JP2004259549A - Transparent electrode film - Google Patents

Transparent electrode film Download PDF

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Publication number
JP2004259549A
JP2004259549A JP2003048065A JP2003048065A JP2004259549A JP 2004259549 A JP2004259549 A JP 2004259549A JP 2003048065 A JP2003048065 A JP 2003048065A JP 2003048065 A JP2003048065 A JP 2003048065A JP 2004259549 A JP2004259549 A JP 2004259549A
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JP
Japan
Prior art keywords
transparent electrode
based semiconductor
zno
semiconductor layer
gan
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JP2003048065A
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Japanese (ja)
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JP4034208B2 (en
Inventor
Takeshi Nakahara
健 中原
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Rohm Co Ltd
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Rohm Co Ltd
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Priority to JP2003048065A priority Critical patent/JP4034208B2/en
Priority to TW092135914A priority patent/TW200423434A/en
Priority to US10/748,734 priority patent/US7417263B2/en
Publication of JP2004259549A publication Critical patent/JP2004259549A/en
Application granted granted Critical
Publication of JP4034208B2 publication Critical patent/JP4034208B2/en
Priority to US12/177,090 priority patent/US7948003B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

Abstract

<P>PROBLEM TO BE SOLVED: To provide a transparent electrode film strong against deterioration by moisture, and having acid resistance and alkaline resistance. <P>SOLUTION: This transparent electrode is formed by covering the surface of the transparent electrode containing ZnO as a main material with a ZnO film with Mg added. Reliability degradation can be prevented even against moisture containing ions. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本願発明は、イオンを含む水分による劣化に強く耐酸性、耐アルカリ性のある透明電極膜に関する。
【０００２】
【従来の技術】
従来、ＬＥＤ等の半導体発光素子や液晶は電極側から光を出射させるために、電極を透明な材料で構成し、透明電極を透過させて出射させている（例えば、特許文献１参照。）。透明電極としての材料であるＺｎＯは酸やアルカリによって侵食されやすく、イオンを含む水分の影響で電極の信頼性が失われることがある。また、ＬＥＤの発光を利用した白色光源として使用する場合、蛍光物質を混入したエポキシ樹脂で半導体発光素子を覆っている。従来の白色光源として使用する発光素子モジュールの構成を図４に示す。図４において、５１は半導体発光素子、５２はエポキシ樹脂、５３はモジュール基板である。図４に示すように、発光素子モジュールのモジュール基板５３上に搭載された半導体発光素子５１の全体をエポキシ樹脂５２で覆っている。半導体発光素子５１からの発光によって、エポキシ樹脂５２に混入した蛍光物質が励起されて白色に発光する。しかし、エポキシ樹脂５２は水分を通しやすく、エポキシ樹脂５２に含まれている水分や外部からの水分が浸入し、特に、イオンを含んでいる水分が、酸やアルカリを示して、半導体発光素子に使用されているＺｎＯ透明電極が侵食されることがある。これは恐らく、Ｚｎのイオン化傾向が大きいことによると考えられる。
【０００３】
【特許文献１】
特開平１１−７０６１０号公報 （第（３）頁〜第（４）頁、第３図）
【０００４】
【発明が解決しようとする課題】
本願発明は、このような問題を解決するために、イオンを含む水分侵入による劣化に強い透明電極膜を提供することを目的とする。
【０００５】
【課題を解決するための手段】
発明者は、発光素子の透明電極として使用するＺｎＯにＭｇを添加すると、耐酸性が飛躍的に向上することを見出した。図１にＭｇの添加量をパラメータにＭｇを添加したＺｎＯ透明電極の耐酸性を測定した実験結果を示す。図１において、横軸はエッチング時間、縦軸はエッチング量、ＭｇのパラメータはＺｎＯに対して添加するＭｇの重量％を示す。この実験では、３５％濃度の塩酸１に対して水１００の体積割合とした酸性液にＺｎＯ透明電極を浸してエッチング量を測定したものである。図１より、Ｍｇを添加しないＺｎＯ透明電極と比較して、Ｍｇを１２ｍｏｌ％以上添加すると、エッチング量は四分の１以下になることが分かる。このことは、同時にＭｇを添加したＺｎＯはイオンを含む水分に対しても信頼度劣化が防止できることを示すものである。
【０００６】
そこで、前述した目的を達成するために、本願発明は、Ｍｇを添加したＺｎＯ膜でＺｎＯを主材料とした透明電極の表面を被覆した透明電極である。
本願発明により、透明電極の耐酸性の強化とイオンを含む水分に対する信頼度劣化を防止することができる。
【０００７】
【発明の実施の形態】
以下、本願発明の実施の形態について、添付の図面を参照して説明する。
（実施の形態１）
本願発明の第一の実施の形態を図２に示す。図２はＧａＮ系半導体発光素子に本願発明を適用した例である。図２において、１１はＭｇを添加したＺｎＯ膜、１２はＺｎＯ透明電極、１３は金属パターン、１４は金属電極、１５はサファイヤ基板、２１はｐ型ＧａＮ系半導体層、２２は発光層、２３はｎ型ＧａＮ系半導体層、２０はｐ型ＧａＮ系半導体層２１と、発光層２２と、ｎ型ＧａＮ系半導体層２３とを含むＧａＮ系半導体層である。本願において、ＧａＮ系半導体層とは、ＩｎｐＧａｑＡｌｒＮ（ｐ＋ｑ＋ｒ＝１、ｐ≧０、ｑ≧０、ｒ≧０）を少なくとも１層含む半導体層をいう。
【０００８】
このようなＧａＮ系半導体発光素子は、まず、サファイヤ基板１５の上面にＭＯＣＶＤ法などによりｎ型ＧａＮ系半導体層２３を形成する。ｎ型ＧａＮ系半導体層２３はｎ型ＧａＮとＧａＮバッファ層で構成することが好適である。ｎ型ＧａＮ系半導体層２３はＥＬＯ（Ｅｐｉｔａｘｉａｌ Ｌａｔｅｒａｌ Ｏｖｅｒｇｒｏｗｔｈ）で形成してもよい。ｎ型ＧａＮ系半導体層２３の上面に発光層２２を形成する。発光層２２は、ＩｎｘＧａ１−ｘＮ（０≦ｘ＜１）又は／及びＡｌｙＧａ１−ｙＮ（０≦ｙ＜１）からなる。また、発光層２２は、ＩｎｘＧａ１−ｘＮ／ＧａＮ（０≦ｘ＜１）でＩｎとＧａとの比率を調整して、又はＡｌｙＧａ１−ｙＮ／ＧａＮ（０≦ｙ＜１）でＡｌとＧａとの比率を調整して多重量子井戸構造としてもよい。さらに、ＩｎｐＧａｑＡｌｒＮ／ＧａＮ（ｐ＋ｑ＋ｒ＝１、ｐ≧０、ｑ≧０、ｒ≧０）でＩｎと、Ｇａと、Ａｌとの比率を調整して多重量子井戸構造としてもよい。また、発光層２２のｎ型ＧａＮ系半導体層の側にｎ型ＡｌｙＧａ１−ｙＮ（０≦ｙ＜１）からなる層を設けてもよいし、発光層２２のｐ型ＧａＮ系半導体層の側にｐ型ＡｌｙＧａ１−ｙＮ（０≦ｙ＜１）からなる層を設けてもよい。
【０００９】
次に、発光層２２の上面にｐ型ＧａＮ系半導体層２１を形成する。ｐ型ＧａＮ系半導体層２１の上面に、ＺｎＯ透明電極１２を形成した後に、ＺｎＯ透明電極１２、ｐ型ＧａＮ系半導体層２１、発光層２２、及びｎ型ＧａＮ系半導体層２３の一部をエッチングにより除去する。ｎ型ＧａＮ系半導体層２３は層の途中までエッチングする。次に、Ｍｇを添加したＺｎＯ膜１１を形成し、露出したｎ型ＧａＮ系半導体層２３の上面に金属電極１４を、Ｍｇを添加したＺｎＯ膜１１の上面に金属パターン１３を蒸着法やスパッタ法で形成する。
【００１０】
又は、発光層２２の上面にｐ型ＧａＮ系半導体層２１を形成した後、ｐ型ＧａＮ系半導体層２１、発光層２２、及びｎ型ＧａＮ系半導体層２３の一部をエッチングにより除去する。ｎ型ＧａＮ系半導体層２３は層の途中までエッチングする。次に、ｐ型ＧａＮ系半導体層２１の上面に、ＺｎＯ透明電極１２とさらにその上面にＭｇを添加したＺｎＯ膜１１を形成する。露出したｎ型ＧａＮ系半導体層２３の上面に金属電極１４を、Ｍｇを添加したＺｎＯ膜１１の上面には、金属パターン１３を蒸着法やスパッタ法で形成する。
【００１１】
前述のＭｇを添加したＺｎＯ膜１１は、ＭｇＯとＺｎＯの粉末を混合したものを焼成したターゲットを用いてスパッタ法、イオンプレーティング法などで形成する。また、金属Ｍｇ及び金属Ｚｎをヒータで加熱して分子線として供給し、酸素はＲＦラジカルセルで供給する分子線エピタキシー法に似た蒸着法でも形成することができる。
【００１２】
また、金属パターン１３を形成する材料としては、Ａｌ、Ｔｉ、Ｃｒ、Ｎｉ、Ｃｕ、Ｍｏ、Ｐｄ、Ｗ、Ｐｔ、若しくはＡｕのいずれか、又はこれらの合金を適用することができる。金属パターンにはボンディング用の金属パッドを含む。
【００１３】
本実施の形態で説明したようなＭｇを添加したＺｎＯ膜でＺｎＯ透明電極を被覆すると、Ｍｇを添加したＺｎＯ膜及びＺｎＯ透明電極が水分によって侵食されることを防止することができる。Ｍｇを添加したＺｎＯにはＺｎＯと同様の光透過性と導電性があるため、ＧａＮ系半導体層の一部から発光した光は、Ｍｇを添加したＺｎＯ膜を透過し、また、Ｍｇを添加したＺｎＯ膜１１の上面に形成された金属パターン１３とＺｎＯ透明電極１２との導通も確保される。
【００１４】
本実施の形態では、サファイヤ基板１５の上面にＧａＮ系半導体層を形成したが、サファイヤ基板１５に替えて、導電性基板上にＧａＮ系半導体発光素子を形成してもよい。また、ＧａＮ系半導体層の上面に透明電極を形成した例を説明したが、ＧａＮ系半導体層ばかりでなく、半導体発光素子となる半導体層や、さらには、液晶等の電子素子のようにＺｎＯ透明電極を形成する素子には本願発明を適用することができる。
【００１５】
（実施の形態２）
本願発明の第二の実施の形態を図３に示す。図３はＧａＮ系半導体発光素子に本願発明を適用した例である。図３において、１１はＭｇを添加したＺｎＯ膜、１２はＺｎＯ透明電極、１３は金属パターン、１４は金属電極、１５はサファイヤ基板、２１はｐ型ＧａＮ系半導体層、２２は発光層、２３はｎ型ＧａＮ系半導体層、２０はｐ型ＧａＮ系半導体層２１と、発光層２２と、ｎ型ＧａＮ系半導体層２３とを含むＧａＮ系半導体層である。
【００１６】
金属パターン１３を形成する材料としては、Ａｌ、Ｔｉ、Ｃｒ、Ｎｉ、Ｃｕ、Ｍｏ、Ｐｄ、Ｗ、Ｐｔ、若しくはＡｕのいずれか、又はこれらの合金を適用することができる。金属パターンにはボンディング用の金属パッドを含む。
【００１７】
実施の形態１と異なる点は、ＺｎＯ透明電極１２の上面ばかりでなく、側面もＭｇを添加したＺｎＯ膜で被覆されていることである。このようなＧａＮ系半導体発光素子は、実施の形態１と同様の工程で作製することができる。
【００１８】
図３に示すように、ＺｎＯ透明電極１２の上面ばかりでなく、側面もＭｇを添加したＺｎＯ膜で被覆されているため、光透過性と導電性を確保しつつ、Ｍｇを添加したＺｎＯ膜及びＺｎＯ透明電極が水分によって侵食されることをより効果的に防止することができる。また、Ｍｇを添加したＺｎＯ膜上に金属パターンをエッチングで形成する際にも、一層の耐酸性の向上によりＭｇを添加したＺｎＯ膜及びＺｎＯ透明電極を保護することができる。
【００１９】
本実施の形態では、サファイヤ基板１５の上面にＧａＮ系半導体層を形成したが、サファイヤ基板１５に替えて、導電性基板上にＧａＮ系半導体発光素子を形成してもよい。また、ＧａＮ系半導体層の上面に透明電極を形成した例を説明したが、ＧａＮ系半導体層ばかりでなく、半導体発光素子となる半導体層や、さらには、液晶等の電子素子にＺｎＯ透明電極を形成する素子には本願発明を適用することができる。
【００２０】
【発明の効果】
以上説明したように、本願発明によればイオンを含む水分による劣化に強く耐酸性、耐アルカリ性のある透明電極膜を実現することができる。
【図面の簡単な説明】
【図１】本願発明の基礎をなす、Ｍｇを添加したＺｎＯの耐酸性を測定したグラフである。
【図２】本願発明をＧａＮ系半導体発光素子に適用した実施の形態を示す構成図であって、Ｍｇを添加したＺｎＯ膜でＺｎＯ透明電極の上面を被覆した透明電極を説明する図である。
【図３】本願発明をＧａＮ系半導体発光素子に適用した実施の形態を示す構成図であって、Ｍｇを添加したＺｎＯ膜でＺｎＯ透明電極の表面を被覆した透明電極を説明する図である。
【図４】従来の白色光源として使用する発光素子モジュールの構成を説明する図である。
【符号の説明】
１１：Ｍｇを添加したＺｎＯ膜
１２：ＺｎＯ透明電極
１３：金属パターン
１４：金属電極
１５：サファイヤ基板
２０：ＧａＮ系半導体層
２１：ｐ型ＧａＮ系半導体層
２２：発光層
２３：ｎ型ＧａＮ系半導体層[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a transparent electrode film which is resistant to deterioration due to water containing ions and has acid resistance and alkali resistance.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, in order to emit light from an electrode side, a semiconductor light emitting element such as an LED or a liquid crystal is formed of a transparent material and emits light through a transparent electrode (for example, see Patent Document 1). ZnO, which is a material for a transparent electrode, is easily eroded by acid or alkali, and the reliability of the electrode may be lost due to the influence of moisture containing ions. Further, when used as a white light source utilizing the light emission of an LED, the semiconductor light emitting element is covered with an epoxy resin mixed with a fluorescent substance. FIG. 4 shows a configuration of a light emitting element module used as a conventional white light source. In FIG. 4, reference numeral 51 denotes a semiconductor light emitting element, 52 denotes an epoxy resin, and 53 denotes a module substrate. As shown in FIG. 4, the entire semiconductor light emitting element 51 mounted on a module substrate 53 of the light emitting element module is covered with an epoxy resin 52. By the light emission from the semiconductor light emitting element 51, the fluorescent substance mixed in the epoxy resin 52 is excited to emit white light. However, the epoxy resin 52 easily penetrates moisture, and the moisture contained in the epoxy resin 52 and moisture from the outside infiltrate, and particularly, the moisture containing ions shows an acid or an alkali, so that the semiconductor light emitting element The used ZnO transparent electrode may be eroded. This is probably due to the high ionization tendency of Zn.
