JPH05234944A - Wafer temperature control method and equipment - Google Patents
Wafer temperature control method and equipmentInfo
- Publication number
- JPH05234944A JPH05234944A JP4031794A JP3179492A JPH05234944A JP H05234944 A JPH05234944 A JP H05234944A JP 4031794 A JP4031794 A JP 4031794A JP 3179492 A JP3179492 A JP 3179492A JP H05234944 A JPH05234944 A JP H05234944A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- temperature
- electrostatic attraction
- control method
- temperature control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、マイクロ波プラズマエ
ッチング装置等のウエハ温度制御方法及び装置に係り、
半導体素子基板（ウエハ）等の試料の処理の均一化を図
るのに好適なウエハ温度制御方法及び装置に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer temperature control method and apparatus such as a microwave plasma etching apparatus,
The present invention relates to a wafer temperature control method and apparatus suitable for uniforming processing of a sample such as a semiconductor element substrate (wafer).
【０００２】[0002]
【従来の技術】従来のウエハ温度制御技術は、例えば特
開昭６２−１２０９３１号公報に記載のように、真空中
でウエハを電極上に載置し、ウエハと電極間に冷却ガス
を流しウエハの温度を制御するようになっている。ま
た、ウエハの搬送用の押し上げ機構には冷却手段を設け
ていなかった。2. Description of the Related Art A conventional wafer temperature control technique is disclosed in, for example, Japanese Patent Application Laid-Open No. 62-120931, in which a wafer is placed on an electrode in a vacuum and a cooling gas is passed between the wafer and the electrode. It is designed to control the temperature of. Further, the push-up mechanism for transferring the wafer is not provided with the cooling means.
【０００３】[0003]
【発明が解決しようとする課題】上記従来技術では、電
極中央の押し上げ機構が挿入される部分ではギャップが
広く、しかも、処理中に電極との間に温度差を生じるた
めにウエハ中央の温度が高くなり、処理の均一化が不十
分であるという課題があった。In the above prior art, the gap in the center of the electrode into which the pushing-up mechanism is inserted is wide, and a temperature difference occurs between the electrode and the electrode during processing. There is a problem that the cost becomes high and the uniformity of the treatment is insufficient.
【０００４】本発明の目的は、ウエハを処理する温度を
より均一にするウエハ温度制御方法及び装置を提供する
ことにある。An object of the present invention is to provide a wafer temperature control method and apparatus for making a wafer processing temperature more uniform.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
に、電極表面に複数のリング状の溝とこの溝を互いに連
結する放射状の溝を設け、さらに、一番内側のリング状
の溝と電極中央の冷却ガス導入孔の間に溝の形成されて
いない部分を設けたものである。To achieve the above object, a plurality of ring-shaped grooves and radial grooves connecting the grooves to each other are provided on the surface of the electrode, and further, the innermost ring-shaped groove is formed. A portion in which no groove is formed is provided between the cooling gas introduction holes at the center of the electrode.
【０００６】[0006]
【作用】ウエハ中央から外周に向かって、熱通過率に関
係するウエハ裏面の冷却ガスの圧力に分布を与えること
が可能となるので、ギャップおよび温度の違いによって
生じるウエハ内の温度分布の不均一を補正することがで
きる。Since the pressure of the cooling gas on the back surface of the wafer, which is related to the heat transfer rate, can be distributed from the center of the wafer to the outer circumference, the temperature distribution in the wafer becomes uneven due to the difference in the gap and the temperature. Can be corrected.
【０００７】[0007]
【実施例】以下、本発明の一実施例を適用したいわゆる
有磁場マイクロ波エッチング装置の構成を図１から図４
により説明する。図１は装置の全体構成、図２，図３は
静電吸着電極の形状、図４はウエハ裏面のＨｅガスの圧
力分布を示したものである。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The configuration of a so-called magnetic field microwave etching apparatus to which an embodiment of the present invention is applied will be described below with reference to FIGS.
Will be explained. 1 shows the overall structure of the apparatus, FIGS. 2 and 3 show the shape of the electrostatic adsorption electrode, and FIG. 4 shows the pressure distribution of He gas on the back surface of the wafer.
【０００８】エッチング処理されるウエハ１は、搬送装
置（図示省略）によりエッチング処理室の静電吸着電極
２上に載置される。その後、ウエハ１のエッチング処理
は放電管３内に導入したプロセスガス４をマイクロ波５
とソレノイド６の相互作用によりプラズマ７化し、さら
に、静電吸着電極２を固定している下部電極８に高周波
電源９により高周波を印加してウエハ１に入射するイオ
ンのエネルギーを制御しながら行う。The wafer 1 to be etched is placed on the electrostatic attraction electrode 2 in the etching chamber by a transfer device (not shown). After that, in the etching process of the wafer 1, the process gas 4 introduced into the discharge tube 3 is introduced into the microwave 5
Plasma 7 is formed by the interaction of the solenoid 6 and the solenoid 6, and a high frequency power is applied to the lower electrode 8 fixing the electrostatic attraction electrode 2 by a high frequency power source 9 to control the energy of the ions incident on the wafer 1.
【０００９】一方、エッチングされるウエハ１の冷却
は、スイッチ１０をオンして静電吸着電極２表面に設け
た絶縁膜１１に直流電源１２により直流電圧を印加した
後、前記した方法によりプラズマ７を発生させてウエハ
１をプラズマ７を介して接地することにより、絶縁膜１
１とウエハ１の間に生ずる静電吸着力によりウエハ１を
支持した状態でマスフローコントロラー１３を開いてＨ
ｅガス１４をウエハ１裏面に導入することにより行われ
る。また、下部電極８はサーキュレーター１５により冷
媒１６を循環させることにより温度調節されている。On the other hand, the wafer 1 to be etched is cooled by applying a DC voltage from the DC power supply 12 to the insulating film 11 provided on the surface of the electrostatic attraction electrode 2 by turning on the switch 10 and then plasma 7 by the method described above. Is generated and the wafer 1 is grounded via the plasma 7,
1 and the wafer 1 is supported by the electrostatic attraction force generated between the wafer 1 and the wafer 1, and the mass flow controller 13 is opened to move the H
This is performed by introducing the e-gas 14 into the back surface of the wafer 1. The temperature of the lower electrode 8 is adjusted by circulating the coolant 16 by the circulator 15.
【００１０】そして、エッチング処理が終了したウエハ
１は、スイッチ１０をオフして押し上げ機構１７を上昇
することにより静電吸着電極２から取り外され、搬送装
置（図示省略）により他の処理室等に搬送される。After the etching process is completed, the wafer 1 is removed from the electrostatic attraction electrode 2 by turning off the switch 10 and raising the push-up mechanism 17, and then transferred to another processing chamber or the like by a transfer device (not shown). Be transported.
【００１１】図２，図３により本発明に使用する静電吸
着電極２の形状について説明する。静電吸着電極２表面
には、処理中のウエハ１の温度分布の均一化を図るため
に２本のリング状の溝１８，１９と、この溝１８，１９
を結ぶ放射状の溝２０が設けてあり、Ｈｅガス１４の導
入孔２１とリング状の溝１８の間には溝の形成されてな
い円環状部２２がある。また、表面にはウエハ１を静電
吸着するためにアルミナ等の絶縁膜１１がコーテイング
されている。The shape of the electrostatic attraction electrode 2 used in the present invention will be described with reference to FIGS. On the surface of the electrostatic attraction electrode 2, two ring-shaped grooves 18 and 19 are provided in order to make the temperature distribution of the wafer 1 being processed uniform, and these grooves 18 and 19 are provided.
A radial groove 20 connecting the two is provided, and an annular portion 22 in which no groove is formed is provided between the introduction hole 21 of the He gas 14 and the ring-shaped groove 18. An insulating film 11 made of alumina or the like is coated on the surface to electrostatically attract the wafer 1.
【００１２】次に、本発明により処理中のウエハ１の温
度分布の均一化の効果について説明する。図４は、ウエ
ハ１と静電吸着電極２の間の熱通過率に関係するウエハ
１裏面におけるＨｅガス１４の径方向の圧力分布を示し
たものであり、ウエハ１裏面に導入されたＨｅガス１４
はウエハ１中心から外周に向かって流れる。まず、Ｈｅ
ガス１４の導入孔２１からリング状の溝１８の間では、
溝が形成されていないためにコンダクタンスが非常に小
さくＨｅガス１４の流量に応じた圧力損失を生じ、裏面
圧力はウエハ１中心に比べて急激に低くなる。そして、
リング状の溝１８から１９までは、放射状の溝２０で連
結されているためにコンダクタンスが非常に大きくなっ
ており、この間の裏面圧力はほぼ一定値になる。そし
て、リング状の溝１９から外ではエッチング処理室と同
じ圧力まで低下する。Next, the effect of making the temperature distribution of the wafer 1 being processed uniform according to the present invention will be described. FIG. 4 shows a radial pressure distribution of the He gas 14 on the back surface of the wafer 1 related to the heat transfer rate between the wafer 1 and the electrostatic attraction electrode 2. He gas introduced to the back surface of the wafer 1 is shown in FIG. 14
Flows from the center of the wafer 1 toward the outer periphery. First, He
Between the introduction hole 21 of the gas 14 and the ring-shaped groove 18,
Since the groove is not formed, the conductance is very small and a pressure loss according to the flow rate of the He gas 14 is generated, and the back surface pressure is drastically lower than that in the center of the wafer 1. And
Since the ring-shaped grooves 18 to 19 are connected by the radial grooves 20, the conductance is extremely large, and the back surface pressure during this time is substantially constant. Then, outside the ring-shaped groove 19, the pressure is reduced to the same pressure as in the etching processing chamber.
【００１３】以上より、分子流条件（Ｈｅガス１４の平
均自由行程に比べてウエハ１と静電吸着電極２のすきま
およびウエハ１と押し上げ機構１７のすきまが非常に小
さい）が成立する領域ではウエハ１裏面の圧力と熱通過
率はほぼ比例関係にあり、ウエハ１中心部の熱通過率を
静電吸着電極２に吸着されている部分より大きくでき、
押し上げ機構１７とウエハ１のギャップおよび押し上げ
機構１７と静電吸着電極２の温度差によりウエハ１に生
じる温度分布の不均一を補正することができる。From the above, in the region where the molecular flow condition is satisfied (the clearance between the wafer 1 and the electrostatic adsorption electrode 2 and the clearance between the wafer 1 and the pushing-up mechanism 17 are very small compared to the mean free path of the He gas 14), the wafer is 1 The pressure on the back surface and the heat transfer rate are almost proportional to each other, and the heat transfer rate at the central part of the wafer 1 can be made larger than that at the part attracted to the electrostatic adsorption electrode 2.
It is possible to correct the non-uniformity of the temperature distribution generated on the wafer 1 due to the gap between the push-up mechanism 17 and the wafer 1 and the temperature difference between the push-up mechanism 17 and the electrostatic attraction electrode 2.
【００１４】上記実施例では、ウエハ１の支持を静電吸
着力により行ったが、本発明は重力を利用して支持する
装置の場合にも同様に適用できる。Although the wafer 1 is supported by the electrostatic attraction force in the above embodiment, the present invention can be similarly applied to the case of supporting the apparatus by utilizing gravity.
【００１５】[0015]
【発明の効果】本発明によれば、エッチングされるウエ
ハの温度分布の均一化を図ることができる。According to the present invention, the temperature distribution of the wafer to be etched can be made uniform.
【図１】本発明を適用するエッチング装置の全体構成を
示す正面図である。FIG. 1 is a front view showing the overall configuration of an etching apparatus to which the present invention is applied.
【図２】本発明に使用する静電吸着電極の平面図であ
る。FIG. 2 is a plan view of an electrostatic attraction electrode used in the present invention.
【図３】図２の側面図である。FIG. 3 is a side view of FIG.
【図４】本発明によるウエハ裏面の圧力分布を示す図で
ある。FIG. 4 is a diagram showing a pressure distribution on the back surface of a wafer according to the present invention.
１…ウエハ、２…静電吸着電極、１８，１９…リング状
の溝、２０…放射状の溝、２２…円環状部。1 ... Wafer, 2 ... Electrostatic adsorption electrode, 18, 19 ... Ring-shaped groove, 20 ... Radial groove, 22 ... Annular part.
Claims (3)
ガスを供給して処理中のウエハの温度を制御するウエハ
温度制御方法において、前記冷却ガスの圧力にウエハ裏
面内で分布を与え、ギャップの違いによる熱抵抗の違い
を補正するようにしたことを特徴とするウエハ温度制御
方法。1. A wafer temperature control method in which a wafer is placed and a cooling gas is supplied between the wafer and the wafer to control the temperature of the wafer being processed. A wafer temperature control method, characterized in that a difference in thermal resistance due to a difference in gap is corrected.
ガスを供給して処理中のウエハの温度を制御するウエハ
温度制御方法において、前記冷却ガスの圧力にウエハ裏
面内で分布を与え、温度の違いによる熱抵抗の違いを補
正するようにしたことを特徴とするウエハ温度制御方
法。2. A wafer temperature control method in which a wafer is placed and a cooling gas is supplied between the wafer and the wafer to control the temperature of the wafer being processed. A wafer temperature control method, characterized in that a difference in thermal resistance due to a difference in temperature is corrected.
