JP2003078168A - Nitride semiconductor light emitting element - Google Patents
Nitride semiconductor light emitting elementInfo
- Publication number
- JP2003078168A JP2003078168A JP2001263361A JP2001263361A JP2003078168A JP 2003078168 A JP2003078168 A JP 2003078168A JP 2001263361 A JP2001263361 A JP 2001263361A JP 2001263361 A JP2001263361 A JP 2001263361A JP 2003078168 A JP2003078168 A JP 2003078168A
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- Prior art keywords
- nitride semiconductor
- light emitting
- layer
- electrode
- type
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は青色領域から紫外光
領域で発光可能な窒化物半導体発光素子に関し、特に窒
化物半導体発光素子におけるクラックの発生を防止し得
る電極構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride semiconductor light emitting device capable of emitting light in a blue region to an ultraviolet light region, and more particularly to an electrode structure capable of preventing the occurrence of cracks in the nitride semiconductor light emitting device.
【０００２】[0002]
【従来の技術】従来から、窒化物半導体発光素子は青色
発光素子として利用できることが知られており、近年で
は青色の発光ダイオードや青紫色の半導体レーザなどが
研究されている。かかる窒化物半導体発光素子の構造と
しては、特開平１１−１７７１４２号公報においてＧａ
Ｎ系の半導体層等の積層体にｐ型パッド電極を直接形成
したものが開示されている。この構造を図５に示す。2. Description of the Related Art Conventionally, it has been known that a nitride semiconductor light emitting device can be used as a blue light emitting device, and in recent years, blue light emitting diodes and blue-violet semiconductor lasers have been studied. The structure of such a nitride semiconductor light emitting device is described in Japanese Patent Application Laid-Open No. 11-177142, Ga.
It is disclosed that a p-type pad electrode is directly formed on a laminated body such as an N-based semiconductor layer. This structure is shown in FIG.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら特開平１
１−１７７１４２号公報に開示されたように、窒化物半
導体層に直接パッド電極を形成する手法をとった場合に
は、パッド電極を形成する際に発光素子に発生する応力
のために発光素子にクラックが生じることがある。ま
た、発光素子に発光素子外部から電流を供給するために
はパッド電極に金属製のワイヤを接合する加工等をする
必要があるが、この加工をする際にも発光素子に応力が
発生するため、発光素子にクラックが生じ得る。したが
って、クラックが発生した発光素子に外部から電流を供
給した場合には、発光素子においてクラックを介して電
流が流れるため、電気的に短絡してしまい、発光素子が
発光しないという問題があった。[Patent Document 1] Japanese Unexamined Patent Application Publication No.
As disclosed in Japanese Patent Laid-Open No. 1-177142, when the method of directly forming the pad electrode on the nitride semiconductor layer is adopted, the light emitting element may be damaged due to the stress generated in the light emitting element when the pad electrode is formed. Cracks may occur. Further, in order to supply a current to the light emitting element from the outside of the light emitting element, it is necessary to perform processing such as bonding a metal wire to the pad electrode, but stress is also generated in the light emitting element during this processing. The light emitting element may be cracked. Therefore, when a current is supplied from the outside to the light emitting element in which a crack has occurred, a current flows through the crack in the light emitting element, resulting in an electrical short circuit, and there is a problem that the light emitting element does not emit light.
【０００４】そこで、本発明では窒化物半導体発光素子
において、パッド電極の形成またはワイヤの接合等の際
に発光素子に生じるクラックの発生および発光素子の短
絡を防止し、ひいては発光素子の信頼性向上を可能にす
ることを目的とする。Therefore, in the present invention, in the nitride semiconductor light emitting device, the generation of cracks and the short circuit of the light emitting device which occur when the pad electrode is formed or the wire is joined is prevented, and the reliability of the light emitting device is improved. The purpose is to enable.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するた
め、本発明は、発光層を含む複数の窒化物半導体層から
成る窒化物半導体積層構造体と、この積層構造体上に窒
化物半導体層とシリコン層を含む台座電極とを含み、こ
の台座電極上に形成されたパッド電極をさらに含む窒化
物半導体発光素子であることを特徴としている。In order to achieve the above object, the present invention provides a nitride semiconductor laminated structure including a plurality of nitride semiconductor layers including a light emitting layer, and a nitride semiconductor layer on the laminated structure. And a pedestal electrode including a silicon layer, and further includes a pad electrode formed on the pedestal electrode, which is a nitride semiconductor light emitting device.
【０００６】台座電極に含まれるシリコン層は、上述の
窒化物半導体積層構造体を成長させる基板として利用さ
れたものであり得る。このシリコン層は、導電性または
非導電性でもよく、好ましくは導電性である。The silicon layer included in the pedestal electrode may be one used as a substrate for growing the above-described nitride semiconductor laminated structure. This silicon layer may be conducting or non-conducting, and is preferably conducting.
【０００７】また、台座電極に含まれる窒化物半導体層
は、上述の窒化物半導体積層構造体を成長させる際のバ
ッファ層として利用されたものであり得る。この窒化物
半導体層は導電性または非導電性の性質を有する。Further, the nitride semiconductor layer included in the pedestal electrode may be used as a buffer layer when growing the above-mentioned nitride semiconductor laminated structure. This nitride semiconductor layer has a conductive or non-conductive property.
【０００８】また、台座電極表面またはパッド電極表面
または窒化物半導体積層構造体の発光面に透明導電膜を
含めることもできる。Further, a transparent conductive film may be included on the surface of the pedestal electrode or the surface of the pad electrode or the light emitting surface of the nitride semiconductor laminated structure.
【０００９】また、台座電極に含まれる窒化物半導体層
が非導電性である場合には、この窒化物半導体層は電流
阻止層として機能し得る。When the nitride semiconductor layer included in the pedestal electrode is non-conductive, this nitride semiconductor layer can function as a current blocking layer.
【００１０】[0010]
【発明の実施の形態】以下、本発明についてより詳細に
説明する。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in more detail below.
