JP2005524967A - メモリ効果を有するスイッチ素子 - Google Patents
メモリ効果を有するスイッチ素子 Download PDFInfo
- Publication number
- JP2005524967A JP2005524967A JP2002588649A JP2002588649A JP2005524967A JP 2005524967 A JP2005524967 A JP 2005524967A JP 2002588649 A JP2002588649 A JP 2002588649A JP 2002588649 A JP2002588649 A JP 2002588649A JP 2005524967 A JP2005524967 A JP 2005524967A
- Authority
- JP
- Japan
- Prior art keywords
- state
- switch
- switch element
- element according
- active region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003446 memory effect Effects 0.000 title description 2
- 230000005684 electric field Effects 0.000 claims abstract description 27
- 230000015654 memory Effects 0.000 claims description 51
- 150000002500 ions Chemical class 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 15
- 229910001415 sodium ion Inorganic materials 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 4
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 3
- 150000004032 porphyrins Chemical class 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 229910001417 caesium ion Inorganic materials 0.000 claims description 2
- 125000000623 heterocyclic group Chemical group 0.000 claims description 2
- 230000004044 response Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000002131 composite material Substances 0.000 description 16
- 239000000460 chlorine Substances 0.000 description 9
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 8
- 210000004027 cell Anatomy 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000011780 sodium chloride Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- 230000006386 memory function Effects 0.000 description 3
- 229920001197 polyacetylene Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- -1 polyvinylene Polymers 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 229920000547 conjugated polymer Polymers 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005442 molecular electronic Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- YMWLPMGFZYFLRP-UHFFFAOYSA-N 2-(4,5-dimethyl-1,3-diselenol-2-ylidene)-4,5-dimethyl-1,3-diselenole Chemical compound [Se]1C(C)=C(C)[Se]C1=C1[Se]C(C)=C(C)[Se]1 YMWLPMGFZYFLRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000003915 cell function Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/685—Hi-Lo semiconductor devices, e.g. memory devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/50—Bistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/701—Organic molecular electronic devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/13—Dissociation, i.e. using memory material including molecules which, during a write operation, are dissociated in ions which migrate further in the memory material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Molecular Biology (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (52)
- 第1及び第2電極と、
前記第1及び第2電極の間に設けられており、分子系を備える活性領域と、
前記活性領域に印加される電界を制御するための制御電極と、を備える
スイッチ素子。 - 前記活性領域は、前記分子系内に分布する複数のイオン錯体をさらに備える
請求項1記載のスイッチ素子。 - 前記活性領域は、オン状態とオフ状態とを選択的に取り得るように構成される
請求項2記載のスイッチ素子。 - 前記電界は、前記活性領域を前記オン状態と前記オフ状態とで切り替えるように制御される
請求項3記載のスイッチ素子。 - 前記活性領域は、前記制御電極と前記第1及び第2電極との間に第1極性を持つ電圧が印加されると、前記オフ状態から前記オン状態に切り替わるように構成される
請求項3記載のスイッチ素子。 - 前記活性領域は、前記制御電極と前記第1及び第2電極との間に、前記第1極性とは逆の極性の第2極性を持つ電圧が印加されると、前記オン状態から前記オフ状態に切り替わるように構成される
請求項5記載のスイッチ素子。 - 前記活性領域は、前記オン状態において前記第1及び第2電極の間に導電チャネルが形成される
請求項3記載のスイッチ素子。 - 前記活性領域は、低インピーダンス状態と高インピーダンス状態とを選択的に取り得るように構成される
請求項2記載のスイッチ素子。 - 前記電界は、前記活性領域を前記低インピーダンス状態と前記高インピーダンス状態とで切り替えるように制御される
請求項8記載のスイッチ素子。 - 前記活性領域は、前記制御電極と前記第1及び第2電極との間に第1極性を持つ電圧が印加されると、前記高インピーダンス状態から前記低インピーダンス状態に切り替わるように構成される
