JP2004361402A - X線及びct画像検出器 - Google Patents
X線及びct画像検出器 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
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Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
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- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
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- High Energy & Nuclear Physics (AREA)
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- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Apparatus For Radiation Diagnosis (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】 X線検出器(400)は、予め選択された湾曲半径(402)に基づいて湾曲したガラス層(414)と、該ガラス層上に形成された光受容体(410)と、予め選択された湾曲半径(402)に基づいて湾曲したバッキング層(404)とを含む。バッキング層(404)は、ガラス層(414)を支持する。別の実施形態において、X線検出器は、光受容体と周辺部内に層間接続点とを含み、周辺部で界接する光受容体層を含む。
【選択図】 図4
Description
各層の厚さは、例証として、カバー層406に対しては0.5mm、シンチレータ層408に対しては0.4mmから2mm、非晶質シリコン層及び他の活性電子層412に対しては0.1mmから0.2mm、薄いガラス層414に対しては0.2mmから0.3mm、及びポリマー支持層416に対しては0.5mmから1mmとすることができる。
402 湾曲半径
404 バッキング層
406 カバー層
408 シンチレータ層
410 光受容体層
412 基板層
414 ガラス層
Claims (10)
- 予め選択された湾曲半径(402)に基づいて湾曲したガラス層(414)と、
前記ガラス層(414)上に形成された光受容体(410)と、
前記ガラス層(414)を支持する、前記予め選択された湾曲半径(402)に基づいて湾曲したバッキング層(404)と、
を備えるX線検出器(400)。 - 前記バッキング層(404)はセラミックのバッキング層である請求項1に記載のX線検出器(400)。
- 前記ガラス層(414)と前記バッキング層(404)との間に支持層(416)を更に備える請求項1に記載のX線検出器(400)。
- 前記バッキング層(404)は信号伝導体を更に備える請求項1に記載のX線検出器(400)。
- 前記バッキング層(404)は、複数の積層された薄い層(303)を含む請求項1に記載のX線検出器(400)。
- 前記ガラス層(414)は薄い可撓性のガラス層である請求項1に記載のX線検出器(400)。
- X線検出器(400)であって、
周辺部(202)で界接し、該周辺部内に光受容体と層間接続点(110)とを含む光受容体層(410)と、
前記光受容体層を支持する、予め選択された湾曲半径に基づいて湾曲し且つルーティング接続点(112)を含むバッキング層(404)と、
前記光受容体層と前記バッキング層との間に電気的接続性を確立するための、前記層間接続点と前記ルーティング接続点との間の電気的接続部と、
を備えるX線検出器(400)。 - 前記バッキング層(404)は前記予め選択された湾曲半径に従うように配列された複数の個々の光受容体層を支持する請求項7に記載のX線検出器(400)。
- X線検出器を製作する方法であって、
周辺部で界接し、且つ該周辺部内に光受容体と層間接続点とを備える光受容体層を得る段階(602)と、
予め選択された湾曲半径に基づいて湾曲し且つルーティング接続点を備えるバッキング層を得る段階(604)と、
前記光受容体層を前記バッキング層で支持する段階(606)と、
前記層間接続点と前記ルーティング接続点との間に電気的接続を確立することにより前記光受容体層を前記バッキング層に接続する段階(608)と、
を含む方法。 - 光受容体層を得る前記段階(602)は、各々が層間接続点を備える複数の光受容体層を得る段階を含み、
前記支持する段階(606)は、前記複数の光受容体層が前記予め選択された湾曲半径に従うように前記バッキング層で前記複数の光受容体層を支持する段階を含み、
前記接続する段階(608)は、前記層間接続点と前記ルーティング接続点との間の電気的相互接続を通じて、前記複数の光受容体を前記バッキング層に接続する段階を含む請求項9に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/452,460 US6982424B2 (en) | 2003-06-02 | 2003-06-02 | X-ray and CT image detector |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004361402A true JP2004361402A (ja) | 2004-12-24 |
JP2004361402A5 JP2004361402A5 (ja) | 2007-07-12 |
JP4647938B2 JP4647938B2 (ja) | 2011-03-09 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004162780A Expired - Fee Related JP4647938B2 (ja) | 2003-06-02 | 2004-06-01 | X線検出器を製作する方法 |
Country Status (3)
Country | Link |
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US (1) | US6982424B2 (ja) |
JP (1) | JP4647938B2 (ja) |
DE (1) | DE102004026948A1 (ja) |
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JP2007101256A (ja) * | 2005-09-30 | 2007-04-19 | Fujifilm Corp | X線撮像装置及びx線ct装置 |
KR101111011B1 (ko) | 2008-12-26 | 2012-02-15 | 연세대학교 산학협력단 | 감마선 영상측정을 위한 다층 평판형 검출기 및 3차원 위치검출방법 |
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JP2013504057A (ja) * | 2009-09-08 | 2013-02-04 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 印刷された光検出器アレイを備えた撮像測定システム |
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-
2004
- 2004-06-01 DE DE102004026948A patent/DE102004026948A1/de not_active Withdrawn
- 2004-06-01 JP JP2004162780A patent/JP4647938B2/ja not_active Expired - Fee Related
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Also Published As
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US20040238750A1 (en) | 2004-12-02 |
US6982424B2 (en) | 2006-01-03 |
JP4647938B2 (ja) | 2011-03-09 |
DE102004026948A1 (de) | 2004-12-30 |
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