JP2005039256A - 電気化学セルおよびその製造方法 - Google Patents
電気化学セルおよびその製造方法 Download PDFInfo
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- JP2005039256A JP2005039256A JP2004191069A JP2004191069A JP2005039256A JP 2005039256 A JP2005039256 A JP 2005039256A JP 2004191069 A JP2004191069 A JP 2004191069A JP 2004191069 A JP2004191069 A JP 2004191069A JP 2005039256 A JP2005039256 A JP 2005039256A
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- electrochemical cell
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- frame member
- conductive terminal
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- Prior art date
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Abstract
【解決策】 樹脂材料からなり箱状に形成されたベース部材11と、金属材料からなりベース部材11の内部から外部に貫通固定される導電性端子15と、金属材料からなりベース部材11に固定される枠部材12と、枠部材12に溶接されるカバー部材13で電気化学セルを構成した。
【選択図】 図1
Description
セパレータと、セパレータの上下面に配置された一対の電極と、セパレータ及び一対の電極に含浸された電解質を収容する容器からなる電気化学セルであって、容器が、底部と底部の外周に沿って底部の上面に設けられた側部とを一体形成したベース部材と、底部の上面に設けられ、ベース部材の内側から外側へ貫通し、底部と接する面と反対側の面が一対の電極の一方と接する金属材料からなる導電性端子と、側部上面の全周にわたって接合される、金属材料からなる枠部材と、枠部材のベース部材と接する面と反対側の面の全周にわたって接合され、金属材料からなるカバー部材と、を備えたことを特徴とするものである。
12,32、52・・・枠部材
13、33・・・カバー部材
15、35、55・・・導電性端子
61・・・正極缶
62・・・ガスケット
63・・・負極缶
65a・・・正極端子
65b・・・負極端子
601・・・正極
602・・・セパレータ
603・・・負極
Claims (30)
- セパレータと、前記セパレータの上下面に配置された一対の電極と、前記セパレータ及び前記一対の電極に含浸された電解質を収容する容器からなる電気化学セルであって、
前記容器が、底部と前記底部の外周に沿って前記底部の上面に設けられた側部とを一体形成したベース部材と、
前記底部の上面に設けられ、前記ベース部材の内側から外側へ貫通し、前記底部と接する面と反対側の面が前記一対の電極の一方と接する金属材料からなる導電性端子と、
前記側部上面の全周にわたって接合される、金属材料からなる枠部材と、
前記枠部材の前記ベース部材と接する面と反対側の面の全周にわたって接合され、金属材料からなるカバー部材と、を備えたことを特徴とする電気化学セル。 - 一端が前記カバー部材の側面に延設されたカバー接続端子を有することを特徴とする請求項1記載の電気化学セル。
- 前記カバー端子の他端の一部および、前記導電性端子の前記ベース部材から延出している一端の一部が互いに同一平面上にある面を有することを特徴とする請求項2記載の電気化学セル。
- 一端が前記枠部材の側面に延設された枠接続端子を有することを特徴とする請求項1記載の電気化学セル。
- 前記枠接続端子の他端の一部および、前記導電性端子の前記ベース部材から延出している一端の一部が互いに同一平面上にある面を有することを特徴とする請求項4記載の電気化学セル。
- 一端が前記枠部材の側面に延設され、前記側部の上端部から前記側部と前記底部の接する面を介して前記底部の底面へと貫通することを特徴とする請求項5に記載の電気化学セル。
- 前記他端もしくは前記導電性端子の一端が前記底部の下面に接し、かつ、前記側部からそれぞれ端子の厚さよりも外側に突出しないことを特徴とする請求項2から6のいずれか一項に記載の電気化学セル。
- 前記導電性端子がステンレス若しくはアルミニウムからなる材料で構成されていることを特徴とする請求項1から7のいずれか一項に記載の電気化学セル。
- 前記枠部材及び前記カバー部材がステンレス、アルミニウム、及びFeNi合金のいずれかからなる材料で構成されていることを特徴とする請求項8記載の電気化学セル。
- 前記導電性端子がステンレスで前記枠部材及び前記カバー部材がFeNi合金で構成されていることを特徴とする請求項9記載の電気化学セル。
- 前記カバー部材と前記枠部材とが溶接されていることを特徴とする請求項1から10のいずれか一項に記載の電気化学セル。
- 前記枠部材と前記カバー部材にニッケル若しくは銀合金のロー材を被覆し、前記枠部材と前記カバー部材とが溶接されていることを特徴とする請求項11記載の電気化学セル。
- 前記枠部材と前記カバー部材とを重ね合わせて溶接する接合部の少なくとも一部に接合幅の狭い部位を設け、電気化学セルの内部圧が高まった場合前記電解質を排出する開口が形成されることを特徴とする請求項12記載の電気化学セル。
