JP2001345340A - Junction structure - Google Patents

Junction structure

Info

Publication number
JP2001345340A
JP2001345340A JP2000148825A JP2000148825A JP2001345340A JP 2001345340 A JP2001345340 A JP 2001345340A JP 2000148825 A JP2000148825 A JP 2000148825A JP 2000148825 A JP2000148825 A JP 2000148825A JP 2001345340 A JP2001345340 A JP 2001345340A
Authority
JP
Japan
Prior art keywords
protective layer
gold wire
bonding
structure according
bonding structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000148825A
Other languages
Japanese (ja)
Inventor
Noriyuki Yasuike
則之 安池
Nobuyuki Takakura
信之 高倉
Hiroshi Saito
宏 齊藤
Kazunari Kuzuhara
一功 葛原
Michihiko Ueda
充彦 植田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP2000148825A priority Critical patent/JP2001345340A/en
Publication of JP2001345340A publication Critical patent/JP2001345340A/en
Pending legal-status Critical Current

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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Abstract

PROBLEM TO BE SOLVED: To provide junction structure for jointing a gold wire and an aluminum pad reliably. SOLUTION: This junction structure of a gold wire 1 and an aluminum pad 2 is sealed with a sealing material 6 containing bromine. A protection layer 5 that covers a compound layer 4 being generated between the gold wire 1 and the aluminum pad 2 and does not contain any bromine is provided. Also, the structure is provided with an IC chip 3 where a recessed part is formed on the surface, accommodates the compound layer 4 in the recessed part, and may have a protection layer 5 in the recessed part so that the junction is covered. In addition, as another junction structure, the surface of the aluminum pad 2 may be covered with a passivation film 8 where an opening is formed, and at the same time a surface 8a around the opening of the passivation film 8 is covered with the gold wire 1. Also, in addition to the junction structure, the protection layer 5 that does not contain any bromine is provided so that it touches the outside of the lower peripheral part of the gold wire 1 and the passivation film 8.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、金ワイヤとアルミ
パッドとを接合し、その接合部を、臭素を含有する封止
材料によって封止する接合構造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a joining structure for joining a gold wire and an aluminum pad and sealing the joint with a sealing material containing bromine.

【０００２】[0002]

【従来の技術】従来、ＩＣ等の半導体デバイスの電極
と、ワイヤとを接合する手法として、ワイヤボンディン
グ法が知られている。ワイヤボンディング法とは、ま
ず、金ワイヤの先端をアーク放電により融解させてボー
ル状に形成し、次に、そのボール状に形成された金ワイ
ヤ１を、図３（ａ）に示すように、円筒状の押圧治具で
あるキャピラリ９により、シリコン（Ｓｉ）等のＩＣチ
ップ３上に敷設されたアルミパッド２の上に、熱圧着さ
せて接合させる方法である。2. Description of the Related Art Conventionally, a wire bonding method has been known as a technique for bonding an electrode of a semiconductor device such as an IC to a wire. In the wire bonding method, first, the tip of a gold wire is melted by arc discharge to form a ball, and then, the ball-shaped gold wire 1 is formed as shown in FIG. This is a method in which a capillary 9 which is a cylindrical pressing jig is bonded by thermocompression bonding to an aluminum pad 2 laid on an IC chip 3 such as silicon (Si).

【０００３】ワイヤボンディング法を用いて接合させる
と、図３（ｂ）に示すように、金ワイヤ１とアルミパッ
ド２との接合部に、金とアルミの化合物層４が形成さ
れ、図３（ｃ）に示すように、接合部（化合物層４）は
外部からの保護のために、臭素を含有する封止材６によ
って封止されるのが一般的である。ここに、臭素を含有
する封止材６は、エポキシ樹脂のベースに対し、硬化
剤、硬化促進剤、充填剤、難燃性を付与するための臭化
エポキシ樹脂等が含有される混合物である。When bonding is performed by using a wire bonding method, a gold and aluminum compound layer 4 is formed at a bonding portion between the gold wire 1 and the aluminum pad 2 as shown in FIG. As shown in c), the joint (compound layer 4) is generally sealed by a sealing material 6 containing bromine for protection from the outside. Here, the sealing material 6 containing bromine is a mixture containing a curing agent, a curing accelerator, a filler, a brominated epoxy resin for imparting flame retardancy, and the like to the base of the epoxy resin. .

【０００４】しかし、封止が完了したＩＣパッケージ
を、高温雰囲気中に放置すると、時間の経過と共に、化
合物層４に侵入した、臭化エポキシ樹脂の中に含まれる
臭素（Ｂｒ）等が起因して、金ワイヤ１と化合物層４と
の間に腐食層が形成され、その強度の弱い腐食層によっ
て接合強度が低下して最終的には破断し、金ワイヤ１と
アルミパッド２の接合不良が発生するという問題点があ
った。However, if the sealed IC package is left in a high-temperature atmosphere, bromine (Br) contained in the brominated epoxy resin, which has entered the compound layer 4 with the lapse of time, is caused. As a result, a corrosion layer is formed between the gold wire 1 and the compound layer 4, the bonding strength is reduced by the weak corrosion layer, and the bonding layer eventually breaks, resulting in poor bonding between the gold wire 1 and the aluminum pad 2. There was a problem that it occurred.

【０００５】かかる問題点に対し、特開平10−303239号
公報に記載されているように、金ワイヤ１に、マンガン
（Ｍｎ）、パラジウム（Ｐｄ）等を含有させることによ
って、金ワイヤ１と化合物層４との間に形成される腐食
層を低減させ、高い接合信頼性を提供することができる
発明が提案されている。To solve this problem, as described in JP-A-10-303239, the gold wire 1 contains manganese (Mn), palladium (Pd), etc. There has been proposed an invention capable of reducing the corrosion layer formed between the layer 4 and providing high bonding reliability.

【０００６】[0006]

【発明が解決しようとする課題】ところが、上記の発明
は、腐食の原因となる臭素等の侵入を防止したわけでは
ないので、腐食の発生を低減したことに留まり、腐食の
発生を完全に抑制できないことに伴って、なお金ワイヤ
１とアルミパッド２の接合不良が発生する可能性がある
という問題点があった。However, the above-mentioned invention does not necessarily prevent the intrusion of bromine or the like that causes corrosion, so that the above-mentioned invention only reduces the occurrence of corrosion and completely suppresses the occurrence of corrosion. Along with the inability to do so, there is a problem that poor bonding between the money wire 1 and the aluminum pad 2 may occur.

【０００７】本発明は、上記の問題点に鑑みてなされた
ものであり、その目的とするところは、化合物に臭素が
侵入することを防止することによって、確実に金ワイヤ
とアルミパッドの接合を保持することができる接合構造
を提供することにある。The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to prevent the intrusion of bromine into a compound so that the bonding between a gold wire and an aluminum pad is ensured. An object of the present invention is to provide a bonding structure that can be held.

【０００８】[0008]

【課題を解決するための手段】請求項１記載の発明にあ
っては、金ワイヤとアルミパッドとを接合し、その接合
部を、臭素を含有する封止材によって封止する接合構造
であって、前記接合部に生じる化合物層を被覆する、臭
素を含まない保護層を設けたことを特徴とするものであ
る。According to the first aspect of the present invention, there is provided a joining structure in which a gold wire and an aluminum pad are joined, and the joining portion is sealed with a sealing material containing bromine. And a protective layer that does not contain bromine and that covers the compound layer generated at the joint.

【０００９】請求項２記載の発明にあっては、表面に凹
部が形成されたＩＣチップを備え、前記凹部内に前記接
合部が収納されると共に、前記凹部内に、前記化合物層
を被覆する前記保護層を設けたことを特徴とするもので
ある。According to the present invention, there is provided an IC chip having a concave portion formed on a surface thereof, wherein the bonding portion is accommodated in the concave portion, and the compound layer is coated in the concave portion. The present invention is characterized in that the protective layer is provided.

【００１０】請求項３記載の発明にあっては、前記化合
物層の高さよりも高く、前記アルミパッドの周縁部を囲
む中空部材を設け、その中空部材の内側に、前記接合部
が被覆されるように、前記保護層を設けたことを特徴と
するものである。According to the third aspect of the present invention, a hollow member which is higher than the height of the compound layer and surrounds the periphery of the aluminum pad is provided, and the inside of the hollow member is covered with the joining portion. Thus, the present invention is characterized in that the protective layer is provided.

【００１１】請求項４記載の発明にあっては、金ワイヤ
とアルミパッドとを接合し、その接合部を、臭素を含有
する封止材によって封止する接合構造であって、前記ア
ルミパッドの表面を、開口が形成されたパッシベーショ
ン膜によって被覆すると共に、前記金ワイヤは、前記パ
ッシベーション膜の開口周辺の表面を被覆することを特
徴とするものである。According to a fourth aspect of the present invention, there is provided a joining structure in which a gold wire and an aluminum pad are joined, and the joining portion is sealed with a sealing material containing bromine. The surface is covered with a passivation film in which an opening is formed, and the gold wire covers a surface around the opening of the passivation film.

【００１２】請求項５記載の発明にあっては、請求項４
記載の接合構造に対し、前記金ワイヤの下端周縁部の外
側と、前記パッシベーション膜とに当接するように、臭
素を含有しない保護層を設けたことを特徴とするもので
ある。According to the fifth aspect of the present invention, there is provided a fourth aspect.
In the bonding structure described above, a protective layer containing no bromine is provided so as to be in contact with the outside of the lower peripheral edge of the gold wire and the passivation film.

【００１３】請求項６記載の発明にあっては、請求項４
記載の接合構造に対し、前記金ワイヤの下端周縁部と、
前記パッシベーション膜との間に、臭素を含有しない保
護層を設けたことを特徴とするものである。In the invention according to claim 6, claim 4
For the joining structure described, a peripheral edge of the lower end of the gold wire,
A protective layer not containing bromine is provided between the passivation film and the passivation film.

【００１４】請求項７記載の発明にあっては、請求項６
記載の接合構造に対し、前記保護層は、フィルム状のコ
ーティング膜であることを特徴とするものである。According to the seventh aspect of the present invention, there is provided the sixth aspect.
In the above-described bonding structure, the protective layer is a film-like coating film.

【００１５】請求項８記載の発明にあっては、請求項１
乃至請求項３及び請求項５、請求項６何れか記載の接合
構造に対し、前記保護層は樹脂からなることを特徴とす
るものである。According to the invention described in claim 8, claim 1 is provided.
The bonding structure according to any one of claims 3 to 5, and 6, wherein the protective layer is made of resin.

【００１６】請求項９記載の発明にあっては、請求項１
乃至請求項３及び請求項５、請求項６何れか記載の接合
構造に対し、前記保護層は、液状樹脂からなることを特
徴とするものである。According to the ninth aspect of the present invention, the first aspect is provided.
The bonding structure according to any one of claims 3 to 5 and 6, wherein the protective layer is made of a liquid resin.

【００１７】請求項１０記載の発明にあっては、請求項
１乃至請求項３及び請求項５、請求項６何れか記載の接
合構造に対し、前記保護層は、白金若しくは白金合金か
らなることを特徴とするものである。According to a tenth aspect of the present invention, for the bonding structure according to any one of the first to third, fifth, and sixth aspects, the protective layer is made of platinum or a platinum alloy. It is characterized by the following.

【００１８】請求項１１記載の発明にあっては、請求項
１乃至請求項３及び請求項５、請求項６何れか記載の接
合構造に対し、前記保護層は、チタン若しくはチタン合
金からなる特徴とするものである。According to an eleventh aspect of the present invention, for the bonding structure according to any one of the first to third, fifth, and sixth aspects, the protective layer is made of titanium or a titanium alloy. It is assumed that.

【００１９】請求項１２記載の発明にあっては、請求項
１乃至請求項３及び請求項５、請求項６何れか記載の接
合構造に対し、前記保護層は、窒化シリコンからなる特
徴とするものである。According to a twelfth aspect of the present invention, in the semiconductor device according to any one of the first to third, fifth, and sixth aspects, the protective layer is made of silicon nitride. Things.

【００２０】請求項１３記載の発明にあっては、請求項
１乃至請求項３及び請求項５、請求項６何れか記載の接
合構造に対し、前記保護層は、酸化シリコンからなる特
徴とするものである。According to a thirteenth aspect of the present invention, in the semiconductor device according to any one of the first to third, fifth, and sixth aspects, the protective layer is made of silicon oxide. Things.

【００２１】請求項１４記載の発明にあっては、請求項
１乃至請求項３及び請求項５、請求項６何れか記載の接
合構造に対し、前記保護層は、炭化シリコンからなる特
徴とするものである。According to a fourteenth aspect of the present invention, in the bonding structure according to any one of the first to third, fifth, and sixth aspects, the protective layer is made of silicon carbide. Things.

【００２２】請求項１５記載の発明にあっては、請求項
１乃至請求項３及び請求項５、請求項６何れか記載の接
合構造に対し、前記保護層は、ダイヤモンドからなる特
徴とするものである。According to a fifteenth aspect of the present invention, in the semiconductor device according to any one of the first to third aspects, the fifth aspect, and the sixth aspect, the protective layer is made of diamond. It is.

【００２３】[0023]

【発明の実施の形態】以下の各実施形態を説明するにあ
たり、従来の技術と同様の部分については説明を簡略化
若しくは省略し、各実施形態の特徴となる部分について
詳細に説明することとする。DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following description of each embodiment, the description of the same parts as those of the prior art will be simplified or omitted, and the characteristic parts of each embodiment will be described in detail. .

【００２４】［第１の実施の形態］本実施形態の接合構
造について、図１（ａ）に基づいて詳細に説明する。図
１（ａ）は本実施形態の接合構造を示す断面図である。
本実施形態は、一端がアーク放電によりボール状に形成
された金ワイヤ１を、円筒状の押圧治具であるキャピラ
リにより、ＩＣチップ３上に敷設されたアルミパッド２
の上に、熱圧着させて接合させるワイヤボンディングが
終了した後、化合物層４が臭素を含有する封止材６と接
触しないよう、キャピラリによって押圧され変形した部
分の金ワイヤ１と、アルミパッド２と、化合物層４と
を、臭素の含まない保護層５で被覆した後、その周囲
を、臭素を含有する封止材６で封止するものである。[First Embodiment] The joining structure of the present embodiment will be described in detail with reference to FIG. FIG. 1A is a cross-sectional view illustrating a joint structure according to the present embodiment.
In the present embodiment, an aluminum pad 2 laid on an IC chip 3 by a capillary, which is a cylindrical pressing jig, is applied to a gold wire 1 whose one end is formed in a ball shape by arc discharge.
After the wire bonding for thermocompression bonding is completed, the portion of the gold wire 1 pressed and deformed by the capillary and the aluminum pad 2 are pressed so that the compound layer 4 does not come into contact with the sealing material 6 containing bromine. And the compound layer 4 are covered with a protective layer 5 containing no bromine, and the periphery thereof is sealed with a sealing material 6 containing bromine.

【００２５】保護層５の材質としては、絶縁性があり臭
素を含まないエポキシ樹脂等の樹脂が用いられるが、化
合物層４に臭素が侵入しなければ良く、樹脂だけに限定
されるものではない。例えば、白金（Ｐｔ）若しくは白
金合金、チタン（Ｔｉ）若しくはチタン合金、炭化シリ
コン（ＳｉＣ）、ダイヤモンド等の何れかからなる保護
層５を、スパッタリングを用いて形成しても良いし、高
温での化学反応で薄膜を堆積させるＣＶＤ（Chemical V
apor Deposition）法を用いて、酸化シリコン（Ｓｉ
Ｏ2）、窒化シリコン（Ｓｉ3Ｎ4）の保護層５を形成し
ても良い。As a material of the protective layer 5, a resin such as an epoxy resin having an insulating property and not containing bromine is used, but it is sufficient that bromine does not enter the compound layer 4, and the material is not limited to the resin. . For example, the protective layer 5 made of any of platinum (Pt) or a platinum alloy, titanium (Ti) or a titanium alloy, silicon carbide (SiC), diamond, or the like may be formed by sputtering, or may be formed at a high temperature. CVD (Chemical V) for depositing thin films by chemical reaction
Silicon oxide (Si) using the apor deposition method
O 2 ) and silicon nitride (Si 3 N 4 ) protective layer 5 may be formed.

【００２６】また、液状の酸化シリコン（ＳｉＯ2）
を、金ワイヤ１、アルミパッド２、化合物層４の表面に
塗布し、ベーキングをすることによって、酸化シリコン
（ＳｉＯ2）を堆積させて保護層５を形成しても良い。
さらに、液状のフッ素樹脂、シリコーン樹脂、ポリイミ
ド等を噴霧し、ベーキングすることによって、該樹脂等
を堆積させて保護層５を形成しても良い。尚、フッ素樹
脂としては、例えば、液状のポリテトラフルオロエチレ
ン等を用いる。Also, liquid silicon oxide (SiO 2 )
May be applied to the surfaces of the gold wire 1, the aluminum pad 2, and the compound layer 4 and baked to deposit silicon oxide (SiO 2 ) to form the protective layer 5.
Further, the protective layer 5 may be formed by spraying and baking a liquid fluorine resin, silicone resin, polyimide, or the like to deposit the resin or the like. As the fluororesin, for example, liquid polytetrafluoroethylene or the like is used.

【００２７】以上のように構成することで、保護層５に
よって、臭素が化合物層４に侵入するのを抑制すること
ができるので、金ワイヤ１と化合物層４との間に腐食層
が形成されることがなく、確実に金ワイヤ１とアルミパ
ッド２との接合を保持することができる。With the above configuration, the protective layer 5 can prevent bromine from penetrating into the compound layer 4, so that a corrosion layer is formed between the gold wire 1 and the compound layer 4. Therefore, the bonding between the gold wire 1 and the aluminum pad 2 can be reliably maintained.

【００２８】[第２の実施形態]本実施形態の接合構造に
ついて、図１（ｂ）に基づいて詳細に説明する。図１
（ｂ）は本実施形態の接合構造を示す断面図である。本
実施形態は、まず、ＩＣチップ３の表面に略円形の凹部
３ａを形成すると共に、その底部にアルミパッド２を敷
設させ、金ワイヤ１とアルミパッド２をワイヤボンディ
ング法により接合させる。次に、化合物層４と臭素を含
有する封止材６とが接触しないように、凹部３ａに第１
の実施形態で説明した各材料等を用いて保護層５を形成
し、ＩＣチップ３及び保護層５の表面を被覆するよう
に、臭素を含有する封止材６によって封止する。このよ
うに構成することによって、第１の実施形態と同様にし
て、確実に金ワイヤ１とアルミパッド２との接合を保持
することができる。[Second Embodiment] The joining structure of the present embodiment will be described in detail with reference to FIG. FIG.
FIG. 2B is a cross-sectional view illustrating the joining structure of the present embodiment. In this embodiment, first, a substantially circular concave portion 3a is formed on the surface of the IC chip 3, and an aluminum pad 2 is laid on the bottom thereof, and the gold wire 1 and the aluminum pad 2 are joined by a wire bonding method. Next, the first recess is formed in the recess 3a so that the compound layer 4 does not come into contact with the sealing material 6 containing bromine.
The protective layer 5 is formed using the materials and the like described in the first embodiment, and is sealed with a sealing material 6 containing bromine so as to cover the surfaces of the IC chip 3 and the protective layer 5. With such a configuration, the bonding between the gold wire 1 and the aluminum pad 2 can be reliably maintained as in the first embodiment.

【００２９】また、第１の実施形態において、凝固した
臭素を含有する封止材６が保護層５に与える力（分布荷
重ｗ）は、図１（ａ）に示すように、保護層５の曲面形
状に沿って分布することとなり、その分布荷重は垂直方
向の力の成分と、水平方向の力の成分を持っている。こ
の水平方向の力の成分は、金ワイヤ１と化合物層４との
間等に作用して、最悪の場合破断する恐れがある。これ
に対し、本実施形態の分布荷重ｗは、図１（ｂ）に示す
ように、保護層５の上端部より、略一律に下方に向かっ
て印加されることになる。この分布荷重には、水平方向
の力の成分は殆どなく、破断する恐れもない。In the first embodiment, the force (distributed load w) applied to the protective layer 5 by the sealing material 6 containing the solidified bromine, as shown in FIG. It is distributed along a curved surface shape, and the distributed load has a vertical force component and a horizontal force component. This horizontal force component acts between the gold wire 1 and the compound layer 4 or the like, and may be broken in the worst case. On the other hand, as shown in FIG. 1B, the distributed load w of the present embodiment is applied substantially uniformly downward from the upper end of the protective layer 5. This distributed load has almost no horizontal force component and there is no danger of breaking.

【００３０】［第３の実施の形態］本実施形態の接合構
造について、図１（ｃ）に基づいて詳細に説明する。図
１（ｃ）は本実施形態の接合構造を示す断面図である。
本実施形態は、まず、ＩＣチップ３の表面に、第１の実
施形態で説明した保護層５を形成する各材料等を用い
て、略環状の厚膜７（中空部材）を形成させると共に、
圧膜７の環内７ａのＩＣチップ３上に、アルミパッド２
を敷設させて、金ワイヤ１とアルミパッド２をワイヤボ
ンディング法により接合させる。次に、化合物層４が臭
素を含有する封止材６と接触しないように、環内７ａに
第１の実施形態で説明した各材料等を用いて保護層５を
形成し、保護層５及び厚膜７の表面を被覆するように、
臭素を含有する封止材６によって封止する。このように
構成することによって、第１の実施形態と同様にして、
確実に金ワイヤ１とアルミパッド２との接合を保持する
ことができる。[Third Embodiment] The joint structure of the present embodiment will be described in detail with reference to FIG. FIG. 1C is a cross-sectional view illustrating the joint structure according to the present embodiment.
In the present embodiment, first, a substantially annular thick film 7 (hollow member) is formed on the surface of the IC chip 3 by using each material for forming the protective layer 5 described in the first embodiment, and the like.
The aluminum pad 2 is placed on the IC chip 3 inside the ring 7a of the pressure film 7.
Is laid, and the gold wire 1 and the aluminum pad 2 are joined by a wire bonding method. Next, a protective layer 5 is formed using the materials described in the first embodiment in the inner ring 7a so that the compound layer 4 does not come into contact with the sealing material 6 containing bromine. So as to cover the surface of the thick film 7,
It is sealed with a sealing material 6 containing bromine. With this configuration, as in the first embodiment,
The bonding between the gold wire 1 and the aluminum pad 2 can be reliably maintained.

【００３１】［第４の実施の形態］本実施形態の接合構
造について、図２（ａ）に基づいて詳細に説明する。図
２（ａ）は本実施形態の接合構造を示す断面図である。
本実施形態は、まず、ＩＣチップ３上にアルミパッド２
を敷設させた後、アルミパッド２の表面を被覆するよう
にパッシベーション膜８を敷設させると共に、パッシベ
ーション膜８の接合部を形成する位置に開口８ａを設け
る。次に、金ワイヤ１と、開口８ａより露出しているア
ルミパッド２とを、ワイヤボンディング法により接合さ
せる。[Fourth Embodiment] The joining structure of the present embodiment will be described in detail with reference to FIG. FIG. 2A is a cross-sectional view illustrating a joint structure according to the present embodiment.
In this embodiment, first, the aluminum pad 2 is placed on the IC chip 3.
Is laid, a passivation film 8 is laid so as to cover the surface of the aluminum pad 2, and an opening 8a is provided at a position where a joint of the passivation film 8 is formed. Next, the gold wire 1 and the aluminum pad 2 exposed from the opening 8a are joined by a wire bonding method.

【００３２】このとき、金ワイヤ１によって、開口８ａ
周辺の表面８ｂを被覆するように接合させる。そして、
金ワイヤ１及びパッシベーション膜８を被覆するように
臭素を含有する封止材６によって封止する。このように
構成することで、パッシベーション膜８によって、臭素
が化合物層４に侵入するのを抑制することができるの
で、金ワイヤ１と化合物層４との間に腐食層が形成され
ることがなく、略確実に金ワイヤ１とアルミパッド２と
の接合を保持することができる。At this time, the opening 8a is formed by the gold wire 1.
It is bonded so as to cover the peripheral surface 8b. And
The gold wire 1 and the passivation film 8 are sealed by a sealing material 6 containing bromine so as to cover the gold wire 1 and the passivation film 8. With this configuration, the passivation film 8 can prevent bromine from penetrating into the compound layer 4, so that a corrosive layer is not formed between the gold wire 1 and the compound layer 4. Thus, the bonding between the gold wire 1 and the aluminum pad 2 can be held almost reliably.

【００３３】ところが、金ワイヤ１とパッシベーション
膜８との間を介して、臭素が化合物層４に侵入して、金
ワイヤ１と化合物層４との間に腐食層が形成されてしま
う場合があった。以下の各実施形態は、かかる場合を防
止するための実施形態である。However, bromine may enter the compound layer 4 via the space between the gold wire 1 and the passivation film 8 to form a corrosion layer between the gold wire 1 and the compound layer 4. Was. Each of the following embodiments is an embodiment for preventing such a case.

【００３４】［第５の実施の形態］本実施形態の接合構
造について、図２（ｂ）に基づいて詳細に説明する。図
２（ｂ）は本実施形態の接合構造を示す断面図である。
本実施形態は、第４の実施形態において、金ワイヤ１と
アルミパッド２とを、ワイヤボンディング法により接合
させた後、パッシベーション膜８に当接する金ワイヤ１
の略円盤状の部分の周縁部に保護層５を設けてから、金
ワイヤ１と、保護層５と、パッシベーション膜８とを被
覆するように臭素を含有する封止材６によって封止す
る。このように構成することで、保護層５及びパッシベ
ーション膜８によって、臭素が化合物層４に侵入するの
を抑制することができ、それに伴って、金ワイヤ１と化
合物層４との間に腐食層が形成されることがなく、確実
に金ワイヤ１とアルミパッド２との接合を保持すること
ができる。[Fifth Embodiment] The joint structure of the present embodiment will be described in detail with reference to FIG. FIG. 2B is a cross-sectional view illustrating the joint structure according to the present embodiment.
This embodiment is different from the fourth embodiment in that, after bonding the gold wire 1 and the aluminum pad 2 by the wire bonding method, the gold wire 1 is brought into contact with the passivation film 8.
After the protective layer 5 is provided on the peripheral portion of the substantially disk-shaped portion, the sealing is performed with a sealing material 6 containing bromine so as to cover the gold wire 1, the protective layer 5, and the passivation film 8. With this configuration, the protection layer 5 and the passivation film 8 can suppress bromine from entering the compound layer 4, and accordingly, a corrosion layer is formed between the gold wire 1 and the compound layer 4. Is not formed, and the bonding between the gold wire 1 and the aluminum pad 2 can be reliably maintained.

【００３５】［第６の実施の形態］本実施形態の接合構
造について、図２（ｃ）に基づいて詳細に説明する。図
２（ｃ）は本実施形態の接合構造を示す断面図である。
本実施形態は、第４の実施形態において、パッシベーシ
ョン膜８を敷設させると共に、パッシベーション膜８の
接合部を形成する位置に開口８ａを設けた後、開口８ａ
周辺の表面８ｂに沿って、断面視半円状の保護層５を形
成する。次に、開口８ａより露出しているアルミパッド
２と、金ワイヤ１とをワイヤボンディング法により接合
させる。[Sixth Embodiment] The joint structure of the present embodiment will be described in detail with reference to FIG. FIG. 2C is a cross-sectional view illustrating the joint structure according to the present embodiment.
This embodiment is different from the fourth embodiment in that, after the passivation film 8 is laid and the opening 8a is formed at a position where the junction of the passivation film 8 is formed, the opening 8a is formed.
A protective layer 5 having a semicircular cross section is formed along the peripheral surface 8b. Next, the aluminum pad 2 exposed from the opening 8a and the gold wire 1 are joined by a wire bonding method.

【００３６】このとき、金ワイヤ１によって、開口８ａ
周辺に形成された保護層５の表面を被覆するように接合
させる。そして、金ワイヤ１及びパッシベーション膜８
を被覆するように臭素を含有する封止材６によって封止
する。このように構成することで、第５の実施形態と同
様に、確実に金ワイヤ１とアルミパッド２との接合を保
持することができる。尚、保護層５の形状は、図２
（ｃ）に示すように、断面視略半円状に形成するものに
限定されず、例えば図２（ｄ）に示すように、断面視略
矩形状のフィルム状のコーティング膜を形成しても良
い。At this time, the opening 8a is formed by the gold wire 1.
The bonding is performed so as to cover the surface of the protective layer 5 formed on the periphery. Then, the gold wire 1 and the passivation film 8
Is sealed with a sealing material 6 containing bromine so as to cover the surface. With this configuration, the bonding between the gold wire 1 and the aluminum pad 2 can be reliably maintained, as in the fifth embodiment. The shape of the protective layer 5 is shown in FIG.
As shown in (c), the film is not limited to the one formed in a substantially semicircular shape in cross section. For example, as shown in FIG. good.

【００３７】[0037]

【発明の効果】以上のように、請求項１乃至請求項１５
何れか記載の発明にあっては、化合物層に臭素が侵入す
ることを抑制することによって、金ワイヤと化合物との
間に腐食層が形成されるのを防止し、確実に金ワイヤと
アルミパッドとの接合を保持することができるという効
果を奏する。As described above, claims 1 to 15 are as described above.
In any of the inventions described above, by preventing bromine from penetrating into the compound layer, a corrosion layer is prevented from being formed between the gold wire and the compound, and the gold wire and the aluminum pad are surely prevented. This has the effect of maintaining the junction with the substrate.

【００３８】請求項２又は請求項３記載の発明にあって
は、凝固した封止材が保護層に与える分布荷重によっ
て、破断することがないという効果を奏する。According to the second or third aspect of the present invention, there is an effect that the solidified sealing material does not break due to a distributed load applied to the protective layer.

【００３９】請求項５乃至請求項９記載の発明にあって
は、金ワイヤとパッシベーション膜との間を介して、臭
素が金ワイヤとアルミパッドとの化合物に侵入すること
がなく、確実に金ワイヤとアルミパッドとの接合を保持
することができるという効果を奏する。According to the fifth to ninth aspects of the present invention, bromine does not enter the compound of the gold wire and the aluminum pad through the space between the gold wire and the passivation film. There is an effect that the bonding between the wire and the aluminum pad can be maintained.

【００４０】請求項９記載の発明にあっては、薄くて均
一性が良く、かつコストの低廉を図ることができるとい
う効果を奏する。According to the ninth aspect of the present invention, there is an effect that thinness and uniformity are good and the cost can be reduced.

【００４１】請求項１０記載の発明にあっては、白金若
しくは白金合金で保護層を形成することによって、耐食
性に優れると共に、金ワイヤと物性が近いので、化学的
に安定な保護層を形成することができるという効果を奏
する。According to the tenth aspect of the present invention, since the protective layer is formed of platinum or a platinum alloy, the protective layer is excellent in corrosion resistance and close in physical properties to a gold wire, so that a chemically stable protective layer is formed. It has the effect of being able to do so.

【００４２】請求項１１記載の発明にあっては、チタン
若しくはチタン合金で保護層を形成することによって、
耐食性に優れると共に、熱膨張率が接合部と略同一なの
で、熱応力の小さい保護層を形成することができるとい
う効果を奏する。According to the eleventh aspect of the present invention, by forming the protective layer with titanium or a titanium alloy,
Since it is excellent in corrosion resistance and has a coefficient of thermal expansion substantially equal to that of the joint portion, it is possible to form a protective layer having a small thermal stress.

【００４３】請求項１２記載の発明にあっては、窒化シ
リコンで保護層を形成することによって、化合物４への
臭素の侵入防止効果の高い保護層を形成することができ
るという効果を奏する。According to the twelfth aspect of the invention, by forming the protective layer with silicon nitride, it is possible to form a protective layer having a high effect of preventing bromine from penetrating into the compound 4.

【００４４】請求項１３記載の発明にあっては、酸化シ
リコンで保護層を形成することによって、柔軟な保護層
とすることができるので、接合部に印加される付加が著
しく減少できるという効果を奏する。According to the thirteenth aspect of the present invention, since the flexible protective layer can be formed by forming the protective layer from silicon oxide, the effect of significantly reducing the load applied to the junction can be reduced. Play.

【００４５】請求項１４記載の発明にあっては、炭化シ
リコンで保護層を形成することによって、耐食性に優れ
ると共に、金ワイヤ１、アルミパッド２、化合物４に対
して、密着性の強い保護層を形成することができるとい
う効果を奏する。According to the fourteenth aspect of the present invention, the protective layer is formed of silicon carbide, so that the protective layer is excellent in corrosion resistance and has strong adhesion to the gold wire 1, the aluminum pad 2, and the compound 4. Can be formed.

【００４６】請求項１５記載の発明にあっては、ダイヤ
モンドで保護層を形成することによって、緻密な結晶構
造を持つ保護層とすることができるので、化合物４への
臭素の侵入防止効果の高い保護層を形成することができ
るという効果を奏する。According to the present invention, since the protective layer having a dense crystal structure can be formed by forming the protective layer with diamond, the effect of preventing bromine from penetrating into the compound 4 is high. There is an effect that a protective layer can be formed.

【図面の簡単な説明】[Brief description of the drawings]

【図１】（ａ）は第１の実施形態の接合構造を示す断面
図、（ｂ）は第２の実施形態の接合構造を示す断面図、
（ｃ）は第３の実施形態の接合構造を示す断面図であ
る。1A is a cross-sectional view illustrating a bonding structure according to a first embodiment, FIG. 1B is a cross-sectional view illustrating a bonding structure according to a second embodiment,
(C) is a sectional view showing a joint structure of the third embodiment.

【図２】（ａ）は第４の実施形態の接合構造を示す断面
図、（ｂ）は第５の実施形態の接合構造を示す断面図、
（ｃ）及び（ｄ）は第６の実施形態の接合構造を示す断
面図である。FIG. 2A is a cross-sectional view illustrating a joint structure according to a fourth embodiment, FIG. 2B is a cross-sectional view illustrating a joint structure according to a fifth embodiment,
(C) And (d) is sectional drawing which shows the joining structure of 6th Embodiment.

【図３】従来の接合を示す図であり、（ａ）はキャピラ
リ９により、金ワイヤ１とアルミパッド２とが当接した
状態を示す図、（ｂ）は金ワイヤ１がアルミパッド２に
接合された状態を示す図、（ｃ）は接合後に臭素を含有
する封止材６によって封止された状態を示す図である。3A and 3B are views showing a conventional bonding, in which FIG. 3A shows a state in which a gold wire 1 and an aluminum pad 2 are in contact with each other by a capillary 9, and FIG. FIG. 3C is a diagram showing a joined state, and FIG. 3C is a diagram showing a state sealed with a sealing material 6 containing bromine after joining.

【符号の説明】[Explanation of symbols]

１ 金ワイヤ ２ アルミパッド ３ ＩＣチップ ４ 化合物層 ５ 保護層 ６ 臭素を含有する封止材 ７ 厚膜（中空部材） DESCRIPTION OF SYMBOLS 1 Gold wire 2 Aluminum pad 3 IC chip 4 Compound layer 5 Protective layer 6 Sealing material containing bromine 7 Thick film (hollow member)

フロントページの続き (72)発明者 齊藤 宏 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 葛原 一功 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 植田 充彦 大阪府門真市大字門真1048番地松下電工株 式会社内 Ｆターム(参考） 5F044 AA15 CC02 EE08 QQ06 Continuing on the front page (72) Inventor Hiroshi Saito 1048, Kadoma, Kadoma, Osaka Pref., Matsushita Electric Works, Ltd. Inventor Mitsuhiko Ueda 1048 Kazuma Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Works Co., Ltd. F term (reference) 5F044 AA15 CC02 EE08 QQ06

Claims (15)

【特許請求の範囲】[Claims] 【請求項１】 金ワイヤとアルミパッドとを接合し、そ
の接合部を、臭素を含有する封止材によって封止する接
合構造であって、前記接合部に生じる化合物層を被覆す
る、臭素を含まない保護層を設けたことを特徴とする接
合構造。1. A bonding structure in which a gold wire and an aluminum pad are bonded, and the bonding portion is sealed with a bromine-containing sealing material. A bonding structure characterized by providing a protective layer not containing. 【請求項２】 表面に凹部が形成されたＩＣチップを備
え、前記凹部内に前記接合部が収納されると共に、前記
凹部内に、前記化合物層を被覆する前記保護層を設けた
ことを特徴とする請求項１記載の接合構造。2. An IC chip having a concave portion formed on a surface thereof, wherein the bonding portion is accommodated in the concave portion, and the protective layer for covering the compound layer is provided in the concave portion. The joint structure according to claim 1, wherein 【請求項３】 前記化合物層の高さよりも高く、前記ア
ルミパッドの周縁部を囲む中空部材を設け、その中空部
材の内側に、前記接合部が被覆されるように、前記保護
層を設けたことを特徴とする請求項１記載の接合構造。3. A hollow member which is higher than the height of the compound layer and surrounds the periphery of the aluminum pad is provided, and the protective layer is provided inside the hollow member so as to cover the joint. The joint structure according to claim 1, wherein: 【請求項４】 金ワイヤとアルミパッドとを接合し、そ
の接合部を、臭素を含有する封止材によって封止する接
合構造であって、前記アルミパッドの表面を、開口が形
成されたパッシベーション膜によって被覆すると共に、
前記金ワイヤは、前記パッシベーション膜の開口周辺の
表面を被覆することを特徴とする接合構造。4. A bonding structure for bonding a gold wire and an aluminum pad, and sealing the bonding portion with a sealing material containing bromine, wherein the surface of the aluminum pad is formed with a passivation having an opening. While covering with a membrane,
The bonding structure, wherein the gold wire covers a surface around an opening of the passivation film. 【請求項５】 前記金ワイヤの下端周縁部の外側と、前
記パッシベーション膜とに当接するように、臭素を含有
しない保護層を設けたことを特徴とする請求項４記載の
接合構造。5. The bonding structure according to claim 4, wherein a protective layer containing no bromine is provided so as to abut the outer periphery of the lower edge of the gold wire and the passivation film. 【請求項６】 前記金ワイヤの下端周縁部と、前記パッ
シベーション膜との間に、臭素を含有しない保護層を設
けたことを特徴とする請求項４記載の接合構造。6. The bonding structure according to claim 4, wherein a protective layer containing no bromine is provided between a peripheral edge of a lower end of said gold wire and said passivation film. 【請求項７】 前記保護層は、フィルム状のコーティン
グ膜であることを特徴とする請求項６記載の接合構造。7. The joint structure according to claim 6, wherein the protective layer is a film-like coating film. 【請求項８】 前記保護層は樹脂からなることを特徴と
する請求項１乃至請求項３及び請求項５、請求項６何れ
か記載の接合構造。8. The bonding structure according to claim 1, wherein the protection layer is made of a resin. 【請求項９】 前記保護層は、液状樹脂からなることを
特徴とする請求項１乃至請求項３及び請求項５、請求項
６何れか記載の接合構造。9. The bonding structure according to claim 1, wherein the protective layer is made of a liquid resin. 【請求項１０】 前記保護層は、白金若しくは白金合金
からなることを特徴とする請求項１乃至請求項３及び請
求項５、請求項６何れか記載の接合構造。10. The bonding structure according to claim 1, wherein said protective layer is made of platinum or a platinum alloy. 【請求項１１】 前記保護層は、チタン若しくはチタン
合金からなる特徴とする請求項１乃至請求項３及び請求
項５、請求項６何れか記載の接合構造。11. The bonding structure according to claim 1, wherein the protective layer is made of titanium or a titanium alloy. 【請求項１２】 前記保護層は、窒化シリコンからなる
特徴とする請求項１乃至請求項３及び請求項５、請求項
６何れか記載の接合構造。12. The bonding structure according to claim 1, wherein said protective layer is made of silicon nitride. 【請求項１３】 前記保護層は、酸化シリコンからなる
特徴とする請求項１乃至請求項３及び請求項５、請求項
６何れか記載の接合構造。13. The bonding structure according to claim 1, wherein the protective layer is made of silicon oxide. 【請求項１４】 前記保護層は、炭化シリコンからなる
特徴とする請求項１乃至請求項３及び請求項５、請求項
６何れか記載の接合構造。14. The bonding structure according to claim 1, wherein said protective layer is made of silicon carbide. 【請求項１５】 前記保護層は、ダイヤモンドからなる
特徴とする請求項１乃至請求項３及び請求項５、請求項
６何れか記載の接合構造。15. The bonding structure according to claim 1, wherein said protective layer is made of diamond.
JP2000148825A 2000-03-29 2000-05-19 Junction structure Pending JP2001345340A (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
JP2000-91441 2000-03-29
JP2000091441 2000-03-29
JP2000148825A JP2001345340A (en) 2000-03-29 2000-05-19 Junction structure

Publications (1)

Publication Number Publication Date
JP2001345340A true JP2001345340A (en) 2001-12-14

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ID=26588726

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302261A (en) * 2008-06-12 2009-12-24 Toyota Central R&D Labs Inc Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302261A (en) * 2008-06-12 2009-12-24 Toyota Central R&D Labs Inc Semiconductor device

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