CN1292099C - Apparatus for plating treatment - Google Patents
Apparatus for plating treatment Download PDFInfo
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- CN1292099C CN1292099C CNB028148916A CN02814891A CN1292099C CN 1292099 C CN1292099 C CN 1292099C CN B028148916 A CNB028148916 A CN B028148916A CN 02814891 A CN02814891 A CN 02814891A CN 1292099 C CN1292099 C CN 1292099C
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- electrolytic plating
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- plating apparatus
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- 238000007747 plating Methods 0.000 title claims abstract description 37
- 239000007788 liquid Substances 0.000 claims abstract description 82
- 239000011521 glass Substances 0.000 claims abstract description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000009713 electroplating Methods 0.000 claims description 176
- 238000000034 method Methods 0.000 claims description 107
- 230000008569 process Effects 0.000 claims description 86
- 239000000126 substance Substances 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 abstract description 39
- 239000011347 resin Substances 0.000 abstract description 28
- 229920005989 resin Polymers 0.000 abstract description 28
- 230000008859 change Effects 0.000 abstract description 5
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 230000003746 surface roughness Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 34
- 239000002184 metal Substances 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 31
- 239000000758 substrate Substances 0.000 description 23
- 235000014347 soups Nutrition 0.000 description 21
- 230000000694 effects Effects 0.000 description 17
- 239000010931 gold Substances 0.000 description 13
- 229910052736 halogen Inorganic materials 0.000 description 13
- 150000002367 halogens Chemical class 0.000 description 13
- 230000033228 biological regulation Effects 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000009434 installation Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 6
- 229910052740 iodine Inorganic materials 0.000 description 6
- 239000011630 iodine Substances 0.000 description 6
- 239000010953 base metal Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
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- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012467 final product Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000001376 precipitating effect Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- 150000002739 metals Chemical class 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
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- 229920001577 copolymer Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01004—Beryllium [Be]
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- Chemical Kinetics & Catalysis (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A plating processing device is so arranged that at least a part of a portion touching plating liquid is made of a material whose change rate of surface roughness in response to a removing agent is lower than resin when the material and the resin are measured in the same conditions. For example, a storage tank (1), a plating processing tank (2), a buffer tank (3), and a pipe (9) are made of hard glass and quartz glass. With this, it is possible to prevent a plating material from being deposited as foreign body on wall surfaces of the plating processing tank, etc.
Description
Technical field
The present invention relates to the electrolytic plating apparatus that uses in the manufacturing installation etc. of semiconductor integrated circuit etc.
Background technology
The miniaturization and that carries electronic installation such as intelligent terminal is just making progress, and echoes mutually therewith, and the semiconductor integrated circuit itself that is installed in these devices also requires miniaturization and, high-density installationization.
As realize semiconductor integrated circuit etc. (below, be called semiconductor device) miniaturization, the effective means of high-density installationization, the favourable electroplating technology of using, and with the gold (Au) form so-called bump electrode in the position of the regulation on semiconductor device surface, utilize this bump electrode, semiconductor device is directly installed on method on the installation base plate, and this method is adopted widely.
Fig. 3 represents the summary of the electrolytic plating apparatus that uses so far.
In Fig. 3,51 expression holding tanks, 52 expression electroplating processes grooves, 53 expression dashpots, 54 expression recycle pumps, 55 expression float typeflowmeters, 56 expression strainers, 57 expression heat exchange units, 58 expression pipelines.The material of holding tank 51, electroplating processes groove 52, dashpot 53, heat exchange unit 57 and pipeline 58 adopts the resin series material.
Electroplate liquid with recycle pump 54 pressurizations flows in the holding tank 51.The electroplate liquid that is injected in the holding tank 51 is adjusted its flow velocity with holding tank 51, with the next electroplating processes groove 52 of flow velocity (deadweight of liquid) inflow of regulation.Secondly electroplate liquid flows into dashpot 53 from the relief outlet of electroplating processes groove 52, quickens with recycle pump 54 again, flows into holding tank 51.
Carry out the electroplate liquid circulation time, sometimes because the cavitation of recycle pump, bubbling in electroplate liquid.If on the surface of this bubble attached to substrate, then this bubble becomes the reason of hinder electroplating growth, in the worst case, unusual (electroplating thickness unusual or electroplate shape defect) takes place to electroplate.For this bubble is removed, for example, the electroplate liquid by recycle pump pressurization is temporarily flowed in the dashpot, make bubble in the liquid be discharged into atmosphere after, do not carry out the pressurization of electroplate liquid, utilize the deadweight of liquid to flow in the electroplating processes groove 52.
When electroplating, the inhomogeneity control of the speed of separating out of metal and speed of separating out on substrate, promptly in order to control electroplating thickness, the flow control of electroplate liquid, the control of the temperature of electroplate liquid also are important key elements.
In order to measure the flow of electroplate liquid,, float typeflowmeter 55 is set at pipeline midway from holding tank 51 to electroplating processes groove 52, control its flow.Heat exchange unit 57 (make hot water at resinous binding pipe internal recycle, carry out temperature adjustment (temperature regulation) indirectly) is immersed in the dashpot 53, carries out the temperature control of electroplate liquid.
