JP2002252082A - Display device and its manufacturing method - Google Patents
Display device and its manufacturing methodInfo
- Publication number
- JP2002252082A JP2002252082A JP2001163958A JP2001163958A JP2002252082A JP 2002252082 A JP2002252082 A JP 2002252082A JP 2001163958 A JP2001163958 A JP 2001163958A JP 2001163958 A JP2001163958 A JP 2001163958A JP 2002252082 A JP2002252082 A JP 2002252082A
- Authority
- JP
- Japan
- Prior art keywords
- film
- display device
- light
- emitting element
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 15
- 238000007789 sealing Methods 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 19
- 239000012298 atmosphere Substances 0.000 claims description 10
- 239000011521 glass Substances 0.000 abstract description 30
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 230000002265 prevention Effects 0.000 abstract 3
- 239000010408 film Substances 0.000 description 124
- 239000010410 layer Substances 0.000 description 36
- 230000001681 protective effect Effects 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000005394 sealing glass Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum quinolinol Chemical compound 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- BTEAMLUWLVUBFF-UHFFFAOYSA-N 5-(3-methylphenyl)-4-phenylcyclohexa-2,4-diene-1,1-diamine Chemical compound CC=1C=C(C=CC1)C1=C(C=CC(C1)(N)N)C1=CC=CC=C1 BTEAMLUWLVUBFF-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は表示装置およびその
製造方法に関し、特には封止部内に発光素子を設けてな
る表示装置及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device and a method of manufacturing the same, and more particularly, to a display device having a light emitting element provided in a sealing portion and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】自発光型の素子（以下、発光素子と記
す）である有機エレクトロルミネッセンス(electrolumi
nescence：以下ＥＬと記す）素子は、カソード電極とア
ノード電極との間に、有機発光層を含む有機膜を挟持し
てなる。このような発光素子は、水分や酸素によって有
機膜が損傷し、発光素子としての機能を損なうことが知
られている。このため、支持体となるガラス基板の表示
領域上に発光素子を形成してなる表示装置においては、
大気中の水分による有機膜の劣化を防ぐための様々な形
態の封止が施されている。2. Description of the Related Art Organic light-emitting devices (hereinafter referred to as light-emitting devices) are known as organic electroluminescent devices.
An element comprises an organic film including an organic light-emitting layer between a cathode electrode and an anode electrode. It is known that in such a light-emitting element, an organic film is damaged by moisture or oxygen, thereby impairing a function as a light-emitting element. Therefore, in a display device in which a light-emitting element is formed over a display region of a glass substrate serving as a support,
Various forms of sealing are applied to prevent deterioration of the organic film due to moisture in the atmosphere.
【０００３】上記表示装置における一般的な封止形態と
しては、凹部を有する金属缶や封止用ガラスを、この凹
部内に表示領域を収納する状態でガラス基板上に被せる
構造が実施されている。この場合、支持体となるガラス
基板と金属缶や封止用ガラスの間には中空部が形成され
るが、この中空部には、ガラス基板と金属缶や封止用ガ
ラスとの貼り付け部分からこの中空部に進入した水分や
酸素を捕集するための吸湿材や脱酸素材を挿入すること
が多い。[0003] As a general sealing form in the above display device, a structure in which a metal can or a sealing glass having a concave portion is covered on a glass substrate in a state in which a display region is accommodated in the concave portion is implemented. . In this case, a hollow portion is formed between the glass substrate serving as the support and the metal can or the glass for sealing. In this hollow portion, a portion where the glass substrate is bonded to the metal can or the glass for sealing is attached. In many cases, a hygroscopic material or a deoxidizing material for trapping moisture and oxygen entering the hollow portion is inserted.
【０００４】ところが、このような封止形態の表示装置
では、発光素子を挟んだ状態でガラス基板と対向させて
金属缶を被せたり、封止用ガラスの内部（中空部）に吸
湿剤や脱酸素剤を挿入しているため、支持体となるガラ
ス基板とは逆の方向から発光光を取り出すことができな
い。[0004] However, in such a sealed display device, a metal can is placed facing the glass substrate with the light emitting element interposed therebetween, or a moisture absorbent or desorbing agent is placed inside the sealing glass (hollow portion). Since an oxygen agent is inserted, emitted light cannot be extracted from a direction opposite to a glass substrate serving as a support.
【０００５】そこで、ガラス基板とは逆方向から発光光
を取り出す、いわゆる「上面発光方式」表示装置におい
ては、図３に示すような封止形態が実施されている。す
なわち、支持体となるガラス基板２０１の表示領域上に
形成された発光素子２０２を覆う状態で、真空蒸着法な
どの成膜方法によって封止用の薄膜２０３を成膜し、さ
らにその上部に紫外線硬化樹脂２０４などを介して保護
ガラス板２０５を接着して封止がなされている。封止用
の薄膜２０３としては、例えば、ＳｉＮｘ（窒化シリコ
ン）などが用いられている。Therefore, in a so-called "top emission type" display device in which emitted light is extracted from a direction opposite to the glass substrate, a sealing form as shown in FIG. 3 is implemented. That is, a sealing thin film 203 is formed by a film forming method such as a vacuum evaporation method in a state of covering the light emitting element 202 formed on a display region of the glass substrate 201 serving as a support, and an ultraviolet light is further formed thereon. The protective glass plate 205 is adhered via a cured resin 204 or the like to perform sealing. As the thin film 203 for sealing, for example, SiNx (silicon nitride) or the like is used.
【０００６】また、このような構成の上面発光方式の表
示装置においては、保護ガラス板２０５の表面に蛍光灯
やその他の外光による映り込みが生じ、これによって表
示機能が著しく劣化することを防止するために、保護ガ
ラス板２０５の表面にＡＲコート（Anti Reflection Co
at：以下、反射防止膜と記す）２０６を設けている。反
射防止膜２０６は、保護ガラス板２０５とは屈折率の異
なる透明材料からなり、反射防止膜２０６の表面で反射
する光と、反射防止膜２０６を通過し反射防止膜２０６
と保護ガラス板２０５との界面で反射する光との位相条
件を反対に合わせることにより、互いに弱めさせ、反射
光を減少させる機能を有する。In the top-emission type display device having such a configuration, the surface of the protective glass plate 205 is prevented from being reflected by a fluorescent lamp or other external light, thereby preventing the display function from being significantly deteriorated. In order to achieve this, an AR coat (Anti Reflection Co.)
at: hereinafter, referred to as an anti-reflection film) 206 is provided. The anti-reflection film 206 is made of a transparent material having a different refractive index from that of the protective glass plate 205, and reflects the light reflected on the surface of the anti-reflection film 206 and the light passing through the anti-reflection film 206.
By adjusting the phase conditions of the light reflected at the interface between the light source and the protective glass plate 205 to be opposite to each other, they have a function of weakening each other and reducing the reflected light.
【０００７】図４には、保護ガラス板２０５上に形成し
た反射防止膜２０６による反射防止の概念図を示す。反
射防止膜２０６に入射した光波ｈは、反射防止膜２０６
の表面（つまり大気と反射防止膜２０６との界面２０６
ａ）及び反射防止膜２０６と保護ガラス板２０５との界
面２０５ａで反射される。この２つの界面２０５ａ，２
０６ａで生じる反射光ｈ１，ｈ２には、π／２の位相差
が生じる。従って、２つの反射光ｈ１，ｈ２の正味の位
相変位は、反射防止膜の屈折率をｎ１、厚さをｄ１、光
波ｈの波長をλとした場合、光路差２×ｎ１×ｄ１と規
定され、その時の位相の変移は２×ｎ１×ｄ１／λとな
る。FIG. 4 shows a conceptual diagram of antireflection by an antireflection film 206 formed on a protective glass plate 205. The light wave h incident on the anti-reflection film 206 is
Surface (that is, the interface 206 between the atmosphere and the antireflection film 206)
a) and reflected at the interface 205a between the antireflection film 206 and the protective glass plate 205. These two interfaces 205a, 2
The reflected lights h1 and h2 generated at 06a have a phase difference of π / 2. Therefore, the net phase displacement of the two reflected lights h1 and h2 is defined as the optical path difference 2 × n1 × d1 when the refractive index of the antireflection film is n1, the thickness is d1, and the wavelength of the light wave h is λ. The phase shift at that time is 2 × n1 × d1 / λ.
【０００８】そして図５の光強度のグラフａ，ｂに示す
ように、２つの反射光ｈ１，ｈ２の正味の位相変位が１
８０°のとき、グラフｃに示すこれらの干渉光ｈ１＋ｈ
２は、完全に打ち消しあう干渉状態となり、光の強度は
０となる。そこで、反射防止膜の屈折率をｎ１、厚さを
ｄ１とした場合下記式（１）を満たすように、反射防止
膜の厚さが設定されることになる。 ｎｌ×ｄ１＝ｍ×λ／４（ｍ：奇数、λ：波長）…（１）As shown in graphs a and b of the light intensity in FIG. 5, the net phase displacement of the two reflected lights h1 and h2 is 1
At 80 °, these interference light h1 + h shown in graph c
No. 2 is in an interference state where it completely cancels out, and the light intensity becomes 0. Therefore, when the refractive index of the antireflection film is n1 and the thickness is d1, the thickness of the antireflection film is set so as to satisfy the following expression (1). nl × d1 = m × λ / 4 (m: odd number, λ: wavelength) (1)
【０００９】[0009]
【発明が解決しようとする課題】ところが、保護ガラス
板を用いた封止構造を実施する場合、真空装置内におい
てガラス基板上に発光素子を形成して表示パネルを作製
した後、表示パネルに対して保護ガラス板の貼り付け
（接着）を行う必要がある。この工程は、表示パネルに
対して保護ガラス板の位置合わせを行う必要があること
や、表示パネルと保護ガラス板との間に気泡が入らない
ようにする必要がある等、非常の手間の掛かる工程とな
っており、表示装置製造の生産性を低下させる要因とな
っている。しかも、保護ガラス板を用いることで表示装
置のコストを上昇させる要因にもなっている。However, when a sealing structure using a protective glass plate is implemented, a light emitting element is formed on a glass substrate in a vacuum device to produce a display panel. It is necessary to attach (adhere) the protective glass plate. This process is very time-consuming, for example, it is necessary to align the protective glass plate with the display panel, and it is necessary to prevent air bubbles from entering between the display panel and the protective glass plate. This is a process, which is a factor that lowers the productivity of manufacturing a display device. In addition, the use of the protective glass plate causes a rise in the cost of the display device.
【００１０】さらに、保護ガラス板に対して予め反射防
止膜が形成されていない場合には、表示パネルに対して
保護ガラス板を貼り付けた後に、保護ガラス板の表面に
反射防止膜を形成するため、再び表示パネルを真空装置
に入れなければならず、さらに生産性の低下を引き起こ
すことになる。またこの場合には、表示パネルを真空装
置に出し入れする際に、表示パネルに対して挨やパーテ
ィクルが付着し歩留まりの低下を引き起こす要因にな
る。Further, when an anti-reflection film is not formed in advance on the protective glass plate, the anti-reflection film is formed on the surface of the protective glass plate after attaching the protective glass plate to the display panel. Therefore, the display panel must be put into the vacuum device again, which further lowers productivity. Further, in this case, when the display panel is taken in and out of the vacuum device, greetings and particles adhere to the display panel, which causes a reduction in yield.
【００１１】そこで本発明は、生産性の向上とコストの
低減を図ることが可能な表示装置及びその製造方法を提
供することを目的とする。Accordingly, an object of the present invention is to provide a display device capable of improving productivity and reducing costs, and a method of manufacturing the same.
【００１２】[0012]
【課題を解決するための手段】このような目的を達成す
るための本発明の表示装置は、基板上に設けられた発光
素子と、この発光素子に接する状態で基板上に成膜され
た透明材料からなる封止膜と、この封止膜の屈折率より
も低く大気の屈折率よりも高い屈折率を有する材料から
なり封止膜の表面上に大気に接する状態で成膜された反
射防止膜とを備えたことを特徴としている。封止膜は多
層膜であっても良い。In order to achieve the above object, a display device according to the present invention comprises a light emitting device provided on a substrate and a transparent film formed on the substrate in contact with the light emitting device. An anti-reflection film formed of a sealing film made of a material and a material having a refractive index lower than the refractive index of the sealing film and higher than the refractive index of the atmosphere and formed on the surface of the sealing film in contact with the atmosphere. And a membrane. The sealing film may be a multilayer film.
【００１３】また、本発明の表示装置の製造方法は、基
板上に形成された発光素子に接する状態で基板上に透明
な封止膜を成膜した後、この封止膜の表面上に封止膜の
屈折率よりも低く大気の屈折率よりも高い屈折率を有す
る材料からなる反射防止膜を成膜することを特徴として
いる。Further, according to the method of manufacturing a display device of the present invention, a transparent sealing film is formed on a substrate in a state of being in contact with a light emitting element formed on the substrate, and the sealing film is formed on the surface of the sealing film. The present invention is characterized in that an antireflection film made of a material having a refractive index lower than the refractive index of the stop film and higher than the refractive index of the atmosphere is formed.
【００１４】このような構成の表示装置及びその製造方
法では、基板上の発光素子に接する状態で成膜された透
明な封止膜の表面上に、封止膜の屈折率よりも低く大気
の屈折率よりも高い屈折率を有する材料からなる反射防
止膜が成膜されるため、発光素子での発光光が封止膜と
反射防止膜との界面において多重干渉することなく、反
射防止膜側から効率良く取り出されると共に、封止膜表
面での外光反射が防止され、表示機能が確保される。し
かも、発光素子上には成膜によって得られる封止膜及び
反射防止膜のみを設けた構成としたことで、封止用のガ
ラス基板を接着することなく、発光素子を封止し、かつ
表示機能を確保した表示装置が構成される。In the display device having such a configuration and the method of manufacturing the same, the surface of the transparent sealing film formed in contact with the light emitting element on the substrate has a lower refractive index than that of the atmosphere. Since the anti-reflection film made of a material having a higher refractive index than the refractive index is formed, light emitted from the light-emitting element does not cause multiple interference at the interface between the sealing film and the anti-reflection film. From the surface of the sealing film is prevented, and the display function is secured. Moreover, by providing only the sealing film and the antireflection film obtained by film formation on the light emitting element, the light emitting element can be sealed and the display can be performed without bonding a sealing glass substrate. A display device having functions is configured.
【００１５】[0015]
【発明の実施の形態】以下、本発明の表示装置及びその
製造方法の実施の形態を図面に基づいて説明する。尚こ
こでは、発光素子として有機ＥＬ素子を用いた実施形態
の説明を行うが、本発明は、発光素子として有機ＥＬ素
子を用いたものに限定されることはなく、例えば無機電
界発光素子のような自発光型の発光素子を用いた表示装
置に広く適用可能である。さらに、説明に用いる各図に
おいては、この発明を理解できる程度に、その寸法、形
状及び配置関係を概略的に示しており、同様の構成成分
については同一の番号を付けて示し、その重複する説明
を省略する。また、以下の説明中で挙げる使用材料及び
その量、処理時間、処理温度、膜厚などの数値的条件
は、この発明の範囲内の好適例に過ぎない。従って、こ
の出願による発明は、これら条件にのみ限定されるもの
ではない。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a display device and a method of manufacturing the same according to the present invention will be described with reference to the drawings. Here, an embodiment using an organic EL element as a light-emitting element will be described, but the present invention is not limited to an element using an organic EL element as a light-emitting element. The present invention can be widely applied to a display device using a self-luminous light emitting element. Further, in each of the drawings used for the description, the dimensions, shapes, and arrangement relations are schematically shown to the extent that the present invention can be understood, and the same components are denoted by the same reference numerals, and the same components are overlapped. Description is omitted. Further, numerical conditions such as used materials and their amounts, processing time, processing temperature, and film thickness, which are mentioned in the following description, are merely preferred examples within the scope of the present invention. Therefore, the invention according to this application is not limited only to these conditions.
【００１６】図１は、本実施形態における表示装置の製
造を説明するための断面図工程図であり、この図を用い
て本実施形態の表示装置の構成をその製造工程順に説明
する。FIG. 1 is a sectional view step diagram for explaining the manufacture of the display device according to the present embodiment, and the structure of the display device of the present embodiment will be described in the order of the manufacturing steps with reference to FIG.
【００１７】まず、図１（ａ）に示すように、例えば石
英ガラスからなる基板１０１を用意し、この基板１０１
を洗浄した後、この基板１０１上に陽極パターン１０２
を形成する。この陽極パターン１０２は、例えばＣｒ
（クロム）膜等のように仕事関数の高い材料からなる陽
極膜をスパッタリング法によって成膜し、この陽極膜を
パターニングすることによって形成される。陽極膜のパ
ターニングは、例えば、リソグラフィーによって形成し
たレジストパターンをマスクに用いたウェットエッチン
グによって行う。またここで、各陽極パターン１０２
は、例えば図面状の奥行き方向に並べられたストライプ
状に形成されていることとする。First, as shown in FIG. 1A, a substrate 101 made of, for example, quartz glass is prepared.
After cleaning, the anode pattern 102
To form This anode pattern 102 is made of, for example, Cr
An anode film made of a material having a high work function such as a (chromium) film is formed by a sputtering method, and the anode film is patterned. The patterning of the anode film is performed by, for example, wet etching using a resist pattern formed by lithography as a mask. Here, each anode pattern 102
Are formed, for example, in a stripe shape arranged in the depth direction of the drawing.
【００１８】次に、図１（ｂ）に示すように、この陽極
パターン１０２上に、後に作製される陰極パターンとの
導通を避けるための絶縁層１０３を形成する。ここで
は、例えばスパッタリング法によって酸化シリコン（Ｓ
ｉ０2）膜を８００ｎｍの厚みに成膜した後、リソグラ
フィー法を用いてこの酸化シリコン膜に陽極パターン１
０２に達する開口部１０３ａを形成する。このリソグラ
フィーにおいては、まず、酸化シリコン膜上にレジスト
を塗布し、露光・現像することにより、所望の形状のレ
ジストパターンを作製する。その後、このレジストパタ
ーンをマスクに用いて酸化シリコン膜をウェットエッチ
ングし、これによって酸化シリコン膜に開口部１０３ａ
を設けて成る絶縁層１０３を形成する。酸化シリコン膜
のウェットエッチングに用いるエッチャントは、ＨＦ
（フッ酸）とＮＨ4Ｆ（フッ化アンモニウム）とを混ぜ
合わせた混酸を用いることとする。Next, as shown in FIG. 1B, an insulating layer 103 is formed on the anode pattern 102 to avoid conduction with a cathode pattern to be formed later. Here, for example, silicon oxide (S
i0 2 ) After forming a film having a thickness of 800 nm, the anode pattern 1 was formed on this silicon oxide film by lithography.
An opening 103a that reaches 02 is formed. In this lithography, first, a resist is applied on a silicon oxide film, and is exposed and developed to form a resist pattern having a desired shape. Thereafter, the silicon oxide film is wet-etched using this resist pattern as a mask, thereby opening the opening 103a in the silicon oxide film.
Is formed to form an insulating layer 103. The etchant used for wet etching of the silicon oxide film is HF
A mixed acid obtained by mixing (hydrofluoric acid) and NH 4 F (ammonium fluoride) is used.
【００１９】次に、パターニングされた絶縁層１０３を
有する基板１０１を、純水、２−プロパノールなどを用
いて、順次洗浄を行う。Next, the substrate 101 having the patterned insulating layer 103 is sequentially washed with pure water, 2-propanol, or the like.
【００２０】その後、図１（ｃ）に示すように、洗浄の
済んだ基板１０１を有機ＥＬ層形成用の真空蒸着装置内
に設置し、以下のようにして有機ＥＬ層１０４及び陰極
パターン１０５を形成する。Thereafter, as shown in FIG. 1C, the cleaned substrate 101 is set in a vacuum deposition apparatus for forming an organic EL layer, and the organic EL layer 104 and the cathode pattern 105 are formed as follows. Form.
【００２１】ここではまず、陽極パターン１０２と絶縁
膜層１０３の形成が済んだ基板１０１上に、ここでの図
示を省略した蒸着マスクを載置する。この蒸着マスク
は、ストライプ状の開口部を有し、この開口部が絶縁層
１０３の開口部１０３ａ上に重ね合わされ、かつ開口部
内に絶縁膜１０２の開口部１０３ａが確実に収められる
ように、基板１０１の上方に設けられる。ここでは、蒸
着マスクの開口部が陽極パターン１０２と直行するよう
に、この蒸着マスクが用いられることとする。First, a deposition mask (not shown) is placed on the substrate 101 on which the anode pattern 102 and the insulating film layer 103 have been formed. The evaporation mask has a stripe-shaped opening, and the substrate is overlapped with the opening 103a of the insulating layer 103 so that the opening 103a of the insulating film 102 is securely contained in the opening. It is provided above 101. Here, this evaporation mask is used so that the opening of the evaporation mask is perpendicular to the anode pattern 102.
【００２２】この状態で、真空蒸着法により正孔輸送層
となるトリフェニルアミン誘導体（Ｎ，Ｎ−ジフェニル
−Ｎ，Ｎ−ビス（３−メチルフェニル）−１，１−ビフ
ェニル−４，４−ジアミン：ＴＰＤ）を膜厚５０ｎｍ程
度になるように蒸着形成する。In this state, the triphenylamine derivative (N, N-diphenyl-N, N-bis (3-methylphenyl) -1,1-biphenyl-4,4- Diamine: TPD) is deposited by vapor deposition to a thickness of about 50 nm.
【００２３】引き続き同じ蒸着装置内において、電子輸
送性発光層となるアルミキノリノール錯体（トリス（８
−ヒドロキシキノリノール）アルミニウム：Ａｌｑ３）
を膜厚５０ｎｍになるように蒸着形成する。Subsequently, in the same vapor deposition apparatus, an aluminum quinolinol complex (Tris (8
-Hydroxyquinolinol) aluminum: Alq3)
Is deposited to a thickness of 50 nm.
【００２４】以上によって、正孔輸送層と電子輸送性発
光層とを積層してなる有機ＥＬ層１０４を形成する。こ
の有機ＥＬ層１０４は、絶縁層１０３の開口部１０３ａ
底面において陽極パターン１０２と接する状態で積層形
成される。As described above, the organic EL layer 104 formed by laminating the hole transporting layer and the electron transporting light emitting layer is formed. The organic EL layer 104 is formed in the opening 103 a of the insulating layer 103.
It is formed in a laminated state in contact with the anode pattern 102 on the bottom surface.
【００２５】ここで、「正孔輸送層」とは、仕事関数が
大きな正孔注入電極（陽極）から多量の正孔が注入可能
で、しかも注入された正孔が膜中を移動できる一方、電
子の注入は困難であるか、注入は可能であっても膜中を
移動し難いような性質を持った薄膜層であることとす
る。また、「電子輸送層」とは、仕事関数が小さな電子
注入電極（陰極）から多量の電子が注入可能で、しかも
注入された電子が膜中を移動できる一方、正孔の注入は
困難であるか、注入は可能であっても膜中を移動し難い
ような性質を持った薄膜層であることとする。Here, the “hole transport layer” means that a large amount of holes can be injected from a hole injection electrode (anode) having a large work function, and the injected holes can move through the film. It is assumed that the injection of electrons is difficult, or that the thin film layer has such properties that injection is possible but hard to move in the film. The “electron transport layer” means that a large amount of electrons can be injected from an electron injection electrode (cathode) having a small work function, and the injected electrons can move through the film, but it is difficult to inject holes. Alternatively, it is a thin film layer having such a property that it can be implanted but hardly moves in the film.
【００２６】次に、有機ＥＬ層上１０４上に真空蒸着法
（例えば抵抗加熱蒸着法）によって陰極膜を蒸着成膜
し、これによって陽極パターン１０２と直行するストラ
イプ状の陰極パターン１０５を形成する。ここで、陰極
膜としては仕事関数の小さい材料を用いることとし、そ
の中でも特に、この表示装置を上面発光方式とする場合
には、例えばＭｇ−Ａｇ（マグネシウムと銀との合金）
のような光を透過する材料を用いることとする。Next, a cathode film is formed on the organic EL layer 104 by a vacuum evaporation method (for example, a resistance heating evaporation method), thereby forming a striped cathode pattern 105 perpendicular to the anode pattern 102. Here, a material having a small work function is used as the cathode film. Among them, particularly when the display device is of a top emission type, for example, Mg-Ag (an alloy of magnesium and silver) is used.
A material that transmits light such as
【００２７】以上のようにして、陽極パターン１０２と
陰極パターン１０５との間に有機ＥＬ層１０４を挟持し
てなる各発光素子１０６を形成する。尚、発光素子１０
６の構成は、陽極パターン１０２上に有機ＥＬ層１０４
および陰極パターン１０５を順次積層した構成に限定さ
れることはなく、陰極パターン上に有機ＥＬ層および陽
極パターンを順次積層した構成であっても良い。ただし
この場合、有機ＥＬ層を構成する正孔輸送層、電子輸送
層、発光層などは適宜選択された順序で積層されること
とする。また、陽極パターン１０２は、光を透過する材
料を用いて構成されることとする。As described above, each light emitting element 106 having the organic EL layer 104 sandwiched between the anode pattern 102 and the cathode pattern 105 is formed. The light emitting element 10
In the configuration of No. 6, the organic EL layer 104 is formed on the anode pattern 102.
The configuration is not limited to the configuration in which the cathode patterns 105 are sequentially laminated, and may be a configuration in which an organic EL layer and an anode pattern are sequentially laminated on the cathode pattern. However, in this case, the hole transport layer, the electron transport layer, the light emitting layer, and the like that constitute the organic EL layer are laminated in an appropriately selected order. The anode pattern 102 is formed using a material that transmits light.
【００２８】次に、図１（ｄ）に示すように、この発光
素子１０６を覆う状態で、基板１０１上に封止膜１０７
を成膜する。封止膜１０７は、透明材料からなり、発光
素子１０の露出表面や絶縁層１０３に対して付着強度が
強く、かつ緻密な膜質を有して酸素や水分を封止する効
果が高く、しかも有機ＥＬ層１０４や陰極パターン１０
５など損傷を与えずに成膜可能な材料で構成することと
する。そして特に、封止膜１０７は、基板１０１上に直
接成膜できる膜であることとする。ここで基板１０１上
に直接成膜できる膜とは、例えば塗布成膜、蒸着成膜、
ＣＶＤ膜、スパッタ成膜などによって基板１０１上にお
いて生成される膜であることとする。Next, as shown in FIG. 1D, a sealing film 107 is formed on the substrate 101 so as to cover the light emitting element 106.
Is formed. The sealing film 107 is made of a transparent material, has a strong adhesive strength to the exposed surface of the light emitting element 10 and the insulating layer 103, has a dense film quality, has a high effect of sealing oxygen and moisture, and has an organic property. EL layer 104 and cathode pattern 10
It is made of a material that can form a film without causing damage, such as 5. In particular, the sealing film 107 is a film that can be formed directly on the substrate 101. Here, the film that can be directly formed on the substrate 101 includes, for example, coating film formation, vapor deposition film formation,
The film is formed on the substrate 101 by a CVD film, a sputter film, or the like.
【００２９】そこでここでは、一例として、減圧ＣＶＤ
法によって、窒化シリコン（ＳｉＮｘ）からなる封止膜
１０７を所望の厚さになるように成膜する。この封止膜
１０７の膜厚は、発光素子１０６を十分に封止でき、か
つ保護できる程度に設定されることとする。Therefore, here, as an example, low pressure CVD
By a method, a sealing film 107 made of silicon nitride (SiNx) is formed to a desired thickness. The thickness of the sealing film 107 is set to such a degree that the light emitting element 106 can be sufficiently sealed and protected.
【００３０】また、この封止膜１０７は、単層構造に限
定されることはなく、窒化シリコン膜間に酸化シリコン
膜を挟持してなる多層膜や、樹脂膜、さらには窒化シリ
コン膜、酸化シリコン膜、樹脂膜を積層させた多層膜で
あっても良い。The sealing film 107 is not limited to a single layer structure, but may be a multilayer film having a silicon oxide film sandwiched between silicon nitride films, a resin film, a silicon nitride film, It may be a multilayer film in which a silicon film and a resin film are laminated.
【００３１】次いで、この封止膜１０７上に、反射防止
膜１０８を成膜する。この反射防止膜１０８として求め
られる条件は、屈折率が、大気の屈折率（ｎ＝１．０）
と反射防止膜１０７（例えば窒化シリコン：ＳｉＮｘ）
の屈折率（ｎ＝１．９）との間にあり、従来の技術で述
べた前述の式（１）を満たす厚さを有していることとす
る。Next, an antireflection film 108 is formed on the sealing film 107. The condition required for the antireflection film 108 is that the refractive index is the refractive index of the atmosphere (n = 1.0).
And antireflection film 107 (for example, silicon nitride: SiNx)
And the thickness satisfies the above-described formula (1) described in the related art.
【００３２】具体的には、例えば、封止膜１０７を窒化
シリコンで構成した場合には、酸化シリコン（Ｓｉ
０2：屈折率ｎ＝１．５）が適している。酸化シリコン
からなる反射防止膜１０８の形成方法は、真空蒸着法、
ＴＥＯＳ法など様々な方法があるが、Ｐ（プラズマ）−
ＣＶＤ法で作成した酸化シリコン膜は、吸湿性も低く、
反射防止膜１０８として適している。また、反射防止膜
１０８としては、酸化シリコンに限定されることはな
く、この他にも例えばフッ化マグネシウム（ＭｇＦ2：
屈折率＝１．３８）を用いても良い。Specifically, for example, when the sealing film 107 is made of silicon nitride, silicon oxide (Si
O 2 : refractive index n = 1.5) is suitable. The method of forming the antireflection film 108 made of silicon oxide includes a vacuum evaporation method,
Although there are various methods such as the TEOS method, P (plasma)-
The silicon oxide film formed by the CVD method has low hygroscopicity,
It is suitable as the anti-reflection film 108. Further, the anti-reflection film 108 is not limited to silicon oxide, but may be, for example, magnesium fluoride (MgF 2 :
(Refractive index = 1.38) may be used.
【００３３】また、反射防止膜１０８は、封止膜１０７
が多層膜である場合には、封止膜１０７の各層を構成す
る材料よりも屈折率が低い材料からなり、基板１０１上
に直接成膜できる膜であれば良い。ここで基板１０１上
に直接成膜できる膜とは、例えば塗布成膜、蒸着成膜、
ＣＶＤ膜、スパッタ成膜などによって基板１０１上にお
いて生成される膜であることとする。Further, the anti-reflection film 108 is formed of the sealing film 107.
Is a multilayer film, any film may be used as long as it is made of a material having a lower refractive index than the material constituting each layer of the sealing film 107 and can be formed directly on the substrate 101. Here, the film that can be directly formed on the substrate 101 includes, for example, coating film formation, vapor deposition film formation,
The film is formed on the substrate 101 by a CVD film, a sputter film, or the like.
【００３４】以上のようにして、最上層が反射防止膜１
０８で覆われた表示装置１が作製される。As described above, the uppermost layer is the antireflection film 1
The display device 1 covered with 08 is manufactured.
【００３５】このようにして得られた表示装置１は、基
板１０１上の発光素子１０６に接する状態で成膜された
透明な封止膜１０８の表面上に、封止膜１０８の屈折率
よりも低く大気の屈折率よりも高い屈折率を有する材料
からなる反射防止膜１０９が成膜されるため、発光素子
１０６で生じる発光光が封止膜１０８において多重干渉
することなく、反射防止膜１０９側から効率良く取り出
される。また、封止膜１０８表面での外光反射が防止さ
れ、表示機能が確保される。しかも、発光素子１０６上
には成膜によって得られる封止膜１０８及び反射防止膜
１０９のみを設けた構成となっているため、封止用のガ
ラス基板を接着する（貼り付ける）といった手間の掛か
る工程を行うことなく、発光素子１０６を封止し、かつ
表示機能を確保した表示装置を得ることができる。この
結果、表示装置製造の生産性の向上およびコストの低減
を図ることが可能になる。In the display device 1 thus obtained, the refractive index of the sealing film 108 is higher than that of the sealing film 108 on the surface of the transparent sealing film 108 formed in contact with the light emitting element 106 on the substrate 101. Since the anti-reflection film 109 made of a material having a low refractive index higher than the refractive index of the atmosphere is formed, light emitted from the light-emitting element 106 does not cause multiple interference in the sealing film 108, and the anti-reflection film 109 side Efficiently extracted from In addition, reflection of external light on the surface of the sealing film 108 is prevented, and the display function is ensured. In addition, since only the sealing film 108 and the antireflection film 109 obtained by film formation are provided on the light-emitting element 106, it takes time to attach (attach) a glass substrate for sealing. A display device in which the light-emitting element 106 is sealed and a display function is secured can be obtained without performing a step. As a result, it is possible to improve the productivity and reduce the cost of manufacturing the display device.
【００３６】尚、以上の実施形態においては、発光素子
の構成を単色の有機ＥＬ素子にしているが、工程を複数
回繰り返す事によりＲＧＢの揃ったフルカラーの有機Ｅ
Ｌ素子を用いたディスプレイにも適用できる。また、以
上の実施形態では、ストライプ状に配列形成された陽極
パターンに対して複数本の陰極パターンを直交させる状
態でストライプ状に配列形成させたパッシブマトリック
ス型の表示装置に本発明を適用した場合を説明した。し
かし、陽極パターン及び陰極パターンの形状は、ストラ
イプ状に限定されることはなく、多種多様な形状の微細
なパターンで形成しても良い。In the above embodiment, the light emitting element is configured as a single-color organic EL element. However, by repeating the process a plurality of times, a full-color organic EL element with uniform RGB is obtained.
The present invention can be applied to a display using an L element. In the above embodiment, the present invention is applied to a passive matrix type display device in which a plurality of cathode patterns are arranged in a stripe shape in a state of being orthogonal to an anode pattern arranged in a stripe shape. Was explained. However, the shapes of the anode pattern and the cathode pattern are not limited to the stripe shape, and they may be formed by fine patterns of various shapes.
【００３７】また、本発明は、実施形態で説明したよう
なパッシブマトリックス型の表示装置に限定されること
はなく、基板上に薄膜トランジスタ（thin film transi
stor：ＴＦＴ）を設け、このＴＦＴに陽極パターンを接
続させたアクティブマトリックス型の表示装置にも適用
可能であり、同様の効果を得ることができる。The present invention is not limited to a passive matrix type display device as described in the embodiment, but includes a thin film transistor on a substrate.
stor: TFT), and the TFT can be applied to an active matrix type display device in which an anode pattern is connected to the TFT, and the same effect can be obtained.
【００３８】この場合、図２に示すように、基板１０１
は、例えば石英ガラス上にここでの図示を省略したＴＦ
Ｔが形成され、これを覆う状態で平坦化絶縁膜が形成さ
れたＴＦＴ基板となる。そして、この平坦化絶縁膜で覆
われた基板（ＴＦＴ基板）１０１上に、陽極パターン１
０２が形成されることになる。各陽極パターン１０２
は、画素毎に設けられ、同様に画素毎に設けられたＴＦ
Ｔに対して、層間絶縁膜に形成されたコンタクトホール
（図示省略）を介してそれぞれが接続された状態で形成
されることとする。そして、この陽極パターン１０２上
に開口部を有する絶縁膜１０３が設けられ、この開口部
を介して陽極パターン１０２上に有機ＥＬ層１０４が設
けられ、この有機ＥＬ層１０４を覆う状態で基板１０１
上にベタ膜状の陰極パターン（陰極）１０５が設けられ
る。この陰極パターン１０５は、各画素の共通電極とな
る。In this case, as shown in FIG.
Is, for example, TF not shown here on quartz glass.
T is formed, and a flattened insulating film is formed on the TFT substrate so as to cover the T. Then, an anode pattern 1 is formed on the substrate (TFT substrate) 101 covered with the planarizing insulating film.
02 will be formed. Each anode pattern 102
Is a TF provided for each pixel, and a TF is similarly provided for each pixel.
T is formed in a state where they are connected to each other via a contact hole (not shown) formed in the interlayer insulating film. An insulating film 103 having an opening is provided on the anode pattern 102, an organic EL layer 104 is provided on the anode pattern 102 through the opening, and the substrate 101 is covered with the organic EL layer 104.
A solid film-like cathode pattern (cathode) 105 is provided thereon. This cathode pattern 105 becomes a common electrode of each pixel.
【００３９】以上のように、アクティブマトリックス型
の表示装置においては、ＴＦＴに接続された陽極パター
ン１０２とベタ膜状の陰極パターン１０５との間に、有
機ＥＬ層１０４を挟持してなる各発光素子１０６が、基
板１０１上に配列形成されることになる。そして、これ
らの各発光素子１０６を覆う状態で、上述した構成の封
止膜１０８と反射防止膜１０９とが基板１０１上に設け
られる。尚、封止膜１０８および反射防止膜１０９だけ
ではなく、陽極パターン１０２、有機ＥＬ層１０４およ
び陰極パターン１０５の構成も、上述した実施形態にお
いて説明したパッシブマトリックス型の表示装置と同様
であることとする。さらに、パッシブマトリックス型の
表示装置と同様に、発光素子１０６の構成は、陽極パタ
ーン１０２上に有機ＥＬ層１０４および陰極パターン１
０５を順次積層した構成に限定されることはなく、陰極
パターン上に有機ＥＬ層およびベタ膜状の陽極パターン
を順次積層した構成であっても良い。As described above, in the active matrix type display device, each light emitting element in which the organic EL layer 104 is interposed between the anode pattern 102 connected to the TFT and the solid film-shaped cathode pattern 105 is provided. 106 will be arrayed on the substrate 101. Then, the sealing film 108 and the antireflection film 109 having the above-described configuration are provided on the substrate 101 so as to cover these light emitting elements 106. The configurations of the anode pattern 102, the organic EL layer 104, and the cathode pattern 105 as well as the sealing film 108 and the antireflection film 109 are the same as those of the passive matrix display device described in the above-described embodiment. I do. Further, similarly to the passive matrix type display device, the structure of the light emitting element 106 is such that the organic EL layer 104 and the cathode pattern 1 are formed on the anode pattern 102.
The configuration is not limited to the configuration in which the organic EL layers 05 are sequentially laminated, and may be a configuration in which an organic EL layer and a solid film-shaped anode pattern are sequentially laminated on a cathode pattern.
【００４０】[0040]
【発明の効果】以上説明したように本発明の表示装置及
びその製造方法によれば、保護ガラスを設けることな
く、成膜によって得られる封止膜と反射防止膜のみによ
って、発光素子の封止と外光反射の防止による表示機能
の確保を実現する構成としたことで、保護ガラス板を貼
り付ける工程を省略することができ、表示装置の製造工
程を簡略化して生産性の向上及びコストの削減を図るこ
とが可能になる。As described above, according to the display device and the method of manufacturing the same of the present invention, the sealing of the light emitting element is achieved only by the sealing film and the antireflection film obtained by forming the film without providing the protective glass. And a structure that realizes a display function by preventing external light reflection, the step of attaching a protective glass plate can be omitted, and the manufacturing process of the display device can be simplified to improve productivity and reduce cost. Reduction can be achieved.
【図１】実施形態における表示装置の製造を説明するた
めの断面図工程図である。FIG. 1 is a cross-sectional view process drawing for explaining manufacturing of a display device in an embodiment.
【図２】本発明の表示装置における他の構成例（アクテ
ィブマトリックス型）を示す断面図である。FIG. 2 is a cross-sectional view showing another configuration example (active matrix type) in the display device of the present invention.
【図３】従来の表示装置の断面構成図である。FIG. 3 is a cross-sectional configuration diagram of a conventional display device.
【図４】保護ガラス板上に形成した反射防止膜による反
射防止の概念図である。FIG. 4 is a conceptual diagram of antireflection by an antireflection film formed on a protective glass plate.
【図５】位相変位による反射光の干渉を説明する光強度
のグラフである。FIG. 5 is a graph of light intensity illustrating interference of reflected light due to phase displacement.
１…表示装置、１０１…基板、１０６…発光素子、１０
８…封止膜、１０９…反射防止膜DESCRIPTION OF SYMBOLS 1 ... Display apparatus, 101 ... Substrate, 106 ... Light emitting element, 10
8 sealing film, 109 antireflection film
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０５Ｂ 33/28 Ｈ０５Ｂ 33/28 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H05B 33/28 H05B 33/28
Claims (4)
明な封止膜と、 前記封止膜の屈折率よりも低く大気の屈折率よりも高い
屈折率を有する材料からなり、当該封止膜の表面上に大
気に接する状態で成膜された反射防止膜とを備えたこと
を特徴とする表示装置。1. A light emitting element provided on a substrate, a transparent sealing film formed on the substrate in contact with the light emitting element, and refraction of the atmosphere lower than a refractive index of the sealing film. A display device comprising: a material having a refractive index higher than the refractive index; and an anti-reflection film formed on the surface of the sealing film in contact with the atmosphere.
り出されることを特徴とする表示装置。2. The display device according to claim 1, wherein light emitted from the light emitting element is extracted from the antireflection film.
折率の低い材料からなることを特徴とする表示装置。3. The display device according to claim 1, wherein the sealing film is a multilayer film, and the antireflection film is made of a material having a lower refractive index than each of the layers constituting the sealing film. Display device.
態で、当該基板上に透明な封止膜を成膜する工程と、 前記封止膜の表面上に、当該封止膜の屈折率よりも低く
大気の屈折率よりも高い屈折率を有する材料からなる反
射防止膜を成膜する工程とを行うことを特徴とする表示
装置の製造方法。4. A step of forming a transparent sealing film on the substrate in contact with a light emitting element formed on the substrate; and a refractive index of the sealing film on a surface of the sealing film. Forming an antireflection film made of a material having a lower refractive index than the atmospheric refractive index.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001163958A JP2002252082A (en) | 2000-12-21 | 2001-05-31 | Display device and its manufacturing method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-388426 | 2000-12-21 | ||
| JP2000388426 | 2000-12-21 | ||
| JP2001163958A JP2002252082A (en) | 2000-12-21 | 2001-05-31 | Display device and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002252082A true JP2002252082A (en) | 2002-09-06 |
Family
ID=26606254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001163958A Pending JP2002252082A (en) | 2000-12-21 | 2001-05-31 | Display device and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002252082A (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003096758A1 (en) * | 2002-05-10 | 2003-11-20 | Seiko Epson Corporation | Light emitting device and electronic apparatus |
| JP2005026193A (en) * | 2003-07-03 | 2005-01-27 | Fuji Electric Holdings Co Ltd | Organic el light emitting element |
| JP2005038633A (en) * | 2003-07-16 | 2005-02-10 | Pioneer Electronic Corp | Organic electroluminescent display panel |
| JP2005063850A (en) * | 2003-08-14 | 2005-03-10 | Ran Technical Service Kk | Organic el display panel and its manufacturing method |
| JP2005203196A (en) * | 2004-01-14 | 2005-07-28 | Fuji Electric Holdings Co Ltd | Passive matrix drive top emission type organic el element and its manufacturing method |
| JP2006156396A (en) * | 2004-11-29 | 2006-06-15 | Samsung Sdi Co Ltd | Flat display device and its manufacturing method |
| JP2006164543A (en) * | 2004-12-02 | 2006-06-22 | Serubakku:Kk | Sealing film of organic el element, organic el display panel, and its manufacturing method |
| JP2006261058A (en) * | 2005-03-18 | 2006-09-28 | Sony Corp | Organic el element, display device, and manufacturing method of organic el element |
| JP2007280964A (en) * | 2003-02-24 | 2007-10-25 | Sony Corp | Organic light-emitting display device and its manufacturing method |
| JP2009117343A (en) * | 2007-10-18 | 2009-05-28 | Seiko Epson Corp | Light emitting device and electronic equipment |
| US7608991B2 (en) | 2004-11-16 | 2009-10-27 | Kyocera Corporation | Light emitting device |
| JP2012199222A (en) * | 2011-03-21 | 2012-10-18 | Samsung Mobile Display Co Ltd | Organic light-emitting display device |
| JP2014096385A (en) * | 2004-05-20 | 2014-05-22 | Semiconductor Energy Lab Co Ltd | Light-emitting element |
| JP2015195094A (en) * | 2014-03-31 | 2015-11-05 | 株式会社ジャパンディスプレイ | organic EL display device |
| US9257678B2 (en) | 2012-10-24 | 2016-02-09 | Japan Display Inc. | Organic luminescent display device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11511895A (en) * | 1996-06-05 | 1999-10-12 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | Non-degenerate wide bandgap semiconductors as injection layers and / or contact electrodes for organic electroluminescent devices |
| WO2000008899A1 (en) * | 1998-08-03 | 2000-02-17 | Uniax Corporation | Encapsulation of polymer-based solid state devices with inorganic materials |
| WO2000041892A1 (en) * | 1999-01-15 | 2000-07-20 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
| JP2000223264A (en) * | 1999-01-29 | 2000-08-11 | Pioneer Electronic Corp | Organic electroluminescent element and manufacture thereof |
| JP2001203393A (en) * | 2000-01-19 | 2001-07-27 | Matsushita Electric Works Ltd | Light-emitting diode |
-
2001
- 2001-05-31 JP JP2001163958A patent/JP2002252082A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11511895A (en) * | 1996-06-05 | 1999-10-12 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | Non-degenerate wide bandgap semiconductors as injection layers and / or contact electrodes for organic electroluminescent devices |
| WO2000008899A1 (en) * | 1998-08-03 | 2000-02-17 | Uniax Corporation | Encapsulation of polymer-based solid state devices with inorganic materials |
| WO2000041892A1 (en) * | 1999-01-15 | 2000-07-20 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
| JP2002534782A (en) * | 1999-01-15 | 2002-10-15 | スリーエム イノベイティブ プロパティズ カンパニー | Thermal transfer element for forming multilayer devices |
| JP2000223264A (en) * | 1999-01-29 | 2000-08-11 | Pioneer Electronic Corp | Organic electroluminescent element and manufacture thereof |
| JP2001203393A (en) * | 2000-01-19 | 2001-07-27 | Matsushita Electric Works Ltd | Light-emitting diode |
Cited By (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7242140B2 (en) | 2002-05-10 | 2007-07-10 | Seiko Epson Corporation | Light emitting apparatus including resin banks and electronic device having same |
| JPWO2003096758A1 (en) * | 2002-05-10 | 2005-09-15 | セイコーエプソン株式会社 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
| US7710027B2 (en) | 2002-05-10 | 2010-05-04 | Seiko Epson Corporation | Light emitting apparatus including resin banks and electronic device having same |
| WO2003096758A1 (en) * | 2002-05-10 | 2003-11-20 | Seiko Epson Corporation | Light emitting device and electronic apparatus |
| JP2007280964A (en) * | 2003-02-24 | 2007-10-25 | Sony Corp | Organic light-emitting display device and its manufacturing method |
| JP2005026193A (en) * | 2003-07-03 | 2005-01-27 | Fuji Electric Holdings Co Ltd | Organic el light emitting element |
| JP2005038633A (en) * | 2003-07-16 | 2005-02-10 | Pioneer Electronic Corp | Organic electroluminescent display panel |
| JP2005063850A (en) * | 2003-08-14 | 2005-03-10 | Ran Technical Service Kk | Organic el display panel and its manufacturing method |
| JP2005203196A (en) * | 2004-01-14 | 2005-07-28 | Fuji Electric Holdings Co Ltd | Passive matrix drive top emission type organic el element and its manufacturing method |
| JP2020205263A (en) * | 2004-05-20 | 2020-12-24 | 株式会社半導体エネルギー研究所 | Light emitting device |
| JP2015213090A (en) * | 2004-05-20 | 2015-11-26 | 株式会社半導体エネルギー研究所 | Light emitting device |
| JP2017084834A (en) * | 2004-05-20 | 2017-05-18 | 株式会社半導体エネルギー研究所 | Light-emitting element |
| JP2021185585A (en) * | 2004-05-20 | 2021-12-09 | 株式会社半導体エネルギー研究所 | Light emitting device |
| US9614012B2 (en) | 2004-05-20 | 2017-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
| US9349775B2 (en) | 2004-05-20 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
| US11063236B2 (en) | 2004-05-20 | 2021-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
| JP2014096385A (en) * | 2004-05-20 | 2014-05-22 | Semiconductor Energy Lab Co Ltd | Light-emitting element |
| US9105855B2 (en) | 2004-05-20 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
| JP2019021641A (en) * | 2004-05-20 | 2019-02-07 | 株式会社半導体エネルギー研究所 | Light emitting device |
| US11683952B2 (en) | 2004-05-20 | 2023-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
| JP2015233009A (en) * | 2004-05-20 | 2015-12-24 | 株式会社半導体エネルギー研究所 | Light-emitting element |
| US10784465B2 (en) | 2004-05-20 | 2020-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device having white light emission |
| US7608991B2 (en) | 2004-11-16 | 2009-10-27 | Kyocera Corporation | Light emitting device |
| JP2006156396A (en) * | 2004-11-29 | 2006-06-15 | Samsung Sdi Co Ltd | Flat display device and its manufacturing method |
| US7495385B2 (en) | 2004-11-29 | 2009-02-24 | Samsung Mobile Display Co., Ltd. | Flat panel display |
| JP2006164543A (en) * | 2004-12-02 | 2006-06-22 | Serubakku:Kk | Sealing film of organic el element, organic el display panel, and its manufacturing method |
| JP2006261058A (en) * | 2005-03-18 | 2006-09-28 | Sony Corp | Organic el element, display device, and manufacturing method of organic el element |
| JP2009117343A (en) * | 2007-10-18 | 2009-05-28 | Seiko Epson Corp | Light emitting device and electronic equipment |
| JP2012199222A (en) * | 2011-03-21 | 2012-10-18 | Samsung Mobile Display Co Ltd | Organic light-emitting display device |
| US9257678B2 (en) | 2012-10-24 | 2016-02-09 | Japan Display Inc. | Organic luminescent display device |
| JP2015195094A (en) * | 2014-03-31 | 2015-11-05 | 株式会社ジャパンディスプレイ | organic EL display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8704253B2 (en) | Light-emitting device and organic electroluminescence light-emitting device | |
| KR101648016B1 (en) | Organic optoelectronic device and a method for encapsulating said device | |
| KR100527187B1 (en) | high efficiency OLED and Method for fabricating the same | |
| US7470610B2 (en) | Method of fabricating organic electroluminescent devices | |
| JP4385563B2 (en) | ORGANIC EL ELEMENT, ITS MANUFACTURING METHOD, AND DISPLAY DEVICE | |
| JP2002252082A (en) | Display device and its manufacturing method | |
| US20110042702A1 (en) | Organic Light Emitting Device and Method for Manufacturing the Same | |
| JP2000077192A (en) | Organic electroluminescent panel and manufacture thereof | |
| JP4917833B2 (en) | Organic EL display and manufacturing method thereof | |
| JP2007250370A (en) | Organic luminescent element, and its manufacturing method | |
| US7573070B2 (en) | Organic light emitting display and method of fabricating the same | |
| JP2009110780A (en) | Organic electroluminescent display panel, and manufacturing method thereof | |
| JP4048830B2 (en) | Organic electronic device elements | |
| JP2008218081A (en) | Organic el device array and its manufacturing method | |
| US20070054149A1 (en) | Substrate assembly of a display device and method of manufacturing the same | |
| US7772018B2 (en) | Organic electro luminescent display and manufacturing method thereof | |
| JP2004119197A (en) | Organic el panel, its manufacturing method, electrooptical panel and electronic equipment using the same | |
| JPH10106746A (en) | Electroluminescent element and manufacture of electroluminescent element | |
| JP2002231443A (en) | Display device | |
| KR20060041667A (en) | Panel substrate, display panel, organic el panel, and method of manufacturing the same | |
| JP2005174726A (en) | Organic el element and its forming method | |
| EP1511095A2 (en) | Organic electroluminescent device and method of manufacturing the same | |
| JP2004152738A (en) | Organic el panel, its manufacturing method, and electro-optic panel and electronic device using the same | |
| US7298082B2 (en) | Organic electroluminescent display device with projecting structure layer | |
| WO2020206642A1 (en) | Oled touch screen and manufacturing method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080317 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20091021 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20091026 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20091104 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100407 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100531 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100810 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101004 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101102 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110303 |