JP2005252032A - 面発光レーザ素子およびそれを用いたレーザモジュール - Google Patents
面発光レーザ素子およびそれを用いたレーザモジュール Download PDFInfo
- Publication number
- JP2005252032A JP2005252032A JP2004061258A JP2004061258A JP2005252032A JP 2005252032 A JP2005252032 A JP 2005252032A JP 2004061258 A JP2004061258 A JP 2004061258A JP 2004061258 A JP2004061258 A JP 2004061258A JP 2005252032 A JP2005252032 A JP 2005252032A
- Authority
- JP
- Japan
- Prior art keywords
- emitting laser
- laser element
- surface emitting
- ghz
- element according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0658—Self-pulsating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1221—Detuning between Bragg wavelength and gain maximum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2213—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on polyimide or resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
- H01S5/32366—(In)GaAs with small amount of N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】下部多層膜反射鏡12と上部多層膜反射鏡16とによって共振器を形成し、下部多層膜反射鏡12と上部多層膜反射鏡16との間に活性層32を配置した面発光レーザ素子10において、活性層32の障壁層にカーボンを変調ドーピングし、微分利得を増大して共振器内の緩和振動周波数が面発光レーザ素子10から出力されるレーザ光を変調する光通信周波数を超えるように設定する。
【選択図】 図1
Description
まず、実施の形態1にかかる面発光レーザ素子について説明する。図1は、この発明の実施の形態1である面発光レーザ素子を斜めからみた断面図である。図1において、この面発光レーザ素子10は、(001)面のn−GaAs基板11上に、n−GaAsバッファ層(n=1×1018cm-3)21、下部多層膜反射鏡12、活性領域13、電流狭窄層15を含む上部多層膜反射鏡16、コンタクト層17が順次積層され、n−GaAs基板11の下部にはn側電極21が設けられ、コンタクト層17の上部にはリング状のp側電極18およびこのp側電極18の電極引き出し用の電極パッド20が設けられた構造を有する。活性領域13、上部多層膜反射鏡16およびp側電極18は、その周囲が除去された円柱状のメサポストを形成し、メサポストの側壁および下部多層膜反射鏡12の上部はシリコン窒化膜19によって覆われ、メサポストの周囲はこのシリコン窒化膜19を介したポリイミド22で埋められている。
の電極パッド20を形成する。この電極パッド20の面積は、3000平方μmである。その後、n−GaAs基板11を200μm程度に研磨した後、その表面にAuGeNi/Au電極を蒸着し、最後に窒素雰囲気中で約400℃にアニールする。
fextc=(τL 2/16|Ce|2)・(K・fr2+1/τe)2・((1+α2)/α4)
… (1)
である。ここで、τLは共振器の光閉じ込め時間、Ceはレーザ出射端での戻り光との結合効率、KはKファクタ、frは緩和振動周波数、τeは電子寿命、αはスペクトル線幅増大係数である。
fr∝(a(dg/dn)・(I−Ith))1/2 … (2)
である。したがって、緩和振動周波数frを大きくするには、微分利得(dg/dn)と電流注入量(I−Ith)とを大きくすればよい。電流注入量(I−Ith)は面発光レーザ素子に注入される動的なものであることから、微分利得(dg/dn)を大きくすればよいことがわかる。
つぎに、この発明の実施の形態2について説明する。上述した実施の形態1では、緩和振動周波数frを増大させる手段として障壁層41a〜41dに変調ドーピングを施したが、この実施の形態2では、デチューニングを行って微分利得を増大させ、これによって緩和振動周波数frを増大させるようにしている。
11 n−GaAs基板
12 下部多層膜反射鏡
13 活性領域
14 選択酸化層
15 電流狭窄層
16 上部多層膜反射鏡
17 コンタクト層
18 p側電極
19 シリコン窒化膜
20 電極パッド
21 n−GaAsバッファ層
22 ポリイミド
31,33 クラッド層
32 活性層
41a〜41d 障壁層
42a〜42c 量子井戸層
λg 利得ピーク波長
λlasing 発振波長
L11,L12 利得曲線
Claims (24)
- 下部多層膜反射鏡と上部多層膜反射鏡とによって共振器を形成し、該下部多層膜反射鏡と該上部多層膜反射鏡との間に活性層を配置した面発光レーザ素子において、
前記共振器内のバイアス点における緩和振動周波数が、当該面発光レーザ素子から出力されるレーザ光を変調する光通信周波数を超えて設定されることを特徴とする面発光レーザ素子。 - 前記緩和振動周波数の設定は、微分利得を増大させることによって設定することを特徴とする請求項1に記載の面発光レーザ素子。
- 前記活性層を形成する障壁層にp型不純物をドーピングすることを特徴とする請求項1または2に記載の面発光レーザ素子。
- 前記ドーピングの濃度は、1×1018cm-3〜2×1019cm-3であることを特徴とする請求項3に記載の面発光レーザ素子。
- 前記p型不純物は、少なくともC、Be、Zn、Mgからなる群のいずれか一つを含むことを特徴とする請求項3または4に記載の面発光レーザ素子。
- 下部多層膜反射鏡と上部多層膜反射鏡とによって共振器を形成し、該下部多層膜反射鏡と該上部多層膜反射鏡との間に活性層を配置した面発光レーザ素子において、
室温時の利得ピーク波長から動作時の発振波長へのデチューニングを短波長側に向けて行うことを特徴とする請求項1〜5のいずれか一つに記載の面発光レーザ素子。 - 前記デチューニングの値は、少なくともデチューニング後における微分利得が増大する値であることを特徴とする請求項6に記載の面発光レーザ素子。
