JP2002273662A - Beveling wheel for silicon wafer periphery portion machining - Google Patents
Beveling wheel for silicon wafer periphery portion machiningInfo
- Publication number
- JP2002273662A JP2002273662A JP2001072997A JP2001072997A JP2002273662A JP 2002273662 A JP2002273662 A JP 2002273662A JP 2001072997 A JP2001072997 A JP 2001072997A JP 2001072997 A JP2001072997 A JP 2001072997A JP 2002273662 A JP2002273662 A JP 2002273662A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- wafer
- beveling
- beveling wheel
- wheel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/06—Devices or means for dressing or conditioning abrasive surfaces of profiled abrasive wheels
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、シリコンウエハの
外周部を加工するためのベベリングホイールに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a beveling wheel for processing an outer peripheral portion of a silicon wafer.
【０００２】[0002]
【従来の技術】シリコンウエハ（以下、ウエハという）
の加工工程は、シリコンインゴットを外周刃ブレードや
カップ型ホイールなどで所定寸法の円柱状のインゴット
に成形し、この円柱状インゴットを内周刃ブレードで所
定の厚さにスライスしてウエハとし、このウエハの外周
部をベベリングホイールで面取り研削し、その後にウエ
ハ面をラッピング、エッチング、ポリッシングして集積
回路のサブスレートを完成させる、というのが基本的な
工程である。2. Description of the Related Art Silicon wafers (hereinafter referred to as wafers)
In the processing step, the silicon ingot is formed into a cylindrical ingot of a predetermined size by an outer peripheral blade or a cup type wheel, and the cylindrical ingot is sliced to a predetermined thickness by an inner peripheral blade to form a wafer. The basic process involves chamfering and grinding the outer periphery of a wafer with a beveling wheel, and then lapping, etching, and polishing the wafer surface to complete the substrate of the integrated circuit.
【０００３】上記の加工工程のなかで、ウエハの外周部
をベベリングホイールで面取り研削する加工は、図２お
よび図３に示すようなベベリングホイールを使用し、図
４に示すようにして研削加工が行われる。In the above processing steps, the outer peripheral portion of the wafer is chamfered and ground by a beveling wheel using a beveling wheel as shown in FIGS. 2 and 3 and ground as shown in FIG. Processing is performed.
【０００４】図２の（ａ）はベベリングホイールの外観
の一例を示す斜視図であり、（ｂ）は外周部の部分拡大
図である。ホイール１００には、台金１０１の外周部に
１条または複数条の溝を形成した砥粒層１０２が固着さ
れている（図２（ｂ）は複数条の溝の例を示す）。台金
１０１は鉄製またはアルミニウム製の円盤状台金であ
り、砥粒層１０２はダイヤモンド砥粒とメタルボンドか
らなる砥粒層である。FIG. 2A is a perspective view showing an example of an appearance of a beveling wheel, and FIG. 2B is a partially enlarged view of an outer peripheral portion. An abrasive layer 102 having one or more grooves formed on the outer periphery of a base metal 101 is fixed to the wheel 100 (FIG. 2B shows an example of the plurality of grooves). The base metal 101 is a disk-shaped base metal made of iron or aluminum, and the abrasive layer 102 is an abrasive layer made of diamond abrasive and metal bond.
【０００５】図３はベベリングホイールの砥粒層の溝形
状の例を示す図で、（ａ）は１条の溝１０３ａを形成し
た例、（ｂ）は粗加工用の溝１０３ｂと仕上げ加工用の
溝１０３ｃをそれぞれ複数条形成した例、（ｃ）は同じ
溝１０３ｄを複数条形成した例を示す。FIGS. 3A and 3B show examples of the groove shape of the abrasive layer of the beveling wheel. FIG. 3A shows an example in which a single groove 103a is formed, and FIG. (C) shows an example in which a plurality of grooves 103c are formed.
【０００６】図４の（ａ）はウエハ外周部の研削加工方
法の一例を示す図で、（ｂ）は加工後のウエハの外周部
形状を示す図である。ウエハの加工工程において、ウエ
ハが切断されたままの状態では外周部端面のエッジ部が
尖っており、各加工工程での取り扱い作業時に欠けが発
生しやすく、この欠けたチップによりウエハ面が汚れた
り傷やクラックなどが発生したりして、半導体装置の歩
留まり低下を招くことになる。このため、ウエハの外周
部端面のエッジ部を削り取るベベリング加工が施され
る。このベベリング加工は、図４の（ａ）に示すよう
に、ウエハ２００を真空チャック３００により保持し、
ウエハ２００とホイール１００を回転させて、同図
（ｂ）に示すような形状に外周部を研削加工する。FIG. 4A is a diagram showing an example of a method of grinding the outer peripheral portion of the wafer, and FIG. 4B is a diagram showing the outer peripheral shape of the processed wafer. In the wafer processing process, when the wafer is cut, the edge of the outer peripheral end face is sharp, and chipping is apt to occur during handling work in each processing step. Scratches, cracks, and the like may occur, leading to a decrease in the yield of the semiconductor device. For this reason, a beveling process for shaving the edge of the outer peripheral end face of the wafer is performed. In this beveling process, the wafer 200 is held by a vacuum chuck 300 as shown in FIG.
By rotating the wafer 200 and the wheel 100, the outer peripheral portion is ground into a shape as shown in FIG.
【０００７】[0007]
【発明が解決しようとする課題】上記のようなウエハ外
周部加工用のベベリングホイールにおいて、砥粒層を形
成するための結合材として、銅、錫、ニッケル、亜鉛、
鉄、コバルト、タングステン、銀などの金属粉末と、そ
の他の添加物とからなるメタルボンドが用いられてい
る。これらの金属粉末と添加物および砥粒の混合物を金
型などに充填した後、７００〜９００℃で焼結すること
により、台金に砥粒層を固着させる。In the beveling wheel for processing the outer peripheral portion of the wafer as described above, copper, tin, nickel, zinc,
A metal bond composed of a metal powder such as iron, cobalt, tungsten, and silver and other additives is used. After the mixture of the metal powder, the additive and the abrasive grains is filled in a mold or the like, the mixture is sintered at 700 to 900 ° C. to fix the abrasive layer to the base metal.
【０００８】一方、半導体の分野においては、集積回路
の高集積化、小型化、高速化が進むにつれて、素材とな
るウエハに対する要求も一層厳しくなり、加工表面の微
細化、鏡面化が進められている。このような状況のなか
で、ウエハの製造工程における重要な問題としてウエハ
への金属汚染の問題がある。On the other hand, in the field of semiconductors, as integrated circuits become more highly integrated, smaller, and faster, the demands on wafers as materials become more severe, and finer and mirror-finished processing surfaces are being promoted. I have. Under such circumstances, an important problem in the wafer manufacturing process is the problem of metal contamination on the wafer.
【０００９】近年のウエハに対する要求項目は厳密かつ
厳格になってきており、金属汚染に関しては、重金属の
汚染は１０9ａｔｏｍｓ／ｃｍ2以下であることとされて
いる。ウエハの製造工程において金属汚染のおそれがあ
る工程としては、シリコンインゴットの外周研削、方位
加工工程における研削ホイールからの金属汚染、スライ
シング工程における切断工具からの金属汚染、ポリッシ
ング工程におけるポリッシャー、治工具類からの金属汚
染などが考えられるが、これらの汚染に加えて本発明者
らは、ウエハのベベリング加工におけるベベリングホイ
ールからの金属汚染の問題があることを突き止めた。In recent years, the requirements for wafers have become stricter and stricter. Regarding metal contamination, heavy metal contamination is said to be 10 9 atoms / cm 2 or less. Processes that may cause metal contamination in the wafer manufacturing process include: peripheral grinding of a silicon ingot, metal contamination from a grinding wheel in an orientation process, metal contamination from a cutting tool in a slicing process, polisher in a polishing process, jigs and tools In addition to these contaminations, the present inventors have found that there is a problem of metal contamination from a beveling wheel in beveling of a wafer.
【００１０】本発明が解決すべき課題は、ウエハのベベ
リング加工におけるベベリングホイールからの金属汚染
の実体を明らかにし、汚染の原因を排除してウエハの高
品質なベベリング加工を可能とすることにある。The problem to be solved by the present invention is to clarify the substance of metal contamination from a beveling wheel in beveling a wafer and eliminate the cause of the contamination to enable high-quality beveling of the wafer. is there.
【００１１】[0011]
【課題を解決するための手段】ベベリングホイールから
の金属汚染とは、ベベリングホイールの砥粒層中のある
種の金属粉末が、ベベリング加工中に砥粒層からウエハ
に拡散してウエハを汚染することである。本発明者ら
は、メタルボンド用の金属粉末として従来用いられてい
た銅、錫、ニッケル、亜鉛、鉄、コバルト、タングステ
ン、銀などのうち、いずれの金属がウエハに拡散しやす
いのかについて研究調査した結果、銅、ニッケル、亜鉛
が砥粒層からウエハに拡散しやすいことを確認した。本
発明はこの知見に基づくものであり、結合材の材料とし
てこれらの拡散しやすい金属粉末を排除することで、ベ
ベリングホイールからのウエハの金属汚染を実質的にな
くすことができる。SUMMARY OF THE INVENTION Metal contamination from a beveling wheel means that a certain kind of metal powder in the abrasive layer of the beveling wheel diffuses from the abrasive layer to the wafer during the beveling process to remove the wafer. Is to pollute. The present inventors have conducted research on which metal, such as copper, tin, nickel, zinc, iron, cobalt, tungsten, and silver, which has been conventionally used as a metal powder for metal bonding, is likely to diffuse into a wafer. As a result, it was confirmed that copper, nickel, and zinc were easily diffused from the abrasive layer to the wafer. The present invention is based on this finding, and it is possible to substantially eliminate metal contamination of a wafer from a beveling wheel by eliminating these easily diffused metal powders as a binder material.
【００１２】すなわち本発明は、台金の外周部に１条ま
たは複数条の溝を形成した砥粒層が固着されたベベリン
グホイールの、前記砥粒層の結合材がメタルボンドであ
り、このメタルボンド中の金属粉末が銅、ニッケル、亜
鉛のいずれをも含まない金属粉末であるシリコンウエハ
外周部加工用ベベリングホイールである。That is, according to the present invention, in a beveling wheel in which an abrasive layer having one or more grooves formed on an outer peripheral portion of a base metal is fixed, a binder of the abrasive layer is a metal bond. This is a beveling wheel for processing an outer peripheral portion of a silicon wafer, wherein the metal powder in the metal bond does not contain any of copper, nickel and zinc.
【００１３】ウエハのベベリング加工中に砥粒層中の
銅、ニッケル、亜鉛がウエハに拡散するメカニズムの解
明は今後の研究に待たねばならないが、これらの金属が
ウエハに拡散しやすい理由としては、これらの金属元素
は電子配列的にＳｉと共有結合しやすく、さらに研削時
の発熱により内部拡散が促進されることによるものと考
えられる。The elucidation of the mechanism by which copper, nickel, and zinc in the abrasive layer diffuse into the wafer during beveling of the wafer must be awaited for future research. The reason why these metals are easily diffused into the wafer is as follows. It is considered that these metal elements are likely to be covalently bonded to Si in an electronic arrangement, and that internal diffusion is promoted by heat generated during grinding.
【００１４】銅、ニッケル、亜鉛以外の金属について
は、本発明者らの研究結果ではベベリング加工中のウエ
ハへの拡散はほとんど認められず、メタルボンド中の金
属粉末として銅、ニッケル、亜鉛のいずれをも含まない
金属粉末を用いることにより、ウエハのベベリング加工
中に砥粒層からウエハに金属が拡散することを防止する
ことができる。With respect to metals other than copper, nickel, and zinc, the results of the present inventors' research showed that almost no diffusion to the wafer during beveling was performed, and any of copper, nickel, and zinc was used as the metal powder in the metal bond. By using a metal powder that does not contain any metal, diffusion of metal from the abrasive layer to the wafer during beveling of the wafer can be prevented.
【００１５】ここで、本発明のベベリングホイールのメ
タルボンド中の金属粉末を、錫または銀のいずれか一方
または両方と、コバルトまたは鉄のいずれか一方または
両方とからなるものとし、抗折強度が４００〜８００Ｍ
Ｐａとなるメタルボンドとするのが望ましい。メタルボ
ンド中における錫粉末および銀粉末は成形性を向上させ
るバインダーとしての機能を有し、コバルト粉末および
鉄粉末は砥粒の保持力を高める機能を有する。これらの
金属粉末を平均粒径１０μｍ以下、好ましくは５μｍ以
下とすることにより、砥粒が均一に分散した微細組織を
得ることができる。メタルボンドの抗折強度は、４００
ＭＰａ未満だと研削時の砥粒層磨耗が増加し、早期に砥
粒層の形状崩れが生じて加工精度が低下する。抗折強度
が８００ＭＰａを超えると切れ味が低下し、被加工物に
焼け、チッピングが発生する。Here, the metal powder in the metal bond of the beveling wheel of the present invention is made of one or both of tin and silver and one or both of cobalt and iron, and has a transverse rupture strength. Is 400-800M
It is desirable to use a metal bond that becomes Pa. The tin powder and the silver powder in the metal bond have a function as a binder for improving the formability, and the cobalt powder and the iron powder have a function for increasing the holding power of the abrasive grains. By setting the average particle size of these metal powders to 10 μm or less, preferably 5 μm or less, a fine structure in which abrasive grains are uniformly dispersed can be obtained. Metal bond flexural strength is 400
If it is less than MPa, the abrasive layer wear during grinding increases, and the shape of the abrasive layer collapses at an early stage, lowering the processing accuracy. If the transverse rupture strength exceeds 800 MPa, the sharpness is reduced, and the workpiece is burned and chipping occurs.
【００１６】また、メタルボンド中の金属組成を、錫ま
たは銀のいずれか一方または両方が５〜４０質量％、コ
バルトまたは鉄のいずれか一方または両方が６０〜９５
質量％の割合とするのが望ましい。錫または銀の割合が
５質量％より少ないとメタルボンドが硬めになって切れ
味が低下し、４０質量％を超えると錫または銀の流出が
発生して正常な組織が得られなくなり、メタルボンドの
抗折強度が４００ＭＰａ未満となる。コバルトまたは鉄
の割合が６０質量％より少ないと適正な砥粒保持力が得
られず、９５質量％を超えると製造工程における焼結温
度が高くなって砥粒を劣化させ、またメタルボンドの抗
折強度が８００ＭＰａ超となる。The metal composition in the metal bond is such that tin or silver, one or both, is 5 to 40% by mass, and cobalt or iron, one or both, is 60 to 95%.
It is desirable to set the ratio to mass%. If the ratio of tin or silver is less than 5% by mass, the metal bond becomes harder and the sharpness decreases. If it exceeds 40% by mass, tin or silver flows out and a normal structure cannot be obtained. Flexural strength is less than 400 MPa. If the proportion of cobalt or iron is less than 60% by mass, a proper abrasive grain holding power cannot be obtained, and if it exceeds 95% by mass, the sintering temperature in the production process becomes high, and the abrasive grains deteriorate, and the resistance of the metal bond increases. The bending strength exceeds 800 MPa.
【００１７】上記のベベリングホイールは、従来と同様
な製造方法、すなわち、金型を用いてメタルボンドを結
合材とした環状の砥粒層を製造し、この環状の砥粒層を
接着剤を介して台金に固着し、放電加工により砥粒層に
１条または複数条の溝を形成する製造方法によって製造
することができる。The above-mentioned beveling wheel is manufactured in the same manufacturing method as that of the prior art, that is, an annular abrasive layer using a metal bond as a binder is manufactured using a mold, and the annular abrasive layer is coated with an adhesive. It can be manufactured by a manufacturing method in which one or a plurality of grooves are formed in the abrasive layer by electric discharge machining.
【００１８】[0018]
【発明の実施の形態】図１は本発明の実施形態における
ベベリングホイールを示す部分断面図である。ベベリン
グホイール１０は、円盤状の台金１と、この台金１の外
周部に溝付き砥粒層２を固着したものである。台金１は
アルミニウム製で、外径約２０２ｍｍ、外周部の厚さ約
２０ｍｍである。砥粒層２は、粒度＃８００で集中度１
００のダイヤモンド砥粒とメタルボンドからなり、放電
加工により１条の溝３を形成したものである。本実施形
態では図１に示す形状の溝３を形成しているが、砥粒層
および溝の形状は前述の図３に示した形状を含め各種の
形状とすることができるのはいうまでもない。FIG. 1 is a partial sectional view showing a beveling wheel according to an embodiment of the present invention. The beveling wheel 10 has a disk-shaped base metal 1 and a grooved abrasive layer 2 fixed to the outer periphery of the base metal 1. The base metal 1 is made of aluminum and has an outer diameter of about 202 mm and a thickness of an outer peripheral part of about 20 mm. The abrasive layer 2 has a particle size of # 800 and a concentration of 1
It is made of diamond abrasive grains of No. 00 and a metal bond, and has one groove 3 formed by electric discharge machining. In the present embodiment, the groove 3 having the shape shown in FIG. 1 is formed, but it goes without saying that the shape of the abrasive layer and the groove can be various shapes including the shape shown in FIG. Absent.
【００１９】〔試験例１〕メタルボンドの金属組成をコ
バルト−錫系とし、コバルトと錫の割合を変えて図１に
示したベベリングホイール１０の砥粒層２に相当する環
状の砥粒層を作成し、組織観察および抗折強度試験を行
った。表１に金属組成と試験結果を示す。Test Example 1 An annular abrasive layer corresponding to the abrasive layer 2 of the beveling wheel 10 shown in FIG. 1 by changing the metal composition of the metal bond to a cobalt-tin system and changing the ratio of cobalt to tin. Was prepared, and a structure observation and a bending strength test were performed. Table 1 shows the metal composition and test results.
【００２０】[0020]
【表１】 [Table 1]
【００２１】〔試験例２〕メタルボンドの金属組成をコ
バルト−銀系とし、コバルトと銀の割合を変えて試験例
１と同様の環状の砥粒層を作成し、組織観察および抗折
強度試験を行った。表２に金属組成と試験結果を示す。[Test Example 2] The same metal composition of the metal bond was used as the cobalt-silver system, and the ratio of cobalt and silver was changed to form an annular abrasive layer similar to that in Test Example 1. The structure was observed and the bending strength test was performed. Was done. Table 2 shows the metal composition and test results.
【００２２】[0022]
【表２】 [Table 2]
【００２３】表１および表２からわかるように、コバル
トの割合が９５質量％を超えると焼結温度が高くなって
砥粒を劣化させ、またメタルボンドの抗折強度が８００
ＭＰａ超となること、および、錫または銀の割合が４０
質量％を超えると錫または銀の流出が発生して正常な組
織が得られなくなることが確認された。As can be seen from Tables 1 and 2, when the proportion of cobalt exceeds 95% by mass, the sintering temperature is increased, the abrasive grains are deteriorated, and the bending strength of the metal bond is 800.
MPa and the ratio of tin or silver is 40
It was confirmed that when the content was more than mass%, tin or silver flowed out and a normal tissue could not be obtained.
【００２４】〔試験例３〕試験例１および試験例２で作
成した砥粒層のうちの一部の砥粒層を用いてベベリング
ホイールを作成し、ウエハの端面加工試験を行った。発
明品１〜３はメタルボンドの金属組成が本発明の範囲内
にあるものであり、比較品１，２は本発明の範囲外のも
のである。従来品はメタルボンドの金属組成が銅−錫系
のもので、金属組成以外の条件は発明品と同じである。[Test Example 3] A beveling wheel was prepared using a part of the abrasive grain layers prepared in Test Example 1 and Test Example 2, and a wafer end face processing test was performed. Invention products 1 to 3 have a metal composition of the metal bond within the scope of the present invention, and comparative products 1 and 2 are outside the scope of the invention. In the conventional product, the metal composition of the metal bond is copper-tin-based, and the conditions other than the metal composition are the same as those of the invention product.
【００２５】加工条件 ホイール周速：１８００ｍ／ｍｉｎ 切り込み：０．５ｍｍ 被加工物：シリコンウエハ 外径１２５ｍｍ、厚さ０．
７ｍｍ 被加工物回転速度：１ｍｉｎ-1 研削液：純水Processing conditions Wheel peripheral speed: 1800 m / min Depth of cut: 0.5 mm Workpiece: Silicon wafer 125 mm in outer diameter, 0.1 mm in thickness
7mm Workpiece rotation speed: 1min- 1 Grinding fluid: pure water
【００２６】試験結果を表３に示す。Table 3 shows the test results.
【表３】 [Table 3]
【００２７】表３に示すように、発明品１〜３は従来品
と同程度以上の加工枚数が得られ、しかも金属汚染の発
生は見られなかった。比較品１は砥粒の劣化のため使用
不能に近く、比較品２は砥粒層の組織不良のため形状崩
れが大きく、加工枚数も少なかった。従来品は加工中に
メタルボンド中のＣｕがウエハに拡散してウエハが汚染
されることが確認された。As shown in Table 3, the number of processed sheets of the invention products 1 to 3 was approximately the same as or larger than that of the conventional product, and no metal contamination was observed. Comparative product 1 was almost unusable due to the deterioration of the abrasive grains, and comparative product 2 had a large shape collapse due to poor structure of the abrasive layer, and the number of processed pieces was small. In the conventional product, it was confirmed that Cu in the metal bond diffused into the wafer during processing and the wafer was contaminated.
【００２８】[0028]
【発明の効果】シリコンウエハ外周部加工用ベベリング
ホイールの砥粒層の結合材であるメタルボンドの金属粉
末として銅、ニッケル、亜鉛のいずれをも含まない金属
粉末を使用することにより、ウエハの外周部加工時のベ
ベリングホイールからの金属汚染を実質的になくすこと
ができる。According to the present invention, a metal powder containing neither copper, nickel nor zinc is used as a metal powder of a metal bond which is a binder of an abrasive layer of a beveling wheel for processing a silicon wafer outer peripheral portion. Metal contamination from the beveling wheel during processing of the outer peripheral portion can be substantially eliminated.
【００２９】メタルボンド中の金属粉末を、錫または銀
のいずれか一方または両方と、コバルトまたは鉄のいず
れか一方または両方とからなり、メタルボンドの抗折強
度が４００〜８００ＭＰａとなるように特定の組成割合
とすることにより、正常な砥粒層組織が得られるととも
に、加工時に砥粒層の形状崩れが生じることなく、また
被加工物に焼け、チッピングが発生することなく、良好
な切れ味と加工精度が得られる。The metal powder in the metal bond is made of one or both of tin and silver, and one or both of cobalt and iron, and specified so that the metal bond has a bending strength of 400 to 800 MPa. By the composition ratio of the normal abrasive grain layer structure can be obtained, without the shape of the abrasive grain layer collapse during processing, and without burning and chipping on the workpiece, good sharpness and Processing accuracy can be obtained.
【図１】 本発明の実施形態におけるベベリングホイー
ルを示す部分断面図である。FIG. 1 is a partial sectional view showing a beveling wheel according to an embodiment of the present invention.
【図２】 ベベリングホイールの全体形状の例を示す図
である。FIG. 2 is a diagram illustrating an example of an overall shape of a beveling wheel.
【図３】 ベベリングホイールの砥粒層の溝の形態の例
を示す図である。FIG. 3 is a diagram illustrating an example of a form of a groove in an abrasive layer of a beveling wheel.
【図４】 ベベリングホイールによる研削加工の例を示
す図である。FIG. 4 is a diagram illustrating an example of grinding by a beveling wheel.
【符号の説明】 １ 台金 ２ 砥粒層 ３ 溝 １０ ベベリングホイール[Explanation of Signs] 1 base metal 2 abrasive layer 3 groove 10 beveling wheel
───────────────────────────────────────────────────── フロントページの続き (72)発明者 三國 喜和 福岡県浮羽郡田主丸町大字竹野210番地 ノリタケダイヤ株式会社内 Ｆターム(参考） 3C063 AA02 AB03 BA24 BB02 BC01 BC02 BG07 BH07 CC02 CC17 EE10 EE29 FF30 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Yoshikazu Mikuni 210 No. Takeno, Tanushimaru-cho, Ukiha-gun, Fukuoka Prefecture F-term in Noritake Diamond Co., Ltd.
Claims (3)
形成した砥粒層が固着されたシリコンウエハ外周部加工
用ベベリングホイールであって、前記砥粒層の結合材が
メタルボンドであり、このメタルボンド中の金属粉末が
銅、ニッケル、亜鉛のいずれをも含まない金属粉末であ
るシリコンウエハ外周部加工用ベベリングホイール。A beveling wheel for processing an outer peripheral portion of a silicon wafer to which an abrasive layer having one or more grooves formed on an outer peripheral portion of a base metal is fixed, wherein a binder of the abrasive layer is metal. A beveling wheel for processing an outer peripheral portion of a silicon wafer, wherein the metal powder in the metal bond does not contain any of copper, nickel and zinc.
たは銀のいずれか一方または両方と、コバルトまたは鉄
のいずれか一方または両方とからなり、メタルボンドの
抗折強度が４００〜８００ＭＰａである請求項１記載の
シリコンウエハ外周部加工用ベベリングホイール。2. The metal powder in the metal bond is made of one or both of tin and silver, and one or both of cobalt and iron, and the metal bond has a bending strength of 400 to 800 MPa. The beveling wheel for processing an outer peripheral portion of a silicon wafer according to claim 1.
たは銀のいずれか一方または両方が５〜４０質量％、コ
バルトまたは鉄のいずれか一方または両方が６０〜９５
質量％の割合である請求項２記載のシリコンウエハ外周
部加工用ベベリングホイール。3. The metal composition in the metal bond is such that one or both of tin and silver is 5 to 40% by mass, and one or both of cobalt and iron is 60 to 95% by mass.
3. The beveling wheel for processing an outer peripheral portion of a silicon wafer according to claim 2, which is a percentage by mass.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001072997A JP3456979B2 (en) | 2001-03-14 | 2001-03-14 | Beveling wheel for peripheral processing of silicon wafer |
| TW090133374A TW528658B (en) | 2001-03-14 | 2001-12-31 | Beveling wheel for processing silicon wafer outer periphery |
| KR1020020004462A KR100653155B1 (en) | 2001-03-14 | 2002-01-25 | Beveling wheel for processing outer circumference part of silicone wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001072997A JP3456979B2 (en) | 2001-03-14 | 2001-03-14 | Beveling wheel for peripheral processing of silicon wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002273662A true JP2002273662A (en) | 2002-09-25 |
| JP3456979B2 JP3456979B2 (en) | 2003-10-14 |
Family
ID=18930498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001072997A Expired - Fee Related JP3456979B2 (en) | 2001-03-14 | 2001-03-14 | Beveling wheel for peripheral processing of silicon wafer |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3456979B2 (en) |
| KR (1) | KR100653155B1 (en) |
| TW (1) | TW528658B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005177889A (en) * | 2003-12-17 | 2005-07-07 | Kurenooton Kk | Method of manufacturing metal bonded wheel, and die used for the same |
| JP2006123094A (en) * | 2004-10-29 | 2006-05-18 | Toyoda Mach Works Ltd | Grinding wheel for preventing air layer accompanying side surface from entering all the way into outer peripheral grinding surface |
| WO2008093941A1 (en) * | 2007-02-02 | 2008-08-07 | Sung Haeng Jo | Cutting tip |
| JP2011192687A (en) * | 2010-03-12 | 2011-09-29 | Hitachi Metals Ltd | Processing apparatus for semiconductor substrate, method for manufacturing semiconductor substrate, and semiconductor substrate |
| US9102038B2 (en) | 2011-08-24 | 2015-08-11 | Nippon Steel & Sumikin Materials Co., Ltd. | Beveling grindstone |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007097584A1 (en) * | 2006-02-24 | 2007-08-30 | Ehwa Diamond Industrial Co., Ltd. | Cutting tip, method for making the cutting tip and cutting tool |
-
2001
- 2001-03-14 JP JP2001072997A patent/JP3456979B2/en not_active Expired - Fee Related
- 2001-12-31 TW TW090133374A patent/TW528658B/en not_active IP Right Cessation
-
2002
- 2002-01-25 KR KR1020020004462A patent/KR100653155B1/en active IP Right Grant
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005177889A (en) * | 2003-12-17 | 2005-07-07 | Kurenooton Kk | Method of manufacturing metal bonded wheel, and die used for the same |
| JP2006123094A (en) * | 2004-10-29 | 2006-05-18 | Toyoda Mach Works Ltd | Grinding wheel for preventing air layer accompanying side surface from entering all the way into outer peripheral grinding surface |
| JP4518254B2 (en) * | 2004-10-29 | 2010-08-04 | 株式会社ジェイテクト | A grindstone that prevents the side-associated air layer from entering the outer peripheral grinding surface |
| WO2008093941A1 (en) * | 2007-02-02 | 2008-08-07 | Sung Haeng Jo | Cutting tip |
| GB2457209A (en) * | 2007-02-02 | 2009-08-12 | Sung Haeng Jo | Cutting tip |
| GB2457209B (en) * | 2007-02-02 | 2011-05-25 | Sung Haeng Jo | Cutting tip |
| DE112008000082B4 (en) * | 2007-02-02 | 2012-03-01 | Sung Haeng Jo | Cutting plate and method for producing a cutting plate |
| JP2011192687A (en) * | 2010-03-12 | 2011-09-29 | Hitachi Metals Ltd | Processing apparatus for semiconductor substrate, method for manufacturing semiconductor substrate, and semiconductor substrate |
| US9102038B2 (en) | 2011-08-24 | 2015-08-11 | Nippon Steel & Sumikin Materials Co., Ltd. | Beveling grindstone |
Also Published As
| Publication number | Publication date |
|---|---|
| TW528658B (en) | 2003-04-21 |
| KR20020073085A (en) | 2002-09-19 |
| KR100653155B1 (en) | 2006-12-01 |
| JP3456979B2 (en) | 2003-10-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2843688A1 (en) | Dicing blade | |
| US7073496B2 (en) | High precision multi-grit slicing blade | |
| JP2014128877A (en) | Surface processing apparatus and method | |
| KR20170008672A (en) | Dresser tool and tip shape molding method of cutting blade using the dresser tool | |
| JP3456979B2 (en) | Beveling wheel for peripheral processing of silicon wafer | |
| JP6687231B2 (en) | Polishing tool, method for manufacturing the same, and method for manufacturing an abrasive | |
| JP2007125636A (en) | Electroformed thin edge grinding wheel | |
| JP2013099831A (en) | Grinding stone | |
| JP2014061585A (en) | Vitrified bond super-abrasive wheel and method for grinding wafer using the same | |
| JP3942394B2 (en) | Beveling wheel for processing the outer periphery of silicon wafers | |
| KR20180001446A (en) | Cutting grindstone | |
| JP5566189B2 (en) | Thin blade | |
| JP2022047538A (en) | Chamfer grinding method and chamfer grinding device | |
| EP1201367A1 (en) | Dresser for polishing cloth and manufacturing method therefor | |
| JP3434801B2 (en) | Method for manufacturing beveling wheel for processing peripheral portion of silicon wafer | |
| JP2011115867A (en) | Thin-edged blade | |
| JP4661025B2 (en) | Metal bond grindstone and manufacturing method thereof | |
| JP2010247287A (en) | Manufacturing method for silicon carbide single crystal substrate | |
| US10562154B2 (en) | Cutting blade | |
| JP2005129743A (en) | Dicing method | |
| WO2022102335A1 (en) | Method for manufacturing porous metal bonded grindstone, and method for manufacturing porous metal bonded wheel | |
| JP2019104079A (en) | Metal blade, cutting processing device and manufacturing method for metal blade | |
| JP2007266441A (en) | Cup-like grinding stone for semiconductor wafer rear surface grinding and grinding method | |
| JP2005251909A (en) | Dressing method | |
| JP6281988B2 (en) | Surface processing apparatus and method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TRDD | Decision of grant or rejection written | ||
| R150 | Certificate of patent or registration of utility model |
Ref document number: 3456979 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080801 Year of fee payment: 5 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080801 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090801 Year of fee payment: 6 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090801 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100801 Year of fee payment: 7 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110801 Year of fee payment: 8 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110801 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120801 Year of fee payment: 9 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120801 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130801 Year of fee payment: 10 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |