JP2004349676A - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法 Download PDFInfo
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- JP2004349676A JP2004349676A JP2003383104A JP2003383104A JP2004349676A JP 2004349676 A JP2004349676 A JP 2004349676A JP 2003383104 A JP2003383104 A JP 2003383104A JP 2003383104 A JP2003383104 A JP 2003383104A JP 2004349676 A JP2004349676 A JP 2004349676A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000012535 impurity Substances 0.000 claims abstract description 18
- 239000011229 interlayer Substances 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 14
- 238000011065 in-situ storage Methods 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 3
- 238000005108 dry cleaning Methods 0.000 abstract description 4
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- -1 hydrogen compound Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
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- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】接合領域42を含んだ所定の下部構造物が形成された半導体基板41を用意する段階と、前記半導体基板の上面全面に層間絶縁膜43を形成する段階と、前記層間絶縁膜をエッチングして接合領域を露出させるコンタクトホール45を形成する段階と、前記コンタクトホールにより露出された半導体基板の表面に対し順次に乾式及び湿式洗浄する段階と、前記洗浄された半導体基板のコンタクト表面を還元性ガス雰囲気で前処理してコンタクト表面に形成された自然酸化膜を除去する段階と、前記前処理されたコンタクト表面での不純物損失が補償されるようにイン−シトウ(in−situ)で接合領域の表面に不純物を追加ドーピングする段階と、前記コンタクトホール及び層間絶縁膜上にイン−シトウで導電膜46を蒸着する段階とを含む。
【選択図】図9
Description
図1乃至図3は従来技術による半導体素子の製造方法を説明するための工程別断面図である。
したがって、このような自然酸化膜を除去するために本発明では、基板の結果物を装置内に装入させた後、まず、水素またはアンモニアガスのような還元性ガス、望ましくは、水素ガス雰囲気で前処理を行なう。
42 接合領域
43 層間絶縁膜
45 コンタクトホール
46 金属配線
Claims (6)
- 接合領域を含んだ所定の下部構造物が形成された半導体基板を用意する段階と、
前記半導体基板の上面全面に層間絶縁膜を形成する段階と、
前記層間絶縁膜をエッチングして接合領域を露出させるコンタクトホールを形成する段階と、
前記コンタクトホールにより露出された半導体基板の表面に対し順次に乾式及び湿式洗浄する段階と、
前記洗浄された半導体基板のコンタクト表面を還元性ガス雰囲気で前処理してコンタクト表面に形成された自然酸化膜を除去する段階と、
前記前処理されたコンタクト表面での不純物損失が補償されるようにイン−シトウ(in−situ)で接合領域の表面に不純物を追加ドーピングする段階と、
前記コンタクトホール及び層間絶縁膜上にイン−シトウで導電膜を蒸着する段階とを含むこと特徴とする半導体素子の製造方法。 - 前記還元性ガスは、水素ガスまたはアンモニアガスを含むことを特徴とする請求項1に記載の半導体素子の製造方法。
- 前記還元性ガス雰囲気での前処理は、低温プラズマ処理または高温熱処理で遂行することを特徴とする請求項1に記載の半導体素子の製造方法。
- 前記低温プラズマ処理は、水素ガスを1〜1000sccm(standard cc/min)の流量で流しながら、1〜300Torrの圧力、及び常温〜600℃の温度下で遂行することを特徴とする請求項3に記載の半導体素子の製造方法。
- 前記高温熱処理は、水素ガスを1〜5slm(standard liter/min)の流量で流しながら、1〜300Torrの圧力、及び700〜1000℃の温度下で遂行することを特徴とする請求項3に記載の半導体素子の製造方法。
- 前記コンタクト表面に不純物を追加ドーピングする段階は、損失された不純物を内包する物質を装置内に供給した後、低温プラズマ処理または高温熱処理することにより遂行されることを特徴とする請求項1に記載の半導体素子の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0032210A KR100518228B1 (ko) | 2003-05-21 | 2003-05-21 | 반도체 소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004349676A true JP2004349676A (ja) | 2004-12-09 |
JP4508607B2 JP4508607B2 (ja) | 2010-07-21 |
Family
ID=36592766
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003383104A Expired - Fee Related JP4508607B2 (ja) | 2003-05-21 | 2003-11-12 | 半導体素子の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6979633B2 (ja) |
JP (1) | JP4508607B2 (ja) |
KR (1) | KR100518228B1 (ja) |
CN (1) | CN1282999C (ja) |
TW (1) | TWI234203B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101593678B (zh) * | 2008-05-30 | 2012-05-16 | 中芯国际集成电路制造(北京)有限公司 | 掺杂区形成方法 |
CN101969048B (zh) * | 2009-07-27 | 2012-07-25 | 中芯国际集成电路制造(上海)有限公司 | 存储器件的制作方法 |
CN101724896B (zh) * | 2009-11-26 | 2012-08-08 | 上海宏力半导体制造有限公司 | 一种非选择性生长锗硅外延的方法 |
KR101062862B1 (ko) * | 2010-07-07 | 2011-09-07 | 주식회사 하이닉스반도체 | 측벽접합을 구비한 반도체장치 제조 방법 |
CN103346126A (zh) * | 2013-06-26 | 2013-10-09 | 上海宏力半导体制造有限公司 | 闪存存储单元的形成方法 |
US20150093889A1 (en) * | 2013-10-02 | 2015-04-02 | Intermolecular | Methods for removing a native oxide layer from germanium susbtrates in the fabrication of integrated circuits |
CN104091762A (zh) * | 2014-07-16 | 2014-10-08 | 上海先进半导体制造股份有限公司 | 双极型晶体管的制备方法 |
CN108538780A (zh) * | 2018-04-18 | 2018-09-14 | 睿力集成电路有限公司 | 位线/存储节点接触栓塞和多晶硅接触薄膜的制造方法 |
US11088147B2 (en) | 2019-06-26 | 2021-08-10 | Micron Technology, Inc. | Apparatus with doped surfaces, and related methods with in situ doping |
CN111446156A (zh) * | 2020-04-03 | 2020-07-24 | 合肥晶合集成电路有限公司 | 半导体结构的形成方法及半导体结构 |
CN114063320A (zh) * | 2020-07-31 | 2022-02-18 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0669152A (ja) * | 1992-08-20 | 1994-03-11 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
JPH11204455A (ja) * | 1998-01-13 | 1999-07-30 | Sony Corp | 半導体装置の製造方法 |
JP2003115462A (ja) * | 2001-10-05 | 2003-04-18 | Kawasaki Microelectronics Kk | コンタクト構造の形成方法 |
JP2003124314A (ja) * | 2001-10-08 | 2003-04-25 | Hynix Semiconductor Inc | 半導体素子の製造方法 |
JP2003124140A (ja) * | 2001-10-12 | 2003-04-25 | Hynix Semiconductor Inc | 半導体素子の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0618236B2 (ja) | 1987-07-01 | 1994-03-09 | 富士電機株式会社 | 半導体素子の製造方法 |
JP2978748B2 (ja) | 1995-11-22 | 1999-11-15 | 日本電気株式会社 | 半導体装置の製造方法 |
JP4663038B2 (ja) * | 1997-05-28 | 2011-03-30 | 三菱電機株式会社 | コンタクトホールの形成方法 |
US6242331B1 (en) * | 1999-12-20 | 2001-06-05 | Taiwan Semiconductor Manufacturing Company | Method to reduce device contact resistance using a hydrogen peroxide treatment |
-
2003
- 2003-05-21 KR KR10-2003-0032210A patent/KR100518228B1/ko not_active IP Right Cessation
- 2003-11-07 TW TW092131157A patent/TWI234203B/zh not_active IP Right Cessation
- 2003-11-07 US US10/704,231 patent/US6979633B2/en not_active Expired - Fee Related
- 2003-11-12 JP JP2003383104A patent/JP4508607B2/ja not_active Expired - Fee Related
- 2003-11-25 CN CNB2003101181947A patent/CN1282999C/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0669152A (ja) * | 1992-08-20 | 1994-03-11 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
JPH11204455A (ja) * | 1998-01-13 | 1999-07-30 | Sony Corp | 半導体装置の製造方法 |
JP2003115462A (ja) * | 2001-10-05 | 2003-04-18 | Kawasaki Microelectronics Kk | コンタクト構造の形成方法 |
JP2003124314A (ja) * | 2001-10-08 | 2003-04-25 | Hynix Semiconductor Inc | 半導体素子の製造方法 |
JP2003124140A (ja) * | 2001-10-12 | 2003-04-25 | Hynix Semiconductor Inc | 半導体素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US6979633B2 (en) | 2005-12-27 |
KR100518228B1 (ko) | 2005-10-04 |
CN1282999C (zh) | 2006-11-01 |
KR20040100015A (ko) | 2004-12-02 |
US20040235282A1 (en) | 2004-11-25 |
TW200426942A (en) | 2004-12-01 |
JP4508607B2 (ja) | 2010-07-21 |
CN1574290A (zh) | 2005-02-02 |
TWI234203B (en) | 2005-06-11 |
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