JP2005093712A - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
- Publication number
- JP2005093712A JP2005093712A JP2003324884A JP2003324884A JP2005093712A JP 2005093712 A JP2005093712 A JP 2005093712A JP 2003324884 A JP2003324884 A JP 2003324884A JP 2003324884 A JP2003324884 A JP 2003324884A JP 2005093712 A JP2005093712 A JP 2005093712A
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- Prior art keywords
- light
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- light emitting
- led chip
- emitting device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 claims abstract description 32
- 229920005989 resin Polymers 0.000 claims abstract description 28
- 239000011347 resin Substances 0.000 claims abstract description 28
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 54
- 239000003795 chemical substances by application Substances 0.000 claims description 39
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 8
- 150000002910 rare earth metals Chemical class 0.000 claims description 7
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- 150000004645 aluminates Chemical class 0.000 claims description 3
- 150000001925 cycloalkenes Chemical class 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920002050 silicone resin Polymers 0.000 claims description 3
- -1 rare earth activated orthosilicate Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000002270 dispersing agent Substances 0.000 abstract 1
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
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- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052605 nesosilicate Inorganic materials 0.000 description 1
- 150000004762 orthosilicates Chemical class 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】基板1の上部に設けられた擂鉢状の凹部を有する反射枠2の底面にLEDチップ4を載設し、蛍光体7と20〜80wt%の拡散剤8とを光透過性樹脂に混入した波長変換部材9を凹部に充填してLEDチップ4を封止した。
【選択図】 図1
Description
2 反射枠
3 第一の回路パターン
4 LEDチップ
5 ボンディングワイヤ
6 第二の回路パターン
7 蛍光体
8 拡散剤
9 波長変換部材
10 内側面
11 第一のリードフレーム
12 第二のリードフレーム
13 樹脂レンズ
p1〜p7 蛍光体
d1〜d3 拡散剤
Claims (6)
- 少なくとも一つの発光ダイオードチップを、光透過性樹脂に少なくとも1種類の蛍光体と拡散剤とを混入した波長変換部材で封止した発光ダイオードであって、前記波長変換部材には20〜80wt%の前記拡散剤が混入されていることを特徴とする半導体発光装置。
- 前記発光ダイオードチップは、紫外光を発光することを特徴とする請求項1に記載の半導体発光装置。
- 前記発光ダイオードチップは、青色光または緑色光を発光することを特徴とする請求項1に記載の半導体発光装置。
- 前記発光ダイオードチップは、青色光を発光る発光ダイオードチップと緑色光を発光する発光ダイオードチップとで構成されていることを特徴とする請求項1に記載の半導体発光装置。
- 前記蛍光体は、希土類を付活したアルミン酸塩、希土類を付活したチオ没食子酸塩および希土類を付活したオルトケイ酸塩のなかから選ばれた1つからなることを特徴とする請求項1から4の何れか1項に記載の半導体発光装置。
- 前記光透過性樹脂は、エポキシ樹脂、シリコーン樹脂、アクリル系樹脂およびシクロオレフィン系樹脂のなかから選ばれた1つからなることを特徴とする請求項1から5の何れか1項に記載の半導体発光装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003324884A JP2005093712A (ja) | 2003-09-17 | 2003-09-17 | 半導体発光装置 |
CNA2004100465931A CN1599087A (zh) | 2003-09-17 | 2004-06-11 | 半导体发光装置 |
US10/901,991 US20050057144A1 (en) | 2003-09-17 | 2004-07-30 | Semiconductor light-emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003324884A JP2005093712A (ja) | 2003-09-17 | 2003-09-17 | 半導体発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005093712A true JP2005093712A (ja) | 2005-04-07 |
JP2005093712A5 JP2005093712A5 (ja) | 2006-10-05 |
Family
ID=34270081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003324884A Pending JP2005093712A (ja) | 2003-09-17 | 2003-09-17 | 半導体発光装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20050057144A1 (ja) |
JP (1) | JP2005093712A (ja) |
CN (1) | CN1599087A (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006308859A (ja) * | 2005-04-28 | 2006-11-09 | Mitsubishi Chemicals Corp | 表示装置 |