【００１１】本発明における窒化物半導体発光素子は、
たとえば、ｎ型窒化物半導体層、発光層、ｐ型窒化物半
導体層、ｐ型窒化物半導体コンタクト層を順次積層した
構造体から成り、さらにｐ型窒化物半導体コンタクト層
上にｐ型電極層およびｐ型台座電極層を順次形成した構
造体を含み、その構造体上に窒化物半導体層とシリコン
層を含む台座電極を含み、この台座電極上に形成された
パッド電極を含んでいる。ただし、上述した構造体の構
成は上記に限られない。また、台座電極に含まれる窒化
物半導体層および構造体に含まれる発光層を含む窒化物
半導体層の材質としては、ＩｎxＡｌyＧａ1-x-yＮ（０
≦ｘ、０≦ｙ、ｘ＋ｙ≦１）等がある。また、発光層と
してはＭＱＷ（多重量子井戸）発光層またはＳＱＷ（単
一量子井戸）発光層等がある。The nitride semiconductor light emitting device of the present invention comprises
For example, it is composed of a structure in which an n-type nitride semiconductor layer, a light emitting layer, a p-type nitride semiconductor layer, and a p-type nitride semiconductor contact layer are sequentially stacked, and a p-type electrode layer and a p-type electrode layer are formed on the p-type nitride semiconductor contact layer. The structure includes a p-type pedestal electrode layer sequentially formed, a pedestal electrode including a nitride semiconductor layer and a silicon layer on the structure, and a pad electrode formed on the pedestal electrode. However, the structure of the structure described above is not limited to the above. The material of the nitride semiconductor layer including a light emitting layer included in the nitride semiconductor layer and the structure contained in the pad electrode, In x Al y Ga 1- xy N (0
≦ x, 0 ≦ y, x + y ≦ 1) and the like. As the light emitting layer, there are an MQW (multiple quantum well) light emitting layer and an SQW (single quantum well) light emitting layer.
【００１２】ここで、台座電極に含まれるシリコン層は
上述の積層構造体等を成長させる基板となり得る。すな
わち、上述の窒化物半導体発光素子の構成において説明
すると、この窒化物半導体発光素子は台座電極に含まれ
るシリコン層上にｎ型窒化物半導体層、発光層、ｐ型窒
化物半導体層、ｐ型窒化物半導体コンタクト層を順次積
層した後、ｐ型電極層、ｐ型台座電極層を順次形成し、
台座電極をエッチング等の手法で円形状または正方形状
等に形成することにより作製され得る。ここで、台座電
極は積層構造体の中央の位置に作製することが好まし
い。また、台座電極の形状は円形状、正方形状等に限ら
れない。また、シリコン層のシリコン以外の材質として
は、導電性または非導電性であるＧａＡｓ、ＧａＰ、Ｉ
ｎＰ等であることが好ましい。Here, the silicon layer included in the pedestal electrode can serve as a substrate for growing the above-mentioned laminated structure or the like. That is, the structure of the above-described nitride semiconductor light emitting device will be described. This nitride semiconductor light emitting device has an n-type nitride semiconductor layer, a light emitting layer, a p-type nitride semiconductor layer, and a p-type nitride semiconductor layer on a silicon layer included in a pedestal electrode. After sequentially stacking the nitride semiconductor contact layers, a p-type electrode layer and a p-type pedestal electrode layer are sequentially formed,
It can be manufactured by forming the pedestal electrode into a circular shape or a square shape by a method such as etching. Here, it is preferable that the pedestal electrode is formed at a central position of the laminated structure. The shape of the base electrode is not limited to the circular shape, the square shape, or the like. Further, as the material of the silicon layer other than silicon, conductive or non-conductive GaAs, GaP, I
It is preferably nP or the like.
【００１３】この場合には特開平１１−１７７１４２号
公報において開示されたように半導体層上に直接、別個
にパッド電極を形成するのではなく、台座電極に含まれ
るシリコン層上に発光素子を成長させ、台座電極の形状
を整えた後に台座電極上にパッド電極を形成することと
なる。したがって、パッド電極を台座電極上に形成する
際に発光素子に発生する応力を台座電極が緩衝し得るこ
とから、発光素子にかかる応力を軽減し得る。In this case, the light emitting element is grown on the silicon layer included in the pedestal electrode instead of directly forming the pad electrode directly on the semiconductor layer as disclosed in JP-A-11-177142. Then, after adjusting the shape of the base electrode, the pad electrode is formed on the base electrode. Therefore, since the pedestal electrode can buffer the stress generated in the light emitting element when the pad electrode is formed on the pedestal electrode, the stress applied to the light emitting element can be reduced.
【００１４】また、発光素子外部から電流を注入する場
合には、パッド電極にワイヤボンディング等する必要が
あるが、この際にも発光素子に生じる応力を台座電極が
緩衝し得ることから、発光素子にかかる応力を軽減し得
る。Further, when a current is injected from the outside of the light emitting element, it is necessary to wire-bond the pad electrode. However, since the pedestal electrode can buffer the stress generated in the light emitting element at this time as well, the light emitting element can be buffered. It is possible to reduce the stress applied to.
【００１５】したがって、本発明においては、パッド電
極を設置する際およびパッド電極にワイヤボンディング
する際の発光素子におけるクラックの発生を防止し得
る。Therefore, in the present invention, it is possible to prevent the occurrence of cracks in the light emitting element when the pad electrode is installed and when the pad electrode is wire-bonded.
【００１６】さらにこの場合には、金属、絶縁体膜等の
蒸着等により発光素子上に電極を別個形成したり、再成
長させたりする製造工程の必要がないため、金属、絶縁
体膜等を形成する場合の熱サイクルや熱応力等による発
光素子の歪みから生じるクラックを防止し得るだけでな
く、本発明における窒化物半導体発光素子の製造歩留り
および製品のコストパフォーマンスを向上し得る。Further, in this case, since there is no need for a manufacturing process in which an electrode is separately formed on the light emitting element by vapor deposition of a metal or an insulator film or the like, or is regrown, a metal or an insulator film or the like is not required. Not only can cracks caused by strain of the light emitting element due to thermal cycles and thermal stress in the formation be prevented, but also the manufacturing yield of the nitride semiconductor light emitting element in the present invention and the cost performance of the product can be improved.
【００１７】また、台座電極に含まれる窒化物半導体層
は、シリコン層上に上述の積層構造体を成長させる場合
にはバッファ層として使用され得る。また、この窒化物
半導体層は、導電性または非導電性の性質を有してい
る。この窒化物半導体層が導電性である場合には、台座
電極上のパッド電極にＡｕ等のワイヤをボンディングす
ることにより、このワイヤから台座電極を通して発光素
子内部へ電流を注入し得る。Further, the nitride semiconductor layer included in the pedestal electrode can be used as a buffer layer when the above-mentioned laminated structure is grown on the silicon layer. Further, this nitride semiconductor layer has a conductive or non-conductive property. When the nitride semiconductor layer is conductive, a wire such as Au can be bonded to the pad electrode on the pedestal electrode to inject a current from the wire into the light emitting element through the pedestal electrode.
【００１８】また、この窒化物半導体層が非導電性であ
る場合には、電流阻止層として利用することもでき、窒
化物半導体層の下方に位置する発光層に電流を注入する
ことがないことから、この窒化物半導体層の下方に位置
する発光層からは発光することがない。したがって、発
光素子の発光層から発生した光がこの窒化物半導体層を
含む台座電極上に設置された光を透過しない金属等から
なるパッド電極等によって遮られることがないため、窒
化物半導体発光素子の外部発光効率を向上させることが
できる。さらにまた、この窒化物半導体層が非導電性で
ある場合には台座電極表面またはパッド電極表面または
発光素子の発光面等に透明導電膜を設置することによ
り、発光面上に均一に電流を拡げ、均一に発光すること
ができる。When the nitride semiconductor layer is non-conductive, it can be used as a current blocking layer, and no current is injected into the light emitting layer located below the nitride semiconductor layer. Therefore, the light emitting layer located below the nitride semiconductor layer does not emit light. Therefore, since the light generated from the light emitting layer of the light emitting element is not blocked by the pad electrode made of a metal or the like which does not transmit the light and is installed on the pedestal electrode including the nitride semiconductor layer, the nitride semiconductor light emitting element The external luminous efficiency of can be improved. Furthermore, when the nitride semiconductor layer is non-conductive, a transparent conductive film is provided on the surface of the pedestal electrode or the surface of the pad electrode or the light emitting surface of the light emitting element to spread the current evenly on the light emitting surface. It is possible to emit light uniformly.
【００１９】また、パッド電極はＡｕ等の材質からなっ
ており、台座電極上に蒸着等の方法により設置され得
る。このパッド電極に外部電流注入用等のＡｕ等のワイ
ヤがボンディングされ得る。この接合方法としては、熱
圧着と超音波圧着の併用による方法が好ましい。Further, the pad electrode is made of a material such as Au and can be installed on the pedestal electrode by a method such as vapor deposition. A wire such as Au for injecting an external current may be bonded to the pad electrode. As this joining method, a method using both thermocompression bonding and ultrasonic pressure bonding is preferable.
【００２０】[0020]
【実施例】以下、本発明の窒化物半導体発光素子の具体
的実施例を示すが、本発明はこれらの実施例により何ら
限定されるものではない。EXAMPLES Specific examples of the nitride semiconductor light emitting device of the present invention will be shown below, but the present invention is not limited to these examples.
【００２１】（実施例１）図１は本発明の実施例１によ
って作製された窒化物半導体発光素子の模式的な断面図
である。図１に示された実施例１による窒化物半導体発
光素子構造１０００は、Ｓｉからなる導電性基板１およ
びＧａＮからなる窒化物半導体導電性バッファ層２１に
より構成されるｎ型台座電極７７、ｎ型パッド電極７、
Ａｕワイヤ１０、ｎ型窒化物半導体層３、発光層４、ｐ
型窒化物半導体層５、ｐ型窒化物半導体コンタクト層
６、ｐ型電極９１およびｐ型台座電極９を含んでいる。
ｐ型電極９１とｐ型台座電極９は金属膜からなり、発光
層４から発生した光を透過しないのに対して、ｎ型窒化
物半導体層３は発光に対して透明であることから、本発
明の窒化物半導体発光素子はｎ型窒化物半導体層３表面
から発光することとなる。Example 1 FIG. 1 is a schematic cross-sectional view of a nitride semiconductor light emitting device manufactured according to Example 1 of the present invention. The nitride semiconductor light emitting device structure 1000 according to the first embodiment shown in FIG. 1 includes an n-type pedestal electrode 77 and an n-type pedestal electrode 77 configured by a conductive substrate 1 made of Si and a nitride semiconductor conductive buffer layer 21 made of GaN. Pad electrode 7,
Au wire 10, n-type nitride semiconductor layer 3, light emitting layer 4, p
The p-type nitride semiconductor layer 5, the p-type nitride semiconductor contact layer 6, the p-type electrode 91 and the p-type pedestal electrode 9 are included.
Since the p-type electrode 91 and the p-type pedestal electrode 9 are made of a metal film and do not transmit the light generated from the light emitting layer 4, the n-type nitride semiconductor layer 3 is transparent to light emission. The nitride semiconductor light emitting device of the invention emits light from the surface of the n-type nitride semiconductor layer 3.
【００２２】図１の窒化物半導体発光素子を作製する場
合、まず、ＭＯＣＶＤ（有機金属気相成長法）装置内に
導電性基板１をセットし、この導電性基板１上に窒化物
半導体導電性バッファ層２１を１５０ｎｍの厚さに成長
させ、順次ｎ型窒化物半導体層３を４００ｎｍの厚さ
に、発光層４を５０ｎｍの厚さに、ｐ型窒化物半導体層
５を１０ｎｍの厚さに、そしてｐ型窒化物半導体コンタ
クト層６を２００ｎｍの厚さに成長させたウエハを形成
する。When manufacturing the nitride semiconductor light emitting device of FIG. 1, first, the conductive substrate 1 is set in a MOCVD (metal organic chemical vapor deposition) apparatus, and the nitride semiconductor conductivity is set on the conductive substrate 1. The buffer layer 21 is grown to a thickness of 150 nm, the n-type nitride semiconductor layer 3 is formed to a thickness of 400 nm, the light emitting layer 4 is formed to a thickness of 50 nm, and the p-type nitride semiconductor layer 5 is formed to a thickness of 10 nm. Then, a wafer in which the p-type nitride semiconductor contact layer 6 is grown to a thickness of 200 nm is formed.
【００２３】次に、装置からウエハを取り出し、ｐ型窒
化物半導体コンタクト層６表面上にｐ型電極９１として
Ｐｄ（パラジウム）を５０ｎｍの厚さに、そしてその上
にｐ型台座電極９としてＮｉ（ニッケル）を８０μｍの
厚さに形成する。Next, the wafer is taken out of the apparatus, and Pd (palladium) as a p-type electrode 91 having a thickness of 50 nm is formed on the surface of the p-type nitride semiconductor contact layer 6 and Ni as a p-type pedestal electrode 9 is formed thereon. (Nickel) is formed to a thickness of 80 μm.
【００２４】次に、フォト工程により導電性基板１をフ
ッ酸系エッチング液にて不要な部分を除去し、円形状に
加工する。このとき直径を１００μｍに形成する。ま
た、このときこの円形状以外の領域では窒化物半導体導
電性バッファ層２１が露出している。Next, the conductive substrate 1 is processed into a circular shape by a photo process to remove unnecessary portions with a hydrofluoric acid-based etching solution. At this time, the diameter is formed to 100 μm. At this time, the nitride semiconductor conductive buffer layer 21 is exposed in the region other than the circular shape.
【００２５】次に、ドライエッチング法、ここではＲＩ
Ｅ（反応性イオンエッチング）法を用いてこの窒化物半
導体導電性バッファ層２１を塩素系ガスを用いてエッチ
ングし、上記ｎ型窒化物半導体層３を露出させる。この
加工により、直径１００μｍの円形状の導電性基板１と
窒化物半導体導電性バッファ層２１からなるｎ型台座電
極７７が形成される。ここで、ｎ型台座電極７７はｎ型
窒化物半導体層３の発光表面のほぼ中心に形成される。Next, a dry etching method, here RI
The nitride semiconductor conductive buffer layer 21 is etched by using a chlorine-based gas by using the E (reactive ion etching) method to expose the n-type nitride semiconductor layer 3. By this processing, the n-type pedestal electrode 77 including the circular conductive substrate 1 having a diameter of 100 μm and the nitride semiconductor conductive buffer layer 21 is formed. Here, the n-type pedestal electrode 77 is formed substantially at the center of the light emitting surface of the n-type nitride semiconductor layer 3.
【００２６】次に、ｎ型台座電極７７上にＡｕからなる
ｎ型パッド電極７を０．５μｍの厚さに形成する。Next, the n-type pad electrode 7 made of Au is formed on the n-type pedestal electrode 77 to a thickness of 0.5 μm.
【００２７】次に、上述のように加工を終了したウエハ
を３５０μｍ角の四角形のチップとし、このチップのｐ
型台座電極９側をリードフレームのカップ部に乗せた
後、ｎ型パッド電極７にＡｕワイヤ１０を接合する。Next, the wafer which has been processed as described above is formed into a quadrangular chip of 350 μm square, and the p of this chip is set.
After placing the mold pedestal electrode 9 side on the cup portion of the lead frame, the Au wire 10 is bonded to the n-type pad electrode 7.
【００２８】こうして形成された実施例１における窒化
物半導体発光素子は、従来技術のように窒化物半導体層
上に直接、パッド電極を設置する構成ではない。したが
って、従来技術よりも窒化物半導体発光素子においてク
ラックの発生等による短絡および不均一な発光パターン
の発生を防止でき、窒化物半導体発光素子の製造歩留り
を向上させることができた。さらに、ｎ型台座電極７７
に含まれる導電性基板１を発光素子層を成長させる基板
として利用することから、窒化物半導体発光素子の作製
が従来技術よりも容易となった。The thus formed nitride semiconductor light emitting device according to the first embodiment does not have a structure in which the pad electrode is directly provided on the nitride semiconductor layer as in the prior art. Therefore, in the nitride semiconductor light emitting device, it is possible to prevent a short circuit and an uneven light emitting pattern from occurring in the nitride semiconductor light emitting device, and it is possible to improve the manufacturing yield of the nitride semiconductor light emitting device. Furthermore, the n-type pedestal electrode 77
Since the conductive substrate 1 included in 1 is used as a substrate for growing the light emitting element layer, the fabrication of the nitride semiconductor light emitting element is easier than that of the conventional technique.
【００２９】（実施例２）図２は本発明の実施例２によ
って作製された窒化物半導体発光素子の模式的な断面図
である。図２に示された実施例２による窒化物半導体発
光素子構造２０００は、Ｓｉからなる導電性基板１およ
びＡｌＮからなる窒化物半導体バッファ層２により構成
されるｎ型台座電極７７、ｎ型パッド電極７、Ａｕワイ
ヤ１０、ｎ型窒化物半導体層３、発光層４、ｐ型窒化物
半導体層５、ｐ型窒化物半導体コンタクト層６、透光性
電極８、ｐ型電極９１およびｐ型台座電極９を含んでい
る。Example 2 FIG. 2 is a schematic sectional view of a nitride semiconductor light emitting device manufactured according to Example 2 of the present invention. The nitride semiconductor light emitting device structure 2000 according to the second embodiment shown in FIG. 2 includes an n-type pedestal electrode 77 and an n-type pad electrode configured by a conductive substrate 1 made of Si and a nitride semiconductor buffer layer 2 made of AlN. 7, Au wire 10, n-type nitride semiconductor layer 3, light emitting layer 4, p-type nitride semiconductor layer 5, p-type nitride semiconductor contact layer 6, translucent electrode 8, p-type electrode 91 and p-type pedestal electrode Includes 9.
【００３０】図２の窒化物半導体発光素子を作製する場
合、まず、ＭＯＣＶＤ装置内に導電性基板１をセット
し、この導電性基板１上に窒化物半導体バッファ層２を
１００ｎｍの厚さに成長させ、順次ｎ型窒化物半導体層
３を５００ｎｍの厚さに、発光層４を４０ｎｍの厚さ
に、ｐ型窒化物半導体層５を５ｎｍの厚さに、そしてｐ
型窒化物半導体コンタクト層６を１５０ｎｍの厚さに成
長させたウエハを形成する。When manufacturing the nitride semiconductor light emitting device of FIG. 2, first, the conductive substrate 1 is set in the MOCVD apparatus, and the nitride semiconductor buffer layer 2 is grown to a thickness of 100 nm on the conductive substrate 1. The n-type nitride semiconductor layer 3 has a thickness of 500 nm, the light-emitting layer 4 has a thickness of 40 nm, the p-type nitride semiconductor layer 5 has a thickness of 5 nm, and p
A wafer in which the type nitride semiconductor contact layer 6 is grown to a thickness of 150 nm is formed.
【００３１】次に、装置からウエハを取り出し、ｐ型窒
化物半導体コンタクト層６の表面上にｐ型電極９１とし
てＰｄを３０ｎｍの厚さに、そしてその上にｐ型台座電
極９としてＮｉを１００μｍの厚さに形成する。Next, the wafer is taken out from the apparatus, Pd is formed to a thickness of 30 nm as a p-type electrode 91 on the surface of the p-type nitride semiconductor contact layer 6, and Ni is 100 μm as a p-type pedestal electrode 9 thereon. To the thickness of.
【００３２】次に、導電性基板１を研削、研磨を用い
て、残り厚さが１０μｍになるように加工する。Next, the conductive substrate 1 is processed by grinding and polishing so that the remaining thickness is 10 μm.
【００３３】次に、フォト工程により導電性基板１をフ
ッ酸系エッチング液にて不要な部分を除去し、円形状に
加工する。このときこの円形状の直径を１２０μｍに形
成する。ここでこの直径はＡｕワイヤ１０をパッド電極
７に接合する場合の接合径と同じにした。また、このと
きこの円形状以外の領域では窒化物半導体バッファ層２
が露出している。Next, the conductive substrate 1 is processed into a circular shape by a photo process to remove unnecessary portions with a hydrofluoric acid-based etching solution. At this time, the diameter of this circular shape is formed to 120 μm. Here, this diameter is the same as the bonding diameter when the Au wire 10 is bonded to the pad electrode 7. Further, at this time, in the region other than the circular shape, the nitride semiconductor buffer layer 2 is formed.
Is exposed.
【００３４】次に、ドライエッチング法、ここではＲＩ
Ｅ法を用いて窒化物半導体バッファ層２を塩素系ガスを
用いてエッチングし、ｎ型窒化物半導体層３を露出させ
る。この加工により、直径１２０μｍの円形状の導電性
基板１と窒化物半導体バッファ層２からなるｎ型台座電
極７７が前記ｎ型窒化物半導体層３上に形成される。こ
こで、ｎ型台座電極７７はｎ型窒化物半導体層３の発光
表面のほぼ中心に形成される。Next, a dry etching method, here RI
The N-type nitride semiconductor layer 3 is exposed by etching the nitride semiconductor buffer layer 2 using chlorine gas using the E method. By this processing, the n-type pedestal electrode 77 composed of the circular conductive substrate 1 having a diameter of 120 μm and the nitride semiconductor buffer layer 2 is formed on the n-type nitride semiconductor layer 3. Here, the n-type pedestal electrode 77 is formed substantially at the center of the light emitting surface of the n-type nitride semiconductor layer 3.
【００３５】次に、ｎ型台座電極７７上にＡｕを用いて
ｎ型パッド電極７を０．５μｍの厚さに形成する。Next, the n-type pad electrode 7 is formed on the n-type pedestal electrode 77 using Au to have a thickness of 0.5 μm.
【００３６】次に、ｎ型パッド電極７表面またはｎ型台
座電極７７表面またはｎ型窒化物半導体層３表面に透光
性電極８として透明導電膜ＩＴＯ（ＳｎドープＩｎ
2Ｏ3）を２００ｎｍの厚さに形成する。Next, a transparent conductive film ITO (Sn-doped In) is formed as a transparent electrode 8 on the surface of the n-type pad electrode 7, the surface of the n-type pedestal electrode 77, or the surface of the n-type nitride semiconductor layer 3.
2 O 3 ) is formed to a thickness of 200 nm.
【００３７】次に、上述の加工を終了したウエハを３５
０μｍ角の四角形のチップとし、このチップのｐ型台座
電極９側をリードフレームのカップ部に乗せた後、ｎ型
パッド電極７にＡｕワイヤ１０を接合する。Next, the wafer after the above-mentioned processing is finished with 35 wafers.
After forming a square chip of 0 μm square, placing the p-type pedestal electrode 9 side of this chip on the cup portion of the lead frame, the Au wire 10 is bonded to the n-type pad electrode 7.
【００３８】こうして形成された実施例２における窒化
物半導体発光素子は、ｎ型パッド電極７表面またはｎ型
台座電極７７表面またはｎ型窒化物半導体層３表面に透
光性電極８として透明導電膜ＩＴＯを形成しているた
め、実施例１における窒化物半導体発光素子よりも、電
流を窒化物半導体発光素子に均一に注入でき、均一な発
光が確認できた。ここで、透光性電極８としては、Ｓｂ
（アンチモン）またはＦ（フッ素）をドープしたＳｎＯ
2（酸化スズ）、Ａｌ（アルミニウム）またはＧａ（ガ
リウム）をドープしたＺｎＯ（酸化亜鉛）等も使用され
得る。また本実施例の場合は、基板１には非導電性の基
板も使用され得る。In the nitride semiconductor light emitting device thus formed in Example 2, the transparent conductive film as the transparent electrode 8 is formed on the surface of the n-type pad electrode 7, the surface of the n-type pedestal electrode 77 or the surface of the n-type nitride semiconductor layer 3. Since ITO was formed, a current could be injected more uniformly into the nitride semiconductor light emitting device than in the nitride semiconductor light emitting device in Example 1, and uniform light emission could be confirmed. Here, as the translucent electrode 8, Sb
SnO doped with (antimony) or F (fluorine)
ZnO (zinc oxide) doped with 2 (tin oxide), Al (aluminum) or Ga (gallium) may also be used. Further, in the case of the present embodiment, a non-conductive substrate may be used as the substrate 1.
【００３９】（実施例３）図３は本発明の実施例３によ
って作製された窒化物半導体発光素子の模式的な上面図
である。また、図４において、本実施例における窒化物
半導体発光素子上部の模式的な断面図を示す。図３およ
び図４に示された実施例３による窒化物半導体発光素子
構造３０００は、Ｓｉからなる導電性基板１およびＡｌ
0.2Ｇａ0.8Ｎからなる窒化物半導体バッファ層２により
構成されるｎ型台座電極７７、ｎ型パッド電極７、Ａｕ
ワイヤ１０、ｎ型窒化物半導体層３、発光層４、ｐ型窒
化物半導体層５、ｐ型窒化物半導体コンタクト層６、透
光性電極８、ｐ型電極９１およびｐ型台座電極９を含ん
でいる。Example 3 FIG. 3 is a schematic top view of a nitride semiconductor light emitting device manufactured according to Example 3 of the present invention. Further, FIG. 4 shows a schematic cross-sectional view of the upper portion of the nitride semiconductor light emitting device in this example. The nitride semiconductor light emitting device structure 3000 according to the third embodiment shown in FIGS. 3 and 4 includes a conductive substrate 1 made of Si and Al.
The n-type pedestal electrode 77, the n-type pad electrode 7, and Au composed of the nitride semiconductor buffer layer 2 made of 0.2 Ga 0.8 N
The wire 10, the n-type nitride semiconductor layer 3, the light emitting layer 4, the p-type nitride semiconductor layer 5, the p-type nitride semiconductor contact layer 6, the transparent electrode 8, the p-type electrode 91 and the p-type pedestal electrode 9 are included. I'm out.
【００４０】図３および図４に示された窒化物半導体発
光素子を作製する場合、まず、ＭＯＣＶＤ装置内に導電
性基板１をセットし、導電性基板１上に窒化物半導体バ
ッファ層２を１００ｎｍの厚さに成長させ、順次ｎ型窒
化物半導体層３を４００ｎｍの厚さに、発光層４を４０
ｎｍの厚さに、ｐ型窒化物半導体層５を１５ｎｍの厚さ
に、ｐ型窒化物半導体コンタクト層６を１５０ｎｍの厚
さに成長させたウエハを形成する。When the nitride semiconductor light emitting device shown in FIGS. 3 and 4 is manufactured, first, the conductive substrate 1 is set in the MOCVD apparatus, and the nitride semiconductor buffer layer 2 having a thickness of 100 nm is formed on the conductive substrate 1. Of the n-type nitride semiconductor layer 3 having a thickness of 400 nm and the light emitting layer 4 having a thickness of 40 nm.
nm, the p-type nitride semiconductor layer 5 is grown to a thickness of 15 nm, and the p-type nitride semiconductor contact layer 6 is grown to a thickness of 150 nm to form a wafer.
【００４１】装置からウエハを取り出し、ｐ型窒化物半
導体コンタクト層６表面上にｐ型電極９１としてＰｄを
３０ｎｍの厚さに形成し、その上にｐ型台座電極９とし
てＮｉを８０μｍの厚さに形成する。The wafer is taken out of the apparatus, Pd is formed as a p-type electrode 91 to a thickness of 30 nm on the surface of the p-type nitride semiconductor contact layer 6, and Ni is formed to a thickness of 80 μm as a p-type pedestal electrode 9 thereon. To form.
【００４２】次に、導電性基板１を研削、研磨を用い
て、残り厚さが５μｍになるように加工する。Next, the conductive substrate 1 is processed by grinding and polishing so that the remaining thickness becomes 5 μm.
【００４３】次に、フォト工程により導電性基板１を全
面にわたりフッ酸系エッチング液にて不要な部分を除去
し、円形状に加工する。このとき円形状ｎ型台座電極７
７以外は窒化物半導体バッファ層２表面が露出してい
る。Next, the conductive substrate 1 is subjected to a photo process to remove unnecessary portions with a hydrofluoric acid-based etching solution over the entire surface, and is processed into a circular shape. At this time, the circular n-type base electrode 7
Except for 7, the surface of the nitride semiconductor buffer layer 2 is exposed.
【００４４】次に、ドライエッチング法、ここではＲＩ
Ｅ法を用いて窒化物半導体バッファ層２を塩素系ガスを
用いてストライプ状に加工する。このとき、ｎ型窒化物
半導体層３が露出し、線幅１５μｍのストライプ状の窒
化物半導体バッファ層２が前記ｎ型窒化物半導体層３上
に形成され得る。Next, a dry etching method, here RI
Using the E method, the nitride semiconductor buffer layer 2 is processed into a stripe shape using a chlorine-based gas. At this time, the n-type nitride semiconductor layer 3 is exposed, and the stripe-shaped nitride semiconductor buffer layer 2 having a line width of 15 μm can be formed on the n-type nitride semiconductor layer 3.
【００４５】次に、ｎ型台座電極７７上にＡｕを用いて
ｎ型パッド電極７を１μｍの厚さに形成する。Next, the n-type pad electrode 7 is formed on the n-type pedestal electrode 77 using Au to have a thickness of 1 μm.
【００４６】次に、窒化物半導体バッファ層２またはｎ
型窒化物半導体バッファ層３を覆うように透光性電極８
として透明導電膜ＩＴＯを２５０ｎｍの厚さに形成す
る。Next, the nitride semiconductor buffer layer 2 or n
-Type transmissive electrode 8 covering the nitride semiconductor buffer layer 3
As a transparent conductive film ITO, a film having a thickness of 250 nm is formed.
【００４７】次に、上述の加工を終了したウエハを５０
０μｍ角の四角形のチップとし、このチップのｐ型台座
電極９側をリードフレームのカップ部に乗せた後、ｎ型
パッド電極７にＡｕワイヤ１０を接合する。Next, 50 wafers that have undergone the above processing are processed.
After forming a square chip of 0 μm square, placing the p-type pedestal electrode 9 side of this chip on the cup portion of the lead frame, the Au wire 10 is bonded to the n-type pad electrode 7.
【００４８】こうして形成された実施例３における窒化
物半導体発光素子は、発光素子層にクラックの入りやす
い方向にストライプ状の窒化物半導体バッファ層２が形
成されている。したがって、窒化物半導体バッファ層２
が非導電性である場合には、ストライプ状の窒化物半導
体バッファ層２の下部に発生したクラックには電流が流
れないため、窒化物半導体発光素子の短絡防止となるこ
とから、実施例１における窒化物半導体発光素子より
も、窒化物半導体発光素子電流をに均一に注入でき、均
一な発光が確認できた。In the nitride semiconductor light emitting device of Example 3 thus formed, the stripe-shaped nitride semiconductor buffer layer 2 is formed in the light emitting device layer in the direction where cracks are likely to occur. Therefore, the nitride semiconductor buffer layer 2
Is non-conductive, no current flows through the cracks generated under the stripe-shaped nitride semiconductor buffer layer 2, which prevents short-circuiting of the nitride semiconductor light emitting device. The current of the nitride semiconductor light emitting device can be injected more uniformly than that of the nitride semiconductor light emitting device, and uniform light emission can be confirmed.
【００４９】ここで、透光性電極８としては、Ｓｂまた
はＦをドープしたＳｎＯ2、ＡｌまたはＧａをドープし
たＺｎＯ等も使用され得る。Here, as the transparent electrode 8, SnO 2 doped with Sb or F, ZnO doped with Al or Ga, or the like may be used.
【００５０】また、本実施例においては、ストライプ状
の窒化物半導体バッファ層２をクラックが発生しやすい
方向だけでなく、いずれの方向にも設置し得る。また、
ストライプの幅、本数、形状も上記実施例には限られな
い。In the present embodiment, the stripe-shaped nitride semiconductor buffer layer 2 can be installed not only in the direction in which cracks are likely to occur but also in any direction. Also,
The width, number and shape of the stripes are not limited to those in the above embodiment.
【００５１】[0051]
【発明の効果】本発明においては、ワイヤ接合用等のパ
ッド電極層の下に台座電極を設置することにより、パッ
ド電極を形成する際またはワイヤを接合する際等の発光
素子に発生する応力を緩衝することにより、発光素子に
おけるクラックの発生を防止し得る。ひいては発光素子
の短絡防止となり、信頼性の優れた発光素子が得られ
る。さらに、本発明では、台座電極が発光素子を成長さ
せる基板になり得ることから、金属、絶縁体膜等で蒸着
して電極を形成する必要がなくなり、製造工程の省略
化、発光素子の生産性の向上、コストパフォーマンスに
優れた発光素子の生産を図ることができ得る。さらに本
発明において、台座電極に非導電性の窒化物半導体バッ
ファ層を含んでおり、発光素子の発光面とシリコン層の
間にこの窒化物半導体バッファ層が設置された場合に
は、このバッファ層が電流阻止層として機能するためバ
ッファ層下部の発光層での発光がなく、バッファ層上部
に設置されたパッド電極によって光が遮断されることが
ないことから、発光素子の外部発光効率が向上し得る。According to the present invention, by installing the pedestal electrode under the pad electrode layer for wire bonding or the like, the stress generated in the light emitting element when the pad electrode is formed or the wire is bonded is reduced. By buffering, generation of cracks in the light emitting element can be prevented. As a result, a short circuit of the light emitting element is prevented, and a highly reliable light emitting element can be obtained. Further, in the present invention, since the pedestal electrode can serve as a substrate for growing the light emitting element, it is not necessary to form the electrode by vapor deposition with a metal, an insulating film, etc., and the manufacturing process can be omitted and the productivity of the light emitting element can be improved. It is possible to improve the production efficiency and to produce a light emitting device having excellent cost performance. Further, in the present invention, the pedestal electrode includes a non-conductive nitride semiconductor buffer layer, and when the nitride semiconductor buffer layer is provided between the light emitting surface of the light emitting element and the silicon layer, the buffer layer Function as a current blocking layer, light is not emitted from the light emitting layer below the buffer layer, and light is not blocked by the pad electrode provided above the buffer layer. Therefore, the external light emission efficiency of the light emitting element is improved. obtain.
【図１】 本発明の実施例１によって作製された窒化物
半導体発光素子の模式的な断面図である。FIG. 1 is a schematic cross-sectional view of a nitride semiconductor light emitting device manufactured according to Example 1 of the present invention.
【図２】 本発明の実施例２によって作製された窒化物
半導体発光素子の模式的な断面図である。FIG. 2 is a schematic cross-sectional view of a nitride semiconductor light emitting device manufactured according to Example 2 of the present invention.
【図３】 本発明の実施例３によって作製された窒化物
半導体発光素子の模式的な上面図である。FIG. 3 is a schematic top view of a nitride semiconductor light emitting device manufactured according to Example 3 of the present invention.
【図４】 本発明の実施例３によって作製された窒化物
半導体発光素子上部の模式的な断面図である。FIG. 4 is a schematic cross-sectional view of an upper portion of a nitride semiconductor light emitting device manufactured according to Example 3 of the present invention.
【図５】 特開平１１−１７７１４２号公報に開示され
たＧａＮ系の半導体素子の概略構成を示す断面図であ
る。FIG. 5 is a cross-sectional view showing a schematic configuration of a GaN-based semiconductor element disclosed in JP-A-11-177142.
１ 導電性基板、２ 窒化物半導体バッファ層、２１
窒化物半導体導電性バッファ層、３ ｎ型窒化物半導体
層、４ 発光層、５ ｐ型窒化物半導体層、６ｐ型窒化
物半導体コンタクト層、７ ｎ型パッド電極、７７ ｎ
型台座電極、８ 透光性電極、９ ｐ型台座電極、９１
ｐ型電極、１０ Ａｕワイヤ、１００ 上部クラッド
層、２００ 発光層、３００ 下部クラッド層、４００
バッファ層、５００ Ｓｉ基板、６００ ｐ型パッド
電極。1 conductive substrate, 2 nitride semiconductor buffer layer, 21
Nitride semiconductor conductive buffer layer, 3 n-type nitride semiconductor layer, 4 light emitting layer, 5 p-type nitride semiconductor layer, 6 p-type nitride semiconductor contact layer, 7 n-type pad electrode, 77 n
Type pedestal electrode, 8 translucent electrode, 9 p type pedestal electrode, 91
p-type electrode, 10 Au wire, 100 upper clad layer, 200 light emitting layer, 300 lower clad layer, 400
Buffer layer, 500 Si substrate, 600 p-type pad electrode.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 木村 大覚 大阪府大阪市阿倍野区長池町22番22号 シ ャープ株式会社内 Ｆターム(参考） 4M104 AA04 BB07 BB36 CC01 FF02 FF13 GG04 5F041 AA03 AA21 CA05 CA34 CA35 CA37 CA65 CA74 CA82 CA92 CA93 CA98 DA07 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Daikaku Kimura 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka Inside the company F-term (reference) 4M104 AA04 BB07 BB36 CC01 FF02 FF13 GG04 5F041 AA03 AA21 CA05 CA34 CA35 CA37 CA65 CA74 CA82 CA92 CA93 CA98 DA07
Claims (6)
成る窒化物半導体積層構造体と、前記積層構造体上に窒
化物半導体層とシリコン層を含む台座電極とを含み、前
記台座電極上に形成されたパッド電極をさらに含むこと
を特徴とする窒化物半導体発光素子。1. A nitride semiconductor laminated structure including a plurality of nitride semiconductor layers including a light emitting layer, and a pedestal electrode including a nitride semiconductor layer and a silicon layer on the laminated structure, the pedestal electrode being on the pedestal electrode. A nitride semiconductor light emitting device, further comprising a pad electrode formed on.
前記積層構造体を成長させる基板として利用されたもの
であることを特徴とする請求項１に記載の窒化物半導体
発光素子。2. The silicon layer included in the pedestal electrode comprises:
The nitride semiconductor light emitting device according to claim 1, which is used as a substrate for growing the laminated structure.
は、前記積層構造体を成長させる際のバッファ層として
利用されたものであることを特徴とする請求項１に記載
の窒化物半導体発光素子。3. The nitride semiconductor light emitting device according to claim 1, wherein the nitride semiconductor layer included in the pedestal electrode is used as a buffer layer when growing the laminated structure. element.
コン層と窒化物半導体層とを含んでいることを特徴とす
る請求項１から３のいずれかの項に記載の窒化物半導体
発光素子。4. The nitride semiconductor light emitting device according to claim 1, wherein the pedestal electrode includes a silicon layer and a nitride semiconductor layer, both of which are conductive.
と非導電性である窒化物半導体層とを含み、前記台座電
極表面または前記パッド電極表面または前記積層構造体
の発光面に透明導電膜を含んでいることを特徴とする請
求項１から４のいずれかの項に記載の窒化物半導体発光
素子。5. The transparent conductive film is formed on the surface of the pedestal electrode, the surface of the pad electrode, or the light emitting surface of the laminated structure, wherein the pedestal electrode includes a conductive silicon layer and a non-conductive nitride semiconductor layer. The nitride semiconductor light emitting device according to claim 1, further comprising:
窒化物半導体層が電流阻止層として機能することを特徴
とする請求項１、２、３または５のいずれかの項に記載
の窒化物半導体発光素子。6. The nitride according to claim 1, wherein the non-conductive nitride semiconductor layer included in the pedestal electrode functions as a current blocking layer. Semiconductor light emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001263361A JP2003078168A (en) | 2001-08-31 | 2001-08-31 | Nitride semiconductor light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001263361A JP2003078168A (en) | 2001-08-31 | 2001-08-31 | Nitride semiconductor light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003078168A true JP2003078168A (en) | 2003-03-14 |
Family
ID=19090128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001263361A Withdrawn JP2003078168A (en) | 2001-08-31 | 2001-08-31 | Nitride semiconductor light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003078168A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006073189A1 (en) * | 2005-01-08 | 2006-07-13 | Kanagawa Academy Of Science And Technology | Functional device and method for forming oxide material |
| CN100364119C (en) * | 2003-07-25 | 2008-01-23 | 夏普株式会社 | Nitride-based compound semiconductor light-emitting device and method of fabricating the same |
| US7968216B2 (en) | 2005-01-08 | 2011-06-28 | Toyoda Gosei Co., Ltd. | Internal gear pump |
-
2001
- 2001-08-31 JP JP2001263361A patent/JP2003078168A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100364119C (en) * | 2003-07-25 | 2008-01-23 | 夏普株式会社 | Nitride-based compound semiconductor light-emitting device and method of fabricating the same |
| WO2006073189A1 (en) * | 2005-01-08 | 2006-07-13 | Kanagawa Academy Of Science And Technology | Functional device and method for forming oxide material |
| US7968216B2 (en) | 2005-01-08 | 2011-06-28 | Toyoda Gosei Co., Ltd. | Internal gear pump |
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