JP2005512298A - Elディスプレイ装置及び該装置の製造方法 - Google Patents
Elディスプレイ装置及び該装置の製造方法 Download PDFInfo
- Publication number
- JP2005512298A JP2005512298A JP2003551852A JP2003551852A JP2005512298A JP 2005512298 A JP2005512298 A JP 2005512298A JP 2003551852 A JP2003551852 A JP 2003551852A JP 2003551852 A JP2003551852 A JP 2003551852A JP 2005512298 A JP2005512298 A JP 2005512298A
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- Prior art keywords
- electrode
- electrically insulating
- substrate
- opening
- insulating structure
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 7
- 230000001154 acute effect Effects 0.000 claims description 4
- 239000012777 electrically insulating material Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L2029/42388—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor characterised by the shape of the insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/2901—Shape
- H01L2224/29011—Shape comprising apertures or cavities
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
Abstract
Description
Claims (11)
- 基板と、前記基板の上に設けられる第1の電極と、前記第1の電極の上に設けられる第2の電極と、前記第1の電極の少なくとも1つの上に設けられ、前記第2の電極の2つを分離させる、少なくとも1つの電気絶縁性の構造体とを有する、エレクトロルミネッセントディスプレイ装置のような装置であって、
前記電気絶縁性の構造体が、前記構造体の上面から前記構造体の下の前記第1の電極まで延在する開口を有することを特徴とする装置。 - 導電性の材料が、前記電気絶縁性の構造体の中に設けられるか、及び/又は前記電気絶縁性の構造体の上に設けられ、前記構造体の下の前記第1の電極に接触する、請求項1に記載の装置。
- 前記開口の壁の少なくとも一部が、前記基板の上面と正の角をなすか、又は前記基板の上面に平行な仮想上の平面と正の角をなす、請求項1又は2に記載の装置。
- 複数の実質的に平行な第1の電極と、前記第1の電極と角をなす複数の実質的に平行な第2の電極と、前記第2の電極を分離させる複数の細長い実質的に平行な電気絶縁性の構造体と、前記第1の電極と前記第2の電極との間に設けられるエレクトロルミネッセント層とを有する、請求項1乃至3の何れか1項に記載の装置。
- 前記導電性の材料が、少なくともいくつかの前記電気絶縁性の構造体の上部に電気リードを形成し、少なくともいくつかの前記電気リードが、単一の第1の電極に電気的に接続される、請求項4に記載の装置。
- 基板の上に第1の電極を設けるステップと、前記第1の電極の上に少なくとも1つの電気絶縁性の構造体を設けるステップと、前記第1の電極の上であって、前記電気絶縁性の構造体の近傍に中間層を設けるステップとを少なくとも有する、エレクトロルミネッセントディスプレイ装置のような装置を製造する方法であって、
前記電気絶縁性の構造体が、前記電気絶縁性の構造体の上面から前記構造体の下の前記第1の電極まで延在する開口を備えることを特徴とする方法。 - 導電性の材料が、前記中間層及び前記電気絶縁性の構造体の上に成膜され、それゆえ前記構造体の下の前記第1の電極に接触する層を形成する、請求項6に記載の方法。
- 前記開口の壁の少なくとも一部が、前記基板の上面と正の角をなすか、又は前記基板の上面に平行な仮想上の平面と正の角をなす、請求項6又は7に記載の方法。
- 前記電気絶縁性の構造体がフォトレジストを有し、該構造体及び前記開口は、前記開口が形成されるべき複数の鋭角を有するマスクによって形成される、請求項8に記載の方法。
- 前記フォトレジストが、ネガ型フォトレジストである、請求項9に記載の方法。
- 前記開口の少なくとも一部が、犠牲的な構造体によって得られる、請求項6乃至9の何れか1項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01204744 | 2001-12-10 | ||
PCT/IB2002/004875 WO2003050893A1 (en) | 2001-12-10 | 2002-11-20 | El display device and method of manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005512298A true JP2005512298A (ja) | 2005-04-28 |
Family
ID=8181377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003551852A Pending JP2005512298A (ja) | 2001-12-10 | 2002-11-20 | Elディスプレイ装置及び該装置の製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7180239B2 (ja) |
EP (1) | EP1459393A1 (ja) |
JP (1) | JP2005512298A (ja) |
KR (1) | KR20040066156A (ja) |
CN (1) | CN1608327A (ja) |
AU (1) | AU2002347476A1 (ja) |
TW (1) | TW200409561A (ja) |
WO (1) | WO2003050893A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017217113A1 (ja) * | 2016-06-15 | 2017-12-21 | 株式会社Joled | 表示装置および電子機器 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE396500T1 (de) | 2002-03-20 | 2008-06-15 | Koninkl Philips Electronics Nv | Elektrolumineszente anzeigevorrichtungen mit aktiver matrix und ihre herstellungsverfahren |
JP4120279B2 (ja) * | 2002-06-07 | 2008-07-16 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置、有機エレクトロルミネッセンス装置の製造方法及び電子機器 |
AU2003259397A1 (en) * | 2002-09-20 | 2004-04-08 | Koninklijke Philips Electronics N.V. | Electrical device, a method for manufacturing an electrical device, test structure, a method for manufacturing such a test structure and a method for testing a display panel |
KR20050068794A (ko) * | 2003-12-30 | 2005-07-05 | 엘지.필립스 엘시디 주식회사 | 유기전계 발광소자와 그 제조방법 |
US7772763B2 (en) * | 2004-12-02 | 2010-08-10 | Lg Display Co., Ltd. | Organic electro-luminescence display device comprising grid shaped auxiliary electrode |
TWI259027B (en) * | 2005-04-29 | 2006-07-21 | Univision Technology Inc | Organic electroluminescence device capable of preventing long-distance short circuit |
CN101180922B (zh) * | 2005-05-23 | 2010-10-06 | 汤姆森特许公司 | 设置有复合透明上电极的、应用于照明或显示图像的发光面板 |
KR101143356B1 (ko) | 2005-06-30 | 2012-05-09 | 엘지디스플레이 주식회사 | 듀얼패널타입 유기전계발광 소자 및 그의 제조방법 |
JP2014089825A (ja) * | 2012-10-29 | 2014-05-15 | Nitto Denko Corp | 有機エレクトロルミネッセンス発光装置、及びその製造方法 |
Citations (5)
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JPH11204267A (ja) * | 1998-01-14 | 1999-07-30 | Sharp Corp | エレクトロルミネッセンスディスプレイパネル及びその製造方法 |
JP2001223079A (ja) * | 2000-02-09 | 2001-08-17 | Futaba Corp | 有機el表示素子 |
JP2002063991A (ja) * | 2000-08-22 | 2002-02-28 | Sony Corp | 有機電界発光素子及びその製造方法 |
JP2002208489A (ja) * | 2000-11-10 | 2002-07-26 | Toyota Industries Corp | 有機エレクトロルミネッセンスディスプレイパネル及びその製造方法 |
JP2002318556A (ja) * | 2001-04-20 | 2002-10-31 | Toshiba Corp | アクティブマトリクス型平面表示装置およびその製造方法 |
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JPH1197182A (ja) * | 1997-09-24 | 1999-04-09 | Pioneer Electron Corp | 発光ディスプレイパネル |
JP3641963B2 (ja) | 1999-02-15 | 2005-04-27 | 双葉電子工業株式会社 | 有機el素子とその製造方法 |
JP2003515909A (ja) | 1999-11-29 | 2003-05-07 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 有機エレクトロルミネッセント装置とその製造方法 |
US6699728B2 (en) * | 2000-09-06 | 2004-03-02 | Osram Opto Semiconductors Gmbh | Patterning of electrodes in oled devices |
TW594395B (en) * | 2000-09-29 | 2004-06-21 | Nippon Zeon Co | Photoresist composition for insulating film, insulating film for organic electroluminescent element, and process for producing the same |
KR100388271B1 (ko) * | 2000-10-14 | 2003-06-19 | 삼성에스디아이 주식회사 | 유기전계발광소자 및 그 제조방법 |
TW595249B (en) * | 2001-01-08 | 2004-06-21 | Chi Mei Optoelectronics Corp | Organic electroluminescent element structure and its manufacturing method |
-
2002
- 2002-11-20 EP EP02783409A patent/EP1459393A1/en not_active Withdrawn
- 2002-11-20 WO PCT/IB2002/004875 patent/WO2003050893A1/en active Application Filing
- 2002-11-20 CN CN02824561.XA patent/CN1608327A/zh active Pending
- 2002-11-20 US US10/497,871 patent/US7180239B2/en not_active Expired - Lifetime
- 2002-11-20 KR KR10-2004-7008850A patent/KR20040066156A/ko not_active Application Discontinuation
- 2002-11-20 JP JP2003551852A patent/JP2005512298A/ja active Pending
- 2002-11-20 AU AU2002347476A patent/AU2002347476A1/en not_active Abandoned
- 2002-11-26 TW TW091134302A patent/TW200409561A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11204267A (ja) * | 1998-01-14 | 1999-07-30 | Sharp Corp | エレクトロルミネッセンスディスプレイパネル及びその製造方法 |
JP2001223079A (ja) * | 2000-02-09 | 2001-08-17 | Futaba Corp | 有機el表示素子 |
JP2002063991A (ja) * | 2000-08-22 | 2002-02-28 | Sony Corp | 有機電界発光素子及びその製造方法 |
JP2002208489A (ja) * | 2000-11-10 | 2002-07-26 | Toyota Industries Corp | 有機エレクトロルミネッセンスディスプレイパネル及びその製造方法 |
JP2002318556A (ja) * | 2001-04-20 | 2002-10-31 | Toshiba Corp | アクティブマトリクス型平面表示装置およびその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017217113A1 (ja) * | 2016-06-15 | 2017-12-21 | 株式会社Joled | 表示装置および電子機器 |
US11081675B2 (en) | 2016-06-15 | 2021-08-03 | Joled Inc. | Display unit and electronic apparatus |
Also Published As
Publication number | Publication date |
---|---|
AU2002347476A1 (en) | 2003-06-23 |
KR20040066156A (ko) | 2004-07-23 |
CN1608327A (zh) | 2005-04-20 |
US7180239B2 (en) | 2007-02-20 |
EP1459393A1 (en) | 2004-09-22 |
TW200409561A (en) | 2004-06-01 |
WO2003050893A1 (en) | 2003-06-19 |
US20050017631A1 (en) | 2005-01-27 |
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