JP2003142606A5 - - Google Patents

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Publication number
JP2003142606A5
JP2003142606A5 JP2001341367A JP2001341367A JP2003142606A5 JP 2003142606 A5 JP2003142606 A5 JP 2003142606A5 JP 2001341367 A JP2001341367 A JP 2001341367A JP 2001341367 A JP2001341367 A JP 2001341367A JP 2003142606 A5 JP2003142606 A5 JP 2003142606A5
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JP
Japan
Prior art keywords
region
semiconductor substrate
misfet
impurity concentration
concentration distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001341367A
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English (en)
Japanese (ja)
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JP2003142606A (ja
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Publication date
Application filed filed Critical
Priority to JP2001341367A priority Critical patent/JP2003142606A/ja
Priority claimed from JP2001341367A external-priority patent/JP2003142606A/ja
Publication of JP2003142606A publication Critical patent/JP2003142606A/ja
Publication of JP2003142606A5 publication Critical patent/JP2003142606A5/ja
Pending legal-status Critical Current

Links

JP2001341367A 2001-11-07 2001-11-07 半導体記憶装置 Pending JP2003142606A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001341367A JP2003142606A (ja) 2001-11-07 2001-11-07 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001341367A JP2003142606A (ja) 2001-11-07 2001-11-07 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2003142606A JP2003142606A (ja) 2003-05-16
JP2003142606A5 true JP2003142606A5 (de) 2005-06-30

Family

ID=19155397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001341367A Pending JP2003142606A (ja) 2001-11-07 2001-11-07 半導体記憶装置

Country Status (1)

Country Link
JP (1) JP2003142606A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100636669B1 (ko) 2004-06-25 2006-10-23 주식회사 하이닉스반도체 디램 메모리 셀의 제조방법
JP5493303B2 (ja) * 2008-07-09 2014-05-14 富士通セミコンダクター株式会社 半導体装置及びその製造方法
KR20210100492A (ko) * 2020-02-06 2021-08-17 주식회사 엘지에너지솔루션 이차전지 제조방법 및 그를 포함하는 전지팩 제조방법

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