JP2004297054A - 半導体装置およびその製造方法 - Google Patents
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Abstract
【解決手段】 半導体装置は、層間絶縁膜405および絶縁膜409と、絶縁膜409内に埋設された配線407、408aおよび408bと、絶縁膜409上に搭載された回路素子410aおよび410bと、回路素子410aおよび410bを覆うように形成された封止膜415と、封止膜415を覆うように形成された導電性の遮蔽膜416と、を含む。配線408aおよび408bは、遮蔽膜416に電気的に接続して構成される。
【選択図】 図2
Description
(i)コアレスで実装できるため、トランジスタ、IC、LSIの小型・薄型化を実現できる。
(ii)トランジスタからシステムLSI、さらにチップタイプのコンデンサや抵抗を回路形成し、パッケージングすることができるため、高度なSiP(System in Package)を実現できる。
(iii)現有の半導体チップを組み合わせできるため、システムLSIを短期間に開発できる。
(iv)半導体ベアチップの下にコア材がないため、良好な放熱性を得ることができる。
(v)回路配線が銅材でありコア材がないため、低誘電率の回路配線となり、高速データ転送や高周波回路で優れた特性を発揮する。
(vi)電極がパッケージの内部に埋め込まれる構造のため、電極材料のパーティクルコンタミの発生を抑制できる。
(vii)パッケージサイズはフリーであり、1個あたりの廃材を64ピンのSQFPパッケージと比較すると、約1/10の量となるため、環境負荷を低減できる。
(viii)部品を載せるプリント回路基板から、機能の入った回路基板へと、新しい概念のシステム構成を実現できる。
(ix)ISBのパターン設計は、プリント回路基板のパターン設計と同じように容易であり、セットメーカーのエンジニアが自ら設計できる。
まず、積層体を、表面側(図中上側)から層間絶縁膜405の途中までダイシングして分割溝411を形成する(図2(b))。これにより、被切断配線408は第一の回路素子410aに接続した配線408aと第二の回路素子410bに接続した配線408bとに分割され、配線408aおよび配線408bともに分割溝411の側面に露出する。
まず、金属箔402表面上の所定の領域に選択的に導電被膜422を形成する(図5(a))。具体的には、フォトレジスト(不図示)で金属箔402を被覆した後、所定の領域のフォトレジストを除去して金属箔402表面の一部を露出させる、つづいて、電解めっき法により、金属箔402の露出面に導電被膜422を形成する。導電被膜422の膜厚は、例えば1〜10μm程度とする。この導電被膜422は、最終的に半導体装置の裏面電極となるので、半田等のロウ材との接着性の良い金、または銀を用いて形成することが好ましい。 金属箔402の主材料は、Cu、Al、Fe−Ni等の合金等とすることが好ましい。ロウ材の付着性やめっき性が良好だからである。金属箔402の厚さは、特に制限はないが、たとえば10μm〜300μm程度とすることができる。
図2および図3においては、一つの半導体装置に一つの回路素子が含まれる構成を示したが、半導体装置は、一つの装置内に複数の回路素子が含まれるモジュールとすることもできる。
図8(a)は、半導体装置の製造途中における積層体を示す。積層体は、金属箔402上に形成された多層配線構造と、その上に形成された複数の受動素子410cや複数の半導体素子410d、410e、410fとを含む。このように構成された積層体に、図中上側から多層配線構造の途中までダイシングして分割溝411を形成する(図8(b))。その後、図2を参照して上述したのと同様にして、半導体装置を覆うようにして遮蔽膜を形成する。つづいて、金属箔402を除去する。その後、金属箔402を除去した面に半田ボール420を形成する。次いで、分割溝411に沿って、図8(b)で示したのとは反対側の面から再びダイシングして半導体装置を分割する。これにより、図8(c)に示す構成の半導体装置が得られる。
Claims (6)
- 絶縁層と、
前記絶縁層内に埋設された配線と、
前記絶縁層上に搭載された回路素子と、
前記回路素子を覆うように形成された封止層と、
前記封止層を覆うように形成された導電性の遮蔽膜と、
を含み、
前記配線と前記遮蔽膜とが電気的に接続していることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記遮蔽膜を覆うように形成され、前記遮蔽膜を構成する材料よりも腐食耐性の高い材料により構成された保護膜をさらに含むことを特徴とする半導体装置。 - 絶縁層と、前記絶縁層内に埋設された配線と、前記絶縁層表面に搭載された回路素子と、前記回路素子を覆うように形成された封止層と、を含む積層体を分割して前記回路素子を含む半導体装置を製造する方法であって、
前記積層体の表面に分割溝を形成して前記配線の側面を露出させる工程と、
前記積層体の表面側を導電性材料で覆い、前記配線と電気的に接続した遮蔽膜を形成する工程と、
前記積層体を裏面から前記分割溝に沿って切断し、当該積層体の前記回路素子を他の領域から分割する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 請求項3に記載の半導体装置の製造方法において、
前記配線を接地させる工程をさらに含むことを特徴とする半導体装置の製造方法。 - 請求項3または4に記載の半導体装置の製造方法において、
前記絶縁層上には複数の回路素子が搭載され、前記配線の側面を露出させる工程の前において、前記配線は前記複数の回路素子に接続して設けられ、
前記配線の側面を露出させる工程において、前記配線を分割し、当該分割された各配線が各前記回路素子にそれぞれ接続されるように前記分割溝を形成することを特徴とする半導体装置の製造方法。 - 請求項3乃至5いずれかに記載の半導体装置の製造方法において、
前記遮蔽膜を、当該遮蔽膜を構成する材料よりも腐食耐性の高い材料により構成された保護膜で覆う工程をさらに含むことを特徴とする半導体装置の製造方法。
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JP2004064828A JP4020874B2 (ja) | 2003-03-13 | 2004-03-08 | 半導体装置およびその製造方法 |
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