JP2004188497A - 無鉛はんだによる電子部品パッケージ相互接続のための構造および形成方法 - Google Patents
無鉛はんだによる電子部品パッケージ相互接続のための構造および形成方法 Download PDFInfo
- Publication number
- JP2004188497A JP2004188497A JP2003389972A JP2003389972A JP2004188497A JP 2004188497 A JP2004188497 A JP 2004188497A JP 2003389972 A JP2003389972 A JP 2003389972A JP 2003389972 A JP2003389972 A JP 2003389972A JP 2004188497 A JP2004188497 A JP 2004188497A
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- Prior art keywords
- free solder
- weight
- lead
- composition
- eutectic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 197
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000005304 joining Methods 0.000 title abstract description 11
- 230000005496 eutectics Effects 0.000 claims abstract description 92
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 55
- 239000000956 alloy Substances 0.000 claims abstract description 55
- 229910052718 tin Inorganic materials 0.000 claims abstract description 17
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims description 96
- 229910000765 intermetallic Inorganic materials 0.000 claims description 37
- 239000002245 particle Substances 0.000 claims description 32
- 229910007637 SnAg Inorganic materials 0.000 claims description 23
- 230000008018 melting Effects 0.000 claims description 16
- 238000002844 melting Methods 0.000 claims description 16
- 229910008433 SnCU Inorganic materials 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 3
- 230000002687 intercalation Effects 0.000 claims 2
- 238000009830 intercalation Methods 0.000 claims 2
- 239000000565 sealant Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 4
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 239000012071 phase Substances 0.000 description 25
- 239000008393 encapsulating agent Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 10
- 239000007791 liquid phase Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 239000007790 solid phase Substances 0.000 description 6
- 230000004907 flux Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- ZLGYJAIAVPVCNF-UHFFFAOYSA-N 1,2,4-trichloro-5-(3,5-dichlorophenyl)benzene Chemical compound ClC1=CC(Cl)=CC(C=2C(=CC(Cl)=C(Cl)C=2)Cl)=C1 ZLGYJAIAVPVCNF-UHFFFAOYSA-N 0.000 description 3
- 238000007792 addition Methods 0.000 description 3
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- 238000000151 deposition Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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Abstract
【解決手段】電子回路パッケージは、次の第2レベルの接合/組立処理およびリワーク処理の間に、C4はんだ相互接続の溶融度を制限するはんだ相互接続の液相線温度の階層を有する。はんだ階層は、第1レベルのC4はんだ相互接続のために、高い液相線温度を有するSn/AgおよびSn/Cuの非共晶はんだ合金を使用し、第2レベルの相互接続のために、低い液相線温度を有する合金を使用する。第2レベルの、PCBへのチップ・キャリヤの接合/組立処理が行われるときに、チップとチップ・キャリヤとのC4相互接続部は、全く溶融しない。それらは、一部の固体と、完全に溶融した合金よりも少ない液体を保持し続ける。これは、はんだ接合の膨張を低減し、その結果、C4相互接続において応力を弱める。
【選択図】図1
Description
BLMパッドの上に非共晶無鉛はんだを配置する工程と、
非共晶無鉛はんだを加熱して非共晶無鉛はんだをリフローし、BLMパッド上に非共晶無鉛はんだバンプを形成する工程と、
チップ・キャリヤの上面に導電パッドを有するチップ・キャリヤを設ける工程と、
導電パッドに接触して無鉛はんだ合金を配置する工程と、
無鉛はんだ合金に接触して前記非共晶無鉛はんだバンプを配置する工程と、
非共晶無鉛はんだバンプを加熱して非共晶無鉛はんだバンプをリフローし、チップとチップ・キャリヤとを接着する非共晶無鉛はんだフィレットを形成する工程と、
を含む第1レベルの組立に対する無鉛はんだ溶融階層を形成する方法を提供する。
Electrics Manufacturing Initiative )によって推奨されている。
(1)52.0〜95.0重量%のSnと、48.0〜5.0重量%のAgを主成分とし、250℃より高い溶融温度を有する金属間化合物からなる非共晶無鉛はんだ組成物。
(2)前記組成物は、約72.0重量%のSnと、約28.0重量%のAgよりなり、SnAg金属間化合物の相構造の分散粒子を有する上記(1)に記載の非共晶無鉛はんだ組成物。
(3)前記組成物は、約82.0重量%のSnと、約18.0重量%のAgよりなり、SnAg金属間化合物の相構造の分散粒子を有する上記(1)に記載の非共晶無鉛はんだ組成物。
(4)前記組成物は、約88.0重量%のSnと、約12.0重量%のAgよりなり、SnAg金属間化合物の相構造の分散粒子を有する上記(1)に記載の非共晶無鉛はんだ組成物。
(5)前記組成物は、約52.0重量%のSnと、約48.0重量%のAgよりなり、SnAg金属間化合物の相構造の分散粒子を有する上記(1)に記載の非共晶無鉛はんだ組成物。
(6)84.0〜99.3重量%のSnと、16.0〜0.7重量%のCuを主成分とし、250℃より高い溶融温度を有する金属間化合物からなる非共晶無鉛はんだ組成物。
(7)前記組成物は、約84.0重量%のSnと、約16.0重量%のCuよりなり、SnCu金属間化合物の相構造の分散粒子を有する上記(6)に記載の非共晶無鉛はんだ組成物。
(8)前記組成物は、約93.0重量%のSnと、約7.0重量%のCuよりなり、SnCu金属間化合物の相構造の分散粒子を有する上記(6)に記載の非共晶無鉛はんだ組成物。
(9)a)第1の非共晶無鉛はんだ組成物を用いてチップ・キャリヤの上面に装着された電子回路チップと、
b)第2の非共晶無鉛はんだ組成物を用いて前記チップ・キャリヤの底面に装着された第1の端部を有する無鉛はんだ接続アレイであって、前記第2の非共晶無鉛はんだ組成物は、前記第1の非共晶無鉛はんだ組成物より低い液相線温度を有する、アレイと、
c)第3の無鉛はんだ組成物によって前記無鉛はんだ接続アレイの第2の端部に装着された上面を有するプリント回路基板であって、前記第3の無鉛はんだ組成物は、前記第2の非共晶無鉛はんだ組成物より低い液相線温度を有し、それによって電子回路パッケージ相互接続のための無鉛はんだ階層を形成する、プリント回路基板と、
を含む電子回路パッケージ相互接続のための無鉛はんだ階層構造。
(10)a)前記第1の非共晶無鉛はんだ組成物は、約72.0重量%のSnと、約28.0重量%のAgよりなり、SnAg金属間化合物の相構造の分散粒子および、約400℃の液相線温度を有し、
b)前記第2の非共晶無鉛はんだ組成物は、約82.0重量%のSnと、約18.0重量%のAgよりなり、SnAg金属間化合物の相構造の分散粒子および、約355℃の液相線温度を有し、
c)前記第3の無鉛はんだ組成物は、約95.5重量%のSnと、約3.8重量%のAgと、約0.7重量%のCuよりなり、約217℃の液相線温度を有する、
上記(9)に記載の無鉛はんだ階層構造。
(11)a)チップの底面にボール制限金属(BLM)パッドを有する電子回路チップを設ける工程と、
b)BLMパッド上に非共晶無鉛はんだを配置する工程と、
c)前記非共晶無鉛はんだを加熱して前記非共晶無鉛はんだをリフローし、前記BLMパッド上に非共晶無鉛はんだバンプを形成する工程と、
d)チップ・キャリヤの上面に導電パッドを有するチップ・キャリヤを設ける工程と、
e)前記導電パッドに接触して無鉛はんだ合金を配置する工程と、
f)前記無鉛はんだ合金に接触して前記非共晶無鉛はんだバンプを配置する工程と、
g)前記非共晶無鉛はんだバンプを加熱して前記非共晶無鉛はんだバンプをリフローし、前記チップと前記チップ・キャリヤとを接着する非共晶無鉛はんだフィレットを形成する工程と、
を含む第1レベルの組立のための無鉛はんだ溶融の階層構造を形成する方法。
(12)前記チップと前記チップ・キャリヤとの接続部に封止材を塗布する工程を更に含む上記(11)に記載の方法。
(13)前記非共晶無鉛はんだフィレットは、約84.0〜99.3重量%のSnおよび約16.0〜0.7重量%のCuの組成物を有し、250℃よりも高い溶融温度の金属間化合物を有する上記(11)に記載の方法。
(14)前記非共晶無鉛はんだフィレットは、約93.0重量%のSnと約7.0重量%のCuの組成物を有し、SnCu金属間化合物の相構造の分散粒子を有する上記(13)に記載の方法。
(15)前記非共晶無鉛はんだフィレットは、約84.0重量%のSnと約16.0重量%のCuの組成物を有し、SnCu金属間化合物の相構造の分散粒子を有する上記(13)に記載の方法。
(16)前記非共晶無鉛はんだフィレットは、約52.0〜95.0重量%のSnおよび約48.0〜7.0重量%のAgの組成物を有し、250℃よりも高い溶融温度の金属間化合物を有する上記(11)に記載の方法。
(17)前記非共晶無鉛はんだフィレットは、約82.0重量%のSnと約18.0重量%のAgの組成物を有し、SnAg金属間化合物の相構造の分散粒子を有する上記(16)に記載の方法。
(18)前記非共晶無鉛はんだフィレットは、約88.0重量%のSnと約12.0重量%のAgの組成物を有し、SnAg金属間化合物の相構造の分散粒子を有する上記(16)に記載の方法。
(19)前記非共晶無鉛はんだフィレットは、約72.0重量%のSnと約28.0重量%のAgの組成物を有し、SnAg金属間化合物の相構造の分散粒子を有する上記(16)に記載の方法。
(20)前記非共晶無鉛はんだフィレットは、約52.0重量%のSnと約48.0重量%のAgの組成物を有し、SnAg金属間化合物の相構造の分散粒子を有する上記(16)に記載の方法。
11 底面
20 BLMパッド
30 プリフォーム・ボート
35、65 開口部
40 はんだプリフォーム
50 はんだバンプ
60 ボート
70 フラックス剤
80、140 非共晶無鉛はんだ組成物
90 チップ・キャリヤ
91 上面
95 導電パッド
100 封止材
110 無鉛はんだ接続部
120 プリント回路基板(PCB)
130 ヒート・シンク
150 無鉛はんだ組成物
Claims (20)
- 52.0〜95.0重量%のSnと、48.0〜5.0重量%のAgを主成分とし、250℃より高い溶融温度を有する金属間化合物からなる非共晶無鉛はんだ組成物。
- 前記組成物は、約72.0重量%のSnと、約28.0重量%のAgよりなり、SnAg金属間化合物の相構造の分散粒子を有する請求項1に記載の非共晶無鉛はんだ組成物。
- 前記組成物は、約82.0重量%のSnと、約18.0重量%のAgよりなり、SnAg金属間化合物の相構造の分散粒子を有する請求項1に記載の非共晶無鉛はんだ組成物。
- 前記組成物は、約88.0重量%のSnと、約12.0重量%のAgよりなり、SnAg金属間化合物の相構造の分散粒子を有する請求項1に記載の非共晶無鉛はんだ組成物。
- 前記組成物は、約52.0重量%のSnと、約48.0重量%のAgよりなり、SnAg金属間化合物の相構造の分散粒子を有する請求項1に記載の非共晶無鉛はんだ組成物。
- 84.0〜99.3重量%のSnと、16.0〜0.7重量%のCuを主成分とし、250℃より高い溶融温度を有する金属間化合物からなる非共晶無鉛はんだ組成物。
- 前記組成物は、約84.0重量%のSnと、約16.0重量%のCuよりなり、SnCu金属間化合物の相構造の分散粒子を有する請求項6に記載の非共晶無鉛はんだ組成物。
- 前記組成物は、約93.0重量%のSnと、約7.0重量%のCuよりなり、SnCu金属間化合物の相構造の分散粒子を有する請求項6に記載の非共晶無鉛はんだ組成物。
- a)第1の非共晶無鉛はんだ組成物を用いてチップ・キャリヤの上面に装着された電子回路チップと、
b)第2の非共晶無鉛はんだ組成物を用いて前記チップ・キャリヤの底面に装着された第1の端部を有する無鉛はんだ接続アレイであって、前記第2の非共晶無鉛はんだ組成物は、前記第1の非共晶無鉛はんだ組成物より低い液相線温度を有する、アレイと、
c)第3の無鉛はんだ組成物によって前記無鉛はんだ接続アレイの第2の端部に装着された上面を有するプリント回路基板であって、前記第3の無鉛はんだ組成物は、前記第2の非共晶無鉛はんだ組成物より低い液相線温度を有し、それによって電子回路パッケージ相互接続のための無鉛はんだ階層を形成する、プリント回路基板と、
を含む電子回路パッケージ相互接続のための無鉛はんだ階層構造。 - a)前記第1の非共晶無鉛はんだ組成物は、約72.0重量%のSnと、約28.0重量%のAgよりなり、SnAg金属間化合物の相構造の分散粒子および、約400℃の液相線温度を有し、
b)前記第2の非共晶無鉛はんだ組成物は、約82.0重量%のSnと、約18.0重量%のAgよりなり、SnAg金属間化合物の相構造の分散粒子および、約355℃の液相線温度を有し、
c)前記第3の無鉛はんだ組成物は、約95.5重量%のSnと、約3.8重量%のAgと、約0.7重量%のCuよりなり、約217℃の液相線温度を有する、
請求項9に記載の無鉛はんだ階層構造。 - a)チップの底面にボール制限金属(BLM)パッドを有する電子回路チップを設ける工程と、
b)BLMパッド上に非共晶無鉛はんだを配置する工程と、
c)前記非共晶無鉛はんだを加熱して前記非共晶無鉛はんだをリフローし、前記BLMパッド上に非共晶無鉛はんだバンプを形成する工程と、
d)チップ・キャリヤの上面に導電パッドを有するチップ・キャリヤを設ける工程と、
e)前記導電パッドに接触して無鉛はんだ合金を配置する工程と、
f)前記無鉛はんだ合金に接触して前記非共晶無鉛はんだバンプを配置する工程と、
g)前記非共晶無鉛はんだバンプを加熱して前記非共晶無鉛はんだバンプをリフローし、前記チップと前記チップ・キャリヤとを接着する非共晶無鉛はんだフィレットを形成する工程と、
を含む第1レベルの組立のための無鉛はんだ溶融の階層構造を形成する方法。 - 前記チップと前記チップ・キャリヤとの接続部に封止材を塗布する工程を更に含む請求項11に記載の方法。
- 前記非共晶無鉛はんだフィレットは、約84.0〜99.3重量%のSnおよび約16.0〜0.7重量%のCuの組成物を有し、250℃よりも高い溶融温度の金属間化合物を有する請求項11に記載の方法。
- 前記非共晶無鉛はんだフィレットは、約93.0重量%のSnと約7.0重量%のCuの組成物を有し、SnCu金属間化合物の相構造の分散粒子を有する請求項13に記載の方法。
- 前記非共晶無鉛はんだフィレットは、約84.0重量%のSnと約16.0重量%のCuの組成物を有し、SnCu金属間化合物の相構造の分散粒子を有する請求項13に記載の方法。
- 前記非共晶無鉛はんだフィレットは、約52.0〜95.0重量%のSnおよび約48.0〜7.0重量%のAgの組成物を有し、250℃よりも高い溶融温度の金属間化合物を有する請求項11に記載の方法。
- 前記非共晶無鉛はんだフィレットは、約82.0重量%のSnと約18.0重量%のAgの組成物を有し、SnAg金属間化合物の相構造の分散粒子を有する請求項16に記載の方法。
- 前記非共晶無鉛はんだフィレットは、約88.0重量%のSnと約12.0重量%のAgの組成物を有し、SnAg金属間化合物の相構造の分散粒子を有する請求項16に記載の方法。
- 前記非共晶無鉛はんだフィレットは、約72.0重量%のSnと約28.0重量%のAgの組成物を有し、SnAg金属間化合物の相構造の分散粒子を有する請求項16に記載の方法。
- 前記非共晶無鉛はんだフィレットは、約52.0重量%のSnと約48.0重量%のAgの組成物を有し、SnAg金属間化合物の相構造の分散粒子を有する請求項16に記載の方法。
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- 2003-11-13 KR KR1020030080140A patent/KR100546976B1/ko active IP Right Grant
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- 2003-12-05 CN CN2006100080478A patent/CN1820889B/zh not_active Expired - Fee Related
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JPWO2006064534A1 (ja) * | 2004-12-13 | 2008-08-07 | 株式会社ルネサステクノロジ | 半導体装置 |
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CN100484686C (zh) | 2009-05-06 |
JP4114597B2 (ja) | 2008-07-09 |
CN1820889B (zh) | 2010-06-16 |
TWI238502B (en) | 2005-08-21 |
KR20040049787A (ko) | 2004-06-12 |
US20040108367A1 (en) | 2004-06-10 |
US6854636B2 (en) | 2005-02-15 |
TW200419749A (en) | 2004-10-01 |
KR100546976B1 (ko) | 2006-01-31 |
CN1506188A (zh) | 2004-06-23 |
CN1820889A (zh) | 2006-08-23 |
US20050106059A1 (en) | 2005-05-19 |
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