JP2005294827A - 無鉛はんだを用い反応バリア層を有するフリップ・チップ用相互接続 - Google Patents
無鉛はんだを用い反応バリア層を有するフリップ・チップ用相互接続 Download PDFInfo
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Abstract
【解決手段】 超小型電子デバイス・チップをパッケージにフリップ・チップ接続するのに適した相互接続構造は、2、3、または4層ボール制限構成物を有する。これは、接着/反応バリア層を含み、すず含有無鉛はんだの成分と反応するはんだ濡れ性の層を有し、そのためはんだ付けの間にはんだ可能層は全て使い尽くされる可能性があるが、はんだ付けの間に無鉛はんだと接触して配置された後にバリア層は残っている。はんだ濡れ性の層の上に、1つ以上の無鉛はんだボールを選択的に配置する。無鉛はんだボールは、主要成分としてのすずと1つ以上の合金化成分とを含む。
【選択図】 図1
Description
(1)ウエハの上面上に堆積される第1の層は、BLMの接着層であり、下にある基板に対する接着を与える。また、この層は、拡散/反応バリア層として機能して、シリコン・ウエハおよびそのウエハ・プロセス後半部(BEOL:back-end-of-line)の配線層がその上の相互接続構造と相互作用を起こすことを防止する。これは、薄い層であり、一般にポリマ、酸化物、または窒化物材料から成るウエハ・パッシベーション層の表面上に、通常はスパッタリングまたは蒸着によって堆積される。接着層の候補は、少数の例を挙げると、Cr、TiW、Ta、W、Ti、TiN、TaN、Zr等であり、厚さは約数百から数千オングストロームである。
(2)BLMの次の層は、反応バリア(reaction barrier)層であり、溶融はんだによってはんだ付けする(solderable)ことができるが、ゆっくり反応して(限定された反応)、全部が使い果たされることなく、多くのリフロー・サイクル(または再加工サイクル)を可能とする。この層は通常、厚さが約数千オングストロームから数ミクロンである。
(3)BLMの最後の層は、濡れ性の層であり、容易なはんだ濡れ性(solder wettability)およびはんだとの高速反応を可能とする。典型的な例は銅であり、厚さは通常、2〜300から数千オングストロームの範囲であり、スパッタリング、無電解または電解めっきにより堆積される。一部の特別なチップ接合用途では、Cuの厚さは数ミクロンの範囲である場合がある。
(4)BLM構造の上部に形成されるC4バンプについては、少数の例を挙げると、蒸着、めっき、ステンシル印刷、ペースト・スクリーニングおよびはんだ噴射、および溶融はんだ注入を含む多数の製造プロセスが開発されている。
(5)バンプの製造後、はんだバンプをリフローする。リフローは、通常、不活性または還元雰囲気(H2/N2)において、ベルト炉または真空炉またはオーブン内で行われる。リフローの間、はんだと反応バリア層との間に、金属間化合物が形成する。これらの化合物は、信頼性の高いはんだ接合部のための良好な機械的完全性を与えるように機能する。
(6)ダイシング、分類および選択動作によって、ウエハをダイシングしてチップにする。高品質のチップ(仕様に合致するもの)を選択して、一列に並べ、適切なフラックスまたは無フラックス(fluxless)接合を用いて、チップ・キャリアにフリップ接合する。
本発明によれば、好適な接着層14はCr、TiW、またはTiであり、好ましくはスパッタリングまたは蒸着のいずれかを行い、厚さは約100から3,000オングストロームであると好ましい。接着層14の厚さは、良好な接着および良好なバリア特性が維持される限り、大きく異なるものとすることも可能である。パターニングしたBLM構造11を形成する際の最終ステップとして、ブランケットTiWを堆積し、続けてエッチングする場合は、膜の厚さを最小限に抑え、適切な性能と両立させなければならない。代替的な接着層は、厚さが約100から3,000オングストロームのCrまたはTiである。
この例では、第1の層は、CrまたはTiWであると好ましい。第2の層は、Ti、Zr、V、またはそれらの合金(または化合物)であると好ましい。第3の層は、好ましくは、Cu、CO、Ni、Pd、Pt、またはそれらの合金である。第4の層は、AuまたはSnとすることができる。
この例では、第1の層は、好ましくはTiであり、接着層および反応バリア層の双方として機能する。第2の層は、Cu、CO、Ni、Pd、Pt、Sn、またはそれらの合金から成る群から選択される。
第1の層は、好ましくはTiまたはその合金であり、Tiが接着および反応バリア材料の双方として機能する。この層の上の第2の層は、Cu、CO、Ni、Pd、Sn、およびPtから成る群から選択される。
3層BLM構造は、基板上に堆積したCr接着層、Cr層上のNi反応バリア層、およびCr層上に堆積しためっき用のCuシード層を含む。Cu層上に、SnまたはSnAg合金の無鉛はんだを堆積する。リフローを行うと、上述のように、Cu層は、結果として生じるはんだボールに溶解して、はんだと合金を形成する。はんだは、好ましくは無鉛であり、Cuがはんだに溶解し元のはんだがそれぞれ純粋なSnおよび二元Sn−Agである場合に、二元Sn−Cu合金または三元Sn−Ag−Cu合金が形成される。
4層構造は、基板上に堆積するためのCr接着層、Cr層上のCu層、Cu層上のNi反応バリア層、Ni層の上部のCu層を含む。めっきした純粋Snまたは二元Sn−Agはんだのリフローの際、Cuの上層が無鉛はんだに溶解して、二元Sn−Cu合金または三元Sn−Ag−Cu合金をそれぞれ形成する。
11:ボール制限冶金(BLM)
12:集積回路(IC)デバイス
14:接着/拡散バリア層
16:はんだ反応バリア層
18:上層
20:無鉛はんだボール
38:第4の層
Claims (30)
- 超小型電子デバイス・チップをチップ・キャリアにフリップ・チップ接続するのに適した相互接続構造において、3層ボール制限冶金であって、
ウエハまたは基板上に堆積するための接着層と、
Ti、TiN、Ta、TaN、Zr、ZrN、V、およびNiから成る群から選択された材料のはんだ反応バリア層と、
はんだ濡れ性の層と、
を有することを特徴とする、3層ボール制限冶金。 - 前記接着層が、Cr、TiW、TiN、TaN、Ti、Ta、Zr、およびZrNから成る群から選択された材料で形成されることを特徴とする、請求項1に記載の相互接続構造。
- 前記はんだ濡れ性の層が、Cu、Pd、Co、Ni、Au、Pt、およびSnから成る群から選択された材料で形成されることを特徴とする、請求項1に記載の相互接続構造。
- 前記第3の層にAuまたはSnが用いられていない場合、AuおよびSnから成る群から選択された材料で形成される任意選択的な第4の層を更に有することを特徴とする、請求項1に記載の相互接続構造。
- 前記接着層がCrおよびTiWの1つから成り、前記反応バリアがTiから成り、前記はんだ濡れ性の層が、Cu、Co、Ni、Pd、およびPtの1つから成ることを特徴とする、請求項1に記載の相互接続構造。
- 超小型電子デバイス・チップをパッケージにフリップ・チップ接続するのに適した相互接続構造であって、
接着および反応バリア層の双方として機能する接着/反応バリア層とはんだ濡れ性の層とを有する2層ボール制限構成物であって、前記接着/バリア層が超小型電子デバイスと前記はんだ濡れ性の層との間に配置されるためのものであり、前記はんだ濡れ性の層がすず含有無鉛はんだの成分と反応する金属で形成され、このため、前記はんだ濡れ性の層がはんだ付けの間に使い果たされ、前記接着/反応バリア層が、はんだ付けの間に前記無鉛はんだと接触して配置された後に残っている、2層ボール制限構成物と、
前記はんだ濡れ性の層の上に選択的に配置された1つ以上の無鉛はんだボールであって、主要成分としてのすずと1つ以上の合金成分とを有する、無鉛はんだボールと、
を有することを特徴とする、相互接続構造。 - 前記接着/反応バリア層が、Ti、TiN、TiW、Ta、TaN、Zr、ZrN、およびVから成る群から選択された材料で構成されることを特徴とする、請求項6に記載の相互接続構造。
- 前記はんだ濡れ性の層が、Cu、Ni、Co、Pd、Pt、Au、およびSnから成る群から選択された材料で構成されることを特徴とする、請求項6に記載の相互接続構造。
- 前記第2の層がAuまたはSnで形成されていない場合、AuまたはSnから構成された任意選択的な第3の層を更に有することを特徴とする、請求項6に記載の相互接続構造。
- 前記無鉛はんだボールが、アルファ粒子放出を実質的に防ぐ材料で構成されることを特徴とする、請求項6に記載の相互接続構造。
- 前記合金成分が、Sn、Bi、Cu、Ag、Zn、およびSbから成る群から選択されることを特徴とする、請求項6に記載の相互接続構造。
- 接着/反応バリア層がTiを含み、前記はんだ付け可能層が、Cu、Co、Ni、Pd、およびPtの1つを含むことを特徴とする、請求項6に記載の相互接続構造。
- 超小型電子デバイス・チップをパッケージにフリップ・チップ接続するのに適した相互接続構造であって、
接着層と、前記接着層上の反応バリア層と、はんだ濡れ性の層とを有する3層ボール制限構成物であって、前記接着/反応バリア層が超小型電子デバイスと前記はんだ濡れ性の層との間にあり、前記はんだ濡れ性の層が、すず含有無鉛はんだの成分と十分に反応する組成のものであり、前記反応バリア層が、はんだ接合プロセスにおいてはんだと接触して配置された後にはんだと実質的にほとんど反応しない、3層ボール制限構成物と、
前記はんだ濡れ性の層の上に選択的に配置された1つ以上の無鉛はんだボールであって、主要成分としてのすずと、Cu、Zn、Ag、Bi、およびSbから成る群から選択された1つ以上の合金成分とを有し、これによって、前記無鉛はんだボールが、アルファ粒子放出およびその結果として引き起こされるソフト論理エラーを実質的に防ぐ、無鉛はんだボールと、
を有することを特徴とする、相互接続構造。 - 超小型電子デバイス・チップをパッケージにフリップ・チップ接続するのに適した相互接続構造を形成するための方法であって、
基板上にボール制限構成物を形成するステップと、
前記ボール制限構成物上にレジスト・パターンを形成するステップと、
前記レジストをエッチ・マスクとして用いることによって前記ボール制限構成物をエッチングするステップと、
残ったボール制限構成物から前記レジストを除去するステップと、
前記ボール制限構成物上にはんだを堆積するステップと、
を有することを特徴とする、方法。 - 前記はんだが実質的に無鉛であることを特徴とする、請求項14に記載の方法。
- 前記ボール制限構成物が、
前記基板上に接着層を堆積し、
前記接着層上に反応バリア層を堆積し、
前記バリア層上にはんだ濡れ性の層を堆積すること、
によって形成されることを特徴とする、請求項14に記載の方法。 - 前記接着層が、スパッタリング、めっき、または蒸着によって堆積されることを特徴とする、請求項16に記載の方法。
- 前記ボール制限構成物が、
前記基板上に接着/反応バリア層を堆積し、
前記バリア層上にはんだ濡れ性の層を堆積すること、
によって形成されることを特徴とする、請求項14に記載の方法。 - 摂氏150から250度で30から60分間、前記ボール制限構成物にアニーリングを行うステップを更に有することを特徴とする、請求項14に記載の方法。
- 超小型電子デバイス・チップをチップ・キャリアにフリップ・チップ接続するのに適した相互接続構造を形成するための方法であって、
前記チップ・キャリアとして機能するウエハまたは基板上に接着層を堆積するステップと、
前記接着層上にはんだ反応バリア層を堆積するステップと、
前記反応バリア層上にはんだ濡れ性の層を堆積するステップと、
前記はんだ濡れ性の層上に無鉛はんだを堆積するステップと、
前記はんだをリフローして前記はんだ濡れ性の層が前記無鉛はんだ内に拡散するようにするステップと、
を有することを特徴とする、方法。 - 前記はんだ濡れ性の層がCuを含み、前記Cuが前記はんだ内に拡散することを特徴とする、請求項20に記載の方法。
- 前記無鉛はんだが実質的に純粋なSnであり、リフローの間に二元Sn−Cu無鉛はんだが形成されることを特徴とする、請求項21に記載の方法。
- 前記無鉛はんだが実質的に二元Sn−Agであり、リフローの間に三元Sn−Ag−Cu無鉛はんだが形成されることを特徴とする、請求項21に記載の方法。
- 共晶はんだが形成されることを特徴とする、請求項33に記載の方法。
- 前記拡散によって、前記はんだ内の元素の数が少なくとも1元素だけ増えることを特徴とする、請求項20に記載の方法。
- 摂氏150度〜250度で30分〜60分間アニーリングを行うステップを更に有することを特徴とする、請求項20に記載の方法。
- 超小型電子デバイス・チップをチップ・キャリアにフリップ・チップ接続するのに適した相互接続構造を形成するための方法であって、
前記チップ・キャリアとして機能するウエハまたは基板上に接着層を堆積するステップと、
前記接着層上に、はんだ濡れ性のはんだ反応バリア層を堆積するステップと、
前記はんだ濡れ性の層上に無鉛はんだを堆積するステップと、
前記はんだをリフローして前記はんだ濡れ性の層が前記無鉛はんだ内に拡散するようにするステップと、
を有することを特徴とする、方法。 - 基板上に配置するためのCr接着層と、Cuシード層と、前記Cu層上のNi反応バリア層とを有することを特徴とする、3層ボール制限構造。
- 無鉛はんだ構成物であって、はんだのリフローの間に前記Ni層が前記はんだと反応する無鉛はんだ構成物を更に有することを特徴とする、請求項28に記載の構造。
- 基板上に堆積するためのCr接着層と、前記Cr層上のCu層と、前記Cu層上のNi反応バリア層と、前記Ni層上のCuの層とを有し、前記Cuの層が無鉛はんだに溶解して、めっきした純粋Snまたは二元Sn−Agはんだから二元Sn−Cu合金または三元Sn−Ag−Cu合金を形成することを特徴とする、3層ボール制限構造。
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Also Published As
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US20080203585A1 (en) | 2008-08-28 |
US20080206979A1 (en) | 2008-08-28 |
TW200540935A (en) | 2005-12-16 |
US8026613B2 (en) | 2011-09-27 |
US20050224966A1 (en) | 2005-10-13 |
US7410833B2 (en) | 2008-08-12 |
US20120012642A1 (en) | 2012-01-19 |
CN1681099B (zh) | 2010-04-28 |
JP4195886B2 (ja) | 2008-12-17 |
US20080202792A1 (en) | 2008-08-28 |
CN1681099A (zh) | 2005-10-12 |
US7923849B2 (en) | 2011-04-12 |
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