JP2005302880A - Immersion aligner - Google Patents

Immersion aligner Download PDF

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JP2005302880A
JP2005302880A JP2004114270A JP2004114270A JP2005302880A JP 2005302880 A JP2005302880 A JP 2005302880A JP 2004114270 A JP2004114270 A JP 2004114270A JP 2004114270 A JP2004114270 A JP 2004114270A JP 2005302880 A JP2005302880 A JP 2005302880A
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substrate
wafer
liquid
exposure apparatus
immersion liquid
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Sunao Mori
直 森
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Canon Inc
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Canon Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an aligner which reduces the residue of a liquid on the backside of a wafer. <P>SOLUTION: This aligner comprises a projection optical system of projecting the pattern of a reticle on a substrate, and the substrate is exposed via a liquid between the projection optical system and the substrate. This aligner has a chuck for retaining the substrate, and a liquid retainer which has a surface substantially flush with a surface of the substrate for retaining the liquid together with the substrate. This aligner is constituted in such a way that the hydrophobic property of a side wall at the side of the chuck of the liquid retainer is higher than that in the periphery of the side wall of the liquid retainer. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、一般に、露光装置に関するものであり、特に、ウエハやガラスプレート等の基板を投影光学系と基板との間の液体を介して回路パターンで露光するための液浸式露光装置に関するものである。   The present invention generally relates to an exposure apparatus, and more particularly to an immersion type exposure apparatus for exposing a substrate such as a wafer or a glass plate with a circuit pattern through a liquid between a projection optical system and the substrate. It is.

従来は、露光装置の微細化性能向上のためには、その露光装置の使用する露光光の波長の短波長化で対応してきた。その結果、ｇ線、ｉ線、エキシマレーザーへと使用する光源が推移してきた。また、より高解像度を達成させるために投影光学系の高ＮＡ化も図られてきた。   Conventionally, in order to improve the miniaturization performance of an exposure apparatus, the exposure light used by the exposure apparatus has been shortened in wavelength. As a result, the light source used for g-line, i-line, and excimer laser has changed. In order to achieve higher resolution, the projection optical system has also been improved in NA.

一方、光学式顕微鏡の解像力を向上される技術のひとつに、対物レンズと観察試料間の間に高屈折率液体を充填する液浸法がある（例えば、非特許文献１参照。）。   On the other hand, one technique for improving the resolution of an optical microscope is an immersion method in which a high refractive index liquid is filled between an objective lens and an observation sample (see, for example, Non-Patent Document 1).

更なる露光装置の微細化性能向上のため、この液浸法を半導体素子微細化プロセスに応用することも提案されており（例えば、特許文献１参照。）、投影光学系の最終面と共に基板の全体を液槽の中に浸す方式（例えば、特許文献２及び３参照。）や、投影光学系と基板に挟まれた空間だけに液体を流す所謂ローカルフィル方式（例えば、特許文献４参照）が提案されている。   In order to further improve the miniaturization performance of the exposure apparatus, it has also been proposed to apply this immersion method to a semiconductor element miniaturization process (see, for example, Patent Document 1), together with the final surface of the projection optical system. A method of immersing the whole in a liquid tank (for example, refer to Patent Documents 2 and 3) and a so-called local fill method (for example, refer to Patent Document 4) for flowing a liquid only in a space between the projection optical system and the substrate. Proposed.

ここで、投影光学系の最終面と共に基板の全体を液槽の中に浸す方式の露光装置について説明する。   Here, a description will be given of an exposure apparatus that immerses the entire substrate in the liquid tank together with the final surface of the projection optical system.

図８は、従来の液浸式露光装置８００の概略図である。回路パターンの書かれているレチクル８２０は、照明系８１０によって、不図示の光源からの光で照明される。照明系８１０は、光源からの光を整形し、均一な強度分布とするためのものである。レチクル８２０のパターンは投影光学系８３０で縮小され、ウエハ８４０に投影される。投影光学系８３０とウエハ８４０の間には液浸液８６０が満たされている。液浸液８６０を保持するために液浸液保持容器８７０がウエハ８４０、ウエハステージ８５０を内包されるように配置されている。液浸液は保持容器８７０に供給、回収されている。ウエハ８４０全面に渡り露光する際には、液浸液保持容器８７０自体を移動させて行う構成になっている。また、ウエハの交換方法は、ウエハ搬送用アームを液浸液保持容器８７０に挿入してウエハを回収、供給するか、液浸液保持容器８７０を図８において、下方に下げて、ウエハ８４０をウエハ８４０裏面よりピン等で押し上げて、ウエハ搬送用アームに引渡しで行うことが出来る。
米国特許第５１２１２５６号明細書 欧州特許出願公開第００２３２３１明細書 特開平０６−１２４８７３号公報 国際公開第９９／４９５０４号パンフレット Ｄ．Ｗ．Ｐｏｈｌ，Ｗ Ｄｅｎｋ＆Ｍ．Ｌａｎｚ，Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．４４６５２（１９８４） FIG. 8 is a schematic view of a conventional immersion exposure apparatus 800. A reticle 820 on which a circuit pattern is written is illuminated with light from a light source (not shown) by an illumination system 810. The illumination system 810 is for shaping the light from the light source into a uniform intensity distribution. The pattern of reticle 820 is reduced by projection optical system 830 and projected onto wafer 840. An immersion liquid 860 is filled between the projection optical system 830 and the wafer 840. In order to hold the immersion liquid 860, an immersion liquid holding container 870 is disposed so as to contain the wafer 840 and the wafer stage 850. The immersion liquid is supplied to the holding container 870 and collected. When the exposure is performed over the entire surface of the wafer 840, the immersion liquid holding container 870 itself is moved. In addition, the wafer replacement method includes inserting a wafer transfer arm into the immersion liquid holding container 870 to collect and supply the wafer, or lowering the immersion liquid holding container 870 downward in FIG. The wafer 840 can be pushed up by a pin or the like from the back surface and delivered to the wafer transfer arm.
US Pat. No. 5,121,256 European Patent Application No. 0023231 Japanese Patent Laid-Open No. 06-124873 International Publication No. 99/49504 Pamphlet D. W. Pohl, W Denk & M.M. Lanz, Appl. Phys. Lett. 44652 (1984)

しかしながら、投影光学系の最終面と共に基板の全体を液槽の中に浸す方式の液浸式露光装置ではウエハ全体が液体に浸漬されることから、ウエハの裏面に液体が付着したまま露光装置内を移動することとなり、その結果、露光装置内に液体を飛散させてしまい、金属構成物のサビ等の発生を引き起こす原因となってしまう。   However, in an immersion type exposure apparatus that immerses the entire substrate in the liquid tank along with the final surface of the projection optical system, the entire wafer is immersed in the liquid, so that the liquid remains attached to the back surface of the wafer. As a result, the liquid is scattered in the exposure apparatus, causing rust and the like of the metal component.

また、ローカルフィル方式の液浸式露光装置においても、ウエハの周辺露光の際にはウエハエッジに液体が接するため、液体がウエハ裏面に回り込む可能性が高く、同様の問題が発生し得る。   Also, in the local fill type immersion exposure apparatus, the liquid comes into contact with the wafer edge during the peripheral exposure of the wafer, so that there is a high possibility that the liquid wraps around the back surface of the wafer, and the same problem may occur.

そこで、本発明の例示的な目的は、ウエハ裏面に液体が残ることを低減することを可能とした露光装置を提供することにある。   Accordingly, an exemplary object of the present invention is to provide an exposure apparatus capable of reducing liquid remaining on the back surface of a wafer.

上記目的を達成するために、本発明の一側面としての露光装置は、レチクルのパターンを基板に投影する投影光学系を備え、前記投影光学系と前記基板との間の液体を介して、前記基板を露光する露光装置において、前記基板を保持するためのチャックと、前記基板の表面と略同じ高さの表面を持ち、該基板と共に前記液体を保持する液体保持部と、を有し、前記液体保持部の前記チャック側の側壁の疎水性は、前記液体保持部の該側壁の周辺の疎水性よりも高いことを特徴とする。   In order to achieve the above object, an exposure apparatus according to an aspect of the present invention includes a projection optical system that projects a reticle pattern onto a substrate, and the liquid is interposed between the projection optical system and the substrate. An exposure apparatus that exposes a substrate, comprising: a chuck for holding the substrate; and a liquid holding unit that has a surface substantially the same height as the surface of the substrate and holds the liquid together with the substrate, The hydrophobicity of the side wall on the chuck side of the liquid holding part is higher than the hydrophobicity around the side wall of the liquid holding part.

本発明の更なる目的又はその他の特徴は、以下、添付の図面を参照して説明される好ましい実施例等によって明らかにされるであろう。   Further objects and other features of the present invention will be made clear by the preferred embodiments described below with reference to the accompanying drawings.

従来よりも、性能の良い液浸式露光装置を提供することができる。   It is possible to provide an immersion type exposure apparatus with better performance than before.

以下に、本発明の実施の形態を添付の図面に基づいて詳細に説明する。   Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

図１に本発明の実施例１の露光装置の概略図を示す。   FIG. 1 shows a schematic diagram of an exposure apparatus according to Embodiment 1 of the present invention.

パターンの描かれている原版としてのレチクル（マスク）２０は、照明系１０によって、不図示の光源からの光で照明される。照明系１０は、光源からの光を整形し、均一な強度分布とするためのものである。レチクル２０のパターンは投影光学系３０で縮小され、基板としてのウエハ４０に投影される。投影光学系３０とウエハ４０の間の少なくとも一部分には液浸液６０が満たされている。   A reticle (mask) 20 as an original plate on which a pattern is drawn is illuminated by light from a light source (not shown) by an illumination system 10. The illumination system 10 is for shaping the light from the light source into a uniform intensity distribution. The pattern of the reticle 20 is reduced by the projection optical system 30 and projected onto a wafer 40 as a substrate. At least a portion between the projection optical system 30 and the wafer 40 is filled with the immersion liquid 60.

従来の露光装置８００は、液浸液保持容器８７０を有していたが、本実施例の露光装置は液浸液保持容器を有しておらず、ローカルフィル方式の液浸式露光装置である。   Although the conventional exposure apparatus 800 has an immersion liquid holding container 870, the exposure apparatus of this embodiment does not have an immersion liquid holding container, and is a local fill type immersion exposure apparatus. .

本実施例では、液浸液６０をウエハ４０上に保持するために投影光学系３０の下部に液浸液供給機構８０の供給口を設けている。供給機構の構造は複数のノズル、可動式ノズル、またはリング状のノズルで実現することが可能である。本実施例では複数のノズル構成を用いた。ノズルを複数にすることで、ウエハ４０の移動方向に合わせて、液浸液の供給方向を変えることが出来る。このようにすることで、投影光学系３０の下面で液浸液をウエハのウエハステージによる移動に合わせて保持することが可能であり、また、投影光学系下面と露光すべきウエハ面との間に不純物混入の無い液浸液を供給、保持することが可能となり、良好な露光像性能を実現することが出来る。   In this embodiment, in order to hold the immersion liquid 60 on the wafer 40, a supply port for the immersion liquid supply mechanism 80 is provided below the projection optical system 30. The structure of the supply mechanism can be realized by a plurality of nozzles, movable nozzles, or ring-shaped nozzles. In this embodiment, a plurality of nozzle configurations are used. By using a plurality of nozzles, the supply direction of the immersion liquid can be changed in accordance with the moving direction of the wafer 40. By doing so, it is possible to hold the immersion liquid on the lower surface of the projection optical system 30 in accordance with the movement of the wafer by the wafer stage, and between the lower surface of the projection optical system and the wafer surface to be exposed. Therefore, it is possible to supply and hold an immersion liquid free of impurities, and to realize good exposure image performance.

一方、露光が終了し露光エリアから出た余分な液浸液はウエハから外側に移動し、ウエハの表面とほぼ同一高さにその表面を配置した液浸液保持板（液体保持部）５３に移動する。この液浸液保持板５３は、ウエハと共にその表面で液浸液６０を保持するためのものである。   On the other hand, the excess immersion liquid exiting from the exposure area after the exposure is moved to the outside from the wafer, and is placed on an immersion liquid holding plate (liquid holding section) 53 having the surface arranged at almost the same height as the wafer surface. Moving. The immersion liquid holding plate 53 is for holding the immersion liquid 60 on the surface together with the wafer.

さらに液浸液保持板５３には回収口としてのスリット口（図２の５２）または複数の穴が配置され、それらを保持板５３下面よりバキュームすることで、移動してきた液浸液６０をスリット口５２より排出することが出来る。ここで、図２は、本実施例のウエハ４０と液浸液保持板５３をレチクル２０側からから見た図である。   Further, the immersion liquid holding plate 53 is provided with a slit port (52 in FIG. 2) or a plurality of holes as a recovery port, and by vacuuming them from the lower surface of the holding plate 53, the moved immersion liquid 60 is slit. It can be discharged from the mouth 52. Here, FIG. 2 is a view of the wafer 40 and the immersion liquid holding plate 53 of this embodiment as viewed from the reticle 20 side.

しかし、これだけではウエハ４０と液浸液保持板５３の僅かな隙間よりウエハ裏面への液浸液が回り込む可能性が残っている。   However, with this alone, there is a possibility that the immersion liquid flows around the wafer back surface through a slight gap between the wafer 40 and the immersion liquid holding plate 53.

図５に本実施例のウエハ４０と液浸液保持板５３の周辺を拡大した模式図を示した。図５のように、液浸液保持板５３はウエハと共にその表面で液浸液を保持している。そして、ウエハ４０と液浸液保持板５３には僅かな間隙５７が存在している。その間隙５７はウエハの加工精度と液浸液保持板の加工精度、及び、ウエハをウエハステージのウエハチャックで固定したときの歪み等で決定される。その間隙のうち、最も間隙の開く箇所はウエハノッチ部である。   FIG. 5 shows an enlarged schematic view of the periphery of the wafer 40 and the immersion liquid holding plate 53 of this embodiment. As shown in FIG. 5, the immersion liquid holding plate 53 holds the immersion liquid on the surface together with the wafer. A slight gap 57 exists between the wafer 40 and the immersion liquid holding plate 53. The gap 57 is determined by the processing accuracy of the wafer, the processing accuracy of the immersion liquid holding plate, the distortion when the wafer is fixed by the wafer chuck of the wafer stage, and the like. Among the gaps, the most notch is the wafer notch portion.

本実施例では、その間隙がウエハノッチ部で５ｍｍ、その他のウエハ周辺で２ｍｍの間隙が出来るように液浸液保持板５３を加工した。   In this embodiment, the immersion liquid holding plate 53 is processed so that the gap is 5 mm at the wafer notch and 2 mm around the other wafers.

液浸液保持板５３の材質にはステンレス、アルミ、鋳物に無電解メッキを施したものを用意した。それぞれの接触角はステンレスで７０度、アルミで７０度、無電解ＫＮメッキ面で５５度である。   As the material for the immersion liquid holding plate 53, stainless steel, aluminum, or a casting obtained by electroless plating was prepared. The contact angles are 70 degrees for stainless steel, 70 degrees for aluminum, and 55 degrees for the electroless KN plating surface.

それに対して、液浸液保持板５３のチャック５９側の壁面５６ａに、ウエハエッジ部分の疎水性よりも高い疎水処理を施した。本実施例ではフッ素コートを用い、その水の接触角は１６０度を示すものを用いた。一方、シリコンウエハの水に対する接触角は清浄なほど小さく、ＲＣＡ洗浄やＵＶ／Ｏ３洗浄を施した直後の状態では１０度未満である。しかし、実際は、ウエハを露光する際にはレジスト塗布工程を通っており、レジスト面の水の接触角はプロセス、レジスト材料で大きく変わるが数十度から百数十度の範囲にある。   In contrast, the wall surface 56a on the chuck 59 side of the immersion liquid holding plate 53 was subjected to a hydrophobic treatment higher than the hydrophobicity of the wafer edge portion. In this example, a fluorine coat was used, and the water contact angle was 160 degrees. On the other hand, the contact angle of the silicon wafer with water is so small that it is clean, and is less than 10 degrees in the state immediately after the RCA cleaning or UV / O3 cleaning. However, in reality, the wafer is exposed through a resist coating process, and the contact angle of water on the resist surface is in the range of tens to hundreds of degrees, although it varies greatly depending on the process and the resist material.

なお、図５の５６ａ部が、比較的接触角の小さい、ステンレス面、アルミ面、ＫＮメッキ面である場合、ウエハ裏面に液浸液が回り込んでしまう。この現象は、ウエハ４０側から進行して来た液浸液は、ウエハ端に来た後、チャック５９と保持板５３の隙間５７又は保持板５３表面へと進むこととなるが、壁面５６ａに疎水処理を施さなかった場合には、チャック５９と保持板５３の隙間５７における接触角と保持板５３表面における接触角とがほぼ同じであるため、チャック５９と保持板５３の隙間５７の方にも、液浸液が進入するようになるため起こると考えられる。   5 is a stainless steel surface, an aluminum surface, or a KN plating surface having a relatively small contact angle, the immersion liquid wraps around the wafer back surface. In this phenomenon, the immersion liquid that has progressed from the wafer 40 side reaches the edge of the wafer and then proceeds to the gap 57 between the chuck 59 and the holding plate 53 or the surface of the holding plate 53. When the hydrophobic treatment is not performed, the contact angle at the gap 57 between the chuck 59 and the holding plate 53 and the contact angle at the surface of the holding plate 53 are almost the same, so that the gap 57 between the chuck 59 and the holding plate 53 is closer. It is thought that this occurs because the immersion liquid enters.

これに対して、本実施例のように、ステンレス、アルミ、ＫＮメッキで製作した液浸液保持板５３の壁面５６ａに、接触角が大きくなるようにフッ素コートを施すと、ウエハ面に液浸液を展開した後に、ウエハを取り上げ、裏面を確認しても液浸液が観測されなかった。この現象は、保持板５３表面における接触角の方がチャック５９と保持板５３の隙間５７における接触角よりも小さいため、即ち、保持板５３表面の疎水性の方がチャック５９と保持板５３の隙間５７の疎水性よりも低いため、ウエハ４０側から進行して来た液浸液がウエハ端に来た後、保持板５３表面の方に優先的に液浸液が進入するようになるため起こると考えられる。   On the other hand, when a fluorine coating is applied to the wall surface 56a of the immersion liquid holding plate 53 made of stainless steel, aluminum, or KN plating as in the present embodiment so as to increase the contact angle, the wafer surface is immersed. After developing the liquid, the immersion liquid was not observed even when the wafer was picked up and the back surface was confirmed. This phenomenon is because the contact angle at the surface of the holding plate 53 is smaller than the contact angle at the gap 57 between the chuck 59 and the holding plate 53, that is, the hydrophobicity of the surface of the holding plate 53 is between the chuck 59 and the holding plate 53. Since the clearance 57 is lower than the hydrophobicity of the gap 57, the immersion liquid that has progressed from the wafer 40 side reaches the wafer end, and then the immersion liquid enters the surface of the holding plate 53 preferentially. It is thought to happen.

このように、本実施例においては、液浸液保持板５３のチャック５９側の壁面近傍の疎水性をその周辺よりも高くすることで、液浸液保持板５３の疎水性に分布を持たせることとしたため、液浸液を該隙間５７に進入させることなく、その保持板５３とチャック５９とで橋渡しできる状態に出来、ウエハ裏面に液浸液を回り込むことを阻止することが出来た。   As described above, in this embodiment, the hydrophobicity of the immersion liquid holding plate 53 is distributed by increasing the hydrophobicity in the vicinity of the wall surface on the chuck 59 side of the immersion liquid holding plate 53 higher than the periphery thereof. Therefore, the immersion liquid can be bridged by the holding plate 53 and the chuck 59 without entering the gap 57, and the immersion liquid can be prevented from entering the back surface of the wafer.

更に、図５のチャック５９の壁面５６ｂを疎水処理しておくと、該間隙を約６ｍｍまで広げても液浸液がウエハ裏面に回りこむことが無かった。なお、壁面５６ｂの疎水性を高くするには、その表面にフッ素コートやポリイミドコート等の樹脂コートを施しても良いし、その表面に凹凸の微細構造を設けることにより表面荒さを調整しても良い。さらに、ウエハチャック５９の材料として接触角の大きなアルミ（接触角：７０°）やセラミック多孔質（接触角：１３０°）等を用いることとしても良い。   Further, when the wall surface 56b of the chuck 59 in FIG. 5 is subjected to a hydrophobic treatment, the immersion liquid does not flow around the back surface of the wafer even when the gap is expanded to about 6 mm. In order to increase the hydrophobicity of the wall surface 56b, a resin coat such as a fluorine coat or a polyimide coat may be applied to the surface, or the surface roughness may be adjusted by providing an uneven microstructure on the surface. good. Furthermore, aluminum having a large contact angle (contact angle: 70 °), porous ceramic (contact angle: 130 °), or the like may be used as the material of the wafer chuck 59.

なお、以上の実施例では、液体保持板５３の壁面５６ａも、チャック５９の保持板５３側の壁面５６ｂも、その全ての面に疎水性が高くなるような加工を施したが、それらの壁面のウエハ４０に近い部分のみにその加工を施すこととしても、本実施例と同様の効果を得ることができる。   In the above embodiment, both the wall surface 56a of the liquid holding plate 53 and the wall surface 56b of the chuck 59 on the holding plate 53 side have been processed so as to be highly hydrophobic. Even if the processing is performed only on the portion close to the wafer 40, the same effect as in the present embodiment can be obtained.

以上、本実施例では、ウエハ裏面に液浸液が回り込むことを低減した液浸式露光装置を実現することが出来た。   As described above, in this embodiment, it is possible to realize an immersion type exposure apparatus that reduces the immersion liquid from flowing into the back surface of the wafer.

本実施例では、実施例１の露光装置よりも、液浸液の回収能力を向上が可能となる構成を示す。その概略図を図３に示した。なお、図３において、図１と同様の部材には同じ番号を付した。   In this embodiment, a configuration is shown in which the immersion liquid recovery capability can be improved as compared with the exposure apparatus of the first embodiment. A schematic diagram thereof is shown in FIG. In FIG. 3, the same members as those in FIG.

現在、露光装置のプロセススループット向上させるために、ウエハステージのスピードを上げる方法が取られる場合があり、その時のスピードは約１００ｍｍ／ｓｅｃと非常に高速である。また、ウエハ端でウエハ移動方向を反転させる場合には、非常に大きな加速度が生じる。   Currently, in order to improve the process throughput of the exposure apparatus, a method of increasing the speed of the wafer stage may be taken, and the speed at that time is very high at about 100 mm / sec. In addition, when the wafer moving direction is reversed at the wafer edge, a very large acceleration occurs.

そのような動作を液浸式露光装置で行った場合には、ウエハから液浸液の飛散させ、露光装置内の周辺環境に付着させ、サビ発生等の問題を引き起こすことが考えられる。   When such an operation is performed by the immersion type exposure apparatus, it is conceivable that the immersion liquid is scattered from the wafer and adheres to the surrounding environment in the exposure apparatus, causing problems such as rusting.

本実施例においては、ウエハ駆動を高速、高加速度で行った場合にも、ウエハ上の液浸液の回収を確実に行える方法を提案する。   The present embodiment proposes a method that can reliably recover the immersion liquid on the wafer even when the wafer is driven at high speed and high acceleration.

液浸液の供給は実施例１と同じ構成により行なう。液浸液の回収方法において、上記実施例１と同様に液浸液保持板５３にスリット口５２を設け、それと対向する位置に液浸液回収アーム（液浸液回収機構）６５を配置する。液浸液回収アーム６５のヘッドの材質はスポンジ形状の多孔質材料が最も好ましく、スリット形状を有した構造物でも可能である。本実施例では高密度ポリエチレンの多孔質を用いた。この多孔質材料のある面にバーキュームラインと接続できる配管を接続し、液浸液６０を吸い込めるような構成とした。この液浸液回収アーム６５をウエハ面より投影光学系３０側に一定の距離を離して配置する。また、この液浸液回収アーム６５はウエハに対して移動することが出来る。   The immersion liquid is supplied in the same configuration as in the first embodiment. In the immersion liquid recovery method, a slit port 52 is provided in the immersion liquid holding plate 53 in the same manner as in the first embodiment, and an immersion liquid recovery arm (immersion liquid recovery mechanism) 65 is disposed at a position facing it. The material of the head of the immersion liquid recovery arm 65 is most preferably a sponge-like porous material, and a structure having a slit shape is also possible. In this example, a high-density polyethylene porous was used. A pipe that can be connected to a vacuum line is connected to the surface with the porous material, and the immersion liquid 60 is sucked in. The immersion liquid recovery arm 65 is arranged at a certain distance from the wafer surface toward the projection optical system 30 side. The immersion liquid recovery arm 65 can move with respect to the wafer.

なお、実際はウエハ側が移動するので、投影光学系３０に対しては静止状態である。しかし、液浸液回収アーム６５とスリット口５２との相対位置が分かりやすいように、液浸回収アーム６５が移動しているかのように矢印で記載した。図４に記した座標Ｘ、Ｙを用いて説明すると、ウエハ４０はウエハ中心付近でＸ方向に最も移動する。そして、Ｙ方向にはウエハ上に転写される回路パターンサイズの大きさの分だけステップ移動する。ウエハの移動状態が前述したようなものであれば、液浸液回収アームは図４中でＹ方向にのみウエハに対して相対的に移動する。   Since the wafer side actually moves, the projection optical system 30 is stationary. However, the immersion recovery arm 65 is indicated by an arrow as if it is moving so that the relative position between the immersion recovery arm 65 and the slit port 52 can be easily understood. Referring to the coordinates X and Y shown in FIG. 4, the wafer 40 moves most in the X direction near the center of the wafer. Then, a step movement is made in the Y direction by the size of the circuit pattern size transferred onto the wafer. If the movement state of the wafer is as described above, the immersion liquid recovery arm moves relative to the wafer only in the Y direction in FIG.

例えばウエハが左から右に移動して、ウエハ端面で移動方向を切り返したときが最も液浸液がウエハ端面で多くなり、液浸液保持板部に液浸液を取り残していく、レジストやレジスト上反射防止膜が疎水性である場合、液浸液は玉状になって、疎水性程度とウエハステージ移動速度によってはウエハまたは液浸液保持板より離れて飛んでいってしまう。その飛んでくる液浸液を回収するのが、液浸液回収アーム６５である。液浸液を離散させるほどステージ移動速度が早くない場合や液浸液接触面の疎水性が低い場合には、実施例１に記載されているのと同様の液浸液保持板５３のスリット口５２で十分、液浸液を回収することが出来る。   For example, when the wafer moves from left to right and the direction of movement is turned back at the wafer end face, the immersion liquid increases most at the wafer end face, leaving the immersion liquid in the immersion liquid holding plate. When the upper antireflection film is hydrophobic, the immersion liquid becomes ball-shaped and flies away from the wafer or the immersion liquid holding plate depending on the degree of hydrophobicity and the moving speed of the wafer stage. The immersion liquid recovery arm 65 collects the flying immersion liquid. When the stage moving speed is not fast enough to separate the immersion liquid or when the hydrophobicity of the immersion liquid contact surface is low, the slit opening of the immersion liquid holding plate 53 similar to that described in the first embodiment is used. 52 can sufficiently recover the immersion liquid.

さらに本実施例では非常に疎水性のあるレジスト、またはレジスト上反射防止膜剤と高速ウエハステージの組み合わせでも、液浸液を周辺に撒き散らさないように回収用スリット、または複数の孔の配置をウエハ配置に対して同心円状に２箇所配置した。   Furthermore, in this embodiment, even with a very hydrophobic resist or a combination of an anti-reflective coating on the resist and a high-speed wafer stage, a collection slit or a plurality of holes are arranged so that the immersion liquid is not scattered around the periphery. Two locations were concentrically arranged with respect to the wafer arrangement.

本実施例の構成によって、最も疎水性のある表面状態としテフロン（登録商標）コートしたウエハを用いた。このウエハの水の接触角１１０度以上であった。ウエハステージ速度は１０００ｍｍ／ｓｅｃで移動させ、ステージを突き当て停止させ液浸液を飛散させ、液浸液回収を試み、液浸回収アーム先端に配置した高密度ポリエチレン製スポンジと回収用スリットで略全量回収することが出来た。   According to the configuration of this example, a Teflon (registered trademark) -coated wafer having the most hydrophobic surface state was used. The water contact angle of this wafer was 110 degrees or more. The wafer stage is moved at a speed of 1000 mm / sec, the stage is abutted and stopped, the immersion liquid is spattered, the immersion liquid is recovered, and a high-density polyethylene sponge and recovery slit arranged at the tip of the immersion recovery arm are used. The whole amount was recovered.

以上、本実施例の液浸式露光装置によれば、疎水性の高いフッ素系レジスト上反射防止膜剤をウエハに用い、現状以上の駆動速度でウエハステージを駆動させた場合であっても、ウエハ上の液浸液の回収を略確実に行うことができる。   As described above, according to the immersion type exposure apparatus of the present embodiment, even when the anti-reflection film agent on the fluorine-based resist having high hydrophobicity is used for the wafer and the wafer stage is driven at a driving speed higher than the current level, The immersion liquid on the wafer can be recovered almost reliably.

次に、前述の露光装置を利用したデバイスの製造方法の実施例を説明する。   Next, an embodiment of a device manufacturing method using the above-described exposure apparatus will be described.

図６は半導体装置（ＩＣやＬＳＩ等の半導体チップ、液晶パネルやＣＣＤ）の製造フローを示す。ステップ１（回路設計）では半導体装置の回路設計を行なう。ステップ２（マスク製作）では設計した回路パターンを形成したマスク（レチクル）を製作する。一方、ステップ３（ウエハ製造）ではシリコン等の材料を用いてウエハを製造する。ステップ４（ウエハプロセス）は前工程と呼ばれ、上記用意したマスクとウエハとを用いて、リソグラフィー技術によってウエハ上に実際の回路を形成する。次のステップ５（組み立て）は後工程と呼ばれ、ステップ４よって作成されたウエハを用いてチップ化する工程であり、アッセンブリ工程（ダイシング、ボンディング）、パッケージング工程（チップ封入）等の工程を含む。ステップ６（検査）ではステップ５で作成された半導体装置の動作確認テスト、耐久性テスト等の検査を行なう。こうした工程を経て半導体装置が完成し、これが出荷（ステップ７）される。   FIG. 6 shows a manufacturing flow of a semiconductor device (a semiconductor chip such as an IC or LSI, a liquid crystal panel or a CCD). In step 1 (circuit design), the circuit of the semiconductor device is designed. In step 2 (mask production), a mask (reticle) on which the designed circuit pattern is formed is produced. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is called a post-process, and is a process for forming a chip using the wafer created in step 4, and the assembly process (dicing, bonding), packaging process (chip encapsulation) and the like are performed. Including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device created in step 5 are performed. Through these steps, the semiconductor device is completed and shipped (step 7).

図７は上記ウエハプロセスの詳細なフローを示す。ステップ１１（酸化）ではウエハの表面を酸化させる。ステップ１２ではウエハの表面に絶縁膜を形成する。ステップ１３（電極形成）ではウエハ上に電極を蒸着によって形成する。ステップ１４（イオン打ち込み）ではウエハにイオンを打ち込む。ステップ１５（レジスト処理）ではウエハにレジスト（感材）を塗布する。ステップ１６（露光）では前述の露光装置によってマスクの回路パタ−ンの像でウエハを露光する。ステップ１７（現像）では露光したウエハを現像する。ステップ１８（エッチング）では現像したレジスト以外の部分を削り取る。ステップ１９（レジスト剥離）ではエッチングが済んで不要となったレジストを取り除く。これらステップを繰り返し行なうことによりウエハ上に回路パタ−ンが形成される。   FIG. 7 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12, an insulating film is formed on the surface of the wafer. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a resist (sensitive material) is applied to the wafer. In step 16 (exposure), the wafer is exposed with the image of the circuit pattern of the mask by the above-described exposure apparatus. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, a circuit pattern is formed on the wafer.

本実施例の製造方法を用いれば、従来は難しかった高集積度のデバイスを製造することが可能になる。   By using the manufacturing method of this embodiment, it becomes possible to manufacture a highly integrated device, which has been difficult in the past.

以上、本発明の好ましい実施例について説明したが、本発明はこれらの実施例に限定されず、その要旨の範囲内で種々の変形及び変更が可能である。   As mentioned above, although the preferable Example of this invention was described, this invention is not limited to these Examples, A various deformation | transformation and change are possible within the range of the summary.

実施例１を説明するための図であるIt is a figure for demonstrating Example 1. FIG. 実施例１を説明するための図であるIt is a figure for demonstrating Example 1. FIG. 実施例２を説明するための図であるIt is a figure for demonstrating Example 2. 実施例２を説明するための図であるIt is a figure for demonstrating Example 2. 液浸液保持領域での疎水性分布状態を表す図であるIt is a figure showing the hydrophobic distribution state in an immersion liquid holding | maintenance area | region. デバイスの製造フローを示す図であるIt is a figure which shows the manufacturing flow of a device. 図６のウエハプロセスを示す図であるIt is a figure which shows the wafer process of FIG. 比較例を説明するための図であるIt is a figure for demonstrating a comparative example.

符号の説明Explanation of symbols

２０ レチクル
４０ ウエハ
３０ 投影光学系
５０ ウエハステージ
５９ ウエハチャック
６０ 液浸液
８７０ 液浸液保持容器
８０ 液浸液供給口
５２ 液浸液回収口
５３ 液浸液保持板
５６ 疎水処理面
６５ 液浸液回収アーム DESCRIPTION OF SYMBOLS 20 Reticle 40 Wafer 30 Projection optical system 50 Wafer stage 59 Wafer chuck 60 Immersion liquid 870 Immersion liquid holding container 80 Immersion liquid supply port 52 Immersion liquid collection port 53 Immersion liquid holding plate 56 Hydrophobic processing surface 65 Immersion liquid Recovery arm

Claims (9)

レチクルのパターンを基板に投影する投影光学系を備え、前記投影光学系と前記基板との間の液体を介して、前記基板を露光する露光装置において、
前記基板を保持するためのチャックと、
前記基板の表面と略同じ高さの表面を持ち、該基板と共に前記液体を保持する液体保持部と、を有し、
前記液体保持部の前記チャック側の側壁の疎水性は、前記液体保持部の該側壁の周辺の疎水性よりも高いことを特徴とする露光装置。 In an exposure apparatus that includes a projection optical system that projects a pattern of a reticle onto a substrate, and that exposes the substrate via a liquid between the projection optical system and the substrate,
A chuck for holding the substrate;
A liquid holding part that has a surface substantially the same height as the surface of the substrate and holds the liquid together with the substrate;
An exposure apparatus according to claim 1, wherein the hydrophobicity of the side wall on the chuck side of the liquid holding unit is higher than the hydrophobicity around the side wall of the liquid holding unit. レチクルのパターンを基板に投影する投影光学系を備え、前記投影光学系と前記基板との間の液体を介して、前記基板を露光する露光装置において、
前記基板を保持するためのチャックと、
前記基板の表面と略同じ高さの表面を持ち、該基板と共に前記液体を保持する液体保持部と、を有し、
前記液体保持部の前記チャック側の側壁の疎水性は、前記基板の表面の疎水性よりも高いことを特徴とする露光装置。 In an exposure apparatus that includes a projection optical system that projects a pattern of a reticle onto a substrate, and that exposes the substrate via a liquid between the projection optical system and the substrate,
A chuck for holding the substrate;
A liquid holding part that has a surface substantially the same height as the surface of the substrate and holds the liquid together with the substrate;
An exposure apparatus characterized in that the hydrophobicity of the side wall on the chuck side of the liquid holding part is higher than the hydrophobicity of the surface of the substrate. 前記チャックの側壁の疎水性は、前記基板の表面の疎水性よりも高いことを特徴とする請求項１又は２記載の露光装置。   3. The exposure apparatus according to claim 1, wherein the hydrophobicity of the side wall of the chuck is higher than the hydrophobicity of the surface of the substrate. 前記チャックの材料の疎水性は、前記基板の表面の疎水性よりも高いことを特徴とする請求項３記載の露光装置。   4. The exposure apparatus according to claim 3, wherein the hydrophobicity of the chuck material is higher than the hydrophobicity of the surface of the substrate. レチクルのパターンを基板に投影する投影光学系を備え、前記投影光学系と前記基板との間の液体を介して、前記基板を露光する露光装置において、
前記投影光学系と前記基板との間の前記液体を、前記基板側から回収する回収口を有することを特徴とする露光装置。 In an exposure apparatus that includes a projection optical system that projects a pattern of a reticle onto a substrate, and that exposes the substrate via a liquid between the projection optical system and the substrate,
An exposure apparatus comprising a recovery port for recovering the liquid between the projection optical system and the substrate from the substrate side. 前記基板の表面と略同じ高さの表面を持ち、該基板と共に前記液体を保持するための液体保持部を有し、
前記回収口は、前記保持部に配置されていることを特徴とする請求項５記載の露光装置。 A surface having substantially the same height as the surface of the substrate, and a liquid holding portion for holding the liquid together with the substrate;
6. The exposure apparatus according to claim 5, wherein the recovery port is disposed in the holding part. 前記回収口は、前記基板を保持するチャックの周辺に配置されていることを特徴とする請求項５記載の露光装置。   6. The exposure apparatus according to claim 5, wherein the recovery port is disposed around a chuck that holds the substrate. 前記投影光学系側から前記投影光学系と前記基板との間へ前記液体を供給する供給口を有することを特徴とする請求項５記載の露光装置。   6. The exposure apparatus according to claim 5, further comprising a supply port for supplying the liquid from the projection optical system side to the projection optical system and the substrate. 請求項１〜８のいずれか一項記載の露光装置を用いて基板を露光する段階と、該露光された基板を現像する段階と、を有することを特徴とするデバイス製造方法。   A device manufacturing method comprising: exposing a substrate using the exposure apparatus according to claim 1; and developing the exposed substrate.
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