JP2003142370A - Method for cleaning apparatus with reticle in contact - Google Patents
Method for cleaning apparatus with reticle in contactInfo
- Publication number
- JP2003142370A JP2003142370A JP2001335602A JP2001335602A JP2003142370A JP 2003142370 A JP2003142370 A JP 2003142370A JP 2001335602 A JP2001335602 A JP 2001335602A JP 2001335602 A JP2001335602 A JP 2001335602A JP 2003142370 A JP2003142370 A JP 2003142370A
- Authority
- JP
- Japan
- Prior art keywords
- reticle
- cleaning
- contact
- layer
- mpa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、投影露光装置の露
光の際に使用されるレチクルや露光マスクなどのレチク
ル状物が接する装置のクリーニング方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning an apparatus which is in contact with a reticle-like object such as a reticle or an exposure mask used for exposure of a projection exposure apparatus.
【０００２】[0002]
【従来の技術】半導体などの微細加工処理は、ウェハの
上に形成したレジスト材をマスクとしてエッチングやイ
オン注入が行われる。レジスト材を所望のマスクとする
ためには、一般的には所望のパターニングを施したレチ
クルをマスクとして露光する投影露光装置が用いられ
る。その際、ウェハやレチクルが僅かにでも傾いている
と焦点深度の関係でパターンがぼやけるという問題があ
る。ウェハの傾きに関しては、ウェハやチャックテーブ
ルの平坦度が出ている場合には、ウェハ裏面や搬送系上
にパーティクルが付着していることが主な原因であるた
め、新品のダミーウェハを数十枚連続搬送させたり、装
置を停止させ、搬送系を人が発塵を押さえた専用の拭き
布と薬液とを使用し、クリーニング処理をする必要があ
った。このため、稼働率低下や多大な労力が必要になる
という問題があった。これらの問題を解決するため、ウ
ェハ裏面をブラシなどで物理的にクリーニング除去する
方法が考案されている。2. Description of the Related Art For fine processing of semiconductors and the like, etching and ion implantation are carried out using a resist material formed on a wafer as a mask. In order to use the resist material as a desired mask, a projection exposure apparatus that exposes a reticle having a desired pattern as a mask is generally used. At that time, if the wafer or reticle is slightly tilted, the pattern may be blurred due to the depth of focus. Regarding the tilt of the wafer, if the wafer or the chuck table has flatness, the main cause is that particles adhere to the back surface of the wafer or the transfer system.Therefore, dozens of new dummy wafers It was necessary to carry out a cleaning process by continuously carrying or stopping the apparatus, and using a special wiping cloth and a chemical solution in which a person suppressed dust generation in the carrying system. Therefore, there is a problem that the operating rate is reduced and a great deal of labor is required. In order to solve these problems, a method of physically cleaning and removing the back surface of the wafer with a brush or the like has been devised.
【０００３】[0003]
【発明が解決しようとする課題】ウェハ裏面をブラシな
どで物理的に擦りクリーニング除去する方法は、前述の
課題を克服する有効な方法である。しかしこの方法では
パーティクルが付着した基板からパーティクルを取り除
くだけであり、レチクルの傾きにはなんら効果がないと
いう問題があった。従って、人手による拭き掃除が必要
となるが、通常、露光装置やレチクルストッカーのレチ
クルをセットする部位は、容易に手が入らない構造にな
っており、掃除の際には分解と再組立てが必要であり、
時間と多大な労力が必要であるという問題もあった。さ
らに対象パーティクルが極めて小さいため、人手による
拭き掃除では完全には取り切れないばかりか、新たにパ
ーティクルを付着させてしまうという恐れもあった。本
発明は、このような事情に照らし、レチクルの接触部位
に付着している異物を簡便かつ確実にクリーニングする
方法を提供することを目的としている。A method of physically rubbing and removing the back surface of a wafer with a brush or the like is an effective method for overcoming the above-mentioned problems. However, this method only removes the particles from the substrate to which the particles adhere, and there is a problem in that there is no effect on the tilt of the reticle. Therefore, manual wiping is required, but normally the reticle setting part of the exposure device and reticle stocker has a structure that is not easily accessible, and disassembly and reassembly are required during cleaning. Yes,
There was also a problem that it required a lot of time and effort. Further, since the target particles are extremely small, there is a fear that the particles cannot be completely removed by manual wiping and that particles are newly attached. In view of such circumstances, it is an object of the present invention to provide a method for easily and surely cleaning foreign matter attached to a contact portion of a reticle.
【０００４】[0004]
【課題を解決するための手段】本発明者らは、上記の目
的を達成するために、鋭意検討した結果、レチクルまた
はレチクル状物のこれらが被洗浄装置と接する部位に、
引張弾性率（試験法ＪＩＳ Ｋ７１２７に準ずる）が
０．９８〜４９００ＭＰａであるクリーニング層が設け
られた材料を設け，被洗浄装置内を搬送することにより
前記問題を生じることなく、さらに異物を簡便かつ確実
にクリーニングできることを見出し、本発明を完成する
に至った。Means for Solving the Problems The inventors of the present invention have conducted extensive studies in order to achieve the above-mentioned object, and as a result, as a result, a reticle or a reticle-like material is attached to a portion in contact with a device to be cleaned.
A material provided with a cleaning layer having a tensile elastic modulus (according to the test method JIS K7127) of 0.98 to 4900 MPa is provided and conveyed in the apparatus to be cleaned without causing the above-mentioned problems, and further foreign matter can be easily and easily obtained. They have found that they can be reliably cleaned, and have completed the present invention.
【０００５】即ち、本発明は、レチクルまたはレチクル
状物のこれらが被洗浄装置と接する部位に、引張弾性率
（試験法ＪＩＳ Ｋ７１２７に準ずる）が０．９８〜４
９００ＭＰａであるクリーニング層が設けられた材料を
設け、被洗浄装置内を搬送することを特徴とするレチク
ルが接する装置のクリーニング方法（請求項１）、レチ
クルまたはレチクル状物が接する装置が、レチクルスト
ッカーであることを特徴とする請求項１記載のクリーニ
ング方法（請求項２）、レチクルまたはレクチル状物が
接する装置が、露光装置であることを特徴とする請求項
１記載のクリーニング方法（請求項３）、クリーニング
層が設けられた材料が、支持体の片面に、引張弾性率
（試験法ＪＩＳ Ｋ７１２７に準ずる）が０．９８〜４
９００ＭＰａの粘着剤層がクリーニング層として設けら
れ、他面に通常の粘着剤層が設けられてなることを特徴
とする請求項１記載のクリーニング方法（請求項４）に
係るものである。That is, according to the present invention, the reticle or the reticle-like material has a tensile elastic modulus (according to the test method JIS K7127) of 0.98 to 4 at the portion in contact with the device to be cleaned.
A method for cleaning an apparatus in contact with a reticle, characterized in that a material provided with a cleaning layer having a pressure of 900 MPa is provided and conveyed in an apparatus to be cleaned (claim 1), an apparatus in contact with a reticle or a reticle-like object is The cleaning method according to claim 1 (claim 2), and the apparatus with which the reticle or reticle-like object is in contact is an exposure apparatus (claim 3). ), The material provided with the cleaning layer has a tensile elastic modulus (according to the test method JIS K7127) of 0.98 to 4 on one surface of the support.
The cleaning method according to claim 1 (claim 4), wherein a 900 MPa pressure-sensitive adhesive layer is provided as a cleaning layer, and a normal pressure-sensitive adhesive layer is provided on the other surface.
【０００６】[0006]
【発明の実施の形態】本発明においては、引張弾性率が
０．９８〜４９００ＭＰａ、好ましくは９．８〜３００
０ＭＰａ、さらに好ましくは１００〜２０００ＭＰａで
あるクリーニング層を用いることにより、搬送トラブル
を発生することなく、他方，適度な絶縁性を有するクリ
ーニング層により微細な異物を捕集，落下させることな
く確実に除去することができる。また、引張弾性率が
０．９８〜４９００ＭＰａであると、実質的に粘着性は
有しない。ここで実質的に粘着性を有しないとは、粘着
の本質を滑りに対する抵抗である摩擦としたとき、粘着
性の機能を代表する感圧性タックがないことを意味す
る。この感圧性タックは、例えばＤａｈｌｑｕｉｓｔの
基準に従うと、粘着性物質の引張弾性率が１ＭＰａまで
の範囲で発現する。従って、本発明においては、クリー
ニング層の引張弾性率が約１ＭＰａより大きくなるよう
に、その引張弾性率を特定範囲、すなわち０．９８〜４
９００ＭＰａ、範囲内に設計することにより、搬送トラ
ブルを発生させることなく、異物を除去することができ
る。ここで引張弾性率とは、試験法 ＪＩＳ Ｋ７１２
７に準じて測定したものである。また、引張弾性率が
０．９８〜４９００ＭＰａであるクリーニング層の厚み
は特に限定されないが、通常５〜１００μｍ程度であ
る。BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, the tensile modulus of elasticity is 0.98 to 4900 MPa, preferably 9.8 to 300.
By using a cleaning layer having a pressure of 0 MPa, more preferably 100 to 2000 MPa, it is possible to reliably remove fine foreign matters without collecting and dropping them by the cleaning layer having an appropriate insulating property without causing a transport trouble. can do. Further, when the tensile elastic modulus is 0.98 to 4900 MPa, there is substantially no tackiness. Here, “having substantially no tackiness” means that, when the essence of tackiness is friction, which is resistance to sliding, there is no pressure-sensitive tack that is representative of the tackiness function. According to Dahlquist's standard, for example, this pressure-sensitive tack develops in the range where the tensile elastic modulus of the adhesive substance is up to 1 MPa. Therefore, in the present invention, the tensile modulus of the cleaning layer is set to a specific range, that is, 0.98 to 4 so that the tensile modulus of the cleaning layer becomes larger than about 1 MPa.
By designing the pressure in the range of 900 MPa, it is possible to remove foreign substances without causing a transportation trouble. Here, the tensile modulus is the test method JIS K712.
It was measured according to 7. The thickness of the cleaning layer having a tensile elastic modulus of 0.98 to 4900 MPa is not particularly limited, but is usually about 5 to 100 μm.
【０００７】かかるクリーニング層は、その引張弾性率
が前述の範囲内である限り、その材質等は特に限定され
ないが、紫外線や熱などの活性エネルギー源により架橋
反応や硬化が促進されて、その引張弾性率を大きくでき
るものが好ましい。 さらに、かかる架橋や硬化により
分子構造が三次元網状化してその粘着力が低下したもの
が好ましく、例えばシリコンウエハ（ミラー面）に対す
る１８０°引き剥がし粘着力が０．２０Ｎ（２０ｇ）／
１０ｍｍ以下、好ましくは０．０１０〜０．１０Ｎ（１
〜１０ｇ）／１０ｍｍ程度である。 この粘着力が、
０．２０Ｎ（２０ｇ）／ｍｍを超えると、搬送時に装置
内の被クリーニング部に接着して、搬送トラブルとなる
恐れがある。The material of the cleaning layer is not particularly limited as long as its tensile elastic modulus is within the above-mentioned range, but the crosslinking reaction and curing are promoted by an active energy source such as ultraviolet rays and heat, and the tensile strength of the cleaning layer is increased. It is preferable that the elastic modulus can be increased. Further, it is preferable that the molecular structure is three-dimensionally reticulated due to such crosslinking or curing to reduce the adhesive force, and for example, the 180 ° peeling adhesive force to a silicon wafer (mirror surface) is 0.20 N (20 g) /
10 mm or less, preferably 0.010 to 0.10 N (1
It is about 10 g) / 10 mm. This adhesive strength
If it exceeds 0.20 N (20 g) / mm, it may adhere to the portion to be cleaned in the apparatus during transportation, resulting in transportation trouble.
【０００８】かかるクリーニング層の具体例としては、
例えば感圧接着性ポリマーに分子内に不飽和二重結合を
１個以上有する化合物を含有させてなるものが好まし
い。また、かかる感圧接着性ポリマーとしては、例えば
アクリル酸、アクリル酸エステル、メタクリル酸、メタ
クリル酸エステルから選ばれる（メタ）アクリル酸及び
／又は（メタ）アクリル酸エステルを主モノマーとした
アクリル系ポリマーが挙げられる。このアクリル系ポリ
マーの合成にあたり、共重合モノマーとして分子内に不
飽和二重結合を２個以上有する化合物を用いるか、ある
いは合成後のアクリル系ポリマーに分子内に不飽和二重
結合を有する化合物を官能基間の反応で化学結合させる
などして、アクリル系ポリマーの分子内に不飽和二重結
合を導入しておくことにより、このポリマー自体も活性
エネルギーにより重合硬化反応に関与させるようにする
こともできる。Specific examples of such a cleaning layer include:
For example, a pressure-sensitive adhesive polymer containing a compound having at least one unsaturated double bond in the molecule is preferable. Examples of the pressure-sensitive adhesive polymer include acrylic polymers containing (meth) acrylic acid and / or (meth) acrylic acid ester selected from acrylic acid, acrylic acid ester, methacrylic acid, and methacrylic acid ester as a main monomer. Is mentioned. In synthesizing this acrylic polymer, a compound having two or more unsaturated double bonds in the molecule is used as a copolymerization monomer, or a compound having an unsaturated double bond in the molecule is used in the acrylic polymer after synthesis. By introducing an unsaturated double bond into the molecule of the acrylic polymer, such as by chemically bonding it through a reaction between functional groups, so that this polymer itself also participates in the polymerization-curing reaction with active energy. You can also
【０００９】ここで、分子内に不飽和二重結合を１個以
上有する化合物（以下、重合性不飽和化合物という）と
しては、不揮発性でかつ重量平均分子量が１００００以
下の低分子量体であるのがよく、特に硬化時の粘着剤層
の三次元網状化が効率よくなされるように、５０００以
下の分子量を有しているのが好ましい。Here, the compound having one or more unsaturated double bonds in the molecule (hereinafter referred to as a polymerizable unsaturated compound) is a low molecular weight compound which is nonvolatile and has a weight average molecular weight of 10,000 or less. In particular, it preferably has a molecular weight of 5,000 or less so that the three-dimensional reticulation of the pressure-sensitive adhesive layer can be efficiently performed during curing.
【００１０】また、粘着剤層に添加される重合開始剤
は、特に限定されず公知のものを使用でき、例えば活性
エネルギー源に熱を用いる場合は、ベンゾイルパーオキ
サイド、アゾビスイソブチロニトリルなどの熱重合開始
剤、また光を用いる場合は、ベンゾイル、ベンゾインエ
チルエーテル、シベンジル、イソプロピルベンゾインエ
ーテル、ベンゾフェノン、ミヒラーズケトンクロロチオ
キサントン、ドデシルチオキサントン、ジメチルチオキ
サントン、アセトフェノンジエチルケタール、ベンジル
ジメチルケタール、α−ヒドルキシシクロヒキシルフェ
ニルケトン、２−ヒドロキシジメチルフェニルプロパ
ン、２，２−ジメトキシ−２−フェニルアセトフェノン
などの光重合開始剤が挙げられる。The polymerization initiator added to the pressure-sensitive adhesive layer is not particularly limited, and known ones can be used. For example, when heat is used as an active energy source, benzoyl peroxide, azobisisobutyronitrile, etc. In the case of using a thermal polymerization initiator of benzoyl, benzoin ethyl ether, cibenzyl, isopropyl benzoin ether, benzophenone, Michler's ketone chlorothioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, acetophenone diethyl ketal, benzyl dimethyl ketal, α-hi Examples include photopolymerization initiators such as dorxycyclohexyl phenyl ketone, 2-hydroxydimethylphenyl propane, and 2,2-dimethoxy-2-phenylacetophenone.
【００１１】本発明のクリーニング方法におけるレクチ
ルなどに設ける材料としては、支持体の片面に、上記の
特定の粘着剤層がクリーニング層として設けられ、他面
に通常の粘着剤層が設けられたものが好ましい。 この
他面側の粘着剤層は、粘着機能を満たす限りその材質な
どは特に限定されず、通常の粘着剤（例えばアクリル
系、ゴム系など）を用いることができる。かかる構成と
することにより、クリーニング層が設けられた材料を、
通常の粘着剤層によりレクチルなどの特定部位に貼り付
けて、被洗浄装置内に搬送して、被洗浄部位に接触させ
てクリーニングすることができる。As a material to be provided on a reticle or the like in the cleaning method of the present invention, the above-mentioned specific pressure-sensitive adhesive layer is provided as a cleaning layer on one surface of the support, and a normal pressure-sensitive adhesive layer is provided on the other surface. Is preferred. The material of the pressure-sensitive adhesive layer on the other surface side is not particularly limited as long as it satisfies the pressure-sensitive adhesive function, and a normal pressure-sensitive adhesive (for example, acrylic type, rubber type, etc.) can be used. With such a configuration, the material provided with the cleaning layer is
It can be attached to a specific site such as a reticle by a normal pressure-sensitive adhesive layer, conveyed to the inside of the device to be cleaned, and brought into contact with the site to be cleaned for cleaning.
【００１２】また上記支持体としては特に限定されない
が、例えばポリエチレン、ポリエチレンテレフタレー
ト、アセチルセルロース、ポリカーボネート、ポリプロ
ピレン、ポリアミドなどのプラスチックフィルムなどが
挙げられる。 その厚みは通常１０〜１００μｍ程度で
ある。The support is not particularly limited, but examples thereof include plastic films such as polyethylene, polyethylene terephthalate, acetyl cellulose, polycarbonate, polypropylene and polyamide. Its thickness is usually about 10 to 100 μm.
【００１３】クリーニング層が設けられた材料が貼り付
けられるものはレクチル、その他露光マスクなどのレク
チル状物が挙げられる。Examples of materials to which the material provided with the cleaning layer is attached include reticle and reticle-like materials such as exposure masks.
【００１４】[0014]
【実施例】以下、本発明を実施例に基づいて説明する
が、本発明はこれらに限定されるものではない。 な
お、以下、部とあるのは重量部を意味するものとする。
実施例１
アクリル酸−２−エチルヘキシル７５部、アクリル酸メ
チル２０部、及びアクリル酸５部からなるモノマ―混合
液から得たアクリル系ポリマー（重量平均分子量７０
万）１００部に対して、ウレタンアクリレ―ト５０部、
及びジフエニルメタンジイソシアネ―ト３部、ベンジル
ジメチルケタール（チバ・スペシャリティケミカルズ
製：商品名：イルガキュア−６５１）３部を均一に混合
し、紫外線硬化型粘着剤溶液を得た。一方、上記粘着剤
からベンジルジメチルケタールを除いた以外は、上記と
同様にして通常の感圧性粘着剤溶液を得た。EXAMPLES The present invention will be described below based on examples, but the present invention is not limited thereto. In the following, "parts" means "parts by weight". Example 1 Acrylic polymer (weight average molecular weight 70%) obtained from a monomer mixture liquid consisting of 75 parts of 2-ethylhexyl acrylate, 20 parts of methyl acrylate, and 5 parts of acrylic acid.
10,000) For every 100 parts, 50 parts of urethane acrylate,
Further, 3 parts of diphenylmethane diisocyanate and 3 parts of benzyl dimethyl ketal (manufactured by Ciba Specialty Chemicals: trade name: Irgacure-651) were uniformly mixed to obtain a UV-curable adhesive solution. On the other hand, an ordinary pressure-sensitive adhesive solution was obtained in the same manner as above except that benzyl dimethyl ketal was removed from the above adhesive.
【００１５】この紫外線硬化型粘着剤溶液を、幅２５０
ｍｍ、厚み２５μｍの長尺ポリエステルフィルムＡの片
面（コロナ処理面）に、乾燥後の厚みが１５μｍになる
ように塗布してクリーニング層としての粘着剤層を設
け、その表面に片面がシリコーン系剥離剤にて処理され
たポリエステルフィルムＢ（厚さ３８μｍ、幅２５０m
m）からなる剥離フィルムの剥離処理面を貼りあわせて
シートＡを得た。This UV-curable adhesive solution has a width of 250
A long polyester film A having a thickness of 25 μm and a thickness of 25 μm is coated on one surface (corona-treated surface) so that the thickness after drying is 15 μm to provide a pressure-sensitive adhesive layer as a cleaning layer, and one surface is silicone-based peeling. Polyester film B (thickness 38 μm, width 250 m
The release-treated surface of the release film consisting of m) was attached to obtain a sheet A.
【００１６】このシートＡの他面に通常の粘着剤溶液を
乾燥後の厚みが１０μｍとなるように塗布し、その粘着
剤上に片面がシリコーン系剥離剤にて処理されたポリエ
ステルフィルムの剥離処理面を貼りあわせてレチクル接
着層付きテープを得た。A normal adhesive solution is applied to the other surface of the sheet A so that the thickness after drying becomes 10 μm, and the polyester film having one surface treated with a silicone-based release agent on the adhesive is peeled off. The surfaces were stuck together to obtain a tape with a reticle adhesive layer.
【００１７】上記にて作製したレチクル接着層付きテー
プに中心波長３６５ｎｍの紫外線を積算光量１０００ｍ
Ｊ／ｃｍ2照射して、紫外線硬化したクリーニング層を
有するレチクル接着層付きテープを得た。このクリーニ
ング層の引張弾性率は６００ＭＰａであった。このレチ
クル接着層付きテープのクリーニング層側のポリエステ
ルフィルムを剥がし、対角線長１５０ｍｍの石英板にレ
チクル接着層が接するように貼り合わせクリーニング機
能付き搬送用レチクルを作製したUltraviolet rays having a central wavelength of 365 nm are integrated into the tape with a reticle adhesive layer produced above as an integrated light amount of 1000 m.
J / cm 2 irradiation was performed to obtain a reticle adhesive layer-attached tape having a UV-cured cleaning layer. The tensile elastic modulus of this cleaning layer was 600 MPa. The polyester film on the cleaning layer side of the reticle adhesive layer-attached tape was peeled off, and a reticle having a cleaning function was prepared by laminating the reticle adhesive layer so that the reticle adhesive layer was in contact with a quartz plate having a diagonal length of 150 mm.
【００１８】次いで，クリーニング機能付き搬送用レチ
クルのクリーニング層のポリエステルフィルムＢを剥が
し、クリーニング面を下面（装置に接する面）に向け
て、半導体製造用の露光装置であるステッパー（ＮＳＲ
−２２０５ＥＸ１０Ｂ）にセットした後、パターンを形
成してあるレチクルをセットし、シリコンウェハ上に設
けた１μｍ厚のポジ型レジストを所定の条件で露光し、
現像した後、金属顕微鏡にてレジストパターン形状を観
察したところ、パーティクル起因のパターンの崩れはま
ったくなく、レチクルが装置と接する部位のクリーニン
グ効果が確認できた。Next, the polyester film B of the cleaning layer of the transport reticle with a cleaning function is peeled off, and the cleaning surface is directed to the lower surface (the surface in contact with the apparatus), which is a stepper (NSR) which is an exposure apparatus for semiconductor manufacturing.
-2205EX10B), set a reticle on which a pattern is formed, and expose a 1 μm-thick positive resist provided on a silicon wafer under predetermined conditions,
After the development, the resist pattern shape was observed with a metallurgical microscope. As a result, there was no collapse of the pattern due to particles, and the cleaning effect of the portion where the reticle was in contact with the apparatus was confirmed.
【００1９】[00119]
【実施例２】上記と同様にして、クリーニング機能付き
搬送用レチクルをレチクルストッカーに搬送ロボットに
て自動格納後直ちに出庫させ、装置に接したクリーニン
グ層表面を金属顕微鏡とＳＥＭにて観察したところ、搬
送前には付着していなかった各種サイズのパーティクル
が見られ、装置と接する部位のクリーニング効果が確認
できた。[Embodiment 2] In the same manner as described above, the transport reticle with a cleaning function was automatically stored in the reticle stocker by the transport robot and then immediately put out, and the surface of the cleaning layer in contact with the apparatus was observed with a metal microscope and SEM. Particles of various sizes which were not attached before the transfer were found, and the cleaning effect of the part in contact with the device was confirmed.
【００２０】[0020]
【発明の効果】以上のように本発明のクリーニング方法
によれば、クリーニング用のレチクルを確実に搬送でき
ると共に、レチクルが接する装置に付着しているパーテ
ィクルを簡便かつ確実に除去することができる。As described above, according to the cleaning method of the present invention, the cleaning reticle can be reliably transported, and the particles adhering to the device with which the reticle is in contact can be easily and reliably removed.
Claims (4)
被洗浄装置と接する部位に、引張弾性率（試験法ＪＩＳ
Ｋ７１２７に準ずる）が０．９８〜４９００ＭＰａで
あるクリーニング層が設けられた材料を設け、被洗浄装
置内を搬送することを特徴とするレチクルが接する装置
のクリーニング方法。1. A reticle or a reticle-like material has a tensile elastic modulus (Test Method JIS
A method for cleaning an apparatus in contact with a reticle, characterized in that a material provided with a cleaning layer having a K7127) of 0.98 to 4900 MPa is provided and the material is conveyed inside the apparatus to be cleaned.
置が、レチクルストッカーであることを特徴とする請求
項１記載のクリーニング方法。2. The cleaning method according to claim 1, wherein the device with which the reticle or the reticle-like object contacts is a reticle stocker.
置が、露光装置であることを特徴とする請求項１記載の
クリーニング方法。3. The cleaning method according to claim 1, wherein the device with which the reticle or reticle-like object contacts is an exposure device.
持体の片面に、引張弾性率（試験法ＪＩＳ Ｋ７１２７
に準ずる）が０．９８〜４９００ＭＰａの粘着剤層がク
リーニング層として設けられ、他面に通常の粘着剤層が
設けられてなることを特徴とする請求項１記載のクリー
ニング方法。4. A material provided with a cleaning layer has a tensile modulus of elasticity (Test method JIS K7127) on one surface of a support.
The cleaning method according to claim 1, wherein an adhesive layer having a pressure of 0.98 to 4900 MPa is provided as a cleaning layer, and a normal adhesive layer is provided on the other surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001335602A JP2003142370A (en) | 2001-10-31 | 2001-10-31 | Method for cleaning apparatus with reticle in contact |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001335602A JP2003142370A (en) | 2001-10-31 | 2001-10-31 | Method for cleaning apparatus with reticle in contact |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003142370A true JP2003142370A (en) | 2003-05-16 |
Family
ID=19150570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001335602A Pending JP2003142370A (en) | 2001-10-31 | 2001-10-31 | Method for cleaning apparatus with reticle in contact |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003142370A (en) |
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| US7593100B2 (en) | 2005-01-24 | 2009-09-22 | Nikon Corporation | Measuring method, measuring system, inspecting method, inspecting system, exposure method and exposure system, in which information as to the degree of the flatness of an object is pre-obtained |
| US20110159440A1 (en) * | 2009-12-25 | 2011-06-30 | Yumi Nakajima | Cleaning reticle, method for cleaning reticle stage, and method for manufacturing semiconductor device |
| WO2013035415A1 (en) * | 2011-09-05 | 2013-03-14 | 株式会社 東芝 | Reticle chuck cleaner and reticle chuck cleaning method |
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| JPWO2013035415A1 (en) * | 2011-09-05 | 2015-03-23 | 株式会社東芝 | Reticle chuck cleaner and reticle chuck cleaning method |
| US9808841B2 (en) | 2011-09-05 | 2017-11-07 | Toshiba Memory Corporation | Reticle chuck cleaner and reticle chuck cleaning method |
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