- 前記デチューニングの値は、波長をエネルギーに換算したエネルギーシフト値であり、20meV以下の値であることを特徴とする請求項6または7に記載の面発光レーザ素子。
- 発振周波数は、300〜1600nmであることを特徴とする請求項1〜8のいずれか一つに記載の面発光レーザ素子。
- AlとAsとを少なくとも含む電流狭窄層の一部を酸化した選択酸化層を有し、注入電流を狭窄することを特徴とする請求項1〜9のいずれか一つに記載の面発光レーザ素子。
- 前記活性層を形成する井戸層または障壁層は、Gax1In1-x1Ny1Asy2Sb1-y1-y2(0≦x1,y1,y2≦1)、Alx2Gax3In1-x2-x3As(0≦x2,x3≦1)、Tlx4Gax5In1-x4-x5Asy3P1-y3(0≦x4,x5,y3≦1)のいずれかを用いることを特徴とする請求項1〜10のいずれか一つに記載の面発光レーザ素子。
- 前記活性層は、量子井戸構造、量子細線構造、量子ドット構造のいずれかであることを特徴とする請求項1〜11のいずれか一つに記載の面発光レーザ素子。
- 前記上部多層膜反射鏡および前記下部多層膜反射鏡は、双方が半導体多層膜あるいは双方が誘電体多層膜、または一方が半導体多層膜であり他方が誘電体多層膜であることを特徴とする請求項1〜12のいずれか一つに記載の面発光レーザ素子。
- GaAs基板上に前記上部多層膜反射鏡、前記活性層、前記下部多層膜反射鏡が積層され、上部多層膜反射鏡および前記下部多層膜反射鏡は、Alx6Ga1-x6As(0≦x6<1)とAlx7Ga1-x7As(0<x7≦1,x6<x7)とを1対とする複数対の多層膜であることを特徴とする請求項1〜13のいずれか一つに記載の面発光レーザ素子。
- 相対強度雑音の値が0〜2GHzの前記光通信周波数領域において−115dB/Hzとなる臨界戻り光量が−30dB以上であり、前記バイアス点における緩和振動周波数が5GHz以上であることを特徴とする請求項1〜14のいずれか一つに記載の面発光レーザ素子。
- 相対強度雑音の値が0〜8GHzの前記光通信周波数領域において−115dB/Hzとなる臨界戻り光量が−20dB以上であり、前記バイアス点における緩和振動周波数が10GHz以上であり、発振波長が1300nm帯であることを特徴とする請求項1〜14のいずれか一つに記載の面発光レーザ素子。
- 相対強度雑音の値が0〜8GHzの前記光通信周波数領域において−115dB/Hzとなる臨界戻り光量が−30dB以上であり、前記バイアス点における緩和振動周波数が10GHz以上であり、発振波長が1550nm帯であることを特徴とする請求項1〜14のいずれか一つに記載の面発光レーザ素子。
- 請求項1〜17に記載の面発光レーザ素子を備え、該面発光レーザ素子から出射されたレーザ光を、光ファイバを介して外部に出力することを特徴とするレーザモジュール。
- CANパッケージを備えたことを特徴とする請求項18に記載のレーザモジュール。
- 光ファイバレセプタクルを備えたことを特徴とする請求項18に記載のレーザモジュール。
- 光ファイバピグテイルを備えたことを特徴とする請求項18に記載のレーザモジュール。
- 相対強度雑音の値が0〜2GHzの前記光通信周波数領域において−115dB/Hzとなる臨界戻り光量が−24dB以上であり、前記バイアス点における緩和振動周波数が5GHz以上であることを特徴とする請求項18〜21のいずれか一つに記載のレーザモジュール。
- 相対強度雑音の値が0〜8GHzの前記光通信周波数領域において−115dB/Hzとなる臨界戻り光量が−14dB以上であり、前記バイアス点における緩和振動周波数が10GHz以上であり、発振波長が1300nm帯であることを特徴とする請求項18〜21のいずれか一つに記載のレーザモジュール。
- 相対強度雑音の値が0〜8GHzの前記光通信周波数領域において−115dB/Hzとなる臨界戻り光量が−24dB以上であり、前記バイアス点における緩和振動周波数が10GHz以上であり、発振波長が1550nm帯であることを特徴とする請求項18〜21のいずれか一つに記載のレーザモジュール。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004061258A JP2005252032A (ja) | 2004-03-04 | 2004-03-04 | 面発光レーザ素子およびそれを用いたレーザモジュール |
PCT/JP2005/003612 WO2005086301A1 (ja) | 2004-03-04 | 2005-03-03 | 面発光レーザ素子およびそれを用いたレーザモジュール |
EP05719916A EP1729384A4 (en) | 2004-03-04 | 2005-03-03 | SURFACE-EMITTING LASER ELEMENT AND LASER MODULE USING THE SAME |
US11/515,017 US20070030874A1 (en) | 2004-03-04 | 2006-09-05 | Surface-emitting laser element and laser module using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004061258A JP2005252032A (ja) | 2004-03-04 | 2004-03-04 | 面発光レーザ素子およびそれを用いたレーザモジュール |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005252032A true JP2005252032A (ja) | 2005-09-15 |
Family
ID=34918053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004061258A Pending JP2005252032A (ja) | 2004-03-04 | 2004-03-04 | 面発光レーザ素子およびそれを用いたレーザモジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070030874A1 (ja) |
EP (1) | EP1729384A4 (ja) |
JP (1) | JP2005252032A (ja) |
WO (1) | WO2005086301A1 (ja) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007103576A (ja) * | 2005-10-03 | 2007-04-19 | Furukawa Electric Co Ltd:The | 面発光レーザモジュール |
JP2007194561A (ja) * | 2006-01-23 | 2007-08-02 | Nec Corp | 面発光レーザ |
