JP2004002783A5 - Light emitting diode - Google Patents

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JP2004002783A5
JP2004002783A5 JP2003098521A JP2003098521A JP2004002783A5 JP 2004002783 A5 JP2004002783 A5 JP 2004002783A5 JP 2003098521 A JP2003098521 A JP 2003098521A JP 2003098521 A JP2003098521 A JP 2003098521A JP 2004002783 A5 JP2004002783 A5 JP 2004002783A5
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【特許請求の範囲】
【請求項1】 (A)SiH基と反応性を有する炭素−炭素二重結合を1分子中に少なくとも2個含有する有機化合物、
(B)1分子中に少なくとも2個のSiH基を含有する化合物、
(C)ヒドロシリル化触媒、
(D)1分子中に少なくとも1個のエポキシ基を含有する化合物、及び、
(E)1分子中に少なくとも1個のカルボキシル基を含有する化合物
を含有する光学材料用組成物及び前記光学材料用組成物を硬化させて得られる光学材料の少なくとも一方を含む発光ダイオード。
【請求項2】 (A)成分が、SiH基と反応性を有する炭素−炭素二重結合を(A)成分1gあたり0.001mol以上含有するものである、請求項1に記載の発光ダイオード
【請求項3】 (A)成分が、構成元素としてC、H、N、O、S及びハロゲン以外の元素を含まない化合物である、請求項1又は2に記載の発光ダイオード
【請求項4】 (A)成分が、(イ)1分子中にビニル基を1〜6個含有し、(ロ)分子量が900未満であり、かつ(ハ)23℃における粘度が100Pa・s未満のものである、請求項1〜3のいずれか一項に記載の発光ダイオード
【請求項5】 (A)成分が脂肪族系化合物である、請求項1〜4のいずれか一項に記載の発光ダイオード
【請求項6】 (A)成分が、下記一般式(I)
【化1】

Figure 2004002783
(式中、Rは炭素数1〜50の一価の有機基を表し、それぞれのRは異なっていても同一であってもよい。)で表される有機化合物である、請求項1〜5のいずれか一項に記載の発光ダイオード
【請求項7】 (B)成分の分子量が50〜700である、請求項1〜6のいずれか1項に記載の発光ダイオード
【請求項8】 (B)成分が、SiH基と反応性を有する炭素−炭素二重結合を1分子中に1個以上含有する有機化合物(α)と、1分子中に少なくとも2個のSiH基を有する鎖状及び/又は環状のポリオルガノシロキサン(β)を、ヒドロシリル化反応して得ることができる化合物である、請求項1〜7のいずれか一項に記載の発光ダイオード
【請求項9】 (α)成分が脂肪族系化合物である、請求項8に記載の発光ダイオード
【請求項10】 (β)成分が、下記一般式(II)
【化2】
Figure 2004002783
(式中、Rは炭素数1〜6の有機基を表し、nは3〜10の数を表す。)で表される、1分子中に少なくとも3個のSiH基を有する環状ポリオルガノシロキサンである、請求項8又は9に記載の発光ダイオード
【請求項11】 (D)成分がエポキシシラン類である、請求項1〜10のいずれか一項に記載の発光ダイオード
【請求項12】 (D)成分が、SiH基と反応性を有する炭素−炭素二重結合及び/又はSiH基をさらに含有する化合物である、請求項1〜11のいずれか一項に記載の発光ダイオード
【請求項13】 (E)成分が、SiH基と反応性を有する炭素−炭素二重結合及び/又はSiH基をさらに含有する化合物である、請求項1〜12のいずれか一項に記載の発光ダイオード
【請求項14】 光学材料用組成物全体のうちのエポキシ基の含有量が0.5mmol/g以上である、請求項1〜13のいずれか一項に記載の発光ダイオード
【請求項15】 光学材料用組成物がアルミニウムアルコキシド類を含有しない、請求項1〜14のいずれか一項に記載の発光ダイオード
【請求項16】 光学材料用組成物を硬化させて得られる硬化物を120℃で100時間空気中で保管した後の波長470nmの光線の透過率が80%以上である、請求項1〜15のいずれか一項に記載の発光ダイオード
【請求項17】 発光素子と、該発光素子が配置される底面と側壁とからなる開口部を有するパッケージと、該開口部を封止するモールド部材と、を備える発光ダイオードであって、
前記パッケージは、前記開口部底面において外部電極の一端部が露出するように成形樹脂にて一体成形されてなるものであり、
前記開口部底面の面積を100%とした場合において、前記開口部底面にて露出される前記外部電極の占有面積は50%〜90%であり、
前記モールド部材は請求項1〜16のいずれか一項に記載の光学材料を含むことを特徴とする発光ダイオード。
【請求項18】 パッケージは、開口部底面において正の外部電極と負の外部電極との各端部が所定の間隔を隔てて露出するように成形樹脂にて一体成形されてなるものであり、
前記開口部底面において露出される各外部電極は、パッケージの成形樹脂が露出されてなる少なくとも一対の樹脂露出部を有するものである、請求項17記載の発光ダイオード。
【請求項19】 パッケージの成形樹脂は、半結晶性ポリマー樹脂を含有する組成物である、請求項17又は18に記載の発光ダイオード。 [Claims]
(A) an organic compound containing at least two carbon-carbon double bonds reactive with a SiH group in one molecule;
(B) a compound containing at least two SiH groups in one molecule,
(C) a hydrosilylation catalyst,
(D) a compound containing at least one epoxy group in one molecule, and
(E) Compound containing at least one carboxyl group in one molecule
ContainsA light-emitting diode comprising at least one of an optical material composition and an optical material obtained by curing the optical material composition.
2. The composition according to claim 1, wherein the component (A) contains at least 0.001 mol of carbon-carbon double bonds reactive with a SiH group per 1 g of the component (A).Light emitting diode.
3. The composition according to claim 1, wherein the component (A) is a compound containing no elements other than C, H, N, O, S and halogen as constituent elements.Light emitting diode.
4. The component (A) comprises (A) 1 to 6 vinyl groups per molecule, (B) a molecular weight of less than 900, and (C) a viscosity at 23 ° C. of 100 Pa · s. It is less than, according to any one of claims 1 to 3Light emitting diode.
5. The method according to claim 1, wherein the component (A) is an aliphatic compound.Light emitting diode.
6. The component (A) represented by the following general formula (I)
Embedded image
Figure 2004002783
(Where R1Represents a monovalent organic group having 1 to 50 carbon atoms, and each R1May be different or the same. The organic compound according to any one of claims 1 to 5, which is an organic compound represented by the formula:Light emitting diode.
7. The method according to claim 1, wherein the component (B) has a molecular weight of 50 to 700.Light emitting diode.
8. An organic compound (α) wherein the component (B) contains at least one carbon-carbon double bond reactive with a SiH group per molecule, and at least two SiH groups per molecule. The compound according to any one of claims 1 to 7, wherein the compound is a compound that can be obtained by subjecting a linear and / or cyclic polyorganosiloxane (β) having a group to a hydrosilylation reaction.Light emitting diode.
9. The method according to claim 8, wherein the component (α) is an aliphatic compound.Light emitting diode.
10. The compound represented by the following general formula (II):
Embedded image
Figure 2004002783
(Where R2Represents an organic group having 1 to 6 carbon atoms, and n represents a number of 3 to 10. The cyclic polyorganosiloxane having at least three SiH groups in one molecule represented by the formula (10):Light emitting diode.
11. The method according to claim 1, wherein the component (D) is an epoxysilane.Light emitting diode.
12. The method according to claim 1, wherein the component (D) is a compound further containing a carbon-carbon double bond reactive with a SiH group and / or a SiH group.Light emitting diode.
13. The method according to claim 1, wherein the component (E) is a compound further containing a carbon-carbon double bond and / or a SiH group reactive with a SiH group.Light emitting diode.
14. The composition according to claim 1, wherein the content of the epoxy group in the entire composition for an optical material is 0.5 mmol / g or more.Light emitting diode.
15. The composition for optical materialsIt does not contain aluminum alkoxides, according to any one of claims 1 to 14.Light emitting diode.
16. The transmittance of light having a wavelength of 470 nm after storage of a cured product obtained by curing the composition for optical materials at 120 ° C. for 100 hours in air is 80% or more. Described in any one ofLight emitting diode.
17. A light-emitting diode, comprising: a light-emitting element, a package having an opening including a bottom surface and a side wall in which the light-emitting element is arranged, and a mold member that seals the opening.
The package is formed integrally with a molding resin such that one end of the external electrode is exposed at the bottom of the opening,
When the area of the bottom surface of the opening is 100%, the area occupied by the external electrodes exposed at the bottom surface of the opening is 50% to 90%,
A light emitting diode, wherein the mold member includes the optical material according to claim 1.
18. The package is formed integrally with a molding resin such that each end of the positive external electrode and the negative external electrode is exposed at a predetermined interval on the bottom surface of the opening,
18. The light emitting diode according to claim 17, wherein each of the external electrodes exposed on the bottom surface of the opening has at least a pair of resin exposed portions where a molding resin of the package is exposed.
(19) 19. The light emitting diode according to claim 17, wherein the molding resin of the package is a composition containing a semi-crystalline polymer resin.

すなわち、本発明は、
(A)SiH基と反応性を有する炭素−炭素二重結合を1分子中に少なくとも2個含有する有機化合物、
(B)1分子中に少なくとも2個のSiH基を含有する化合物、
(C)ヒドロシリル化触媒、
(D)1分子中に少なくとも1個のエポキシ基を含有する化合物、及び、
(E)1分子中に少なくとも1個のカルボキシル基を含有する化合物
を含有する光学材料用組成物及び前記光学材料用組成物を硬化させて得られる光学材料の少なくとも一方を含む発光ダイオードであり、
(A)成分が、SiH基と反応性を有する炭素−炭素二重結合を(A)成分1gあたり0.001mol以上含有することが好ましく
(A)成分が、構成元素としてC、H、N、O、S及びハロゲン以外の元素を含まない化合物であることが好ましく
(A)成分が、(イ)1分子中にビニル基を1〜6個含有し、(ロ)分子量が900未満であり、かつ(ハ)23℃における粘度が100Pa・s未満のものであることが好ましく
(A)成分が脂肪族系化合物であることが好ましく
(A)成分が、下記一般式(I)
That is, the present invention
(A) an organic compound containing at least two carbon-carbon double bonds reactive with a SiH group in one molecule,
(B) a compound containing at least two SiH groups in one molecule,
(C) a hydrosilylation catalyst,
(D) a compound containing at least one epoxy group in one molecule, and
(E) a light-emitting diode including at least one of an optical material composition containing a compound containing at least one carboxyl group in one molecule and an optical material obtained by curing the optical material composition ;
Component (A) preferably contains at least 0.001 mol of carbon-carbon double bonds reactive with SiH groups per 1 g of component (A).
The component (A) is preferably a compound containing no element other than C, H, N, O, S and halogen as constituent elements,
The component (A) is (a) one to six vinyl groups in one molecule, (b) the molecular weight is less than 900, and (c) the viscosity at 23 ° C. is less than 100 Pa · s. Preferably ,
(A) The component is preferably an aliphatic compound,
The component (A) has the following general formula (I)

(式中、Rは炭素数1〜50の一価の有機基を表し、それぞれのRは異なっていても同一であってもよい。)で表される有機化合物であることが好ましく
(B)成分の分子量が50〜700であることが好ましく
(B)成分が、SiH基と反応性を有する炭素−炭素二重結合を1分子中に1個以上含有する有機化合物(α)と、1分子中に少なくとも2個のSiH基を有する鎖状及び/又は環状のポリオルガノシロキサン(β)を、ヒドロシリル化反応して得ることができる化合物であることが好ましく
(α)成分が脂肪族系化合物であることが好ましく
(β)成分が、下記一般式(II)
Is preferably an organic compound represented by (wherein, R 1 represents a monovalent organic group having 1 to 50 carbon atoms, each R 1 is which may be. The same or different),
The molecular weight of the component (B) is preferably from 50 to 700,
The component (B) is an organic compound (α) containing at least one carbon-carbon double bond reactive with a SiH group in one molecule, and a chain having at least two SiH groups in one molecule. and / or cyclic polyorganosiloxane (beta), is preferably a compound which can be obtained by hydrosilylation reaction,
(Α) component is preferably an aliphatic compound,
The component (β) is represented by the following general formula (II)

(式中、Rは炭素数1〜6の有機基を表し、nは3〜10の数を表す。)で表される、1分子中に少なくとも3個のSiH基を有する環状ポリオルガノシロキサンであることが好ましく
(D)成分がエポキシシラン類であることが好ましく
(D)成分が、SiH基と反応性を有する炭素−炭素二重結合及び/又はSiH基をさらに含有する化合物であることが好ましく
(E)成分が、SiH基と反応性を有する炭素−炭素二重結合及び/又はSiH基をさらに含有する化合物であることが好ましく
光学材料用組成物全体のうちのエポキシ基の含有量が0.5mmol/g以上であることが好ましく
光学材料用組成物がアルミニウムアルコキシド類を含有しないことが好ましく
光学材料用組成物を硬化させて得られる硬化物を120℃で100時間空気中で保管した後の波長470nmの光線の透過率が80%以上であることが好ましい。
本発明は、また、発光素子と、該発光素子が配置される底面と側壁とからなる開口部を有するパッケージと、該開口部を封止するモールド部材と、を備える発光ダイオードであって、
前記パッケージは、前記開口部底面において外部電極の一端部が露出するように成形樹脂にて一体成形されてなるものであり、
前記開口部底面の面積を100%とした場合において、前記開口部底面にて露出される前記外部電極の占有面積は50%〜90%であり、
前記モールド部材は上述の光学材料を含むことを特徴とする発光ダイオードであり
パッケージは、開口部底面において正の外部電極と負の外部電極との各端部が所定の間隔を隔てて露出するように成形樹脂にて一体成形されてなるものであり、
前記開口部底面において露出される各外部電極は、パッケージの成形樹脂が露出されてなる少なくとも一対の樹脂露出部を有するものであることが好ましく
パッケージの成形樹脂は、半結晶性ポリマー樹脂を含有する組成物であることが好ましい。
以下、本発明を詳細に説明する。
(Wherein, R 2 represents an organic group having 1 to 6 carbon atoms, and n represents a number of 3 to 10). A cyclic polyorganosiloxane having at least three SiH groups in one molecule represented by the following formula: Is preferably
The component (D) is preferably an epoxy silane,
The component (D) is preferably a compound further containing a carbon-carbon double bond and / or a SiH group reactive with a SiH group,
The component (E) is preferably a compound further containing a carbon-carbon double bond and / or a SiH group reactive with a SiH group,
It is preferable that the content of the epoxy group in the entire composition for optical materials is 0.5 mmol / g or more,
Preferably , the composition for optical materials does not contain aluminum alkoxides,
The cured product obtained by curing the composition for an optical material, when stored in air at 120 ° C. for 100 hours, preferably has a transmittance of light of 470 nm of 80% or more .
The present invention is also a light-emitting diode , comprising: a light-emitting element, a package having an opening including a bottom surface and a side wall on which the light-emitting element is arranged, and a mold member that seals the opening.
The package is formed integrally with a molding resin such that one end of the external electrode is exposed at the bottom of the opening,
When the area of the bottom surface of the opening is 100%, the occupied area of the external electrode exposed at the bottom surface of the opening is 50% to 90%;
The mold member is a light emitting diode which comprises the above-mentioned optical material,
The package is formed integrally with a molding resin such that each end of the positive external electrode and the negative external electrode is exposed at a predetermined interval on the bottom surface of the opening,
Each external electrode is exposed in the opening bottom is preferably molded resin package has at least a pair of the resin exposed portion formed by exposing,
The molding resin of the package is preferably a composition containing a semi-crystalline polymer resin .
Hereinafter, the present invention will be described in detail.

JP2003098521A 2002-04-04 2003-04-01 Light emitting diode Expired - Lifetime JP5000072B2 (en)

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JP4782476B2 (en) * 2005-06-03 2011-09-28 株式会社カネカ Method for producing SiH group-containing compound
WO2007074813A1 (en) * 2005-12-26 2007-07-05 Kaneka Corporation Curable composition
WO2007135707A1 (en) 2006-05-18 2007-11-29 Nichia Corporation Resin molded body and surface-mounted light emitting device, and manufacturing method thereof
JP2008201851A (en) * 2007-02-16 2008-09-04 Kaneka Corp Curable composition and optical material using the same
JP5177129B2 (en) * 2007-03-01 2013-04-03 旭硝子株式会社 Treatment substrate having pattern of water repellent region, method for producing the same, and method for producing a member on which a pattern made of a film of functional material is formed
WO2009075233A1 (en) 2007-12-10 2009-06-18 Kaneka Corporation Alkali-developable curable composition, insulating thin film using the same, and thin film transistor
EP2085411A3 (en) 2008-01-22 2009-08-26 JSR Corporation Metal-coating material, method for protecting metal, and light emitting device
EP2343326B1 (en) * 2008-10-02 2018-08-15 Kaneka Corporation Photocurable composition and cured product
JP5504689B2 (en) * 2008-11-28 2014-05-28 東レ株式会社 Negative photosensitive resin composition and touch panel material using the same
JP5801028B2 (en) * 2009-10-21 2015-10-28 株式会社Adeka Silicon-containing curable composition and cured product thereof
JP4671309B1 (en) * 2010-06-28 2011-04-13 アイカ工業株式会社 Addition type silicone resin composition
JP5817297B2 (en) * 2011-06-03 2015-11-18 東芝ライテック株式会社 Light emitting device and lighting device

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