JP2005317583A - 半導体装置およびその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 100
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- 239000010703 silicon Substances 0.000 claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 83
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 79
- 229910052914 metal silicate Inorganic materials 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 54
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- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 3
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- 239000001301 oxygen Substances 0.000 claims 1
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- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 151
- 229910052735 hafnium Inorganic materials 0.000 description 50
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 48
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 41
- 229910000449 hafnium oxide Inorganic materials 0.000 description 31
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 31
- 239000012535 impurity Substances 0.000 description 21
- 238000009826 distribution Methods 0.000 description 20
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- 238000000151 deposition Methods 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910004129 HfSiO Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
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- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
【解決手段】 シリコン基板1の主面に形成されたゲート絶縁膜2と、ゲート絶縁膜2上に形成されたゲート電極3とを有し、ゲート絶縁膜2が、酸化金属層と酸化シリコン層とから形成された金属シリケート層を含み、その金属シリケート層が、前記シリコン基板1側から前記ゲート電極3側に向けて金属およびシリコンの濃度勾配を持って形成されることを特徴とするMISFETQn、Qpを形成する。
【選択図】 図4
Description
本発明の実施の形態1では、ゲート絶縁膜の構成元素が濃度分布を有するMISFET、および、その製造技術について図1、図2および図3を用いて説明する。
本発明の実施の形態2では、ゲート絶縁膜の構成元素が濃度分布を有するMISFETを含むCMOS(Complementary Metal Oxide Semiconductor)デバイスの製造技術の一例について、図4を用いて工程順に説明する。
例えば、エッチング技術を使用してシリコン基板1の主面上に溝を形成した後、前記溝を埋め込むように、例えば、CVD(Chemical Vapor Deposition)法を使用して酸化シリコン膜を堆積し、層間絶縁膜の表面を、CMP(Chemical Mechanical Polishing)法を使用して平坦化される。
2 ゲート絶縁膜
2a 酸化シリコン層
2sh ハフニウムシリケート層
2s 酸化シリコン層
2h 酸化ハフニウム層
3 ゲート電極
4 素子分離領域
5 p型ウェル
6 n型ウェル
7 低濃度p型不純物拡散領域
8 低濃度n型不純物拡散領域
9 サイドウォール
10 高濃度p型不純物拡散領域
11 高純度n型不純物拡散領域
12 層間絶縁膜
13 プラグ
14 コンタクトホール
15 配線
k 誘電率
Qn nチャネル型MISFET
Qp pチャネル型MISFET
Claims (5)
- シリコン基板と、前記シリコン基板の主面上に形成されたゲート絶縁膜と、前記ゲート絶縁膜上に形成されたゲート電極とを有するMISFETを備えた半導体装置であって、
前記ゲート絶縁膜は、酸化シリコン層と酸化金属層とから形成された金属シリケート層を含み、
前記金属シリケート層を構成するシリコンおよび金属は、前記シリコン基板側から前記ゲート電極側に向けて濃度勾配を持っていることを特徴とする半導体装置。 - シリコン基板と、前記シリコン基板の主面上に形成されたゲート絶縁膜と、前記ゲート絶縁膜上に形成されたゲート電極とを有するMISFETを備えた半導体装置であって、
前記ゲート絶縁膜は、酸化シリコン層と酸化金属層とから形成された金属シリケート層を含み、
前記金属シリケート層を構成するシリコンの濃度は、前記ゲート電極側の領域より前記シリコン基板側の領域が高く、
前記金属シリケート層を構成する金属の濃度は、前記ゲート電極側の領域より前記シリコン基板側の領域が低く、
前記ゲート絶縁膜の酸化シリコン換算膜厚(EOT)は、1.0nm以下であることを特徴とする半導体装置。 - シリコン基板と、前記シリコン基板の主面上に形成されたゲート絶縁膜と、前記ゲート絶縁膜上に形成されたゲート電極とを有するMISFETを備えた半導体装置であって、
前記ゲート絶縁膜は、第1酸化シリコン層と酸化金属層とから形成された金属シリケート層と、第2酸化シリコン層とを含み、
前記金属シリケート層を構成するシリコンの濃度は、前記ゲート電極側の領域より前記シリコン基板側の領域が高く、
前記金属シリケート層を構成する金属の濃度は、前記ゲート電極側の領域より前記シリコン基板側の領域が低く、
前記第2酸化シリコン層は、前記シリコン基板と前記金属シリケート層との間に形成され、
前記ゲート絶縁膜の酸化シリコン換算膜厚(EOT)は、1.0nm以下であることを特徴とする半導体装置。 - シリコン基板の主面上に形成された、金属、シリコンおよび酸素からなる金属シリケート層を含むゲート絶縁膜と、前記ゲート絶縁膜上に形成されたゲート電極とを有するMISFETを備えた半導体装置の製造方法であって、
前記ゲート絶縁膜を形成する工程が、
(a)酸化シリコン層を形成する工程と、
(b)酸化金属層を形成する工程とを有し、
前記(a)工程と前記(b)工程とを交互に繰り返すことにより、前記シリコン基板側から前記ゲート電極側に向けた前記シリコンおよび前記金属の濃度勾配を持つ前記金属シリケート層を形成することを特徴とする半導体装置の製造方法。 - 請求項4記載の半導体装置の製造方法において、
前記酸化シリコン層または前記酸化金属層を原子層制御成膜(ALD)法により形成し、
前記(a)工程を繰り返す回数と、前記(b)工程とを繰り返す回数との比率を制御して、前記シリコンおよび前記金属の濃度勾配を持つ前記金属シリケート層を形成することを特徴とする半導体装置の製造方法。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006024594A (ja) * | 2004-07-06 | 2006-01-26 | Nec Corp | 半導体装置およびその製造方法 |
JP2007243049A (ja) * | 2006-03-10 | 2007-09-20 | Tokyo Electron Ltd | 半導体装置 |
JP2009260151A (ja) * | 2008-04-18 | 2009-11-05 | Tokyo Electron Ltd | 金属ドープ層の形成方法、成膜装置及び記憶媒体 |
JP2010073867A (ja) * | 2008-09-18 | 2010-04-02 | Tokyo Electron Ltd | 半導体装置及び半導体装置の製造方法 |
JP2015159295A (ja) * | 2015-03-25 | 2015-09-03 | 株式会社日立国際電気 | 半導体デバイスの製造方法および基板処理装置 |
Families Citing this family (2)
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JP2010278319A (ja) * | 2009-05-29 | 2010-12-09 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
US10629496B2 (en) * | 2017-07-31 | 2020-04-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for forming transistor gates with hafnium oxide layers and lanthanum oxide layers |
Citations (5)
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JPH11135774A (ja) * | 1997-07-24 | 1999-05-21 | Texas Instr Inc <Ti> | 高誘電率シリケート・ゲート誘電体 |
JP2001284344A (ja) * | 2000-03-30 | 2001-10-12 | Tokyo Electron Ltd | 誘電体膜の形成方法 |
JP2003158262A (ja) * | 2001-11-22 | 2003-05-30 | Toshiba Corp | 半導体装置及びその製造方法 |
WO2004008544A1 (ja) * | 2002-07-16 | 2004-01-22 | Nec Corporation | 半導体装置、その製造方法およびその製造装置 |
JP2004103688A (ja) * | 2002-09-06 | 2004-04-02 | Sony Corp | 絶縁膜の形成方法およびゲート絶縁膜 |
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JP3627106B2 (ja) | 2002-05-27 | 2005-03-09 | 株式会社高純度化学研究所 | 原子層吸着堆積法によるハフニウムシリケート薄膜の製造方法 |
KR100463633B1 (ko) | 2002-11-12 | 2004-12-29 | 주식회사 아이피에스 | 하프늄 화합물을 이용한 박막증착방법 |
JP2004311782A (ja) | 2003-04-08 | 2004-11-04 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
JP4059183B2 (ja) * | 2003-10-07 | 2008-03-12 | ソニー株式会社 | 絶縁体薄膜の製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH11135774A (ja) * | 1997-07-24 | 1999-05-21 | Texas Instr Inc <Ti> | 高誘電率シリケート・ゲート誘電体 |
JP2001284344A (ja) * | 2000-03-30 | 2001-10-12 | Tokyo Electron Ltd | 誘電体膜の形成方法 |
JP2003158262A (ja) * | 2001-11-22 | 2003-05-30 | Toshiba Corp | 半導体装置及びその製造方法 |
WO2004008544A1 (ja) * | 2002-07-16 | 2004-01-22 | Nec Corporation | 半導体装置、その製造方法およびその製造装置 |
JP2004103688A (ja) * | 2002-09-06 | 2004-04-02 | Sony Corp | 絶縁膜の形成方法およびゲート絶縁膜 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006024594A (ja) * | 2004-07-06 | 2006-01-26 | Nec Corp | 半導体装置およびその製造方法 |
JP2007243049A (ja) * | 2006-03-10 | 2007-09-20 | Tokyo Electron Ltd | 半導体装置 |
WO2007105413A1 (ja) * | 2006-03-10 | 2007-09-20 | Tokyo Electron Limited | 半導体装置 |
JP2009260151A (ja) * | 2008-04-18 | 2009-11-05 | Tokyo Electron Ltd | 金属ドープ層の形成方法、成膜装置及び記憶媒体 |
JP2010073867A (ja) * | 2008-09-18 | 2010-04-02 | Tokyo Electron Ltd | 半導体装置及び半導体装置の製造方法 |
JP2015159295A (ja) * | 2015-03-25 | 2015-09-03 | 株式会社日立国際電気 | 半導体デバイスの製造方法および基板処理装置 |
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