JP2006324486A (ja) * | 2005-05-19 | 2006-11-30 | Mitsubishi Electric Corp | 半導体発光装置 |
WO2008015833A1 (fr) * | 2006-08-02 | 2008-02-07 | Tokai Kogaku Co., Ltd | Dispositif électroluminescent fluorescent |
JP2009094351A (ja) * | 2007-10-10 | 2009-04-30 | Nichia Corp | 発光装置およびその製造方法 |
US8766298B2 (en) | 2006-09-01 | 2014-07-01 | Cree, Inc. | Encapsulant profile for light emitting diodes |
JP2015062226A (ja) * | 2013-09-23 | 2015-04-02 | 弘凱光電(深セン)有限公司 | 側面漏光防止用の発光ダイオードパッケージ構造及びその製造方法 |
US9768364B2 (en) | 2014-05-21 | 2017-09-19 | Nichia Corporation | Light emitting device and method of manufacturing the same |
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CN100373646C (zh) * | 2005-03-25 | 2008-03-05 | 李洲科技股份有限公司 | 多波长发光二极体构造及其制程 |
KR100666189B1 (ko) | 2005-06-30 | 2007-01-09 | 서울반도체 주식회사 | 발광 소자 |
KR100665222B1 (ko) * | 2005-07-26 | 2007-01-09 | 삼성전기주식회사 | 확산재료를 이용한 엘이디 패키지 및 그 제조 방법 |
US7329907B2 (en) * | 2005-08-12 | 2008-02-12 | Avago Technologies, Ecbu Ip Pte Ltd | Phosphor-converted LED devices having improved light distribution uniformity |
JP4945106B2 (ja) * | 2005-09-08 | 2012-06-06 | スタンレー電気株式会社 | 半導体発光装置 |
KR100691440B1 (ko) * | 2005-11-15 | 2007-03-09 | 삼성전기주식회사 | Led 패키지 |
JP4417906B2 (ja) * | 2005-12-16 | 2010-02-17 | 株式会社東芝 | 発光装置及びその製造方法 |
JP2007273562A (ja) * | 2006-03-30 | 2007-10-18 | Toshiba Corp | 半導体発光装置 |
CN100418242C (zh) * | 2006-05-17 | 2008-09-10 | 广州南科集成电子有限公司 | Led制造方法 |
CN101449391B (zh) * | 2006-05-30 | 2011-02-23 | 株式会社藤仓 | 发光元件安装用基板、光源、照明装置、显示装置、交通信号机及发光元件安装用基板的制造方法 |
RU2425432C2 (ru) * | 2006-06-14 | 2011-07-27 | Конинклейке Филипс Электроникс Н.В. | Осветительное устройство |
TWI418054B (zh) * | 2006-08-08 | 2013-12-01 | Lg Electronics Inc | 發光裝置封裝與製造此封裝之方法 |
JP4961978B2 (ja) * | 2006-11-30 | 2012-06-27 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
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-
2003
- 2003-09-17 JP JP2003324884A patent/JP2005093712A/ja active Pending
-
2004
- 2004-06-11 CN CNA2004100465931A patent/CN1599087A/zh active Pending
- 2004-07-30 US US10/901,991 patent/US20050057144A1/en not_active Abandoned
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006308859A (ja) * | 2005-04-28 | 2006-11-09 | Mitsubishi Chemicals Corp | 表示装置 |
JP2006324486A (ja) * | 2005-05-19 | 2006-11-30 | Mitsubishi Electric Corp | 半導体発光装置 |
JP4727297B2 (ja) * | 2005-05-19 | 2011-07-20 | 三菱電機株式会社 | 半導体発光装置 |
WO2008015833A1 (fr) * | 2006-08-02 | 2008-02-07 | Tokai Kogaku Co., Ltd | Dispositif électroluminescent fluorescent |
JP2008041739A (ja) * | 2006-08-02 | 2008-02-21 | Tokai Kogaku Kk | 蛍光発光装置 |
US8766298B2 (en) | 2006-09-01 | 2014-07-01 | Cree, Inc. | Encapsulant profile for light emitting diodes |
JP2009094351A (ja) * | 2007-10-10 | 2009-04-30 | Nichia Corp | 発光装置およびその製造方法 |
JP2015062226A (ja) * | 2013-09-23 | 2015-04-02 | 弘凱光電(深セン)有限公司 | 側面漏光防止用の発光ダイオードパッケージ構造及びその製造方法 |
US9236541B2 (en) | 2013-09-23 | 2016-01-12 | Brightek Optoelectronic (Shenzhen) Co., Ltd. | LED package structures for preventing lateral light leakage and method of manufacturing the same |
US9768364B2 (en) | 2014-05-21 | 2017-09-19 | Nichia Corporation | Light emitting device and method of manufacturing the same |
US10763405B2 (en) | 2014-05-21 | 2020-09-01 | Nichia Corporation | Light emitting device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
CN1599087A (zh) | 2005-03-23 |
US20050057144A1 (en) | 2005-03-17 |
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