JP2003034897A - Plating apparatus - Google Patents

Plating apparatus

Info

Publication number
JP2003034897A
JP2003034897A JP2001225130A JP2001225130A JP2003034897A JP 2003034897 A JP2003034897 A JP 2003034897A JP 2001225130 A JP2001225130 A JP 2001225130A JP 2001225130 A JP2001225130 A JP 2001225130A JP 2003034897 A JP2003034897 A JP 2003034897A
Authority
JP
Japan
Prior art keywords
plating
tank
resin
solution
storage tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001225130A
Other languages
Japanese (ja)
Other versions
JP4014827B2 (en
Inventor
Katsuji Kawakami
克二 川上
Keiichi Sawai
敬一 澤井
Hajime Oda
肇 小田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2001225130A priority Critical patent/JP4014827B2/en
Priority to PCT/JP2002/007476 priority patent/WO2003010366A1/en
Priority to US10/484,628 priority patent/US20040206622A1/en
Priority to KR1020047000985A priority patent/KR100591706B1/en
Priority to CNB028148916A priority patent/CN1292099C/en
Priority to TW091116592A priority patent/TWI292000B/zh
Publication of JP2003034897A publication Critical patent/JP2003034897A/en
Application granted granted Critical
Publication of JP4014827B2 publication Critical patent/JP4014827B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02—Tanks; Installations therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemically Coating (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To control precipitation of a plating material as a foreign substance, which is precipitated on the wall surface of a plating tank and the like in a plating apparatus during plating. SOLUTION: At least a part of an area in contact with a plating liquid is made from a material having a less changing rate of surface roughness than a resin, when the surface roughness is measured before and after applying a remover in a same condition. For instance, a storage tank 1, a plating treatment tank 2, a buffer tank 3, and a pipe 9, are made of hard glass or quartz glass.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体集積回路等
の製造装置等で用いられるメッキ処理装置に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating processing apparatus used in a semiconductor integrated circuit manufacturing apparatus or the like.

【０００２】[0002]

【従来の技術】携帯情報端末など電子機器の小型軽量化
が進んでいるが、それに呼応して、これらの機器に組み
込まれる半導体集積回路自体にも、小型軽量化、高密度
実装化が求められている。2. Description of the Related Art As electronic devices such as portable information terminals are becoming smaller and lighter, the semiconductor integrated circuits themselves incorporated in these devices are also required to be smaller and lighter and have a higher density. ing.

【０００３】半導体集積回路等（以下、半導体装置と称
する）の小型化、高密度実装化を達成する有力な方法と
して、半導体装置表面の所定の位置に、メッキ技術を利
用して金（Ａｕ）によりいわゆるバンプ電極を形成し、
このバンプ電極を利用して半導体装置を実装基板に直接
実装する方法があり、広く用いられている。As a promising method for achieving miniaturization and high-density mounting of semiconductor integrated circuits and the like (hereinafter referred to as semiconductor devices), gold (Au) is applied to a predetermined position on the surface of the semiconductor device by using a plating technique. To form a so-called bump electrode,
There is a method of directly mounting a semiconductor device on a mounting substrate using this bump electrode, which is widely used.

【０００４】図３に、従来用いられているメッキ処理装
置の概要を示す。FIG. 3 shows an outline of a conventional plating apparatus.

【０００５】図３において、５１はストレージ槽、５２
はメッキ処理槽、５３はバッファー槽、５４は循環ポン
プ、５５はフロートタイプの流量計、５６はフィルタ
ー、５７は熱交換ユニット、５８は配管を表している。
ストレージ槽５１、メッキ処理槽５２、バッファー槽５
３、熱交換ユニット５７、及び配管５８の材料は樹脂系
の材料が用いられている。In FIG. 3, reference numeral 51 is a storage tank, and 52 is a storage tank.
Is a plating tank, 53 is a buffer tank, 54 is a circulation pump, 55 is a float type flow meter, 56 is a filter, 57 is a heat exchange unit, and 58 is a pipe.
Storage tank 51, plating tank 52, buffer tank 5
3, resin-based materials are used as materials for the heat exchange unit 57 and the pipe 58.

【０００６】循環ポンプ５４で加圧されたメッキ液はス
トレージ槽５１に流入する。ストレージ槽５１に注入さ
れたメッキ液は、ストレージ槽５１でその流速を調整さ
れ、所定の流速（液の自重）で次のメッキ処理槽５２に
流入する。次いでメッキ液はメッキ処理槽５２の排出口
からバッファー槽５３へと流入し、再び循環ポンプ５４
にて加速され、ストレージ槽５１へと流入する。The plating liquid pressurized by the circulation pump 54 flows into the storage tank 51. The flow rate of the plating liquid injected into the storage tank 51 is adjusted by the storage tank 51, and the plating liquid flows into the next plating treatment tank 52 at a predetermined flow speed (self-weight of the liquid). Next, the plating solution flows into the buffer tank 53 from the discharge port of the plating processing tank 52, and the circulation pump 54 again.
Is accelerated and flows into the storage tank 51.

【０００７】メッキ液の循環を行う際、循環ポンプのキ
ャビテーションによりメッキ液中に気泡が発生すること
がある。この気泡が基板の表面に付着すると、それが原
因となりメッキ成長が阻害され、最悪の場合にはメッキ
の異常（メッキ厚さの異常やメッキ形状不良）が発生す
る。この気泡を除去するために、例えば、循環ポンプに
て加圧されたメッキ液を一旦ストレージ槽に流入させ、
液中の気泡を大気中に放出させた後、メッキ液の加圧を
行わず、液の自重にてメッキ処理槽５２へ流入させてい
る。When the plating solution is circulated, air bubbles may be generated in the plating solution due to the cavitation of the circulation pump. When the bubbles adhere to the surface of the substrate, the growth of the plating is hindered due to the bubbles, and in the worst case, abnormal plating (abnormal plating thickness or defective plating shape) occurs. In order to remove the bubbles, for example, the plating liquid pressurized by a circulation pump is once introduced into the storage tank,
After the bubbles in the solution are released into the atmosphere, the plating solution is not pressurized but is allowed to flow into the plating treatment tank 52 by its own weight.

【０００８】メッキを行う際、金属の析出速度及び基板
上での析出速度の均一性の制御、つまりメッキ厚さの制
御のためには、メッキ液の流量制御、メッキ液の温度制
御も重要な要素である。During plating, in order to control the deposition rate of the metal and the uniformity of the deposition rate on the substrate, that is, to control the plating thickness, it is important to control the flow rate of the plating solution and the temperature of the plating solution. Is an element.

【０００９】メッキ液の流量の測定には、ストレージ槽
５１からメッキ処理槽５２への配管の途中に、フロート
タイプ流量計５５を設けて、その流量を制御する。メッ
キ液の温度制御は、バッファー槽５３の中に、熱交換ユ
ニット５７（樹脂製の束ねたチューブ内に温水を循環さ
せ間接的に温調（温度調節）する）を浸漬して行ってい
る。To measure the flow rate of the plating solution, a float type flow meter 55 is provided in the middle of the pipe from the storage tank 51 to the plating treatment tank 52 to control the flow rate. The temperature of the plating solution is controlled by immersing the heat exchange unit 57 (in which the hot water is circulated in a bundled tube made of resin to indirectly control the temperature) in the buffer tank 53.

【００１０】メッキを行うと、メッキ液の性質から基板
上の所定の位置以外、例えばメッキ液循環配管、循環ポ
ンプまたはメッキ槽自体などにもメッキ金属が析出する
事がある。これら所定の位置以外に析出した金属の一部
は、析出した場所から剥離してメッキ液中を異物となっ
て浮遊し、メッキ液の流動に従ってメッキ処理装置中を
移動しする。この異物が基板の表面に付着すると、それ
が原因となって、最悪の場合にはメッキの異常（メッキ
厚さの異常や、メッキ形状不良）が発生する。この異物
を除去するために、例えば循環ポンプの後にフィルター
５６を設けている。また、図３に示すごとく、メッキ処
理槽５２の直前にもフィルター５６を設けている。When plating is performed, the plating metal may be deposited on a substrate other than a predetermined position on the substrate, for example, a plating liquid circulation pipe, a circulation pump, or the plating tank itself due to the nature of the plating liquid. A part of the metal deposited at a position other than these predetermined positions is separated from the deposited place and floats as a foreign substance in the plating solution, and moves in the plating apparatus according to the flow of the plating solution. When this foreign substance adheres to the surface of the substrate, it causes the abnormal plating (abnormal plating thickness, defective plating shape) in the worst case. In order to remove this foreign matter, a filter 56 is provided after the circulation pump, for example. Further, as shown in FIG. 3, a filter 56 is also provided immediately before the plating tank 52.

【００１１】メッキ液中に浮遊する異物は、フィルター
を用いて除去するが、メッキ処理槽等の内壁に沈積固着
した析出物はフィルターにて除去できない。これらの析
出物は、配管詰まり・異物数増加等不良を発生させる可
能性が有るため、配管やメッキ処理槽等をハロゲン系薬
液（王水・ヨウ素など）を用いて、定期的に洗浄してい
る。Foreign matters floating in the plating solution are removed by using a filter, but the deposits deposited and fixed on the inner wall of the plating tank cannot be removed by the filter. Since these precipitates may cause defects such as clogging of pipes and increase in the number of foreign substances, regularly clean the pipes and plating tanks with halogen chemicals (aqua regia, iodine, etc.). There is.

【００１２】[0012]

【発明が解決しようとする課題】前述の如く、メッキ液
の性質上、所望の位置以外、例えばメッキ処理槽の内
壁、配管の内壁等メッキ液が接する部分にも金属が析出
する。これらの金属の大半は、メッキ処理槽などの内壁
面に沈積固着するので、ハロゲン系の薬液により、定期
的に洗浄して除去する。As described above, due to the nature of the plating solution, the metal is deposited at a position other than the desired position, such as the inner wall of the plating tank or the inner wall of the pipe, which contacts the plating solution. Since most of these metals are deposited and fixed on the inner wall surface of the plating tank or the like, they are regularly cleaned and removed with a halogen-based chemical solution.

【００１３】従来においては、このように、メッキ処理
で発生する、異物としてのメッキ物質の析出を、容易か
つ効果的に抑制することは困難であるという問題があ
る。Conventionally, as described above, there is a problem that it is difficult to easily and effectively suppress the deposition of a plating substance as a foreign substance, which occurs during the plating process.

【００１４】[0014]

【課題を解決するための手段】上記の課題を解決するた
め、本発明のメッキ処理装置は、メッキ物質を含んだメ
ッキ液を供給して、メッキ対象物をメッキ液に接触させ
ることでメッキ対象物をメッキするとともに、所望でな
い位置にメッキ物質が析出した際には除去剤にてそのメ
ッキ物質を除去するメッキ処理装置において、上記メッ
キ液と触れる部分の少なくとも一部が、上記除去剤を作
用させた場合に同じ条件で測定したときに表面粗さ変化
率が樹脂よりも低い材料で形成されていることを特徴と
している。In order to solve the above-mentioned problems, the plating apparatus of the present invention supplies a plating solution containing a plating substance and brings the object to be plated into contact with the plating solution. In a plating treatment device for plating an object and removing the plating substance with a removing agent when the plating substance is deposited at an undesired position, at least a part of the portion that comes into contact with the plating solution acts as the removing agent. It is characterized by being formed of a material whose surface roughness change rate is lower than that of resin when measured under the same conditions.

【００１５】上記の構成により、メッキ液と触れる部分
の少なくとも一部が、上記除去剤を作用させた場合に同
じ条件で測定したときに表面粗さ変化率が樹脂よりも低
い材料で形成されている。With the above structure, at least a part of the portion that comes into contact with the plating solution is formed of a material having a surface roughness change rate lower than that of the resin when measured under the same conditions when the removing agent is applied. There is.

【００１６】したがって、メッキ処理を行って、所望で
ない位置にメッキ物質が析出した際に、上記除去剤を作
用させたときに、上記のような材料で形成した、上記メ
ッキ液と触れる部分においては、樹脂で形成した場合と
比べて、表面が粗くなりにくい。表面が粗くなりにくい
ので、その分、その粗さでできる凹凸にてメッキ物質の
析出が加速されるのを抑制することができる。Therefore, when the plating substance is deposited on the undesired position after the plating treatment and the removing agent is acted on, the portion formed of the above material and in contact with the plating solution is The surface is less likely to be rough compared to the case where it is formed of resin. Since the surface does not become rough easily, it is possible to suppress the acceleration of the deposition of the plating substance due to the unevenness formed by the roughness.

【００１７】それゆえ、メッキ処理で発生する、異物と
してのメッキ物質の析出を容易かつ効果的に抑制するこ
とができる。Therefore, it is possible to easily and effectively suppress the deposition of the plating substance as a foreign substance, which occurs during the plating process.

【００１８】また、本発明のメッキ処理装置は、上記の
構成に加えて、メッキ対象物をメッキ液に接触させるメ
ッキ処理槽を備え、上記メッキ処理槽の壁面が、上記除
去剤を作用させた場合に同じ条件で測定したときに表面
粗さ変化率が樹脂よりも低い材料で形成されていること
を特徴としている。In addition to the above-mentioned structure, the plating treatment apparatus of the present invention is provided with a plating treatment tank for bringing an object to be plated into contact with the plating liquid, and the wall surface of the plating treatment tank acts on the removing agent. In this case, it is characterized in that it is made of a material having a surface roughness change rate lower than that of resin when measured under the same conditions.

【００１９】上記の構成により、メッキ処理槽の壁面
が、上記除去剤を作用させた場合に同じ条件で測定した
ときに表面粗さ変化率が樹脂よりも低い材料で形成され
ている。それゆえ、上記の構成による効果に加えて、メ
ッキ処理で発生する、異物としてのメッキ物質の析出
を、いっそう容易かつ効果的に抑制することができる。With the above structure, the wall surface of the plating tank is formed of a material having a lower rate of change in surface roughness than that of resin when measured under the same conditions when the removing agent is applied. Therefore, in addition to the effect of the above configuration, it is possible to more easily and effectively suppress the deposition of the plating substance as a foreign substance, which occurs during the plating process.

【００２０】また、本発明のメッキ処理装置は、上記の
構成に加えて、メッキ対象物をメッキ液に接触させるメ
ッキ処理槽と、上記メッキ処理槽にメッキ液を運ぶメッ
キ処理槽用配管とを備え、上記メッキ処理槽用配管の壁
面が、上記除去剤を作用させた場合に同じ条件で測定し
たときに表面粗さ変化率が樹脂よりも低い材料で形成さ
れていることを特徴としている。In addition to the above-mentioned structure, the plating apparatus of the present invention comprises a plating processing tank for bringing an object to be plated into contact with the plating solution, and a plating processing tank pipe for carrying the plating solution to the plating processing tank. It is characterized in that the wall surface of the pipe for the plating treatment tank is formed of a material whose rate of change in surface roughness is lower than that of resin when measured under the same conditions when the removing agent is applied.

【００２１】上記の構成により、メッキ処理槽用配管の
壁面が、上記除去剤を作用させた場合に同じ条件で測定
したときに表面粗さ変化率が樹脂よりも低い材料で形成
されている。それゆえ、上記の構成による効果に加え
て、メッキ処理で発生する、異物としてのメッキ物質の
析出を、いっそう容易かつ効果的に抑制することができ
る。With the above structure, the wall surface of the pipe for the plating treatment tank is formed of a material having a lower rate of change in surface roughness than that of resin when measured under the same conditions when the removing agent is applied. Therefore, in addition to the effect of the above configuration, it is possible to more easily and effectively suppress the deposition of the plating substance as a foreign substance, which occurs during the plating process.

【００２２】また、本発明のメッキ処理装置は、上記の
構成に加えて、メッキ対象物をメッキ液に接触させるメ
ッキ処理槽と、上記メッキ処理槽に入れるメッキ液を貯
蔵するストレージ槽とを備え、上記ストレージ槽の壁面
が、上記除去剤を作用させた場合に同じ条件で測定した
ときに表面粗さ変化率が樹脂よりも低い材料で形成され
ていることを特徴としている。Further, the plating apparatus of the present invention comprises, in addition to the above configuration, a plating tank for bringing an object to be plated into contact with the plating solution, and a storage tank for storing the plating solution to be placed in the plating tank. The wall surface of the storage tank is formed of a material having a surface roughness change rate lower than that of resin when measured under the same conditions when the removing agent is applied.

【００２３】上記の構成により、ストレージ槽の壁面
が、上記除去剤を作用させた場合に同じ条件で測定した
ときに表面粗さ変化率が樹脂よりも低い材料で形成され
ている。それゆえ、上記の構成による効果に加えて、メ
ッキ処理で発生する、異物としてのメッキ物質の析出
を、いっそう容易かつ効果的に抑制することができる。With the above structure, the wall surface of the storage tank is formed of a material whose rate of change in surface roughness is lower than that of resin when measured under the same conditions when the above removing agent is applied. Therefore, in addition to the effect of the above configuration, it is possible to more easily and effectively suppress the deposition of the plating substance as a foreign substance, which occurs during the plating process.

【００２４】また、本発明のメッキ処理装置は、上記の
構成に加えて、中に上記ストレージ槽を入れて、熱伝導
にてストレージ槽内のメッキ液を加熱する加熱槽を備え
たことを特徴としている。Further, the plating apparatus of the present invention comprises, in addition to the above-mentioned constitution, a heating tank for putting the above-mentioned storage tank therein and heating the plating solution in the storage tank by heat conduction. I am trying.

【００２５】上記の構成により、熱伝導にてストレージ
槽内のメッキ液を加熱する。したがって、温度調節のた
めの熱交換ユニットとして、メッキ液に直接触れる部材
を用いる必要がない。それゆえ、上記の構成による効果
に加えて、メッキ処理で発生する、異物としてのメッキ
物質の析出を、いっそう容易かつ効果的に抑制すること
ができる。With the above structure, the plating liquid in the storage tank is heated by heat conduction. Therefore, it is not necessary to use a member that comes into direct contact with the plating solution as a heat exchange unit for adjusting the temperature. Therefore, in addition to the effect of the above configuration, it is possible to more easily and effectively suppress the deposition of the plating substance as a foreign substance, which occurs during the plating process.

【００２６】また、本発明のメッキ処理装置は、上記の
構成に加えて、メッキ対象物をメッキ液に接触させるメ
ッキ処理槽と、上記メッキ処理槽にメッキ液を運ぶメッ
キ処理槽用配管とを備え、上記メッキ処理槽用配管の一
部に、超音波式流量計が配置されており、上記メッキ処
理槽用配管のうち、上記超音波式流量計が配置されてい
る部位の壁面が、上記除去剤を作用させた場合に同じ条
件で測定したときに表面粗さ変化率が樹脂よりも低い材
料で形成されていることを特徴としている。In addition to the above configuration, the plating treatment apparatus of the present invention comprises a plating treatment tank for bringing an object to be plated into contact with the plating solution, and a plating treatment tank pipe for carrying the plating solution to the plating treatment tank. An ultrasonic flowmeter is arranged in a part of the plating tank piping, and the wall surface of the plating tank piping where the ultrasonic flowmeter is arranged is It is characterized in that it is formed of a material having a lower rate of change in surface roughness than that of resin when measured under the same conditions when a removing agent is applied.

【００２７】上記の構成により、上記メッキ処理槽用配
管のうち、上記超音波式流量計が配置されている部位の
壁面が、上記除去剤を作用させた場合に同じ条件で測定
したときに表面粗さ変化率が樹脂よりも低い材料で形成
されている。上記超音波式流量計は、メッキ液に接触し
ない位置に配置されており、そこから超音波信号を、上
記メッキ処理槽用配管内を通るメッキ液に当て、メッキ
液から反射された信号に基づいてメッキ液の流量を測定
することができる。それゆえ、上記の構成による効果に
加えて、メッキ処理で発生する、異物としてのメッキ物
質の析出を、いっそう容易かつ効果的に抑制することが
できる。With the above structure, the wall surface of the portion of the pipe for the plating treatment tank in which the ultrasonic type flow meter is arranged is the surface when measured under the same conditions when the removing agent is applied. It is formed of a material having a roughness change rate lower than that of resin. The ultrasonic flowmeter is arranged at a position where it does not come into contact with the plating solution, from which an ultrasonic signal is applied to the plating solution passing through the pipe for the plating treatment tank, and based on the signal reflected from the plating solution. The flow rate of the plating solution can be measured. Therefore, in addition to the effect of the above configuration, it is possible to more easily and effectively suppress the deposition of the plating substance as a foreign substance, which occurs during the plating process.

【００２８】[0028]

【発明の実施の形態】本発明の実施の一形態について図
１および図２に基づいて説明すれば、以下の通りであ
る。BEST MODE FOR CARRYING OUT THE INVENTION The following will describe one embodiment of the present invention in reference to FIG. 1 and FIG.

【００２９】従来、メッキ処理装置は、メッキ処理槽は
じめ配管に至るまで樹脂系材料を用いて作られていた。Conventionally, the plating apparatus has been made of resin materials from the plating tank to the piping.

【００３０】これらの樹脂は、ハロゲン系の薬液（除去
剤）で洗浄を繰り返すと、その表面の粗さが増加するこ
とがわかった。その結果を図２に示す。It has been found that the surface roughness of these resins increases when they are repeatedly washed with a halogen-based chemical solution (removing agent). The result is shown in FIG.

【００３１】メッキ処理槽やストレージ槽に用いられる
ＰＶＤＦ樹脂（Poly vinylidene fluoride）や、ＰＦＡ
樹脂（Tetrafluoroethylene PerFluoroAlkylvinylether
copolymer）では、表面の粗さ（Ｒａ：中心線平均粗
さ）は、ヨウ素溶液に浸漬すると、常温、１週間でその
粗さが初期値に比べて７０％〜１５８％も増大する。PVDF resin (Poly vinylidene fluoride) used in plating tanks and storage tanks, and PFA
Resin (Tetrafluoroethylene PerFluoroAlkylvinylether
The surface roughness (Ra: center line average roughness) of the copolymer) increases by 70% to 158% as compared with the initial value at room temperature for one week when immersed in an iodine solution.

【００３２】この表面の粗さの変化（表面の粗さの増
加）に伴い、表面に形成される凹凸の活性度が変化し、
それが核になって、メッキ物質である金属の析出が加速
されると考えられる。With the change in the surface roughness (increase in the surface roughness), the activity of the unevenness formed on the surface changes,
It is considered that this becomes a nucleus to accelerate the deposition of the metal that is the plating substance.

【００３３】それに対して、図２に併記する硬質ガラス
及び石英ガラス（以下、ガラスと称す。）の場合には、
同じヨウ素溶液に浸漬しても、その表面の粗さの変化
は、０％〜１０％と非常に少ない。基板上の所定の位置
（メッキ対象物のメッキ対象部位）以外への金属の析出
を完全に防ぐことは不可能であり、ハロゲン系の薬液に
よる定期的な洗浄は不可避であるので、ハロゲン系の薬
液による洗浄を繰り返しても、メッキ処理装置の内壁面
（メッキ液と接する面）を荒さない材料を用いる必要が
ある。On the other hand, in the case of hard glass and quartz glass (hereinafter referred to as glass), which are also shown in FIG.
Even when immersed in the same iodine solution, the change in the surface roughness is very small, 0% to 10%. It is impossible to completely prevent the deposition of metal on other than the predetermined position on the substrate (the part to be plated of the object to be plated), and periodic cleaning with a halogen-based chemical solution is unavoidable. It is necessary to use a material that does not roughen the inner wall surface of the plating apparatus (the surface in contact with the plating solution) even if the cleaning with the chemical solution is repeated.

【００３４】メッキの厚さは、メッキを行う基板上では
均一である必要があるが、そのためには、前述の通りメ
ッキ液の流量制御、メッキ液の温度制御も重要な要素で
ある。The thickness of the plating needs to be uniform on the substrate to be plated. For that purpose, the flow rate control of the plating solution and the temperature control of the plating solution are also important factors as described above.

【００３５】流量の測定には、従来はフロートタイプの
流量計を用いている。このタイプの流量計はフロート
（浮き）を流量により浮かして数値化しているため、フ
ロート自体が液流れを阻害する要因となっている。また
流量計を取り付けけるための配管の引き回しが複雑であ
り、そのためにメッキ液と配管との接液面積（液体と接
触する面積）が増大し、流量計の内部や配管の屈曲部な
どに金属が析出しやすく、フロート自体にも析出がおこ
るため、使用時間と共に累積した析出物により、安定し
て正確な流量の測定が出来なくなる可能性がある。Conventionally, a float type flow meter is used to measure the flow rate. In this type of flow meter, the float (float) is floated according to the flow rate and is quantified, so the float itself is a factor that hinders the liquid flow. In addition, the arrangement of the piping for mounting the flow meter is complicated, which increases the liquid contact area between the plating liquid and the piping (area in contact with the liquid), and the metal inside the flow meter or in the bent part of the piping. Is likely to be deposited, and the float itself is also deposited. Therefore, it is possible that stable and accurate measurement of the flow rate cannot be performed due to deposits accumulated with the use time.

【００３６】薬液の流量を測定する方法としては、液と
非接触でも可能な超音波を用いる方法がある。配管内の
流体に超音波信号をあて、その伝達信号を読み取り、流
速・流量を正確に測定するものである。しかし、樹脂製
の配管では配管の内壁面が荒れてきて、そこに金属が析
出するため、伝達信号が正確に送受信できなくなり、メ
ッキ処理装置では使用できない。As a method of measuring the flow rate of the chemical solution, there is a method of using ultrasonic waves which can be brought into non-contact with the solution. An ultrasonic signal is applied to the fluid in the pipe, the transmission signal is read, and the flow velocity / flow rate is accurately measured. However, in the case of resin piping, the inner wall surface of the piping becomes rough and metal is deposited on it, so that transmission signals cannot be transmitted and received accurately, and the plating processing apparatus cannot be used.

【００３７】メッキ液の温度制御は、前記のバッファー
槽にて、樹脂製チューブを束ねた熱交換ユニットを用い
ているが、樹脂は熱伝導率が悪く、所望の熱交換を行う
には接液面積を大きくする必要がある。したがって熱交
換器の構造とも相俟って、メッキ物質である金属が析出
しやすい。The temperature of the plating solution is controlled by using a heat exchange unit in which resin tubes are bundled in the above-mentioned buffer tank. However, the resin has poor thermal conductivity and the liquid contact is required to perform the desired heat exchange. It is necessary to increase the area. Therefore, in combination with the structure of the heat exchanger, the metal that is the plating substance is likely to deposit.

【００３８】メッキ液の温度制御は、メッキ処理槽の直
前にて行うのが望ましいが、従来のメッキ処理装置にお
いては、樹脂製の熱交換ユニットを用いているため金属
が析出しやすい。そのために温度制御はバッファー槽で
行い、循環ポンプで加圧してフィルターを通し、ストレ
ージ槽へメッキ液を注入している。その結果配管が長く
なり、温度降下が発生し正確な温度制御を難しくしてい
る。また接液面積の増加に伴う、更なる金属の析出を招
くことにもなる。It is desirable to control the temperature of the plating solution immediately before the plating tank. However, in the conventional plating apparatus, since a heat exchange unit made of resin is used, metal is likely to deposit. Therefore, the temperature is controlled in a buffer tank, pressurized by a circulation pump, passed through a filter, and the plating solution is injected into the storage tank. As a result, the piping becomes long and a temperature drop occurs, making accurate temperature control difficult. In addition, further deposition of metal will be caused as the area in contact with liquid increases.

【００３９】また、従来のメッキ処理装置では、図３に
示すメッキ処理槽５２の直前にもフィルター５６を設け
ている。これは、ストレージ槽５１や流量計５５及びス
トレージ槽５１からメッキ処理槽５２までの配管中に析
出する金属異物を除去するために設けている。フィルタ
ーにより異物を除去するためには、薬液に所定の圧力を
加える必要があるが、ストレージ槽５１とメッキ処理槽
５２の間にはキャビテーション防止のため、加圧用のポ
ンプを設置することはできず、薬液の落差（自重）で加
圧する必要がある。所望の圧力を得るためには、ストレ
ージ槽５１を相応の高さに設置し、フィルターの目詰ま
りの状況（流量低下）によりフィルター交換をする必要
がある。このため、メンテナンス時間及び費用の増大と
なる可能性がある。Further, in the conventional plating apparatus, the filter 56 is provided immediately before the plating tank 52 shown in FIG. This is provided in order to remove the metallic foreign matter deposited in the storage tank 51, the flow meter 55, and the pipe from the storage tank 51 to the plating treatment tank 52. In order to remove foreign substances with a filter, it is necessary to apply a predetermined pressure to the chemical solution, but it is not possible to install a pressure pump between the storage tank 51 and the plating treatment tank 52 to prevent cavitation. , It is necessary to pressurize by the drop (self-weight) of the drug solution. In order to obtain the desired pressure, it is necessary to install the storage tank 51 at an appropriate height and replace the filter depending on the condition of clogging of the filter (flow rate decrease). Therefore, maintenance time and cost may increase.

【００４０】基板上の所定の位置（メッキ対象物のメッ
キ対象部位）以外への金等の金属（メッキ物質）の析出
を防ぐためには、メッキ処理装置のメッキ液と接触する
部分の接液面積を最小限に抑え、また、ハロゲン系の薬
液等、洗浄剤による定期的な洗浄を行っても内壁面の粗
さが変化しない材料にてメッキ処理装置を作成すること
が効果的であることが分かった。これによれば、メッキ
処理装置の異物の発生を大幅に抑制でき、異物除去のた
めに従来必要であったフィルターの数を削減でき、この
交換に係るメンテナンス時間及び費用の発生を抑えるこ
とが可能となる。In order to prevent the deposition of a metal (plating substance) such as gold on a portion other than a predetermined position (a target plating target portion of a plating target) on the substrate, the liquid contact area of a portion of the plating processing apparatus that contacts the plating liquid. In addition, it is effective to create a plating treatment device with a material that does not change the roughness of the inner wall surface even if it is regularly cleaned with a cleaning agent such as a halogen-based chemical solution. Do you get it. According to this, it is possible to significantly suppress the generation of foreign matter in the plating processing apparatus, reduce the number of filters conventionally required to remove the foreign matter, and reduce the maintenance time and cost associated with this replacement. Becomes

【００４１】半導体集積回路への金（Ａｕ）によるバン
プ電極を形成する工程の概要は後述するが、既に述べた
通り、配管やメッキ処理槽等をハロゲン系薬液（王水・
ヨウ素など）を用いて、定期的に洗浄する必要がある。The outline of the process for forming bump electrodes of gold (Au) on a semiconductor integrated circuit will be described later.
It is necessary to wash regularly with (such as iodine).

【００４２】既に説明したが、図２には、ハロゲン系薬
液を用いて洗浄した場合の、メッキ処理装置に用いられ
る樹脂系材料とガラス系材料の表面粗さの変化率を示し
てあり、洗浄前の表面の粗さ（初期値）は、樹脂系の材
料もガラス系の材料も、配管内表面粗さには、有意差は
見られないが、１週間薬液（ヨウ素）に浸液させておく
と、樹脂系材料の表面粗さは、初期値に対して、変化率
７０〜１５８％と非常に大きく変化している。一方ガラ
ス系材料の場合は、変化率は０〜１０％と格段に小さい
ことが分かる。この表面粗さ変化率は小さいほど望まし
い。As described above, FIG. 2 shows the rate of change in the surface roughness of the resin-based material and the glass-based material used in the plating apparatus when cleaning is performed using a halogen-based chemical solution. Regarding the surface roughness (initial value) of the previous surface, there is no significant difference in the surface roughness inside the pipe, whether it is a resin-based material or a glass-based material. In this case, the surface roughness of the resin-based material greatly changes from the initial value at a rate of change of 70 to 158%. On the other hand, in the case of a glass-based material, the change rate is 0 to 10%, which is significantly small. The smaller the surface roughness change rate, the more desirable.

【００４３】表面粗さ変化率が高いこと、すなわち内壁
の凹凸が増加すると、それを核として各槽や配管の内壁
へ金属が析出しやすくなってくるため、薬液で洗浄する
たびに、あるいは数回の洗浄ごとに、各槽や配管を交換
する必要がある。When the rate of change in surface roughness is high, that is, when the unevenness of the inner wall is increased, metal tends to be deposited on the inner wall of each tank or pipe by using it as a core, and therefore, each time washing with a chemical solution or several times It is necessary to replace each tank and piping after each cleaning.

【００４４】本実施の形態においては、ハロゲン系の薬
液による洗浄を繰り返しても、その内壁面の荒れが生じ
ない、あるいは極力少ない材料としてガラスを用いてメ
ッキ処理装置の各部を構成する。このために、内壁面に
析出する金属を抑えることができる。In the present embodiment, each part of the plating processing apparatus is configured by using glass as a material whose inner wall surface does not become rough even if cleaning with a halogen-based chemical solution is repeated, or which is as small as possible. Therefore, the metal deposited on the inner wall surface can be suppressed.

【００４５】ガラスは樹脂より熱伝導率が高いので、ス
トレージ槽をガラスで構成し、ストレージ槽を加熱槽に
浸漬することで、メッキ液の温度制御を行う。その結
果、熱交換ユニットが不要となり、メッキ液との接液面
積を大幅に減少させるとともに、メッキ液の温度制御
を、よりメッキ処理槽に近い場所にて行うことが可能と
なり、処理温度の安定化を図ることができる。Since glass has a higher thermal conductivity than resin, the temperature of the plating solution is controlled by forming the storage tank with glass and immersing the storage tank in the heating tank. As a result, a heat exchange unit is not required, the area in contact with the plating solution can be greatly reduced, and the temperature of the plating solution can be controlled in a place closer to the plating processing tank, thus stabilizing the processing temperature. Can be realized.

【００４６】ストレージ槽とメッキ処理槽、及びその間
の配管をすべてガラス系材料にすることにより、その間
への金属の析出を防止することができるため、ストレー
ジ槽とメッキ処理槽との間にフィルターは不用であり、
定期フィルター交換等のメンテナンス費用・メンテナン
ス時間の削減が可能となる。さらにストレージ槽とメッ
キ処理槽との落差は、メッキ液が流動するに必要な落差
を設ければ良く、メッキ処理装置をコンパクトにするこ
とができる。Since the storage tank and the plating tank and the pipes between them are all made of a glass-based material, it is possible to prevent the deposition of metal between them. Therefore, a filter is not installed between the storage tank and the plating tank. Useless,
It is possible to reduce maintenance costs and maintenance time such as regular filter replacement. Further, the difference between the storage tank and the plating treatment tank may be a difference required for the plating solution to flow, and the plating treatment apparatus can be made compact.

【００４７】また、配管もガラスに変更することによ
り、配管の内壁面への金属の析出が抑えられることによ
り、液と非接触にて流量が測定できる超音波流量計を導
入でき、配管を単純な構造にすることも可能となる。Further, by changing the pipe to glass, the deposition of metal on the inner wall surface of the pipe can be suppressed, so that an ultrasonic flow meter capable of measuring the flow rate without contact with the liquid can be introduced, and the pipe can be simplified. It is also possible to have a different structure.

【００４８】以下に、半導体集積回路の製造工程で用い
るメッキ処理装置について、本発明の実施の形態を図面
を用いて詳細に説明する。Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings regarding a plating apparatus used in a manufacturing process of a semiconductor integrated circuit.

【００４９】なお以下の説明で用いる薬液等は、通常の
半導体集積回路の製造に用いられている薬液や使用条件
と基本的には同じであり、特段の場合を除いてその詳細
な記述は省略する。The chemicals and the like used in the following description are basically the same as the chemicals and the usage conditions used in the manufacture of ordinary semiconductor integrated circuits, and the detailed description thereof is omitted except for special cases. To do.

【００５０】まず、本実施の形態に係るメッキ処理装置
を用いた半導体集積回路の製造方法、即ち、半導体基板
上への金（Ａｕ）メッキによるバンプ電極形成工程につ
いて説明する。First, a method for manufacturing a semiconductor integrated circuit using the plating apparatus according to this embodiment, that is, a bump electrode forming step by gold (Au) plating on a semiconductor substrate will be described.

【００５１】本実施の形態において被メッキ基板（メッ
キ対象物）として用いられる上記半導体基板は、複数個
の半導体集積回路を組み込んでなるものであり、以下の
工程により作成される。The semiconductor substrate used as a substrate to be plated (object to be plated) in the present embodiment incorporates a plurality of semiconductor integrated circuits, and is produced by the following steps.

【００５２】半導体集積回路を組み込んだ半導体基板、
例えば直径８インチ（約２００ｍｍ）のシリコンウエハ
の表面全面に、ＳｉＯ2 等の絶縁膜を所定の厚さに堆積
し、フォトリソグラフ技術および絶縁膜エッチング技術
を用いて、該絶縁膜の所定の位置を開口する。A semiconductor substrate incorporating a semiconductor integrated circuit,
For example, an insulating film such as SiO 2 is deposited to a predetermined thickness on the entire surface of a silicon wafer having a diameter of 8 inches (about 200 mm), and the predetermined position of the insulating film is deposited by using photolithography technology and insulating film etching technology. To open.

【００５３】次いで、ウエハ全面に、例えばＡｌ−Ｓｉ
等の金属薄膜を約１μｍの厚さに堆積し、フォトリソグ
ラフ技術および金属薄膜エッチング技術を用いて出入力
用端子であるパッド電極を形成する。ここで、パッド電
極の大きさは、約６０μｍ×１１０μｍとした。また、
この際にウエハ表面に組み込まれたトランジスタ等の素
子の相互配線なども同時に形成されるものとする。Then, for example, Al--Si is formed on the entire surface of the wafer.
A metal thin film such as is deposited to a thickness of about 1 μm, and a pad electrode which is an input / output terminal is formed by using a photolithography technique and a metal thin film etching technique. Here, the size of the pad electrode was about 60 μm × 110 μm. Also,
At this time, interconnections of elements such as transistors incorporated on the surface of the wafer are also formed at the same time.

【００５４】次いで、ウエハ全面に、表面保護膜とし
て、例えばＳｉＮ膜等の絶縁膜を約０．６μｍの厚さに
堆積し、フォトリソグラフ技術および絶縁膜エッチング
技術等、公知の方法で表面保護膜の所定の位置を開口
し、パッド電極を露出させる。表面保護膜の開口部の大
きさは、例えば約３０μｍ×８０μｍとする。Then, an insulating film such as a SiN film is deposited to a thickness of about 0.6 μm as a surface protective film on the entire surface of the wafer, and the surface protective film is formed by a known method such as a photolithography technique and an insulating film etching technique. A predetermined position is opened to expose the pad electrode. The size of the opening of the surface protective film is, eg, about 30 μm × 80 μm.

【００５５】その後、バリアメタルとして、例えばＴｉ
Ｗを約０．２μｍ、Ａｕを２μｍ堆積させ、次いで、フ
ォトレジストを用いてメッキ用のマスクを形成する。こ
のマスクを利用して、公知のメッキ技術により、パッド
電極の上方に厚さ約１８μｍの金（Ａｕ）を析出させ、
バンプ電極を形成する。バンプ電極の大きさは、例えば
上記のように約３０μｍ×８０μｍである。より詳細に
は、以下の通りである。Thereafter, for example, Ti is used as a barrier metal.
About 0.2 μm of W and 2 μm of Au are deposited, and then a photoresist is used to form a mask for plating. Using this mask, a known plating technique is used to deposit gold (Au) having a thickness of about 18 μm above the pad electrode.
Form bump electrodes. The size of the bump electrode is, for example, about 30 μm × 80 μm as described above. The details are as follows.

【００５６】すなわち、ウエハ全面に、金属薄膜を所定
の厚さに堆積する。この金属薄膜は、バンプ電極となる
Ａｕと、パッド電極の材料であるＡｌ、またはＡｌ合金
との反応を阻止すると共に、電解メッキを行う際のいわ
ゆるカレントフィルムの役割を果たすもので、下地金属
とも称される。なお、この下地金属は、単層の金属薄膜
でもかまわないが、前記のようなＡｕとＡｌまたはＡｌ
合金との反応阻止性や、あるいはその他の観点から、通
常は複数の金属の積層膜が用いられている。下地金属と
しては、下層にＴｉＷを約０．２μｍ、その上層にＡｕ
を０．２μｍ堆積させた。That is, a metal thin film is deposited to a predetermined thickness on the entire surface of the wafer. This metal thin film not only prevents the reaction of Au serving as the bump electrode with Al or the Al alloy which is the material of the pad electrode, but also plays the role of a so-called current film when performing electrolytic plating. Is called. The base metal may be a single-layer metal thin film, but Au and Al or Al as described above may be used.
A laminated film of a plurality of metals is usually used from the viewpoint of preventing reaction with an alloy or from other viewpoints. As a base metal, TiW is about 0.2 μm in the lower layer and Au is in the upper layer.
Of 0.2 μm was deposited.

【００５７】次いで、ウエハ全面にフォトレジストを塗
布し、フォトリソグラフ技術を用いて、ウエハ上の所定
の位置、すなわち表面保護膜の開口部上方のフォトレジ
ストを除去する。Next, a photoresist is applied to the entire surface of the wafer, and the photolithography technique is used to remove the photoresist at a predetermined position on the wafer, that is, above the opening of the surface protective film.

【００５８】以上の工程により、次段のメッキ工程にお
いて被メッキ基板となる半導体基板４が形成される。な
お、ウエハ上に残ったフォトレジストはメッキ工程での
マスクの役目を果たし、メッキ金属はフォトレジストの
開口部に析出する。Through the above steps, the semiconductor substrate 4 to be the substrate to be plated is formed in the subsequent plating step. The photoresist remaining on the wafer serves as a mask in the plating process, and the plated metal is deposited in the photoresist opening.

【００５９】さらに、上記半導体基板に対して、Ａｕメ
ッキによってバンプ電極を形成するメッキ工程について
説明する。本実施の形態にかかるメッキ処理装置は、こ
のメッキ工程を行なう装置である。Further, a plating process for forming bump electrodes on the semiconductor substrate by Au plating will be described. The plating apparatus according to this embodiment is an apparatus that performs this plating step.

【００６０】まず、上記半導体基板のウエハ上に堆積さ
せた下地金属の所定位置にメッキ処理装置の陰極電極を
接続する。そして、上記半導体基板と図示しない陽極電
極とを略平行に対向させ、メッキ処理槽２に充填してあ
るメッキ液中に浸漬させる。半導体基板と陽極電極との
間に電源によって所定の電圧を印加し、電解メッキ法に
よりメッキ金属を半導体基板の所定の位置、すなわち、
フォトレジストの開口部に析出させる。First, the cathode electrode of the plating apparatus is connected to a predetermined position of the base metal deposited on the semiconductor substrate wafer. Then, the semiconductor substrate and an anode electrode (not shown) are opposed to each other substantially in parallel, and immersed in the plating solution filled in the plating tank 2. A predetermined voltage is applied between the semiconductor substrate and the anode electrode by a power source, and the plating metal is applied at a predetermined position on the semiconductor substrate by electrolytic plating, that is,
Precipitate in the photoresist openings.

【００６１】半導体基板と陽極電極との間に印加する電
圧は、半導体基板の大きさやメッキ速度などから適宜設
定すれば良い。The voltage applied between the semiconductor substrate and the anode electrode may be appropriately set depending on the size of the semiconductor substrate, the plating rate, and the like.

【００６２】上記メッキ工程によるバンプ電極の形成が
終了した半導体基板においては、フォトレジストが除去
され、さらに、該バンプ電極自体をマスクとして不要な
部分の下地金属が除去される。その後に所定の工程を経
て半導体集積回路が完成する。In the semiconductor substrate on which the bump electrodes have been formed by the plating process, the photoresist is removed, and the unnecessary underlying metal is removed using the bump electrodes themselves as a mask. After that, a semiconductor integrated circuit is completed through a predetermined process.

【００６３】次に、本実施の形態に係るメッキ処理装置
の詳細を説明する。Next, the details of the plating apparatus according to this embodiment will be described.

【００６４】図１は、本実施の形態にかかるメッキ処理
装置の構成を示す概要図である。FIG. 1 is a schematic diagram showing the structure of the plating apparatus according to this embodiment.

【００６５】図１において、１はストレージ槽、２はメ
ッキ処理槽、３はバッファー槽、４は循環ポンプ、６は
フィルター、８は配管（樹脂配管）、９は配管（ガラス
配管）、１０は加熱槽、１１は超音波式の流量計（液非
接触（非接液）タイプ）をそれぞれ表している。In FIG. 1, 1 is a storage tank, 2 is a plating tank, 3 is a buffer tank, 4 is a circulation pump, 6 is a filter, 8 is a pipe (resin pipe), 9 is a pipe (glass pipe), and 10 is a pipe. The heating tank 11 is an ultrasonic flow meter (liquid non-contact (non-liquid contact) type).

【００６６】各槽の大きさについては、ストレージ槽１
は、約４００ｍｍ（縦）×１００ｍｍ（横）×３００ｍ
ｍ（高）、メッキ処理槽２は、約３００ｍｍ×１００ｍ
ｍ×３００ｍｍ、バッファー槽３は、約７００ｍｍ×５
００ｍｍ×２００ｍｍのものを用いた。また、加熱槽１
０は、ストレージ槽１が入るのに十分な底面積と高さが
あれば良い。Regarding the size of each tank, the storage tank 1
Is about 400 mm (length) x 100 mm (width) x 300 m
m (high), plating tank 2 is about 300 mm x 100 m
m × 300 mm, buffer tank 3 is about 700 mm × 5
The one having a size of 00 mm × 200 mm was used. Also, heating tank 1
0 is sufficient if it has a bottom area and a height that are large enough to accommodate the storage tank 1.

【００６７】図１に示す本実施の形態に係るメッキ処理
装置においては、ストレージ槽１、メッキ処理槽２、及
びバッファー槽３は、ガラス、即ち硬質ガラスまたは石
英ガラスで作られており、かつ、フィルター６からスト
レージ槽１への配管９、ストレージ槽１からメッキ処理
槽２への配管（メッキ処理槽用配管）９もガラスで作ら
れている。In the plating processing apparatus according to this embodiment shown in FIG. 1, the storage tank 1, the plating processing tank 2, and the buffer tank 3 are made of glass, that is, hard glass or quartz glass, and The pipe 9 from the filter 6 to the storage tank 1 and the pipe 9 from the storage tank 1 to the plating tank 2 (plating tank piping) 9 are also made of glass.

【００６８】フィルター６からメッキ処理槽２まではガ
ラスで作られているため、この間の槽及び配管の内壁面
への金属の析出は極微量である。Since the area from the filter 6 to the plating tank 2 is made of glass, the amount of metal deposited on the inner wall surface of the tank and piping during this period is extremely small.

【００６９】メッキ処理槽２以降フィルター６までの間
は、樹脂製の配管を用いている。樹脂製配管を用いてい
るために、配管の内壁には金属が析出しやすいが、この
間に析出した金属異物はフィルター６を設けることによ
り、ストレージ槽１への流入を阻止することができる。A resin pipe is used between the plating tank 2 and the filter 6 and thereafter. Since the resin pipe is used, metal is likely to be deposited on the inner wall of the pipe. However, the metal foreign substance deposited during this period can be prevented from flowing into the storage tank 1 by providing the filter 6.

【００７０】バッファー槽３を樹脂製としても構わない
が、メッキ液との接液面積が増大するので金属の析出量
も増加し、フィルター６の目詰まりを早めることにな
る。したがって、バッファー槽３もガラス製とすること
が望ましい。The buffer tank 3 may be made of resin, but since the area in contact with the plating solution increases, the amount of metal deposited also increases and the clogging of the filter 6 is accelerated. Therefore, it is desirable that the buffer tank 3 also be made of glass.

【００７１】ストレージ槽１からメッキ処理槽２への配
管９をガラスとすることにより、その内壁面に析出する
金属は微量であり、従って超音波を利用した流量計が使
用できる。従来のフロートタイプの流量計の場合とは異
なり、この間の配管は非常に単純であり、ガラスを使用
することと相俟って、この間での金属の析出はほとんど
なく、その結果、従来のメッキ処理装置で必要であった
メッキ処理槽直前のフィルターを省くことができる。本
実施の形態に係るメッキ処理装置では、従来技術にかか
る装置より、フィルターの数を約５分の１に削減するこ
とが出来、メッキ処理装置のメンテナンスに必要な費用
及び時間の削減が可能となるのに加えて、メッキ処理装
置のコンパクト化にも寄与できる。When the pipe 9 from the storage tank 1 to the plating tank 2 is made of glass, the amount of metal deposited on the inner wall surface is very small, and therefore a flow meter utilizing ultrasonic waves can be used. Unlike conventional float type flowmeters, the piping between them is very simple and, in combination with the use of glass, there is almost no metal deposition during this time, resulting in conventional plating. It is possible to omit the filter immediately before the plating tank, which is required in the processing equipment. In the plating processing apparatus according to the present embodiment, the number of filters can be reduced to about one-fifth as compared with the apparatus according to the conventional technique, and the cost and time required for maintenance of the plating processing apparatus can be reduced. In addition to that, it can also contribute to downsizing of the plating apparatus.

【００７２】また、従来のメッキ処理装置では、樹脂系
材料の配管を使用しているため、配管内面の表面粗さ増
加により内壁への析出物が増加し、超音波等を用いた非
接触による流量計では安定した数値が得られなかった
が、本実施の形態においては、ガラス系材料の配管に変
更することにより配管内への析出が抑えられ、非接触流
量計（超音波）においても安定して計測が可能となっ
た。また、非接触流量計（超音波）にすることにより、
これまでのフロート等の配管内抵抗物が排除でき、より
安定した流量を得られるようになった。Further, in the conventional plating apparatus, since the pipe made of the resin material is used, the surface roughness of the inner surface of the pipe is increased, so that the deposits on the inner wall are increased. Although a stable value could not be obtained with the flowmeter, in the present embodiment, by changing to a glass-based material pipe, precipitation in the pipe is suppressed, and it is stable even with a non-contact flowmeter (ultrasonic wave). Then it became possible to measure. Also, by using a non-contact flow meter (ultrasonic),
It has become possible to eliminate the conventional resistances in the piping such as floats and obtain a more stable flow rate.

【００７３】樹脂系材料、例えばポリプロピレンの熱伝
導率は４．２〜４．５×１０-4（cal/cm・sec ・℃）で
あるのに対して、ガラス系材料、例えば硬質ガラスの熱
伝導率は２６．０〜３０．０×１０-4（cal/cm・sec ・
℃）と、樹脂より一桁大きい。The thermal conductivity of resin materials such as polypropylene is 4.2 to 4.5 × 10 −4 (cal / cm · sec · ° C.), while the thermal conductivity of glass materials such as hard glass is high. Conductivity is 26.0-30.0 × 10 -4 (cal / cm ・ sec ・
℃), an order of magnitude larger than the resin.

【００７４】そのため、メッキ液の温度制御を行うため
の熱交換ユニットをガラス製にすると、樹脂製の場合に
比べはるかに小型とすることができる。更に、熱交換ユ
ニットの小型化と相俟って金属の析出を抑えることが可
能となり、従来のメッキ処理装置ではバッファー槽でし
か出来なかったメッキ液の温度制御をストレージ槽で行
うことができる。この結果、よりメッキ処理槽に近い場
所でのメッキ液の正確な温度制御が可能となる。Therefore, if the heat exchange unit for controlling the temperature of the plating solution is made of glass, it can be made much smaller than that made of resin. Further, in combination with the miniaturization of the heat exchange unit, metal deposition can be suppressed, and the temperature of the plating solution can be controlled in the storage tank, which was possible only in the buffer tank in the conventional plating apparatus. As a result, it is possible to accurately control the temperature of the plating solution in a place closer to the plating tank.

【００７５】熱交換ユニットとしては、通常用いられる
ような細いチューブを束ねたハニカム形状のものを、ス
トレージ槽１のメッキ液に浸漬させても良いが、本実施
の形態では、ストレージ槽１がガラス製でありその熱伝
導率が良いことを利用して、例えば図１に例示するよう
に、ストレージ槽１を、別途設けた加熱槽１０の中に直
接挿入しても、所望の温度制御は可能である。この場合
には、特段の熱交換ユニットをメッキ液中には浸漬しな
いので、金属の析出を更に抑制することができる。加熱
槽１０の中には例えば温水を入れておき、この温水に
て、熱伝導によってストレージ槽１内のメッキ液を温め
る。As the heat exchange unit, a honeycomb type bundle of thin tubes, which is usually used, may be immersed in the plating solution in the storage tank 1. However, in the present embodiment, the storage tank 1 is made of glass. Utilizing the fact that it is manufactured and its thermal conductivity is good, the desired temperature control is possible even if the storage tank 1 is directly inserted into the separately provided heating tank 10 as illustrated in FIG. 1, for example. Is. In this case, since the special heat exchange unit is not immersed in the plating solution, metal precipitation can be further suppressed. Hot water, for example, is put in the heating tank 10, and the plating solution in the storage tank 1 is warmed by heat conduction with the hot water.

【００７６】以上では、メッキ処理槽２からバッファー
槽３への配管、及びバッファー槽３から循環ポンプ４を
経てフィルター６までの配管は、樹脂製の配管を使用し
た例を説明した。この間の配管もガラス製にすることに
は、金属の析出を抑制する点からは特段の問題は無い。
しかしポンプ近傍の配管は、ポンプの振動等によるガラ
ス破損等も考えられるため、ガラス系材料への変更は特
別な配慮が必要である。In the above description, the pipes from the plating tank 2 to the buffer tank 3 and the piping from the buffer tank 3 to the circulation pump 4 to the filter 6 are made of resin. There is no particular problem in terms of suppressing the precipitation of metal when the pipes in this period are also made of glass.
However, the piping near the pump may be damaged by glass due to vibration of the pump, etc. Therefore, special consideration must be given to changing to a glass-based material.

【００７７】そのほかの部位の配管・各槽の材質をガラ
ス系材料に変更することにより、メッキ液の総接液面積
の約９０％に相当する部分をガラス系材料にすることが
可能となり、その結果、半導体装置表面の所定の位置
（メッキ対象物のメッキ対象部位）以外への析出を抑え
ることが可能となった。By changing the material of the pipes and tanks of the other parts to the glass-based material, it is possible to use the glass-based material in a portion corresponding to about 90% of the total liquid contact area of the plating liquid. As a result, it has become possible to suppress the deposition on the surface of the semiconductor device other than the predetermined position (the plating target site of the plating target).

【００７８】図１において、ストレージ槽１からのメッ
キ液の流出口は、その底面に設けた例を示したが、側面
に設けても良い。この場合でも、同じ加熱槽１０を用い
て温調することができる。In FIG. 1, the outlet of the plating solution from the storage tank 1 is provided on the bottom surface, but it may be provided on the side surface. Even in this case, the temperature can be adjusted using the same heating tank 10.

【００７９】また、同じく図１においては、メッキ処理
槽２へのメッキ液の流入口をメッキ処理槽２の側面に設
けた例を示したが、メッキの厚さを制御するために、メ
ッキ処理槽２の底面に設けても良く、また、複数の流入
口を設けても良いことは言うまでも無い。Further, similarly, in FIG. 1, an example is shown in which the inlet of the plating solution to the plating treatment tank 2 is provided on the side surface of the plating treatment tank 2. However, in order to control the plating thickness, the plating treatment is performed. It goes without saying that it may be provided on the bottom surface of the tank 2 or a plurality of inflow ports may be provided.

【００８０】このような構成により、メッキ処理装置の
装置内部への金属析出を防止することができる。その結
果、装置内より剥離した金属が半導体基板に付着して不
良となることを低減することができる。よって異物除去
のために使用するフィルターの数を削減することが出
来、メンテナンスに係る費用及び時間を削減できる。With such a structure, it is possible to prevent metal deposition inside the plating processing apparatus. As a result, it is possible to prevent the metal peeled from the inside of the device from adhering to the semiconductor substrate and becoming defective. Therefore, the number of filters used for removing foreign matter can be reduced, and the cost and time for maintenance can be reduced.

【００８１】また、メッキ液の温度制御を行う場所を、
よりメッキ処理槽に近い場所にて行うことが可能とな
り、メッキを行う基板上にて正確な温度制御を図ること
が可能となる。Further, the place for controlling the temperature of the plating solution is
It is possible to perform the process in a place closer to the plating treatment tank, and it is possible to achieve accurate temperature control on the substrate to be plated.

【００８２】ここでは洗浄液（除去剤）としてハロゲン
系薬液を用いたが、これは金（Ａｕ）メッキの場合の一
例であり、ほかには、Ｃｕメッキであれば、濃硝酸や濃
硫酸を用いることもでき、Ｎｉメッキであれば、濃塩酸
や希硝酸を用いることもできる。Here, a halogen-based chemical liquid was used as the cleaning liquid (removing agent), but this is an example of gold (Au) plating. In addition, for Cu plating, concentrated nitric acid or concentrated sulfuric acid is used. In the case of Ni plating, concentrated hydrochloric acid or dilute nitric acid can also be used.

【００８３】以上、半導体集積回路のメッキ処理装置を
例にして、本発明を詳しく説明したが、本発明は、半導
体集積回路以外の半導体装置、例えば化合物半導体の製
造工程で使用されるメッキ処理装置や、更には液晶パネ
ルの製造工程におけるメッキ処理装置においても適用で
きることは言うまでもない。While the present invention has been described in detail above by taking the plating processing apparatus for semiconductor integrated circuits as an example, the present invention is directed to plating processing apparatuses used in the manufacturing process of semiconductor devices other than semiconductor integrated circuits, for example, compound semiconductors. Needless to say, the invention can also be applied to a plating apparatus in a liquid crystal panel manufacturing process.

【００８４】なお、本発明は、メッキ液のストレージ槽
と、ストレージ槽からメッキ液が流入するメッキ処理槽
と、メッキ処理槽からメッキ液が流入するバッファー槽
と、メッキ液の流量を計測する流量計と、メッキ液の温
度制御を行う熱交換ユニットと、メッキ液中の異物を除
去するフィルターと、メッキ液を循環させるポンプと、
各槽を連結する配管とからなる半導体集積回路の製造装
置において、メッキ液と接する部分が、ハロゲン系薬液
による洗浄に伴う表面の粗さの変化率が、初期値に比べ
て１０％以下である材料で構成されているように構成し
てもよい。In the present invention, a storage tank for the plating solution, a plating tank for the plating solution to flow from the storage tank, a buffer tank for the plating solution to flow from the plating tank, and a flow rate for measuring the flow rate of the plating solution. A heat exchange unit for controlling the temperature of the plating solution, a filter for removing foreign matter in the plating solution, and a pump for circulating the plating solution,
In a semiconductor integrated circuit manufacturing apparatus including a pipe connecting each tank, a rate of change in surface roughness of a portion in contact with a plating solution due to cleaning with a halogen-based chemical solution is 10% or less compared to an initial value. It may be configured to be made of a material.

【００８５】また、上記構成において、前記ハロゲン系
薬液による洗浄に伴う表面の粗さの変化率が、初期値に
比べて１０％以下である材料は、硬質ガラスまたは石英
ガラスであるように構成してもよい。In the above structure, the material whose rate of change in surface roughness due to the cleaning with the halogen-based chemical is 10% or less of the initial value is hard glass or quartz glass. May be.

【００８６】また、上記構成において、前記メッキ液の
流量計は、超音波を利用してメッキ液には非接触で計測
されるように構成してもよい。Further, in the above structure, the flow meter of the plating solution may be configured to measure the plating solution in a non-contact manner using ultrasonic waves.

【００８７】また、上記構成において、前記各槽を連結
する配管の一部が、硬質ガラスまたは石英ガラスで構成
されているように構成してもよい。Further, in the above structure, a part of the pipe connecting the respective tanks may be made of hard glass or quartz glass.

【００８８】また、上記構成において、メッキ液の温度
制御を、前記ストレージ槽において行うように構成して
もよい。In the above structure, the temperature of the plating solution may be controlled in the storage tank.

【００８９】[0089]

【発明の効果】以上のように、本発明のメッキ処理装置
は、上記メッキ液と触れる部分の少なくとも一部が、上
記除去剤を作用させた場合に同じ条件で測定したときに
表面粗さ変化率が樹脂よりも低い材料で形成されている
構成である。As described above, in the plating apparatus of the present invention, at least a part of the portion which comes into contact with the plating solution changes in surface roughness when measured under the same conditions when the removing agent acts. It is made of a material whose rate is lower than that of resin.

【００９０】これにより、メッキ処理を行って、所望で
ない位置にメッキ物質が析出した際に、上記除去剤を作
用させたときに、表面が粗くなりにくいので、その分、
その粗さでできる凹凸にてメッキ物質の析出が加速され
るのを抑制することができる。それゆえ、メッキ処理で
発生する、異物としてのメッキ物質の析出を容易かつ効
果的に抑制することができるという効果を奏する。As a result, when the plating substance is deposited at the undesired position after the plating treatment and the above-mentioned removing agent is applied, the surface is less likely to become rough.
Accumulation of the plating substance can be prevented from being accelerated due to the unevenness formed by the roughness. Therefore, it is possible to easily and effectively suppress the deposition of the plating substance as a foreign substance, which occurs during the plating process.

【００９１】また、本発明のメッキ処理装置は、上記の
構成に加えて、メッキ対象物をメッキ液に接触させるメ
ッキ処理槽を備え、上記メッキ処理槽の壁面が、上記除
去剤を作用させた場合に同じ条件で測定したときに表面
粗さ変化率が樹脂よりも低い材料で形成されている構成
である。Further, the plating apparatus of the present invention comprises, in addition to the above-mentioned constitution, a plating processing tank for bringing an object to be plated into contact with the plating solution, and the wall surface of the plating processing tank acts on the removing agent. In this case, the surface roughness change rate is lower than that of the resin when measured under the same conditions.

【００９２】これにより、上記の構成による効果に加え
て、メッキ処理で発生する、異物としてのメッキ物質の
析出を、いっそう容易かつ効果的に抑制することができ
るという効果を奏する。Thus, in addition to the effects of the above-described structure, it is possible to more easily and effectively suppress the deposition of the plating substance as a foreign substance, which occurs during the plating process.

【００９３】また、本発明のメッキ処理装置は、上記の
構成に加えて、メッキ対象物をメッキ液に接触させるメ
ッキ処理槽と、上記メッキ処理槽にメッキ液を運ぶメッ
キ処理槽用配管とを備え、上記メッキ処理槽用配管の壁
面が、上記除去剤を作用させた場合に同じ条件で測定し
たときに表面粗さ変化率が樹脂よりも低い材料で形成さ
れている構成である。In addition to the above configuration, the plating apparatus of the present invention comprises a plating processing tank for bringing an object to be plated into contact with the plating solution, and a plating processing tank pipe for carrying the plating solution to the plating processing tank. The wall surface of the plating tank pipe is made of a material having a lower rate of change in surface roughness than the resin when measured under the same conditions when the removing agent is applied.

【００９４】これにより、上記の構成による効果に加え
て、メッキ処理で発生する、異物としてのメッキ物質の
析出を、いっそう容易かつ効果的に抑制することができ
るという効果を奏する。Thus, in addition to the effects of the above-described structure, it is possible to more easily and effectively suppress the deposition of the plating substance as a foreign substance, which occurs during the plating process.

【００９５】また、本発明のメッキ処理装置は、上記の
構成に加えて、メッキ対象物をメッキ液に接触させるメ
ッキ処理槽と、上記メッキ処理槽に入れるメッキ液を貯
蔵するストレージ槽とを備え、上記ストレージ槽の壁面
が、上記除去剤を作用させた場合に同じ条件で測定した
ときに表面粗さ変化率が樹脂よりも低い材料で形成され
ている構成である。The plating apparatus of the present invention comprises, in addition to the above configuration, a plating tank for bringing an object to be plated into contact with the plating solution, and a storage tank for storing the plating solution to be placed in the plating tank. The wall surface of the storage tank is formed of a material having a lower rate of change in surface roughness than the resin when measured under the same conditions when the removing agent is applied.

【００９６】これにより、上記の構成による効果に加え
て、メッキ処理で発生する、異物としてのメッキ物質の
析出を、いっそう容易かつ効果的に抑制することができ
るという効果を奏する。Thus, in addition to the effects of the above-described structure, it is possible to more easily and effectively suppress the deposition of the plating substance as a foreign substance, which occurs during the plating process.

【００９７】また、本発明のメッキ処理装置は、上記の
構成に加えて、中に上記ストレージ槽を入れて、熱伝導
にてストレージ槽内のメッキ液を加熱する加熱槽を備え
た構成である。Further, the plating apparatus of the present invention has, in addition to the above configuration, a heating bath for putting the above storage bath therein and heating the plating solution in the storage bath by heat conduction. .

【００９８】これにより、上記の構成による効果に加え
て、メッキ処理で発生する、異物としてのメッキ物質の
析出を、いっそう容易かつ効果的に抑制することができ
るという効果を奏する。Thus, in addition to the effects of the above-described structure, it is possible to more easily and effectively suppress the deposition of the plating substance as a foreign substance, which occurs during the plating process.

【００９９】また、本発明のメッキ処理装置は、上記の
構成に加えて、メッキ対象物をメッキ液に接触させるメ
ッキ処理槽と、上記メッキ処理槽にメッキ液を運ぶメッ
キ処理槽用配管とを備え、上記メッキ処理槽用配管の一
部に、超音波式流量計が配置されており、上記メッキ処
理槽用配管のうち、上記超音波式流量計が配置されてい
る部位の壁面が、上記除去剤を作用させた場合に同じ条
件で測定したときに表面粗さ変化率が樹脂よりも低い材
料で形成されている構成である。In addition to the above configuration, the plating treatment apparatus of the present invention comprises a plating treatment tank for bringing an object to be plated into contact with the plating solution, and a plating treatment tank pipe for carrying the plating solution to the plating treatment tank. An ultrasonic flowmeter is arranged in a part of the plating tank piping, and the wall surface of the plating tank piping where the ultrasonic flowmeter is arranged is This is a structure in which the rate of change in surface roughness is lower than that of resin when measured under the same conditions when a removing agent is applied.

【０１００】これにより、上記の構成による効果に加え
て、メッキ処理で発生する、異物としてのメッキ物質の
析出を、いっそう容易かつ効果的に抑制することができ
るという効果を奏する。Thus, in addition to the effects of the above-described structure, it is possible to more easily and effectively suppress the deposition of the plating substance as a foreign substance, which occurs during the plating process.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明に係るメッキ処理装置の一構成例を示す
説明図である。FIG. 1 is an explanatory diagram showing a configuration example of a plating apparatus according to the present invention.

【図２】各材質のハロゲン系薬液（ヨウ素）による表面
粗さ変化率を示す説明図である。FIG. 2 is an explanatory diagram showing a surface roughness change rate by a halogen-based chemical liquid (iodine) of each material.

【図３】従来のメッキ処理装置の一構成例を示す説明図
である。FIG. 3 is an explanatory diagram showing a configuration example of a conventional plating apparatus.

【符号の説明】[Explanation of symbols]

１ ストレージ槽 ２ メッキ処理槽 ３ バッファー槽 ４ 循環ポンプ ６ フィルター ８ 配管 ９ 配管 １０ 加熱槽 １１ 流量計 1 storage tank 2 plating tank 3 buffer tanks 4 circulation pumps 6 filters 8 piping 9 piping 10 heating tank 11 Flowmeter

───────────────────────────────────────────────────── フロントページの続き (72)発明者 小田 肇 大阪府大阪市阿倍野区長池町22番22号 シ ャープ株式会社内 Ｆターム(参考） 5F067 DC01    ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Hajime Oda             22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka             Inside the company F-term (reference) 5F067 DC01

Claims (6)

【特許請求の範囲】[Claims] 【請求項１】メッキ物質を含んだメッキ液を供給して、
メッキ対象物をメッキ液に接触させることでメッキ対象
物をメッキするとともに、所望でない位置にメッキ物質
が析出した際には除去剤にてそのメッキ物質を除去する
メッキ処理装置において、 上記メッキ液と触れる部分の少なくとも一部が、 上記除去剤を作用させた場合に同じ条件で測定したとき
に表面粗さ変化率が樹脂よりも低い材料で形成されてい
ることを特徴とするメッキ処理装置。1. A plating solution containing a plating substance is supplied,
In the plating processing apparatus, the plating object is plated by bringing the plating object into contact with the plating solution, and when the plating material is deposited at an undesired position, the plating material is removed by a removing agent. A plating apparatus, wherein at least a part of the touched portion is formed of a material having a surface roughness change rate lower than that of a resin when measured under the same conditions when the removing agent is applied. 【請求項２】メッキ対象物をメッキ液に接触させるメッ
キ処理槽を備え、 上記メッキ処理槽の壁面が、 上記除去剤を作用させた場合に同じ条件で測定したとき
に表面粗さ変化率が樹脂よりも低い材料で形成されてい
ることを特徴とする請求項１記載のメッキ処理装置。2. A plating treatment tank for bringing an object to be plated into contact with a plating solution, wherein a wall surface of the plating treatment tank has a surface roughness change rate when measured under the same conditions when the removing agent is applied. The plating apparatus according to claim 1, wherein the plating processing apparatus is formed of a material lower than resin. 【請求項３】メッキ対象物をメッキ液に接触させるメッ
キ処理槽と、 上記メッキ処理槽にメッキ液を運ぶメッキ処理槽用配管
とを備え、 上記メッキ処理槽用配管の壁面が、 上記除去剤を作用させた場合に同じ条件で測定したとき
に表面粗さ変化率が樹脂よりも低い材料で形成されてい
ることを特徴とする請求項１記載のメッキ処理装置。3. A plating treatment tank for bringing an object to be plated into contact with a plating liquid, and a plating treatment tank pipe for carrying the plating liquid to the plating treatment tank, wherein the wall surface of the plating treatment tank pipe is the removing agent. The plating apparatus according to claim 1, wherein the plating processing apparatus is formed of a material having a surface roughness change rate lower than that of a resin when measured under the same conditions when the above is applied. 【請求項４】メッキ対象物をメッキ液に接触させるメッ
キ処理槽と、 上記メッキ処理槽に入れるメッキ液を貯蔵するストレー
ジ槽とを備え、 上記ストレージ槽の壁面が、 上記除去剤を作用させた場合に同じ条件で測定したとき
に表面粗さ変化率が樹脂よりも低い材料で形成されてい
ることを特徴とする請求項１記載のメッキ処理装置。4. A plating tank for bringing an object to be plated into contact with a plating solution, and a storage tank for storing the plating solution to be placed in the plating tank, wherein a wall surface of the storage tank acts as the removing agent. The plating treatment apparatus according to claim 1, wherein the plating treatment apparatus is formed of a material having a surface roughness change rate lower than that of resin when measured under the same conditions. 【請求項５】中に上記ストレージ槽を入れて、熱伝導に
てストレージ槽内のメッキ液を加熱する加熱槽を備えた
ことを特徴とする請求項４記載のメッキ処理装置。5. The plating processing apparatus according to claim 4, further comprising a heating tank in which the storage tank is placed and the plating solution in the storage tank is heated by heat conduction. 【請求項６】メッキ対象物をメッキ液に接触させるメッ
キ処理槽と、 上記メッキ処理槽にメッキ液を運ぶメッキ処理槽用配管
とを備え、 上記メッキ処理槽用配管の一部に、超音波式流量計が配
置されており、 上記メッキ処理槽用配管のうち、上記超音波式流量計が
配置されている部位の壁面が、 上記除去剤を作用させた場合に同じ条件で測定したとき
に表面粗さ変化率が樹脂よりも低い材料で形成されてい
ることを特徴とする請求項１記載のメッキ処理装置。6. A plating treatment tank for bringing an object to be plated into contact with a plating solution, and a plating treatment tank pipe for carrying the plating liquid to the plating treatment tank, wherein ultrasonic waves are applied to a part of the plating treatment tank pipe. Type flow meter is arranged, and when the wall surface of the portion of the plating tank piping where the ultrasonic type flow meter is arranged is measured under the same conditions when the removing agent is applied. The plating apparatus according to claim 1, wherein the plating processing apparatus is formed of a material having a surface roughness change rate lower than that of a resin.
JP2001225130A 2001-07-25 2001-07-25 Plating equipment Expired - Fee Related JP4014827B2 (en)

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JP2001225130A JP4014827B2 (en) 2001-07-25 2001-07-25 Plating equipment
PCT/JP2002/007476 WO2003010366A1 (en) 2001-07-25 2002-07-24 Apparatus for plating treatment
US10/484,628 US20040206622A1 (en) 2001-07-25 2002-07-24 Apparatus for plating treatment
KR1020047000985A KR100591706B1 (en) 2001-07-25 2002-07-24 Apparatus for Plating Treatment
CNB028148916A CN1292099C (en) 2001-07-25 2002-07-24 Apparatus for plating treatment
TW091116592A TWI292000B (en) 2001-07-25 2002-07-25

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JP (1) JP4014827B2 (en)
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WO (1) WO2003010366A1 (en)

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JP2005043069A (en) * 2003-07-22 2005-02-17 Dainippon Screen Mfg Co Ltd Absorbance meter, concentration measuring instrument, plating liquid analyzer, plating device, plating liquid analytical method, and plating method
JP2005076100A (en) * 2003-09-02 2005-03-24 Almex Inc Plating apparatus and method
JP2007530782A (en) * 2004-03-23 2007-11-01 グロマックス エス．アール．エル． Process and apparatus for galvanic electrocoating of metal items

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KR100591706B1 (en) 2006-06-20
CN1292099C (en) 2006-12-27
WO2003010366A1 (en) 2003-02-06
JP4014827B2 (en) 2007-11-28
TWI292000B (en) 2008-01-01
US20040206622A1 (en) 2004-10-21
CN1535331A (en) 2004-10-06

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