JP2002205180A5 - Laser processing method and laser processing apparatus - Google Patents
Laser processing method and laser processing apparatus Download PDFInfo
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【０００６】
【課題を解決するための手段】
本発明に係るレーザ加工方法は、ウェハ状の加工対象物の内部に集光点を合わせてレーザ光を照射することにより、加工対象物の切断予定ラインに沿って加工対象物の内部に多光子吸収による改質領域を形成し、かつ、加工対象物に入射するレーザ光の入射方向においてレーザ光の集光点の位置を変えることにより、改質領域を入射方向に沿って並ぶように複数形成し、複数形成された改質領域によって、加工対象物の切断予定ラインに沿って加工対象物のレーザ光入射面から所定距離内側に、切断の起点となる領域を形成する、ことを特徴とする。
[0006]
[Means for Solving the Problems]
In the laser processing method according to the present invention, a plurality of photons are formed inside a processing target along a line to be cut of the processing target by irradiating a laser beam while aligning a condensing point inside the processing target in the form of a wafer. A plurality of modified regions are formed along the incident direction by forming a modified region by absorption and changing the position of the laser light focusing point in the incident direction of the laser beam incident on the processing object And forming a region serving as a starting point of cutting within a predetermined distance from the laser light incident surface of the processing object along the planned cutting line of the processing object by the plurality of reformed regions formed. .
本発明に係るレーザ加工方法は、ウェハ状の加工対象物の内部に集光点を合わせてレーザ光を照射することにより、加工対象物の切断予定ラインに沿って加工対象物の内部に改質領域を形成し、かつ、加工対象物に入射するレーザ光の入射方向においてレーザ光の集光点の位置を変えることにより、改質領域を入射方向に沿って並ぶように複数形成し、複数形成された改質領域によって、加工対象物の切断予定ラインに沿って加工対象物のレーザ光入射面から所定距離内側に、切断の起点となる領域を形成する、ことを特徴とする。また、本発明に係るレーザ加工方法は、 ウェハ状の加工対象物の内部に集光点を合わせて、集光点におけるピークパワー密度が１×１０８（Ｗ／ｃｍ２）以上でかつパルス幅が１μｓ以下の条件でレーザ光を照射することにより、加工対象物の切断予定ラインに沿って加工対象物の内部に改質領域を形成し、かつ、加工対象物に入射するレーザ光の入射方向においてレーザ光の集光点の位置を変えることにより、改質領域を入射方向に沿って並ぶように複数形成し、複数形成された改質領域によって、加工対象物の切断予定ラインに沿って加工対象物のレーザ光入射面から所定距離内側に、切断の起点となる領域を形成する、ことを特徴とする。
In the laser processing method according to the present invention, the inside of the object to be processed is reformed to the inside of the object to be processed along the planned cutting line of the object by aligning the condensing point to the inside of the object to be processed A plurality of reformed regions are formed along the incident direction by forming the regions and changing the position of the focusing point of the laser light in the incident direction of the laser beam incident on the processing object, and a plurality of reformed regions are formed. An area serving as a starting point of cutting is formed inside the predetermined distance from the laser light incident surface of the processing object along the planned cutting line of the processing object by the modified region. In the laser processing method according to the present invention, the focusing point is matched to the inside of the wafer-like processing object, and the peak power density at the focusing point is 1 × 10 8 (W / cm 2 ) or more and the pulse width. By irradiating a laser beam under the condition of 1 μs or less, a reformed region is formed inside the processing object along the planned cutting line of the processing object, and the incident direction of the laser light incident on the processing object By changing the position of the focusing point of the laser light in step, a plurality of reformed areas are formed along the incident direction, and a plurality of reformed areas are processed along the planned cutting line of the processing object An area serving as a starting point of cutting is formed inside a predetermined distance from the laser light incident surface of the object.
本発明に係るレーザ加工方法には以下の態様がある。まず、複数形成される改質領域は一列ずつ順次形成される、ようにすることができる。
The laser processing method according to the present invention has the following aspects. First, a plurality of reformed regions can be formed sequentially, line by line.
また、複数形成される改質領域は、レーザ光入射面に対して遠い方から順に形成される、ようにすることができる。これによれば、入射面とレーザ光の集光点との間に改質領域がない状態で複数の改質領域を形成できる。よって、レーザ光が既に形成された改質領域により散乱されることはないので、各改質領域を均一に形成することができる。
Further, the plurality of modified regions can be formed in order from the side far from the laser light incident surface. According to this, it is possible to form a plurality of modified regions in a state where there is no modified region between the incident surface and the condensing point of the laser light. Therefore, since the laser beam is not scattered by the already formed modified regions, each modified region can be formed uniformly.
Claims (8)
前記加工対象物に入射するレーザ光の入射方向においてレーザ光の集光点の位置を変えることにより、前記改質領域を前記入射方向に沿って並ぶように複数形成し、
複数形成された前記改質領域によって、前記加工対象物の切断予定ラインに沿って前記加工対象物のレーザ光入射面から所定距離内側に、切断の起点となる領域を形成する、レーザ加工方法。A focused area is aligned on the inside of a wafer-like object to be processed and a laser beam is irradiated to form a modified region by multiphoton absorption in the inside of the object along the line to be cut of the object. And
By changing the position of the condensing point of the laser beam in the incident direction of the laser beam incident on the processing object, a plurality of the modified regions are formed to be aligned along the incident direction,
A laser processing method, wherein an area serving as a starting point of cutting is formed inside a predetermined distance from the laser light incident surface of the processing object along the planned cutting line of the processing object by the plurality of reformed regions formed.
前記加工対象物に入射するレーザ光の入射方向においてレーザ光の集光点の位置を変えることにより、前記改質領域を前記入射方向に沿って並ぶように複数形成し、
複数形成された前記改質領域によって、前記加工対象物の切断予定ラインに沿って前記加工対象物のレーザ光入射面から所定距離内側に、切断の起点となる領域を形成する、レーザ加工方法。A modified region is formed inside the processing object along a line to be cut of the processing object by aligning a condensing point inside the processing object on a wafer and irradiating a laser beam, and
By changing the position of the condensing point of the laser beam in the incident direction of the laser beam incident on the processing object, a plurality of the modified regions are formed to be aligned along the incident direction,
A laser processing method, wherein an area serving as a starting point of cutting is formed inside a predetermined distance from the laser light incident surface of the processing object along the planned cutting line of the processing object by the plurality of reformed regions formed.
前記加工対象物に入射するレーザ光の入射方向においてレーザ光の集光点の位置を変えることにより、前記改質領域を前記入射方向に沿って並ぶように複数形成し、
複数形成された前記改質領域によって、前記加工対象物の切断予定ラインに沿って前記加工対象物のレーザ光入射面から所定距離内側に、切断の起点となる領域を形成する、レーザ加工方法。Align the focusing point inside the wafer-like processing object, and irradiate the laser beam under the condition that the peak power density at the focusing point is 1 × 10 8 (W / cm 2 ) or more and the pulse width is 1 μs or less Forming a modified region inside the processing object along the planned cutting line of the processing object, and
By changing the position of the condensing point of the laser beam in the incident direction of the laser beam incident on the processing object, a plurality of the modified regions are formed to be aligned along the incident direction,
A laser processing method, wherein an area serving as a starting point of cutting is formed inside a predetermined distance from the laser light incident surface of the processing object along the planned cutting line of the processing object by the plurality of reformed regions formed.
【請求項７】半導体材料からなるウェハ状の加工対象物の内部に集光点を合わせてレーザ光を照射することにより、前記加工対象物の切断予定ラインに沿って前記加工対象物の内部に溶融処理領域を形成し、かつ、
前記加工対象物に入射するレーザ光の入射方向においてレーザ光の集光点の位置を変えることにより、前記溶融処理領域を前記入射方向に沿って並ぶように複数形成し、
複数形成された前記溶融処理領域によって、前記加工対象物の切断予定ラインに沿って前記加工対象物のレーザ光入射面から所定距離内側に、切断の起点となる領域を形成する、レーザ加工方法。
【請求項８】複数形成される前記溶融処理領域は一列ずつ順次形成される、請求項７に記載のレーザ加工方法。The modified region is a crack region which is a region in which a crack is generated in the inside of the processing object, a melt-processed region which is a region melted in the inside, and a refractive index which is a region in which a refractive index is changed in the inside The laser processing method according to any one of claims 1 to 5, wherein at least one of the change regions is included.
7. A wafer-like object to be processed made of semiconductor material is aligned with a focusing point and irradiated with a laser beam, whereby the object to be processed is cut along a line to be cut of the object to be processed. Form a melt processing zone, and
By changing the position of the condensing point of the laser beam in the incident direction of the laser beam incident on the object to be processed, a plurality of the melting processing regions are formed along the incident direction,
A laser processing method, wherein an area serving as a starting point of cutting is formed inside a predetermined distance from the laser light incident surface of the processing object along the planned cutting line of the processing object by the plurality of formed melting processing regions.
8. The laser processing method according to claim 7, wherein the plurality of the melt processing regions to be formed are formed one by one in sequence.
【請求項１０】前記切断の起点となる領域を形成した後、前記加工対象物を前記切断予定ラインに沿って切断することを特徴とする請求項１〜９のいずれかに記載のレーザ加工方法。The laser processing method according to claim 7 or 8, wherein the plurality of melt processing regions formed in order are formed in order from the side far from the laser light incident surface.
10. The laser processing method according to any one of claims 1 to 9, wherein the object to be processed is cut along the planned cutting line after forming the region to be the starting point of the cutting. .
前記加工対象物が載置される載置台と、
レーザ光を出射するレーザ光源と、
前記載置台に載置された前記加工対象物の内部に、前記レーザ光源から出射されたレーザ光を集光し、そのレーザ光の集光点の位置で改質領域を形成させる集光用レンズとを備え、
レーザ光の集光点を前記加工対象物の切断予定ラインに沿って移動させた後、前記加工対象物に入射するレーザ光の入射方向においてレーザ光の集光点の位置を変えて、そのレーザ光の集光点を前記切断予定ラインに沿って移動させるように、前記載置台及び前記集光用レンズの少なくとも一方を制御する、レーザ加工装置。A laser processing apparatus for forming a modified region inside a wafer-like processing object, comprising:
A mounting table on which the processing target is mounted;
A laser light source for emitting laser light;
A condensing lens for condensing the laser light emitted from the laser light source inside the processing object placed on the mounting table and forming a modified region at the position of the condensing point of the laser light Equipped with
After moving the focusing point of the laser light along the planned cutting line of the processing object, the position of the focusing point of the laser light is changed in the incident direction of the laser light incident on the processing target, and the laser A laser processing apparatus, wherein at least one of the mounting table and the condensing lens is controlled to move a condensing point of light along the line to cut.
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| US8946589B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Method of cutting a substrate, method of cutting a wafer-like object, and method of manufacturing a semiconductor device |
| US8314013B2 (en) | 2002-03-12 | 2012-11-20 | Hamamatsu Photonics K.K. | Semiconductor chip manufacturing method |
| US8263479B2 (en) | 2002-12-03 | 2012-09-11 | Hamamatsu Photonics K.K. | Method for cutting semiconductor substrate |
| US8685838B2 (en) | 2003-03-12 | 2014-04-01 | Hamamatsu Photonics K.K. | Laser beam machining method |
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