請求項8記載のスイッチ素子。 - 前記活性領域は、前記制御電極と前記第1及び第2電極との間に、前記第1極性とは逆の極性の第2極性を持つ電圧が印加されると、前記低インピーダンス状態から前記高インピーダンス状態に切り替わるように構成される
請求項10記載のスイッチ素子。 - 前記活性領域は、第1動作モード及び第2動作モードを提供するように構成される
請求項4記載のスイッチ素子。 - 前記活性領域は、前記第1動作モードにおけるオン状態のインピーダンスが前記第2動作モードにおけるオン状態のインピーダンスよりも低くなるように構成される
請求項12記載のスイッチ素子。 - 前記第1モードにおけるオン状態とオフ状態との間の切り替え時間は、前記第2モードにおけるオン状態とオフ状態との間の切り替え時間よりも長い
請求項12記載のスイッチ素子。 - 前記第1モードにおいて前記活性領域を切り替えるために要する電界強度が、前記第2モードにおけるそれよりも高い
請求項12記載のスイッチ素子。 - 前記複数のイオン錯体の各々は、NaイオンとClイオンとを含んで構成される
請求項2記載のスイッチ素子。 - 前記複数のイオン錯体の各々は、CsイオンとClイオンとを含んで構成される
請求項2記載のスイッチ素子。 - 前記分子系は、準一次元分子マトリクスを含んで構成される
請求項2記載のスイッチ素子。 - 前記分子系は、構造的及び電気的に異方性の分子マトリクスを含んで構成される
請求項2記載のスイッチ素子。 - 前記分子系は、重共役化合物を含んで構成される
請求項2記載のスイッチ素子。 - 前記分子系は、芳香族分子を含んで構成される
請求項2記載のスイッチ素子。 - 前記分子系は、複素環分子を含んで構成される
請求項2記載のスイッチ素子。 - 前記分子系は、ポルフィリンを含んで構成される
請求項2記載のスイッチ素子。 - 前記分子系は、フタロシアミンを含んで構成される
請求項2記載のスイッチ素子。 - 前記分子系は、異方性無機物を含んで構成される
請求項2記載のスイッチ素子。 - 前記制御電極に隣接して絶縁層をさらに備える
請求項2記載のスイッチ素子。 - 前記絶縁層は、前記制御電極と前記活性領域との間に挟まれて形成される
請求項26記載のスイッチ素子。 - 基板をさらに含んで構成される
請求項27記載のスイッチ素子。 - 前記第1及び第2電極は、前記基板に設けられる
請求項28記載のスイッチ素子。 - 前記活性領域は、前記第1及び第2電極に電気的に接触されるように、前記基板上に形成される
請求項29記載のスイッチ素子。 - 前記絶縁層は、前記制御電極と前記第1電極との間に挟まれて形成される
請求項26記載のスイッチ素子。 - 前記活性領域は、前記第1電極と前記第2電極との間に挟まれて形成される
請求項31記載のスイッチ素子。 - ゲート端子と、
少なくとも2つの信号端子と、
前記2つの信号端子に電気的に接続されており、前記ゲート端子に印加される信号に応答してオン状態とオフ状態とが切り替わり、内部に複数のイオン錯体を有する分子系を備える能動素子とにより構成される
メモリスイッチ。 - 前記能動素子は、オン状態のときのインピーダンスがオフ状態のときのインピーダンスよりも低くなるように構成される、
請求項33記載のメモリスイッチ。 - 前記能動素子は、印加される電界の強度がしきい値を超えると、前記オン状態と前記オフ状態とが切り替わるように構成される
請求項33記載のメモリスイッチ。 - 前記能動素子は、電界が第1極性をもつときに、前記オフ状態から前記オン状態に切り替わるように構成される
請求項35記載のメモリスイッチ。 - 前記能動素子は、電界が前記第1極性とは逆の極性の第2極性を持つときに、前記オン状態から前記オフ状態に切り替わるように構成される
請求項36記載のメモリスイッチ。 - 前記能動素子に印加される電界は、前記メモリスイッチのアドレス指定を行う
請求項33記載のメモリスイッチ。 - 絶縁基板をさらに備える
請求項33記載のメモリスイッチ。 - 前記一対の信号端子は、前記基板上に設けられる
請求項39記載のメモリスイッチ。 - 前記能動素子は、前記基板上で前記一対の信号端子間に設けられる
請求項40記載のメモリスイッチ。 - ゲート端子と前記能動素子との間に絶縁体が設けられる
請求項41記載のメモリスイッチ。 - ゲート端子と一方の信号端子との間に絶縁体が設けられる
請求項33記載のメモリスイッチ。 - 前記能動素子は、前記一対の信号端子間に設けられる
請求項43記載のメモリスイッチ。 - 第1及び第2切替モードを有する
請求項33記載のメモリスイッチ。 - 前記第1切替モードで前記能動素子に印加されて前記メモリスイッチを切り替える電界強度は、前記第2切替モードにおけるそれよりも高い
請求項45記載のメモリスイッチ。 - 前記第1切替モードにおける切り替え時間が、前記第2切替モードにおけるそれよりも長い
請求項46記載のメモリスイッチ。 - 前記第1切替モードにおけるデータ書き込み時間が、前記第2モードにおけるそれよりも長い
請求項46記載のメモリスイッチ。 - 前記イオン錯体の各々がNaイオンとClイオンとを含む
請求項33記載のメモリスイッチ。 - 制御端子と、一対の信号端子と、前記一対の信号端子間に電気的に接続された分子系を備える能動素子と、を有する素子をスイッチングさせる方法であって、
前記制御端子に、前記信号端子に関する第1の極性の信号を印加して、前記素子をオフ状態からオン状態に切り替え、前記能動素子のオン状態におけるインピーダンスがオフ状態におけるインピーダンスよりも低くなる段階を含む、
方法。 - 前記能動素子が前記分子系内に分布するイオン錯体をさらに含む
請求項50記載の方法。 - 前記制御端子に、前記信号端子に関する前記第1極性とは逆の第2の極性を持つ信号を印加して、前記素子をオン状態からオフ状態に切り替える段階をさらに含む
請求項50記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28905701P | 2001-05-07 | 2001-05-07 | |
US60/289,057 | 2001-05-07 | ||
PCT/US2002/014239 WO2002091494A1 (en) | 2001-05-07 | 2002-05-07 | Switch element having memeory effect |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005524967A true JP2005524967A (ja) | 2005-08-18 |
JP4731794B2 JP4731794B2 (ja) | 2011-07-27 |
Family
ID=23109850
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002588649A Expired - Fee Related JP4731794B2 (ja) | 2001-05-07 | 2002-05-07 | メモリ効果を有するスイッチ素子及び該素子をスイッチングさせる方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6809955B2 (ja) |
EP (1) | EP1388179A1 (ja) |
JP (1) | JP4731794B2 (ja) |
KR (1) | KR100895901B1 (ja) |
CN (1) | CN100367528C (ja) |
WO (1) | WO2002091494A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006196881A (ja) * | 2004-12-14 | 2006-07-27 | Semiconductor Energy Lab Co Ltd | 半導体装置、及びその作製方法 |
JP2008084980A (ja) * | 2006-09-26 | 2008-04-10 | Canon Inc | デバイス |
JP2008222796A (ja) * | 2007-03-09 | 2008-09-25 | Canon Inc | 螺旋型置換ポリアセチレン構造体、その製造方法、デバイス構造、イオン輸送膜および気体分離膜 |
US8450724B2 (en) | 2006-09-26 | 2013-05-28 | Canon Kabushiki Kaisha | Electrical device containing helical substituted polyacetylene |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4886160B2 (ja) * | 2001-05-07 | 2012-02-29 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | セルフアセンブリによるポリマーフィルムを用いた記憶装置およびその製造方法 |
DE60233486D1 (de) | 2001-05-07 | 2009-10-08 | Advanced Micro Devices Inc | Floating-gate-speicherbaustein, der zusammengesetztes molekularmaterial verwendet |
US6809955B2 (en) | 2001-05-07 | 2004-10-26 | Advanced Micro Devices, Inc. | Addressable and electrically reversible memory switch |
WO2002091385A1 (en) * | 2001-05-07 | 2002-11-14 | Advanced Micro Devices, Inc. | Molecular memory cell |
WO2002091496A2 (en) | 2001-05-07 | 2002-11-14 | Advanced Micro Devices, Inc. | Reversible field-programmable electric interconnects |
WO2002091495A2 (en) * | 2001-05-07 | 2002-11-14 | Coatue Corporation | Molecular memory device |
EP1434232B1 (en) | 2001-08-13 | 2007-09-19 | Advanced Micro Devices, Inc. | Memory cell |
US6768157B2 (en) | 2001-08-13 | 2004-07-27 | Advanced Micro Devices, Inc. | Memory device |
US6858481B2 (en) * | 2001-08-13 | 2005-02-22 | Advanced Micro Devices, Inc. | Memory device with active and passive layers |
US6838720B2 (en) * | 2001-08-13 | 2005-01-04 | Advanced Micro Devices, Inc. | Memory device with active passive layers |
US6806526B2 (en) | 2001-08-13 | 2004-10-19 | Advanced Micro Devices, Inc. | Memory device |
US7038935B2 (en) * | 2002-08-02 | 2006-05-02 | Unity Semiconductor Corporation | 2-terminal trapped charge memory device with voltage switchable multi-level resistance |
US7442997B2 (en) * | 2002-08-28 | 2008-10-28 | Guobiao Zhang | Three-dimensional memory cells |
US7012276B2 (en) | 2002-09-17 | 2006-03-14 | Advanced Micro Devices, Inc. | Organic thin film Zener diodes |
US6944047B2 (en) * | 2002-12-19 | 2005-09-13 | North Carolina State University | Variable-persistence molecular memory devices and methods of operation thereof |
WO2004064091A1 (en) * | 2003-01-09 | 2004-07-29 | Molecular Biophysics Inc. | Liquid based electronic device |
US7049153B2 (en) * | 2003-04-23 | 2006-05-23 | Micron Technology, Inc. | Polymer-based ferroelectric memory |
US6916696B1 (en) | 2003-11-20 | 2005-07-12 | Advanced Micro Devices, Inc. | Method for manufacturing a memory element |
US6956761B2 (en) * | 2004-03-10 | 2005-10-18 | Micron Technology, Inc. | Method to manufacture polymer memory with copper ion switching species |
US7773404B2 (en) | 2005-01-07 | 2010-08-10 | Invisage Technologies, Inc. | Quantum dot optical devices with enhanced gain and sensitivity and methods of making same |
US7742322B2 (en) | 2005-01-07 | 2010-06-22 | Invisage Technologies, Inc. | Electronic and optoelectronic devices with quantum dot films |
US7326908B2 (en) | 2004-04-19 | 2008-02-05 | Edward Sargent | Optically-regulated optical emission using colloidal quantum dot nanocrystals |
US7746681B2 (en) | 2005-01-07 | 2010-06-29 | Invisage Technologies, Inc. | Methods of making quantum dot films |
US7289353B2 (en) * | 2004-08-17 | 2007-10-30 | Spansion, Llc | Systems and methods for adjusting programming thresholds of polymer memory cells |
CA2519608A1 (en) | 2005-01-07 | 2006-07-07 | Edward Sargent | Quantum dot-polymer nanocomposite photodetectors and photovoltaics |
CN1832464B (zh) * | 2005-03-11 | 2010-09-15 | 中兴通讯股份有限公司 | 正交频分复用***的导频分配装置及其方法 |
US8178357B2 (en) * | 2007-07-26 | 2012-05-15 | The Regents Of The University Of California | Peroxide chemical sensor and sensing method |
US7879678B2 (en) * | 2008-02-28 | 2011-02-01 | Versatilis Llc | Methods of enhancing performance of field-effect transistors and field-effect transistors made thereby |
CN102365750B (zh) * | 2009-03-27 | 2014-03-12 | 惠普开发有限公司 | 具有本征二极管的可切换结 |
KR101110594B1 (ko) * | 2010-02-09 | 2012-02-15 | 한국세라믹기술원 | 메모리 소자의 적층막 및 이의 제조방법 |
EP2966684B1 (en) * | 2013-03-09 | 2020-10-14 | Japan Science and Technology Agency | Electronic element |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62222675A (ja) * | 1986-03-25 | 1987-09-30 | Toshiba Corp | 電界効果トランジスタ |
JPH0239568A (ja) * | 1988-07-29 | 1990-02-08 | Olympus Optical Co Ltd | スイッチング素子 |
JPH03238873A (ja) * | 1990-02-15 | 1991-10-24 | Matsushita Electric Ind Co Ltd | ニューラルネットワーク用電気可塑性素子およびその制御方法 |
JPH04137666A (ja) * | 1990-09-28 | 1992-05-12 | Toshiba Corp | 有機薄膜素子 |
JPH1056177A (ja) * | 1996-05-22 | 1998-02-24 | Internatl Business Mach Corp <Ibm> | Mott遷移分子電界効果トランジスタ |
Family Cites Families (104)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2002A (en) * | 1841-03-12 | Tor and planter for plowing | ||
US2001A (en) * | 1841-03-12 | Sawmill | ||
JPS5012598B1 (ja) * | 1970-04-02 | 1975-05-13 | ||
US3810127A (en) * | 1970-06-23 | 1974-05-07 | Intel Corp | Programmable circuit {13 {11 the method of programming thereof and the devices so programmed |
JPS5589980A (en) * | 1978-11-27 | 1980-07-08 | Nec Corp | Semiconductor memory unit |
US4267558A (en) * | 1979-01-05 | 1981-05-12 | Texas Instruments Incorporated | Electrically erasable memory with self-limiting erase |
US4652894A (en) * | 1980-03-14 | 1987-03-24 | The Johns Hopkins University | Electrical organic thin film switching device switching between detectably different oxidation states |
US4371883A (en) * | 1980-03-14 | 1983-02-01 | The Johns Hopkins University | Current controlled bistable electrical organic thin film switching device |
JPS5864068A (ja) * | 1981-10-14 | 1983-04-16 | Agency Of Ind Science & Technol | 不揮発性半導体メモリの書き込み方法 |
US4677742A (en) * | 1983-01-18 | 1987-07-07 | Energy Conversion Devices, Inc. | Electronic matrix arrays and method for making the same |
GB2160049B (en) * | 1984-05-28 | 1987-06-03 | Suwa Seikosha Kk | A non-volatile memory circuit |
US5034192A (en) * | 1984-11-23 | 1991-07-23 | Massachusetts Institute Of Technology | Molecule-based microelectronic devices |
US4717673A (en) * | 1984-11-23 | 1988-01-05 | Massachusetts Institute Of Technology | Microelectrochemical devices |
US4631562A (en) * | 1985-05-31 | 1986-12-23 | Rca Corporation | Zener diode structure |
DE3602887A1 (de) * | 1986-01-31 | 1987-08-06 | Bayer Ag | Nichtfluechtiger elektronischer speicher |
US4727514A (en) * | 1986-02-11 | 1988-02-23 | Texas Instruments Incorporated | Programmable memory with memory cells programmed by addressing |
US4834911A (en) * | 1986-08-25 | 1989-05-30 | Electro-Organic Company | Intrinsically conductive and semiconductive polymers, products formed with such polymers and methods of forming same |
DE3751376T2 (de) * | 1986-10-13 | 1995-11-16 | Canon Kk | Schaltungselement. |
JPH01100788A (ja) * | 1987-10-13 | 1989-04-19 | Hitachi Ltd | 半導体集積回路装置 |
US4839700A (en) * | 1987-12-16 | 1989-06-13 | California Institute Of Technology | Solid-state non-volatile electronically programmable reversible variable resistance device |
US5440518A (en) * | 1991-06-12 | 1995-08-08 | Hazani; Emanuel | Non-volatile memory circuits, architecture and methods |
US5136212A (en) * | 1988-02-18 | 1992-08-04 | Canon Kabushiki Kaisha | Electron emitting device, electron generator employing said electron emitting device, and method for driving said generator |
