JP2002033330A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2002033330A5 JP2002033330A5 JP2001135737A JP2001135737A JP2002033330A5 JP 2002033330 A5 JP2002033330 A5 JP 2002033330A5 JP 2001135737 A JP2001135737 A JP 2001135737A JP 2001135737 A JP2001135737 A JP 2001135737A JP 2002033330 A5 JP2002033330 A5 JP 2002033330A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001135737A JP4683761B2 (ja) | 2000-05-12 | 2001-05-07 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-139844 | 2000-05-12 | ||
JP2000139844 | 2000-05-12 | ||
JP2001135737A JP4683761B2 (ja) | 2000-05-12 | 2001-05-07 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002033330A JP2002033330A (ja) | 2002-01-31 |
JP2002033330A5 true JP2002033330A5 (ja) | 2008-05-22 |
JP4683761B2 JP4683761B2 (ja) | 2011-05-18 |
Family
ID=26591758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001135737A Expired - Fee Related JP4683761B2 (ja) | 2000-05-12 | 2001-05-07 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4683761B2 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4627135B2 (ja) * | 2001-12-28 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 半導体装置の生産方法 |
TW200302511A (en) | 2002-01-28 | 2003-08-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
US7749818B2 (en) | 2002-01-28 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
TWI261358B (en) | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
JP4312466B2 (ja) * | 2002-01-28 | 2009-08-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TWI267131B (en) | 2002-03-05 | 2006-11-21 | Semiconductor Energy Lab | Semiconductor element and semiconductor device using the same |
US6906343B2 (en) | 2002-03-26 | 2005-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
JP4421202B2 (ja) * | 2002-03-26 | 2010-02-24 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
JP2003330388A (ja) * | 2002-05-15 | 2003-11-19 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP4503246B2 (ja) * | 2002-06-25 | 2010-07-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR100507344B1 (ko) | 2003-04-17 | 2005-08-08 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 그의 제조 방법 |
KR100731752B1 (ko) | 2005-09-07 | 2007-06-22 | 삼성에스디아이 주식회사 | 박막트랜지스터 |
JP5143411B2 (ja) * | 2006-12-14 | 2013-02-13 | 三菱電機株式会社 | 薄膜Si素子の製造方法 |
KR101836067B1 (ko) * | 2009-12-21 | 2018-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터와 그 제작 방법 |
TWI567985B (zh) * | 2011-10-21 | 2017-01-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
CN103493186A (zh) | 2011-11-29 | 2014-01-01 | 松下电器产业株式会社 | 薄膜晶体管阵列的制造方法、薄膜晶体管阵列及显示装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6331108A (ja) * | 1986-07-25 | 1988-02-09 | Citizen Watch Co Ltd | Soi素子の製造方法 |
JP3047424B2 (ja) * | 1990-04-02 | 2000-05-29 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP3150840B2 (ja) * | 1994-03-11 | 2001-03-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH08293464A (ja) * | 1995-04-20 | 1996-11-05 | Sharp Corp | 半導体基板及び半導体装置の製造方法 |
JP4637333B2 (ja) * | 1999-08-18 | 2011-02-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2001
- 2001-05-07 JP JP2001135737A patent/JP4683761B2/ja not_active Expired - Fee Related