JP2005322780A - Solar cell - Google Patents

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JP2005322780A
JP2005322780A JP2004139710A JP2004139710A JP2005322780A JP 2005322780 A JP2005322780 A JP 2005322780A JP 2004139710 A JP2004139710 A JP 2004139710A JP 2004139710 A JP2004139710 A JP 2004139710A JP 2005322780 A JP2005322780 A JP 2005322780A
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insulating
compound thin
thin film
solar cell
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Kenichi Okumura
健一 奥村
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Toyota Motor Corp
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a solar cell having a high output efficiency by reducing the amount of recombination of carriers on the surface of a semiconductor substrate. <P>SOLUTION: The solar cell includes an n-type or a p-type single crystal semiconductor substrate (1) which forms a light absorbing layer, and insulating Si compound thin films (6a, 6b) formed at least on one of the light receiving surface of the semiconductor substrate (1) or a rear surface opposed to the light receiving surface. In such a solar cell, impurity iron having positive polarity is added into the insulating Si compound thin films (6a, 6b), so that the position of peak of adding amount thereof is at the side of the single crystal semiconductor substrate (1) from the center in the direction of the film thickness of the insulating Si compound thin films (6a, 6b). <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、キャリアの表面再結合を低減させることによって出力の向上を図った太陽電池に関する。   The present invention relates to a solar cell whose output is improved by reducing surface recombination of carriers.

単結晶太陽電池の出力効率を向上させる上で、素子表面におけるキャリアの再結合が大きな問題となっている。表面処理を施さない単結晶の半導体表面は結晶構造が分断された状態であり多数の未結合手が存在する。そのため、結晶表面には多くの結晶欠陥が存在し、この欠陥によってキャリアのトラップ準位が形成され、太陽光を受光することによって半導体層中に形成された電子、正孔の一部はこのようなトラップ準位に捕獲されて再結合し、素子の出力を低下させる。   In order to improve the output efficiency of a single crystal solar cell, the recombination of carriers on the element surface has become a big problem. The surface of a single crystal semiconductor that is not subjected to surface treatment is in a state where the crystal structure is divided, and there are a large number of dangling bonds. Therefore, there are many crystal defects on the crystal surface, and these defects form carrier trap levels. Some of the electrons and holes formed in the semiconductor layer by receiving sunlight are like this. It is trapped in a new trap level and recombines to lower the output of the device.

従来の太陽電池では、このような結晶表面の未結合手の存在を低減するために、半導体単結晶表面上にＳｉＯ2、ＳｉＮx等の絶縁性Ｓｉ化合物薄膜によるパッシベーション膜を形成している。このパッシベーション膜の形成によって、結晶表面の未結合手の存在が低減され結晶欠陥の発生が防止されるので、結晶表面でのキャリアの再結合が低減され、素子出力が向上する。 In conventional solar cells, in order to reduce the presence of such dangling bonds on the crystal surface, a passivation film made of an insulating Si compound thin film such as SiO 2 or SiN x is formed on the surface of the semiconductor single crystal. The formation of the passivation film reduces the presence of dangling bonds on the crystal surface and prevents the occurrence of crystal defects, thereby reducing the recombination of carriers on the crystal surface and improving the element output.

太陽電池にパッシベーション膜を形成することによって、パッシベーション膜中に固定電荷が生成されることが知られている（例えば特許文献１参照）。固定電荷とは、膜の構成元素（水素元素を含む）のみで発生するものであり、膜の結合状態によってその大小が決定される。パッシベーション膜にこのような固定電荷が形成されることにより、膜中に電界が発生し、この電界が結晶表面近傍の電子と正孔を分離し再結合を妨げる働きをする。これによって、さらにキャリアの再結合が低減され、素子出力が改善する。   It is known that a fixed charge is generated in a passivation film by forming a passivation film on a solar cell (see, for example, Patent Document 1). The fixed charge is generated only by the constituent elements (including hydrogen element) of the film, and the magnitude is determined by the bonding state of the film. When such a fixed charge is formed in the passivation film, an electric field is generated in the film, and this electric field functions to separate electrons and holes near the crystal surface and prevent recombination. This further reduces carrier recombination and improves device output.

従って、さらに表面近傍でのキャリアの再結合を低減し太陽電池の性能を向上させるためには、パッシベーション膜中の固定電荷量を増加させる必要がある。特許文献２は、パッシベーション膜中の固定電荷量を増加させることにより、太陽電池の性能の向上を図ることの可能性について記載している。ところが、特許文献２の段落（０００６）にも記載するように、膜中の固定電荷の量（固定電荷密度）は、膜構造や膜の形成条件によって変化するものの上限（１０12ｃｍ-2程度）があり、太陽電池の性能の向上に寄与する程度に増加させることが困難であった。 Therefore, in order to further reduce the recombination of carriers near the surface and improve the performance of the solar cell, it is necessary to increase the amount of fixed charges in the passivation film. Patent Document 2 describes the possibility of improving the performance of the solar cell by increasing the fixed charge amount in the passivation film. However, as described in paragraph (0006) of Patent Document 2, the amount of fixed charges (fixed charge density) in the film varies depending on the film structure and film formation conditions, and is an upper limit (about 10 12 cm −2. ) And it was difficult to increase it to the extent that it contributes to the improvement of the performance of the solar cell.

特開平２−２０１９７２号公報Japanese Patent Laid-Open No. 2-201972 特開平９−１９９７３８号公報JP-A-9-199738 特開平１０−２２９２２１号公報Japanese Patent Laid-Open No. 10-229221 特開平１１−９７４３８号公報Japanese Patent Laid-Open No. 11-97438 特開２００３−２７３１２０号公報JP 2003-273120 A

本発明は、上記従来の太陽電池の欠点を解決する目的でなされたもので、素子表面の欠陥によるキャリア再結合量をさらに低減して、高い出力効率を有する太陽電池を提供することをその課題とする。   The present invention has been made for the purpose of solving the drawbacks of the conventional solar cell, and further provides a solar cell having high output efficiency by further reducing the amount of carrier recombination due to defects on the surface of the element. And

本発明の第１の太陽電池は、上記課題を解決するために、光吸収層を形成するｎまたはｐ型の単結晶半導体基板と、前記半導体基板の受光面または該受光面に対向する裏面の少なくとも一方上に形成した絶縁性Ｓｉ化合物薄膜とを備える太陽電池において、前記絶縁性Ｓｉ化合物薄膜には正の極性を有する不純物イオンが添加されておりその添加量のピーク位置が前記絶縁性Ｓｉ化合物薄膜の膜厚方向の中心から前記単結晶半導体基板側にあるようにしている。   In order to solve the above problems, a first solar cell of the present invention includes an n-type or p-type single crystal semiconductor substrate forming a light absorption layer, and a light receiving surface of the semiconductor substrate or a back surface facing the light receiving surface. In a solar cell comprising an insulating Si compound thin film formed on at least one of them, impurity ions having a positive polarity are added to the insulating Si compound thin film, and the peak position of the added amount is the insulating Si compound The thin film is located on the single crystal semiconductor substrate side from the center in the film thickness direction.

上記構造の太陽電池では、絶縁性Ｓｉ化合物薄膜中に本来存在する固定電荷に加えて、正の極性を有する不純物イオンの添加によりさらに多くの電荷が形成されるので、絶縁性Ｓｉ化合物薄膜中の電荷密度は高濃度となる。さらに、不純物イオンの添加量のピークを絶縁性Ｓｉ化合物薄膜の膜厚方向の中心から基板側にあるようにしているので、不純物イオンの添加によって形成された電荷が基板に効果的に印加されるようになる。この結果、基板表面近傍において正孔に対する大きな障壁が形成され正孔の基板表面近傍への移動が阻止されるので、その部分での正孔数が電子数に比べて大きく減少する。この結果、キャリアの再結合量が低減し、太陽電池の出力効率が大きく向上する。   In the solar cell having the above structure, in addition to the fixed charge originally present in the insulating Si compound thin film, more charges are formed by the addition of impurity ions having a positive polarity. The charge density is high. Further, since the peak of the amount of impurity ions added is located on the substrate side from the center in the thickness direction of the insulating Si compound thin film, the charges formed by the addition of impurity ions are effectively applied to the substrate. It becomes like this. As a result, a large barrier against holes is formed in the vicinity of the substrate surface and the movement of holes to the vicinity of the substrate surface is prevented, so that the number of holes in that portion is greatly reduced compared to the number of electrons. As a result, the amount of carrier recombination is reduced, and the output efficiency of the solar cell is greatly improved.

本発明の第２の太陽電池では、上記課題を解決するために、光吸収層を形成するｎまたはｐ型の単結晶半導体基板と、前記半導体基板の受光面とは反対側の面に接して該基板中に形成された電子収集層および正孔収集層と、前記基板の前記反対側の面上に形成された絶縁性Ｓｉ化合物薄膜と、前記絶縁性Ｓｉ化合物薄膜上にその一部を露出させかつ前記絶縁性Ｓｉ化合物薄膜を貫通して前記電子収集層または正孔収集層のいずれか一方に接するように形成された複数の電極とを備える太陽電池において、前記絶縁性Ｓｉ化合物薄膜の前記正孔収集層に接する部分以外の部分に正の極性を有する不純物イオンを添加するようにしている。   In the second solar cell of the present invention, in order to solve the above problem, an n-type or p-type single crystal semiconductor substrate forming a light absorption layer and a surface opposite to the light receiving surface of the semiconductor substrate are in contact. An electron collecting layer and a hole collecting layer formed in the substrate, an insulating Si compound thin film formed on the opposite surface of the substrate, and a part thereof exposed on the insulating Si compound thin film And a plurality of electrodes formed so as to pass through the insulating Si compound thin film and to be in contact with either the electron collecting layer or the hole collecting layer. Impurity ions having a positive polarity are added to portions other than the portion in contact with the hole collection layer.

正孔収集層に接する部分に正の極性を有する不純物イオンを添加した場合は、添加されたイオンによる追加の電荷によって、絶縁性Ｓｉ化合物薄膜と基板間の界面が真性半導体に近い状態となる。そのため、電子と正孔とがほぼ同数存在し、再結合確率が高くなる。上記第２の太陽電池では、絶縁性Ｓｉ化合物薄膜の正孔収集層に接する部分に上述したように不純物イオンを積極的に添加しない構成としており、これによって、界面が真性半導体に近い状態となることを防止している。この結果、正孔収集層の表面近傍でのキャリアの再結合が防止され、さらに出力効率が増加する。   When impurity ions having a positive polarity are added to the portion in contact with the hole collection layer, the interface between the insulating Si compound thin film and the substrate becomes close to an intrinsic semiconductor due to the additional charge due to the added ions. Therefore, there are almost the same number of electrons and holes, and the recombination probability is increased. In the second solar cell, impurity ions are not positively added to the portion of the insulating Si compound thin film in contact with the hole collection layer as described above, whereby the interface becomes a state close to an intrinsic semiconductor. To prevent that. As a result, carrier recombination in the vicinity of the surface of the hole collection layer is prevented, and the output efficiency is further increased.

また、上記第２の太陽電池において、前記絶縁性Ｓｉ化合物薄膜の前記正孔収集層に接する部分に、負の極性を有する不純物イオンを添加することにより、絶縁性Ｓｉ化合物薄膜と正孔収集層との界面に電子に対する障壁が形成され、電子がこの部分に移動するのが阻止される。この結果、キャリア再結合量がさらに低減し、太陽電池の出力効率が向上する。   Further, in the second solar cell, the insulating Si compound thin film and the hole collecting layer are added by adding impurity ions having a negative polarity to the portion of the insulating Si compound thin film that is in contact with the hole collecting layer. A barrier to electrons is formed at the interface with the substrate, and electrons are prevented from moving to this part. As a result, the amount of carrier recombination is further reduced, and the output efficiency of the solar cell is improved.

なお、上記第２の太陽電池において、絶縁性Ｓｉ化合物薄膜への不純物イオンの添加量のピークを膜厚方向の中心から基板側にあるようにすることによって、膜中の電荷がより効率的に半導体基板に印加されるようになり、上記第１の太陽電池と同じ効果が得られる。   In the second solar cell, by making the peak of the amount of impurity ions added to the insulating Si compound thin film from the center in the film thickness direction to the substrate side, the charge in the film is more efficiently It is applied to the semiconductor substrate, and the same effect as the first solar cell is obtained.

（実施形態１）
図１は、本発明の実施形態１にかかる太陽電池の概略構成を示す断面図である。図において、１は光吸収層を形成するためのｐ型またはｎ型の単結晶半導体基板、２は電子収集層を形成するためのｎ+層、３は正孔収集層を形成するためのｐ+層、４は負電極、５は正電極である。さらに、６ａおよび６ｂはパッシベーション膜として作用するＳｉＯ2あるいはＳｉＮx等の絶縁性Ｓｉ化合物薄膜であって、本発明に従ってＢ+等の正の極性にイオン化した不純物イオンが添加されている。膜６ａおよび６ｂに示す＋の記号は、正の極性を有する不純物イオンが添加された結果、正の電荷密度が増加したことを表している。７は、この太陽電池の受光面上に形成された反射防止膜であり、例えばＳｉＯ2とＴｉＯ2の２層膜で形成されている。 (Embodiment 1)
FIG. 1 is a cross-sectional view showing a schematic configuration of a solar cell according to Embodiment 1 of the present invention. In the figure, 1 is a p-type or n-type single crystal semiconductor substrate for forming a light absorption layer, 2 is an n + layer for forming an electron collection layer, and 3 is p for forming a hole collection layer. The + layer, 4 is a negative electrode, and 5 is a positive electrode. Further, 6a and 6b are insulating Si compound thin films such as SiO 2 or SiN x acting as a passivation film, and impurity ions ionized to a positive polarity such as B + are added according to the present invention. The + sign shown in the films 6a and 6b indicates that the positive charge density has increased as a result of the addition of impurity ions having a positive polarity. Reference numeral 7 denotes an antireflection film formed on the light receiving surface of the solar cell, and is formed of, for example, a two-layer film of SiO 2 and TiO 2 .

図１に示す実施形態１では、絶縁性Ｓｉ化合物薄膜６ａ、６ｂは太陽電池の受光面（表面）上および裏面上にそれぞれ形成されているが、必ずしも両面に形成する必要は無く、いずれか一方の面上に形成すればよい。また、絶縁性Ｓｉ化合物薄膜６ａ、６ｂへの不純物の添加は、その添加量のピークが、絶縁性Ｓｉ化合物薄膜の膜厚の中間点より基板１側にあるようにされている。   In Embodiment 1 shown in FIG. 1, the insulating Si compound thin films 6a and 6b are respectively formed on the light receiving surface (front surface) and the back surface of the solar cell, but it is not always necessary to form them on both surfaces. It may be formed on the surface. The addition of impurities to the insulating Si compound thin films 6a and 6b is such that the peak of the addition amount is on the substrate 1 side from the middle point of the film thickness of the insulating Si compound thin film.

図２は、絶縁性Ｓｉ化合物薄膜６ａおよび６ｂにおける不純物イオンの分布状態を示す図である。図２の（ａ）は、表面側絶縁性Ｓｉ化合物薄膜６ａにおける不純物イオンの分布状況を、図（ｂ）は裏面側絶縁性Ｓｉ化合物薄膜６ｂにおける不純物イオンの分布状況を示している。これらの図において、横軸は絶縁性Ｓｉ化合物薄膜６ａ（図（ａ））または６ｂ（図（ｂ））の表面からの深さ位置を示し、縦軸は不純物イオン添加量を示す。   FIG. 2 is a diagram showing a distribution state of impurity ions in the insulating Si compound thin films 6a and 6b. 2A shows the distribution of impurity ions in the front-side insulating Si compound thin film 6a, and FIG. 2B shows the distribution of impurity ions in the back-side insulating Si compound thin film 6b. In these drawings, the horizontal axis indicates the depth position from the surface of the insulating Si compound thin film 6a (FIG. (A)) or 6b (FIG. (B)), and the vertical axis indicates the amount of impurity ions added.

図２から明らかなように、本実施形態の太陽電池では、絶縁性Ｓｉ化合物薄膜における不純物濃度のピークが膜厚の中心から基板１側にあるようにされている。これによって、薄膜中の電荷が半導体基板に効果的に印加されるので、不純物イオンの添加量を少なくすることが可能である。なお、図２では、不純物濃度分布が放物線状となっているが、これに限定されるものではなく、ステップ（階段）状としても良い。   As is clear from FIG. 2, in the solar cell of this embodiment, the peak of the impurity concentration in the insulating Si compound thin film is located on the substrate 1 side from the center of the film thickness. As a result, the charge in the thin film is effectively applied to the semiconductor substrate, so that the amount of impurity ions added can be reduced. In FIG. 2, the impurity concentration distribution is a parabola, but is not limited to this and may be a step (step) shape.

次に、本実施形態の太陽電池において出力効率が改善する理由を、図３を参照して説明する。図３（ａ）は、半導体基板１と絶縁性Ｓｉ化合物薄膜６ａまたは６ｂの界面におけるエネルギーバンド構造を示す図である。比較のために、絶縁性Ｓｉ化合物薄膜に不純物イオンを添加しない従来の太陽電池におけるエネルギーバンド構造を図（ｂ）に示す。   Next, the reason why the output efficiency is improved in the solar cell of this embodiment will be described with reference to FIG. FIG. 3A is a diagram showing an energy band structure at the interface between the semiconductor substrate 1 and the insulating Si compound thin film 6a or 6b. For comparison, an energy band structure in a conventional solar cell in which no impurity ions are added to the insulating Si compound thin film is shown in FIG.

図３（ａ）、（ｂ）において、ＥCは伝導帯のエネルギーレベルを、ＥFはフェルミレベルを、ＥVは価電子帯のエネルギーレベルをそれぞれ示す。図（ａ）に示すように、本実施形態における太陽電池では、絶縁性Ｓｉ化合物薄膜６ａまたは６ｂに正の極性を有する不純物イオンを添加したことによってこの膜の電荷密度が増加し、その結果、基板１との界面においてエネルギーバンドが大きく下方に曲げられる。この、下方に曲げられたエネルギーバンドは価電子帯を移動する正孔８にとって大きな障壁となり、正孔８が基板の表面近傍へ移動することを妨害する。その結果、基板１の表面近傍での正孔濃度が低下するため、キャリアをトラップする欠陥が多く存在する表面近傍でのキャリアの再結合確率が低下し、素子の出力効率が向上する。 3A and 3B, E C represents the energy level of the conduction band, E F represents the Fermi level, and E V represents the energy level of the valence band. As shown in the figure (a), in the solar cell in the present embodiment, the charge density of this film is increased by adding impurity ions having a positive polarity to the insulating Si compound thin film 6a or 6b. The energy band is greatly bent downward at the interface with the substrate 1. This downwardly bent energy band becomes a large barrier for the holes 8 moving in the valence band, and prevents the holes 8 from moving to the vicinity of the surface of the substrate. As a result, the hole concentration in the vicinity of the surface of the substrate 1 is reduced, so that the carrier recombination probability in the vicinity of the surface where many defects that trap carriers are present is reduced, and the output efficiency of the device is improved.

なお、不純物イオンを添加しない従来の絶縁性Ｓｉ化合物薄膜９を有する太陽電池では、絶縁性Ｓｉ化合物薄膜９の固定電荷密度が低いために、図３（ｂ）に示すように、膜９と基板１間の界面に形成されるエネルギーバンドの曲がりが小さく、価電子帯を移動する正孔８は容易に表面近傍に達するので、表面近傍でのキャリアの再結合確率が増加する。その結果、素子の出力効率は低下する。   Incidentally, in the solar cell having the conventional insulating Si compound thin film 9 to which no impurity ions are added, the fixed charge density of the insulating Si compound thin film 9 is low, so that the film 9 and the substrate are shown in FIG. The bending of the energy band formed at the interface between 1 is small, and the holes 8 moving in the valence band easily reach the vicinity of the surface, so that the probability of recombination of carriers near the surface increases. As a result, the output efficiency of the element decreases.

また、本実施形態では、絶縁性Ｓｉ化合物薄膜６における不純物イオン添加量のピーク位置が基板１側に来るようされており、半導体基板１に電界が効果的に印加されるようにしている。これにより、基板１と絶縁性Ｓｉ化合物薄膜６ａまたは６ｂとの界面により大きなエネルギー障壁が形成される。なお、絶縁性Ｓｉ化合物薄膜の生成過程で自然に形成される固定電荷の場合は、その電荷分布を膜厚内で制御することは不可能である。   In the present embodiment, the peak position of the impurity ion addition amount in the insulating Si compound thin film 6 is located on the substrate 1 side, so that an electric field is effectively applied to the semiconductor substrate 1. Thereby, a large energy barrier is formed at the interface between the substrate 1 and the insulating Si compound thin film 6a or 6b. In the case of a fixed charge that is naturally formed during the process of forming the insulating Si compound thin film, it is impossible to control the charge distribution within the film thickness.

以下に、図１に示す太陽電池の具体的構成例を示す。   Below, the specific structural example of the solar cell shown in FIG. 1 is shown.

基板１（光吸収層）…ｐ型Ｓｉ単結晶基板、不純物濃度１×１０14ｃｍ-3、厚さ１５０μｍ
ｎ+型層２（電子収集層）…ｎ+型Ｓｉ層、不純物濃度１×１０19ｃｍ-3、拡散深さ１μｍ
ｐ+型層３（正孔収集層）…ｐ+型Ｓｉ層、不純物濃度１×１０19ｃｍ-3、拡散深さ１μｍ
負電極４…Ａｌ、膜厚２μｍ
正電極５…Ａｌ、膜厚２μｍ
絶縁性Ｓｉ化合物薄膜６ａ／６ｂ…Ｌｉ+含有ＳｉＯ2、膜厚３０ｎｍ（６ａ）／１μｍ（６ｂ）、不純物濃度ピーク位置、基板側より５ｎｍ、ピーク位置のＬｉ+含有量（面密度）１×１０16ｃｍ-2
反射防止膜７…ＭｇＦ2／ＺｎＳ２層膜、厚さ１１０ｎｍ／５０ｎｍ Substrate 1 (light absorption layer): p-type Si single crystal substrate, impurity concentration 1 × 10 14 cm −3 , thickness 150 μm
n + type layer 2 (electron collecting layer)... n + type Si layer, impurity concentration 1 × 10 19 cm −3 , diffusion depth 1 μm
p + type layer 3 (hole collecting layer)... p + type Si layer, impurity concentration 1 × 10 19 cm −3 , diffusion depth 1 μm
Negative electrode 4 ... Al, film thickness 2 μm
Positive electrode 5 ... Al, film thickness 2 μm
Insulating Si compound thin film 6a / 6b ... Li + -containing SiO 2 , film thickness 30 nm (6a) / 1 μm (6b), impurity concentration peak position, 5 nm from substrate side, Li + content (area density) at peak position 1 × 10 16 cm -2
Antireflection film 7 ... MgF 2 / ZnS bilayer film, thickness 110 nm / 50 nm

なお、上記の事例では基板１の材料としてＳｉを挙げているが、Ｇｅ、ＳｉＧｅ、ＳｉＣ、Ｃ等の材料を用いても同様の効果を得ることができる。また、絶縁性Ｓｉ化合物薄膜６ａ、ｂに添加する不純物イオンとしてＬｉ+を挙げているが、Ｂ+、Ｐ+、Ｇａ+等、正の極性にイオン化する元素であれば良い。 In the above case, Si is used as the material of the substrate 1, but the same effect can be obtained by using a material such as Ge, SiGe, SiC, or C. Further, Li + is cited as an impurity ion added to the insulating Si compound thin films 6a and 6b, but any element that ionizes to a positive polarity such as B + , P + , and Ga + may be used.

（実施形態２）
図４は、本発明の実施形態２にかかる太陽電池の概略構成を示す断面図である。本実施形態の太陽電池は、半導体基板１の裏面電極側に形成する絶縁性Ｓｉ化合物薄膜６ｂにおいて、ｐ+層３に対応した部分１１に不純物イオンを添加しない構成を特徴とする。すなわち、本実施形態では、ｐ+層３に対応する部分１１以外の部分１０において、膜６ｂ中に実施形態１に示すものと同様に不純物イオンを添加した構成を特徴とする。なお、図４以下において、図１乃至３に示すものと同じ符号は、同一または類似の構成部材を示すのでその重複した説明は行わない。 (Embodiment 2)
FIG. 4 is a cross-sectional view showing a schematic configuration of a solar cell according to Embodiment 2 of the present invention. The solar cell of this embodiment is characterized in that no impurity ions are added to the portion 11 corresponding to the p + layer 3 in the insulating Si compound thin film 6b formed on the back electrode side of the semiconductor substrate 1. That is, this embodiment is characterized in that impurity ions are added to the film 6b in the portion 10 other than the portion 11 corresponding to the p + layer 3 in the same manner as in the first embodiment. In FIG. 4 and subsequent figures, the same reference numerals as those shown in FIG. 1 to FIG.

次に、図５を参照して本実施形態にかかる太陽電池の動作およびその効果を説明する。図５（ａ）は、絶縁性Ｓｉ化合物薄膜６ｂのｐ+層３に接する部分１１に不純物イオンを添加した場合の基板１のエネルギーバンド構造を示し、図（ｂ）は、絶縁性Ｓｉ化合物薄膜１０のｐ+層３に接する部分１１に本実施形態に従って不純物イオンを添加しない場合のエネルギーバンド構造を示す。 Next, the operation and effect of the solar cell according to this embodiment will be described with reference to FIG. FIG. 5A shows the energy band structure of the substrate 1 when impurity ions are added to the portion 11 in contact with the p + layer 3 of the insulating Si compound thin film 6b, and FIG. 5B shows the insulating Si compound thin film. 10 shows an energy band structure when no impurity ions are added to the portion 11 in contact with the p + layer 3 according to the present embodiment.

図（ａ）に示すように、絶縁性Ｓｉ化合物薄膜６ｂのｐ+層３に接する部分１１に不純物イオンを添加した場合は、形成された電荷によって、エネルギーバンドが下方に大きく曲げられ、基板１のごく表面が真性半導体に近い状態となる。真性半導体の場合、フェルミレベルＥFが伝導帯と価電子帯の中間にあり正孔と電子がほぼ同量存在できるため、キャリアの再結合確率が高くなる。これに対して、図（ｂ）に示すように、絶縁性Ｓｉ化合物薄膜６ｂのｐ+層３に接する部分１１に不純物イオンを添加しない場合は、エネルギーバンドが基板１のごく表面で大きく曲がることは無く、従ってこの部分が真性半導体に近い状態になることが回避される。この結果、正孔と電子数はバランスを欠いたままであり、キャリアの再結合確率が低減する。 As shown in FIG. 5A, when impurity ions are added to the portion 11 in contact with the p + layer 3 of the insulating Si compound thin film 6b, the energy band is largely bent downward by the formed charges, and the substrate 1 The very surface becomes close to an intrinsic semiconductor. If the intrinsic semiconductor, since the Fermi level E F can be present about the same amount of holes and electrons is in the middle of the conduction band and the valence band, recombination probability of the carriers is increased. On the other hand, as shown in FIG. 2B, when no impurity ions are added to the portion 11 in contact with the p + layer 3 of the insulating Si compound thin film 6b, the energy band is greatly bent on the very surface of the substrate 1. Therefore, it is avoided that this part becomes close to an intrinsic semiconductor. As a result, the number of holes and electrons remains unbalanced, and the recombination probability of carriers is reduced.

このように、本実施形態では、絶縁性Ｓｉ化合物薄膜６ｂの部分１１に不純物イオンを添加しないことによりキャリアの再結合確率をより低減しているので、薄膜６ｂ全体に不純物イオンを添加する実施形態１の構造の太陽電池に比べてさらにその出力効率を改善することができる。   Thus, in this embodiment, since the carrier recombination probability is further reduced by not adding impurity ions to the portion 11 of the insulating Si compound thin film 6b, the embodiment in which impurity ions are added to the entire thin film 6b. Compared with the solar cell having the structure 1, the output efficiency can be further improved.

なお、実施形態２において、絶縁性Ｓｉ化合物薄膜６ｂのｐ+層３に接する部分１１以外の部分１０におけるエネルギーバンドは、図３（ａ）に示すものと同じとなるので、ここでは記載しない。 In Embodiment 2, the energy band in the portion 10 other than the portion 11 in contact with the p + layer 3 of the insulating Si compound thin film 6b is the same as that shown in FIG.

以下に、図４に示す太陽電池の具体的構成例を示す。   Below, the specific structural example of the solar cell shown in FIG. 4 is shown.

基板１…ｐ型Ｇｅ単結晶基板、不純物濃度１×１０15ｃｍ-3、厚さ１５０μｍ
ｎ+型層２…ｎ+型Ｇｅ層、不純物濃度１×１０19ｃｍ-3、拡散深さ１μｍ
ｐ+型層３…ｐ+型Ｇｅ層、不純物濃度１×１０19ｃｍ-3、拡散深さ１μｍ
負電極４…Ａｌ、膜厚２μｍ
正電極５…Ａｌ、膜厚２μｍ
絶縁性Ｓｉ化合物薄膜６ａ／６ｂ…Ｂ+含有ＳｉＮx、膜厚３０ｎｍ（６ａ）／１μｍ（６ｂ）、Ｂ+含有量（面密度）１×１０15ｃｍ-2
領域１１…ＳｉＮx、膜厚１μｍ（ノンドープ）
反射防止膜７…ＳｉＯ2／ＴｉＯ2２層膜、厚さ１００ｎｍ／６０ｎｍ Substrate 1 ... p-type Ge single crystal substrate, impurity concentration 1 × 10 15 cm −3 , thickness 150 μm
n + -type layer 2... n + -type Ge layer, impurity concentration 1 × 10 19 cm −3 , diffusion depth 1 μm
p + -type layer 3... p + -type Ge layer, impurity concentration 1 × 10 19 cm −3 , diffusion depth 1 μm
Negative electrode 4 ... Al, film thickness 2 μm
Positive electrode 5 ... Al, film thickness 2 μm
Insulating Si compound thin film 6a / 6b ... B + containing SiN x , film thickness 30 nm (6a) / 1 μm (6b), B + content (area density) 1 × 10 15 cm −2
Region 11 ... SiN x , film thickness 1 μm (non-doped)
Antireflection film 7 ... SiO 2 / TiO 2 bilayer film, thickness 100 nm / 60 nm

なお、上記の事例では基板１の材料としてＧｅを挙げているが、Ｓｉ、ＳｉＧｅ、ＳｉＣ、Ｃ等の材料を用いても同様の効果を得ることができる。また、絶縁性Ｓｉ化合物薄膜６ａ、ｂに添加する不純物イオンとしてＢ+を挙げているが、Ｌｉ+、Ｐ+、Ｇａ+等、正の極性にイオン化する元素であれば良い。
（実施形態３）
図６は、本発明の実施形態３にかかる太陽電池の概略構成を示す断面図である。本実施形態では、図４に示した構造の太陽電池において、絶縁性Ｓｉ化合物薄膜６ｂのｐ+層３に接する部分１１に積極的に負の極性を有する不純物イオンを添加したことを特徴とする。図６において、領域１１における−の表示は、この部分に負の極性を有する不純物イオンが添加されたことを示している。 In the above case, Ge is cited as the material of the substrate 1, but the same effect can be obtained even if a material such as Si, SiGe, SiC, or C is used. Further, although B + is cited as an impurity ion added to the insulating Si compound thin films 6a and 6b, any element that ionizes to a positive polarity such as Li + , P + , and Ga + may be used.
(Embodiment 3)
FIG. 6 is a cross-sectional view illustrating a schematic configuration of a solar cell according to Embodiment 3 of the present invention. In the present embodiment, in the solar cell having the structure shown in FIG. 4, impurity ions having a negative polarity are positively added to the portion 11 in contact with the p + layer 3 of the insulating Si compound thin film 6b. . In FIG. 6, “−” in the region 11 indicates that impurity ions having negative polarity are added to this portion.

図７に、本実施形態における領域１１に接する部分のエネルギーバンド構造を示す。本実施形態の領域１１では負の極性を有するイオンが積極的に添加されているので、基板１の領域１１に接する部分に負の電界が印加され、その結果エネルギーバンドが上方に曲げられた形となる。この上方に曲げられた部分は電子に対して障壁となり、電子が欠陥の多い表面近傍に移動するのを妨げる。その結果、表面近傍の電子数が減少し、これによって図４に示した実施形態の場合よりさらにキャリアの再結合量が減少する。   In FIG. 7, the energy band structure of the part which contact | connects the area | region 11 in this embodiment is shown. In the region 11 of the present embodiment, since ions having a negative polarity are positively added, a negative electric field is applied to a portion of the substrate 1 that is in contact with the region 11, and as a result, the energy band is bent upward. It becomes. This upward bent portion serves as a barrier against electrons and prevents the electrons from moving near the surface with many defects. As a result, the number of electrons in the vicinity of the surface is reduced, thereby further reducing the amount of carrier recombination compared to the embodiment shown in FIG.

なお、本実施形態において、領域１１以外の部分１０に接する基板１の部分のエネルギーバンド構造は、図３（a）に示すものと同じとなるため、ここでは重複して説明しない。   In the present embodiment, the energy band structure of the portion of the substrate 1 that is in contact with the portion 10 other than the region 11 is the same as that shown in FIG.

以下に、図６に示す太陽電池の具体的構成例を示す。   Below, the specific structural example of the solar cell shown in FIG. 6 is shown.

基板１…ｐ型Ｓｉ単結晶基板、不純物濃度１×１０14ｃｍ-3、厚さ１５０μｍ
ｎ+型層２…ｎ+型Ｓｉ層、不純物濃度１×１０19ｃｍ-3、拡散深さ１μｍ
ｐ+型層３…ｐ+型Ｓｉ層、不純物濃度１×１０19ｃｍ-3、拡散深さ１μｍ
負電極４…Ａｌ、膜厚２μｍ
正電極５…Ａｌ、膜厚２μｍ
絶縁性Ｓｉ化合物薄膜６ａ／６ｂ…Ｇａ+含有ＳｉＮx、膜厚３０ｎｍ（６ａ）／１μ（６ｂ）、Ｇａ+含有量（面密度）１×１０15ｃｍ-2
領域１１…Ｃｕ-含有ＳｉＮｘ、膜厚１μｍ、Ｃｕ-含有量（面密度）１×１０15ｃｍ-2
反射防止膜７…ＭｇＦ2／ＺｎＳ２層膜、厚さ１１０ｎｍ／５０ｎｍ Substrate 1... P-type Si single crystal substrate, impurity concentration 1 × 10 14 cm −3 , thickness 150 μm
n + type layer 2... n + type Si layer, impurity concentration 1 × 10 19 cm −3 , diffusion depth 1 μm
p + -type layer 3... p + -type Si layer, impurity concentration 1 × 10 19 cm −3 , diffusion depth 1 μm
Negative electrode 4 ... Al, film thickness 2 μm
Positive electrode 5 ... Al, film thickness 2 μm
Insulating Si compound thin film 6a / 6b ... Ga + -containing SiN x , film thickness 30 nm (6a) / 1 μ (6b), Ga + content (area density) 1 × 10 15 cm −2
Region 11 ... Cu - containing SiNx, thickness 1 [mu] m, Cu - content (surface density) 1 × 10 15 cm -2
Antireflection film 7 ... MgF 2 / ZnS bilayer film, thickness 110 nm / 50 nm

なお、領域１１に添加する負極性のイオンとして、Ｃｕ-を挙げているが、これに限定されるものでは無く、負の極性にイオン化する元素であればよい。 Note that although Cu − is cited as the negative ion added to the region 11, the ion is not limited to this, and any element that ionizes to a negative polarity may be used.

上記実施形態１乃至３の太陽電池における絶縁性Ｓｉ化合物薄膜は、プラズマＣＶＤ装置あるいはイオン注入装置を用いて製造することができる。以下に、図８および図９を参照して本発明にかかる絶縁性Ｓｉ化合物薄膜の製造方法の一例を説明する。   The insulating Si compound thin film in the solar cells of Embodiments 1 to 3 can be manufactured using a plasma CVD apparatus or an ion implantation apparatus. Below, an example of the manufacturing method of the insulating Si compound thin film concerning this invention is demonstrated with reference to FIG. 8 and FIG.

図８は、プラズマＣＶＤ装置の概略構成を示す図である。図８では平行平板型のプラズマＣＶＤ装置を示しているが、ＥＣＲプラズマ装置を使用しても良いことは勿論である。   FIG. 8 is a diagram showing a schematic configuration of the plasma CVD apparatus. Although a parallel plate type plasma CVD apparatus is shown in FIG. 8, it goes without saying that an ECR plasma apparatus may be used.

図８において、２０ａ、２０ｂ、２０ｃ、２０ｄ、２０ｅ、２０ｆはそれぞれ原料ガスボンベであって、図示するような原料ガスが収容されている。２１ａ、２１ｂ、２１ｃ、２１ｄ、２１ｅ、２１ｆはそれぞれのボンベに対する圧力調整器、２２ａ、２２ｂ、２２ｃ、２２ｄ、２２ｅ、２２ｆは流量調整器、２３ａ、２３ｂ、２３ｃ、２３ｄ、２３ｅ、２３ｆはバルブを示す。２４は、試料室でありプラズマガス放出部を構成する電極２５と、試料２７のヒータを兼用する電極２６を有している。試料室２４はポンプ２８によって減圧される。２９は電極２５に高周波電圧を印加するための高周波電源、３０は電極２６にバイアス電圧を印加するための電源である。   In FIG. 8, reference numerals 20a, 20b, 20c, 20d, 20e, and 20f denote source gas cylinders, each of which stores source gas as shown. 21a, 21b, 21c, 21d, 21e, 21f are pressure regulators for the respective cylinders, 22a, 22b, 22c, 22d, 22e, 22f are flow regulators, 23a, 23b, 23c, 23d, 23e, 23f are valves. Show. Reference numeral 24 denotes a sample chamber having an electrode 25 constituting a plasma gas discharge portion and an electrode 26 that also serves as a heater for the sample 27. The sample chamber 24 is decompressed by a pump 28. Reference numeral 29 denotes a high frequency power source for applying a high frequency voltage to the electrode 25, and 30 denotes a power source for applying a bias voltage to the electrode 26.

まず、試料室２４内のヒータ兼電極２７上に試料を設置し室内を例えば８０Ｐａまで減圧する。その後、絶縁性Ｓｉ化合物薄膜を構成する元素（Ｓｉ、Ｏ、Ｎ、Ｈ）を含む原料ガス、および添加する不純物イオンの元となる元素（Ｐ、Ｂ、Ａｓ）を含む原料ガスを室内に導入する。絶縁性Ｓｉ化合物薄膜としてＳｉＮxを形成し、この薄膜中にＢ+イオンを不純物イオンとして添加する場合、使用するガスの種類および成分比（容積比）は、例えば、ＳｉＨ2：ＮＨ3：Ｂ2Ｈ2：Ｎ2＝４．９％：２０％：０．１％：７５％である。 First, a sample is set on the heater / electrode 27 in the sample chamber 24, and the pressure in the chamber is reduced to 80 Pa, for example. Thereafter, a source gas containing the elements (Si, O, N, H) constituting the insulating Si compound thin film and a source gas containing the elements (P, B, As) that are the source of the impurity ions to be added are introduced into the room. To do. When SiN x is formed as an insulating Si compound thin film and B + ions are added as impurity ions in this thin film, the type of gas used and the component ratio (volume ratio) are, for example, SiH 2 : NH 3 : B 2 H 2 : N 2 = 4.9%: 20%: 0.1%: 75%.

次に、ヒータによって基板温度を例えば３００℃まで上げ、場合によってはバイアス電源を用いて基板の電位を変化させる。この後、高周波電源を用いて放電し原料ガスを分解してプラズマを生成し、試料上に不純物イオンを含む絶縁性Ｓｉ化合物薄膜を形成する。高周波電源２９の周波数は例えば１３．５６ＭＨｚ、電力密度（電極面積に対して）は０．２Ｗ／ｃｍ2とした。これによって、Ｂ+イオンが添加されたＳｉＮx薄膜が試料２７上に形成される。絶縁性Ｓｉ化合物薄膜を所定の厚さに形成した後、熱処理やレーザ照射等で、添加した不純物と膜中のＳｉやＮ、Ｏ、Ｈ原子との結合を切断する。膜の生成後の熱処理は、例えば６００℃、３０分である。 Next, the substrate temperature is raised to, for example, 300 ° C. by a heater, and in some cases, the potential of the substrate is changed using a bias power source. Thereafter, discharge is performed using a high frequency power source to decompose the raw material gas to generate plasma, and an insulating Si compound thin film containing impurity ions is formed on the sample. The frequency of the high-frequency power source 29 is, for example, 13.56 MHz, and the power density (relative to the electrode area) is 0.2 W / cm 2 . As a result, a SiN x thin film to which B + ions are added is formed on the sample 27. After the insulating Si compound thin film is formed to a predetermined thickness, the bond between the added impurity and Si, N, O, and H atoms in the film is cut by heat treatment or laser irradiation. The heat treatment after film formation is, for example, 600 ° C. for 30 minutes.

上記製造過程において、不純物イオン原料を保持するボンベ２０ｆ（不純物イオンがＢ+の場合）から試料室２４に供給されるガスの流量を、流量調整器２２ｆ、バルブ２３ｆによって時間の経過を伴って制御することにより、試料２７上に形成される薄膜中に、所望の不純物イオン濃度分布を形成することができる。 In the manufacturing process, the flow rate of the gas supplied from the cylinder 20f holding the impurity ion raw material (when the impurity ions are B + ) to the sample chamber 24 is controlled over time by the flow rate regulator 22f and the valve 23f. Thus, a desired impurity ion concentration distribution can be formed in the thin film formed on the sample 27.

図９は、イオン注入装置の概略構成を示す。図において、３１はイオン源、３２は質量分析装置、３３はスリット、３４は加速器、３５は収束レンズ、３６はビーム走査用の偏向装置、３７は試料室である。この装置では、まず、絶縁性Ｓｉ化合物膜を形成した試料（例えばＳｉＮx層が形成されたｐ型半導体基板）３８を試料室３７内に載置する。この場合、絶縁性Ｓｉ化合物膜は、不純物イオンを添加することなく例えばプラズマＣＶＤ装置あるいは熱ＣＶＤ装置によって予め形成されている。次に、イオン源３１から原料ガスあるいは原料ソースのイオンビームを生成し引き出す。 FIG. 9 shows a schematic configuration of the ion implantation apparatus. In the figure, 31 is an ion source, 32 is a mass spectrometer, 33 is a slit, 34 is an accelerator, 35 is a converging lens, 36 is a deflection device for beam scanning, and 37 is a sample chamber. In this apparatus, first, a sample (for example, a p-type semiconductor substrate on which a SiN x layer is formed) 38 on which an insulating Si compound film is formed is placed in a sample chamber 37. In this case, the insulating Si compound film is formed in advance by, for example, a plasma CVD apparatus or a thermal CVD apparatus without adding impurity ions. Next, a source gas or an ion beam of the source source is generated and extracted from the ion source 31.

質量分析装置３２とスリット３３とによって、生成されたイオンビームから注入するイオンのみを分離し、加速器３４によって加速した後、収束レンズ３５によって試料表面に収束させる。この後、ビーム偏向手段３６によってイオンビームを試料面上で走査し、試料全面に均一にイオンビームを照射する。注入するイオンをＰ+イオンとした場合、加速電圧を６０ｋｅＶとすることにより、ドーズ量１×１０15ｃｍ-2の絶縁性Ｓｉ化合物薄膜が形成された。ここで、添加イオンの注入深さおよびドーズ量は加速電圧によって管理することができるため、図２に示す不純物イオン添加量ピーク位置の制御が容易に実行できる。 Only ions to be implanted from the generated ion beam are separated by the mass analyzer 32 and the slit 33, accelerated by the accelerator 34, and then converged on the sample surface by the focusing lens 35. Thereafter, the ion beam is scanned on the sample surface by the beam deflection means 36, and the entire surface of the sample is irradiated with the ion beam uniformly. When the ions to be implanted were P + ions, an insulating Si compound thin film having a dose of 1 × 10 15 cm −2 was formed by setting the acceleration voltage to 60 keV. Here, since the implantation depth and dose amount of the added ions can be managed by the acceleration voltage, the peak position of the impurity ion addition amount shown in FIG. 2 can be easily executed.

なお、上記実施形態１乃至３において、半導体基板１はｐ型あるいはｎ型のいずれでも良いが、固定電荷が正の電荷であるため基板表面におけるエネルギーバンドの曲がりによるキャリア障壁の効果は、基板がｐ型である場合の方が大きい。   In the first to third embodiments, the semiconductor substrate 1 may be either p-type or n-type. However, since the fixed charge is a positive charge, the effect of the carrier barrier due to the bending of the energy band on the substrate surface is The case of p-type is larger.

本発明の実施形態１にかかる太陽電池の概略構成を示す断面図。Sectional drawing which shows schematic structure of the solar cell concerning Embodiment 1 of this invention. 絶縁性Ｓｉ化合物薄膜における不純物イオン添加量の分布を示す図。The figure which shows distribution of the impurity ion addition amount in an insulating Si compound thin film. 図１に示す装置の動作説明のためのエネルギーバンド図。The energy band figure for operation | movement description of the apparatus shown in FIG. 本発明の実施形態２にかかる太陽電池の概略構成を示す断面図。Sectional drawing which shows schematic structure of the solar cell concerning Embodiment 2 of this invention. 図４に示す装置の動作説明のためのエネルギーバンド図。The energy band figure for operation | movement description of the apparatus shown in FIG. 本発明の実施形態３にかかる太陽電池の概略構成を示す断面図。Sectional drawing which shows schematic structure of the solar cell concerning Embodiment 3 of this invention. 図６に示す装置の動作説明のためのエネルギーバンド図。The energy band figure for operation | movement description of the apparatus shown in FIG. プラズマＣＶＤ装置の概略構成を示す図。The figure which shows schematic structure of a plasma CVD apparatus. イオン注入装置の概略構成を示す図。The figure which shows schematic structure of an ion implantation apparatus.

符号の説明Explanation of symbols

１…ｐ型またはｎ型半導体基板
２…ｎ+層
３…ｐ+層
４、５…電極
６ａ…表面側絶縁性Ｓｉ化合物薄膜
６ｂ…裏面側絶縁性Ｓｉ化合物薄膜
７…反射防止膜
DESCRIPTION OF SYMBOLS 1 ... p-type or n-type semiconductor substrate 2 ... n + layer 3 ... p + layer 4, 5 ... Electrode 6a ... Surface side insulating Si compound thin film 6b ... Back side insulating Si compound thin film 7 ... Antireflection film

Claims (4)

光吸収層を形成するｎまたはｐ型の単結晶半導体基板と、前記半導体基板の受光面または該受光面に対向する裏面の少なくとも一方上に形成した絶縁性Ｓｉ化合物薄膜とを備える太陽電池において、前記絶縁性Ｓｉ化合物薄膜には正の極性を有する不純物イオンが添加されておりその添加量のピーク位置が前記絶縁性Ｓｉ化合物薄膜の膜厚方向の中心から前記単結晶半導体基板側にあることを特徴とする、太陽電池。   In a solar cell comprising an n-type or p-type single crystal semiconductor substrate forming a light absorption layer, and an insulating Si compound thin film formed on at least one of a light receiving surface of the semiconductor substrate or a back surface facing the light receiving surface, Impurity ions having a positive polarity are added to the insulating Si compound thin film, and the peak position of the added amount is on the single crystal semiconductor substrate side from the center in the film thickness direction of the insulating Si compound thin film. A solar cell. 光吸収層を形成するｎまたはｐ型の単結晶半導体基板と、前記半導体基板の受光面とは反対側の面に接して該基板中に形成された電子収集層および正孔収集層と、前記基板の前記反対側の面上に形成された絶縁性Ｓｉ化合物薄膜と、前記絶縁性Ｓｉ化合物薄膜上にその一部を露出させかつ前記絶縁性Ｓｉ化合物薄膜を貫通して前記電子収集層または正孔収集層のいずれか一方に接するように形成された複数の電極とを備える太陽電池において、前記絶縁性Ｓｉ化合物薄膜の前記正孔収集層に接する部分以外の部分には正の極性を有する不純物イオンが添加されていることを特徴とする、太陽電池。   An n- or p-type single crystal semiconductor substrate forming a light absorption layer, an electron collection layer and a hole collection layer formed in the substrate in contact with the surface opposite to the light-receiving surface of the semiconductor substrate, An insulating Si compound thin film formed on the opposite surface of the substrate; a portion of the insulating Si compound thin film exposed on the insulating Si compound thin film; In a solar cell comprising a plurality of electrodes formed so as to be in contact with one of the hole collection layers, an impurity having a positive polarity in a portion other than the portion in contact with the hole collection layer of the insulating Si compound thin film A solar cell, wherein ions are added. 請求項２に記載の太陽電池において、前記絶縁性Ｓｉ化合物薄膜の前記正孔収集層に接する部分には、負の極性を有する不純物イオンが添加されていることを特徴とする、太陽電池。   3. The solar cell according to claim 2, wherein impurity ions having a negative polarity are added to a portion of the insulating Si compound thin film that is in contact with the hole collection layer. 請求項２または３に記載の太陽電池において、前記絶縁性Ｓｉ化合物薄膜に添加される正の極性を有する不純物イオンはその添加量のピークが膜厚方向の中心から前記半導体基板側にあることを特徴とする、太陽電池。
4. The solar cell according to claim 2, wherein impurity ions having a positive polarity added to the insulating Si compound thin film have a peak amount of addition from the center in the film thickness direction to the semiconductor substrate side. A solar cell.
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