ガスを供給してウエハの温度を制御するウエハ温度制御
装置において、前記冷却ガスの圧力にウエハ裏面内で分
布を与えるために、静電吸着電極にコンダクタンスの異
なるガス流動溝を設けたことを特徴とするウエハ温度制
御装置。3. A wafer temperature controller for mounting a wafer and supplying a cooling gas between the wafer and the wafer to control the temperature of the wafer, in order to give a distribution of the pressure of the cooling gas on the back surface of the wafer. A wafer temperature control device characterized in that gas flow grooves having different conductances are provided in the electrostatic attraction electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4031794A JPH05234944A (en) | 1992-02-19 | 1992-02-19 | Wafer temperature control method and equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4031794A JPH05234944A (en) | 1992-02-19 | 1992-02-19 | Wafer temperature control method and equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05234944A true JPH05234944A (en) | 1993-09-10 |
Family
ID=12340979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4031794A Pending JPH05234944A (en) | 1992-02-19 | 1992-02-19 | Wafer temperature control method and equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05234944A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07169825A (en) * | 1993-12-15 | 1995-07-04 | Nec Corp | Electrostatic attracting apparatus |
| KR100362995B1 (en) * | 1993-09-16 | 2002-11-29 | 가부시끼가이샤 히다치 세이사꾸쇼 | Substrate holding system and substrate holding method |
| US6524428B2 (en) | 1993-09-16 | 2003-02-25 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
| JP2006253703A (en) * | 2006-04-07 | 2006-09-21 | Toto Ltd | Electrostatic chuck and insulating substrate electrostatic attraction treatment method |
| JP2011155170A (en) * | 2010-01-28 | 2011-08-11 | Panasonic Corp | Plasma processing apparatus |
| JP2012129547A (en) * | 2012-02-25 | 2012-07-05 | Tokyo Electron Ltd | Substrate mounting table, substrate processing apparatus, and temperature control method |
| CN103928372A (en) * | 2014-04-22 | 2014-07-16 | 上海华力微电子有限公司 | Corrosion-resistant wafer cleaning device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01251735A (en) * | 1988-03-31 | 1989-10-06 | Toshiba Corp | Electrostatic chuck apparatus |
| JPH01298721A (en) * | 1988-05-27 | 1989-12-01 | Tokuda Seisakusho Ltd | Vacuum processor |
-
1992
- 1992-02-19 JP JP4031794A patent/JPH05234944A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01251735A (en) * | 1988-03-31 | 1989-10-06 | Toshiba Corp | Electrostatic chuck apparatus |
| JPH01298721A (en) * | 1988-05-27 | 1989-12-01 | Tokuda Seisakusho Ltd | Vacuum processor |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6610170B2 (en) | 1993-09-16 | 2003-08-26 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
| US6676805B2 (en) | 1993-09-16 | 2004-01-13 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
| KR100362995B1 (en) * | 1993-09-16 | 2002-11-29 | 가부시끼가이샤 히다치 세이사꾸쇼 | Substrate holding system and substrate holding method |
| US6524428B2 (en) | 1993-09-16 | 2003-02-25 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
| US6544379B2 (en) | 1993-09-16 | 2003-04-08 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
| US6610171B2 (en) | 1993-09-16 | 2003-08-26 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
| US6645871B2 (en) | 1993-09-16 | 2003-11-11 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
| US6899789B2 (en) | 1993-09-16 | 2005-05-31 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
| JPH07169825A (en) * | 1993-12-15 | 1995-07-04 | Nec Corp | Electrostatic attracting apparatus |
| JP2626539B2 (en) * | 1993-12-15 | 1997-07-02 | 日本電気株式会社 | Electrostatic suction device |
| JP2006253703A (en) * | 2006-04-07 | 2006-09-21 | Toto Ltd | Electrostatic chuck and insulating substrate electrostatic attraction treatment method |
| JP2011155170A (en) * | 2010-01-28 | 2011-08-11 | Panasonic Corp | Plasma processing apparatus |
| JP2012129547A (en) * | 2012-02-25 | 2012-07-05 | Tokyo Electron Ltd | Substrate mounting table, substrate processing apparatus, and temperature control method |
| CN103928372A (en) * | 2014-04-22 | 2014-07-16 | 上海华力微电子有限公司 | Corrosion-resistant wafer cleaning device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |