JP2003017691A5 - - Google Patents
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- JP2003017691A5 JP2003017691A5 JP2001201280A JP2001201280A JP2003017691A5 JP 2003017691 A5 JP2003017691 A5 JP 2003017691A5 JP 2001201280 A JP2001201280 A JP 2001201280A JP 2001201280 A JP2001201280 A JP 2001201280A JP 2003017691 A5 JP2003017691 A5 JP 2003017691A5
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- JP
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- Prior art keywords
- element isolation
- region
- type element
- substrate
- conductor
- Prior art date
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Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001201280A JP3798659B2 (ja) | 2001-07-02 | 2001-07-02 | メモリ集積回路 |
KR10-2002-0023055A KR100525331B1 (ko) | 2001-04-26 | 2002-04-26 | 반도체 장치 |
US10/132,520 US6632723B2 (en) | 2001-04-26 | 2002-04-26 | Semiconductor device |
TW091108721A TW544911B (en) | 2001-04-26 | 2002-04-26 | Semiconductor device |
CNB021410828A CN1230905C (zh) | 2001-04-26 | 2002-04-26 | 半导体器件 |
EP02009262A EP1253634A3 (en) | 2001-04-26 | 2002-04-26 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001201280A JP3798659B2 (ja) | 2001-07-02 | 2001-07-02 | メモリ集積回路 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003017691A JP2003017691A (ja) | 2003-01-17 |
JP2003017691A5 true JP2003017691A5 (ko) | 2005-07-28 |
JP3798659B2 JP3798659B2 (ja) | 2006-07-19 |
Family
ID=19038276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001201280A Expired - Fee Related JP3798659B2 (ja) | 2001-04-26 | 2001-07-02 | メモリ集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3798659B2 (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4044510B2 (ja) * | 2003-10-30 | 2008-02-06 | 株式会社東芝 | 半導体集積回路装置 |
JP4058403B2 (ja) | 2003-11-21 | 2008-03-12 | 株式会社東芝 | 半導体装置 |
KR100618698B1 (ko) * | 2004-06-21 | 2006-09-08 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조방법 |
KR100702014B1 (ko) * | 2005-05-03 | 2007-03-30 | 삼성전자주식회사 | 수직 채널 트랜지스터 구조를 갖는 단일 트랜지스터 플로팅바디 디램 소자들 및 그 제조방법들 |
JP4660324B2 (ja) * | 2005-09-06 | 2011-03-30 | 株式会社東芝 | Fbcメモリ装置 |
JP2007194259A (ja) * | 2006-01-17 | 2007-08-02 | Toshiba Corp | 半導体装置及びその製造方法 |
KR100900232B1 (ko) | 2007-05-22 | 2009-05-29 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조방법 |
JP2009117518A (ja) | 2007-11-05 | 2009-05-28 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
-
2001
- 2001-07-02 JP JP2001201280A patent/JP3798659B2/ja not_active Expired - Fee Related
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