JP2004119405A5 - - Google Patents
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- JP2004119405A5 JP2004119405A5 JP2002276357A JP2002276357A JP2004119405A5 JP 2004119405 A5 JP2004119405 A5 JP 2004119405A5 JP 2002276357 A JP2002276357 A JP 2002276357A JP 2002276357 A JP2002276357 A JP 2002276357A JP 2004119405 A5 JP2004119405 A5 JP 2004119405A5
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- Japan
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002276357A JP4145108B2 (ja) | 2002-09-20 | 2002-09-20 | ＧａＮＰ結晶の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002276357A JP4145108B2 (ja) | 2002-09-20 | 2002-09-20 | ＧａＮＰ結晶の成長方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004119405A JP2004119405A (ja) | 2004-04-15 |
| JP2004119405A5 true JP2004119405A5 (ja) | 2005-11-10 |
| JP4145108B2 JP4145108B2 (ja) | 2008-09-03 |
Family
ID=32272261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002276357A Expired - Fee Related JP4145108B2 (ja) | 2002-09-20 | 2002-09-20 | ＧａＮＰ結晶の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4145108B2 (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005310929A (ja) * | 2004-04-20 | 2005-11-04 | Nichia Chem Ind Ltd | 窒化物半導体層のエッチング方法 |
| JP5383974B2 (ja) * | 2006-12-27 | 2014-01-08 | 住友電工デバイス・イノベーション株式会社 | 半導体基板および半導体装置 |
| KR102591147B1 (ko) * | 2021-07-08 | 2023-10-19 | 웨이브로드 주식회사 | 비발광 3족 질화물 반도체 적층체를 제조하는 방법 |
| CN113594021A (zh) * | 2021-07-21 | 2021-11-02 | 东莞市中镓半导体科技有限公司 | 硅基GaN-HEMT外延结构的制作方法 |
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2002
- 2002-09-20 JP JP2002276357A patent/JP4145108B2/ja not_active Expired - Fee Related