[0003]
[Patent Document 1]
JP-A-11-70610 (Pages (3) to (4), FIG. 3)
[0004]
[Problems to be solved by the invention]
An object of the present invention is to provide a transparent electrode film that is resistant to deterioration due to intrusion of water containing ions in order to solve such a problem.
[0005]
[Means for Solving the Problems]
The inventor has found that when Mg is added to ZnO used as a transparent electrode of a light emitting element, acid resistance is dramatically improved. FIG. 1 shows the results of an experiment in which the acid resistance of a ZnO transparent electrode to which Mg was added using the amount of Mg as a parameter was measured. In FIG. 1, the horizontal axis indicates the etching time, the vertical axis indicates the etching amount, and the parameter of Mg indicates the weight% of Mg added to ZnO. In this experiment, the ZnO transparent electrode was immersed in an acidic liquid having a volume ratio of 100 parts of water to one part of 35% hydrochloric acid, and the etching amount was measured. From FIG. 1, it can be seen that when Mg is added in an amount of 12 mol% or more as compared with a ZnO transparent electrode in which Mg is not added, the etching amount is reduced to less than a quarter. This indicates that ZnO to which Mg is added at the same time can prevent the deterioration of reliability even with respect to moisture containing ions.
[0006]
Then, in order to achieve the above-mentioned object, the present invention is a transparent electrode in which the surface of a transparent electrode mainly composed of ZnO is coated with a ZnO film to which Mg is added.
According to the present invention, it is possible to enhance the acid resistance of the transparent electrode and prevent the reliability of the transparent electrode from deteriorating against moisture containing ions.
[0007]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
(Embodiment 1)
FIG. 2 shows a first embodiment of the present invention. FIG. 2 shows an example in which the present invention is applied to a GaN-based semiconductor light emitting device. In FIG. 2, 11 is a ZnO film to which Mg is added, 12 is a ZnO transparent electrode, 13 is a metal pattern, 14 is a metal electrode, 15 is a sapphire substrate, 21 is a p-type GaN-based semiconductor layer, 22 is a light emitting layer, and 23 is a light emitting layer. An n-type GaN-based semiconductor layer 20 is a GaN-based semiconductor layer including a p-type GaN-based semiconductor layer 21, a light-emitting layer 22, and an n-type GaN-based semiconductor layer 23. In the present application, the GaN-based semiconductor layer means a In p Ga q Al r N ( p + q + r = 1, p ≧ 0, q ≧ 0, r ≧ 0) semiconductor layer comprising at least one layer of.
[0008]
In such a GaN-based semiconductor light-emitting device, first, an n-type GaN-based semiconductor layer 23 is formed on the upper surface of the sapphire substrate 15 by MOCVD or the like. The n-type GaN-based semiconductor layer 23 is preferably composed of n-type GaN and a GaN buffer layer. The n-type GaN-based semiconductor layer 23 may be formed by ELO (Epitaxial Lateral Overgrowth). The light emitting layer 22 is formed on the upper surface of the n-type GaN-based semiconductor layer 23. Emitting layer 22 is composed of In x Ga 1-x N ( 0 ≦ x <1) or / and Al y Ga 1-y N ( 0 ≦ y <1). The light-emitting layer 22 may be formed by adjusting the ratio of In to Ga with In x Ga 1-x N / GaN (0 ≦ x <1) or by adjusting Aly Ga 1-y N / GaN (0 ≦ y < In 1), the ratio between Al and Ga may be adjusted to form a multiple quantum well structure. Furthermore, In and In in p Ga q Al r N / GaN (p + q + r = 1, p ≧ 0, q ≧ 0, r ≧ 0), Ga and may be a multiple quantum well structure by adjusting the ratio of Al . Furthermore, to the layers may be provided to a light emitting n-type on the side of the n-type GaN-based semiconductor layer of the layer 22 Al y Ga 1-y N (0 ≦ y <1), p -type GaN-based semiconductor light-emitting layer 22 layer may be provided consisting of p-type Al y Ga 1-y N ( 0 ≦ y <1) on the side of the layer.
[0009]
Next, the p-type GaN-based semiconductor layer 21 is formed on the upper surface of the light emitting layer 22. After the ZnO transparent electrode 12 is formed on the upper surface of the p-type GaN-based semiconductor layer 21, the ZnO transparent electrode 12, the p-type GaN-based semiconductor layer 21, the light-emitting layer 22, and a part of the n-type GaN-based semiconductor layer 23 are etched. To remove. The n-type GaN-based semiconductor layer 23 is etched partway through the layer. Next, a MgO-added ZnO film 11 is formed, and a metal electrode 14 is formed on the exposed upper surface of the n-type GaN-based semiconductor layer 23, and a metal pattern 13 is formed on the upper surface of the Mg-added ZnO film 11 by a vapor deposition method or a sputtering method. To form.
[0010]
Alternatively, after forming the p-type GaN-based semiconductor layer 21 on the upper surface of the light-emitting layer 22, a part of the p-type GaN-based semiconductor layer 21, the light-emitting layer 22, and a part of the n-type GaN-based semiconductor layer 23 are removed by etching. The n-type GaN-based semiconductor layer 23 is etched partway through the layer. Next, a ZnO transparent electrode 12 is formed on the upper surface of the p-type GaN-based semiconductor layer 21, and a ZnO film 11 to which Mg is added is further formed on the upper surface. The metal electrode 14 is formed on the exposed upper surface of the n-type GaN-based semiconductor layer 23, and the metal pattern 13 is formed on the upper surface of the MgO-added ZnO film 11 by vapor deposition or sputtering.
[0011]
The MgO-added ZnO film 11 is formed by a sputtering method, an ion plating method, or the like using a target obtained by firing a mixture of MgO and ZnO powder. Further, metal Mg and metal Zn are heated by a heater and supplied as molecular beams, and oxygen can be formed by a vapor deposition method similar to molecular beam epitaxy supplied by an RF radical cell.
[0012]
Further, as a material for forming the metal pattern 13, any of Al, Ti, Cr, Ni, Cu, Mo, Pd, W, Pt, and Au, or an alloy thereof can be applied. The metal pattern includes a metal pad for bonding.
[0013]
When the ZnO transparent electrode is covered with the MgO-added ZnO film as described in this embodiment, it is possible to prevent the Mg-added ZnO film and the ZnO transparent electrode from being eroded by moisture. Since MgO-added ZnO has the same light transmittance and conductivity as ZnO, light emitted from a part of the GaN-based semiconductor layer passes through the Mg-added ZnO film and also contains Mg. Conduction between the metal pattern 13 formed on the upper surface of the ZnO film 11 and the ZnO transparent electrode 12 is also ensured.
[0014]
In the present embodiment, the GaN-based semiconductor layer is formed on the upper surface of the sapphire substrate 15, but a GaN-based semiconductor light emitting device may be formed on a conductive substrate instead of the sapphire substrate 15. In addition, the example in which the transparent electrode is formed on the upper surface of the GaN-based semiconductor layer has been described. However, not only the GaN-based semiconductor layer but also a semiconductor layer serving as a semiconductor light emitting element or a ZnO transparent electrode such as an electronic element such as a liquid crystal. The present invention can be applied to an element for forming an electrode.
[0015]
(Embodiment 2)
FIG. 3 shows a second embodiment of the present invention. FIG. 3 shows an example in which the present invention is applied to a GaN-based semiconductor light emitting device. In FIG. 3, 11 is a ZnO film to which Mg is added, 12 is a ZnO transparent electrode, 13 is a metal pattern, 14 is a metal electrode, 15 is a sapphire substrate, 21 is a p-type GaN-based semiconductor layer, 22 is a light emitting layer, and 23 is a light emitting layer. An n-type GaN-based semiconductor layer 20 is a GaN-based semiconductor layer including a p-type GaN-based semiconductor layer 21, a light-emitting layer 22, and an n-type GaN-based semiconductor layer 23.
[0016]
As a material for forming the metal pattern 13, any one of Al, Ti, Cr, Ni, Cu, Mo, Pd, W, Pt, and Au, or an alloy thereof can be used. The metal pattern includes a metal pad for bonding.
[0017]
The difference from the first embodiment is that not only the upper surface but also the side surfaces of the ZnO transparent electrode 12 are covered with a ZnO film to which Mg is added. Such a GaN-based semiconductor light emitting device can be manufactured by the same steps as in the first embodiment.
[0018]
As shown in FIG. 3, not only the upper surface but also the side surface of the ZnO transparent electrode 12 is covered with the ZnO film to which Mg is added. It is possible to more effectively prevent the ZnO transparent electrode from being eroded by moisture. Further, even when a metal pattern is formed on the ZnO film to which Mg is added by etching, the ZnO film to which Mg is added and the ZnO transparent electrode can be protected by further improving the acid resistance.
[0019]
In the present embodiment, the GaN-based semiconductor layer is formed on the upper surface of the sapphire substrate 15, but a GaN-based semiconductor light emitting device may be formed on a conductive substrate instead of the sapphire substrate 15. Also, the example in which the transparent electrode is formed on the upper surface of the GaN-based semiconductor layer has been described. However, not only the GaN-based semiconductor layer but also a semiconductor layer serving as a semiconductor light emitting element, and further, a ZnO transparent electrode is used for an electronic element such as a liquid crystal. The present invention can be applied to an element to be formed.
[0020]
【The invention's effect】
As described above, according to the present invention, it is possible to realize a transparent electrode film that is resistant to deterioration due to water containing ions and has acid resistance and alkali resistance.
[Brief description of the drawings]
FIG. 1 is a graph showing the acid resistance of MgO-added ZnO, which forms the basis of the present invention.
FIG. 2 is a configuration diagram showing an embodiment in which the present invention is applied to a GaN-based semiconductor light-emitting device, and is a diagram illustrating a transparent electrode in which the upper surface of a ZnO transparent electrode is covered with a ZnO film to which Mg is added.
FIG. 3 is a configuration diagram showing an embodiment in which the invention of the present application is applied to a GaN-based semiconductor light-emitting device, and is a diagram illustrating a transparent electrode in which the surface of a ZnO transparent electrode is covered with a ZnO film to which Mg is added.
FIG. 4 is a diagram illustrating a configuration of a light emitting element module used as a conventional white light source.
[Explanation of symbols]
11: ZnO film doped with Mg 12: ZnO transparent electrode 13: metal pattern 14: metal electrode 15: sapphire substrate 20: GaN-based semiconductor layer 21: p-type GaN-based semiconductor layer 22: light-emitting layer 23: n-type GaN-based semiconductor layer

Claims (1)

Ｍｇを添加したＺｎＯ膜でＺｎＯを主材料とした透明電極の表面を被覆した透明電極。A transparent electrode in which the surface of a transparent electrode mainly composed of ZnO is coated with a ZnO film to which Mg is added.
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US20040166379A1 (en) 2004-08-26
US7948003B2 (en) 2011-05-24

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