JP2003082306A - Adhesive film for semiconductor and its application - Google Patents

Adhesive film for semiconductor and its application

Info

Publication number
JP2003082306A
JP2003082306A JP2001281807A JP2001281807A JP2003082306A JP 2003082306 A JP2003082306 A JP 2003082306A JP 2001281807 A JP2001281807 A JP 2001281807A JP 2001281807 A JP2001281807 A JP 2001281807A JP 2003082306 A JP2003082306 A JP 2003082306A
Authority
JP
Japan
Prior art keywords
adhesive
semiconductor
film
weight
adhesive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001281807A
Other languages
Japanese (ja)
Inventor
Hiroshi Kirihara
博 桐原
Yoichi Hosokawa
羊一 細川
Michio Uruno
道生 宇留野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP2001281807A priority Critical patent/JP2003082306A/en
Publication of JP2003082306A publication Critical patent/JP2003082306A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Abstract

PROBLEM TO BE SOLVED: To provide an adhesive film formed on a base film having a low linear expansion coefficient, which does not cause warpage when it is bonded to a semiconductor substrate having a large adhesive area. SOLUTION: In the adhesive film for the semiconductor with a base film used in a sticking method of the film sticking to an area not less than half of the semiconductor substrate in the block, the film comprises the base film having the linear expansion coefficient at 30-180 deg.C being <=20 ppm/ deg.C and an adhesive layer formed thereon.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、低線膨張係数のベ
ースフィルムを備えた接着フィルムとその製造方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive film provided with a base film having a low coefficient of linear expansion and a method for manufacturing the same.

【０００２】[0002]

【従来の技術】近年、電子機器の小型化に伴い、これに
搭載する半導体パッケージは基板への高密度実装が要求
されるようになり、小型化・軽量化が進むと共に、ＣＳ
Ｐ（チップサイズパッケージ）やμＢＧＡ（ボールグリ
ッドアレイ）と呼ばれる小型パッケージの開発が進めら
れている。2. Description of the Related Art In recent years, with the miniaturization of electronic devices, semiconductor packages to be mounted on the electronic devices have been required to be mounted on a substrate at a high density.
Small packages called P (chip size package) and μBGA (ball grid array) are under development.

【０００３】小型パッケージを効率よく製造する方法と
して、シリコンウエハの面全体や幅広のＴＡＢテープに
接着フィルムを一括してラミネートで貼り付ける方法が
考案されている。As a method for efficiently manufacturing a small package, a method has been devised in which an adhesive film is collectively laminated and attached to the entire surface of a silicon wafer or a wide TAB tape.

【０００４】これらの方法では、接着フィルムを一括し
て貼り付けてからダイシング、スリットホール打ち抜き
等を行い、その後に接着フィルムのベースフィルムを剥
がしてその面へ半導体チップ、半導体基板等の貼り付け
を行う。In these methods, an adhesive film is attached in a batch, dicing, slit hole punching, and the like are performed, and then the base film of the adhesive film is peeled off, and a semiconductor chip, a semiconductor substrate, or the like is attached to the surface. To do.

【０００５】上記の製造方法では接着フィルムと被接着
体の接着面積が大きいため、線膨張係数の差から接着後
にそりが発生する問題が起きる。また、今後ＴＡＢテー
プの幅はさらに大きくなる傾向にあり、さらにそりは発
生しやすくなる。ウエハの場合は接着テープのキャリア
テープは剥がされるためそりは解消されるが、ＴＡＢテ
ープや半導体基板の場合はキャリアテープを剥がす前に
打ち抜きなどの工程が入るため、そりの影響がおきる。
そりが発生すると、ＴＡＢの打ち抜き穴の位置精度や取
り扱い性が悪くなり、歩留まり低下の原因となる。In the above manufacturing method, since the adhesion area between the adhesive film and the adherend is large, there is a problem that warpage occurs after the adhesion due to the difference in coefficient of linear expansion. Further, the width of the TAB tape tends to be further increased in the future, and the warp is more likely to occur. In the case of a wafer, the warp is eliminated because the carrier tape of the adhesive tape is peeled off. However, in the case of a TAB tape or a semiconductor substrate, a step such as punching is performed before peeling the carrier tape, so that the warpage is affected.
When the warpage occurs, the positional accuracy of the punched holes of the TAB and the handleability are deteriorated, and the yield is reduced.

【０００６】[0006]

【発明が解決しようとする課題】本発明は、接着面積の
大きい半導体基板への接着を行ったときにそりを生じさ
せることがない、低線膨張係数を有するベースフィルム
上に形成された接着フィルムを提供するものである。SUMMARY OF THE INVENTION The present invention is directed to an adhesive film formed on a base film having a low linear expansion coefficient, which does not cause warpage when adhered to a semiconductor substrate having a large adhesive area. Is provided.

【０００７】[0007]

【課題を解決するための手段】本発明は、次のものに関
する。 １．半導体基板の半分以上の面積に一括して貼り付けを
行う貼り付け方法に使用されるベースフィルム付き半導
体用接着フィルムであって、３０〜１８０℃での線膨張
係数が２０ｐｐｍ／℃以下であるベースフィルムとその
上に形成された接着剤層とを有してなる半導体用接着フ
ィルム。 ２．ベースフィルム上に形成される接着剤が、１８０℃
以下で被着体と接着することが可能な接着剤である項１
記載の半導体用接着フィルム。 ３．ベースフィルム上に形成された接着剤が、（１）エ
ポキシ樹脂及びその硬化剤１００重量部、（２）グリシ
ジル（メタ）アクリレートを２〜６重量％含み、Ｔｇ
（ガラス転移温度）が−１０℃以上で、かつ重量平均分
子量が８０万以上であるエポキシ基含有アクリル系共重
合体５０〜３００重量部、（３）硬化促進剤０．１〜１
０重量部、（４）カップリング剤０〜１０重量部を含有
してなる接着剤である項１又は２記載の半導体用接着フ
ィルム。 ４．ベースフィルム上に形成された接着剤が、フィラー
以外の成分１００体積部に対して無機フィラーを２〜２
０体積部含有してなる項１〜３のいずれかに記載の半導
体用接着フィルム。 ５．ベースフィルム上に形成された接着剤がＤＳＣ（示
差走査熱量測定）を用いて測定した場合に全硬化発熱量
の１０〜４０％の発熱を終えた状態してなる項１〜４の
いずれかに記載の半導体用接着フィルム。 ６．項１〜５のいずれかに記載の接着フィルムを半導体
搭載用基板上に備えた構造を有してなる接着フィルム付
き半導体搭載用基板。 ７．半導体搭載用基板が、有機フィルム上に配線を形成
したＴＡＢテープである項６記載の接着フィルム付き半
導体搭載用基板。 ８．項１〜５のいずれかに記載の接着フィルムを用い
て、半導体素子と半導体搭載用基板とを接着した構造を
有してなる半導体装置。The present invention relates to the following. 1. An adhesive film for a semiconductor with a base film, which is used in a bonding method for collectively bonding to an area of more than half of a semiconductor substrate, wherein the linear expansion coefficient at 30 to 180 ° C. is 20 ppm / ° C. or less. An adhesive film for a semiconductor, comprising a film and an adhesive layer formed thereon. 2. The adhesive formed on the base film is 180 ℃
Item 1 which is an adhesive capable of adhering to an adherend below
The adhesive film for a semiconductor described. 3. The adhesive formed on the base film contains (1) 100 parts by weight of an epoxy resin and its curing agent, (2) 2 to 6% by weight of glycidyl (meth) acrylate, and Tg
50 to 300 parts by weight of an epoxy group-containing acrylic copolymer having a (glass transition temperature) of -10 ° C or more and a weight average molecular weight of 800,000 or more, (3) a curing accelerator 0.1 to 1
Item 3. The adhesive film for a semiconductor according to item 1 or 2, which is an adhesive containing 0 part by weight and (4) 0 to 10 parts by weight of a coupling agent. 4. The adhesive formed on the base film contains 2 to 2 inorganic fillers per 100 parts by volume of components other than the filler.
Item 4. The adhesive film for a semiconductor according to any one of Items 1 to 3, which contains 0 part by volume. 5. In any one of Items 1 to 4, wherein the adhesive formed on the base film is in a state where heat generation of 10 to 40% of the total curing heat value is finished when measured using DSC (Differential Scanning Calorimetry). The adhesive film for a semiconductor described. 6. A semiconductor mounting substrate with an adhesive film, having a structure in which the adhesive film according to any one of items 1 to 5 is provided on a semiconductor mounting substrate. 7. Item 7. The semiconductor mounting substrate with an adhesive film according to Item 6, wherein the semiconductor mounting substrate is a TAB tape having wiring formed on an organic film. 8. A semiconductor device having a structure in which a semiconductor element and a semiconductor mounting substrate are bonded together using the adhesive film according to any one of items 1 to 5.

【０００８】[0008]

【発明の実施の形態】図１は本発明の接着剤１とベース
フィルム２の組み合わせで形成される接着フィルムの断
面図である。保護フィルム３は接着剤の種類により付属
させても構わない。図２は本発明の一実施例を示す半導
体搭載用配線基板の断面図を示す。（図２：μＢＧＡ構
造図）図２（ａ）は本発明の接着フィルム１を配線基板
の半導体チップ搭載面に備えた半導体搭載用配線基板に
半導体チップ６を接着させ、半導体チップのボンディン
グパッドに配線４の一部を半導体チップ接続部材７とし
て接続し封止材８により半導体チップの周囲を封止し外
部接続端子９を設けた半導体装置の断面図である。1 is a sectional view of an adhesive film formed by combining an adhesive 1 and a base film 2 of the present invention. The protective film 3 may be attached depending on the type of adhesive. FIG. 2 is a sectional view of a semiconductor-mounting wiring board showing an embodiment of the present invention. (FIG. 2: μBGA structure diagram) FIG. 2 (a) shows that the semiconductor film 6 is adhered to the semiconductor mounting wiring board provided with the adhesive film 1 of the present invention on the semiconductor chip mounting surface of the wiring board, and is used as a bonding pad of the semiconductor chip. FIG. 3 is a cross-sectional view of a semiconductor device in which a part of wiring 4 is connected as a semiconductor chip connecting member 7, the periphery of the semiconductor chip is sealed with a sealing material 8, and external connection terminals 9 are provided.

【０００９】本発明は、ベースフィルム上に接着剤を形
成した接着フィルムであって、３０℃〜１８０℃でのベ
ースフィルムの線膨張係数が２０ｐｐｍ／℃以下である
ことを特徴とする。線膨張係数の低いベースフィルムを
使用することにより、接着面積の大きいウエハ、半導体
基板等に貼り付けたときのそりを抑制することができ
る。そりを抑制するためにはベースフィルムの線膨張係
数が１５ｐｐｍ／℃以下であることが好ましく、１０ｐ
ｐｍ／℃であることがより好ましい。線膨張係数が２０
ｐｐｍ／℃より大きいと、貼り付け時と室温の温度差に
よりそりが発生する。下限は特に制限はないが、通常
０．１ｐｐｍ／℃である。The present invention is an adhesive film in which an adhesive is formed on a base film, and the linear expansion coefficient of the base film at 30 ° C to 180 ° C is 20 ppm / ° C or less. By using a base film having a low coefficient of linear expansion, it is possible to suppress warpage when attached to a wafer, a semiconductor substrate, or the like having a large adhesion area. In order to suppress warpage, the linear expansion coefficient of the base film is preferably 15 ppm / ° C. or less, and 10 p
More preferably, it is pm / ° C. Linear expansion coefficient is 20
If it is higher than ppm / ° C., warpage occurs due to the temperature difference between the time of attachment and the room temperature. The lower limit is not particularly limited, but is usually 0.1 ppm / ° C.

【００１０】本発明において、線膨張係数とは、定圧下
で温度を変えたときに物体の空間的広がりの増加する割
合をいう。温度をＴ、その固体の長さＬをとすると、そ
の線膨張係数は次の式In the present invention, the coefficient of linear expansion means the rate at which the spatial expansion of an object increases when the temperature is changed under constant pressure. Let T be the temperature and L be the length of the solid, then the coefficient of linear expansion is

【数１】α＝１／Ｌ・（∂Ｌ／∂Ｔ）Ｐ で与えられる。また、本発明による線膨張係数の測定
は、例えば、熱機械的分析装置（ＴＭＡ）を用い、チャ
ック間距離１０ｍｍに幅３ｍｍに切断したフィルムを取
付け、引張荷重１０ｇ、昇温速度１０℃／分、測定温度
範囲２０〜２５０℃の条件で測定することができる。[Formula 1] α = 1 / L · (∂L / ∂T) P Further, the linear expansion coefficient according to the present invention is measured by, for example, using a thermomechanical analyzer (TMA), a film cut into a width of 3 mm with a chuck distance of 10 mm is attached, and a tensile load of 10 g and a heating rate of 10 ° C./min. The measurement temperature range can be measured in the range of 20 to 250 ° C.

【００１１】本発明の接着材のベースフィルムとして
は、例えば、ポリイミド、ポリエーテルスルフォン、ポ
リエーテルエーテルケトン、ポリエチレンテレフタレー
ト等の耐熱性フィルムで、３０℃〜１８０℃での線膨張
係数が２０ｐｐｍ／℃より小さい種類のフィルムを用い
ることができる。The base film of the adhesive of the present invention is, for example, a heat-resistant film of polyimide, polyether sulfone, polyether ether ketone, polyethylene terephthalate or the like, and has a linear expansion coefficient of 20 ppm / ° C. at 30 ° C. to 180 ° C. Smaller types of films can be used.

【００１２】本発明の半導体用接着フィルムは、例え
ば、耐熱性フィルムをベースフィルムとして、その上に
接着剤のワニスを塗布し、加熱乾燥し、溶剤を除去して
接着フィルムを得ることができる。このとき、加熱乾燥
条件としては、使用する接着剤成分、ワニスの溶媒等に
よって異なるが、一般に、７０〜２００℃、３〜３０分
である。The adhesive film for a semiconductor of the present invention can be obtained, for example, by using a heat-resistant film as a base film, applying a varnish of an adhesive on the base film, heating and drying, and removing the solvent. At this time, the heating and drying conditions are generally 70 to 200 ° C. and 3 to 30 minutes, although they vary depending on the adhesive component used, the solvent of the varnish and the like.

【００１３】また、ベースフィルムは剥がして使用する
ため、フィルムの表面に例えばシリコーン等で離型処理
することが好ましい。Further, since the base film is peeled off for use, it is preferable to subject the surface of the film to a release treatment with, for example, silicone.

【００１４】接着剤の塗布方法は特に限定するものでは
ないが、例えば、ロールコート、リバースロールコー
ト、グラビアコート、リップコート、バーコート等が挙
げられる。The method of applying the adhesive is not particularly limited, and examples thereof include roll coating, reverse roll coating, gravure coating, lip coating and bar coating.

【００１５】本発明の半導体用接着フィルムに使用する
接着剤としては、半導体素子を半導体搭載用基板に固定
することのできる接着力を有していれば、特に成分に制
限はなく、例えば、ポリイミド、ポリアミド、ポリアミ
ドイミド等の熱可塑性接着剤、エポキシ、ビスマレイミ
ド等の熱硬化性樹脂、またそれらを含有する接着剤及び
その混合物を使用することができる。これらの接着剤
は、半導体素子に負荷を与えず、作業性に優れる点で、
接着可能な温度が１８０℃以下であることが好ましく、
１４０℃以下であることがより好ましい。The adhesive used in the adhesive film for a semiconductor of the present invention is not particularly limited in its components as long as it has an adhesive force capable of fixing a semiconductor element to a semiconductor mounting substrate. , Thermoplastic adhesives such as polyamide and polyamide-imide, thermosetting resins such as epoxy and bismaleimide, and adhesives containing them and mixtures thereof can be used. These adhesives do not load the semiconductor element and are excellent in workability,
The temperature at which adhesion is possible is preferably 180 ° C or lower,
It is more preferably 140 ° C or lower.

【００１６】本発明の接着剤として好ましくは（１）エ
ポキシ樹脂及びその硬化剤１００重量部（２）グリシジ
ル（メタ）アクリレート２〜６重量％を含むＴｇ（ガラ
ス転移温度）が−１０℃以上でかつ重量平均分子量が８
０万以上であるエポキシ基含有アクリル系共重合体１０
０〜３００重量部（３）硬化促進剤０．１〜１０重量部
（４）カップリング剤０〜１０重量部を含有する接着剤
である事が好ましい。この接着剤成分を使用することに
より、貼り付け時に反りを生じないだけでなく、半導体
装置（半導体パッケージ）の信頼性、耐熱性が優れたも
のとなる。The adhesive of the present invention is preferably (1) epoxy resin and 100 parts by weight of its curing agent (2) containing 2 to 6% by weight of glycidyl (meth) acrylate and having a Tg (glass transition temperature) of -10 ° C or higher. And the weight average molecular weight is 8
Epoxy group-containing acrylic copolymer having a number of at least 100,000
It is preferable that the adhesive contains 0 to 300 parts by weight (3) curing accelerator 0.1 to 10 parts by weight (4) coupling agent 0 to 10 parts by weight. By using this adhesive component, not only warpage does not occur at the time of attachment, but also the reliability and heat resistance of the semiconductor device (semiconductor package) become excellent.

【００１７】本発明で使用するエポキシ樹脂及びその硬
化剤のエポキシ樹脂は、硬化して接着作用を呈するもの
であれば良く、２官能以上で、好ましくは分子量が５０
００未満、より好ましくは分子量３０００未満のエポキ
シ樹脂を用いるのが好ましい。The epoxy resin used in the present invention and the epoxy resin of its curing agent may be any resin that cures and exhibits an adhesive action, and is bifunctional or more and preferably has a molecular weight of 50.
It is preferable to use an epoxy resin having a molecular weight of less than 00, more preferably less than 3000.

【００１８】二官能エポキシ樹脂としてはビスフェノー
ルＡ型又はビスフェノールＦ型樹脂等が例示される。ビ
スフェノールＡ型又はビスフェノールＦ型液状樹脂は、
東都化成株式会社から、ＹＤ８１２５、ＹＤＦ１７０と
いう商品名で市販されている。Examples of the bifunctional epoxy resin include bisphenol A type resins and bisphenol F type resins. The bisphenol A type or bisphenol F type liquid resin is
It is marketed by Toto Kasei Co., Ltd. under the trade names of YD8125 and YDF170.

【００１９】エポキシ樹脂としては、高Ｔｇ化を目的に
多官能エポキシ樹脂を加えてもよく、多官能エポキシ樹
脂としては、フェノールノボラック型エポキシ樹脂、ク
レゾールノボラック型エポキシ樹脂等が例示される。フ
ェノールノボラック型エポキシ樹脂は、日本化薬株式会
社から、ＥＰＰＮ−２０１という商品名で市販されてい
る。また、クレゾールノボラック型エポキシ樹脂は、住
友化学工業株式会社から、ＥＳＣＮ−００１、ＥＳＣＮ
−１９５という商品名で、また、前記日本化薬株式会社
から、ＥＯＣＮ１０１２、ＥＯＣＮ１０２５、ＥＯＣＮ
１０２７という商品名で市販されている。さらに、東都
化成株式会社からＹＤＣＮ−７０３という商品名で市販
されている。二官能エポキシ樹脂と多官能エポキシ樹脂
の配合比は、好ましくは二官能エポキシの配合比を７０
％以上、より好ましくは９０％以上にすることが好まし
い。As the epoxy resin, a polyfunctional epoxy resin may be added for the purpose of increasing Tg, and examples of the polyfunctional epoxy resin include phenol novolac type epoxy resin and cresol novolac type epoxy resin. The phenol novolac type epoxy resin is commercially available from Nippon Kayaku Co., Ltd. under the trade name of EPPN-201. Further, cresol novolac type epoxy resin is available from Sumitomo Chemical Co., Ltd. in ESCN-001, ESCN.
With the trade name of -195, and from Nippon Kayaku Co., Ltd., EOCN1012, EOCN1025, EOCN
It is commercially available under the trade name of 1027. Furthermore, it is marketed by Toto Kasei Co., Ltd. under the trade name of YDCN-703. The compounding ratio of the bifunctional epoxy resin and the polyfunctional epoxy resin is preferably 70%.
% Or more, more preferably 90% or more.

【００２０】エポキシ樹脂の硬化剤は、エポキシ樹脂の
硬化剤として通常用いられているものを使用でき、アミ
ン、ポリアミド、酸無水物、ポリスルフィッド、三弗化
硼素及びフェノール性水酸基を１分子中に２個以上有す
る化合物であるビスフェノールＡ、ビスフェノールＦ、
ビスフェノールＳ等が挙げられる。特に吸湿時の耐電食
性に優れるためフェノールノボラック樹脂、ビスフェノ
ールノボラック樹脂又はクレゾールノボラック樹脂を用
いるのが好ましい。As the curing agent for the epoxy resin, those usually used as a curing agent for the epoxy resin can be used, and amine, polyamide, acid anhydride, polysulfide, boron trifluoride and phenolic hydroxyl group are contained in 2 molecules in one molecule. Bisphenol A, bisphenol F, which is a compound having one or more
Examples include bisphenol S and the like. In particular, it is preferable to use a phenol novolac resin, a bisphenol novolac resin, or a cresol novolac resin because of its excellent resistance to electrolytic corrosion when absorbing moisture.

【００２１】このような特に好ましいとした硬化剤は、
大日本インキ化学工業株式会社から、フェノライトＬＦ
２８８２、フェノライトＬＦ２８２２、フェノライトＴ
Ｄ−２０９０、フェノライトＴＤ−２１４９、フェノラ
イトＶＨ４１５０、フェノライトＶＨ４１７０という商
品名で市販されている。Such a particularly preferred curing agent is
Phenolite LF from Dainippon Ink and Chemicals, Inc.
2882, Phenolite LF2822, Phenolite T
D-2090, Phenolite TD-2149, Phenolite VH4150, and Phenolite VH4170 are commercially available under the trade names.

【００２２】エポキシ樹脂と硬化剤の合計は接着性の発
現から合計１００重量部であることが好ましく、特にエ
ポキシ樹脂２５〜７５重量部、硬化剤７５〜２５重量部
の比率が接着剤の濡れ性と高い接着性を確保できる。The total amount of the epoxy resin and the curing agent is preferably 100 parts by weight in view of the adhesiveness. In particular, the ratio of the epoxy resin 25 to 75 parts by weight and the curing agent 75 to 25 parts by weight is the wettability of the adhesive. And high adhesion can be secured.

【００２３】硬化剤とともに硬化促進剤を用いるのが好
ましく、硬化促進剤としては、各種イミダゾール類を用
いるのが好ましい。イミダゾールとしては、２−メチル
イミダゾール、２−エチル−４−メチルイミダゾール、
１−シアノエチル−２−フェニルイミダゾール、１−シ
アノエチル−２−フェニルイミダゾリウムトリメリテー
ト等が挙げられる。It is preferable to use a curing accelerator together with the curing agent, and it is preferable to use various imidazoles as the curing accelerator. As the imidazole, 2-methylimidazole, 2-ethyl-4-methylimidazole,
1-Cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate and the like can be mentioned.

【００２４】イミダゾール類は、四国化成工業株式会社
から、２Ｅ４ＭＺ、２ＰＺ−ＣＮ、２ＰＺ−ＣＮＳとい
う商品名で市販されている。硬化促進剤は接着剤の硬化
を必要以上に進ませず、長期安定性を確保する観点から
０．１〜１０重量部の範囲で添加することが好ましい。Imidazoles are commercially available from Shikoku Chemicals Co., Ltd. under the trade names of 2E4MZ, 2PZ-CN and 2PZ-CNS. The curing accelerator is preferably added in the range of 0.1 to 10 parts by weight from the viewpoint of preventing the adhesive from curing more than necessary and ensuring long-term stability.

【００２５】グリシジル（メタ）アクリレート２〜６重
量％を含むＴｇが−１０℃以上でかつ重量平均分子量が
８０００００以上であるエポキシ基含有アクリル系共重
合体は、帝国化学産業株式会社から市販されている商品
名ＨＴＲ−８６０Ｐ−３を使用することができる。官能
基モノマーが、カルボン酸タイプのアクリル酸や、水酸
基タイプのヒドロキシメチル（メタ）アクリレートを用
いると、架橋反応が進行しやすく、ワニス状態でのゲル
化、Ｂステージ状態での硬化度の上昇による接着力の低
下等の問題があるため好ましくない。また、官能基モノ
マーとして用いるグリシジル（メタ）アクリレートの量
は、２〜６重量％の共重合体比とする。接着力を得るた
め、２重量％以上とし、ゴムのゲル化を防止するために
６重量％以下とされる。残部はエチル（メタ）アクリレ
ートやブチル（メタ）アクリレート又は両者の混合物を
用いることができるが、混合比率は、共重合体のＴｇを
考慮して決定する。Ｔｇが−１０℃未満であるとＢステ
ージ状態での接着フィルムのタック性が大きくなり取扱
性が悪化するので、−１０℃以上とされる。重合方法は
パール重合、溶液重合等が挙げられ、これらにより得る
ことができる。An epoxy group-containing acrylic copolymer having a Tg of 2 to 6% by weight of glycidyl (meth) acrylate of -10 ° C or higher and a weight average molecular weight of 800,000 or higher is commercially available from Teikoku Chemical Industry Co., Ltd. The commercial product name HTR-860P-3 can be used. When the functional group monomer is carboxylic acid type acrylic acid or hydroxyl group type hydroxymethyl (meth) acrylate, the crosslinking reaction is likely to proceed, resulting in gelation in the varnish state and increase in the curing degree in the B stage state. There is a problem such as a decrease in adhesive strength, which is not preferable. The amount of glycidyl (meth) acrylate used as the functional group monomer is a copolymer ratio of 2 to 6% by weight. In order to obtain an adhesive force, it is 2% by weight or more, and in order to prevent gelation of rubber, it is 6% by weight or less. The balance may be ethyl (meth) acrylate, butyl (meth) acrylate, or a mixture of both, and the mixing ratio is determined in consideration of the Tg of the copolymer. If the Tg is less than -10 ° C, the tackiness of the adhesive film in the B-stage state becomes large and the handleability deteriorates. Examples of the polymerization method include pearl polymerization and solution polymerization, which can be obtained.

【００２６】エポキシ基含有アクリル系共重合体の重量
平均分子量は、８０００００以上とされ、この範囲で
は、シート状、フィルム状での強度や可撓性の低下やタ
ック性の増大が少ないからである。The weight average molecular weight of the epoxy group-containing acrylic copolymer is set to 800,000 or more, and in this range, the strength and flexibility of the sheet or film are not significantly reduced and the tackiness is not increased. .

【００２７】前記エポキシ基含有アクリル系共重合体添
加量は、フィルムの強度の低下やタック性が大きくなる
のを防止するため１００重量部で好ましくはエポキシ樹
脂が２５〜７５重量部で硬化剤が７５〜２５重量部であ
り、エポキシ基含有アクリルゴムの添加量が増えると、
ゴム成分の相が多くなり、エポキシ樹脂相が少なくなる
ため、高温での取扱い性の低下が起こるため、３００重
量部以下とされる。The epoxy group-containing acrylic copolymer is added in an amount of 100 parts by weight, preferably 25 to 75 parts by weight of an epoxy resin, in order to prevent a decrease in the strength of the film and an increase in tackiness. 75 to 25 parts by weight, and when the addition amount of the epoxy group-containing acrylic rubber increases,
Since the rubber component phase is increased and the epoxy resin phase is decreased, the handling property at high temperature is deteriorated, so that the content is 300 parts by weight or less.

【００２８】カップリング剤としては、シランカップリ
ング剤が好ましい。シランカップリング剤としては、γ
−グリシドキシプロピルトリメトキシシラン、γ−メル
カプトプロピルトリメトキシシラン、γ−アミノプロピ
ルトリエトキシシラン、γ−ウレイドプロピルトリエト
キシシラン、Ｎ−β−アミノエチル−γ−アミノプロピ
ルトリメトキシシラン等が挙げられる。前記したシラン
カップリング剤は、γ−グリシドキシプロピルトリメト
キシシランがＮＣＵ Ａ−１８７、γ−メルカプトプロ
ピルトリメトキシシランがＮＣＵ Ａ−１８９、γ−ア
ミノプロピルトリエトキシシランがＮＣＵ Ａ−１１０
０、γ−ウレイドプロピルトリエトキシシランがＮＣＵ
Ａ−１１６０、Ｎ−β−アミノエチル−γ−アミノプ
ロピルトリメトキシシランがＮＣＵ Ａ−１１２０とい
う商品名で、いずれも日本ユニカー株式会社から市販さ
れており、好適に使用することができる。カップリング
剤の配合量は、添加による効果や耐熱性及びコストか
ら、樹脂１００重量部に対し１〜１０重量部を添加する
のが好ましい。また、接着剤の配合によってはカップリ
ング剤を配合しなくても構わない。As the coupling agent, a silane coupling agent is preferable. As the silane coupling agent, γ
-Glycidoxypropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-ureidopropyltriethoxysilane, N-β-aminoethyl-γ-aminopropyltrimethoxysilane and the like. To be The above-mentioned silane coupling agent includes NCU A-187 for γ-glycidoxypropyltrimethoxysilane, NCU A-189 for γ-mercaptopropyltrimethoxysilane, and NCU A-110 for γ-aminopropyltriethoxysilane.
0, γ-ureidopropyltriethoxysilane is NCU
A-1160 and N-β-aminoethyl-γ-aminopropyltrimethoxysilane are commercially available from Nippon Unicar Co., Ltd. under the trade name of NCU A-1120 and can be preferably used. From the effects of addition, heat resistance and cost, it is preferable to add 1 to 10 parts by weight of the coupling agent to 100 parts by weight of the resin. Further, depending on the blending of the adhesive, the coupling agent may not be blended.

【００２９】本発明によるエポキシ基含有アクリル系共
重合体のＴｇ（ガラス転移温度）の測定は、Ｍａｃ Ｓ
ｃｉｅｎｃｅ製４０００型ＴＭＡを用い、チャック間距
離１５ｍｍに幅４ｍｍ、厚さ１５０μｍに切断した、１
７０℃／１時間硬化したフィルムを取付け、引張荷重５
ｇ、昇温速度１０℃／分、測定温度範囲３０〜２５０℃
の条件で熱変位量を測定した。The Tg (glass transition temperature) of the epoxy group-containing acrylic copolymer according to the present invention is measured by Mac S
Using a 4000 model TMA manufactured by Science, a chuck distance of 15 mm was cut into a width of 4 mm and a thickness of 150 μm.
Attach a cured film at 70 ° C for 1 hour, and pull load 5
g, temperature rising rate 10 ° C / min, measurement temperature range 30 to 250 ° C
The amount of thermal displacement was measured under the conditions.

【００３０】本発明による接着フィルムの接着剤層は、
ＤＳＣ（示差走査熱量測定）を用いて測定した全硬化発
熱量の１０〜４０％の発熱を終えた状態とすることが好
ましい。The adhesive layer of the adhesive film according to the present invention comprises:
It is preferable that the heat generation of 10 to 40% of the total heat generation amount of curing measured by DSC (differential scanning calorimetry) is finished.

【００３１】溶剤を除去する際に加熱するが、この時、
接着剤の組成物の硬化反応が進んでゲル化してくる。そ
の際の硬化状態が接着剤の流動性に影響し、接着性や取
り扱い性を適性化する。ＤＳＣ（示差走査熱量測定）
は、測定温度範囲内で、発熱、吸熱のない標準試料との
温度差をたえず打ち消すように熱量を供給、又は除去す
るゼロ位法を測定原理とするものであり、測定装置が市
販されており、それを用いて測定できる。Heating is carried out when removing the solvent. At this time,
The curing reaction of the adhesive composition progresses and gels. The cured state at that time affects the fluidity of the adhesive, and optimizes the adhesiveness and handleability. DSC (differential scanning calorimetry)
The principle of measurement is the zero-position method, in which the amount of heat is supplied or removed so as to cancel out the temperature difference from the standard sample with no heat generation or heat absorption within the measurement temperature range, and the measurement device is commercially available. , Can be measured using it.

【００３２】接着剤の樹脂組成物の反応は、発熱反応で
あり、一定の昇温速度で試料を加熱していくと、試料が
反応し熱量が発生する。その発熱量をチャートに出力
し、ベースラインを基準として発熱曲線とベースライン
で囲まれた面積を求め、これを発熱量とする。室温から
２５０℃まで１０℃／分の昇温速度で測定し、上記の発
熱量を求める。The reaction of the resin composition of the adhesive is an exothermic reaction, and when the sample is heated at a constant temperature rising rate, the sample reacts to generate heat. The amount of heat generated is output to a chart, the heat generation curve and the area surrounded by the baseline are obtained with the baseline as the reference, and this is taken as the amount of heat generated. The heating value is measured from room temperature to 250 ° C. at a temperature rising rate of 10 ° C./min, and the calorific value is obtained.

【００３３】次に、上記基材に塗布し、乾燥して得た接
着剤の発熱量は次のようにして求める。まず、２５℃で
真空乾燥器を用いて溶剤を乾燥させた未硬化試料の全発
熱量を測定し、これをＡ（Ｊ／ｇ）とする。次に塗工、
乾燥した試料の発熱量Ｂを測定し、試料の硬化度Ｃ
（％）（加熱、乾燥により発熱を終えた状態）は、次の
式Ｃ（％）＝（Ａ−Ｂ）×１００／Ａで与えられる。Next, the calorific value of the adhesive obtained by coating and drying the above-mentioned base material is obtained as follows. First, the total calorific value of the uncured sample obtained by drying the solvent at 25 ° C. using a vacuum dryer is measured, and this is designated as A (J / g). Next coating,
The calorific value B of the dried sample is measured, and the curing degree C of the sample
(%) (State in which heat generation is finished by heating and drying) is given by the following formula C (%) = (A−B) × 100 / A.

【００３４】本発明の、接着フィルムを備えた半導体搭
載用配線基板に用いる基板は、セラミックや有機基板と
いった基板材質にとらわれることなく用いることができ
る。配線の形状としては、片面、両面、多層配線のいず
れの構造でもよく、必要に応じて電気的に接続された貫
通孔、非貫通孔を設けてもよい。The substrate used for the semiconductor-mounting wiring substrate provided with the adhesive film of the present invention can be used regardless of the substrate material such as ceramic or organic substrate. The wiring may have a single-sided structure, a double-sided structure, or a multi-layered structure, and may have a through hole or a non-through hole electrically connected thereto, if necessary.

【００３５】さらに配線が半導体装置の外部表面に現れ
る場合には、保護樹脂層を設けることが好ましい。また
接着フィルムの基板への貼付方法についてはパッケージ
形状に応じた所定形状に切断した接着フィルムを配線基
板上の所望位置へ熱圧着する方法、又は接着フィルムを
配線基盤上に長尺のままラミネートする方法が一般的で
はあるが、これに限定されるものではない。Further, when the wiring appears on the outer surface of the semiconductor device, it is preferable to provide a protective resin layer. Regarding the method of attaching the adhesive film to the substrate, the adhesive film cut into a predetermined shape according to the package shape is thermocompression-bonded to a desired position on the wiring board, or the adhesive film is laminated on the wiring board in a long state. The method is general, but not limited to this.

【００３６】本発明の半導体用接着フィルムと配線基
板、シリコンウエハ、ＴＡＢテープ等を接着させたもの
はそりの発生が抑えられるため、ダイシング、打ち抜き
位置等の精度に優れる。The adhesive film for a semiconductor of the present invention bonded to a wiring board, a silicon wafer, a TAB tape, or the like suppresses warpage, and is therefore excellent in accuracy of dicing, punching position and the like.

【００３７】[0037]

【実施例】以下、実施例により本発明をさらに具体的に
説明する。EXAMPLES The present invention will be described in more detail below with reference to examples.

【００３８】（実施例１）ベースフィルムとして離型処
理を行った５０μｍ厚みのポリイミドフィルム（宇部興
産製のユーピレックス５０Ｓ）を使用し、その上に接着
剤としてＤＦ−４００（日立化成製）を４０μｍ厚みで
塗工してベースフィルム付き接着フィルム１を得た。ベ
ースフィルムの３０〜１８０℃での線膨張係数を熱機械
的分析装置（セイコー電子工業（株）のＳＳＣ５２００
Ｈ）で測定したところ、線膨張係数は９ｐｐｍ／℃であ
った。(Example 1) As a base film, a 50 μm-thick polyimide film (Upilex 50S manufactured by Ube Industries, Ltd.) subjected to a mold release treatment was used, and 40 μm of DF-400 (manufactured by Hitachi Chemical Co., Ltd.) was used as an adhesive agent on the polyimide film. Coating was performed with a thickness to obtain an adhesive film 1 with a base film. The linear expansion coefficient of the base film at 30 to 180 ° C. was measured by a thermomechanical analyzer (SSC5200 manufactured by Seiko Instruments Inc.).
When measured by H), the coefficient of linear expansion was 9 ppm / ° C.

【００３９】（実施例２）ベースフィルムとして離型処
理を行った７５μｍ厚みのポリエチレンテレフタレート
フィルム（（株）東レ製、ルミラーＳ）を使用し、その
上に実施例１と同じ接着剤を４０μｍ厚みで塗工してベ
ースフィルム付き接着フィルム２を得た。ベースフィル
ムの３０〜１８０℃での線膨張係数を実施例１と同じ条
件で測定したところ、１５ｐｐｍ／℃であった。Example 2 A polyethylene terephthalate film having a thickness of 75 μm (Lumirror S manufactured by Toray Industries, Inc.) subjected to a mold release treatment was used as a base film, and the same adhesive as in Example 1 was applied to the film having a thickness of 40 μm. Was applied to obtain an adhesive film 2 with a base film. When the linear expansion coefficient of the base film at 30 to 180 ° C. was measured under the same conditions as in Example 1, it was 15 ppm / ° C.

【００４０】（実施例３）エポキシ樹脂としてビスフェ
ノールＡ型エポキシ樹脂（エポキシ当量１７５、東都化
成株式会社製のＹＤ−８１２５を使用）６０重量部、フ
ェノールノボラック型のエポキシ樹脂（東都化成株式会
社製のＹＤＣＮ−７０３を使用）５重量部、硬化剤とし
てビスフエノールＡノボラック樹脂（大日本インキ製の
ＬＦ−２８８２を使用）３５重量部、溶剤としてシクロ
ヘキサノン３０重量部を攪拌混合したワニスに、エポキ
シ基含有アクリル系共重合体としてエポキシ基含有アク
リルゴム（分子量１００万、帝国化学産業株式会社製の
ＨＴＲ−８６０Ｐ−３）２３０重量部、硬化促進剤とし
て１−シアノエチル−２−フェニルイミダゾール（キュ
アゾール２ＰＺ−ＣＮを使用）０．５重量部、カップリ
ング剤としてγ−グリシドキシプロピルトリメトキシシ
ラン（日本ユニカー株式会社製のＮＵＣ Ａ−１８９を
使用）２．５重量部とγ−ウレイドプロピルトリエトキ
シシラン（日本ユニカー株式会社製のＮＣＵ Ａ−１１
６０を使用）２．５重量部からなる低弾性接着剤成分に
溶剤としてシクロヘキサノンを１７００重量部加えて攪
拌混合し、この接着剤の組成物ワニス１を得た。このワ
ニスを実施例１と同じベースフィルム上に５０μｍ厚み
で塗工して、ベースフィルム付き接着フィルム３を得
た。なおこの状態での接着剤の硬化度は、ＤＳＣ（デュ
ポン社製９１２型ＤＳＣ）を用いて測定（昇温速度：１
０℃／分）した結果、全硬化発熱量の１４〜２０％の範
囲内の発熱を終えた状態であった。また、残存溶媒量
は、０．１〜０．５％の範囲内であった。Example 3 60 parts by weight of a bisphenol A type epoxy resin (epoxy equivalent: 175, YD-8125 manufactured by Tohto Kasei Co., Ltd.) was used as an epoxy resin, and a phenol novolac type epoxy resin (manufactured by Toto Kasei Co., Ltd.). 5 parts by weight of YDCN-703), 35 parts by weight of bisphenol A novolak resin (using LF-2882 made by Dainippon Ink & Co., Ltd.) as a curing agent, and 30 parts by weight of cyclohexanone as a solvent are mixed in a varnish with an epoxy group. Epoxy group-containing acrylic rubber (molecular weight 1,000,000, HTR-860P-3 manufactured by Teikoku Kagaku Sangyo Co., Ltd.) 230 parts by weight as an acrylic copolymer, 1-cyanoethyl-2-phenylimidazole (Curazole 2PZ-CN as a curing accelerator. 0.5 part by weight, γ-as a coupling agent Licid trimethoxysilane (Nippon Unicar using NUC A-189 Co., Ltd.) 2.5 parts by weight of γ- ureidopropyltriethoxysilane (manufactured by Nippon Unicar Co. NCU A-11
60 parts were used) 1700 parts by weight of cyclohexanone as a solvent was added to 2.5 parts by weight of the low-elasticity adhesive component and mixed by stirring to obtain a composition varnish 1 of this adhesive. This varnish was applied on the same base film as in Example 1 to a thickness of 50 μm to obtain an adhesive film 3 with a base film. The degree of cure of the adhesive in this state was measured by using DSC (DuPont 912 type DSC) (heating rate: 1
(0 ° C./min), the result was that the heat generation within the range of 14 to 20% of the total curing heat value was finished. The residual solvent amount was within the range of 0.1 to 0.5%.

