JP2010087283A - Semiconductor light emitting element - Google Patents

Semiconductor light emitting element Download PDF

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JP2010087283A
JP2010087283A JP2008255435A JP2008255435A JP2010087283A JP 2010087283 A JP2010087283 A JP 2010087283A JP 2008255435 A JP2008255435 A JP 2008255435A JP 2008255435 A JP2008255435 A JP 2008255435A JP 2010087283 A JP2010087283 A JP 2010087283A
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conductive film
layer
semiconductor layer
nitride semiconductor
light emitting
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JP5161720B2 (en
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Akihiko Murai
章彦 村井
Kazuyuki Yamae
和幸 山江
Tomoya Iwahashi
友也 岩橋
Hiroshi Fukushima
博司 福島
Masaharu Yasuda
正治 安田
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Panasonic Electric Works Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element improving reliability while improving light extraction efficiency. <P>SOLUTION: This semiconductor light emitting element includes: a transparent conductive film 9 laminated between a p-type nitride semiconductor layer 6 and an anode electrode 7 and on the side of the p-type nitride semiconductor layer 6 opposite to a nitride light emitting layer 5 side, and formed of GZO (ZnO doped with Ga) film small in a refractive index relative to the p-type nitride semiconductor layer 6; and a reflecting conductive film 11 formed on the side of the conductive film 9 opposite to the p-type nitride semiconductor layer 6 side, having conductivity, and formed of a Ag film reflecting light emitted from the nitride light emitting layer 5; wherein an adhesive conductive film 10 transparent for light emitted from the nitride light emitting layer 5, having conductivity, enhancing adhesion force of the reflecting conductive film 11 to the transparent conductive film 9 side, and formed of a Pt film is interposed between the transparent conductive film 9 and the reflecting conductive film 11. In this case, the film thickness of the Pt film constituting the adhesive conductive film 10 is set ≤0.5 nm. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、発光層が窒化物半導体材料により形成された半導体発光素子に関するものである。   The present invention relates to a semiconductor light emitting device in which a light emitting layer is formed of a nitride semiconductor material.

従来から、発光層がＧａＮ、ＩｎＧａＮ、ＡｌＧａＮ、ＩｎＡｌＧａＮなどの窒化物半導体材料により形成されるとともに厚み方向の一表面側にアノード電極およびカソード電極が形成され、実装基板に対してフリップチップ実装して用いることが可能な半導体発光素子において、光取り出し効率を向上するためにアノード電極およびカソード電極での光吸収を抑制するようにした構造が各所で研究開発されている（例えば、特許文献１）。   Conventionally, a light emitting layer is formed of a nitride semiconductor material such as GaN, InGaN, AlGaN, InAlGaN, and an anode electrode and a cathode electrode are formed on one surface side in the thickness direction. In a semiconductor light emitting device that can be used, a structure in which light absorption at an anode electrode and a cathode electrode is suppressed in order to improve light extraction efficiency has been researched and developed in various places (for example, Patent Document 1).

ここにおいて、上記特許文献１に開示された半導体発光素子は、図５に示すように、サファイア基板からなる透光性基板１’の一表面側に形成されたＧａＮ層からなるバッファ層２’と、バッファ層２’上に形成されたノンドープＧａＮ層からなるノンドープ窒化物半導体層３’と、ノンドープ窒化物半導体層３’上に形成されたｎ形ＧａＮ層からなるｎ形窒化物半導体層４’と、ｎ形窒化物半導体層４’上に形成され量子井戸構造を有する窒化物発光層５’と、窒化物発光層５’上に形成されたｐ形ＧａＮ層からなるｐ形窒化物半導体層６’と、ｐ形窒化物半導体層６’の表面側に形成されたアノード電極７’と、ｎ形窒化物半導体層４’における透光性基板１’側とは反対の表面側に形成されたカソード電極８’とを備え、ｐ形窒化物半導体層６’とアノード電極７’との間に、ｐ形窒化物半導体層６’における窒化物発光層５’側とは反対側に積層されｐ形窒化物半導体層よりも屈折率が小さなＺｎＯ膜からなる透明導電膜９’と、透明導電膜９’におけるｐ形窒化物半導体層６’側とは反対側に形成され導電性を有するとともに窒化物発光層５’から放射された光を反射するＡｇ膜からなる反射導電膜１１’とを備えている。   Here, as shown in FIG. 5, the semiconductor light emitting device disclosed in Patent Document 1 includes a buffer layer 2 ′ made of a GaN layer formed on one surface side of a translucent substrate 1 ′ made of a sapphire substrate, and The non-doped nitride semiconductor layer 3 ′ composed of a non-doped GaN layer formed on the buffer layer 2 ′ and the n-type nitride semiconductor layer 4 ′ composed of an n-type GaN layer formed on the non-doped nitride semiconductor layer 3 ′. A p-type nitride semiconductor layer comprising a nitride light-emitting layer 5 ′ having a quantum well structure formed on the n-type nitride semiconductor layer 4 ′ and a p-type GaN layer formed on the nitride light-emitting layer 5 ′. 6 ′, an anode electrode 7 ′ formed on the surface side of the p-type nitride semiconductor layer 6 ′, and a surface side opposite to the translucent substrate 1 ′ side in the n-type nitride semiconductor layer 4 ′. Cathode electrode 8 'and p-type nitride half ZnO is laminated between the body layer 6 'and the anode electrode 7' on the opposite side of the p-type nitride semiconductor layer 6 'from the nitride light-emitting layer 5' side and has a smaller refractive index than the p-type nitride semiconductor layer. A transparent conductive film 9 ′ made of a film, and formed on the opposite side of the transparent conductive film 9 ′ to the p-type nitride semiconductor layer 6 ′ side, has conductivity and reflects light emitted from the nitride light emitting layer 5 ′ And a reflective conductive film 11 ′ made of an Ag film.

図５に示した構成の半導体発光素子では、アノード電極７’とカソード電極８’との間に順方向バイアス電圧を印加することにより窒化物発光層５’に注入された電子とホールとが再結合することで発光する。ここで、図５に示した構成の半導体発光素子は、実装基板にフリップチップ実装し透光性基板１’の他表面を光取り出し面として用いられるものであり、窒化物発光層５’からｎ形窒化物半導体層４’側へ放射された光が透光性基板１’を通して光取り出し面から出射されるとともに、ｐ形窒化物半導体層６’側へ放射された光の一部がｐ形窒化物半導体層６’と透明導電膜９’との界面で両者の屈折率差に起因してフレネル反射されて光取り出し面から出射され、透明導電膜９’を透過した光が反射導電膜１１’で反射されて光取り出し面から出射されることとなるので、光取り出し効率を高めることができる。
特開２００５−４５０３８号公報 In the semiconductor light emitting device having the configuration shown in FIG. 5, by applying a forward bias voltage between the anode electrode 7 ′ and the cathode electrode 8 ′, electrons and holes injected into the nitride light emitting layer 5 ′ are regenerated. Emits light when combined. Here, the semiconductor light emitting device having the configuration shown in FIG. 5 is flip-chip mounted on a mounting substrate and the other surface of the translucent substrate 1 ′ is used as a light extraction surface. Light emitted to the side of the nitride semiconductor layer 4 ′ is emitted from the light extraction surface through the translucent substrate 1 ′, and part of the light emitted to the side of the p-type nitride semiconductor layer 6 ′ is p-type. The light reflected by the Fresnel reflection at the interface between the nitride semiconductor layer 6 ′ and the transparent conductive film 9 ′ due to the difference in refractive index between them and emitted from the light extraction surface and transmitted through the transparent conductive film 9 ′. Since it is reflected by 'and emitted from the light extraction surface, the light extraction efficiency can be increased.
JP-A-2005-45038

しかしながら、図５に示した構成の半導体発光素子では、透明導電膜９’と反射導電膜１１’との密着性が低いので、実装基板にフリップチップ実装する際や当該フリップチップ実装後に透明導電膜９’から反射導電膜１１’が剥離してしまい、光出力特性が低下してしまうという問題があった。   However, in the semiconductor light emitting device having the configuration shown in FIG. 5, since the adhesion between the transparent conductive film 9 ′ and the reflective conductive film 11 ′ is low, the transparent conductive film is used when flip chip mounting is performed on the mounting substrate or after the flip chip mounting. There was a problem that the reflective conductive film 11 ′ peeled off from 9 ′ and the light output characteristics deteriorated.

本発明は上記事由に鑑みて為されたものであり、その目的は、光取り出し効率の向上を図りつつ信頼性の向上を図れる半導体発光素子を提供することにある。   The present invention has been made in view of the above reasons, and an object of the present invention is to provide a semiconductor light emitting device capable of improving reliability while improving light extraction efficiency.

請求項１の発明は、ｎ形窒化物半導体層と窒化物発光層とｐ形窒化物半導体層との積層構造を有し、ｐ形窒化物半導体層における窒化物発光層側とは反対側にアノード電極が形成されるとともに、ｎ形窒化物半導体層における窒化物発光層の積層側にカソード電極が形成された半導体発光素子であって、ｐ形窒化物半導体層とアノード電極との間に、ｐ形窒化物半導体層における窒化物発光層側とは反対側に積層されｐ形窒化物半導体層よりも屈折率が小さな透明導電膜と、透明導電膜におけるｐ形窒化物半導体層側とは反対側に形成され導電性を有するとともに窒化物発光層から放射された光を反射する反射導電膜とを備え、透明導電膜と反射導電膜との間に、窒化物発光層から放射される光に対して透明であるとともに導電性を有し且つ透明導電膜側への反射導電膜の接着力を高める接着導電膜を介在させてなることを特徴とする。   The invention of claim 1 has a laminated structure of an n-type nitride semiconductor layer, a nitride light-emitting layer, and a p-type nitride semiconductor layer, on the opposite side of the p-type nitride semiconductor layer from the nitride light-emitting layer side. A semiconductor light emitting device in which an anode electrode is formed and a cathode electrode is formed on the nitride light emitting layer stack side of the n type nitride semiconductor layer, and between the p type nitride semiconductor layer and the anode electrode, A transparent conductive film laminated on the opposite side of the p-type nitride semiconductor layer to the nitride light emitting layer side and having a refractive index smaller than that of the p-type nitride semiconductor layer, and opposite to the p-type nitride semiconductor layer side of the transparent conductive film A reflective conductive film that is electrically conductive and reflects light emitted from the nitride light-emitting layer, and between the transparent conductive film and the reflective conductive film, the light emitted from the nitride light-emitting layer. Transparent and conductive, and By interposing adhesive conductive film to enhance the adhesion of the reflective conductive film to transparent conductive film side, characterized by comprising.

この発明によれば、ｐ形窒化物半導体層における窒化物発光層側とは反対側に積層されｐ形窒化物半導体層よりも屈折率が小さな透明導電膜と、透明導電膜におけるｐ形窒化物半導体層側とは反対側に形成され導電性を有するとともに窒化物発光層から放射された光を反射する反射導電膜とを備えているので、光取り出し効率の向上を図れ、しかも、透明導電膜と反射導電膜との間に、窒化物発光層から放射される光に対して透明であるとともに導電性を有し且つ透明導電膜側への反射導電膜の接着力を高める接着導電膜を介在させてあるので、光取り出し効率の低下を抑制しつつ透明導電膜側への反射導電膜の接着力を高めることができ、信頼性を向上できる。   According to this invention, the p-type nitride semiconductor layer is laminated on the side opposite to the nitride light emitting layer side and has a refractive index smaller than that of the p-type nitride semiconductor layer, and the p-type nitride in the transparent conductive film A reflective conductive film which is formed on the side opposite to the semiconductor layer side and has conductivity and reflects light emitted from the nitride light emitting layer is provided, so that the light extraction efficiency can be improved, and the transparent conductive film An adhesive conductive film that is transparent to the light emitted from the nitride light emitting layer and has conductivity and increases the adhesion of the reflective conductive film to the transparent conductive film side is interposed between the conductive film and the reflective conductive film Therefore, the adhesive force of the reflective conductive film to the transparent conductive film side can be increased while suppressing a decrease in light extraction efficiency, and the reliability can be improved.

請求項２の発明は、請求項１の発明において、前記透明導電膜の材料は、ＧＺＯ、ＡＺＯ、ＩＴＯの群から選択されることを特徴とする。   According to a second aspect of the invention, in the first aspect of the invention, the material of the transparent conductive film is selected from the group of GZO, AZO, and ITO.

この発明によれば、前記ｐ形窒化物半導体層と前記透明導電膜とのオーミック接触を得ることができる。   According to this invention, ohmic contact between the p-type nitride semiconductor layer and the transparent conductive film can be obtained.

請求項３の発明は、請求項１又は２の発明において、前記反射導電膜の材料は、Ａｇであることを特徴とする。   According to a third aspect of the present invention, in the first or second aspect of the present invention, the material of the reflective conductive film is Ag.

この発明によれば、前記反射導電膜の材料がＡｌである場合に比べて、前記窒化物発光層から放射される光に対する前記反射導電膜の反射率を高めることができる。   According to this invention, compared with the case where the material of the said reflective conductive film is Al, the reflectance of the said reflective conductive film with respect to the light radiated | emitted from the said nitride light emitting layer can be raised.

請求項４の発明は、請求項１乃至３の発明において、前記接着導電膜の材料は、Ｐｔ、Ｔｉ、Ａｌ、Ｎｉ、Ｒｈ、Ｇａ２Ｏ３、Ｉｎ２Ｏ３の群から選択されることを特徴とする。 According to a fourth aspect of the present invention, in the first to third aspects of the invention, the material of the adhesive conductive film is selected from the group of Pt, Ti, Al, Ni, Rh, Ga 2 O 3 , and In 2 O 3. It is characterized by.

この発明によれば、前記接着導電膜の膜厚を適宜設定することにより、光取り出し効率の低下を抑制しつつ前記透明導電膜側への前記反射導電膜の接着力を高めることができる。   According to this invention, by appropriately setting the film thickness of the adhesive conductive film, it is possible to increase the adhesive force of the reflective conductive film to the transparent conductive film side while suppressing a decrease in light extraction efficiency.

請求項５の発明は、請求項１乃至４の発明において、前記ｎ形窒化物半導体層と前記カソード電極との間に、前記ｎ形窒化物半導体層における前記窒化物発光層の積層側に形成され前記ｎ形窒化物半導体層よりも屈折率が小さな透明導電膜と、透明導電膜における前記ｎ形窒化物半導体層側とは反対側に形成され導電性を有するとともに前記窒化物発光層から放射された光を反射する反射導電膜とを備え、透明導電膜と反射導電膜との間に、窒化物発光層から放射される光に対して透明であるとともに導電性を有し且つ透明導電膜側への反射導電膜の接着力を高める接着導電膜を介在させてなることを特徴とする。   According to a fifth aspect of the present invention, in the first to fourth aspects of the present invention, the n-type nitride semiconductor layer is formed between the n-type nitride semiconductor layer and the nitride light-emitting layer between the n-type nitride semiconductor layer and the cathode electrode. A transparent conductive film having a refractive index smaller than that of the n-type nitride semiconductor layer, and formed on the opposite side of the transparent conductive film from the n-type nitride semiconductor layer side, having conductivity and emitting from the nitride light-emitting layer. A transparent conductive film that is transparent to the light emitted from the nitride light-emitting layer and has conductivity between the transparent conductive film and the reflective conductive film. It is characterized by interposing an adhesive conductive film that enhances the adhesive strength of the reflective conductive film to the side.

この発明によれば、前記ｎ形窒化物半導体層における前記窒化物発光層の積層側に形成され前記ｎ形窒化物半導体層よりも屈折率が小さな透明導電膜と、透明導電膜における前記ｎ形窒化物半導体層側とは反対側に形成され導電性を有するとともに前記窒化物発光層から放射された光を反射する反射導電膜とを備えているので、光取り出し効率の向上を図れ、しかも、透明導電膜と反射導電膜との間に、窒化物発光層から放射される光に対して透明であるとともに導電性を有し且つ透明導電膜側への反射導電膜の接着力を高める接着導電膜を介在させてあるので、光取り出し効率の低下を抑制しつつ透明導電膜側への反射導電膜の接着力を高めることができ、信頼性を向上できる。   According to this invention, the transparent conductive film formed on the laminated side of the nitride light emitting layer in the n-type nitride semiconductor layer and having a refractive index smaller than that of the n-type nitride semiconductor layer, and the n-type in the transparent conductive film Since it is provided on the opposite side to the nitride semiconductor layer side and has conductivity and a reflective conductive film that reflects the light emitted from the nitride light emitting layer, the light extraction efficiency can be improved, Adhesive conductivity between the transparent conductive film and the reflective conductive film, which is transparent to the light emitted from the nitride light emitting layer, has conductivity, and increases the adhesion of the reflective conductive film to the transparent conductive film side Since the film is interposed, the adhesive force of the reflective conductive film to the transparent conductive film side can be increased while suppressing a decrease in light extraction efficiency, and the reliability can be improved.

請求項１の発明では、光取り出し効率の向上を図りつつ信頼性を向上できるという効果がある。   In the invention of claim 1, there is an effect that the reliability can be improved while improving the light extraction efficiency.

（実施形態１）
本実施形態の半導体発光素子は、図１に示すように、ＧａＮ基板からなる透光性基板１の一表面側（図１における下面側）にｎ形ＧａＮ層からなるｎ形窒化物半導体層４が形成され、ｎ形窒化物半導体層４上に量子井戸構造を有する窒化物発光層５が形成され、窒化物発光層５上にｐ形ＧａＮ層からなるｐ形窒化物半導体層６が形成されている。要するに、本実施形態の半導体発光素子は、透光性基板１の上記一表面側にｎ形窒化物半導体層４と窒化物発光層５とｐ形窒化物半導体層６との積層構造を有している。なお、ｎ形窒化物半導体層４、窒化物発光層５、およびｐ形窒化物半導体層６は、透光性基板１の上記一表面側にＭＯＶＰＥ法のようなエピタキシャル成長技術を利用して成膜するので、透光性基板１とｎ形窒化物半導体層４との間にバッファ層を適宜設けてもよい。また、ｎ形窒化物半導体層４、窒化物発光層５、およびｐ形窒化物半導体層６の結晶成長方法は、ＭＯＶＰＥ法に限定するものではなく、例えば、ハライド気相成長法（ＨＶＰＥ法）や、分子線エピタキシー法（ＭＢＥ法）などを採用してもよい。また、透光性基板１は、窒化物発光層５から放射される光に対して透明であればよく、例えば、サファイア基板、ＳｉＣ基板、ＺｎＯ基板などを採用してもよい。 (Embodiment 1)
As shown in FIG. 1, the semiconductor light emitting device of this embodiment includes an n-type nitride semiconductor layer 4 made of an n-type GaN layer on one surface side (the lower surface side in FIG. 1) of a light-transmitting substrate 1 made of a GaN substrate. The nitride light-emitting layer 5 having a quantum well structure is formed on the n-type nitride semiconductor layer 4, and the p-type nitride semiconductor layer 6 made of a p-type GaN layer is formed on the nitride light-emitting layer 5. ing. In short, the semiconductor light-emitting device of this embodiment has a laminated structure of the n-type nitride semiconductor layer 4, the nitride light-emitting layer 5, and the p-type nitride semiconductor layer 6 on the one surface side of the translucent substrate 1. ing. The n-type nitride semiconductor layer 4, the nitride light emitting layer 5, and the p-type nitride semiconductor layer 6 are formed on the one surface side of the translucent substrate 1 using an epitaxial growth technique such as MOVPE. Therefore, a buffer layer may be appropriately provided between the translucent substrate 1 and the n-type nitride semiconductor layer 4. Further, the crystal growth method of the n-type nitride semiconductor layer 4, the nitride light emitting layer 5, and the p-type nitride semiconductor layer 6 is not limited to the MOVPE method. For example, the halide vapor phase growth method (HVPE method) Alternatively, a molecular beam epitaxy method (MBE method) or the like may be employed. Moreover, the translucent substrate 1 should just be transparent with respect to the light radiated | emitted from the nitride light emitting layer 5, For example, a sapphire substrate, a SiC substrate, a ZnO substrate etc. may be employ | adopted.

また、本実施形態の半導体発光素子は、ｐ形窒化物半導体層６における窒化物発光層５側とは反対側にアノード電極７が形成されるとともに、ｎ形窒化物半導体層４における窒化物発光層５の積層側にカソード電極８が形成されている。ここで、カソード電極８は、透光性基板１の上記一表面側へｎ形窒化物半導体層４、窒化物発光層５、ｐ形窒化物半導体層６を順次成長させた後で、ｎ形窒化物半導体層４と窒化物発光層５とｐ形窒化物半導体層５との積層膜の所定領域をｐ形窒化物半導体層６の表面側からｎ形窒化物半導体層４の途中までエッチングすることにより露出させたｎ形窒化物半導体層４の表面に形成されている。   In the semiconductor light emitting device of this embodiment, the anode electrode 7 is formed on the opposite side of the p-type nitride semiconductor layer 6 to the nitride light emitting layer 5 side, and the nitride light emission in the n-type nitride semiconductor layer 4 is performed. A cathode electrode 8 is formed on the layer 5 stacking side. Here, the cathode electrode 8 is formed by sequentially growing the n-type nitride semiconductor layer 4, the nitride light-emitting layer 5, and the p-type nitride semiconductor layer 6 on the one surface side of the translucent substrate 1, and then forming the n-type A predetermined region of the laminated film of nitride semiconductor layer 4, nitride light emitting layer 5, and p-type nitride semiconductor layer 5 is etched from the surface side of p-type nitride semiconductor layer 6 to the middle of n-type nitride semiconductor layer 4. The n-type nitride semiconductor layer 4 is exposed on the surface.

ここにおいて、本実施形態の半導体発光素子では、アノード電極７とカソード電極８との間に順方向バイアス電圧を印加することにより、アノード電極７からｐ形窒化物半導体層６へホールが注入されるとともに、カソード電極８からｎ形窒化物半導体層４へ電子が注入され、窒化物発光層５に注入された電子とホールとが再結合することで発光する。   Here, in the semiconductor light emitting device of this embodiment, holes are injected from the anode electrode 7 into the p-type nitride semiconductor layer 6 by applying a forward bias voltage between the anode electrode 7 and the cathode electrode 8. At the same time, electrons are injected from the cathode electrode 8 into the n-type nitride semiconductor layer 4, and light is emitted by recombination of the electrons and holes injected into the nitride light emitting layer 5.

上述のｎ形窒化物半導体層４は、透光性基板１上に形成されたｎ形ＧａＮ層で構成してあるが、単層構造に限らず、多層構造でもよく、例えば、透光性基板１がサファイア基板の場合には、透光性基板１の上記一表面側にＡｌＮ層やＡｌＧａＮ層などからなるバッファ層を介して形成されたｎ形ＡｌＧａＮ層と、当該ｎ形ＡｌＧａＮ層上のｎ形ＧａＮ層とで構成してもよい。   The n-type nitride semiconductor layer 4 described above is composed of an n-type GaN layer formed on the translucent substrate 1, but is not limited to a single layer structure, and may be a multi-layer structure. For example, the translucent substrate When 1 is a sapphire substrate, an n-type AlGaN layer formed on the one surface side of the translucent substrate 1 via a buffer layer made of an AlN layer, an AlGaN layer, or the like, and an n-type on the n-type AlGaN layer You may comprise with a shape GaN layer.

また、窒化物発光層５は、ＧａＮ層からなる障壁層によりＩｎＧａＮ層からなる井戸層が挟まれた量子井戸構造を有しており、当該窒化物発光層５の発光ピーク波長が４５０ｎｍとなるようにＩｎＧａＮ層の組成を設定してあるが、発光ピーク波長は特に限定するものではない。なお、窒化物発光層５の量子井戸構造は単一量子井戸構造に限らず、多重量子井戸構造でもよい。また、窒化物発光層５は、必ずしも量子井戸構造を有している必要はなく、単層構造でもよい。また、窒化物発光層５の材料も窒化物半導体材料であればよく、所望の発光ピーク波長に応じて、例えば、ＡｌＩｎＧａＮ、ＡｌＩｎＮ、ＡｌＧａＮなどを適宜採用してもよい。   The nitride light-emitting layer 5 has a quantum well structure in which a well layer made of an InGaN layer is sandwiched by a barrier layer made of a GaN layer so that the emission peak wavelength of the nitride light-emitting layer 5 becomes 450 nm. However, the emission peak wavelength is not particularly limited. The quantum well structure of the nitride light emitting layer 5 is not limited to a single quantum well structure, and may be a multiple quantum well structure. The nitride light emitting layer 5 does not necessarily have a quantum well structure, and may have a single layer structure. Further, the material of the nitride light emitting layer 5 may be a nitride semiconductor material, and for example, AlInGaN, AlInN, AlGaN or the like may be appropriately employed according to a desired emission peak wavelength.

また、ｐ形窒化物半導体層６は、窒化物発光層５上に形成されたｐ形ＧａＮ層で構成してあるが、単層構造に限らず、多層構造でもよく、例えば、ｐ形ＡｌＧａＮ層からなる第１のｐ形半導体層と、第１のｐ形半導体層上に形成されたｐ形ＧａＮ層からなる第２のｐ形半導体層とで構成してもよい。   The p-type nitride semiconductor layer 6 is composed of a p-type GaN layer formed on the nitride light-emitting layer 5, but is not limited to a single layer structure, and may have a multilayer structure, for example, a p-type AlGaN layer. You may comprise by the 1st p-type semiconductor layer which consists of, and the 2nd p-type semiconductor layer which consists of a p-type GaN layer formed on the 1st p-type semiconductor layer.

また、アノード電極７は、後述の反射導電膜１１上のＡｕ層と当該Ａｕ層上のＴｉ層と当該Ｔｉ層上のＡｕ層との積層構造を有しており、最表面側のＡｕ層がｐパッド層を構成している。   The anode electrode 7 has a laminated structure of an Au layer on a reflective conductive film 11 described later, a Ti layer on the Au layer, and an Au layer on the Ti layer. A p-pad layer is formed.

また、カソード電極８は、ｎ形窒化物半導体層４上のＴｉ層と当該Ｔｉ層上のＡｕ層との積層構造を有しており、Ａｕ層がｎパッド層を構成している。ここで、ｎ形窒化物半導体層４上のＴｉ層は、ｎ形窒化物半導体層４に対するオーミックコンタクト層として設けてあるが、オーミックコンタクト層の材料は、例えば、Ｔｉ、Ｖ、Ａｌやこれらのいずれか一種類の金属を含む合金などを採用すればよい。   The cathode electrode 8 has a laminated structure of a Ti layer on the n-type nitride semiconductor layer 4 and an Au layer on the Ti layer, and the Au layer forms an n pad layer. Here, the Ti layer on the n-type nitride semiconductor layer 4 is provided as an ohmic contact layer with respect to the n-type nitride semiconductor layer 4, but the material of the ohmic contact layer is, for example, Ti, V, Al, or these An alloy containing any one kind of metal may be employed.

ところで、本実施形態の半導体発光素子は、ｐ形窒化物半導体層６とアノード電極７との間に、ｐ形窒化物半導体層６における窒化物発光層５側とは反対側に積層されｐ形窒化物半導体層６よりも屈折率が小さなＧＺＯ（ＧａをドープしたＺｎＯ）膜からなる透明導電膜９と、透明導電膜９におけるｐ形窒化物半導体層６側とは反対側に形成され導電性を有するとともに窒化物発光層５から放射された光を反射するＡｇ膜からなる反射導電膜１１とを備え、透明導電膜９と反射導電膜１１との間に、窒化物発光層５から放射される光に対して透明であるとともに導電性を有し且つ透明導電膜９側への反射導電膜１１の接着力を高めるＰｔ膜からなる接着導電膜１０を介在させてある。   By the way, the semiconductor light emitting device of this embodiment is laminated between the p-type nitride semiconductor layer 6 and the anode electrode 7 on the opposite side of the p-type nitride semiconductor layer 6 from the nitride light-emitting layer 5 side. A transparent conductive film 9 made of a GZO (Ga-doped ZnO) film having a refractive index smaller than that of the nitride semiconductor layer 6 and a conductive film formed on the opposite side of the transparent conductive film 9 from the p-type nitride semiconductor layer 6 side. And a reflective conductive film 11 made of an Ag film that reflects light emitted from the nitride light emitting layer 5, and is emitted from the nitride light emitting layer 5 between the transparent conductive film 9 and the reflective conductive film 11. An adhesive conductive film 10 made of a Pt film is interposed, which is transparent to the light to be transmitted and has conductivity and enhances the adhesive force of the reflective conductive film 11 to the transparent conductive film 9 side.

本実施形態では、透明導電膜９の材料としてＧＺＯを採用しているが、透明導電膜９の材料は、ＧＺＯ、ＡＺＯ（ＡｌをドーピングしたＺｎＯ）、ＩＴＯの群から選択される材料であればよく、当該群から選択される材料を採用することにより、当該透明導電膜９とｐ形窒化物半導体層６との接触をオーミック接触とすることができる。ここにおいて、透明導電膜９をＧＺＯ膜、ＡＺＯ膜、ＩＴＯ膜などにより構成する場合、当該透明導電膜９の形成にあたっては、Ｏ２ガスアシストの電子ビーム蒸着法により成膜した後、Ｎ２ガスとＯ２ガスとの混合ガス中でアニールするようにすればよく、このような形成方法を採用することにより、透明導電膜９の消衰係数を０．００１以下とすることができる。ここで、透明導電膜９をＧＺＯ膜により構成する場合のアニール条件の一例として、例えば、Ｎ２ガスとＯ２ガスとの体積比を９５：５、アニール温度を５００℃、アニール時間を５分とすればよい。なお、透明導電膜９の形成方法および形成条件は上述の例に限らないが、消衰係数ｋが０．００３以下となるように形成方法および形成条件を設定することが好ましい。 In the present embodiment, GZO is adopted as the material of the transparent conductive film 9, but the material of the transparent conductive film 9 is a material selected from the group of GZO, AZO (Al-doped ZnO), and ITO. Well, by adopting a material selected from the group, the contact between the transparent conductive film 9 and the p-type nitride semiconductor layer 6 can be made ohmic contact. Here, when the transparent conductive film 9 is composed of a GZO film, an AZO film, an ITO film, or the like, the transparent conductive film 9 is formed by forming an O 2 gas assisted electron beam evaporation method, and then N 2 gas. It is sufficient to anneal in a mixed gas of O 2 and O 2 gas. By adopting such a forming method, the extinction coefficient of the transparent conductive film 9 can be made 0.001 or less. Here, as an example of the annealing conditions when the transparent conductive film 9 is composed of a GZO film, for example, the volume ratio of N 2 gas to O 2 gas is 95: 5, the annealing temperature is 500 ° C., and the annealing time is 5 minutes. And it is sufficient. In addition, although the formation method and formation conditions of the transparent conductive film 9 are not restricted to the above-mentioned example, it is preferable to set a formation method and formation conditions so that the extinction coefficient k may be 0.003 or less.

また、反射導電膜１０の材料としてＡｇを採用しているが、Ａｇに限らず、例えば、Ａｌなどを採用してもよい。ただし、Ａｇを採用した方がＡｌを採用する場合に比べて、窒化物発光層５から放射される光（紫外光〜可視光）に対する反射導電膜１１の反射率を高めることができる。   Moreover, although Ag is adopted as the material of the reflective conductive film 10, it is not limited to Ag, and for example, Al may be adopted. However, the reflectance of the reflective conductive film 11 with respect to light (ultraviolet light to visible light) emitted from the nitride light emitting layer 5 can be increased when Ag is employed, compared to when Al is employed.

また、本実施形態では、接着導電膜１０を構成するＰｔ膜の膜厚を０．１ｎｍに設定してあるが、この膜厚に限定するものではない。ここで、Ｐｔ膜からなる接着導電膜１０の膜厚と当該接着導電膜１０の波長４５０ｎｍの光に対する光透過率との関係についてシミュレーションした結果を図２に示す。図２から分かるように、接着導電膜１０の膜厚が小さいほど当該接着導電膜１０の光透過率が高くなり、接着導電膜１０をＰｔ膜により構成する場合、接着導電膜１０の膜厚が０．６ｎｍになると、光透過率が９５％程度まで低下してしまい、Ａｇ膜からなる反射導電膜１１の光反射率と同程度の値となってしまうので、接着導電膜１０の膜厚は０．５ｎｍ以下に設定することが好ましい。また、接着導電膜１０の材料は、Ｐｔ、Ｔｉ、Ａｌ、Ｎｉ、Ｒｈ、Ｇａ２Ｏ３、Ｉｎ２Ｏ３の群から選択される材料であればよい。 In the present embodiment, the film thickness of the Pt film constituting the adhesive conductive film 10 is set to 0.1 nm, but is not limited to this film thickness. Here, the result of simulating the relationship between the film thickness of the adhesive conductive film 10 made of a Pt film and the light transmittance of the adhesive conductive film 10 with respect to light having a wavelength of 450 nm is shown in FIG. As can be seen from FIG. 2, the smaller the film thickness of the adhesive conductive film 10, the higher the light transmittance of the adhesive conductive film 10, and when the adhesive conductive film 10 is composed of a Pt film, the film thickness of the adhesive conductive film 10 is When the thickness is 0.6 nm, the light transmittance is reduced to about 95%, which is the same value as the light reflectance of the reflective conductive film 11 made of an Ag film. It is preferable to set it to 0.5 nm or less. The material of the adhesive conductive film 10 may be a material selected from the group of Pt, Ti, Al, Ni, Rh, Ga 2 O 3 , and In 2 O 3 .