- 前記ベース部材がエポキシ系、ポリイミド系、ポリスチレン系、ポリフェニレンサルファイド系、ポリエステル系、ポリアミド系、及びポリエーテル系の何れかからなる材料で構成されていることを特徴とする請求項1から13のいずれか一項に記載の電気化学セル。
- 前記ベース部材もしくは前記カバー部材の少なくとも1箇所に厚さの薄い部位を設け、電気化学セルの内部圧が高まった場合前記電解質を排出する開口が形成されることを特徴とする請求項1から14のいずれか一項に記載の電気化学セル。
- セパレータと前記セパレータを介して対向する一対の電極を収納するベース部材と、前記ベース部材を貫通する導電性端子と、前記ベース部材に接合される枠部材と、前記枠部材に接合されるカバー部材とを有する電気化学セルの製造方法において、
フープに形成された前記枠部材を前記ベース部材の成形型内に配置する工程と、
前記導電性端子を前記ベース部材の成形型内に配置する工程と、
前記成形型内に樹脂材料を注入してベース部材を箱状に成形する工程と、
前記導電性端子と前記枠部材とが接合されたベース部材を容器として組み立てる工程と、
前記一対の電極のうち一方の電極を前記導電性端子に接着する工程と、
前記一方の電極の前記導電性端子と接する面と対向する面に前記パレータと前記一対の電極のうち他方の電極を配置する工程と、
前記枠部材と前記カバー部材とを重ね合わせ、加熱手段を用いて溶接する工程とを有する電気化学セルの製造方法。 - 前記導電性端子と枠部材とが接合されたベース部材を容器として組み立てる工程の後に、前記フープに通電して前記枠部材にロー材をめっきする工程を有する請求項16に記載の電気化学セルの製造方法。
- 前記枠部材が金属箔に複数個連続して成形され、ガイド穴を設けた金属箔のフープと、前記枠部材の一部がブリッジを有し、前記枠部材と前記カバー部材とを重ね合わせ、加熱手段を用いて溶接する工程の前もしくは後に金属箔のフープからブリッジを切り離す工程を有する請求項17記載の電気化学セルの製造方法。
- 前記フープに形成された前記枠部材を切り離す際、前記フープと前記枠部材とをつなぐ少なくとも1つの部位を残し、該枠部材から延出する枠接続端子とすることを特徴とする請求項18記載の電気化学セルの製造方法。
- 前記ベース部材は、200℃以上の温度で1分間以上の過熱において形状を保持する耐熱性を有する樹脂部品である請求項16から19のいずれか一項に記載の方法で製造する電気化学セル。
- セパレータと前記セパレータを介して対向する一対の電極を収納するベース部材と、前記ベース部材を貫通する導電性端子と、前記ベース部材に接合される枠部材と、前記枠部材に接合されるカバー部材とを有する電気化学セルの製造方法において、
フープに形成された前記導電性端子を前記ベース部材の成形型内に配置する工程と、
前記枠部材を前記ベース部材の成形型内に配置する工程と、
前記成形型内に樹脂材料を注入してベース部材を箱状に成形する工程と、
前記枠部材と前記導電性端子とが接合されたベース部材を容器として組み立てる工程と、
前記一対の電極のうち一方の電極を前記導電性端子に接着する工程と、
前記一方の電極の前記導電性端子と接する面と対向する面に前記パレータと前記一対の電極のうち他方の電極を配置する工程と、
前記枠部材と前記カバー部材とを重ね合わせ、加熱手段を用いて溶接する工程とを有する電気化学セルの製造方法。 - 前記導電性端子と枠部材とが接合されたベース部材を容器として組み立てる工程の後に、前記フープに通電して前記枠部材にロー材をめっきする工程を有する請求項21に記載の電気化学セルの製造方法。
- 前記導電性端子が金属箔に複数個連続して成形され、ガイド穴を設けた金属箔のフープと、前記導電性端子の一部がブリッジを有し、前記枠部材と前記カバー部材とを重ね合わせ、加熱手段を用いて溶接する工程の前もしくは後に金属箔のフープからブリッジを切り離す工程を有する請求項22記載の電気化学セルの製造方法。
- 前記フープに形成された前記導電性端子を切り離す際、前記フープと前記導電性端子とをつなぐ少なくとも1つの部位を残し、該枠部材から延出する枠接続端子とすることを特徴とする請求項23記載の電気化学セルの製造方法。
- 前記ベース部材は、200℃以上の温度で1分間以上の過熱において形状を保持する耐熱性を有する樹脂部品である請求項21から24のいずれか一項に記載の方法で製造する電気化学セル。
- セパレータと、前記セパレータを介して対向する一対の電極と、前記セパレータ及び前記一対の電極に含浸された電解質とを収納する容器とからなる電気化学セルであって、
前記一対の電極と前記セパレータと前記電解質とを収納する箱状の樹脂材料からなるベース部材と、
実装基板に設けたランドに表面実装される導電性端子と接続端子とを有し、
前記導電性端子と前記接続端子の長さまたは形状の違いにより正極、負極を識別することを特徴とする電気化学セル。 - 前記導電性端子と前記接続端子は前記ベース部材の下端面より突出し、実装基板に接続されることを特徴とする請求項26記載の電気化学セル。
- 前記導電性端子と前記接続端子は前記ベース部材の側壁よりそれぞれ端子の厚さよりも外側に突出しないことを特徴とする請求項27記載の電気化学セル。
- 前記導電性端子と前記接続端子のそれぞれ実装基板に接続される接合部に錫、ニッケル、銀のめっき膜を有することを特徴とする請求項26から28のいずれか一項に記載の電気化学セル。
- 前記ベース部材は、200℃以上の温度で1分間以上の過熱において形状を保持する耐熱性を有する樹脂部品である請求項26から29のいずれか一項に記載の電気化学セル。
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6232623A (ja) * | 1985-08-05 | 1987-02-12 | Mitsubishi Electric Corp | 半導体装置 |
JPH05315189A (ja) * | 1992-04-01 | 1993-11-26 | Nec Corp | モールド外装型電気二重層コンデンサ及びその製造方法 |
JPH09283387A (ja) * | 1996-04-12 | 1997-10-31 | Fuji Elelctrochem Co Ltd | 電気二重層コンデンサ |
JPH10144279A (ja) * | 1996-11-07 | 1998-05-29 | Fuji Elelctrochem Co Ltd | 角形電気化学素子の防爆構造 |
JPH1154387A (ja) * | 1997-07-30 | 1999-02-26 | Tdk Corp | チップ型電気二重層キャパシタ |
JPH11191520A (ja) * | 1997-12-26 | 1999-07-13 | Tdk Corp | チップ型電気二重層コンデンサ |
JP2001216952A (ja) * | 2000-02-04 | 2001-08-10 | Seiko Instruments Inc | 非水電解質電池および電気二重層キャパシタ |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52112729A (en) * | 1976-03-12 | 1977-09-21 | Furukawa Battery Co Ltd | Method of airrtightly bonding ceramic member of ceramic sealing cover of battery to metallic member |
US6025087A (en) * | 1998-02-19 | 2000-02-15 | Micron Technology, Inc. | Battery mounting and testing apparatuses, methods of forming battery mounting and testing apparatuses, battery-powered test configured electronic devices, and methods of forming battery-powered test configured electronic devices |
DE19837909C2 (de) * | 1998-08-20 | 2001-05-17 | Implex Hear Tech Ag | Schutzvorrichtung für eine mehrfach nachladbare elektrochemische Batterie |
JP3684305B2 (ja) * | 1998-09-17 | 2005-08-17 | 日本オプネクスト株式会社 | 半導体レーザ結合装置および半導体受光装置 |
JP4785282B2 (ja) * | 2000-10-11 | 2011-10-05 | セイコーインスツル株式会社 | リフローはんだ付け実装可能な電気二重層キャパシタの製造方法 |
JP4020296B2 (ja) * | 2000-12-21 | 2007-12-12 | キヤノン株式会社 | イオン伝導構造体、二次電池及びそれらの製造方法 |
JP3737389B2 (ja) * | 2001-06-19 | 2006-01-18 | 京セラ株式会社 | バッテリー |
-
2004
- 2004-04-29 US US10/834,636 patent/US7023078B2/en not_active Expired - Fee Related
- 2004-06-29 JP JP2004191069A patent/JP4520778B2/ja not_active Expired - Fee Related
- 2004-06-29 US US10/880,400 patent/US7541111B2/en not_active Expired - Fee Related
-
2009
- 2009-05-07 US US12/387,939 patent/US20090223036A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6232623A (ja) * | 1985-08-05 | 1987-02-12 | Mitsubishi Electric Corp | 半導体装置 |
JPH05315189A (ja) * | 1992-04-01 | 1993-11-26 | Nec Corp | モールド外装型電気二重層コンデンサ及びその製造方法 |
JPH09283387A (ja) * | 1996-04-12 | 1997-10-31 | Fuji Elelctrochem Co Ltd | 電気二重層コンデンサ |
JPH10144279A (ja) * | 1996-11-07 | 1998-05-29 | Fuji Elelctrochem Co Ltd | 角形電気化学素子の防爆構造 |
JPH1154387A (ja) * | 1997-07-30 | 1999-02-26 | Tdk Corp | チップ型電気二重層キャパシタ |
JPH11191520A (ja) * | 1997-12-26 | 1999-07-13 | Tdk Corp | チップ型電気二重層コンデンサ |
JP2001216952A (ja) * | 2000-02-04 | 2001-08-10 | Seiko Instruments Inc | 非水電解質電池および電気二重層キャパシタ |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008536262A (ja) * | 2005-03-22 | 2008-09-04 | シン バッテリー テクノロジーズ,インク. | 画像フレームを利用する印刷可能な薄型電気化学セルおよびその製造方法 |
JP2006269946A (ja) * | 2005-03-25 | 2006-10-05 | Sii Micro Parts Ltd | キャパシタおよびその製造方法 |
WO2007086569A1 (ja) * | 2006-01-30 | 2007-08-02 | Kyocera Corporation | 蓄電体用容器ならびにそれを用いた電池および電気二重層キャパシタ |
JP5112885B2 (ja) * | 2006-01-30 | 2013-01-09 | 京セラ株式会社 | 蓄電体用容器ならびにそれを用いた電池および電気二重層キャパシタ |
US9023510B2 (en) | 2010-03-17 | 2015-05-05 | Taiyo Yuden Co., Ltd. | Electrochemical device |
WO2011115003A1 (ja) * | 2010-03-17 | 2011-09-22 | 太陽誘電株式会社 | 電気化学デバイス |
JP2011198823A (ja) * | 2010-03-17 | 2011-10-06 | Taiyo Yuden Co Ltd | 電気化学デバイス |
JP2012186458A (ja) * | 2011-02-15 | 2012-09-27 | Seiko Instruments Inc | 電気化学素子及びその製造方法 |
WO2012141231A1 (ja) * | 2011-04-15 | 2012-10-18 | 株式会社 村田製作所 | 固体電池 |
JP5804053B2 (ja) * | 2011-04-15 | 2015-11-04 | 株式会社村田製作所 | 固体電池 |
JPWO2012141231A1 (ja) * | 2011-04-15 | 2014-07-28 | 株式会社村田製作所 | 固体電池 |
KR101222872B1 (ko) | 2011-08-08 | 2013-01-25 | 비나텍주식회사 | 케이스 단자를 갖는 슈퍼 커패시터 및 그의 제조 방법 |
US9027242B2 (en) | 2011-09-22 | 2015-05-12 | Blue Spark Technologies, Inc. | Cell attachment method |
US10074830B2 (en) | 2011-09-30 | 2018-09-11 | Murata Manufacturing Co., Ltd. | Battery housing structure |
JP5561439B2 (ja) * | 2011-09-30 | 2014-07-30 | 株式会社村田製作所 | 電池収容構造体 |
WO2013047462A1 (ja) * | 2011-09-30 | 2013-04-04 | 株式会社 村田製作所 | 電池収容構造体 |
US10617306B2 (en) | 2012-11-01 | 2020-04-14 | Blue Spark Technologies, Inc. | Body temperature logging patch |
US9782082B2 (en) | 2012-11-01 | 2017-10-10 | Blue Spark Technologies, Inc. | Body temperature logging patch |
US9444078B2 (en) | 2012-11-27 | 2016-09-13 | Blue Spark Technologies, Inc. | Battery cell construction |
JP2014195051A (ja) * | 2013-02-28 | 2014-10-09 | Seiko Instruments Inc | 電気化学セルおよびその製造方法 |
JP2014195053A (ja) * | 2013-02-28 | 2014-10-09 | Seiko Instruments Inc | 電気化学セルおよびその製造方法 |
JP2014195052A (ja) * | 2013-02-28 | 2014-10-09 | Seiko Instruments Inc | 電気化学セルおよびその製造方法 |
US9693689B2 (en) | 2014-12-31 | 2017-07-04 | Blue Spark Technologies, Inc. | Body temperature logging patch |
US10631731B2 (en) | 2014-12-31 | 2020-04-28 | Blue Spark Technologies, Inc. | Body temperature logging patch |
US10849501B2 (en) | 2017-08-09 | 2020-12-01 | Blue Spark Technologies, Inc. | Body temperature logging patch |
Also Published As
Publication number | Publication date |
---|---|
US20050037258A1 (en) | 2005-02-17 |
US20090223036A1 (en) | 2009-09-10 |
JP4520778B2 (ja) | 2010-08-11 |
US20040257779A1 (en) | 2004-12-23 |
US7023078B2 (en) | 2006-04-04 |
US7541111B2 (en) | 2009-06-02 |
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