【００４１】（実施例４）エポキシ樹脂としてビスフェ
ノールＡ型エポキシ樹脂（エポキシ当量１７５、東都化
成株式会社製のＹＤ−８１２５を使用）５０重量部、フ
ェノールノボラック型のエポキシ樹脂（東都化成株式会
社製のＹＤＣＮ−７０３を使用）１５重量部、硬化剤と
してビスフエノールＡノボラック樹脂（大日本インキ製
のＬＦ−２８８２を使用）３０重量部、溶剤としてシク
ロヘキサノン３０重量部を攪拌混合したワニスに、フィ
ラーとして三酸化二アンチモン（日本精鉱製のＰＡＴＯ
Ｘ−Ｕを使用）４０重量部、カップリング剤としてγ−
グリシドキシプロピルトリメトキシシラン（日本ユニカ
ー株式会社製のＮＵＣ Ａ−１８９を使用）２．５重量
部、γ−ウレイドプロピルトリエトキシシラン（日本ユ
ニカー株式会社製のＮＣＵ Ａ−１１６０を使用）２．
５重量部を混合攪拌した後、ビーズミル処理を行い、エ
ポキシ基含有アクリル系共重合体としてエポキシ基含有
アクリルゴム（分子量１００万、帝国化学産業株式会社
製のＨＴＲ−８６０Ｐ−３を使用）２３０重量部、硬化
促進剤として１−シアノエチル−２−フェニルイミダゾ
ール（キュアゾール２ＰＺ−ＣＮを使用）０．５重量部
からなる接着剤成分に溶剤としてシクロヘキサノン１７
００重量部を加えて攪拌混合し、この接着剤の組成物ワ
ニス２を得た。ビーズミル処理後のの粒径は１〜５μｍ
であった。Example 4 50 parts by weight of a bisphenol A type epoxy resin (epoxy equivalent 175, YD-8125 manufactured by Tohto Kasei Co., Ltd.) was used as an epoxy resin, and a phenol novolac type epoxy resin (manufactured by Toto Kasei Co., Ltd.). 15 parts by weight of YDCN-703), 30 parts by weight of bisphenol A novolak resin (using LF-2882 manufactured by Dainippon Ink & Co., Ltd.) as a curing agent, and 30 parts by weight of cyclohexanone as a solvent are mixed in a varnish with stirring. Antimony oxide (PATO manufactured by Nihon concentrate)
X-U) 40 parts by weight, γ-as a coupling agent
2.5 parts by weight of glycidoxypropyltrimethoxysilane (using NUC A-189 manufactured by Nippon Unicar Co., Ltd.), γ-ureidopropyltriethoxysilane (using NCU A-1160 manufactured by Nippon Unicar Co., Ltd.) 2.
After mixing and stirring 5 parts by weight, a bead mill treatment was performed, and an epoxy group-containing acrylic rubber as an epoxy group-containing acrylic copolymer (molecular weight: 1,000,000, HTR-860P-3 manufactured by Teikoku Chemical Industry Co., Ltd. was used) 230 parts by weight Parts, 0.5 parts by weight of 1-cyanoethyl-2-phenylimidazole (using Cureazole 2PZ-CN) as a curing accelerator, and cyclohexanone 17 as a solvent.
00 parts by weight were added and mixed by stirring to obtain a composition varnish 2 of this adhesive. Particle size after bead milling is 1-5 μm
Met.

【００４２】このワニスを実施例１と同じベースフィル
ム上に５０μｍ厚みで塗工して、ベースフィルム付き接
着フィルム４を得た。なおこの状態での接着剤の硬化度
は、ＤＳＣ（デュポン社製９１２型ＤＳＣ）を用いて測
定（昇温速度：１０℃／分）した結果、全硬化発熱量の
１４〜２０％の範囲内の発熱を終えた状態であった。ま
た、残存溶媒量は、０．１〜０．５％の範囲内であっ
た。This varnish was coated on the same base film as in Example 1 to a thickness of 50 μm to obtain an adhesive film 4 with a base film. The degree of cure of the adhesive in this state was measured by using a DSC (912 type DSC manufactured by DuPont) (heating rate: 10 ° C./min), and as a result, it was within the range of 14 to 20% of the total curing heat value. It was in the state of having finished the fever. The residual solvent amount was within the range of 0.1 to 0.5%.

【００４３】（比較例１）ベースフィルムとして離型処
理を行った５０μｍ厚みのポリエーテルスルフォンフィ
ルム（住友ベークライト株式会社製のＦＳ−１３００）
を使用した以外は実施例１と同様にして、ベースフィル
ム付き接着フィルム５を作製した。ポリエーテルスルフ
ォンフィルムの３０〜１８０℃での線膨張係数を実施例
１と同じ条件で測定したところ、５０ｐｐｍ／℃であっ
た。(Comparative Example 1) A 50 μm thick polyethersulfone film (FS-1300 manufactured by Sumitomo Bakelite Co., Ltd.) having a release treatment as a base film.
An adhesive film 5 with a base film was produced in the same manner as in Example 1 except that was used. When the linear expansion coefficient of the polyether sulfone film at 30 to 180 ° C. was measured under the same conditions as in Example 1, it was 50 ppm / ° C.

【００４４】（比較例２）接着剤の硬化度を、ＤＳＣ
（デュポン社製９１２型ＤＳＣ）を用いて測定（昇温速
度：１０℃／分）した結果、全硬化発熱量の０〜５％の
範囲内の発熱を終えた状態とした以外は実施例３と同様
にして、ベースフィルム付き接着フィルム６を作製し
た。得られた接着フィルムを用いて、８インチウエハ
（２００μｍ厚み）、ＴＡＢテープ（４８ｍｍ幅）へ全
面貼り付けを行い、そりを評価した。(Comparative Example 2) The degree of curing of the adhesive was measured by DSC.
As a result of measurement (temperature rising rate: 10 ° C./min) using (DuPont 912 DSC), Example 3 was repeated except that the heat generation within the range of 0 to 5% of the total curing heat generation was terminated. An adhesive film 6 with a base film was produced in the same manner as in. Using the obtained adhesive film, the entire surface was attached to an 8-inch wafer (200 μm thickness) and a TAB tape (48 mm width), and warpage was evaluated.

【００４５】ウエハそりの評価は、ラミネーター（大成
ラミネーター（株）製 ＶＡ−４００ＩＩＩ）で、貼り
付け温度１２０℃、ニップ圧０．２ＭＰａ、速度０．５
ｍ／分の条件でウエハ全面に一括して貼り付けを行い、
貼り付け後に接着フィルムを上面にして基準面からのウ
エハの浮き上がり高さをそりとして測定した。測定は非
接触震度測定機（ユニオン光学（株）製ＤＨ５１０）を
用い、ウエハを半分に分けて、それぞれのそりの最も大
きい点を測定してその平均をそりの大きさとした。The wafer warpage was evaluated by using a laminator (VA-400III, manufactured by Taisei Laminator Co., Ltd.) at a sticking temperature of 120 ° C., a nip pressure of 0.2 MPa and a speed of 0.5.
Attached all over the wafer at once under the condition of m / min.
After the bonding, the height of the floating of the wafer from the reference surface was measured as the warpage with the adhesive film as the upper surface. For the measurement, a non-contact seismic intensity meter (DH510 manufactured by Union Optical Co., Ltd.) was used, the wafer was divided into halves, and the largest point of each warp was measured, and the average was taken as the size of the warp.

【００４６】ＴＡＢテープそり評価は、上記と同じラミ
ネーターで貼り付け温度１２０℃、ニップ圧０．２ＭＰ
ａ、速度０．５ｍ／分、巻き出し、巻き取りテンション
３Ｋｇの条件でＴＡＢテープの裏面に４０ｍｍ幅の接着
フィルムを貼り付け、貼り付け後にＴＡＢテープを２０
ｃｍ長さに切り、接着フィルムを下面にして基準面から
の浮き上がり高さを測定した。The TAB tape warpage was evaluated using the same laminator as above, but with a sticking temperature of 120 ° C. and a nip pressure of 0.2 MP.
a, a speed of 0.5 m / min, an unwinding and winding tension of 3 kg, and a 40 mm wide adhesive film was attached to the back surface of the TAB tape.
It was cut into cm lengths, and the height of floating from the reference surface was measured with the adhesive film as the lower surface.

【００４７】作業性はＴＡＢテープへの貼り付けを行っ
たときに接着剤がきちんと貼れているか、テープの左右
へのしみ出しが多くないかを観察した。問題がない場合
は○、問題がある場合は×と表示した。As for workability, it was observed whether the adhesive was properly applied when the tape was applied to the TAB tape, or whether the tape was exuded to the left and right. When there is no problem, it is indicated as ○, and when there is a problem, it is indicated as ×.

【００４８】[0048]

【表１】 [Table 1]

【００４９】比較例１においては、ベースフィルムの線
膨張係数が大きいことにより、大きなそりを生じてい
る。比較例２においては、そりは生じていないが接着剤
の硬化が不十分なためラミネート時にしみ出しが生じ
る、硬化時にボイドが発生する等作業性に不具合が生じ
ている。実施例１はベースフィルムに低線膨張係数のフ
ィルムを使用することにより、そりを低減することがで
きた。また実施例２では、ベースフィルムの種類、厚み
を変えても線膨張係数が低ければそりを抑制する結果が
得られた。実施例３においては、パッケージの信頼性が
良い低弾性の接着剤を使用しても、そりを抑制する効果
が得られた。実施例４においては、パッケージの信頼性
が良い低弾性の接着剤にフィラーを分散して接着剤の堅
さを調整しても、そりを抑制する効果が得られる事が分
かった。In Comparative Example 1, a large warpage occurs due to the large linear expansion coefficient of the base film. In Comparative Example 2, warping did not occur, but curing of the adhesive was insufficient, so that exudation occurred during lamination, voids occurred during curing, and other workability problems occurred. In Example 1, warpage could be reduced by using a film having a low linear expansion coefficient as the base film. In addition, in Example 2, even if the type and thickness of the base film were changed, the result of suppressing warpage was obtained if the linear expansion coefficient was low. In Example 3, even if a low elastic adhesive having good package reliability was used, the effect of suppressing warpage was obtained. In Example 4, it was found that the warpage can be suppressed even if the hardness of the adhesive is adjusted by dispersing the filler in the low-elasticity adhesive having good package reliability.

【００５０】[0050]

【発明の効果】本発明の低線膨張係数のベースフィルム
を有する半導体用接着フィルムは、ベースフィルムの３
０〜１８０℃での線膨張係数が低いために、半導体装置
において、貼り付けられた配線基板、シリコンウエハ、
ＴＡＢテープ等との熱膨張率差から生じるそりを緩和さ
せることができる。そのため、ダイシング、打ち抜き等
の加工精度に優れる。The adhesive film for semiconductors having a base film having a low linear expansion coefficient according to the present invention has a base film of 3%.
Due to the low linear expansion coefficient at 0 to 180 ° C., in a semiconductor device, a wiring substrate, a silicon wafer, and
It is possible to reduce warpage caused by a difference in coefficient of thermal expansion from that of a TAB tape or the like. Therefore, it is excellent in processing accuracy such as dicing and punching.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明による半導体用接着フィルムの断面図で
ある。FIG. 1 is a cross-sectional view of an adhesive film for a semiconductor according to the present invention.

【図２】本発明による半導体用接着フィルムを用いた半
導体装置の断面図である。FIG. 2 is a sectional view of a semiconductor device using the adhesive film for a semiconductor according to the present invention.

【符号の説明】[Explanation of symbols]

１ 接着剤 ２ 基材 ３ 保護フィルム ４ 配線 ５ 半導体配線基板 ６ 半導体チップ ７ 半導体チップ接続部材 ８ 封止材 ９ 半田ボール 1 adhesive 2 base materials 3 protective film 4 wiring 5 Semiconductor wiring board 6 semiconductor chips 7 Semiconductor chip connection member 8 Sealant 9 Solder balls

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 21/52 Ｈ０１Ｌ 21/52 Ｅ Ｆターム(参考） 4J004 AA02 AA10 AA13 AA17 AA18 CA06 CD02 FA05 FA08 4J036 AD08 AK11 DB05 DB15 DC02 DC40 DD09 FA03 FB07 FB08 FB13 FB15 JA06 JA08 4J040 DF061 EC061 EC071 EC232 HD30 JA09 KA16 KA17 KA42 LA02 NA20 PA23 5F047 BA21 BB03 BB19 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01L 21/52 H01L 21/52 EF term (reference) 4J004 AA02 AA10 AA13 AA17 AA18 CA06 CD02 FA05 FA08 4J036 AD08 AK11 DB05 DB15 DC02 DC40 DD09 FA03 FB07 FB08 FB13 FB15 JA06 JA08 4J040 DF061 EC061 EC071 EC232 HD30 JA09 KA16 KA17 KA42 LA02 NA20 PA23 5F047 BA21 BB03 BB19

Claims (8)

【特許請求の範囲】[Claims] 【請求項１】 半導体基板の半分以上の面積に一括して
貼り付けを行う貼り付け方法に使用されるベースフィル
ム付き半導体用接着フィルムであって、３０〜１８０℃
での線膨張係数が２０ｐｐｍ／℃以下であるベースフィ
ルムとその上に形成された接着剤層とを有してなる半導
体用接着フィルム。1. An adhesive film for a semiconductor with a base film, which is used in a sticking method for sticking to an area of more than half of a semiconductor substrate in a lump, at 30 to 180 ° C.
An adhesive film for semiconductors, comprising a base film having a linear expansion coefficient of 20 ppm / ° C. or less and an adhesive layer formed thereon. 【請求項２】 ベースフィルム上に形成される接着剤
が、１８０℃以下で被着体と接着することが可能な接着
剤である請求項１記載の半導体用接着フィルム。2. The adhesive film for a semiconductor according to claim 1, wherein the adhesive formed on the base film is an adhesive capable of adhering to an adherend at 180 ° C. or lower. 【請求項３】 ベースフィルム上に形成された接着剤
が、（１）エポキシ樹脂及びその硬化剤１００重量部、
（２）グリシジル（メタ）アクリレートを２〜６重量％
含み、Ｔｇ（ガラス転移温度）が−１０℃以上で、かつ
重量平均分子量が８０万以上であるエポキシ基含有アク
リル系共重合体５０〜３００重量部、（３）硬化促進剤
０．１〜１０重量部、（４）カップリング剤０〜１０重
量部を含有してなる接着剤である請求項１又は２記載の
半導体用接着フィルム。3. The adhesive formed on the base film comprises (1) 100 parts by weight of an epoxy resin and its curing agent,
(2) 2 to 6% by weight of glycidyl (meth) acrylate
50 to 300 parts by weight of an epoxy group-containing acrylic copolymer having a Tg (glass transition temperature) of -10 ° C or more and a weight average molecular weight of 800,000 or more, (3) a curing accelerator 0.1 to 10 The adhesive film for a semiconductor according to claim 1 or 2, which is an adhesive containing 0 to 10 parts by weight of (4) a coupling agent. 【請求項４】 ベースフィルム上に形成された接着剤
が、フィラー以外の成分１００体積部に対して無機フィ
ラーを２〜２０体積部含有してなる請求項１〜３のいず
れかに記載の半導体用接着フィルム。4. The semiconductor according to claim 1, wherein the adhesive formed on the base film contains 2 to 20 parts by volume of an inorganic filler with respect to 100 parts by volume of components other than the filler. Adhesive film. 【請求項５】 ベースフィルム上に形成された接着剤が
ＤＳＣ（示差走査熱量測定）を用いて測定した場合に全
硬化発熱量の１０〜４０％の発熱を終えた状態してなる
請求項１〜４のいずれかに記載の半導体用接着フィル
ム。5. The adhesive formed on the base film is in a state where heat generation of 10 to 40% of the total curing heat generation is finished when measured by DSC (differential scanning calorimetry). The adhesive film for a semiconductor according to any one of to 4. 【請求項６】 請求項１〜５のいずれかに記載の接着フ
ィルムを半導体搭載用基板上に備えた構造を有してなる
接着フィルム付き半導体搭載用基板。6. A semiconductor mounting substrate with an adhesive film, which has a structure in which the adhesive film according to claim 1 is provided on a semiconductor mounting substrate. 【請求項７】 半導体搭載用基板が、有機フィルム上に
配線を形成したＴＡＢテープである請求項６記載の接着
フィルム付き半導体搭載用基板。7. The semiconductor mounting substrate with an adhesive film according to claim 6, wherein the semiconductor mounting substrate is a TAB tape having wiring formed on an organic film. 【請求項８】 請求項１〜５のいずれかに記載の接着フ
ィルムを用いて、半導体素子と半導体搭載用基板とを接
着した構造を有してなる半導体装置。8. A semiconductor device having a structure in which a semiconductor element and a semiconductor mounting substrate are bonded to each other using the adhesive film according to claim 1.
JP2001281807A 2001-09-17 2001-09-17 Adhesive film for semiconductor and its application Pending JP2003082306A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001281807A JP2003082306A (en) 2001-09-17 2001-09-17 Adhesive film for semiconductor and its application

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001281807A JP2003082306A (en) 2001-09-17 2001-09-17 Adhesive film for semiconductor and its application

Publications (1)

Publication Number Publication Date
JP2003082306A true JP2003082306A (en) 2003-03-19

Family

ID=19105562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001281807A Pending JP2003082306A (en) 2001-09-17 2001-09-17 Adhesive film for semiconductor and its application

Country Status (1)

Country Link
JP (1) JP2003082306A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005154687A (en) * 2003-11-28 2005-06-16 Hitachi Chem Co Ltd Adhesive composition, adhesive member, supporting member for semiconductor mounting and semiconductor device
JP2005206717A (en) * 2004-01-23 2005-08-04 Hitachi Chem Co Ltd Substrate-provided adhesive, manufacturing method of substrate-provided adhesive, and circuit connecting structure using the adhesive
JP2011522065A (en) * 2008-04-25 2011-07-28 エルジー・ケム・リミテッド Epoxy composition, adhesive film, dicing die bonding film, and semiconductor device
JP2012046738A (en) * 2010-07-29 2012-03-08 Dainippon Printing Co Ltd Adhesive composition and method of manufacturing thermosetting adhesive sheet
WO2012165012A1 (en) * 2011-05-27 2012-12-06 味の素株式会社 Resin composition

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998015975A1 (en) * 1996-10-08 1998-04-16 Hitachi Chemical Company, Ltd. Semiconductor device, semiconductor chip mounting substrate, methods of manufacturing the device and substrate, adhesive, and adhesive double coated film
JPH10298509A (en) * 1997-04-22 1998-11-10 Ube Ind Ltd Tape for loc
JPH115954A (en) * 1997-06-17 1999-01-12 Ube Ind Ltd Tape with adhesive, metal-clad laminate, and circuit board
JPH1112545A (en) * 1997-06-25 1999-01-19 Hitachi Chem Co Ltd Bonding film for insulating layer
JPH1143657A (en) * 1997-07-29 1999-02-16 Ube Ind Ltd Film carrier tape and process for preparing same
JPH11209724A (en) * 1998-01-30 1999-08-03 Hitachi Chem Co Ltd Flame retarded adhesive, flame retarded bonding member, wiring board for loading semiconductor having flame retarded bonding member and semiconductor device using the same
JPH11284114A (en) * 1998-03-27 1999-10-15 Hitachi Chem Co Ltd Semiconductor device
JP2000154361A (en) * 1998-11-24 2000-06-06 Hitachi Chem Co Ltd Adhesive, adhesive member, wiring board equipped with the adhesive member for semiconductor, and semiconductor equipment
JP2000198969A (en) * 1999-01-07 2000-07-18 Ube Ind Ltd Adhesive-coated aromatic polyimide film, metal-clad laminate, and circuit board
JP2001220565A (en) * 1999-06-18 2001-08-14 Hitachi Chem Co Ltd Adhesive, adherend member, semiconductor-mounting printing. wiring board provided with adhrend member and semiconductor device using the same

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998015975A1 (en) * 1996-10-08 1998-04-16 Hitachi Chemical Company, Ltd. Semiconductor device, semiconductor chip mounting substrate, methods of manufacturing the device and substrate, adhesive, and adhesive double coated film
JPH10298509A (en) * 1997-04-22 1998-11-10 Ube Ind Ltd Tape for loc
JPH115954A (en) * 1997-06-17 1999-01-12 Ube Ind Ltd Tape with adhesive, metal-clad laminate, and circuit board
JPH1112545A (en) * 1997-06-25 1999-01-19 Hitachi Chem Co Ltd Bonding film for insulating layer
JPH1143657A (en) * 1997-07-29 1999-02-16 Ube Ind Ltd Film carrier tape and process for preparing same
JPH11209724A (en) * 1998-01-30 1999-08-03 Hitachi Chem Co Ltd Flame retarded adhesive, flame retarded bonding member, wiring board for loading semiconductor having flame retarded bonding member and semiconductor device using the same
JPH11284114A (en) * 1998-03-27 1999-10-15 Hitachi Chem Co Ltd Semiconductor device
JP2000154361A (en) * 1998-11-24 2000-06-06 Hitachi Chem Co Ltd Adhesive, adhesive member, wiring board equipped with the adhesive member for semiconductor, and semiconductor equipment
JP2000198969A (en) * 1999-01-07 2000-07-18 Ube Ind Ltd Adhesive-coated aromatic polyimide film, metal-clad laminate, and circuit board
JP2001220565A (en) * 1999-06-18 2001-08-14 Hitachi Chem Co Ltd Adhesive, adherend member, semiconductor-mounting printing. wiring board provided with adhrend member and semiconductor device using the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005154687A (en) * 2003-11-28 2005-06-16 Hitachi Chem Co Ltd Adhesive composition, adhesive member, supporting member for semiconductor mounting and semiconductor device
JP2005206717A (en) * 2004-01-23 2005-08-04 Hitachi Chem Co Ltd Substrate-provided adhesive, manufacturing method of substrate-provided adhesive, and circuit connecting structure using the adhesive
JP2011522065A (en) * 2008-04-25 2011-07-28 エルジー・ケム・リミテッド Epoxy composition, adhesive film, dicing die bonding film, and semiconductor device
US9659763B2 (en) 2008-04-25 2017-05-23 Lg Chem, Ltd. Epoxy-based composition, adhesive film, dicing die-bonding film and semiconductor device
US9793103B2 (en) 2008-04-25 2017-10-17 Lg Chem, Ltd. Epoxy-based composition, adhesive film, dicing die-bonding film and semiconductor device
JP2012046738A (en) * 2010-07-29 2012-03-08 Dainippon Printing Co Ltd Adhesive composition and method of manufacturing thermosetting adhesive sheet
WO2012165012A1 (en) * 2011-05-27 2012-12-06 味の素株式会社 Resin composition
JP5234229B1 (en) * 2011-05-27 2013-07-10 味の素株式会社 Resin composition
US8912279B2 (en) 2011-05-27 2014-12-16 Ajinomoto Co., Inc. Resin composition

Similar Documents

Publication Publication Date Title
KR100603484B1 (en) Semiconductor device, semiconductor chip mounting substrate, methods of manufacturing the device and substrate, adhesive, and adhesive double coated film
EP2136393A1 (en) Adhesive film for semiconductor and semiconductor device made with the same
JP4466397B2 (en) Adhesive film for semiconductor and semiconductor device using the same
JP2006269887A (en) Adhesive film for semiconductor, and semiconductor device using this
KR100845092B1 (en) Adhesive composition for a semiconductor packing, adhesive film, dicing die bonding film and semiconductor device using the same
JP2004221169A (en) Semiconductor element protecting material and semiconductor device
JP5005324B2 (en) Adhesive composition, adhesive sheet and method for producing semiconductor device
JP2002060716A (en) Low-elastic adhesive, low-elastic adhesive member, substrate for loading semiconductor having low-elastic adhesive member and semiconductor device using the same
JP4893640B2 (en) Adhesive film for semiconductor and semiconductor device using the same
JP3528639B2 (en) Adhesive, adhesive member, wiring board for mounting semiconductor provided with adhesive member, and semiconductor device using the same
JP5005325B2 (en) Adhesive composition, adhesive sheet and method for producing semiconductor device
JP2007284670A (en) Adhesive film and semiconductor device by using the same
JP5754072B2 (en) Adhesive composition, adhesive member sheet for connecting circuit members, and method for manufacturing semiconductor device
JP2002134531A (en) Semiconductor device, substrate for mounting semiconductor chip and manufacturing method therefor, and adhesive and double-sided adhesive film
JP2001302998A (en) Adhesive film and its application
JPH11209724A (en) Flame retarded adhesive, flame retarded bonding member, wiring board for loading semiconductor having flame retarded bonding member and semiconductor device using the same
JP4534100B2 (en) Double-sided adhesive film for electronic parts, organic substrate for semiconductor mounting, and semiconductor device
JP2003060127A (en) Semiconductor device, substrate for mounting semiconductor chip, manufacturing method for them, adhesive agent and double-sided adhesive film
JP5564782B2 (en) Adhesive composition, film adhesive, adhesive sheet and semiconductor device
JP2008004751A (en) Semiconductor device manufacturing method
JP2003096426A (en) Adhesive member
JP2003082306A (en) Adhesive film for semiconductor and its application
JP2010258086A (en) Adhesive sheet for semiconductor, and dicing tape integrated type adhesive sheet for semiconductor
JP2000106372A (en) Both-sided adhesive film, organic board for mounting semiconductor and semiconductor device
JP2000154360A (en) Adhesive, adhesive member, wiring board equipped with the adhesive member for semiconductor, and semiconductor equipment

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080829

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110526

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110602

A02 Decision of refusal

Effective date: 20111006

Free format text: JAPANESE INTERMEDIATE CODE: A02