JP2007311632A (ja) * | 2006-05-19 | 2007-11-29 | Furukawa Electric Co Ltd:The | 面発光レーザ素子 |
US7577176B2 (en) | 2007-03-01 | 2009-08-18 | The Furukawa Electric Co., Ltd. | Surface emitting laser device |
EP2166374A2 (en) | 2008-09-22 | 2010-03-24 | Yamatake Corporation | Reflective photoelectric sensor and object detecting method |
JP2011071330A (ja) * | 2009-09-25 | 2011-04-07 | Sony Corp | 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法 |
WO2011078196A1 (en) | 2009-12-21 | 2011-06-30 | Ricoh Company, Ltd. | Optical device capable of minimizing output variation due to feedback light, optical scanning apparatus, and image forming apparatus |
EP2366549A2 (en) | 2010-03-18 | 2011-09-21 | Ricoh Company, Ltd. | Surface-emitting laser module, optical scanner device, and image forming apparatus |
CN102248806A (zh) * | 2010-04-28 | 2011-11-23 | 株式会社理光 | 光源单元、光学扫描装置和成像设备 |
US8144742B2 (en) | 2007-03-01 | 2012-03-27 | Furukawa Electric Co., Ltd. | Surface emitting laser device |
JP2012156562A (ja) * | 2012-05-21 | 2012-08-16 | Nec Corp | 面発光レーザ |
JP2014086642A (ja) * | 2012-10-25 | 2014-05-12 | Furukawa Electric Co Ltd:The | 光モジュール |
US8810866B2 (en) | 2010-12-28 | 2014-08-19 | Ricoh Company, Ltd. | Optical device, optical scanning apparatus, and image forming apparatus |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8031754B2 (en) * | 2008-04-24 | 2011-10-04 | The Furukawa Electric Co., Ltd. | Surface emitting laser element, surface emitting laser element array, method of fabricating a surface emitting laser element |
JP2010251698A (ja) | 2009-03-27 | 2010-11-04 | Furukawa Electric Co Ltd:The | 面発光レーザ素子、面発光レーザアレイ素子、面発光レーザ装置、光源装置、および光モジュール |
WO2013110004A1 (en) * | 2012-01-20 | 2013-07-25 | The Regents Of The University Of California | Short cavity surface emitting laser with double high contrast gratings with and without airgap |
US9082637B2 (en) | 2012-08-17 | 2015-07-14 | The University Of Connecticut | Optoelectronic integrated circuit |
KR102276422B1 (ko) * | 2014-07-18 | 2021-07-12 | 삼성전자주식회사 | 투과형 고흡수 광 변조기 및 그 제조방법 |
CN105337166B (zh) * | 2015-11-30 | 2019-01-11 | 武汉电信器件有限公司 | 一种高速垂直腔面发射激光器的分子束外延生长方法 |
CN112393692B (zh) * | 2019-08-14 | 2023-04-28 | Oppo广东移动通信有限公司 | 激光投射模组、图像采集模组、深度相机及电子设备 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3010817B2 (ja) * | 1991-08-22 | 2000-02-21 | 株式会社日立製作所 | 半導体光素子 |
JP4362873B2 (ja) * | 1998-05-11 | 2009-11-11 | ソニー株式会社 | 半導体レーザおよび光ディスク装置 |
US6368890B1 (en) * | 1999-05-05 | 2002-04-09 | Mitel Semiconductor Ab | Top contact VCSEL with monitor |
JP2000332341A (ja) * | 1999-05-24 | 2000-11-30 | Sony Corp | 半導体レーザ |
JP2001059923A (ja) * | 1999-06-16 | 2001-03-06 | Seiko Epson Corp | 光モジュール及びその製造方法、半導体装置並びに光伝達装置 |
US7004644B1 (en) * | 1999-06-29 | 2006-02-28 | Finisar Corporation | Hermetic chip-scale package for photonic devices |
US6653662B2 (en) * | 2000-11-01 | 2003-11-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device, method for fabricating the same, and method for driving the same |
US6803604B2 (en) * | 2001-03-13 | 2004-10-12 | Ricoh Company, Ltd. | Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device |
JP2002359434A (ja) * | 2001-03-29 | 2002-12-13 | Ricoh Co Ltd | 面発光レーザ素子および該面発光レーザ素子を用いた面発光レーザアレイ |
US7075954B2 (en) * | 2001-05-29 | 2006-07-11 | Nl Nanosemiconductor Gmbh | Intelligent wavelength division multiplexing systems based on arrays of wavelength tunable lasers and wavelength tunable resonant photodetectors |
JP3981257B2 (ja) * | 2001-10-23 | 2007-09-26 | ローム株式会社 | 面発光型半導体レーザ |
US6859481B2 (en) * | 2002-07-16 | 2005-02-22 | Applied Optoelectronics, Inc. | Optically-pumped multiple-quantum well active region with improved distribution of optical pumping power |
KR101168283B1 (ko) * | 2005-08-09 | 2012-07-30 | 삼성전자주식회사 | 고출력 수직외부공진형 표면발광 레이저 |
-
2004
- 2004-03-04 JP JP2004061258A patent/JP2005252032A/ja active Pending
-
2005
- 2005-03-03 WO PCT/JP2005/003612 patent/WO2005086301A1/ja not_active Application Discontinuation
- 2005-03-03 EP EP05719916A patent/EP1729384A4/en not_active Withdrawn
-
2006
- 2006-09-05 US US11/515,017 patent/US20070030874A1/en not_active Abandoned
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007103576A (ja) * | 2005-10-03 | 2007-04-19 | Furukawa Electric Co Ltd:The | 面発光レーザモジュール |
JP2007194561A (ja) * | 2006-01-23 | 2007-08-02 | Nec Corp | 面発光レーザ |
JP2007311632A (ja) * | 2006-05-19 | 2007-11-29 | Furukawa Electric Co Ltd:The | 面発光レーザ素子 |
US8144742B2 (en) | 2007-03-01 | 2012-03-27 | Furukawa Electric Co., Ltd. | Surface emitting laser device |
US7577176B2 (en) | 2007-03-01 | 2009-08-18 | The Furukawa Electric Co., Ltd. | Surface emitting laser device |
EP2166374A2 (en) | 2008-09-22 | 2010-03-24 | Yamatake Corporation | Reflective photoelectric sensor and object detecting method |
JP2010071926A (ja) * | 2008-09-22 | 2010-04-02 | Yamatake Corp | 反射型光電センサおよび物体検出方法 |
JP2011071330A (ja) * | 2009-09-25 | 2011-04-07 | Sony Corp | 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法 |
WO2011078196A1 (en) | 2009-12-21 | 2011-06-30 | Ricoh Company, Ltd. | Optical device capable of minimizing output variation due to feedback light, optical scanning apparatus, and image forming apparatus |
US8803936B2 (en) | 2009-12-21 | 2014-08-12 | Ricoh Company, Ltd. | Optical device capable of minimizing output variation due to feedback light, optical scanning apparatus, and image forming apparatus |
EP2366549A2 (en) | 2010-03-18 | 2011-09-21 | Ricoh Company, Ltd. | Surface-emitting laser module, optical scanner device, and image forming apparatus |
US8916418B2 (en) | 2010-03-18 | 2014-12-23 | Ricoh Company, Ltd. | Surface-emitting laser module, optical scanner device, and image forming apparatus |
US9276377B2 (en) | 2010-03-18 | 2016-03-01 | Ricoh Company, Ltd. | Surface-emitting laser module, optical scanner device, and image forming apparatus |
US9831633B2 (en) | 2010-03-18 | 2017-11-28 | Ricoh Company, Ltd. | Surface-emitting laser module, optical scanner device, and image forming apparatus |
CN102248806A (zh) * | 2010-04-28 | 2011-11-23 | 株式会社理光 | 光源单元、光学扫描装置和成像设备 |
US8976216B2 (en) | 2010-04-28 | 2015-03-10 | Ricoh Company, Ltd. | Light source unit, optical scanning device, and image forming apparatus |
US8810866B2 (en) | 2010-12-28 | 2014-08-19 | Ricoh Company, Ltd. | Optical device, optical scanning apparatus, and image forming apparatus |
JP2012156562A (ja) * | 2012-05-21 | 2012-08-16 | Nec Corp | 面発光レーザ |
JP2014086642A (ja) * | 2012-10-25 | 2014-05-12 | Furukawa Electric Co Ltd:The | 光モジュール |
Also Published As
Publication number | Publication date |
---|---|
US20070030874A1 (en) | 2007-02-08 |
WO2005086301A1 (ja) | 2005-09-15 |
EP1729384A8 (en) | 2007-03-21 |
EP1729384A1 (en) | 2006-12-06 |
EP1729384A4 (en) | 2008-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Kuznetsov et al. | Design and characteristics of high-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/beams | |
JP2005252032A (ja) | 面発光レーザ素子およびそれを用いたレーザモジュール | |
JP4621393B2 (ja) | 表面発光型半導体レーザ及び表面発光型半導体レーザの製造方法 | |
EP1208622B1 (en) | Coupled cavity anti-guided vertical cavity surface emitting laser (vcsel) | |
JP5027010B2 (ja) | 面発光レーザ素子 | |
WO2002075868A2 (en) | Vertical cavity surface emitting laser | |
JP2003133640A (ja) | 面発光半導体レーザ素子 | |
JP2004063657A (ja) | 面発光レーザおよび面発光レーザアレイおよび光送信モジュールおよび光送受信モジュールおよび光通信システム | |
JP2009081230A (ja) | 面発光レーザ | |
US7907653B2 (en) | Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array | |
US7154927B2 (en) | Surface emitting semiconductor laser and communication system using the same | |
Ledentsov et al. | Ultrafast nanophotonic devices for optical interconnects | |
US20070290191A1 (en) | Resonant cavity optoelectronic device with suppressed parasitic modes | |
CN111900622B (zh) | 带有钝化的光学匹配垂直腔面发射激光器(vcsel) | |
US10283937B2 (en) | Optoelectronic device with enhanced lateral leakage of high order transverse optical modes into alloy-intermixed regions and method of making same | |
KR100404043B1 (ko) | 수직으로 집적화된 고출력 면발광 반도체 레이저 장치 및그 제조 방법 | |
US11362486B2 (en) | High speed high bandwidth vertical-cavity surface-emitting laser with controlled overshoot | |
JP5137658B2 (ja) | 長波長帯域面発光レーザ素子 | |
EP3800751A1 (en) | High speed high bandwidth vertical-cavity surface-emitting laser with controlled overshoot | |
JP2004031863A (ja) | 面発光型半導体レーザ素子 | |
JP2006019470A (ja) | 面発光半導体レーザおよび光モジュール | |
CN112310810A (zh) | 一种半导体激光发射器 | |
Iga | Vertical Cavity Surface Emitting Laser | |
Al-Omari et al. | High-speed 980nm VCSELs with integrated distributed losses for mode control | |
JP6012399B2 (ja) | 光モジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061201 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070424 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070625 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070717 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070918 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20071107 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20071221 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090312 |