
前記半導体装置の表面に配設された放熱部とを備える半導体パッケージであって、
前記放熱部は、熱伝導性基体と、該熱伝導性基体の表面に配設されたカーボンナノチューブと、該カーボンナノチューブの先端部を半導体装置に固着する接着層を有し、
前記カーボンナノチューブは、前記熱導電性基体の表面に設けられた凹部に沿って覆う触媒層に固着されてなる半導体パッケージ。
(付記13) 前記カーボンナノチューブは、前記触媒層から成長してなることを特徴とする付記12記載の半導体パッケージ。
(付記14) 前記接着層は、Au、Sn、およびこれらの合金からなる群のうちいずれか一種からなることを特徴とする付記12または13記載の半導体パッケージ。
(付記15) 基体と、
前記基体の表面の凹部に沿って覆う触媒層と、
前記触媒層の表面から成長したカーボンナノチューブとを備えるカーボンナノチューブ構造体。
(付記16) 前記カーボンナノチューブは、その先端部が互いに密接したカーボンナノチューブ束を形成してなることを特徴とする付記15記載のカーボンナノチューブ構造体。
(付記17) 第1の導電体と、
前記第1の導電体を覆う絶縁膜と、
前記絶縁膜上に配設された第2の導電体と、
前記絶縁膜を貫通し第1の導電体の表面を露出する開口部に充填され、第1の導電体と第2の導電体とを電気的に接続するカーボンナノチューブとを備える半導体装置の製造方法であって、
前記絶縁膜を貫通し、第1の導電体を露出する開口部を形成する工程と、
前記第1の導電体の表面に開口部に連通する凹部を形成する工程と、
前記凹部に沿って覆う触媒層を形成する工程と、
前記触媒層から開口部を充填するカーボンナノチューブを成長させる工程と、
前記絶縁膜の表面にカーボンナノチューブの先端部を覆うように第2の導電体を形成する工程とを含むことを特徴とする半導体装置の製造方法。
(付記18) 凹部を形成する工程は、イオンミリング法、RIE法、またはウェットエッチング法を用いることを特徴とする付記17記載の半導体装置の製造方法。
11 基板
12、28、30、32、34、36、55、56 凹部
13、29、50 触媒層
14、25、48、54 カーボンナノチューブ束
14a、14b、25a、54a カーボンナノチューブ
20、40 半導体装置
21 第1配線層
22 間絶縁膜
23 第2配線層
24 ビアホール
26 ビア
31a バリア層
31b Ti膜
38 レジスト膜
41 シリコン基板
42 素子分離領域
43 素子領域
44 ゲート積層体
44a ゲート酸化膜
44b ゲート電極
44c ゲート電極
45a シリコン窒化膜
45b 層間絶縁膜
46 ソース・ドレイン領域
48、52 シリサイド膜
49 配線
50、53 コンタクト
60 半導体パッケージ
61 支持基板
62 多層配線層
63、65 バンプ
64 半導体チップ
66 ヒートシンク
69 接着層
Claims (8)
- 第1の導電体と、
前記第1の導電体を覆う絶縁膜と、
前記絶縁膜上に配設された第2の導電体と、
前記絶縁膜を貫通し第1の導電体の表面を露出する開口部に充填され、第1の導電体と第2の導電体とを電気的に接続するカーボンナノチューブとを備え、
前記カーボンナノチューブの一端は、前記第1の導電体の表面に設けられた凹部に固着されてなる半導体装置。 - 前記凹部に沿って覆う触媒層をさらに備え、
前記カーボンナノチューブは、触媒層に固着してなることを特徴とする請求項1記載の半導体装置。 - 前記凹部は、第1の導電体の表面に直交する断面が、矩形、V字型、楕円形、台形、および逆台形からなる群のうちいずれか一つの形状からなることを特徴とする請求項1または2記載の半導体装置。
- 前記凹部は、第1の導電体の表面に略直交する側面を有することを特徴とする請求項1〜3のうち、いずれか一項記載の半導体装置。
- 前記第1の導電体および第2の導電体は、Cu、Ti、W、Al、TiN、およびこれらを含む合金から選択される導電材料、あるいは、これらの導電材料の積層膜からなることを特徴とする請求項1〜4のうち、いずれか一項記載の半導体装置。
- 前記第1の導電体は、半導体基板あるいはゲート電極の表面に形成されたシリサイド膜であることを特徴とする請求項1〜4のうち、いずれか一項記載の半導体装置。
- 半導体装置と、
前記半導体装置に接続される回路基板と、
前記半導体装置の表面に配設された放熱部とを備える半導体パッケージであって、
前記放熱部は、熱伝導性基体と、該熱伝導性基体の表面に配設されたカーボンナノチューブと、該カーボンナノチューブの先端部を半導体装置に固着する接着層を有し、
前記カーボンナノチューブは、前記熱導電性基体の表面に設けられた凹部に沿って覆う触媒層に固着されてなる半導体パッケージ。 - 基体と、
前記基体の表面の凹部に沿って覆う触媒層と、
前記触媒層の表面から成長したカーボンナノチューブとを備えるカーボンナノチューブ構造体。
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