JP2003257176A5 - - Google Patents
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- Publication number
- JP2003257176A5 JP2003257176A5 JP2002288755A JP2002288755A JP2003257176A5 JP 2003257176 A5 JP2003257176 A5 JP 2003257176A5 JP 2002288755 A JP2002288755 A JP 2002288755A JP 2002288755 A JP2002288755 A JP 2002288755A JP 2003257176 A5 JP2003257176 A5 JP 2003257176A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002288755A JP4262954B2 (ja) | 2001-12-26 | 2002-10-01 | 薄膜磁性体記憶装置 |
| TW091133960A TW578150B (en) | 2001-12-26 | 2002-11-21 | Thin film magnetic memory device writing data with bidirectional current |
| DE10260344A DE10260344B4 (de) | 2001-12-26 | 2002-12-20 | Magnetische Dünnfilmspeichervorrichtung, die Daten mit bidirektionalem Strom schreibt |
| US10/328,032 US7020008B2 (en) | 2001-12-26 | 2002-12-26 | Thin film magnetic memory device writing data with bidirectional current |
| CNB021593892A CN1286116C (zh) | 2001-12-26 | 2002-12-26 | 通过双向电流写入数据的薄膜磁体存储装置 |
| KR10-2002-0083933A KR100518644B1 (ko) | 2001-12-26 | 2002-12-26 | 양방향 전류에 의해 데이터를 기록하는 박막자성체 기억장치 |
| US11/348,359 US7154776B2 (en) | 2001-12-26 | 2006-02-07 | Thin film magnetic memory device writing data with bidirectional current |
| US11/607,893 US7292470B2 (en) | 2001-12-26 | 2006-12-04 | Thin film magnetic memory device writing data with bidirectional current |
| US11/907,168 US7558106B2 (en) | 2001-12-26 | 2007-10-10 | Thin film magnetic memory device writing data with bidirectional current |
| US12/481,392 US7885096B2 (en) | 2001-12-26 | 2009-06-09 | Thin film magnetic memory device writing data with bidirectional current |
| US12/981,942 US7978542B2 (en) | 2001-12-26 | 2010-12-30 | Thin film magnetic memory device writing data with bidirectional current |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-394285 | 2001-12-26 | ||
| JP2001394285 | 2001-12-26 | ||
| JP2002288755A JP4262954B2 (ja) | 2001-12-26 | 2002-10-01 | 薄膜磁性体記憶装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008258712A Division JP4884446B2 (ja) | 2001-12-26 | 2008-10-03 | 薄膜磁性体記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003257176A JP2003257176A (ja) | 2003-09-12 |
| JP2003257176A5 true JP2003257176A5 (ja) | 2005-11-17 |
| JP4262954B2 JP4262954B2 (ja) | 2009-05-13 |
Family
ID=26625287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002288755A Expired - Fee Related JP4262954B2 (ja) | 2001-12-26 | 2002-10-01 | 薄膜磁性体記憶装置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4262954B2 (ja) |
| KR (1) | KR100518644B1 (ja) |
| CN (1) | CN1286116C (ja) |
| DE (1) | DE10260344B4 (ja) |
| TW (1) | TW578150B (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100568542B1 (ko) * | 2004-08-19 | 2006-04-07 | 삼성전자주식회사 | 자기 램 소자의 기록방법 |
| US7508702B2 (en) * | 2007-04-17 | 2009-03-24 | Macronix International Co., Ltd. | Programming method of magnetic random access memory |
| JP2010040658A (ja) * | 2008-08-01 | 2010-02-18 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
| WO2011055420A1 (ja) * | 2009-11-04 | 2011-05-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2013222285A (ja) * | 2012-04-16 | 2013-10-28 | Fujitsu Semiconductor Ltd | バス回路および半導体装置 |
| JP2018147530A (ja) * | 2017-03-03 | 2018-09-20 | 東芝メモリ株式会社 | 半導体記憶装置 |
| CN116209252B (zh) * | 2022-09-23 | 2024-02-23 | 北京超弦存储器研究院 | 存储单元、动态存储器、其读取方法及电子设备 |
| CN116209253B (zh) * | 2022-09-23 | 2024-02-20 | 北京超弦存储器研究院 | 存储单元、动态存储器、其读取方法及电子设备 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6256224B1 (en) * | 2000-05-03 | 2001-07-03 | Hewlett-Packard Co | Write circuit for large MRAM arrays |
| JP2002170377A (ja) * | 2000-09-22 | 2002-06-14 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
| JP5019681B2 (ja) * | 2001-04-26 | 2012-09-05 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
| JP4780878B2 (ja) * | 2001-08-02 | 2011-09-28 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
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2002
- 2002-10-01 JP JP2002288755A patent/JP4262954B2/ja not_active Expired - Fee Related
- 2002-11-21 TW TW091133960A patent/TW578150B/zh not_active IP Right Cessation
- 2002-12-20 DE DE10260344A patent/DE10260344B4/de not_active Expired - Fee Related
- 2002-12-26 KR KR10-2002-0083933A patent/KR100518644B1/ko not_active IP Right Cessation
- 2002-12-26 CN CNB021593892A patent/CN1286116C/zh not_active Expired - Fee Related