JP2003158120A - Surface treatment device - Google Patents
Surface treatment deviceInfo
- Publication number
- JP2003158120A JP2003158120A JP2002247948A JP2002247948A JP2003158120A JP 2003158120 A JP2003158120 A JP 2003158120A JP 2002247948 A JP2002247948 A JP 2002247948A JP 2002247948 A JP2002247948 A JP 2002247948A JP 2003158120 A JP2003158120 A JP 2003158120A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- plate
- cooling
- surface treatment
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】本発明は表面処理装置に係り、特に、均一
なガス流分布を形成するとともに、面内温度均一性に優
れかつ処理中の温度変化を抑えたガス放出機構を有する
表面処理装置に関する。The present invention relates to a surface treatment apparatus, and more particularly to a surface treatment apparatus having a uniform gas flow distribution, an excellent in-plane temperature uniformity, and a gas discharge mechanism which suppresses a temperature change during the treatment.
【０００２】[0002]
【従来の技術】ドライエッチングやＣＶＤ等のガスを用
いた表面処理は、基板及びその周辺部材の温度及びガス
の流れにより大きく影響される。従って、安定した処理
を連続して行うには、基板の温度制御機構のみならず、
均一なガス流分布を形成でき、かつ所定の温度に制御さ
れたガス放出機構が必要となる。2. Description of the Related Art Surface treatment using gas such as dry etching and CVD is greatly affected by the temperature of the substrate and its peripheral members and the flow of gas. Therefore, in order to perform stable processing continuously, not only the temperature control mechanism of the substrate,
A gas discharge mechanism that can form a uniform gas flow distribution and is controlled to a predetermined temperature is required.
【０００３】従来のガス放出機構を図１１を参照して説
明する。図１１は、特開平７−３３５６３５号公報に開
示されたドライエッチング装置の構造を示す模式的断面
図である。図に示すように、処理室１００内部に、基板
１０５に対向して対向電極となるガス放出機構１０１が
配置される。この対向電極１０１は、多数のガス吹出孔
１０４ａを有するガス板１０４、これを固定する補強板
１０３、及び冷却水路１０６を内蔵する冷却ジャケット
１０２から構成され、絶縁体１０８を介して処理室１０
０に固定されている。冷却ジャケット１０２及び補強板
１０３には、ガス板の吹出孔１０４ａに連通するように
ガス通路１０２ａ、１０３ａが形成されている。ガス板
１０４はロウ付け等により厚さ１０ｍｍ程度の補強板１
０３に固定され、補強板はさらにボルト１０９により冷
却ジャケット１０２に固定される。また、補強板とガス
板の対向する面には、吹出孔１０４ａとガス通路１０３
ａとの位置あわせを容易とするための複数のガス分散溝
１０３ｂ，１０４ｂが互いに直交するように形成されて
いる。ガス導入管１１０を通して導入されるガスは、ガ
ス流路１０７で分散し、ガス通路１０２ａ、１０３ａ、
ガス分散路１０３ｂ、１０４ｂを通り、ガス吹出孔１０
４ａから処理室１００内に放出される。また、冷却ジャ
ケット１０２には、冷却水路１０６が形成され、冷却水
は冷却水供給管１０６ａから供給され排出管１０６ｂに
排出される。プラズマに曝されるガス板は、冷却ジャケ
ットと補強板、及び補強板とガス板との熱伝達により間
接的に冷却される。このようにして、ガス板の温度上昇
を抑えエッチング処理の均一性を図っている。A conventional gas releasing mechanism will be described with reference to FIG. FIG. 11 is a schematic sectional view showing the structure of the dry etching apparatus disclosed in Japanese Patent Laid-Open No. 7-335635. As shown in the figure, inside the processing chamber 100, a gas discharge mechanism 101 that faces the substrate 105 and serves as a counter electrode is arranged. The counter electrode 101 is composed of a gas plate 104 having a large number of gas outlets 104 a, a reinforcing plate 103 for fixing the gas plate 104, and a cooling jacket 102 having a cooling water passage 106 therein.
It is fixed at 0. Gas passages 102a and 103a are formed in the cooling jacket 102 and the reinforcing plate 103 so as to communicate with the blowout holes 104a of the gas plate. The gas plate 104 is a brazing plate 1 having a thickness of about 10 mm by brazing or the like.
03, and the reinforcing plate is further fixed to the cooling jacket 102 with bolts 109. In addition, on the surfaces of the reinforcing plate and the gas plate facing each other, the blowout holes 104a and the gas passages 103
A plurality of gas dispersion grooves 103b, 104b for facilitating alignment with a are formed so as to be orthogonal to each other. The gas introduced through the gas introduction pipe 110 is dispersed in the gas passage 107, and the gas passages 102a, 103a,
The gas outlets 10 are passed through the gas dispersion paths 103b and 104b.
4a is discharged into the processing chamber 100. A cooling water passage 106 is formed in the cooling jacket 102, and the cooling water is supplied from the cooling water supply pipe 106a and discharged to the discharge pipe 106b. The gas plate exposed to the plasma is indirectly cooled by heat transfer between the cooling jacket and the reinforcing plate and between the reinforcing plate and the gas plate. In this way, the temperature rise of the gas plate is suppressed and the etching process is made uniform.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、本発明
者が超微細パターンの高速エッチング処理方法を研究開
発するなかで、ガス放出機構の構成とエッチングパター
ン精度との関係を種々検討したところ、より微細なパタ
ーンを形成するためには、ガス流分布のより一層の均一
化とガス板のより高精度な温度制御が不可欠であり、図
１１に示したガス放出機構では、両者を同時に満足させ
ることは困難であることが明らかになった。However, as the present inventors researched and developed a high-speed etching method for ultrafine patterns, various investigations were conducted on the relationship between the structure of the gas releasing mechanism and the etching pattern accuracy. In order to form such a pattern, it is indispensable to make the gas flow distribution more uniform and control the temperature of the gas plate with higher accuracy. With the gas release mechanism shown in FIG. 11, it is not possible to satisfy both at the same time. It turned out to be difficult.
【０００５】即ち、図１１では補強板を介してガス板を
間接的に冷却する構成としているため、処理条件によっ
てガス板の冷却能力が不足し、パターンが微細化するに
つれて、エッチング均一性が低下することが分かった。
そこで、冷却能力を高めるために冷却水路を大きくする
検討を行ったが、所望の冷却能力は得られるものの、こ
のためにはガス吹出孔の密度を低下せざるを得ず、この
ためガス流分布の均一性が低下することになり、結果的
に十分なエッチング均一性が得られないことが分かっ
た。That is, in FIG. 11, since the gas plate is indirectly cooled through the reinforcing plate, the cooling capacity of the gas plate is insufficient depending on the processing conditions, and the etching uniformity deteriorates as the pattern becomes finer. I found out that
Therefore, in order to increase the cooling capacity, a study was conducted to enlarge the cooling water channel.However, although the desired cooling capacity was obtained, the density of the gas outlets had to be reduced for this purpose, and therefore the gas flow distribution was reduced. It was found that the etching uniformity was reduced, and as a result, sufficient etching uniformity could not be obtained.
【０００６】さらに、処理を連続して繰り返し行う場合
には、処理開始から所定の期間はエッチング特性が安定
せず、所望の特性が得られない期間があり、この間の処
理は無駄になるという問題がある。この問題は、パター
ンがより微細化するにつれて深刻となり、０．１３μｍ
パターンの場合、処理開始から１５〜２０枚程度の処理
は無駄になることが明らかになった。Further, when the treatment is continuously repeated, the etching characteristic is not stable for a predetermined period from the start of the treatment, and there is a period in which the desired characteristic is not obtained, and the treatment during this period is wasted. There is. This problem becomes more serious as the pattern becomes finer, and 0.13 μm
In the case of a pattern, it became clear that the processing of about 15 to 20 sheets from the start of processing becomes useless.
【０００７】また、図１１のガス放出機構は、ガス板を
ロウ付け等により補強板に貼り付ける構成としているた
め、貼り付け時にガス板表面が汚染されやすく、エッチ
ング特性を低下させる原因となるとともに、ガス吹出孔
を閉塞することなく貼り付けるのは容易でなく、作業は
熟練を要ししかも煩雑であるという問題もあった。な
お、この問題を回避するために、ガス板の一部をボルト
で締め付け固定する方法も開示されているが、十分な冷
却効果が得られず、また均等な圧力で固定するのは容易
ではないため、温度分布が大きくなるという問題があっ
た。さらに、処理中の熱によりガス板が破損し易いとい
う問題があった。さらに、レジストと反応する活性種を
除去するために、ガス板はスカベンジャー材で構成する
のが好ましいが、ＳｉやＳｉＯ２等の材料に溝等の複雑
な形状を形成すると処理中の熱履歴により割れ易くなる
という問題があった。Further, since the gas release mechanism of FIG. 11 has a structure in which the gas plate is attached to the reinforcing plate by brazing or the like, the surface of the gas plate is easily contaminated during the attachment, which causes deterioration of etching characteristics. However, it is not easy to attach the gas outlet without blocking it, and there is a problem that the work requires skill and is complicated. In order to avoid this problem, a method of tightening and fixing a part of the gas plate with bolts is also disclosed, but a sufficient cooling effect cannot be obtained, and it is not easy to fix with a uniform pressure. Therefore, there is a problem that the temperature distribution becomes large. Further, there is a problem that the gas plate is easily damaged by heat during processing. Furthermore, in order to remove the active species that react with the resist, it is preferable that the gas plate is made of a scavenger material, but if a complicated shape such as a groove is formed in a material such as Si or SiO 2 , it may be affected by thermal history during processing. There was a problem that it became easy to break.
【０００８】以上のガス流分布及びガス板温度分布の問
題は、エッチング装置に限らず他の表面処理装置でも発
生するものである。例えば、熱ＣＶＤ装置のガス放出機
構に温度分布があると、熱の高い部分で分解が進みすぎ
ガス板のその部分に膜が堆積し、これが剥離してパーテ
ィクル発生の原因になる。また、場合によってはガス板
の温度分布に対応して基板上の膜堆積速度が変化してし
まうという問題があった。The above problems of the gas flow distribution and the gas plate temperature distribution occur not only in the etching apparatus but also in other surface treatment apparatuses. For example, if there is a temperature distribution in the gas release mechanism of the thermal CVD apparatus, decomposition proceeds too much in a high heat portion and a film is deposited on that portion of the gas plate, which causes separation and causes generation of particles. In addition, in some cases, there is a problem that the film deposition rate on the substrate changes depending on the temperature distribution of the gas plate.
【０００９】本発明者は、かかる知見を基に更に検討を
進め、特にエッチング装置について、ガス放出機構の構
造及びその構成部材の配置とエッチング特性、再現性と
の関係を鋭意検討することにより、本発明を完成したも
のである。即ち、本発明は、均一なガス流分布の形成を
可能とするとともに、ガス板の温度及びその分布の制御
性に優れたガス放出機構を実現し、均一な処理を連続し
て行うことが可能な表面処理装置を提供することを目的
とする。The present inventor has made further studies based on the above findings, and in particular, in an etching apparatus, by earnestly examining the relationship between the structure of the gas releasing mechanism and the arrangement of its constituent members, and the etching characteristics and reproducibility, The present invention has been completed. That is, according to the present invention, it is possible to form a uniform gas flow distribution, and also to realize a gas discharge mechanism that is excellent in controllability of the temperature of the gas plate and its distribution, so that uniform processing can be continuously performed. An object of the present invention is to provide a simple surface treatment device.
【００１０】[0010]
【課埋を解決するための手段】本発明の第１の表面処理
装置は、内部に基板を載置する基板載置機構及びガス放
出機構を対向して配置した処理室と、該処理室内部を排
気する排気手段と、前記ガス放出機構にガスを供給する
ためのガス供給手段と、からなり、前記ガス放出機構を
通して前記処理室内部に導入されるガスにより前記基板
を処理する表面処理装置において、前記ガス放出機構
は、上流側から、前記ガス供給手段と連通するガス分散
機構、多数のガス通路を有しかつ冷媒流路又はヒータが
設けられたガス板の冷却又は加熱機構、及び前記多数の
ガス通路と連通する多数のガス吹出孔を有するガス板の
順に配置した構成とし、前記ガス板を、静電吸着機構又
は前記ガス板の周辺部を把持する把持部材により、前記
ガス板の冷却又は加熱機構に固定したことを特徴とす
る。A first surface processing apparatus of the present invention is a processing chamber in which a substrate mounting mechanism for mounting a substrate and a gas releasing mechanism are arranged to face each other, and the inside of the processing chamber. A surface treatment apparatus for treating the substrate with a gas introduced into the processing chamber through the gas emission mechanism, and an exhaust means for evacuating the gas emission mechanism and a gas supply means for supplying gas to the gas emission mechanism. The gas discharge mechanism is, from the upstream side, a gas dispersion mechanism that communicates with the gas supply unit, a gas plate cooling or heating mechanism that has a plurality of gas passages and is provided with a refrigerant passage or a heater, and the plurality of gas discharge mechanisms. The gas plates having a large number of gas outlets communicating with the gas passage are arranged in order, and the gas plates are cooled by an electrostatic adsorption mechanism or a gripping member that grips the peripheral portion of the gas plate. Or addition Characterized in that fixed to mechanism.
【００１１】このように、ガス放出機構を、ガス上流側
からガス分散機構、冷却又は加熱機構、及びガス板の順
に配置することにより、均一なガス流分布を形成できる
とともに、ガス板が加熱又は冷却機構に直接接触し、し
かも静電吸着機構や把持機構により均一に圧着されるた
め、ガス板の冷却及び加熱効率並びにその均一性は大幅
に改善され、ガス板表面全面を所定の温度で均一に保つ
ことが可能となる。As described above, by arranging the gas discharge mechanism in the order of the gas dispersion mechanism, the cooling or heating mechanism, and the gas plate from the gas upstream side, it is possible to form a uniform gas flow distribution and the gas plate is heated or heated. Since it directly contacts the cooling mechanism and is evenly pressure-bonded by the electrostatic adsorption mechanism and the gripping mechanism, the cooling and heating efficiency of the gas plate and its uniformity are greatly improved, and the entire surface of the gas plate is made uniform at a given temperature. It is possible to keep
【００１２】本発明の第２の表面処理装置は、内部に基
板を載置する基板載置機構及びガス放出機構を対向して
配置した処理室と、該処理室内部を排気する排気手段
と、前記ガス放出機構にガスを供給するためのガス供給
手段と、からなり、前記ガス放出機構を通して前記処理
室内部に導入されるガスにより前記基板を処理する表面
処理装置において、前記ガス放出機構を、上流側から、
前記ガス供給手段と連通する第１のガス分散機構、多数
のガス通路を有しかつ冷媒流路又はヒータが設けられた
ガス板の冷却又は加熱機構、第２のガス分散機構、及び
前記ガス通路の数よりも多数のガス吹出孔を有するガス
板の順に配置し、前記第２のガス分散機構により前記ガ
ス通路と前記ガス吹出孔とを連通させる構成とし、前記
ガス板を、静電吸着機構又は前記ガス板の周辺部を把持
する把持部材により、前記ガス板の冷却又は加熱機構に
固定したことを特徴とする。A second surface processing apparatus of the present invention is a processing chamber in which a substrate mounting mechanism for mounting a substrate and a gas releasing mechanism are arranged to face each other, and exhaust means for exhausting the inside of the processing chamber. A gas supply unit for supplying gas to the gas discharge mechanism, wherein the gas discharge mechanism is a surface treatment apparatus that processes the substrate with the gas introduced into the processing chamber through the gas discharge mechanism. From the upstream side,
A first gas dispersion mechanism communicating with the gas supply means, a gas plate cooling or heating mechanism having a large number of gas passages and provided with a refrigerant passage or a heater, a second gas dispersion mechanism, and the gas passages. Gas plates having a number of gas outlets larger than the number of the gas plates are arranged in this order, and the gas passages and the gas outlets are communicated with each other by the second gas dispersion mechanism. Alternatively, it is fixed to the cooling or heating mechanism of the gas plate by a holding member that holds the peripheral portion of the gas plate.
【００１３】第２のガス分散機構をガス板と冷却又は加
熱機構との間に設けて、冷却又は加熱機構のガス通路を
分岐させることにより、冷媒通路等の直下にもガス吹出
孔を設けることが可能となる。即ち、冷却能力の大きな
冷媒流路を設ける場合であっても、均一なガス流分布に
不可欠な高密度のガス吹出孔を配置することが可能とな
る。この結果、上記本発明の第１の表面処理装置と同じ
く、均一なガス流分布を維持しつつ、ガス板の温度上昇
の抑制及び温度均一性の向上が可能となり、均一な処理
を安定して繰り返し行うことができる。The second gas dispersion mechanism is provided between the gas plate and the cooling or heating mechanism, and the gas passage of the cooling or heating mechanism is branched so that a gas blowout hole is provided immediately below the refrigerant passage or the like. Is possible. That is, even when a coolant passage having a large cooling capacity is provided, it is possible to arrange the high-density gas blowout holes that are indispensable for uniform gas flow distribution. As a result, as in the case of the first surface treatment apparatus of the present invention, it is possible to suppress the temperature rise of the gas plate and improve the temperature uniformity while maintaining a uniform gas flow distribution, and stabilize the uniform treatment. It can be repeated.
【００１４】さらに、本発明において、前記第２のガス
分散機構は、厚さを０．１ｍｍ以下の空間とし、該空間
の圧力が１００Ｐａ以上となるように構成するのが好ま
しい。これにより、冷却又は加熱機構とガス板との間
で、ガスを介した熱伝達が大きくなり、冷却効率が向上
する。また、前記ガス吹出孔の直径を０．０１〜１ｍｍ
とするのが好ましく、０．２ｍｍ以下とするのがより好
ましい。これによりガス流の分布を一層均一に制御する
ことができ、基板全面でガスを均一に流すことができ
る。なお、本発明の表面処理装置は、ガス放出機構に高
周波電力を供給することによりプラズマを発生させて処
理を行うプラズマ処理装置に好適に適用される。Further, in the present invention, it is preferable that the second gas dispersion mechanism has a space with a thickness of 0.1 mm or less, and the pressure of the space is 100 Pa or more. As a result, the heat transfer via the gas between the cooling or heating mechanism and the gas plate is increased, and the cooling efficiency is improved. Moreover, the diameter of the gas outlet is 0.01 to 1 mm.
Is preferably, and more preferably 0.2 mm or less. Thereby, the distribution of the gas flow can be controlled more uniformly, and the gas can be flowed uniformly over the entire surface of the substrate. The surface treatment apparatus of the present invention is preferably applied to a plasma treatment apparatus that generates plasma by supplying high-frequency power to a gas discharge mechanism to perform processing.
【００１５】また、前記ガス板と前記冷却又は加熱機構
あるいは第２のガス分散機構との接触面を互いに嵌合す
る凹凸部を設けることにより、ガス板の冷却効率、加熱
効率、及びガス板温度の均一性は一層向上する。また、
前記ガス板を、柔軟性を有する伝熱シートを介して前記
冷却又は加熱機構にあるいは前記第２のガス分散機構に
固定しても良く、接触面の微少な凹凸内に伝熱シートが
入り込むことにより、熱伝達性が向上する。前記ガス板
の材質としては、特にエッチング装置の場合は、Ｓｉ、
ＳｉＯ２、ＳｉＣ又はカーボン等の非金属材料が好適に
用いられる。Further, by providing a concavo-convex portion for fitting the contact surfaces of the gas plate and the cooling or heating mechanism or the second gas dispersion mechanism with each other, the cooling efficiency, the heating efficiency and the gas plate temperature of the gas plate can be improved. Uniformity is further improved. Also,
The gas plate may be fixed to the cooling or heating mechanism or the second gas dispersing mechanism via a heat transfer sheet having flexibility, and the heat transfer sheet should enter the minute unevenness of the contact surface. Thereby, the heat transfer property is improved. As the material of the gas plate, especially in the case of an etching apparatus, Si,
A non-metal material such as SiO 2 , SiC or carbon is preferably used.
【００１６】[0016]
【発明実施の形態】本発明の実施の形態を図面を参照し
て説明する。本発明の第１の実施の形態として、本発明
を表面処理装置の１つであるエッチング装置に適用した
場合について以下に説明する。図１は、本発明のエッチ
ング装置の一構成例を示す模式的縦断面図であり、処理
ガスをガス放出機構から基板に向けて吹き出すととも
に、ガス放出機構に高周波電力を供給してプラズマを発
生させ、これにより基板のエッチング処理を行う装置で
ある。即ち、本実施の形態では、ガス放出機構が基板載
置電極に対向して配置される対向電極の役割を担ってい
る。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described with reference to the drawings. As a first embodiment of the present invention, a case where the present invention is applied to an etching apparatus which is one of surface treatment apparatuses will be described below. FIG. 1 is a schematic vertical cross-sectional view showing one structural example of an etching apparatus of the present invention, in which a processing gas is blown from a gas releasing mechanism toward a substrate and high-frequency power is supplied to the gas releasing mechanism to generate plasma. This is an apparatus for etching the substrate. That is, in the present embodiment, the gas release mechanism plays the role of the counter electrode arranged so as to face the substrate mounting electrode.
【００１７】図１に示すように、処理室１内には、対向
電極（ガス放出機構）２と、基板４０を載置する基板載
置電極（基板載置機構）７とが対向して配置され、それ
ぞれ絶縁体１２ａ，１２ｂを介して処理室１に固定され
ている。処理室内部は、バルブ１３を介して排気手段
（不図示）に連結されている。対向電極２は、プラズマ
発生用の第１の高周波電源１４に連結されるとともに、
ガス導入管１０を介してガスボンベ、マスフローコント
ローラー及びストップバルブ等からなるガス供給手段２
２に連結されている。As shown in FIG. 1, in the processing chamber 1, a counter electrode (gas releasing mechanism) 2 and a substrate mounting electrode (substrate mounting mechanism) 7 on which a substrate 40 is mounted are arranged so as to face each other. And is fixed to the processing chamber 1 via the insulators 12a and 12b, respectively. The inside of the processing chamber is connected to an exhaust unit (not shown) via a valve 13. The counter electrode 2 is connected to a first high frequency power supply 14 for plasma generation, and
Gas supply means 2 including a gas cylinder, a mass flow controller, a stop valve and the like via the gas introduction pipe 10.
It is connected to 2.
【００１８】対向電極２は、ガス分散機構と、多数のガ
ス通路５ａを有する冷却ジャケット（冷却機構）５と、
ガス通路５ａと連通するガス吹出孔６ａを有するガス板
６とからなり、これらが円筒状の枠体３内部に配置、固
定されている。冷却ジャケット５の内部には冷媒流路５
ｂが設けられ、冷媒は導入管５ｃから、例えば枠体３に
設けられた配管を通り冷媒通路５ｂに供給され、排出管
５ｄを通して排出される。なお、ガス分散機構は、多数
の小孔４ａを有するガス分散板４が内部に１又は複数配
置された構成のものが好適に用いられる。The counter electrode 2 includes a gas dispersion mechanism, a cooling jacket (cooling mechanism) 5 having a large number of gas passages 5a,
A gas plate 6 having a gas outlet 5a communicating with the gas passage 5a is arranged and fixed inside the cylindrical frame 3. Inside the cooling jacket 5, the refrigerant flow path 5 is provided.
b is provided, and the refrigerant is supplied from the introduction pipe 5c to the refrigerant passage 5b through, for example, the pipe provided in the frame body 3 and discharged through the discharge pipe 5d. In addition, as the gas dispersion mechanism, one having a configuration in which one or a plurality of gas dispersion plates 4 having a large number of small holes 4a are arranged inside is preferably used.
【００１９】図２は、ガス板６の固定方法の一例を示す
拡大図であり、ガス板６は環状の留め具２４とネジ２５
とからなる把持機構により、冷却ジャケット５に直接接
触して固定されている。このような把持機構を用いるこ
とにより、全周にわたりガス板６を固定するため、ネジ
でガス板の一部を締め付けて固定する場合と異なり、ガ
ス板６をより強い力でかつ均一に冷却ジャケット５に圧
着することができる。この結果、熱伝達率が上昇して冷
却効果が向上するだけでなく、圧着によるガス板６の破
損も回避できる。また、ロウ付け、接着剤等により貼り
付ける場合のように、不純物汚染やガス吹出孔の閉塞に
よるエッチング処理特性が低下するという問題も解消す
ることができる。ガス導入管１０を通して対向電極内部
に供給されるプロセスガスは、ガス分散板４の小孔４ａ
を通って、ガス分散機構内の全体で均一に広がった後、
冷却ジャケット５のガス通路５ａを通り、ガス板６のガ
ス吹出孔６ａから処理室１の内部に均一に流れ出す。FIG. 2 is an enlarged view showing an example of a method of fixing the gas plate 6. The gas plate 6 has an annular fastener 24 and a screw 25.
It is fixed in direct contact with the cooling jacket 5 by a gripping mechanism consisting of. Since the gas plate 6 is fixed over the entire circumference by using such a gripping mechanism, unlike the case where a part of the gas plate is fixed with a screw, the gas plate 6 is evenly and uniformly cooled with a cooling jacket. 5 can be crimped. As a result, not only the heat transfer rate increases and the cooling effect improves, but also damage to the gas plate 6 due to pressure bonding can be avoided. Further, it is possible to solve the problem that the etching treatment characteristics are deteriorated due to contamination of impurities and blockage of gas blowout holes, as in the case of attaching with brazing or an adhesive. The process gas supplied to the inside of the counter electrode through the gas introduction pipe 10 is a small hole 4 a of the gas dispersion plate 4.
And then spread evenly throughout the gas dispersion mechanism,
The gas flows through the gas passage 5a of the cooling jacket 5 and uniformly flows into the processing chamber 1 through the gas outlets 6a of the gas plate 6.
【００２０】以上のように、ガスの上流側からガス分散
板４、冷却ジャケット５、ガス板６の順序で配置し、冷
却ジャケット５とガス板６とを直接接触させ、しかも均
一な力で圧着固定する構造としているため、プロセスガ
スを基板４０に向かって均一に流れ出させることが可能
となるとともに、ガス板６が効率よく均一に冷却される
ことになる。即ち、プロセスガスがガス板の多数のガス
吹出孔から基板に向かって均一に流れ出すため、基板表
面をエッチングする活性種の濃度差が均一になり、エッ
チングレートやコンタクトホール形状を基板面内で均一
にすることができる。また、高いＲＦ電力を対向電極２
や基板載置電極７に投入する処理条件であっても、ガス
板の温度上昇が効果的に抑えられ、基板側に低融点物質
が堆積してエッチングレートが低下したり、コンタクト
ホールのエッチング不良発生の問題等を防止することが
できる。As described above, the gas dispersion plate 4, the cooling jacket 5 and the gas plate 6 are arranged in this order from the upstream side of the gas, the cooling jacket 5 and the gas plate 6 are brought into direct contact with each other, and pressure is applied with a uniform force. Since the structure is fixed, the process gas can be made to flow out uniformly toward the substrate 40, and the gas plate 6 can be efficiently and uniformly cooled. That is, since the process gas flows out uniformly from a large number of gas outlet holes of the gas plate toward the substrate, the difference in the concentration of active species that etches the substrate surface becomes uniform, and the etching rate and contact hole shape are uniform within the substrate surface. Can be Also, a high RF power is applied to the counter electrode 2.
The temperature rise of the gas plate can be effectively suppressed even under the processing conditions of charging the substrate or the substrate mounting electrode 7, and the low melting point substance is deposited on the substrate side to lower the etching rate, or the etching failure of the contact hole is poor. It is possible to prevent the occurrence problem.
【００２１】一方、基板載置電極７は、その上部に基板
を静電吸着する静電チャック９が取り付けられ、内部に
は冷媒流路８が形成されている。冷媒は導入管８ａを通
して供給され、排出管８ｂを介して排出される。この冷
媒により静電チャックを介して基板は所定の温度に冷却
される。この基板載置電極７は、基板のバイアス制御用
の第２の高周波電源１５及び基板静電吸着用の直流電源
１７に接続されている。また、第２の高周波電源１５及
び直流電源１７と基板載置電極７の間には、ブロッキン
グコンデンサ１６及び高周波カットフィルタ１８が取り
付けられ、相互の干渉を防止している。さらに基板載置
電極７には、基板搬出入時に基板４０を上下に移動させ
るための突き出しピン１９が通る貫通孔２０が形成さ
れ、貫通孔はベローズ２１及び底板２１ａにより大気と
遮断されている。この底板２１ａには、突き上げピン１
９が固定されている。On the other hand, the substrate mounting electrode 7 is provided with an electrostatic chuck 9 for electrostatically adsorbing the substrate on the upper part thereof, and a coolant channel 8 is formed therein. The refrigerant is supplied through the introduction pipe 8a and discharged through the discharge pipe 8b. The coolant cools the substrate to a predetermined temperature via the electrostatic chuck. The substrate mounting electrode 7 is connected to a second high frequency power supply 15 for bias control of the substrate and a DC power supply 17 for electrostatic attraction of the substrate. Further, a blocking capacitor 16 and a high frequency cut filter 18 are attached between the second high frequency power supply 15 and the direct current power supply 17 and the substrate mounting electrode 7 to prevent mutual interference. Further, the substrate mounting electrode 7 is formed with a through hole 20 through which the protruding pin 19 for moving the substrate 40 up and down when the substrate is carried in and out is formed, and the through hole is shielded from the atmosphere by the bellows 21 and the bottom plate 21a. The bottom plate 21a has a push-up pin 1
9 is fixed.
【００２２】図１のエッチング装置を用いたエッチング
処理は、例えば、次のようにして行う。ベローズ２１の
底板２１ａを駆動機構で押し上げ、突き上げピン１９を
上昇させる。この状態で、ゲートバルブ（不図示）を介
して基板を保持したロボットハンドを挿入し、基板を突
き上げピン１９上に載置する。続いて、突き上げピンを
下降させ、基板４０を静電チャック９の上に載置し、直
流電源１７から所定の電圧を印加して基板を静電吸着す
る。次いで、ガス供給系２２からガス導入管１０、対向
電極２を介して、プロセスガスを処理室１内に供給して
所定の圧力に設定する。その後、対向電極２に第１の高
周波電源１４からＶＨＦ帯（例えば６０ＭＨｚ）の高周
波電力を、基板載置電極７には第２の高周波電源１５か
らＨＦ帯（例えば１．６ＭＨｚ）の高周波電力をそれぞ
れ印加する。ＶＨＦ帯の高周波電力によって高密度のプ
ラズマが発生し、エッチングに寄与する活性種が生成す
る。一方、ＨＦ帯の高周波電力によってイオンエネルギ
をプラズマ密度とは独立に制御することができる。即
ち、２つの高周波電力を適宜選択することにより、目的
とするエッチング特性を得ることができる。The etching process using the etching apparatus of FIG. 1 is performed as follows, for example. The bottom plate 21a of the bellows 21 is pushed up by the drive mechanism to raise the push-up pin 19. In this state, a robot hand holding the substrate is inserted through a gate valve (not shown), and the substrate is placed on the push-up pin 19. Then, the push-up pin is lowered, the substrate 40 is placed on the electrostatic chuck 9, and a predetermined voltage is applied from the DC power supply 17 to electrostatically adsorb the substrate. Next, the process gas is supplied from the gas supply system 22 through the gas introduction pipe 10 and the counter electrode 2 into the processing chamber 1 to set a predetermined pressure. Thereafter, the counter electrode 2 is supplied with high frequency power in the VHF band (for example, 60 MHz) from the first high frequency power supply 14, and the substrate mounting electrode 7 is supplied with high frequency power in the HF band (for example, 1.6 MHz) from the second high frequency power supply 15. Apply each. High-frequency plasma in the VHF band generates high-density plasma, and active species that contribute to etching are generated. On the other hand, the ion energy can be controlled independently of the plasma density by the high frequency power in the HF band. That is, the target etching characteristics can be obtained by appropriately selecting the two high frequency powers.
【００２３】このようなエッチング処理を繰り返し行う
と、上述したように、ガス板の温度は平衡に達するまで
の間、徐々に上昇し、パターン形状も変化することにな
る。しかし、本実施形態のガス放出機構は冷却効率が改
善されるため、ガス板温度が平衡に達するまでの処理回
数を減少させることができる。例えば、０．１３μｍパ
ターンの場合、エッチング処理を開始してから安定した
エッチング特性が得られるまでの処理回数は１０回程度
となった。また、ガス板の温度分布がより均一となり、
基板面内でのエッチングレートやコンタクトホール形状
等の均一性が向上した。即ち、図１に示した装置構成と
することにより、ガス流分布の均一性とガス板の効率的
冷却との両方を同時に達成することが可能となり、より
微細パターンのエッチング処理を安定かつ生産性良く行
うことができる。When such an etching process is repeated, the temperature of the gas plate gradually rises and the pattern shape also changes until equilibrium is reached, as described above. However, since the cooling efficiency of the gas release mechanism of this embodiment is improved, the number of times of processing until the gas plate temperature reaches equilibrium can be reduced. For example, in the case of the 0.13 μm pattern, the number of treatments from the start of the etching treatment until the stable etching characteristics are obtained is about 10 times. Also, the temperature distribution of the gas plate becomes more uniform,
The uniformity of the etching rate and contact hole shape in the surface of the substrate was improved. That is, by adopting the apparatus configuration shown in FIG. 1, it is possible to achieve both the uniformity of gas flow distribution and the efficient cooling of the gas plate at the same time, and the etching process of a finer pattern can be performed stably and with high productivity. You can do it well.
【００２４】なお、本発明において、ガス板のガス吹出
孔６ａの直径は０．０１ｍｍ〜１ｍｍとするのが好まし
く、０．２ｍｍ以下とするのがより好ましい。この範囲
で、ガス吹出孔からガス流分布の制御が容易となり、均
一なガス流を形成することができる。なお、ガス板の厚
さは、通常１．０〜１５．０ｍｍである。また、冷却ジ
ャケットのガス通路５ａとガス板のガス吹き出し６ａと
の孔位置を相互に適当にずらせてコンダクタンスを小さ
くしてもよく、これにより流量が制限され、またプラズ
マが電極内部に入り込みにくくなる。これは、ガス板に
小孔を形成するのが困難な場合に好適に用いられる。な
お、ガス通路の孔径は、通常１．０〜３．０ｍｍが好適
に用いられる。また、ガス分散板４の小孔４ａの直径
は、０．１〜３．０ｍｍが用いられる。なお、小孔の直
径及び数（密度）は、ガス分散板の面内で圧力勾配を小
さくし、かつこの圧力勾配に見合った直径や数とするの
が好ましく、これにより、より均一なガス吹き出しを実
現することができる。In the present invention, the diameter of the gas outlet 6a of the gas plate is preferably 0.01 mm to 1 mm, more preferably 0.2 mm or less. Within this range, it becomes easy to control the gas flow distribution from the gas outlets, and a uniform gas flow can be formed. The thickness of the gas plate is usually 1.0 to 15.0 mm. Further, the conductance may be reduced by appropriately shifting the hole positions of the gas passage 5a of the cooling jacket and the gas blowout 6a of the gas plate, which limits the flow rate and makes it difficult for plasma to enter the electrode. . This is preferably used when it is difficult to form small holes in the gas plate. The hole diameter of the gas passage is preferably 1.0 to 3.0 mm. The diameter of the small holes 4a of the gas dispersion plate 4 is 0.1 to 3.0 mm. The diameter and number (density) of the small holes are preferably such that the pressure gradient in the plane of the gas distribution plate is small and the diameter and number are in proportion to this pressure gradient, which allows more uniform gas blowing. Can be realized.
【００２５】次に、本実施形態の他の態様例を図３〜図
５に示す。図１では、ガス板６と冷却ジャケット５とを
直接接触させる構成としたが、図３に示すように、両者
の間に熱伝導性が高く、かつ柔軟性のある伝熱シート２
６を介在させてもよい。このような伝熱シートを介在さ
せることにより、伝熱シートが微少の凹凸に入り込み、
実質的な接触面積が増大して熱伝達率が向上する。伝熱
シートとしては、厚さ１０〜５００μｍのインジウム等
の金属シートやシリコン樹脂、導電性ゴム等の高分子シ
ート等が用いられる。Next, another example of this embodiment is shown in FIGS. In FIG. 1, the gas plate 6 and the cooling jacket 5 are in direct contact with each other, but as shown in FIG. 3, the heat transfer sheet 2 having high thermal conductivity and flexibility between them is used.
6 may be interposed. By interposing such a heat transfer sheet, the heat transfer sheet penetrates into minute unevenness,
The substantial contact area is increased and the heat transfer coefficient is improved. As the heat transfer sheet, a metal sheet of indium or the like having a thickness of 10 to 500 μm, a polymer sheet of silicon resin, conductive rubber or the like is used.
【００２６】図４は、図１のガス板把持機構の代わり
に、静電吸着機構を設けたものである。これは、誘電体
の内部に双極電極２７ａを配置した静電チャック２７を
冷却ジャケット５に取り付け、双極電極２７ａに電源２
８から所定の電圧を印加し、ガス板を静電吸着により固
定する方法である。静電チャックを用いることにより、
ガス板全体をより均一な力で押しつけることができるた
め、冷却の効率及び均一性はさらに向上する。また、ガ
ス板の交換も容易となる。なお、静電チャックは、双極
電極を用いたものに限らないことは言うまでもない。In FIG. 4, an electrostatic adsorption mechanism is provided instead of the gas plate gripping mechanism of FIG. This is because the electrostatic chuck 27 having the bipolar electrode 27a arranged inside the dielectric is attached to the cooling jacket 5, and the bipolar electrode 27a is supplied with the power supply 2.
This is a method of applying a predetermined voltage from No. 8 and fixing the gas plate by electrostatic attraction. By using an electrostatic chuck,
Since the entire gas plate can be pressed with a more uniform force, cooling efficiency and uniformity are further improved. Also, replacement of the gas plate becomes easy. Needless to say, the electrostatic chuck is not limited to the one using a bipolar electrode.
【００２７】図５に示したガス放出機構は、ガス板６及
び冷却ジャケット５の対向する面に、互いに嵌合する凹
凸部２９を形成して両者の接触面積を増加させ、熱伝導
を改善したものである。この構造は、ガス板が部分的に
加熱され熱で曲がろうとしても、凹凸の嵌め合い部分が
曲がりを抑制する。同時に、曲がりの応力が嵌め合い部
分での接触面積及び圧力を増加させる方向に働き、熱伝
達が増加するため、従来の問題点、即ち、ガス板の曲が
りによりその部分に隙間が生じ、その結果温度がさらに
上昇して温度分布が増加するという問題を防ぐことがで
きる。なお、以上の実施形態のガス分散機構は、冷却ジ
ャケット上部の空間内に１又は複数のガス分散板を配置
する構成としたが、本発明においては、必ずしもガス分
散板は必要ではない。即ち、ガス導入管と冷却ジャケッ
トとの間に単に空間を設けるようにしてもよい。In the gas release mechanism shown in FIG. 5, the concavo-convex portions 29 which are fitted to each other are formed on the opposing surfaces of the gas plate 6 and the cooling jacket 5 to increase the contact area between them and improve the heat conduction. It is a thing. In this structure, even if the gas plate is partially heated and bent due to heat, the fitting portion of the unevenness suppresses the bending. At the same time, the bending stress acts in the direction of increasing the contact area and pressure in the fitting part, and heat transfer increases, so that the conventional problem, that is, the bending of the gas plate causes a gap in that part, resulting in The problem that the temperature further rises and the temperature distribution increases can be prevented. Although the gas dispersion mechanism of the above embodiment has a configuration in which one or a plurality of gas distribution plates are arranged in the space above the cooling jacket, the gas distribution plate is not necessarily required in the present invention. That is, a space may be simply provided between the gas introduction pipe and the cooling jacket.
【００２８】本発明の第２の実施形態を図６に示す。本
実施形態のガス放出機構は、ガスの上流側から、１又は
複数のガス分散板４からなる第１のガス分散機構、冷却
ジャケット５、第２のガス分散機構１１、ガス板６の順
序で配置した構造となり、第２の分散機構を配置した点
が上記第１の実施形態と異なる。冷却ジャケット５とガ
ス板６との間に第２のガス分散機構を設けることによ
り、冷媒流路の大型化、即ち冷却能力の増大を図りつ
つ、ガス流分布の均一化のために冷媒流路５ｂの真下に
もガス吹出孔を配置できる構造としたものである。A second embodiment of the present invention is shown in FIG. The gas discharge mechanism of the present embodiment includes, in order from the gas upstream side, a first gas dispersion mechanism including one or a plurality of gas dispersion plates 4, a cooling jacket 5, a second gas dispersion mechanism 11, and a gas plate 6. The structure is arranged, and the point that the second dispersion mechanism is arranged is different from the first embodiment. By providing the second gas dispersion mechanism between the cooling jacket 5 and the gas plate 6, the refrigerant flow passage is made larger in size, that is, the cooling capacity is increased, and at the same time, the refrigerant flow passage is made uniform in gas flow distribution. The structure is such that a gas blowout hole can be arranged just below 5b.
【００２９】この第２の分散機構１１は、例えば、冷却
ジャケット５のガス通路５ａに対応して多数の小孔１１
ａを形成した第１の円板と、ガス板６のガス吹出孔６ａ
に対応する小孔１１ｃとガス通路５ａを通して供給され
るガスを小孔１１ｃに送るための分岐用凹部１１ｂを形
成した第２の円板とを銀ロウ付けやインジウム等による
ボンディングにより貼り付けることにより作製すること
ができる。この第２の分散機構は、例えば、多数のネジ
により全面を均等な力で冷却ジャケットに取り付けられ
る。このような構造とすることにより、冷却ジャケット
に大きな冷媒流路５ｂを形成することができ、しかも、
ガス吹出孔を高密度（好ましくは、１ｃｍ２に１個以
上）に形成することができるため、ガス流分布の均一性
を維持しつつ高い冷却効果を得ることができる。なお、
第２の分散機構としては、上記第２の円板だけを用いる
構成であって良い。また、固定方法もネジでなくロウ付
け、ボンディングによる方法を用いても良い。The second dispersion mechanism 11 has a large number of small holes 11 corresponding to the gas passages 5a of the cooling jacket 5, for example.
a first disk having a formed therein and a gas outlet 6a of the gas plate 6
By attaching a small hole 11c corresponding to the above and a second disk having a branching concave portion 11b for sending the gas supplied through the gas passage 5a to the small hole 11c by silver brazing or bonding with indium or the like. Can be made. This second dispersion mechanism is attached to the cooling jacket with a uniform force over the entire surface by, for example, a large number of screws. With such a structure, it is possible to form the large refrigerant flow path 5b in the cooling jacket, and moreover,
Since the gas blowout holes can be formed at a high density (preferably one or more per 1 cm 2 ), a high cooling effect can be obtained while maintaining the uniformity of the gas flow distribution. In addition,
The second dispersion mechanism may be configured to use only the second disc described above. The fixing method may be brazing or bonding instead of screws.
【００３０】第２の実施形態は、第２のガス分散機構を
冷却ジャケットとは別個に設けた構成としたが、冷却ジ
ャケット自体にガス分散機構を形成しても良い。この構
成例を図７，８に示す。図７（ａ）及び７（ｂ）は、そ
れぞれ、ガス放出機構の模式的断面図及びＡ−Ａ矢視図
である。図７の構成例では、冷媒流路５ｂの真下に形成
したガス吹出孔６ａ１とガス通路５ａと連通するように
分岐用溝３１を冷却ジャケットに形成し、冷媒流路５ｂ
直下にもガス吹出孔を配置できる構造としたものであ
る。In the second embodiment, the second gas dispersion mechanism is provided separately from the cooling jacket, but the gas dispersion mechanism may be formed in the cooling jacket itself. An example of this configuration is shown in FIGS. 7 (a) and 7 (b) are a schematic cross-sectional view and an AA arrow view of the gas release mechanism, respectively. In the configuration example of FIG. 7, the branch groove 31 is formed in the cooling jacket so as to communicate with the gas outlet hole 6a1 formed immediately below the refrigerant passage 5b and the gas passage 5a.
The structure is such that gas outlets can be arranged directly below.
【００３１】ガス通路５ａを分岐用溝３１を介して複数
のガス吹出孔６ａ１に連結させる構造とすることによ
り、即ち、一つのガス通路５ａからガス板の複数のガス
吹出孔６ａ、６ａ１にガスを導くようにガス板と冷却ジ
ャケットの接触面部に分岐用溝３１を設けることによ
り、冷媒流路真下にもガス吹出孔６ａ１を配置すること
が可能となる。このようにして、ガス流の均一化と冷却
効果の両者を同時に改善したものである。ここで、ガス
通路５ａの下の吹出孔６ａと分岐用溝３１につながる吹
出孔（即ち、冷媒流路真下のガス吹出孔）６ａ１とで
は、コンダクタンスに差が生じガス吹き出し量に差が生
じる場合がある。この場合は、ガス通路５ａ直下の孔径
を小さくするか、なくすことにより全体のガス流均一性
を確保することができる。なお、ガス分岐用溝３１の幅
は、均一なガス流形成及び冷却効率の観点から、０．１
〜２ｍｍ程度とするのが好ましい。With the structure in which the gas passage 5a is connected to the plurality of gas outlets 6a1 through the branching grooves 31, that is, the gas is discharged from one gas passage 5a to the plurality of gas outlets 6a, 6a1 of the gas plate. By providing the branching groove 31 in the contact surface portion between the gas plate and the cooling jacket so as to guide the gas, it is possible to dispose the gas outlet hole 6a1 just below the refrigerant flow path. In this way, both the homogenization of the gas flow and the cooling effect are improved at the same time. Here, in the case where there is a difference in conductance between the blow-out hole 6a below the gas passage 5a and the blow-out hole connected to the branch groove 31 (that is, the gas blow-out hole directly below the refrigerant flow path) 6a1, there is a difference in the gas blow-out amount. There is. In this case, the overall gas flow uniformity can be ensured by reducing or eliminating the hole diameter immediately below the gas passage 5a. The width of the gas branching groove 31 is 0.1 from the viewpoint of uniform gas flow formation and cooling efficiency.
It is preferably about 2 mm.
【００３２】図８の構成例は、ガス通路の分岐通路３１
を冷却ジャケット内部に形成し、これをガス吹出孔６ａ
１に接続したものである。このような構造にすることに
より、図７に比べ冷却効率は更に向上する。このような
構造の冷却ジャケットは、例えば、冷媒流路５ｂとガス
通路５ａを形成した部分と、ガス吹出孔６ａ，６ａ１及
びガス分岐用溝３１を形成した部分を銀ロウ等のロウ付
けや、インジウムなどの柔軟性のある低融点金属や半田
などでボンデイングして一体化することにより作製する
ことができる。また、熱伝達は小さくなるが、熱伝導性
のある高分子ゴムや繊維状の金属を含むゴム等を挟んだ
り、これらで接着してもよい。In the configuration example of FIG. 8, the branch passage 31 of the gas passage is shown.
Is formed inside the cooling jacket, and this is formed into the gas outlet 6a.
It is connected to 1. With such a structure, the cooling efficiency is further improved as compared with FIG. 7. In the cooling jacket having such a structure, for example, a portion where the coolant flow path 5b and the gas passage 5a are formed and a portion where the gas blowout holes 6a and 6a1 and the gas branching groove 31 are formed are brazed with silver solder or the like, It can be manufactured by bonding with a flexible low melting point metal such as indium or solder, and integrating them. Further, although the heat transfer is small, a polymer rubber having a heat conductivity or a rubber containing a fibrous metal may be sandwiched or adhered by these.
【００３３】本発明の第３の実施形態を図９を用いて説
明する。本実施形態では、冷却ジャケット５のガス板側
を円板状に切削し、この空間を第２のガス分散機構１１
とし、ガス板の冷却をガス板と冷却ジャケット間の熱伝
導に加えて、処理に用いるガスを介した熱伝達を利用す
る構成としたものである。このためには、第２の分散機
構（円板状空間）１１の厚さを０．１ｍｍ以下とし、内
部の圧力を１００Ｐａ以上とするのが好ましい。このよ
うに構成することにより、処理に用いるガスを介した冷
却ジャケット５とガス板６との熱伝達が大きく増加し、
ガス板の冷却効率を一層向上させることができる。な
お、圧力の上限は機械的強度に問題がなければ特に制限
はないが、通常１０ｋＰａ程度以下の圧力が用いられ、
２〜４ｋＰａとするのが好ましい。このように、第２分
散機構１１内部の圧力は処理室１内部と比べて高くなる
ことから、冷却ジャケット５及びガス板６間でのガスリ
ークを抑制するためのＯ−リング４１等のシール材を配
置するのが好ましい。また、第２の分散機構１１内部の
圧力を測定するために、上記空間１１は、例えば、水冷
ジャケット５，枠体３，絶縁体４６，処理室壁１’及び
連結部材４４を貫通する通路４２を通して圧力計４５と
連通されており、部材間にはＯ−リング４３が配置され
ている。ただし、供給圧力と第２分散機構内部圧力との
相関関係を実験又は計算により予め調べておき、供給圧
力を測定することにより第２分散機構内部の圧力を求め
るようにしてもよい。なお、第２の分散機構は、上述し
たように、冷却ジャケット面を切削して形成できるが、
リング状の円板を外周部に配置して空間を形成してもよ
い。また、この空間は円板状に限らず、部分的にガス板
と冷却ジャケットとが接触する形状であってもよい。A third embodiment of the present invention will be described with reference to FIG. In this embodiment, the gas plate side of the cooling jacket 5 is cut into a disc shape, and this space is cut into the second gas dispersion mechanism 11
In addition to cooling the gas plate in addition to heat conduction between the gas plate and the cooling jacket, heat transfer through the gas used in the process is utilized. For this purpose, it is preferable that the thickness of the second dispersion mechanism (disk-shaped space) 11 is 0.1 mm or less and the internal pressure is 100 Pa or more. With this configuration, the heat transfer between the cooling jacket 5 and the gas plate 6 through the gas used for the treatment is greatly increased,
The cooling efficiency of the gas plate can be further improved. The upper limit of the pressure is not particularly limited as long as there is no problem in mechanical strength, but a pressure of about 10 kPa or less is usually used,
It is preferably 2 to 4 kPa. As described above, the pressure inside the second dispersion mechanism 11 is higher than that inside the processing chamber 1, so that a sealing material such as an O-ring 41 for suppressing gas leakage between the cooling jacket 5 and the gas plate 6 is used. It is preferably arranged. Further, in order to measure the pressure inside the second dispersion mechanism 11, the space 11 is provided with, for example, a passage 42 passing through the water cooling jacket 5, the frame 3, the insulator 46, the processing chamber wall 1 ′ and the connecting member 44. Through the pressure gauge 45, and an O-ring 43 is arranged between the members. However, the correlation between the supply pressure and the internal pressure of the second dispersion mechanism may be investigated in advance by experiments or calculations, and the internal pressure of the second dispersion mechanism may be determined by measuring the supply pressure. Although the second dispersion mechanism can be formed by cutting the cooling jacket surface as described above,
You may arrange | position a ring-shaped disk in an outer peripheral part and form a space. Further, this space is not limited to the disc shape, and may be a shape in which the gas plate and the cooling jacket are partially in contact with each other.
【００３４】以上の実施の形態においては、ガス板６の
材質として、Ｓｉ、ＳｉＯ２、カーボン等の非金属が好
適に用いられる。これらは加工し難く割れやすい材料で
はあるが、上記実施形態に示した構成とすることによ
り、ガス板６自身にガス分散溝等を形成する必要はなく
なり、また、取り付け時や処理中の熱履歴に起因するガ
ス板の破損を回避することができる。但し、加工可能な
範囲であれば、ガス板自体に設けても良いことは言うま
でもない。また、例えば、シリコン酸化膜のエッチング
においては、ガス板をＳｉ等のスカベンジャー材質とす
るのが好ましく、これらが処理中に発生するフッ素ラジ
カルを消費するためレジストの細り等が抑えられ、より
微細なパターンのエッチング処理が可能となる。さら
に、冷媒には特に制限はなく、例えば、水、フロリナー
ト（商品名）等が用いられる。なお、エッチング処理に
おいては、冷媒による冷却とＨｅガス等の伝熱ガスによ
る冷却を併用した構成は、基板の冷却にも好適に用いら
れる。In the above embodiment, the gas plate 6 is preferably made of a non-metal such as Si, SiO 2 or carbon. These are materials that are difficult to process and easily crack, but with the configuration shown in the above embodiment, it is not necessary to form a gas dispersion groove or the like in the gas plate 6 itself, and heat history during mounting or during processing It is possible to avoid damage to the gas plate due to However, it goes without saying that the gas plate itself may be provided as long as it can be processed. Further, for example, in etching a silicon oxide film, it is preferable that the gas plate is made of a scavenger material such as Si. Since these consume the fluorine radicals generated during processing, the thinning of the resist is suppressed, and a finer particle is obtained. The pattern can be etched. Further, the refrigerant is not particularly limited and, for example, water, Fluorinert (trade name), or the like is used. In addition, in the etching process, a configuration in which cooling with a coolant and cooling with a heat transfer gas such as He gas are used together is also suitably used for cooling the substrate.
【００３５】以上述べてきた本発明のガス放出機構は、
エッチング装置のみならず、プラズマＣＶＤ装置、アッ
シング装置、熱ＣＶＤ装置等、ガスを用いた種々の表面
処理装置に適用することができ、この一例として、熱Ｃ
ＶＤ装置に適用した構成例を本発明の第４の実施形態と
して図１０に示す。図１０は、熱ＣＶＤ装置の模式的断
面図であり、ガス放出機構及び基板載置機構のいずれに
も加熱機構が設けられる。ここで、第１の実施例と同じ
機構の説明は省略する。ガス放出機構２は、ガス分散機
構４、内部にヒータ３２ｂが組み込まれた加熱機構３２
及びガス板６から構成され、ガス板は図２に示した把持
機構（不図示）で固定されている。また基板載置機構７
には、上部に静電チャック９が取り付けられ、内部に抵
抗体等のヒータ３３が取り付けられている。基板４０
は、電源３４からヒータ３３に通電することにより所定
の温度に加熱される。第１の実施形態と同様にプロセス
ガスを導入しつつ、ヒーター用電源３５で加熱機構３２
のヒーター３２ｂに通電すると、ガス板６は効率よく均
一に加熱され、適度に加熱分解したプロセスガスがガス
孔６ａから均一に流れ出し、基板に均一に良質な膜をつ
けることができる。なお、図１〜９で説明したガス板、
ガス通路、第１及び第２のガス分散機構の形状、材質等
は、熱ＣＶＤ装置にも適用されるが、この場合は加熱温
度に対し十分な耐熱性を有する材質が選択される。The gas releasing mechanism of the present invention described above is
It can be applied not only to an etching apparatus but also to various surface treatment apparatuses using a gas, such as a plasma CVD apparatus, an ashing apparatus, and a thermal CVD apparatus.
A configuration example applied to a VD device is shown in FIG. 10 as a fourth embodiment of the present invention. FIG. 10 is a schematic cross-sectional view of the thermal CVD apparatus, and a heating mechanism is provided in both the gas releasing mechanism and the substrate mounting mechanism. Here, description of the same mechanism as that of the first embodiment is omitted. The gas releasing mechanism 2 includes a gas dispersing mechanism 4 and a heating mechanism 32 having a heater 32b incorporated therein.
And the gas plate 6, and the gas plate is fixed by the gripping mechanism (not shown) shown in FIG. Also, the substrate mounting mechanism 7
An electrostatic chuck 9 is attached to the upper part of the, and a heater 33 such as a resistor is attached inside. Board 40
Is heated to a predetermined temperature by energizing the heater 33 from the power source 34. While introducing the process gas as in the first embodiment, the heating power source 35 is used to heat the heating mechanism 32.
When the heater 32b is energized, the gas plate 6 is efficiently and uniformly heated, and the appropriately decomposed process gas flows out uniformly from the gas holes 6a, so that a good quality film can be uniformly formed on the substrate. In addition, the gas plate described in FIGS.
The shapes, materials, etc. of the gas passages, the first and second gas dispersion mechanisms are also applied to the thermal CVD apparatus, but in this case, a material having sufficient heat resistance to the heating temperature is selected.
【００３６】また、以上は、平行平板型の表面処理装置
について説明してきたが、ガス放出機構をドーム型や円
柱型、矩形、円筒状、多角柱状、多角錐状、円錐状、円
錐台状、多角錐台状、円形等の種々の形状にすることも
できる。Although the parallel plate type surface treatment apparatus has been described above, the gas releasing mechanism may be a dome type, a column type, a rectangular shape, a cylindrical shape, a polygonal column shape, a polygonal pyramid shape, a conical shape, a truncated cone shape, It can also have various shapes such as a truncated pyramid shape and a circular shape.
【００３７】[0037]
【発明の効果】以上述べてきたように、本発明のガス放
出機構を用いることにより、ガス板のガス吹出孔からの
ガス吹き出し量を均一とし、かつガス板を効率よく均一
に加熱又は冷却することができる。このため、ガス板の
熱による曲がりや割れを防止することができるととも
に、エッチンクにおいては、エッチングレートやレジス
ト選択比、ホール内選択比、コンタクトホール形状を基
板全面で均一にすることができる。また、熱ＣＶＤ、プ
ラズマＣＶＤやアッシング処理においても、均一な処理
速度を実現することが可能となる。As described above, by using the gas releasing mechanism of the present invention, the amount of gas blown out from the gas blowing holes of the gas plate is made uniform, and the gas plate is heated or cooled efficiently and uniformly. be able to. Therefore, it is possible to prevent the gas plate from being bent or broken by heat, and in etching, the etching rate, the resist selection ratio, the hole selection ratio, and the contact hole shape can be made uniform over the entire surface of the substrate. Further, it is possible to realize a uniform processing speed in the thermal CVD, plasma CVD and ashing processing.
【図１】本発明の第１の実施形態を示す模式的断面図で
ある。FIG. 1 is a schematic cross-sectional view showing a first embodiment of the present invention.
【図２】本発明のガス板把持機構の一例を示す模式図で
ある。FIG. 2 is a schematic view showing an example of a gas plate gripping mechanism of the present invention.
【図３】ガス放出機構の他の構成例を示す模式的断面図
である。FIG. 3 is a schematic cross-sectional view showing another configuration example of the gas release mechanism.
【図４】ガス放出機構の他の構成例を示す模式的断面図
である。FIG. 4 is a schematic cross-sectional view showing another configuration example of the gas release mechanism.
【図５】ガス放出機構の他の構成例を示す模式的断面図
である。FIG. 5 is a schematic cross-sectional view showing another configuration example of the gas discharge mechanism.
【図６】本発明の第２の実施形態を示す模式的断面図で
ある。FIG. 6 is a schematic sectional view showing a second embodiment of the present invention.
【図７】ガス放出機構の他の構成例を示す模式的断面図
である。FIG. 7 is a schematic cross-sectional view showing another configuration example of the gas discharge mechanism.
【図８】ガス放出機構の他の構成例を示す模式的断面図
である。FIG. 8 is a schematic cross-sectional view showing another configuration example of the gas discharge mechanism.
【図９】本発明の第３の実施形態を示す模式的断面図で
ある。FIG. 9 is a schematic sectional view showing a third embodiment of the present invention.
【図１０】本発明の第４の実施形態を示す模式的断面図
である。FIG. 10 is a schematic sectional view showing a fourth embodiment of the present invention.
【図１１】従来のエッチング装置のガス放出機構を示す
模式的断面図である。FIG. 11 is a schematic cross-sectional view showing a gas releasing mechanism of a conventional etching apparatus.
１ 処理室、 １’ 処理室壁、 ２ ガス放出機構（対向電極）、 ３ 枠体、 ４ ガス分散機構（ガス分散板）、 ５ 冷却ジャケット、 ５ａ ガス通路、 ５ｂ 冷媒流路、 ６ ガス板、 ６ａ ガス吹出孔、 ７ 基板載置電極（基板載置機構）、 ８ 冷媒流路、 ９ 静電チャック、 １０ ガス導入管、 １１ 第２の分散機構、 １２ａ，１２ｂ 絶縁体、 １３ バルブ、 １４，１５ 高周波電源 １７ 直流電源、 １９ 突き出しピン、 ２１ ベローズ、 ２２ ガス供給系、 ２４ 環状留め具、 ２５ ネジ、 ２６ 伝熱性シート、 ２７ 静電チャック、 ２７ａ 双極電極、 ２９ 凹凸、 ３１ ガス分岐用溝（通路）、 ３２ 加熱機構、 ３２ｂ、３３ ヒータ、 ４０ 基板、 ４１、４３ Ｏ−リング、 ４２ 通路、 ４４ 連結部材、 ４５ 圧力計、 ４６ 絶縁体。 1 processing room, 1'processing chamber wall, 2 gas release mechanism (counter electrode), 3 frame, 4 gas dispersion mechanism (gas dispersion plate), 5 cooling jacket, 5a gas passage, 5b refrigerant flow path, 6 gas plates, 6a gas outlet, 7 substrate mounting electrode (substrate mounting mechanism), 8 refrigerant flow paths, 9 electrostatic chuck, 10 gas introduction pipe, 11 Second distribution mechanism, 12a, 12b insulator, 13 valves, 14,15 High frequency power supply 17 DC power supply, 19 protruding pin, 21 Bellows, 22 gas supply system, 24 annular fasteners, 25 screws, 26 heat transfer sheet, 27 electrostatic chuck, 27a bipolar electrode, 29 unevenness, 31 gas branch groove (passage), 32 heating mechanism, 32b, 33 heater, 40 substrates, 41, 43 O-ring, 42 passages, 44 connecting member, 45 pressure gauge, 46 Insulator.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 金子 一秋 東京都府中市四谷５丁目８番１号 アネル バ株式会社内 (72)発明者 近藤 大輔 東京都府中市四谷５丁目８番１号 アネル バ株式会社内 (72)発明者 森田 修 東京都府中市四谷５丁目８番１号 アネル バ株式会社内 Ｆターム(参考） 4K030 EA05 FA03 FA10 JA01 JA09 KA17 KA25 KA26 KA46 5F004 AA01 BA04 BB11 BB29 BB32 BC03 CA09 DB03 5F045 AA03 EC01 EC05 EC09 EF05 EF11 EJ05 EK10 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Kazuki Kaneko 5-8 Yotsuya, Fuchu-shi, Tokyo Anel Within BA Co., Ltd. (72) Inventor Daisuke Kondo 5-8 Yotsuya, Fuchu-shi, Tokyo Anel Within BA Co., Ltd. (72) Inventor Osamu Morita 5-8 Yotsuya, Fuchu-shi, Tokyo Anel Within BA Co., Ltd. F-term (reference) 4K030 EA05 FA03 FA10 JA01 JA09 KA17 KA25 KA26 KA46 5F004 AA01 BA04 BB11 BB29 BB32 BC03 CA09 DB03 5F045 AA03 EC01 EC05 EC09 EF05 EF11 EJ05 EK10
Claims (9)
ガス放出機構を対向して配置した処理室と、該処理室内
部を排気する排気手段と、前記ガス放出機構にガスを供
給するためのガス供給手段と、からなり、前記ガス放出
機構を通して前記処理室内部に導入されるガスにより前
記基板を処理する表面処理装置において、 前記ガス放出機構は、上流側から、前記ガス供給手段と
連通するガス分散機構、多数のガス通路を有しかつ冷媒
流路又はヒータが設けられたガス板の冷却又は加熱機
構、及び前記多数のガス通路と連通する多数のガス吹出
孔を有するガス板の順に配置した構成とし、前記ガス板
を、静電吸着機構又は前記ガス板の周辺部を把持する把
持部材により、前記ガス板の冷却又は加熱機構に固定し
たことを特徴とする表面処理装置。1. A processing chamber in which a substrate mounting mechanism for mounting a substrate inside and a gas discharging mechanism are arranged so as to face each other, exhaust means for exhausting the inside of the processing chamber, and gas is supplied to the gas discharging mechanism. And a gas supply unit for processing the substrate with the gas introduced into the processing chamber through the gas release mechanism, wherein the gas release mechanism is connected to the gas supply unit from the upstream side. A gas distribution mechanism that communicates, a cooling or heating mechanism for a gas plate that has a large number of gas passages and is provided with a refrigerant passage or a heater, and a gas plate that has a large number of gas outlets that communicate with the large number of gas passages. A surface treatment apparatus, wherein the gas plates are arranged in order, and the gas plates are fixed to a cooling or heating mechanism for the gas plates by an electrostatic adsorption mechanism or a gripping member that grips a peripheral portion of the gas plate.
ガス放出機構を対向して配置した処理室と、該処理室内
部を排気する排気手段と、前記ガス放出機構にガスを供
給するためのガス供給手段と、からなり、前記ガス放出
機構を通して前記処理室内部に導入されるガスにより前
記基板を処理する表面処理装置において、 前記ガス放出機構を、上流側から、前記ガス供給手段と
連通する第１のガス分散機構、多数のガス通路を有しか
つ冷媒流路又はヒータが設けられたガス板の冷却又は加
熱機構、第２のガス分散機構、及び前記ガス通路の数よ
りも多数のガス吹出孔を有するガス板の順に配置し、前
記第２のガス分散機構により前記ガス通路と前記ガス吹
出孔とを連通させる構成とし、前記ガス板を、静電吸着
機構又は前記ガス板の周辺部を把持する把持部材によ
り、前記ガス板の冷却又は加熱機構に固定したことを特
徴とする表面処理装置。2. A processing chamber in which a substrate mounting mechanism for mounting a substrate inside and a gas discharging mechanism are arranged so as to face each other, exhaust means for exhausting the inside of the processing chamber, and gas is supplied to the gas discharging mechanism. A gas supply unit for processing the substrate with the gas introduced into the processing chamber through the gas release mechanism, wherein the gas release mechanism is connected to the gas supply unit from the upstream side. A first gas distribution mechanism in communication, a gas plate cooling or heating mechanism having a plurality of gas passages and provided with a refrigerant passage or a heater, a second gas dispersion mechanism, and more than the number of the gas passages. The gas plates having the gas outlets are arranged in this order, and the gas passages are communicated with the gas outlets by the second gas dispersion mechanism, and the gas plates are the electrostatic adsorption mechanism or the gas plate. Around The gripping member for lifting surface processing apparatus, characterized in that fixed to cooling or heating mechanism of the gas plate.
真下部分に、前記ガス吹出孔を形成したことを特徴とす
る請求項２に記載の表面処理装置。3. The surface treatment apparatus according to claim 2, wherein the gas blowing hole is formed in a portion of the gas plate directly below the coolant flow path or the heater.
１ｍｍ以下の空間とし、該空間の圧力が１００Ｐａ以上
となるように構成したことを特徴とする請求項２又は３
に記載の表面処理装置。4. The second gas dispersion mechanism has a thickness of 0.
A space of 1 mm or less, and the pressure of the space is 100 Pa or more.
The surface treatment apparatus according to.
れ、該ガス放出機構に高周波電力を供給することにより
プラズマを発生させて処理を行うことを特徴とする請求
項１〜４のいずれか１項に記載の表面処理装置。5. The gas discharge mechanism is connected to a high frequency power source, and high frequency power is supplied to the gas discharge mechanism to generate plasma for processing. The surface treatment apparatus according to item.
ｍとしたことを特徴とする請求項１〜５のいずれか１項
に記載の表面処理装置。6. The diameter of the gas outlet is 0.01 to 1 m.
The surface treatment apparatus according to any one of claims 1 to 5, wherein m is m.
いは前記第２のガス分散機構との接触面に互いに嵌合す
る凹凸部を設けたことを特徴とする請求項１〜６のいず
れか１項に記載の表面処理装置。7. A concavo-convex portion which is fitted to each other is provided on a contact surface between the gas plate and the cooling or heating mechanism or the second gas dispersion mechanism. The surface treatment apparatus according to item.
トを介して前記冷却又は加熱機構にあるいは前記第２の
ガス分散機構に固定したことを特徴とする請求項１〜７
のいずれか１項に記載の表面処理装置。8. The gas plate is fixed to the cooling or heating mechanism or the second gas dispersing mechanism via a heat transfer sheet having flexibility.
The surface treatment apparatus according to any one of 1.
又はカーボンからなることを特徴とする請求項１〜９の
いずれか１項に記載の表面処理装置。9. The gas plate is made of Si, SiO 2 , or SiC.
Or it consists of carbon, The surface treatment apparatus of any one of Claims 1-9 characterized by the above-mentioned.
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|---|---|---|---|
| JP2002247948A JP4082720B2 (en) | 2001-09-10 | 2002-08-28 | Substrate surface treatment equipment |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-273027 | 2001-09-10 | ||
| JP2001273027 | 2001-09-10 | ||
| JP2002247948A JP4082720B2 (en) | 2001-09-10 | 2002-08-28 | Substrate surface treatment equipment |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007271006A Division JP2008047939A (en) | 2001-09-10 | 2007-10-18 | Substrate surface processing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003158120A true JP2003158120A (en) | 2003-05-30 |
| JP4082720B2 JP4082720B2 (en) | 2008-04-30 |
Family
ID=26621889
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002247948A Expired - Fee Related JP4082720B2 (en) | 2001-09-10 | 2002-08-28 | Substrate surface treatment equipment |
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| JP2007070679A (en) * | 2005-09-06 | 2007-03-22 | Tohoku Univ | Film deposition apparatus, film deposition apparatus system, film deposition method, and manufacturing method of electronic equipment or organic electroluminescence element |
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