また、本実施形態では、透明導電膜９を構成するＧＺＯ膜の膜厚を１０ｎｍに設定してあるが、この膜厚に限定するものではない。ここで、Ｐｔ膜からなる接着導電膜１０の膜厚を０．１ｎｍ、Ａｇ膜からなる反射導電膜１１の膜厚を１５０ｎｍとして、ＧＺＯ膜からなる透明導電膜９の消衰係数ｋを種々変化させて、透明導電膜９の膜厚と４５０ｎｍの光に対する光反射率との関係についてシミュレーションした結果を図３に示す。ここで、図３において、「イ」は消衰係数ｋ＝０の場合、「ロ」は消衰係数ｋ＝０．００１の場合、「ハ」は消衰係数ｋ＝０．００３の場合、をそれぞれ示している。   Moreover, in this embodiment, although the film thickness of the GZO film which comprises the transparent conductive film 9 is set to 10 nm, it is not limited to this film thickness. Here, the thickness of the adhesive conductive film 10 made of Pt film is 0.1 nm, the thickness of the reflective conductive film 11 made of Ag film is 150 nm, and the extinction coefficient k of the transparent conductive film 9 made of GZO film is variously changed. FIG. 3 shows a simulation result of the relationship between the film thickness of the transparent conductive film 9 and the light reflectance with respect to 450 nm light. Here, in FIG. 3, “I” is the extinction coefficient k = 0, “B” is the extinction coefficient k = 0.001, “C” is the extinction coefficient k = 0.003, Respectively.

図３から分かるように、透明導電膜９の消衰係数ｋが０の場合や０．００１の場合には、透明導電膜９の膜厚を１０ｎｍ〜２００ｎｍの範囲で変化させても、透明導電膜９を設けずにｐ形ＧａＮ層からなるｐ形窒化物半導体層６とＡｇ膜からなる反射導電膜との間にオーミックコンタクト層としてＰｔ膜（オーミック接触を得るために膜厚を０．３ｎｍとしてある）を設けた場合のシミュレーション結果（図３中には実線で示してある）に比べて反射率を高めることができることが分かり、消衰係数ｋが０．００３の場合でも透明導電膜９の膜厚を２００ｎｍ以下にすれば反射率を高めることができることが分かる。また、透明導電膜９の消衰係数ｋが０ないし０．００１の場合には、透明導電膜９の膜厚を１０ｎｍ以上とすることにより光反射率を向上できることが分かる。一方、透明導電膜９の消衰係数ｋが０．００３の場合には透明導電膜９の膜厚が大きくなるにつれて光反射率が低下することが分かる。したがって、透明導電膜９をＧＺＯ膜により構成する場合の膜厚は、ＧＺＯ膜の消衰係数ｋの再現性やばらつきなどを考慮すれば１０ｎｍ程度に設定することが好ましい。   As can be seen from FIG. 3, when the extinction coefficient k of the transparent conductive film 9 is 0 or 0.001, the transparent conductive film 9 can be made transparent even if the film thickness of the transparent conductive film 9 is changed in the range of 10 nm to 200 nm. A Pt film (with a film thickness of 0.3 nm for obtaining ohmic contact) between the p-type nitride semiconductor layer 6 made of p-type GaN layer and the reflective conductive film made of Ag film without providing the film 9. It can be seen that the reflectance can be increased as compared with the simulation result (shown by a solid line in FIG. 3) in the case of providing the transparent conductive film 9 even when the extinction coefficient k is 0.003. It can be seen that the reflectance can be increased if the film thickness is 200 nm or less. Further, it is understood that when the extinction coefficient k of the transparent conductive film 9 is 0 to 0.001, the light reflectance can be improved by setting the film thickness of the transparent conductive film 9 to 10 nm or more. On the other hand, when the extinction coefficient k of the transparent conductive film 9 is 0.003, it can be seen that the light reflectance decreases as the film thickness of the transparent conductive film 9 increases. Therefore, the film thickness when the transparent conductive film 9 is formed of a GZO film is preferably set to about 10 nm in consideration of reproducibility and variation of the extinction coefficient k of the GZO film.

また、本実施形態では、反射導電膜１１を構成するＡｇ膜の膜厚を１００ｎｍに設定してあるが、この膜厚は特に限定するものではなく、例えば、５０ｎｍ〜２００ｎｍ程度の範囲で適宜設定すればよい。   In the present embodiment, the thickness of the Ag film constituting the reflective conductive film 11 is set to 100 nm. However, the thickness is not particularly limited, and is appropriately set, for example, in the range of about 50 nm to 200 nm. do it.

ところで、上述のｎ形窒化物半導体層４をｎ形ＧａＮ層、窒化物発光層５をＧａＮ層からなる障壁層とＩｎＧａＮ層からなる井戸層とを有する量子井戸構造、ｐ形窒化物半導体層６をｐ形ＧａＮ層、透明導電膜９を膜厚が１０ｎｍのＧＺＯ膜、反射導電膜１１を膜厚が１００ｎｍのＡｇ膜、接着導電膜１０を膜厚が０．１ｎｍのＰｔ膜とした一実施例、透明導電膜９と反射導電膜１１との間に接着導電膜１０を介在させていない比較例、それぞれについて、反射導電膜１１の透明導電膜９側への接着力を評価するために引張接着強度を測定したところ、比較例では０．２５ｋＮ／ｃｍ２程度であったのに対して、実施例では２．６ｋＮ／ｃｍ２程度であり、接着力が大幅に向上していることが確認され、シェア強度も向上していることが確認された。 By the way, the above-described n-type nitride semiconductor layer 4 is an n-type GaN layer, and the nitride light-emitting layer 5 is a quantum well structure having a barrier layer made of a GaN layer and a well layer made of an InGaN layer, and a p-type nitride semiconductor layer 6. An implementation of a p-type GaN layer, a transparent conductive film 9 as a 10 nm thick GZO film, a reflective conductive film 11 as a 100 nm thick Ag film, and an adhesive conductive film 10 as a 0.1 nm thick Pt film For example, a comparative example in which the adhesive conductive film 10 is not interposed between the transparent conductive film 9 and the reflective conductive film 11, and tension was applied to evaluate the adhesive force of the reflective conductive film 11 to the transparent conductive film 9 side. was the adhesion strength was measured, in the comparative example whereas was about 0.25kN / cm 2, in the embodiment is about 2.6 kN / cm 2, confirming that the bond strength is significantly improved It is certain that the share strength has also improved. It has been.

以上説明した本実施形態の半導体発光素子では、ｐ形窒化物半導体層６における窒化物発光層５側とは反対側に積層されｐ形窒化物半導体層６よりも屈折率が小さな透明導電膜９と、透明導電膜９におけるｐ形窒化物半導体層６側とは反対側に形成され導電性を有するとともに窒化物発光層５から放射された光を反射する反射導電膜１１とを備えているので、光取り出し効率の向上を図れ、しかも、透明導電膜９と反射導電膜１１との間に、窒化物発光層５から放射される光に対して透明であるとともに導電性を有し且つ透明導電膜９側への反射導電膜１１の接着力を高める接着導電膜１０を介在させてあるので、光取り出し効率の低下を抑制しつつ透明導電膜９側への反射導電膜１１の接着力を高めることができ、信頼性を向上できる。   In the semiconductor light emitting device of the present embodiment described above, the transparent conductive film 9 that is stacked on the opposite side of the p-type nitride semiconductor layer 6 from the nitride light-emitting layer 5 side and has a smaller refractive index than the p-type nitride semiconductor layer 6. And a reflective conductive film 11 which is formed on the opposite side of the transparent conductive film 9 from the p-type nitride semiconductor layer 6 side and has conductivity and reflects light emitted from the nitride light emitting layer 5. The light extraction efficiency can be improved, and the transparent conductive film 9 and the reflective conductive film 11 are transparent to the light radiated from the nitride light emitting layer 5 and have conductivity and are transparent. Since the adhesive conductive film 10 that increases the adhesive strength of the reflective conductive film 11 to the film 9 side is interposed, the adhesive strength of the reflective conductive film 11 to the transparent conductive film 9 side is increased while suppressing a decrease in light extraction efficiency. Can improve reliability.

しかして、本実施形態の半導体発光素子を実装基板にフリップチップ実装する際や当該フリップチップ実装後に透明導電膜９と反射導電膜１１との間で剥離が生じるのを防止することができ、光出力特性が低下するのを防止することができる。   Therefore, when the semiconductor light emitting device of this embodiment is flip-chip mounted on the mounting substrate or after the flip-chip mounting, it is possible to prevent peeling between the transparent conductive film 9 and the reflective conductive film 11. It is possible to prevent the output characteristics from deteriorating.

（実施形態２）
本実施形態の半導体発光素子の基本構成は、実施形態１と略同じであり、図４に示すように、ｎ形窒化物半導体層４とカソード電極８との間に、ｎ形窒化物半導体層４における窒化物発光層５の積層側に形成されｎ形窒化物半導体層４よりも屈折率が小さな透明導電膜１９と、透明導電膜１９におけるｎ形窒化物半導体層４側とは反対側に形成され導電性を有するとともに窒化物発光層５から放射された光を反射する反射導電膜２１とを備え、透明導電膜１９と反射導電膜２１との間に、窒化物発光層５から放射される光に対して透明であるとともに導電性を有し且つ透明導電膜１９側への反射導電膜２１の接着力を高める接着導電膜２０を介在させてある点、カソード電極８が、反射導電膜２１上のＡｕ層と当該Ａｕ層上のＴｉ層と当該Ｔｉ層上のＡｕ層との積層構造を有しており、最表面側のＡｕ層がｎパッド層を構成している点が相違するだけである。なお、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 2)
The basic configuration of the semiconductor light emitting device of the present embodiment is substantially the same as that of the first embodiment, and an n-type nitride semiconductor layer is interposed between the n-type nitride semiconductor layer 4 and the cathode electrode 8 as shown in FIG. 4 is formed on the side where the nitride light emitting layer 5 is laminated and has a refractive index smaller than that of the n-type nitride semiconductor layer 4, and on the opposite side of the transparent conductive film 19 from the n-type nitride semiconductor layer 4 side. A reflective conductive film 21 that is formed and has conductivity and reflects light emitted from the nitride light emitting layer 5, and is emitted from the nitride light emitting layer 5 between the transparent conductive film 19 and the reflective conductive film 21. The cathode electrode 8 is made of a reflective conductive film in that an adhesive conductive film 20 is interposed that is transparent to the light to be transmitted and has conductivity and increases the adhesion of the reflective conductive film 21 to the transparent conductive film 19 side. Au layer on 21, Ti layer on the Au layer and T It has a stacked structure of the Au layer on the layer, but only that the Au layer on the outermost surface side constitutes the n pad layer is different. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

ところで、本実施形態では、透明導電膜１９、反射導電膜２１、接着導電膜２０の材料および膜厚を、実施形態１に説明した透明導電膜９、反射導電膜１１、接着導電膜１０それぞれと同じに設定してあり、カソード電極８の材料および膜厚をアノード電極７と同じに設定してあるので、ｎ形窒化物半導体層４とカソード電極８との間の層構造をｐ形窒化物半導体層６とアノード電極７との間の層構造を同じにすることができ、製造プロセスを増加させることなく製造することが可能となる。   By the way, in this embodiment, the materials and film thicknesses of the transparent conductive film 19, the reflective conductive film 21, and the adhesive conductive film 20 are the same as those of the transparent conductive film 9, the reflective conductive film 11, and the adhesive conductive film 10 described in the first embodiment. Since the material and film thickness of the cathode electrode 8 are set to be the same as those of the anode electrode 7, the layer structure between the n-type nitride semiconductor layer 4 and the cathode electrode 8 is p-type nitride. The layer structure between the semiconductor layer 6 and the anode electrode 7 can be made the same, and it becomes possible to manufacture without increasing the manufacturing process.

また、本実施形態の半導体発光素子では、ｎ形窒化物半導体層４とカソード電極８との間に、上述の透明導電膜１９と反射導電膜２１とを備えていることにより、光取り出し効率の向上を図れ、透明導電膜１９と反射導電膜２１との間に接着導電膜２０を介在させてあることにより、光取り出し効率の低下を抑制しつつ透明導電膜１９側への反射導電膜２１の接着力を高めることができ、信頼性が向上する。   Further, in the semiconductor light emitting device of this embodiment, the above-described transparent conductive film 19 and reflective conductive film 21 are provided between the n-type nitride semiconductor layer 4 and the cathode electrode 8, so that the light extraction efficiency can be improved. Since the adhesive conductive film 20 is interposed between the transparent conductive film 19 and the reflective conductive film 21, the reflective conductive film 21 on the transparent conductive film 19 side can be suppressed while suppressing a decrease in light extraction efficiency. Adhesion can be increased and reliability is improved.

なお、上記各実施形態では、透光性基板１の上記一表面側にｎ形窒化物半導体層４を形成しているが、透光性基板１の導電形がｎ形の場合（例えば、透光性基板１がｎ形ＧａＮ基板の場合）には、透光性基板１がｎ形窒化物半導体層４を兼ねる構成を採用してもよい。   In each of the above embodiments, the n-type nitride semiconductor layer 4 is formed on the one surface side of the translucent substrate 1. However, when the conductivity type of the translucent substrate 1 is n-type (for example, transparent substrate 1). In the case where the optical substrate 1 is an n-type GaN substrate), a configuration in which the translucent substrate 1 also serves as the n-type nitride semiconductor layer 4 may be employed.

実施形態１の半導体発光素子を示す概略断面図である。1 is a schematic cross-sectional view showing a semiconductor light emitting element of Embodiment 1. FIG. 同上の半導体発光素子の特性説明図である。It is characteristic explanatory drawing of a semiconductor light emitting element same as the above. 同上の半導体発光素子の特性説明図である。It is characteristic explanatory drawing of a semiconductor light emitting element same as the above. 実施形態２の半導体発光素子の概略断面図である。6 is a schematic cross-sectional view of a semiconductor light-emitting element according to Embodiment 2. FIG. 従来例を示す半導体発光素子の概略断面図である。It is a schematic sectional drawing of the semiconductor light-emitting device which shows a prior art example.

符号の説明Explanation of symbols

１ 透光性基板
４ ｎ形窒化物半導体層
５ 発光層
６ ｐ形窒化物半導体層
７ アノード電極
８ カソード電極
９ 透明導電膜
１０ 接着導電膜
１１ 反射導電膜 DESCRIPTION OF SYMBOLS 1 Translucent substrate 4 N-type nitride semiconductor layer 5 Light emitting layer 6 P-type nitride semiconductor layer 7 Anode electrode 8 Cathode electrode 9 Transparent conductive film 10 Adhesive conductive film 11 Reflective conductive film

Claims (5)

ｎ形窒化物半導体層と窒化物発光層とｐ形窒化物半導体層との積層構造を有し、ｐ形窒化物半導体層における窒化物発光層側とは反対側にアノード電極が形成されるとともに、ｎ形窒化物半導体層における窒化物発光層の積層側にカソード電極が形成された半導体発光素子であって、ｐ形窒化物半導体層とアノード電極との間に、ｐ形窒化物半導体層における窒化物発光層側とは反対側に積層されｐ形窒化物半導体層よりも屈折率が小さな透明導電膜と、透明導電膜におけるｐ形窒化物半導体層側とは反対側に形成され導電性を有するとともに窒化物発光層から放射された光を反射する反射導電膜とを備え、透明導電膜と反射導電膜との間に、窒化物発光層から放射される光に対して透明であるとともに導電性を有し且つ透明導電膜側への反射導電膜の接着力を高める接着導電膜を介在させてなることを特徴とする半導体発光素子。   It has a laminated structure of an n-type nitride semiconductor layer, a nitride light emitting layer, and a p-type nitride semiconductor layer, and an anode electrode is formed on the opposite side of the p-type nitride semiconductor layer to the nitride light emitting layer side. , A semiconductor light emitting device in which a cathode electrode is formed on the nitride light emitting layer stack side of the n type nitride semiconductor layer, and the p type nitride semiconductor layer is interposed between the p type nitride semiconductor layer and the anode electrode. A transparent conductive film laminated on the opposite side to the nitride light emitting layer side and having a refractive index smaller than that of the p-type nitride semiconductor layer, and formed on the opposite side of the transparent conductive film from the p-type nitride semiconductor layer side to have conductivity. And a reflective conductive film that reflects light emitted from the nitride light-emitting layer, and is transparent and conductive to light emitted from the nitride light-emitting layer between the transparent conductive film and the reflective conductive film To the transparent conductive film side The semiconductor light emitting element characterized by comprising by interposing an adhesive conductive film to enhance the adhesion of the conductive film. 前記透明導電膜の材料は、ＧＺＯ、ＡＺＯ、ＩＴＯの群から選択されることを特徴とする請求項１記載の半導体発光素子。   2. The semiconductor light emitting element according to claim 1, wherein the material of the transparent conductive film is selected from the group of GZO, AZO, and ITO. 前記反射導電膜の材料は、Ａｇであることを特徴とする請求項１又は２記載の半導体発光素子。   The semiconductor light-emitting element according to claim 1, wherein the material of the reflective conductive film is Ag. 前記接着導電膜の材料は、Ｐｔ、Ｔｉ、Ａｌ、Ｎｉ、Ｒｈ、Ｇａ２Ｏ３、Ｉｎ２Ｏ３の群から選択されることを特徴とする請求項１乃至３のいずれか１項に記載の半導体発光素子。 4. The material according to claim 1, wherein a material of the adhesive conductive film is selected from the group of Pt, Ti, Al, Ni, Rh, Ga 2 O 3 , and In 2 O 3. Semiconductor light emitting device. 前記ｎ形窒化物半導体層と前記カソード電極との間に、前記ｎ形窒化物半導体層における前記窒化物発光層の積層側に形成され前記ｎ形窒化物半導体層よりも屈折率が小さな透明導電膜と、透明導電膜における前記ｎ形窒化物半導体層側とは反対側に形成され導電性を有するとともに前記窒化物発光層から放射された光を反射する反射導電膜とを備え、透明導電膜と反射導電膜との間に、窒化物発光層から放射される光に対して透明であるとともに導電性を有し且つ透明導電膜側への反射導電膜の接着力を高める接着導電膜を介在させてなることを特徴とする請求項１乃至４のいずれか１項に記載の半導体発光素子。   A transparent conductive film formed between the n-type nitride semiconductor layer and the cathode electrode on the side of the nitride light-emitting layer of the n-type nitride semiconductor layer having a lower refractive index than the n-type nitride semiconductor layer. A transparent conductive film comprising a film and a reflective conductive film formed on the opposite side of the transparent conductive film from the n-type nitride semiconductor layer side and having conductivity and reflecting light emitted from the nitride light emitting layer An adhesive conductive film that is transparent to the light emitted from the nitride light emitting layer and has conductivity and increases the adhesion of the reflective conductive film to the transparent conductive film side is interposed between the conductive film and the reflective conductive film The semiconductor light-emitting element according to claim 1, wherein the semiconductor light-emitting element is formed.
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