JP2005142323A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP2005142323A JP2005142323A JP2003376666A JP2003376666A JP2005142323A JP 2005142323 A JP2005142323 A JP 2005142323A JP 2003376666 A JP2003376666 A JP 2003376666A JP 2003376666 A JP2003376666 A JP 2003376666A JP 2005142323 A JP2005142323 A JP 2005142323A
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- Prior art keywords
- holding plate
- semiconductor module
- heat radiating
- radiating member
- heat
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】パワー半導体素子5が上面に配設された複数の絶縁基板4と、各絶縁基板4が上面に配設された複数の放熱部材3とを備えている。各放熱部材3は、保持板1の嵌入孔1aに嵌入される。その嵌入状態において、パワー半導体素子5は、ケース2により囲繞されている。そして、保持板1は金属製であり、取付孔1bが穿設されている。
【選択図】図2
Description
本実施の形態に係る半導体モジュールの上面を示す平面図を、図1に示す。また、図1のA−A断面の断面図を、図2に示す。
本実施の形態に係る半導体モジュールの断面図を図5に示す。
本実施の形態に係る半導体モジュールの断面図を図6に示す。
Claims (5)
- 上面に半導体素子が配設された複数の絶縁基板と、
上面に各前記絶縁基板が配設さえた複数の放熱部材と、
各前記放熱部材が嵌入すべき複数の嵌入孔を有する保持板と、
前記保持板の外周縁部で支持されており、前記保持板の前記嵌入孔に前記放熱部材が嵌入されている状態において、前記半導体素子を囲繞するケースとを、備えており、
前記保持板は金属製であり、取付孔が穿設されている、
ことを特徴とする半導体モジュール。 - 前記嵌入孔間に存する前記保持板の断面形状は、平板形状である、
ことを特徴とする請求項1に記載の半導体モジュール。 - 前記放熱部材の側面は、末広がりとなる階段形状であり、
前記放熱部材の前記階段形状の階段部の上面が、前記保持板の下面で係り止めされている、
ことを特徴とする請求項1に記載の半導体モジュール。 - 前記放熱部材が前記保持板に嵌入されている状態において、
前記保持板の上面は、前記放熱部材の上面以下の位置に存する、
ことを特徴とする請求項1に記載の半導体モジュール。 - 前記放熱部材が前記保持板の前記嵌入孔に嵌入されている状態において、
前記放熱部材の下面は、前記保持板の下面よりも突出している、
ことを特徴とする請求項1に記載の半導体モジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003376666A JP2005142323A (ja) | 2003-11-06 | 2003-11-06 | 半導体モジュール |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003376666A JP2005142323A (ja) | 2003-11-06 | 2003-11-06 | 半導体モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005142323A true JP2005142323A (ja) | 2005-06-02 |
JP2005142323A5 JP2005142323A5 (ja) | 2006-02-02 |
Family
ID=34687638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003376666A Pending JP2005142323A (ja) | 2003-11-06 | 2003-11-06 | 半導体モジュール |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2005142323A (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008288379A (ja) * | 2007-05-17 | 2008-11-27 | Toshiba Corp | 半導体パッケージ |
JP2010108955A (ja) * | 2008-10-28 | 2010-05-13 | Fuji Electric Systems Co Ltd | 半導体装置およびその製造方法 |
JP2013191806A (ja) * | 2012-03-15 | 2013-09-26 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
JP2014033119A (ja) * | 2012-08-06 | 2014-02-20 | Mitsubishi Electric Corp | 半導体装置 |
WO2014175062A1 (ja) * | 2013-04-24 | 2014-10-30 | 富士電機株式会社 | パワー半導体モジュールおよびその製造方法、電力変換器 |
WO2015111202A1 (ja) * | 2014-01-27 | 2015-07-30 | 株式会社日立製作所 | 半導体モジュール |
CN106057743A (zh) * | 2015-04-16 | 2016-10-26 | 三菱电机株式会社 | 功率半导体模块 |
DE102012218304B4 (de) * | 2012-03-22 | 2018-11-08 | Mitsubishi Electric Corporation | Leistungshalbleitervorrichtungsmodul |
JP2021027137A (ja) * | 2019-08-02 | 2021-02-22 | 株式会社東芝 | 半導体装置 |
JPWO2021144980A1 (ja) * | 2020-01-17 | 2021-07-22 | ||
EP3989267A3 (en) * | 2020-10-23 | 2022-10-26 | SwissSEM Technologies AG | Power module and process for manufacturing the same |
-
2003
- 2003-11-06 JP JP2003376666A patent/JP2005142323A/ja active Pending
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008288379A (ja) * | 2007-05-17 | 2008-11-27 | Toshiba Corp | 半導体パッケージ |
JP2010108955A (ja) * | 2008-10-28 | 2010-05-13 | Fuji Electric Systems Co Ltd | 半導体装置およびその製造方法 |
JP2013191806A (ja) * | 2012-03-15 | 2013-09-26 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
DE102012218304B4 (de) * | 2012-03-22 | 2018-11-08 | Mitsubishi Electric Corporation | Leistungshalbleitervorrichtungsmodul |
JP2014033119A (ja) * | 2012-08-06 | 2014-02-20 | Mitsubishi Electric Corp | 半導体装置 |
CN105229785A (zh) * | 2013-04-24 | 2016-01-06 | 富士电机株式会社 | 功率半导体模块及其制造方法、电力变换器 |
US9373555B2 (en) | 2013-04-24 | 2016-06-21 | Fuji Electric Co., Ltd. | Power semiconductor module, method for manufacturing the same, and power converter |
JP6004094B2 (ja) * | 2013-04-24 | 2016-10-05 | 富士電機株式会社 | パワー半導体モジュールおよびその製造方法、電力変換器 |
WO2014175062A1 (ja) * | 2013-04-24 | 2014-10-30 | 富士電機株式会社 | パワー半導体モジュールおよびその製造方法、電力変換器 |
WO2015111202A1 (ja) * | 2014-01-27 | 2015-07-30 | 株式会社日立製作所 | 半導体モジュール |
DE112014005694B4 (de) | 2014-01-27 | 2020-07-30 | Hitachi, Ltd. | Halbleitermodul |
JP6093455B2 (ja) * | 2014-01-27 | 2017-03-08 | 株式会社日立製作所 | 半導体モジュール |
JPWO2015111202A1 (ja) * | 2014-01-27 | 2017-03-23 | 株式会社日立製作所 | 半導体モジュール |
US9754855B2 (en) | 2014-01-27 | 2017-09-05 | Hitachi, Ltd. | Semiconductor module having an embedded metal heat dissipation plate |
JP2016207706A (ja) * | 2015-04-16 | 2016-12-08 | 三菱電機株式会社 | パワー半導体モジュール |
CN106057743B (zh) * | 2015-04-16 | 2019-04-26 | 三菱电机株式会社 | 功率半导体模块 |
CN106057743A (zh) * | 2015-04-16 | 2016-10-26 | 三菱电机株式会社 | 功率半导体模块 |
JP2021027137A (ja) * | 2019-08-02 | 2021-02-22 | 株式会社東芝 | 半導体装置 |
JP7247053B2 (ja) | 2019-08-02 | 2023-03-28 | 株式会社東芝 | 半導体装置 |
JPWO2021144980A1 (ja) * | 2020-01-17 | 2021-07-22 | ||
WO2021144980A1 (ja) * | 2020-01-17 | 2021-07-22 | 三菱電機株式会社 | パワーモジュールおよび電力変換装置 |
EP3989267A3 (en) * | 2020-10-23 | 2022-10-26 | SwissSEM Technologies AG | Power module and process for manufacturing the same |
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