US5196912A (en) * | 1988-10-28 | 1993-03-23 | Casio Computer Co., Ltd. | Thin film transistor having memory function and method for using thin film transistor as memory element |
US5892244A (en) * | 1989-01-10 | 1999-04-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor |
JP2636035B2 (ja) | 1989-02-27 | 1997-07-30 | 松下電器産業株式会社 | 強誘電性液晶組成物および強誘電性液晶表示装置 |
DE69018348T2 (de) * | 1989-07-25 | 1995-08-03 | Matsushita Electric Ind Co Ltd | Speicherbauelement aus organischem Halbleiter mit einer MISFET-Struktur und sein Kontrollverfahren. |
US5206525A (en) * | 1989-12-27 | 1993-04-27 | Nippon Petrochemicals Co., Ltd. | Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials |
US5272101A (en) * | 1990-04-12 | 1993-12-21 | Actel Corporation | Electrically programmable antifuse and fabrication processes |
US5552627A (en) * | 1990-04-12 | 1996-09-03 | Actel Corporation | Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers |
US5130380A (en) * | 1990-05-29 | 1992-07-14 | Carew Evan B | Conductive polymers |
JPH0770731B2 (ja) * | 1990-11-22 | 1995-07-31 | 松下電器産業株式会社 | 電気可塑性素子 |
US5245543A (en) * | 1990-12-21 | 1993-09-14 | Texas Instruments Incorporated | Method and apparatus for integrated circuit design |
US5296716A (en) * | 1991-01-18 | 1994-03-22 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
FR2672158B1 (fr) * | 1991-01-24 | 1993-04-09 | Commissariat Energie Atomique | Capteur pour la detection d'especes chimiques ou de photons utilisant un transistor a effet de champ. |
JP3224829B2 (ja) * | 1991-08-15 | 2001-11-05 | 株式会社東芝 | 有機電界効果型素子 |
GB9117680D0 (en) * | 1991-08-16 | 1991-10-02 | Philips Electronic Associated | Electronic matrix array devices |
WO1993004506A1 (en) | 1991-08-19 | 1993-03-04 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5563081A (en) * | 1992-03-23 | 1996-10-08 | Rohm Co., Inc. | Method for making a nonvolatile memory device utilizing a field effect transistor having a ferroelectric gate film |
JP2822791B2 (ja) * | 1992-06-30 | 1998-11-11 | 日本電気株式会社 | 半導体装置 |
RU2071126C1 (ru) | 1992-08-27 | 1996-12-27 | Кригер Юрий Генрихович | Запоминающий элемент |
US5579199A (en) * | 1992-11-26 | 1996-11-26 | Sharp Kabushiki Kaisha | Non-volatile memory device and a method for producing the same |
US5581111A (en) * | 1993-07-07 | 1996-12-03 | Actel Corporation | Dielectric-polysilicon-dielectric antifuse for field programmable logic applications |
US5818749A (en) * | 1993-08-20 | 1998-10-06 | Micron Technology, Inc. | Integrated circuit memory device |
JPH07106440A (ja) | 1993-10-04 | 1995-04-21 | Hitachi Ltd | 不揮発性半導体記憶装置及びそれを用いた応用システム |
JP3467858B2 (ja) * | 1993-11-02 | 2003-11-17 | ソニー株式会社 | 光電変換素子 |
JP4278721B2 (ja) * | 1994-09-30 | 2009-06-17 | テキサス インスツルメンツ インコーポレイテツド | 高い逆降伏電圧を有するツェナーダイオード |
JPH08222648A (ja) | 1995-02-14 | 1996-08-30 | Canon Inc | 記憶装置 |
US5572472A (en) * | 1995-04-14 | 1996-11-05 | Delco Electronics Corporation | Integrated zener-zap nonvolatile memory cell with programming and pretest capability |
NO952545D0 (no) * | 1995-06-23 | 1995-06-23 | Opticon As | Fremgangsmåte til skriving av data i et optisk minne |
US5691935A (en) * | 1995-07-13 | 1997-11-25 | Douglass; Barry G. | Memory element and method of operation thereof |
US5849403A (en) * | 1995-09-13 | 1998-12-15 | Kabushiki Kaisha Toshiba | Organic thin film device |
EP0772244B1 (en) * | 1995-11-06 | 2000-03-22 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | MOS technology power device with low output resistance and low capacity and related manufacturing process |