In case electroplate, because the difference of the character of electroplate liquid, the position of on substrate, stipulating, for example on electroplate liquid circulation tube, recycle pump or plating tank itself etc., separate out plated metal sometimes.The part of the metal of separating out on the position beyond the position of these regulations is peeled off from the place of separating out, and becomes foreign matter and swim in electroplate liquid, moves in electrolytic plating apparatus along with flowing of electroplate liquid.If on the surface of this foreign matter attached to substrate, then owing to this reason, in the worst case, unusual (the unusual or plating shape defect of electroplating thickness) takes place to electroplate.For this foreign matter is removed, strainer 56 for example is set after recycle pump.In addition, as shown in Figure 3, strainer 56 was set also before electroplating processes groove 52.
Though with strainer the foreign matter that swims in the electroplate liquid is removed, deposition is fixed on precipitate on the inwall of electroplating processes groove etc. and can not be filtered device and removes.These precipitates might blocking pipe, bad phenomenon such as foreign matter quantity increase takes place, so with the serial soup of halogen (chloroazotic acid, iodine etc.) pipe blow-through and electroplating processes groove etc. termly.
As mentioned above, because the difference of the character of electroplate liquid, except desirable position, also precipitating metal on the part of electroplate liquids such as the inwall contact of the inwall of electroplating processes groove, pipeline for example.These metals mostly deposition are fixed on the inner-wall surface of electroplating processes groove etc., so utilize halogen series soup, clean termly and remove.
In technology in the past, there is the problem of separating out be difficult to easily and suppress effectively in electroplating processes, to take place like this as the electroplating substance of foreign matter.
Summary of the invention
The present invention finishes in view of the above-mentioned problems, and its purpose is to provide a kind of electrolytic plating apparatus of separating out as the electroplating substance of foreign matter of can be easily and suppressing effectively to take place in the electroplating processes.
In order to achieve the above object, electrolytic plating apparatus of the present invention is the electroplate liquid that a kind of supply contains electroplating substance, make and electroplate object contact electricity plating bath, electroplate electroplating object, when on undesirable position, separating out electroplating substance simultaneously, electrolytic plating apparatus with remover is removed this electroplating substance is characterized in that: be used under the situation that makes above-mentioned remover effect the material that the surfaceness velocity of variation is lower than resin when measuring by identical condition with at least a portion of the part of above-mentioned electroplate liquid contact and form.
According to above-mentioned structure, be used under the situation that makes above-mentioned remover effect the material that the surfaceness velocity of variation is lower than resin when measuring by identical condition with at least a portion of the part of above-mentioned electroplate liquid contact and form.
Therefore, carry out electroplating processes, when separating out electroplating substance on undesirable position, make above-mentioned remover do the time spent, the part that contacts with above-mentioned electroplate liquid that forms with above-mentioned material is compared with resin formation the time, and the surface is not easy coarse.Because it is coarse that the surface is not easy,, this part is accelerated so being suppressed at the big concavo-convex electroplating substance of going up of roughness.
The separating out as the electroplating substance of foreign matter of therefore, can be easily and suppressing effectively to take place in the electroplating processes.
In addition, electrolytic plating apparatus of the present invention is characterised in that: except above-mentioned structure, also have the electroplating processes groove that makes above-mentioned plating object contact electricity plating bath, the surfaceness velocity of variation material lower than resin formed when the wall of above-mentioned electroplating processes groove was used under the situation that makes above-mentioned remover effect and measures by identical condition.
According to above-mentioned structure, the surfaceness velocity of variation material lower than resin formed when the wall of above-mentioned electroplating processes groove was used under the situation that makes above-mentioned remover effect and measures by identical condition.Therefore, except the effect that above-mentioned structure produces, the separating out that can suppress easier and effectively to take place in the electroplating processes as the electroplating substance of foreign matter.
In addition, electrolytic plating apparatus of the present invention is characterised in that: except above-mentioned structure, also have the electroplating processes groove that makes above-mentioned plating object contact electricity plating bath; And electroplate liquid is transported to electroplating processes groove pipeline in the above-mentioned electroplating processes groove, above-mentioned electroplating processes groove is used under the situation that makes above-mentioned remover effect with the wall of pipeline that the surfaceness velocity of variation material lower than resin forms when measuring by identical condition.
According to above-mentioned structure, the electroplating processes groove is used under the situation that makes above-mentioned remover effect with the wall of pipeline that the surfaceness velocity of variation material lower than resin forms when measuring by identical condition.Therefore, except the effect that above-mentioned structure produces, the separating out that can suppress easier and effectively to take place in the electroplating processes as the electroplating substance of foreign matter.
In addition, electrolytic plating apparatus of the present invention is characterised in that: except above-mentioned structure, also have the electroplating processes groove that makes above-mentioned plating object contact electricity plating bath; And the holding tank that store to flow into the electroplate liquid in the above-mentioned electroplating processes groove, the surfaceness velocity of variation material lower than resin formed when the wall of above-mentioned holding tank was used under the situation that makes above-mentioned remover effect and measures by identical condition.
According to above-mentioned structure, the surfaceness velocity of variation material lower than resin formed when the wall of holding tank was used under the situation that makes above-mentioned remover effect and measures by identical condition.Therefore, except the effect that above-mentioned structure produces, the separating out that can suppress easier and effectively to take place in the electroplating processes as the electroplating substance of foreign matter.
In addition, electrolytic plating apparatus of the present invention is characterised in that: except above-mentioned structure, also have holding tank is placed on wherein, by the heating tank of the electroplate liquid in the thermal conduction heating holding tank.
According to above-mentioned structure, by the electroplate liquid in the thermal conduction heating holding tank.Therefore, the heat exchange unit as temperature regulation is used does not need the member with direct contact electricity plating bath.Therefore, except the effect that above-mentioned structure produces, the separating out that can suppress easier and effectively to take place in the electroplating processes as the electroplating substance of foreign matter.
In addition, electrolytic plating apparatus of the present invention is characterised in that: except above-mentioned structure, also have the electroplating processes groove that makes above-mentioned plating object contact electricity plating bath; And the electroplating processes groove pipeline that electroplate liquid is flowed to above-mentioned electroplating processes groove, the ultrasonic type under meter is configured in above-mentioned electroplating processes groove with on the position of pipeline, and above-mentioned electroplating processes groove is used under the situation that makes above-mentioned remover effect the surfaceness velocity of variation material formation lower than resin when measuring by identical condition with the wall at the position that has disposed above-mentioned ultrasonic type under meter in the pipeline.
According to above-mentioned structure, above-mentioned electroplating processes groove is used under the situation that makes above-mentioned remover effect with the wall at the position that has disposed above-mentioned ultrasonic type under meter in the pipeline that the surfaceness velocity of variation material lower than resin forms when measuring by identical condition.Above-mentioned ultrasonic type under meter is configured in the position of not contact electricity plating bath, therefore makes the ultrasonic signal contact by the above-mentioned electroplating processes groove interior electroplate liquid of pipeline, can be according to signal from the electroplate liquid reflection, and the flow of mensuration electroplate liquid.Therefore, except the effect that above-mentioned structure produces, the separating out that can suppress easier and effectively to take place in the electroplating processes as the electroplating substance of foreign matter.
Other purposes of the present invention, feature and advantage will have been understood fully according to record shown below.In addition, interests of the present invention will have been understood in the following explanation that the reference accompanying drawing carries out.
Description of drawings
Fig. 1 is the explanatory view of a structure example of expression electrolytic plating apparatus of the present invention.
The explanatory view of Fig. 2 surfaceness velocity of variation that to be the various materials of expression caused by halogen series soup (iodine).
Fig. 3 is the explanatory view of a structure example of expression existing plating process device.
Embodiment
Illustrate that according to Fig. 1 and Fig. 2 an example of the present invention is as follows.
So far, electrolytic plating apparatus all uses the resin series material to make from the electroplating processes groove to pipeline.
If these resins use the soup (remover) of halogen series to clean repeatedly, known its surperficial roughness increases.It is the results are shown in Fig. 2.
Under the situation of PVDF resin (Polyvinylidenefluoride) that in electroplating processes groove or holding tank, uses or PFS resin (TetrafluoroethylenePerFluoroAlkylvinylether copolymer), if be immersed in the iodine solution, then at normal temperatures, through time in a week, surfaceness (Ra: center line average roughness) compare, increase 70% ~ 158% with its initial value.
Follow the variation (surfaceness increase) of this surfaceness, the concavo-convex activity degree that forms on the surface changes, and it becomes nuclear, can think the acceleration of separating out as the metal of electroplating substance.
Different therewith, under the hard glass of putting down in writing in the lump in Fig. 2 and the situation of silica glass (to call glass in the following text), even be immersed in the same iodine solution, the variation of its surfaceness is very little, is 0% ~ 10%.Can not prevent separating out of metal on the prescribed position plating object position of object (electroplate) position in addition on the substrate fully, the routine cleaning that carries out with the soup of halogen series is inevitable, even carry out the cleaning of halogen series soup repeatedly, also be necessary to make the inner-wall surface (face that contacts with electroplate liquid) of electrolytic plating apparatus to adopt not coarse material.
Galvanized thickness is necessary that carrying out on the galvanized substrate be uniformly, but for this reason, the control of the temperature of the flow control of electroplate liquid, electroplate liquid also is important key element as mentioned above.
When measuring flow, use float typeflowmeter so far.The under meter of the type makes float (floating) float along with the size of flow, quantizes, and float itself becomes the major reason that hinders liquid stream.In addition, making a circulation of the pipeline that the installation under meter is used is very complicated, therefore the contact area (area that contacts with liquid) of electroplate liquid and pipeline increases, separate out easily at the bend of the inside of under meter and the pipeline place's metal that grades, originally also can separate out on one's body at float, so the exercising result along with the passing institute cumulative precipitate of duration of service might become and can not stably carry out correct flow measurement.
As the method for measuring medicinal liquid flow, even the hyperacoustic method of the employing that also can measure that do not contact with soup is arranged.Be a kind of ultrasonic signal to be transmitted in the fluid in the pipeline, read its transmitting signal, measure the method for flow velocity, flow exactly., under the situation of resinous pipeline, the inner-wall surface of pipeline is coarse, at this precipitating metal, so can not receive and dispatch the transmission signal exactly, can not use in electrolytic plating apparatus.
The temperature control of electroplate liquid, though be to adopt the heat exchange unit that resinous pipe is tied up to be used for the method for above-mentioned dashpot, the thermal conductivity of resin is bad, in order to carry out desirable heat exchange, needs to increase contact area.Therefore combine with the structure of heat exchanger, separate out easily as the metal of electroplating substance.
The temperature control of electroplate liquid is carried out before being preferably in the electroplating processes groove, but in the existing plating process device, owing to use resinous heat exchange unit, so metal is separated out easily.Therefore carry out temperature control with dashpot, by strainer, electroplate liquid is injected holding tank with the recycle pump pressurization.Its pipeline growth as a result, occurrence temperature is fallen, and is difficult to carry out temperature control accurately.Follow the increase of contact liq area in addition, cause separating out of metal more.
In addition, in the existing plating process device, before electroplating processes groove 52 shown in Figure 3, also be provided with strainer 56.This removes for the metallic foreign body that will separate out holding tank 51 and under meter 55 and the pipeline from holding tank 51 to electroplating processes groove 52 and is provided with.For foreign matter being removed with strainer, be necessary soup is increased the pressure of regulation, but, the pump of pressurization usefulness can not be set in order between holding tank 51 and electroplating processes groove 52, to prevent cavitation, be necessary to pressurize with the drop of soup.In order to obtain desirable pressure, holding tank 51 is arranged on corresponding height location, according to the blockage (flow decline) of strainer, need to change strainer.Therefore, might increase servicing time and expense.
Known to prevent from the prescribed position on the substrate plating object's position of object (electroplate) position in addition, to separate out metal (electroplating substance) such as gold, the contact area of the part that electrolytic plating apparatus is contacted with electroplate liquid is suppressed at inferior limit, in addition, be effective even the also indeclinable material of roughness that adopts the clean-out systems such as soup that utilize halogen series to carry out routine cleaning, inner-wall surface is made electrolytic plating apparatus.If adopt this method, then can suppress the generation of foreign matter in the electrolytic plating apparatus significantly, can reduce in the past in order to remove the quantity of the needed strainer of foreign matter, can suppress to change the relevant servicing time and the generation of expense with this.
The summary that forms the operation of the bump electrode that is made of gold (Au) on semiconductor integrated circuit will be explained below, but illustrates, needs to use halogen series soup (chloroazotic acid, iodine etc.) pipe blow-through and electroplating processes groove etc. termly.
Illustrated, the velocity of variation of the resin series material that uses in the electrolytic plating apparatus when figure 2 illustrates and the surfaceness of glass series material with the cleaning of halogen series soup, the resin series material might as well, the glass series material might as well, surfaceness (initial value) before cleaning is for seeing significant difference, if but be immersed in the soup (iodine) through after the week, the surfaceness of resin series material changes very greatly with respect to initial value, and velocity of variation is 70 ~ 158%.On the other hand, under the situation of glass series material, velocity of variation is especially little as can be known, only is 0 ~ 10%.This surfaceness velocity of variation is the smaller the better.
If surfaceness velocity of variation height, if the i.e. concavo-convex increase of inwall is a nuclear with it then, metal is separated out easily on each groove and pipeline, so when cleaning with soup, perhaps every cleaning needs to change each groove and pipeline for several times.
In this example, though as repeatedly with halogen series soup clean, inner wall surface thereof can not become coarse yet or do one's utmost to reduce coarse material, uses glass to constitute each one of electrolytic plating apparatus.Therefore, can be suppressed at the metal of separating out on the inner-wall surface.
Because the thermal conductivity ratio resin height of glass so constitute holding tank with glass, by holding tank is immersed in the heating tank, carries out the temperature control of electroplate liquid.Its result does not need heat exchange unit, can reduce the contact area with electroplate liquid significantly, can carry out the temperature control of electroplate liquid simultaneously in the nearer place of distance electroplating processes groove, can seek the stable of treatment temp.
Because holding tank and electroplating processes groove and the pipeline between them all adopt the glass series material, so can prevent metal separates out betwixt, between holding tank and electroplating processes groove,, can reduce maintenance cost, the servicing time of periodic replacement strainer etc. without strainer.The drop of holding tank and electroplating processes groove is set the electroplate liquid needed drop that flows for and is got final product in addition, can make the electrolytic plating apparatus compactness.
In addition,,, the ultrasonic flow meter that to measure flow with soup non-contiguously can be imported, pipeline can also be constituted simply so can suppress metal separating out on the inner-wall surface of pipeline because pipeline also is altered to glass.
Below, the electrolytic plating apparatus of using in the manufacturing process about semiconductor integrated circuit explains example of the present invention with accompanying drawing.
Soup of usefulness etc. in the following description in addition, substantially the same with soup and the working conditions used in the manufacturing of common semiconductor integrated circuit, except particular case, omit its detailed description.
At first, the manufacture method of the semiconductor integrated circuit of the electrolytic plating apparatus that uses this example is described, the operation that forms bump electrode on semiconductor substrate by gold-plated (Au) promptly is described.
In this example,, make by following operation as being that the substrate that a plurality of semiconductor integrated circuit constitute is installed by the above-mentioned semiconductor substrate of electroplating substrate (plating object) usefulness.
The semiconductor substrate of semiconductor integrated circuit has been installed, and is on all surfaces of silicon wafer of 8 inches (about 200mm) at diameter for example, the SiO of deposit specific thickness
2Deng insulating film, with photoetching technique and insulating film lithographic technique, at the position opening of the regulation of this insulating film.
Secondly, on all surfaces of wafer deposit for example thickness be about 1 micron metallic films such as Al-Si, with photoetching technique and metallic film lithographic technique, form as the bump electrode of input and output with terminal.Here, the size of bump electrode is approximately 60 microns * 110 microns.In addition, at this moment also form elements such as the transistor wiring each other be installed on the wafer surface etc. simultaneously.
Secondly; on the wafer all surfaces, deposit for example the about 0.6 micron insulating films such as SiN film of thickness as surface protection film, with well-known methods such as photoetching technique and insulating film lithographic techniques; position opening in the regulation of this surface protection film exposes bump electrode.The size of the peristome of surface protection film for example is approximately 30 microns * 80 microns.
After this, for example secondly the about 0.2 micron TiW of deposit, 2 microns Au, form the mask of electroplating usefulness as barrier metal with photoresists.Utilize this mask, use well-known electroplating technology, above bump electrode, separate out the about 18 microns gold of thickness (Au), form bump electrode.As mentioned above, the size of bump electrode for example is about 30 microns * 80 microns.Illustrate in greater detail as follows.
That is the metallic film of deposit specific thickness on the wafer all surfaces.This metallic film stop the Au that constitutes bump electrode with as the Al of the material of bump electrode or with the reaction of Al alloy, simultaneously owing to have the effect of so-called electric current strainer when carrying out metallide, so be also referred to as base metal.In addition,, stop property or other viewpoints, adopt the stacked film of a plurality of metals usually from above-mentioned such Au and Al or with the reaction of Al alloy even the metallic film of this base metal individual layer also has no relations.As base metal, on bottom deposit about 0.2 micron TiW, layer 0.2 micron the Au that gone up deposit thereon.
Secondly, on the wafer all surfaces, apply photoresists, use photoetching technique, will be in the position of the regulation on the wafer, be that photoresists above the surface protection film peristome are removed.
After above operation, in the electroplating work procedure of next stage, become by the semiconductor substrate 4 of electroplating substrate.In addition, the photoresists that remain on the wafer play mask in electroplating work procedure, and plated metal is separated out on the peristome of photoresists.
In addition, illustrate, form the electroplating work procedure of bump electrode by to above-mentioned semiconductor-based board electroplating.The electrolytic plating apparatus of this example is the device that carries out this electroplating work procedure.
At first, the negative electrode of electrolytic plating apparatus is connected on the prescribed position of the base metal of deposit on the wafer of above-mentioned semiconductor substrate.Then, make above-mentioned semiconductor substrate relative, be immersed in the electroplate liquid that is filled in the electroplating processes groove 2 with not shown anode almost parallel.Be added between semiconductor substrate and the anode by the voltage of power supply, utilize metalliding to make plated metal at the prescribed position of semiconductor substrate, promptly separate out on the peristome at photoresists regulation.
Be added in the voltage between semiconductor substrate and the anode, suitably set according to the size of semiconductor substrate and electroplating velocity etc. and get final product.
On the semiconductor substrate that forming of the bump electrode that is undertaken by above-mentioned electroplating work procedure is through with, remove photoresists, again with this bump electrode itself as mask, remove the base metal of unwanted part.Through the operation of regulation, finish semiconductor integrated circuit then.
Secondly, illustrate this example electrolytic plating apparatus in detail.
Fig. 1 is the structural outline figure of the electrolytic plating apparatus of this example of expression.
In Fig. 1,1 expression holding tank, 2 expression electroplating processes grooves, 3 expression dashpots, 4 expression recycle pumps, 6 expression strainers, 8 expression pipelines (resin pipeline), 9 expression pipelines (glass pipe), 10 expression heating tanks, the under meter (liquid noncontact (not contact liq) type) of 11 expression ultrasonic types.
About the size of each groove, holding tank 1 uses the groove of about 400mm (indulging) * 100mm (horizontal stroke) * 300mm (height), and electroplating processes groove 2 uses the groove of about 300mm * 100mm * 300mm, and dashpot 3 uses the groove of about 700mm * 500mm * 200mm.In addition, if having, heating tank 10 is enough to put into the floorage of holding tank 1 usefulness and highly get final product.
In the electrolytic plating apparatus of this example shown in Figure 1, holding tank 1, electroplating processes groove 2 and dashpot 3 are all used glass, are that hard glass or silica glass make, and 1 pipeline 9, the pipeline from holding tank 1 to electroplating processes groove 2 (electroplating processes groove pipeline) 9 also make with glass from strainer 6 to holding tank.
Because 2 usefulness glass make from strainer 6 to the electroplating processes groove, so the amount of the metal of separating out on the inner-wall surface of groove therein and pipeline pettiness extremely.
Later at electroplating processes groove 2 to using resinous pipeline between the strainer 6.Owing to use resinous pipeline,,, can stop the metallic foreign body of separating out therein to flow into holding tank 1 by strainer is set so metal is separated out on inner-walls of duct easily.
Also have no relations though make dashpot 3 with resin, owing to the contact area with electroplate liquid increases, so the amount of separating out of metal increases, the obstruction of strainer 6 is accelerated.Therefore, dashpot 3 is preferably also made of glass.
Owing to make pipeline 9,, therefore can use and utilize hyperacoustic under meter so the metal of separating out on the wall is micro-within it from holding tank 1 to electroplating processes groove 2 with glass.Different with the situation of the under meter of existing float-type, pipeline wherein is very simple, complement each other with using glass, and precipitating metal hardly wherein, its result can save the strainer before the necessary electroplating processes groove in the existing plating process device.In the electrolytic plating apparatus of this example, compare with one type of prior art syringe, the quantity of strainer can be reduced to about 1/5th, can reduce the needed expense of maintenance and the time of electrolytic plating apparatus, help the densification of electrolytic plating apparatus in addition.
In addition, in the existing plating process device, owing to use the pipeline of resin series material, so the surfaceness of inner surface of pipeline increases, the precipitate on the inwall increases, use utilizes hyperacoustic non-contacting under meter, can not obtain stable numerical value, but in this example, by being altered to the pipeline of glass series material, can suppress separating out in the pipeline, even in noncontact under meter (ultrasonic wave), also can stably measure.In addition,, the hamper in the pipelines such as float so far can be got rid of, more stable flow rate can be obtained by adopting noncontact under meter (ultrasonic wave).
The resin series material, for example polyacrylic thermal conductivity is 4.2 ~ 4.5 * 10
-4(cal/cmsec ℃), different therewith, the glass series material, for example the thermal conductivity of hard glass is 26.0 ~ 30.0 * 10
-4(cal/cmsec ℃) is than the big order of magnitude of resin.
Therefore, if make the heat exchange unit of the temperature control usefulness of carrying out electroplate liquid with glass, then specific energy is much smaller mutually with resinous situation.In addition, complement each other, can suppress separating out of metal, can carry out in the existing plating process device temperature control of the electroplate liquid that can only carry out with dashpot with holding tank with the miniaturization of heat exchange unit.Its result can carry out the control of temperature accurately of electroplate liquid in the nearer place of distance electroplating processes groove.
As heat exchange unit, though the cellular unit that has bundled normally used tubule can be immersed in the electroplate liquid in the holding tank 1, but in this example, holding tank 1 is a glass, utilize the good advantage of its thermal conductivity, for example shown in the example among Fig. 1,, also can carry out temperature desired control even holding tank 1 is directly inserted in the heating tank 10 that is provided with in addition.In the case, special heat exchange unit is not immersed in the electroplate liquid, so more can suppress separating out of metal.For example hot water is injected heating tank 10, utilize this hot water, with the heating of the electroplate liquid in the holding tank 1 by thermal conduction.
More than, 3 pipeline and the example of using resinous pipeline from dashpot 3 through recycle pumps 4 to the pipeline of strainer 6 have been described from electroplating processes groove 2 to dashpot.When pipeline is wherein also used glass, see there is not special problem from this point of separating out that suppresses metal.Near the pipeline the pump is owing to also will consider glass breakage that the vibration etc. of pump causes etc., so be necessary to look after especially the change of glass series material.
By the pipeline of inciting somebody to action position in addition, the material altering of each groove is the glass series material, can make about 90% part of total contact area of being equivalent to electroplate liquid is the glass series material, its result can suppress separating out on the prescribed position plating object position of object (electroplate) position in addition on semiconductor device surface.
In Fig. 1, be arranged on example on its bottom surface though show spout from the electroplate liquid of holding tank 1, also can be arranged on the side.Even in this case, also can be with same heating tank 10 attemperation.
In addition, equally in Fig. 1, though show on the side that the influx of the electroplate liquid of near electroplating processes groove 2 is arranged on electroplating processes groove 2, but in order to control galvanized thickness, also can be arranged on the bottom surface of electroplating processes groove 2, in addition, much less also a plurality of influxs can be set.
Adopt such structure, can prevent that metal from separating out in the inside of electrolytic plating apparatus.Its result can reduce the metal peeled off in install attached to the bad phenomenon on the semiconductor substrate.Therefore the number of the strainer that uses in order to remove foreign matter can be reduced, the expense and the time of maintenance can be reduced.
In addition, the temperature controlled place of carrying out electroplate liquid is carried out in the nearer place of distance electroplating processes groove, can carry out seeking temperature control accurately on the galvanized substrate.
Here tuck in (remover) as cleaning though used halogen series soup, this example that is gold-plated when (Au), in addition, if plating Cu so also can use the concentrated nitric acid or the vitriol oil, if electroplated Ni so also can be used concentrated hydrochloric acid or rare nitric acid.
More than, though with the electrolytic plating apparatus of semiconductor integrated circuit as example, understand the present invention in detail, but it is self-evident, the present invention also can be applicable to the semiconductor device beyond the semiconductor integrated circuit, for example electrolytic plating apparatus in the manufacturing process of electrolytic plating apparatus that uses in the manufacturing process of compound semiconductor and liquid crystal panel.
In addition, the present invention is at the holding tank by electroplate liquid, flow into the electroplating processes groove of electroplate liquid from holding tank, go into the dashpot of electroplate liquid from the electroplating processes concentrated flow, measure the under meter of the flow of electroplate liquid, carry out the temperature controlled heat exchange unit of electroplate liquid, the strainer that foreign matter in the electroplate liquid is removed, make electroplate liquid round-robin pump, and in the manufacturing installation of the semiconductor integrated circuit that constitutes of the pipeline that connects each groove, the part that contacts with electroplate liquid also can be with the cleaning of following halogen series soup to carry out, and the velocity of variation of surfaceness and initial value are in a ratio of the material formation below 10%.
In addition, in said structure, the cleaning of following halogen series soup to carry out, the velocity of variation of surfaceness and initial value are in a ratio of the material below 10%, also can be hard glass or silica glass.
In addition, in said structure, the under meter of above-mentioned electroplate liquid also can utilize ultrasonic wave, and not contact electricity plating bath is measured.
In addition, in said structure, a part that connects the pipeline of above-mentioned each groove constitutes with hard glass or silica glass.
In addition, in said structure, also can in above-mentioned holding tank, carry out the temperature control of electroplate liquid.
In addition, the concrete example or the embodiment that in the item of the optimal morphology that enforcement the present invention uses, implement, nothing but the example of lifting in order to understand technology contents of the present invention, be not only to be defined in the explanation that such concrete example carries out narrow sense, in the scope of the claim of spirit of the present invention and following record, can carry out various changes and enforcement.
The possibility of industrial utilization
The present invention relates to the electroplating processes dress used in the manufacturing device of semiconductor integrated circuit etc. etc. The invention of putting particularly can be for the information of carrying that requires miniaturization and, high-density installation In the such purposes of the semiconductor integrated circuit of installing in the electronic installations such as terminal.
Claims (12)
1. electrolytic plating apparatus, it is to supply with the electroplate liquid that contains electroplating substance, makes to electroplate object contact electricity plating bath, electroplate electroplating object, when separating out electroplating substance simultaneously on undesirable position, the electrolytic plating apparatus with remover is removed this electroplating substance is characterized in that:
At least a portion of the part that contacts with the above-mentioned electroplate liquid of above-mentioned electrolytic plating apparatus forms with glass,
Above-mentioned electrolytic plating apparatus has,
Make the electroplating processes groove of above-mentioned plating object contact electricity plating bath; And
Electroplate liquid is flowed to the electroplating processes groove pipeline of above-mentioned electroplating processes groove,
Above-mentioned electroplating processes groove forms with glass with the wall of pipeline.
2. electrolytic plating apparatus according to claim 1 is characterized in that: the wall of above-mentioned electroplating processes groove forms with glass.
3. electrolytic plating apparatus according to claim 1 is characterized in that: has and stores the holding tank that flows into the electroplate liquid in the above-mentioned electroplating processes groove,
The wall of above-mentioned holding tank forms with glass.
4. electrolytic plating apparatus according to claim 3 is characterized in that: have above-mentioned holding tank is placed on wherein, by the heating tank of the electroplate liquid in the thermal conduction heating holding tank.
5. electrolytic plating apparatus according to claim 1 is characterized in that: above-mentioned glass is hard glass.
6. electrolytic plating apparatus according to claim 1 is characterized in that: above-mentioned glass is silica glass.
7. electrolytic plating apparatus, it is to supply with the electroplate liquid that contains electroplating substance, makes to electroplate object contact electricity plating bath, electroplate electroplating object, when separating out electroplating substance simultaneously on undesirable position, the electrolytic plating apparatus with remover is removed this electroplating substance is characterized in that:
At least a portion of the part that contacts with the above-mentioned electroplate liquid of above-mentioned electrolytic plating apparatus forms with glass,
Above-mentioned electrolytic plating apparatus has,
Make the electroplating processes groove of above-mentioned plating object contact electricity plating bath; And
Electroplate liquid is flowed to the electroplating processes groove pipeline of above-mentioned electroplating processes groove,
At above-mentioned electroplating processes groove configuration ultrasonic type under meter on the position of pipeline,
Above-mentioned electroplating processes groove forms with glass with the wall at the position that has disposed above-mentioned ultrasonic type under meter in the pipeline.
8. electrolytic plating apparatus according to claim 7 is characterized in that: the wall of above-mentioned electroplating processes groove forms with glass.
9. electrolytic plating apparatus according to claim 7 is characterized in that: has and stores the holding tank that flows into the electroplate liquid in the above-mentioned electroplating processes groove,
The wall of above-mentioned holding tank forms with glass.
10. electrolytic plating apparatus according to claim 9 is characterized in that: have above-mentioned holding tank is placed on wherein, by the heating tank of the electroplate liquid in the thermal conduction heating holding tank.
11. electrolytic plating apparatus according to claim 7 is characterized in that: above-mentioned glass is hard glass.
12. electrolytic plating apparatus according to claim 7 is characterized in that: above-mentioned glass is silica glass.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP225130/2001 | 2001-07-25 | ||
| JP2001225130A JP4014827B2 (en) | 2001-07-25 | 2001-07-25 | Plating equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1535331A CN1535331A (en) | 2004-10-06 |
| CN1292099C true CN1292099C (en) | 2006-12-27 |
Family
ID=19058174
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028148916A Expired - Fee Related CN1292099C (en) | 2001-07-25 | 2002-07-24 | Apparatus for plating treatment |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20040206622A1 (en) |
| JP (1) | JP4014827B2 (en) |
| KR (1) | KR100591706B1 (en) |
| CN (1) | CN1292099C (en) |
| TW (1) | TWI292000B (en) |
| WO (1) | WO2003010366A1 (en) |
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| JP4295032B2 (en) * | 2003-07-22 | 2009-07-15 | 大日本スクリーン製造株式会社 | Plating equipment |
| JP4707941B2 (en) * | 2003-09-02 | 2011-06-22 | アルメックスＰｅ株式会社 | Plating processing apparatus and plating processing method |
| CN100564611C (en) * | 2004-03-23 | 2009-12-02 | 格洛玛斯有限公司 | The plating method for plating and the equipment of metal |
| CN103834974B (en) * | 2012-11-20 | 2016-10-05 | 宝山钢铁股份有限公司 | One realizes metal tape thickness of coating equally distributed horizontal electroplating bath device |
| JP6180893B2 (en) * | 2013-11-13 | 2017-08-16 | 矢崎総業株式会社 | Plating equipment |
| EP3000918B1 (en) * | 2014-09-24 | 2018-10-24 | topocrom systems AG | Method and device for the galvanic application of a surface coating |
| US11136685B2 (en) | 2015-11-05 | 2021-10-05 | Topocrom Systems Ag | Method and device for the galvanic application of a surface coating |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2446331A (en) * | 1944-02-14 | 1948-08-03 | William Marsh Rice Inst For Th | Electrodeposition of aluminum |
| US4322281A (en) * | 1980-12-08 | 1982-03-30 | Olin Corporation | Method for controlling foaming within gas-liquid separation area |
| JP2624703B2 (en) * | 1987-09-24 | 1997-06-25 | 株式会社東芝 | Method and apparatus for forming bump |
| JP2535454Y2 (en) * | 1992-06-29 | 1997-05-14 | 新日本製鐵株式会社 | Metal plate double-sided electrolytic device |
| JP3308333B2 (en) * | 1993-03-30 | 2002-07-29 | 三菱電機株式会社 | Electroplating apparatus and electrolytic plating method |
| US6042889A (en) * | 1994-02-28 | 2000-03-28 | International Business Machines Corporation | Method for electrolessly depositing a metal onto a substrate using mediator ions |
| US6010610A (en) * | 1996-04-09 | 2000-01-04 | Yih; Pay | Method for electroplating metal coating(s) particulates at high coating speed with high current density |
| US5911865A (en) * | 1997-02-07 | 1999-06-15 | Yih; Pay | Method for electroplating of micron particulates with metal coatings |
| US6231728B1 (en) * | 1996-11-22 | 2001-05-15 | Hubert F. Metzger | Electroplating apparatus |
| US6113769A (en) * | 1997-11-21 | 2000-09-05 | International Business Machines Corporation | Apparatus to monitor and add plating solution of plating baths and controlling quality of deposited metal |
| US6151558A (en) * | 1998-02-10 | 2000-11-21 | Conant; James R | Ultrasonic marine speedometer system |
| US6576110B2 (en) * | 2000-07-07 | 2003-06-10 | Applied Materials, Inc. | Coated anode apparatus and associated method |
| US6413390B1 (en) * | 2000-10-02 | 2002-07-02 | Advanced Micro Devices, Inc. | Plating system with remote secondary anode for semiconductor manufacturing |
-
2001
- 2001-07-25 JP JP2001225130A patent/JP4014827B2/en not_active Expired - Fee Related
-
2002
- 2002-07-24 US US10/484,628 patent/US20040206622A1/en not_active Abandoned
- 2002-07-24 KR KR1020047000985A patent/KR100591706B1/en not_active IP Right Cessation
- 2002-07-24 WO PCT/JP2002/007476 patent/WO2003010366A1/en active Application Filing
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| Publication number | Publication date |
|---|---|
| CN1535331A (en) | 2004-10-06 |
| WO2003010366A1 (en) | 2003-02-06 |
| KR100591706B1 (en) | 2006-06-20 |
| JP2003034897A (en) | 2003-02-07 |
| KR20040019355A (en) | 2004-03-05 |
| US20040206622A1 (en) | 2004-10-21 |
| TWI292000B (en) | 2008-01-01 |
| JP4014827B2 (en) | 2007-11-28 |
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