DE69728113T2 (de) * | 1996-05-22 | 2005-02-10 | Shipro Kasei Kaisha, Ltd. | Negativer widerstand des molekulardispersionstyps und verfahren zur herstellung |
US5761115A (en) * | 1996-05-30 | 1998-06-02 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
US5734605A (en) * | 1996-09-10 | 1998-03-31 | Motorola, Inc. | Multi-layer magnetic tunneling junction memory cells |
DE19640239A1 (de) | 1996-09-30 | 1998-04-02 | Siemens Ag | Speicherzelle mit Polymerkondensator |
JP3349638B2 (ja) * | 1996-11-15 | 2002-11-25 | シャープ株式会社 | 表示装置を駆動する方法および回路 |
WO1998044567A1 (fr) * | 1997-03-28 | 1998-10-08 | Hitachi, Ltd. | Dispositif de memoire remanente a semi-conducteur, dispositif a semi-conducteur et procedes de fabrication associes de ceux-ci |
NO972803D0 (no) * | 1997-06-17 | 1997-06-17 | Opticom As | Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte |
IL121312A (en) | 1997-07-14 | 2001-09-13 | Technion Res & Dev Foundation | Microelectronic components, their manufacture and electronic networks containing them |
NO304956B1 (no) | 1997-07-22 | 1999-03-08 | Opticom As | Elektrodeanordning uten og med et funksjonselement, samt en elektrodeinnretning dannet av elektrodeanordninger med funksjonselement og anvendelser derav |
NO973993L (no) | 1997-09-01 | 1999-03-02 | Opticom As | Leseminne og leseminneinnretninger |
SG77608A1 (en) * | 1997-10-03 | 2001-01-16 | Inst Data Storage | Improvements relating to optical memories using electron trapping material |
CA2306384A1 (en) | 1997-10-14 | 1999-04-22 | Patterning Technologies Limited | Method of forming an electronic device |
DE69825923T2 (de) * | 1997-12-04 | 2005-09-01 | Axon Technologies Corp., Scottsdale | Programmierbare aggregierende Unterflächenmetallisierungsstruktur |
NO306529B1 (no) * | 1998-01-16 | 1999-11-15 | Opticom As | Transistor |
CN1171301C (zh) * | 1998-01-28 | 2004-10-13 | 薄膜电子有限公司 | 产生和擦除导电和半导电结构的方法及电场发生器调制器 |
US6064589A (en) * | 1998-02-02 | 2000-05-16 | Walker; Darryl G. | Double gate DRAM memory cell |
JPH11312393A (ja) * | 1998-02-19 | 1999-11-09 | Sanyo Electric Co Ltd | 半導体メモリ装置の書き込み回路 |
US5930162A (en) * | 1998-09-30 | 1999-07-27 | Motorola, Inc. | Quantum random address memory with polymer mixer and/or memory |
GB2343308B (en) | 1998-10-30 | 2000-10-11 | Nikolai Franz Gregor Schwabe | Magnetic storage device |
US6548843B2 (en) * | 1998-11-12 | 2003-04-15 | International Business Machines Corporation | Ferroelectric storage read-write memory |
US6635914B2 (en) | 2000-09-08 | 2003-10-21 | Axon Technologies Corp. | Microelectronic programmable device and methods of forming and programming the same |
US6487106B1 (en) * | 1999-01-12 | 2002-11-26 | Arizona Board Of Regents | Programmable microelectronic devices and method of forming and programming same |
EP1159743B1 (en) | 1999-02-11 | 2007-05-02 | Arizona Board of Regents | Programmable microelectronic devices and methods of forming and programming same |
AU3698100A (en) | 1999-02-12 | 2000-08-29 | Board Of Trustees Of Michigan State University | Nanocapsules containing charged particles, their uses and methods of forming thesame |
US6180956B1 (en) * | 1999-03-03 | 2001-01-30 | International Business Machine Corp. | Thin film transistors with organic-inorganic hybrid materials as semiconducting channels |
US6459095B1 (en) * | 1999-03-29 | 2002-10-01 | Hewlett-Packard Company | Chemically synthesized and assembled electronics devices |
US6128214A (en) * | 1999-03-29 | 2000-10-03 | Hewlett-Packard | Molecular wire crossbar memory |
FR2792761B1 (fr) * | 1999-04-21 | 2003-05-23 | St Microelectronics Sa | Dispositif de programmation d'une memoire non volatile electriquement programmable |
JP4491870B2 (ja) * | 1999-10-27 | 2010-06-30 | ソニー株式会社 | 不揮発性メモリの駆動方法 |
US6384427B1 (en) * | 1999-10-29 | 2002-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
DE19959904C2 (de) | 1999-12-11 | 2002-03-14 | Edward William Schlag | Verfahren und Vorrichtung zum Steuern eines elektrischen Stromes durch Biomoleküle |
NO315728B1 (no) * | 2000-03-22 | 2003-10-13 | Thin Film Electronics Asa | Multidimensjonal adresseringsarkitektur for elektroniske innretninger |
US7194085B2 (en) | 2000-03-22 | 2007-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
US6449184B2 (en) * | 2000-06-19 | 2002-09-10 | Matsushita Electric Industrial Co., Ltd. | Method for driving semiconductor memory |
US6403397B1 (en) * | 2000-06-28 | 2002-06-11 | Agere Systems Guardian Corp. | Process for fabricating organic semiconductor device involving selective patterning |
US7025277B2 (en) | 2000-09-25 | 2006-04-11 | The Trustees Of Princeton University | Smart card composed of organic processing elements |
AU2002227138A1 (en) | 2000-10-24 | 2002-05-06 | Molecular Electronics Corporation | Three-terminal field-controlled molecular devices |
WO2002037500A1 (en) | 2000-10-31 | 2002-05-10 | The Regents Of The University Of California | Organic bistable device and organic memory cells |
NO20005980L (no) | 2000-11-27 | 2002-05-28 | Thin Film Electronics Ab | Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling |
JP4667594B2 (ja) * | 2000-12-25 | 2011-04-13 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP2002230982A (ja) | 2001-02-01 | 2002-08-16 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
US6407953B1 (en) * | 2001-02-02 | 2002-06-18 | Matrix Semiconductor, Inc. | Memory array organization and related test method particularly well suited for integrated circuits having write-once memory arrays |
US6919633B2 (en) | 2001-03-07 | 2005-07-19 | Hewlett-Packard Development Company, L.P. | Multi-section foldable memory device |
US6618295B2 (en) | 2001-03-21 | 2003-09-09 | Matrix Semiconductor, Inc. | Method and apparatus for biasing selected and unselected array lines when writing a memory array |
WO2002091496A2 (en) | 2001-05-07 | 2002-11-14 | Advanced Micro Devices, Inc. | Reversible field-programmable electric interconnects |
JP4886160B2 (ja) | 2001-05-07 | 2012-02-29 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | セルフアセンブリによるポリマーフィルムを用いた記憶装置およびその製造方法 |
WO2002091385A1 (en) | 2001-05-07 | 2002-11-14 | Advanced Micro Devices, Inc. | Molecular memory cell |
DE60233486D1 (de) | 2001-05-07 | 2009-10-08 | Advanced Micro Devices Inc | Floating-gate-speicherbaustein, der zusammengesetztes molekularmaterial verwendet |
US6809955B2 (en) | 2001-05-07 | 2004-10-26 | Advanced Micro Devices, Inc. | Addressable and electrically reversible memory switch |
WO2002091495A2 (en) | 2001-05-07 | 2002-11-14 | Coatue Corporation | Molecular memory device |
EP1434232B1 (en) | 2001-08-13 | 2007-09-19 | Advanced Micro Devices, Inc. | Memory cell |
US6674121B2 (en) * | 2001-12-14 | 2004-01-06 | The Regents Of The University Of California | Method and system for molecular charge storage field effect transistor |
-
2002
- 2002-05-07 US US10/139,746 patent/US6809955B2/en not_active Expired - Lifetime
- 2002-05-07 CN CNB028117433A patent/CN100367528C/zh not_active Expired - Fee Related
- 2002-05-07 KR KR1020037014468A patent/KR100895901B1/ko not_active IP Right Cessation
- 2002-05-07 JP JP2002588649A patent/JP4731794B2/ja not_active Expired - Fee Related
- 2002-05-07 EP EP02725937A patent/EP1388179A1/en not_active Withdrawn
- 2002-05-07 WO PCT/US2002/014239 patent/WO2002091494A1/en active Search and Examination
-
2004
- 2004-06-21 US US10/873,069 patent/US7145793B1/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62222675A (ja) * | 1986-03-25 | 1987-09-30 | Toshiba Corp | 電界効果トランジスタ |
JPH0239568A (ja) * | 1988-07-29 | 1990-02-08 | Olympus Optical Co Ltd | スイッチング素子 |
JPH03238873A (ja) * | 1990-02-15 | 1991-10-24 | Matsushita Electric Ind Co Ltd | ニューラルネットワーク用電気可塑性素子およびその制御方法 |
JPH04137666A (ja) * | 1990-09-28 | 1992-05-12 | Toshiba Corp | 有機薄膜素子 |
JPH1056177A (ja) * | 1996-05-22 | 1998-02-24 | Internatl Business Mach Corp <Ibm> | Mott遷移分子電界効果トランジスタ |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006196881A (ja) * | 2004-12-14 | 2006-07-27 | Semiconductor Energy Lab Co Ltd | 半導体装置、及びその作製方法 |
JP2008084980A (ja) * | 2006-09-26 | 2008-04-10 | Canon Inc | デバイス |
US8450724B2 (en) | 2006-09-26 | 2013-05-28 | Canon Kabushiki Kaisha | Electrical device containing helical substituted polyacetylene |
JP2008222796A (ja) * | 2007-03-09 | 2008-09-25 | Canon Inc | 螺旋型置換ポリアセチレン構造体、その製造方法、デバイス構造、イオン輸送膜および気体分離膜 |
US8394506B2 (en) | 2007-03-09 | 2013-03-12 | Canon Kabushiki Kaisha | Helical substituted polyacetylene structure, method for producing the same, device structure, ion transport film and gas separation film |
Also Published As
Publication number | Publication date |
---|---|
KR100895901B1 (ko) | 2009-05-04 |
US20020163829A1 (en) | 2002-11-07 |
JP4731794B2 (ja) | 2011-07-27 |
CN100367528C (zh) | 2008-02-06 |
WO2002091494A1 (en) | 2002-11-14 |
KR20040062446A (ko) | 2004-07-07 |
US7145793B1 (en) | 2006-12-05 |
CN1515039A (zh) | 2004-07-21 |
EP1388179A1 (en) | 2004-02-11 |
US6809955B2 (en) | 2004-10-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4731794B2 (ja) | メモリ効果を有するスイッチ素子及び該素子をスイッチングさせる方法 | |
US6781868B2 (en) | Molecular memory device | |
JP4514016B2 (ja) | 複合分子材料を使用したフローティングゲートメモリデバイス | |
US7113420B2 (en) | Molecular memory cell | |
US6838720B2 (en) | Memory device with active passive layers | |
US6858481B2 (en) | Memory device with active and passive layers | |
JP5255276B2 (ja) | 可変データ保持時間を有するメモリセル | |
US6844608B2 (en) | Reversible field-programmable electric interconnects | |
US7273766B1 (en) | Variable density and variable persistent organic memory devices, methods, and fabrication | |
US8179712B2 (en) | Non-volatile memory with metal-polymer bi-layer | |
EP1528573B1 (en) | Photochromic nonvolatile memory and partial erasing method | |
Lee et al. | Polymer and organic nonvolatile memory devices | |
Mikolajick et al. | An introduction to nonvolatile memory technology |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050506 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090519 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090713 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100119 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100401 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20100421 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20100525 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100728 |
|
RD05 | Notification of revocation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7425 Effective date: 20100902 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101027 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110215 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110323 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110420 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140428 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |