JP2001298051A - Solder connecting part - Google Patents
Solder connecting partInfo
- Publication number
- JP2001298051A JP2001298051A JP2000115473A JP2000115473A JP2001298051A JP 2001298051 A JP2001298051 A JP 2001298051A JP 2000115473 A JP2000115473 A JP 2000115473A JP 2000115473 A JP2000115473 A JP 2000115473A JP 2001298051 A JP2001298051 A JP 2001298051A
- Authority
- JP
- Japan
- Prior art keywords
- zinc
- tin
- solder
- solder alloy
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子機器および半
導体パッケージなどを含む電子部品における機械的およ
び電気的接続のためのはんだ接続部に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solder connection for mechanical and electrical connection in electronic parts including electronic equipment and semiconductor packages.
【０００２】[0002]
【従来の技術】従来、対向するはんだを突き合わせて接
合する形態は、半導体の内部配線構造において用いられ
てきたが、鉛を含有する高融点はんだ（Ｐｂ−５Ｓｎ）
と、錫鉛共晶はんだ（Ｓｎ−37Ｐｂ）が使用されてい
た。この例としては、特開平８−６４７１７号公報に記
載がある。しかし、昨今、鉛が環境上好ましくないこと
から、はんだ接合部の鉛フリー化が必要とされており、
鉛フリー化対応のためには、従来の上記はんだ材料は使
用できない。2. Description of the Related Art Conventionally, a method in which opposing solders are joined by butt has been used in an internal wiring structure of a semiconductor. However, lead-containing high melting point solder (Pb-5Sn) has been used.
And a tin-lead eutectic solder (Sn-37Pb). This example is described in JP-A-8-64717. However, in recent years, since lead is not environmentally desirable, lead-free solder joints are required,
Conventionally, the above-mentioned solder material cannot be used for the lead-free use.
【０００３】鉛フリーの観点から金バンプとＳｎ−3.5
Ａｇはんだによる接合方法は、特開平７−３７９３５号
公報に記載されている。さらにはチップ側にＳｎ−１Ａ
ｇを組成とする線材でバンプを形成し、対向する電極に
Ｓｎ−50Ｉｎはんだを形成する構成について、特開平８
−１７８３８号公報に記載がある。また、金のスタッド
バンプと銀ペーストの組み合わせが、特開平５−２１８
１３８号公報に記載がある。[0003] From the viewpoint of lead-free, gold bumps and Sn-3.5
The joining method using Ag solder is described in JP-A-7-37935. Furthermore, Sn-1A on the chip side
Japanese Patent Application Laid-Open No. Hei 8 (1996) discloses a configuration in which bumps are formed with a wire having a composition of g, and Sn-50In solder is formed on opposing electrodes.
No. 17838. Further, a combination of a gold stud bump and a silver paste is disclosed in Japanese Patent Application Laid-Open No. 5-218.
No. 138 publication.
【０００４】これらは金のバンプが使用されており、材
料コストが高くなるとともに、装置コストおよび作業時
間を要するワイヤボンディング法を用いるから製作コス
トも高くなる。また、インジウム（Ｉｎ）のように産出
量が少ない資源のため、高価であると共に安定供給の面
で問題がある。さらには、チップ側および基板側が共
に、Ｓｎ−３．５Ａｇはんだを用いる方法があるが、は
んだ融点が２２１℃と、従来のＳｎＰｂ共晶（融点１８
３℃）はんだに比べ高くなり、接合温度が高くなる不具
合がある。[0004] Since these use gold bumps, the material cost increases, and the manufacturing cost also increases because a wire bonding method that requires equipment cost and operation time is used. In addition, since resources such as indium (In) are low in yield, they are expensive and have problems in stable supply. Further, there is a method using Sn-3.5Ag solder for both the chip side and the substrate side. However, the melting point of the solder is 221 ° C. and the conventional SnPb eutectic (melting point 18
3 ° C.) There is a problem that the temperature is higher than that of the solder and the joining temperature becomes higher.
【０００５】このようなコストパフォーマンスおよび実
装接合性の観点からは産出量も安定している資源を用い
るとともに、融点の低いはんだ材料を併用した方法が好
ましい。比較的低融点のはんだ材料としてＳｎ−９Ｚｎ
や、この系に一部ビスマスを添加した材料があるが、基
板の配線材料である銅と、Ｓｎ−９Ｚｎはんだ材料との
間に、非常に脆い性質を持つ銅−亜鉛金属間化合物層お
よびボイドが接合界面に形成され、信頼性に問題があ
る。（６ｔｈＳymposium on 「Ｍicrojoining and Ａss
embly Ｔechnology in Ｅlectronics」pp３１３−３１
８）[0005] From the viewpoint of cost performance and mountability, it is preferable to use a resource having a stable output and to use a solder material having a low melting point. Sn-9Zn as a relatively low melting point solder material
Also, there is a material in which bismuth is partially added to this system, but a copper-zinc intermetallic compound layer having a very brittle property and a void are formed between copper as a wiring material of a substrate and a Sn-9Zn solder material. Are formed at the bonding interface, and there is a problem in reliability. (6 th Symposium on "Microjoining and Ass
embly Technology in Electronics ”pp313-31
8)
【０００６】[0006]
【発明が解決しようとする課題】このように、従来、半
導体パッケージの内部配線構造において、はんだ合金バ
ンプを介した接合形態をとる場合、チップ側にＰｂ−５
Ｓｎ（液相線温度３００℃）のはんだ合金バンプを設
け、積層基板の銅導体パッド上にＳｎＰｂ共晶（融点１
８３℃）はんだ合金バンプを設け、位置合わせした後、
２３０℃前後で溶融接合していたものを、チップおよび
基板の両側にＳｎ−３．５Ａｇ（融点２２１℃）のはん
だ合金バンプを設けた場合は、溶融接合温度を２７０℃
前後まで上げる必要がある。接合温度が高温になると、
フラックスの耐熱性や、残さ洗浄の難しさが大きな問題
となる。As described above, conventionally, in the case of the internal wiring structure of a semiconductor package, when a bonding mode is taken via a solder alloy bump, Pb-5 is applied to the chip side.
An Sn (liquidus temperature of 300 ° C.) solder alloy bump was provided, and a SnPb eutectic (melting point: 1
83 ° C) After providing solder alloy bumps and aligning them,
When a solder alloy bump of Sn-3.5Ag (melting point 221 ° C.) is provided on both sides of the chip and the substrate, the melt bonding temperature is set to 270 ° C.
It is necessary to raise it up and down. When the joining temperature rises,
The heat resistance of the flux and the difficulty in cleaning the residue are serious problems.
【０００７】そこで、チップ側または積層基板のどちら
か一方に、Ｓｎ−Ｚｎ系の低融点はんだを用いること
で、溶融接合温度を従来どおりとすると、脆くて機械的
信頼性を損ねる銅−亜鉛金属間化合物層が生成され、は
んだ接合の信頼性が低下する問題が生ずる。[0007] Therefore, by using Sn-Zn based low melting point solder on either the chip side or the laminated substrate, if the fusion bonding temperature is kept at the conventional level, the copper-zinc metal which is brittle and impairs the mechanical reliability. The formation of an inter-compound layer causes a problem that the reliability of the solder joint is reduced.
【０００８】本発明は、このような点に鑑みなされたも
ので、比較的安価な材料を用いて、鉛を含まず環境に配
慮した、かつ信頼性の高いはんだ接合を得ることを目的
とするものである。The present invention has been made in view of the above points, and has as its object to obtain an environment-friendly and highly reliable solder joint that does not contain lead using a relatively inexpensive material. Things.
【０００９】[0009]
【課題を解決するための手段】請求項１に記載された発
明は、銅を含む導体と、導体に形成された錫およびニッ
ケルのいずれか一方を含む亜鉛拡散防止層と、亜鉛拡散
防止層に形成された錫−亜鉛系はんだ合金を含むはんだ
合金バンプとを具備したはんだ接続部であり、環境に有
害な鉛でなく環境に無害でコストパフォーマンスに優れ
た亜鉛を含んだ錫−亜鉛系はんだ合金の低価格、低融点
を活かしつつ、錫またはニッケルを含む亜鉛拡散防止層
により亜鉛の拡散を防止することで、機械的強度の低い
脆弱な銅−亜鉛金属間化合物層の生成およびボイドの生
成を防止し、これらの生成に伴う機械的信頼性の低下を
防ぐから、信頼性の高いはんだ接合が得られる。According to the present invention, a conductor containing copper, a zinc diffusion prevention layer containing either tin or nickel formed on the conductor, and a zinc diffusion prevention layer are provided. A tin-zinc-based solder alloy including a formed solder alloy bump containing a tin-zinc-based solder alloy and a zinc-containing zinc that is harmless to the environment and excellent in cost performance, not lead harmful to the environment. By making use of the low price and low melting point of, and preventing the diffusion of zinc by a zinc diffusion prevention layer containing tin or nickel, the formation of fragile copper-zinc intermetallic compound layer with low mechanical strength and the generation of voids Therefore, a highly reliable solder joint can be obtained, since the mechanical reliability associated with the generation of these components is prevented.
【００１０】請求項２に記載された発明は、請求項１記
載のはんだ接続部において、はんだ合金バンプが、錫−
亜鉛系はんだ合金バンプと、錫に、銀、銅、ビスマス、
インジウムおよびニッケルの中の少なくとも１元素を含
む錫基はんだ合金バンプとを突き合わせて、接触保持、
固相拡散および溶融接合のいずれか一方により設けられ
たものであり、錫基はんだ合金バンプは、錫に、銀、
銅、ビスマス、インジウムおよびニッケルの中の少なく
とも１元素を含むことで、機械的特性が向上するととも
に融点が降下するから、鉛を含まないが融点の比較的低
い錫−亜鉛系はんだ合金バンプと溶融接合される場合
は、溶融接合時の溶融温度を部品の耐熱温度以内での温
度上昇に留めることが可能となる。[0010] According to a second aspect of the present invention, in the first aspect, the solder alloy bump is formed of tin-based solder.
Zinc-based solder alloy bumps, tin, silver, copper, bismuth,
Abutting with a tin-based solder alloy bump containing at least one element of indium and nickel,
It is provided by one of solid phase diffusion and fusion bonding, and the tin-based solder alloy bump has tin, silver,
By containing at least one element among copper, bismuth, indium and nickel, the mechanical properties are improved and the melting point is lowered, so that the tin-zinc solder alloy bump containing no lead but having a relatively low melting point can be melted. In the case of joining, it is possible to keep the melting temperature at the time of fusion joining within a temperature rise within the heat-resistant temperature of the component.
【００１１】請求項３に記載された発明は、請求項１ま
たは２記載のはんだ接続部における亜鉛拡散防止層が、
電解メッキおよび無電解メッキのいずれか一方により下
地の銅の導体上に形成され、燐やホウ素などの不純物を
含むものであり、高密度化と価格を考慮した場合、スパ
ッタ法などより電解メッキや無電解メッキが好ましく、
また、メッキ液の添加物の燐やホウ素を含有することに
なるが、特性上問題は無い。According to a third aspect of the present invention, the zinc diffusion preventing layer in the solder connection part according to the first or second aspect is characterized in that:
It is formed on the underlying copper conductor by one of electrolytic plating and electroless plating, and contains impurities such as phosphorus and boron. Electroless plating is preferred,
Further, it contains phosphorus and boron as additives of the plating solution, but there is no problem in characteristics.
【００１２】請求項４に記載された発明は、請求項１乃
至３のいずれかに記載のはんだ接続部において、はんだ
合金バンプが、亜鉛拡散防止層に金層を介して形成され
たものであり、はんだ濡れ性の良くない亜鉛拡散防止層
であっても、その亜鉛拡散防止層に金層を施すことによ
り、はんだ合金バンプのはんだ濡れ性を改善して、確実
なはんだ接合を得るようにする。According to a fourth aspect of the present invention, in the solder joint according to any one of the first to third aspects, the solder alloy bump is formed on the zinc diffusion preventing layer via a gold layer. Even if the zinc diffusion preventing layer has poor solder wettability, by applying a gold layer to the zinc diffusion preventing layer, the solder wettability of the solder alloy bump can be improved and a reliable solder joint can be obtained. .
【００１３】請求項５に記載された発明は、請求項４記
載のはんだ接続部における金層が、亜鉛拡散防止層にパ
ラジウム層を介して形成されたものであり、金層の下地
にパラジウム層を施すことにより、薄い金層の厚みの均
一性を確保する。According to a fifth aspect of the present invention, the gold layer in the solder connection part according to the fourth aspect is formed such that a zinc diffusion preventing layer is formed with a palladium layer interposed therebetween, and a palladium layer is formed under the gold layer. Is performed, the uniformity of the thickness of the thin gold layer is ensured.
【００１４】請求項６に記載された発明は、請求項１乃
至５のいずれかに記載のはんだ接続部において、錫を含
む亜鉛拡散防止層と下地の銅との間に形成された銅−錫
金属間化合物層を具備したものであり、この銅−錫金属
間化合物層によっても、亜鉛の拡散を抑えることが可能
となり、信頼性が向上する。According to a sixth aspect of the present invention, there is provided a solder-joint according to any one of the first to fifth aspects, wherein a copper-tin layer is formed between a zinc diffusion preventing layer containing tin and an underlying copper layer. It is provided with an intermetallic compound layer, and the copper-tin intermetallic compound layer can also suppress the diffusion of zinc, thereby improving the reliability.
【００１５】請求項７に記載された発明は、請求項１乃
至５のいずれかに記載のはんだ接続部において、ニッケ
ルを含む亜鉛拡散防止層と錫−亜鉛系はんだ合金バンプ
との間に形成されたニッケル−錫金属間化合物層を具備
したものであり、このニッケル−錫金属間化合物層によ
っても、亜鉛の拡散を抑えることが可能となり、信頼性
が向上する。According to a seventh aspect of the present invention, in the solder joint according to any one of the first to fifth aspects, the solder connection portion is formed between a zinc diffusion preventing layer containing nickel and a tin-zinc solder alloy bump. The nickel-tin intermetallic compound layer is also provided, and the nickel-tin intermetallic compound layer can also suppress the diffusion of zinc and improve reliability.
【００１６】請求項８に記載された発明は、請求項１乃
至７のいずれかに記載のはんだ接続部における錫−亜鉛
系はんだ合金バンプが、第３元素として銀、銅、ビスマ
ス、インジウムおよびニッケルのうち、少なくとも１元
素を含むものであり、第３元素により、錫−亜鉛系はん
だ合金バンプの機械的特性の向上や、融点の降下を図
る。According to the invention described in claim 8, the tin-zinc based solder alloy bump in the solder connection part according to any one of claims 1 to 7 has silver, copper, bismuth, indium and nickel as the third element. Of these, at least one element is included, and the third element aims to improve the mechanical properties of the tin-zinc solder bump and lower the melting point.
【００１７】[0017]
【発明の実施の形態】以下、本発明の一実施の形態を図
１を参照しながら説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIG.
【００１８】図１（Ａ）に示されるように、積層型の樹
脂基板11に、銅により形成された導体としての銅箔導体
12が形成され、この銅箔導体12のはんだ合金バンプ形成
面を除く部分および樹脂基板11上にソルダレジスト13が
形成され、このソルダレジスト13の形成されていない銅
箔導体12に、銅−錫金属間化合物層（一部亜鉛含有）14
を介して、亜鉛拡散防止層としての錫メッキ層15が形成
され、この錫メッキ層15に錫−亜鉛系はんだ合金を含む
はんだ合金バンプ（以下、このバンプを「錫−亜鉛系は
んだ合金バンプ」という）16が形成されている。As shown in FIG. 1A, a copper foil conductor as a conductor formed of copper is provided on a laminated resin substrate 11.
12 is formed, a solder resist 13 is formed on a portion of the copper foil conductor 12 excluding the solder alloy bump forming surface and on the resin substrate 11, and a copper-tin is formed on the copper foil conductor 12 on which the solder resist 13 is not formed. Intermetallic compound layer (partially containing zinc) 14
A tin plating layer 15 as a zinc diffusion preventing layer is formed, and a solder alloy bump containing a tin-zinc solder alloy (hereinafter, referred to as a “tin-zinc solder alloy bump”) is formed on the tin plating layer 15. 16) are formed.
【００１９】一方、シリコンチップ21にアルミニューム
電極パッド（以下、これを「Ａｌ電極パッド」という）
22が形成され、このＡｌ電極パッド22に、アンダーバン
プメタロジ層またはアンダーバリアメタル層（以下、こ
れらを「ＵＢＭ層」という）23が形成され、このＵＢＭ
層23のはんだ合金バンプ形成面を除く部分およびシリコ
ンチップ21上に保護膜24が形成され、この保護膜24の形
成されていないＵＢＭ層23に錫基はんだ合金バンプ25が
形成されている。On the other hand, aluminum electrode pads (hereinafter referred to as "Al electrode pads") are provided on the silicon chip 21.
On the Al electrode pad 22, an under bump metallization layer or an under barrier metal layer (hereinafter referred to as "UBM layer") 23 is formed.
A protective film 24 is formed on the portion of the layer 23 other than the surface on which the solder alloy bumps are formed and on the silicon chip 21, and a tin-based solder alloy bump 25 is formed on the UBM layer 23 where the protective film 24 is not formed.
【００２０】この錫基はんだ合金バンプ25は、錫に、
銀、銅、ビスマス、インジウムおよびニッケルの中の少
なくとも１元素を、機械的特性の向上や融点降下のため
に含むはんだ合金である。The tin-based solder alloy bump 25 is
A solder alloy containing at least one element of silver, copper, bismuth, indium and nickel for improving mechanical properties and lowering the melting point.
【００２１】前記錫−亜鉛系はんだ合金バンプ16と錫基
はんだ合金バンプ25とが、融点以上でのリフロー加熱に
より溶融接合され、図１（Ｂ）に示されるように、錫−
亜鉛系はんだ合金を含むはんだ合金バンプ26が形成され
る。The tin-zinc-based solder alloy bump 16 and the tin-based solder alloy bump 25 are melt-bonded by reflow heating at a temperature equal to or higher than the melting point, and as shown in FIG.
A solder alloy bump 26 containing a zinc-based solder alloy is formed.
【００２２】なお、前記錫−亜鉛系はんだ合金バンプ16
と、前記錫基はんだ合金バンプ25とを接合する方法とし
ては、上記溶融接合だけでなく、樹脂基板11に対するシ
リコンチップ21の接着による接触保持により、あるいは
錫−亜鉛系はんだ合金バンプ16と錫基はんだ合金バンプ
25とを融点以下で加熱しながら加圧接触させる固相拡散
により、機械的および電気的に接続するようにしても良
い。The tin-zinc solder alloy bumps 16
The method of joining the tin-based solder alloy bump 25 with the tin-based solder alloy bump 25 is not only the above-mentioned fusion bonding, but also by the contact holding of the silicon chip 21 to the resin substrate 11 by adhesion or the tin-zinc solder alloy bump 16 and the tin-based solder alloy bump 16. Solder alloy bump
25 and 25 may be mechanically and electrically connected by solid-phase diffusion in which pressure contact is made while heating at a temperature below the melting point.
【００２３】次に、本発明の他の実施の形態を図２を参
照しながら説明する。Next, another embodiment of the present invention will be described with reference to FIG.
【００２４】図２（Ａ）に示されるように、樹脂基板11
に銅箔導体12が形成され、この銅箔導体12のはんだ合金
バンプ形成面を除く部分および樹脂基板11上にソルダレ
ジスト13が形成され、このソルダレジスト13の形成され
ていない銅箔導体12に、亜鉛拡散防止層としてのニッケ
ルメッキ層27が形成され、このニッケルメッキ層27に、
ニッケル−錫金属間化合物層28を介して、錫−亜鉛系は
んだ合金バンプ16が形成されている。As shown in FIG. 2A, the resin substrate 11
A solder resist 13 is formed on a portion of the copper foil conductor 12 excluding the solder alloy bump forming surface and on the resin substrate 11, and the copper foil conductor 12 on which the solder resist 13 is not formed is formed. A nickel plating layer 27 is formed as a zinc diffusion preventing layer.
The tin-zinc-based solder alloy bump 16 is formed via the nickel-tin intermetallic compound layer 28.
【００２５】一方、シリコンチップ21にアルミニューム
電極パッド（以下、これを「Ａｌ電極パッド」という）
22が形成され、このＡｌ電極パッド22にＵＢＭ層23が形
成され、このＵＢＭ層23のはんだ合金バンプ形成面を除
く部分およびシリコンチップ21上に保護膜24が形成さ
れ、この保護膜24の形成されていないＵＢＭ層23に錫基
はんだ合金バンプ25が形成されている。On the other hand, aluminum electrode pads (hereinafter referred to as "Al electrode pads") are provided on the silicon chip 21.
22, a UBM layer 23 is formed on the Al electrode pad 22, a protective film 24 is formed on the portion of the UBM layer 23 other than the surface on which the solder alloy bump is formed, and on the silicon chip 21. The tin-based solder alloy bump 25 is formed on the UBM layer 23 which is not formed.
【００２６】前記錫−亜鉛系はんだ合金バンプ16と錫基
はんだ合金バンプ25とが、融点以上でのリフロー加熱に
より溶融接合され、図２（Ｂ）に示されるように、錫−
亜鉛系はんだ合金を含むはんだ合金バンプ26が形成され
る。なお、これらの接合方法は、前記接触保持でも、あ
るいは前記固相拡散でも良い。The tin-zinc-based solder alloy bump 16 and the tin-based solder alloy bump 25 are melt-bonded by reflow heating at a temperature not lower than the melting point, and as shown in FIG.
A solder alloy bump 26 containing a zinc-based solder alloy is formed. In addition, these joining methods may be the contact holding or the solid phase diffusion.
【００２７】以上のように、対向するはんだ合金バンプ
16，25を突き合わせて機械的および電気的に接合するは
んだ接続部において、一方に、錫メッキ層15およびニッ
ケルメッキ層27のいずれか一方を介して錫−亜鉛系はん
だ合金バンプ16を設け、他方に錫に銀、銅、ビスマス、
インジウムおよびニッケルの中の少なくとも１元素を含
む錫基はんだ合金バンプ25を設けた接合用導体を、接触
保持させるか、固相拡散あるいは溶融接合することによ
り形成されるはんだ接続部である。As described above, the opposing solder alloy bumps
At the solder connection part where the 16 and 25 are butted and joined mechanically and electrically, one of them is provided with a tin-zinc-based solder alloy bump 16 via one of a tin plating layer 15 and a nickel plating layer 27, and To tin, silver, copper, bismuth,
This is a solder connection portion formed by contact-holding, solid-phase diffusion or fusion bonding a bonding conductor provided with a tin-based solder alloy bump 25 containing at least one element of indium and nickel.
【００２８】そして、樹脂基板11側またはシリコンチッ
プ21側のどちらか一方に、錫−亜鉛系の低融点はんだ合
金を用いることで、溶融接合温度を従来どおりとすると
共に、機械的信頼性を損ねる銅−亜鉛金属間化合物層の
生成を、錫メッキ層15およびニッケルメッキ層27により
抑制することで、低コストで信頼性が高く、かつ鉛によ
る環境汚染の無いはんだ接合が得られる。By using a tin-zinc based low melting point solder alloy on either the resin substrate 11 side or the silicon chip 21 side, the fusion bonding temperature is kept as usual and the mechanical reliability is impaired. By suppressing the formation of the copper-zinc intermetallic compound layer by the tin plating layer 15 and the nickel plating layer 27, a low-cost, high-reliability solder joint free from environmental pollution by lead can be obtained.
【００２９】すなわち、銅箔導体12と錫−亜鉛系はんだ
合金バンプ16との間に、亜鉛の拡散を防止する亜鉛拡散
防止層としての錫メッキ層15またはニッケルメッキ層27
を設けることにより、銅−亜鉛金属間化合物層の生成を
抑制する。That is, between the copper foil conductor 12 and the tin-zinc-based solder alloy bump 16, a tin plating layer 15 or a nickel plating layer 27 as a zinc diffusion preventing layer for preventing the diffusion of zinc.
The formation of a copper-zinc intermetallic compound layer is suppressed.
【００３０】ニッケルメッキ層27は電解メッキ、無電解
メッキを含むメッキ法により形成することができる。価
格を考慮した場合、スパッタリング法より電解メッキ法
または無電解メッキ法が好ましい。さらに、高密度化や
厚付けを考慮した場合は、電解メッキ法より無電解メッ
キ法が好ましい。このメッキ法では、メッキ液の添加物
の燐やホウ素を含有することになるが、特性上の問題は
無い。The nickel plating layer 27 can be formed by a plating method including electrolytic plating and electroless plating. In consideration of the price, the electrolytic plating method or the electroless plating method is preferable to the sputtering method. Further, in consideration of high density and thickening, an electroless plating method is preferable to an electrolytic plating method. In this plating method, phosphorus and boron as additives of the plating solution are contained, but there is no problem in characteristics.
【００３１】また、ニッケルには、はんだが濡れにくい
性質があるため、ニッケルメッキ層27の表面に薄く金メ
ッキ層または金メッキ膜を施すことが、はんだ濡れ性を
確保して確実なはんだ接合をする観点から好ましい。Further, since nickel has a property that solder is hard to wet, it is necessary to apply a thin gold plating layer or a gold plating film on the surface of the nickel plating layer 27 in order to ensure solder wettability and perform reliable solder bonding. Is preferred.
【００３２】さらに、薄い金メッキ膜の膜厚均一性を得
るために、下地にパラジウムメッキ層または膜を施すこ
とが望ましい。Further, in order to obtain a uniform thickness of the thin gold plating film, it is desirable to apply a palladium plating layer or a film as a base.
【００３３】また、同様の電解メッキ、無電解メッキを
含むメッキ法により錫メッキ層15を銅箔導体12上に設け
る。Further, a tin plating layer 15 is provided on the copper foil conductor 12 by a plating method including the same electrolytic plating and electroless plating.
【００３４】この錫メッキ層15の厚みは、数ミクロンか
ら５ミクロン程度が好ましく、錫−亜鉛系はんだ合金バ
ンプ16を形成する前にフュージング（加熱）して、銅−
錫金属間化合物層14を形成しておくことができる。この
銅−錫金属間化合物層14により、亜鉛の拡散を抑えるこ
とが可能となり、信頼性を向上させることができる。The thickness of the tin plating layer 15 is preferably about several microns to 5 microns, and is fused (heated) before forming the tin-zinc solder alloy bumps 16 to form
The tin intermetallic compound layer 14 can be formed. This copper-tin intermetallic compound layer 14 makes it possible to suppress the diffusion of zinc, thereby improving reliability.
【００３５】基板側の錫−亜鉛系はんだ合金バンプ16の
ように、亜鉛を含有した錫基合金には、その機械的特性
の向上や、融点降下のために銀、銅、ビスマス、インジ
ウムおよびニッケルのうち、少なくとも１元素を１０質
量％以下添加する。As with the tin-zinc solder bumps 16 on the substrate side, tin-based alloys containing zinc include silver, copper, bismuth, indium and nickel in order to improve their mechanical properties and lower the melting point. Of these, at least one element is added in an amount of 10% by mass or less.
【００３６】チップ側の錫基はんだ合金バンプ25は、錫
に、同様の銀、銅、ビスマス、インジウムおよびニッケ
ルのうち、少なくとも１元素を１０質量％以下添加した
ものであり、この添加により、錫基はんだ合金バンプ25
の機械的特性の向上や、融点の降下を図る。The tin-based solder alloy bump 25 on the chip side is obtained by adding at least one element of 10% by mass or less of the same silver, copper, bismuth, indium and nickel to tin. Base solder alloy bump 25
To improve the mechanical properties and lower the melting point.
【００３７】例えば、銀は約３．５質量％、銅およびニ
ッケルはそれぞれ１質量％以下、ビスマスおよびインジ
ウムはそれぞれ１０質量％以下である。For example, silver is about 3.5% by weight, copper and nickel are each 1% by weight or less, and bismuth and indium are each 10% by weight or less.
【００３８】このようにして、各はんだ合金バンプ16，
25は、蒸着法やメッキ法にて形成可能であるが、印刷法
やボール転写法、スーパージャフィット（昭和電工株式
会社所有の登録商標）法などの方法で形成しても良い。Thus, each solder alloy bump 16,
25 can be formed by a vapor deposition method or a plating method, but may be formed by a method such as a printing method, a ball transfer method, or a Super Jaffite (a registered trademark owned by Showa Denko KK).
【００３９】また、基板側の亜鉛を含有した錫基はんだ
合金は、ペースト状のものを、錫メッキ層またはニッケ
ルメッキ層により拡散防止処理を施した銅箔導体パッド
上に供給し、加熱溶融して、チップ側の錫基はんだ合金
バンプ25との接合を図っても良い。The zinc-containing tin-based solder alloy on the substrate side is supplied in paste form onto a copper foil conductor pad that has been subjected to a diffusion preventing treatment with a tin plating layer or a nickel plating layer, and is heated and melted. Thus, bonding with the tin-based solder alloy bump 25 on the chip side may be achieved.
【００４０】樹脂基板11およびシリコンチップ21にバン
プ形成した後は、樹脂基板11上にシリコンチップ21を位
置合わせした後マウントし、基板側の錫−亜鉛系はんだ
合金バンプ16とチップ側の錫基はんだ合金バンプ25とを
加圧して電気的接合がとれた後に、樹脂を流し込んで加
熱硬化させることで接触保持して、機械的および電気的
に接合するか、または、加熱加圧により固相拡散により
接合しても良い。さらには、リフロー加熱によりはんだ
合金バンプ16，25を溶融接合して、はんだ合金バンプ26
を得るようにしても良い。After the bumps are formed on the resin substrate 11 and the silicon chip 21, the silicon chip 21 is positioned on the resin substrate 11 and mounted, and the tin-zinc solder alloy bump 16 on the substrate side and the tin-based solder alloy on the chip side are mounted. After the solder alloy bump 25 is pressed and electrically connected, the resin is poured in and cured by heating, and the contact is maintained by mechanical and electrical bonding, or solid phase diffusion by heating and pressing May be joined together. Further, the solder alloy bumps 16 and 25 are melt-bonded by reflow heating to form the solder alloy bump 26
May be obtained.
【００４１】[0041]
【実施例】図１に示されたはんだ接続部は、樹脂基板11
上の銅箔導体12のパッド部分に無電解メッキで錫メッキ
層15を３μｍ設け、フュージングにより銅−錫金属間化
合物層14を形成した後に、Ｓｎ−９Ｚｎはんだ合金バン
プ16をプリコートする。このＳｎ−９Ｚｎはんだ合金バ
ンプ16の融点は、１９９℃であり、比較的低融点であ
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The solder connection shown in FIG.
A tin plating layer 15 is formed by electroless plating on the pad portion of the upper copper foil conductor 12 to a thickness of 3 μm. After forming a copper-tin intermetallic compound layer 14 by fusing, a Sn-9Zn solder alloy bump 16 is pre-coated. The melting point of the Sn-9Zn solder alloy bump 16 is 199 ° C., which is relatively low.
【００４２】対向するシリコンチップ21には、Ａｌ電極
パッド22上にＵＢＭ層（Ｃｒ ０．１μｍ、Ｎｉ ０．３
μｍ、Ｃｕ ０．３μｍ）23を介して、Ｓｎ−３．５Ａ
ｇはんだ合金バンプ25を形成する。On the opposing silicon chip 21, a UBM layer (Cr 0.1 μm, Ni 0.3
μm, Cu 0.3 μm) via Sn-3.5A
g Solder alloy bumps 25 are formed.
【００４３】Ｓｎ−９Ｚｎはんだ合金バンプ16は、スー
パージャフィット（昭和電工株式会社所有の登録商標）
法にてプリコート処理を施した。The Sn-9Zn solder alloy bump 16 is a Super Jaffite (registered trademark owned by Showa Denko KK)
A pre-coating treatment was performed by the method.
【００４４】チップ側のＳｎ−３．５Ａｇはんだ合金バ
ンプ25は、印刷法にて形成した。パッド寸法は、共に
０．１ｍｍ角で、バンプ高さは、基板側のＳｎ−９Ｚｎ
はんだ合金バンプ16で０．０５ｍｍ、チップ側のＳｎ−
３．５Ａｇはんだ合金バンプ25で０．０７ｍｍ程度の高
さになるよう調整した。樹脂基板11側にプリコートされ
たＳｎ−９Ｚｎはんだ合金バンプ16は、一定加重を加え
てフラッタニング処理を施した。The Sn-3.5Ag solder alloy bump 25 on the chip side was formed by a printing method. The pad dimensions are both 0.1 mm square, and the bump height is Sn-9Zn on the substrate side.
Solder alloy bump 16 0.05mm, chip side Sn-
The height of the 3.5 Ag solder alloy bump 25 was adjusted to about 0.07 mm. The Sn-9Zn solder alloy bump 16 pre-coated on the resin substrate 11 was subjected to a flattening process by applying a constant weight.
【００４５】これらのはんだプリコートを施した樹脂基
板11およびシリコンチップ21は、一例として、フリップ
チップボンダを用いて加熱加圧して溶融接合させた。ま
た、一例として、マウント後に、リフロー炉で溶融接合
させた。The resin substrate 11 and the silicon chip 21 having been subjected to the solder pre-coating were, as an example, fused and joined by applying heat and pressure using a flip chip bonder. In addition, as an example, after mounting, fusion bonding was performed in a reflow furnace.
【００４６】フリップチップボンダを用いた場合、加熱
条件はボンディングツール温度を３００℃に設定し、樹
脂基板11側は１００℃とした。溶融後は、ボンディング
ツールを調整して、はんだが円柱状になるように制御し
た。When a flip chip bonder was used, the heating conditions were such that the temperature of the bonding tool was set at 300 ° C. and the temperature of the resin substrate 11 was set at 100 ° C. After the melting, the bonding tool was adjusted so that the solder was controlled to have a columnar shape.
【００４７】一方、リフロー炉を用いた場合、リフロー
温度２３０℃で、酸素濃度１００ppmとした。この場
合、はんだ合金バンプ26の形状は樽型となり、フリップ
チップボンダの場合とは形状が異なる。On the other hand, when a reflow furnace was used, the reflow temperature was 230 ° C., and the oxygen concentration was 100 ppm. In this case, the shape of the solder alloy bump 26 is a barrel shape, which is different from that of the flip chip bonder.
【００４８】このようにして得られたはんだ接合部を持
つ試料の接続強度を比較するために、銅箔導体パッド上
にＳｎ−３．５Ａｇはんだをプリコートした試料と、上
記シリコンチップ21を接合した試料とを作製し、温度サ
イクル試験を行った結果、同等の強度を有することを確
認した。In order to compare the connection strength of the sample having the solder joint thus obtained, the sample in which Sn-3.5Ag solder was precoated on a copper foil conductor pad and the silicon chip 21 were joined. A sample was prepared and subjected to a temperature cycle test. As a result, it was confirmed that the sample had the same strength.
【００４９】次に、図２に示されるはんだ接続部では、
銅箔導体12のパッド上に無電解メッキ法によりニッケル
メッキ層（５μｍ）27を形成し、このニッケルメッキ層
27上に０．０５μｍのフラッシュ金メッキ層を施した上
に、Ｓｎ−８Ｚｎ−３Ｂｉはんだ合金バンプ16をプリコ
ートし、Ｓｎ−３．５Ａｇはんだ合金バンプ25を有する
シリコンチップ21と接合した場合も、ほぼ同様な強度が
得られることを確認した。この場合、ニッケルメッキ層
27と金メッキ層の間にパラジウムメッキ層を施し、フラ
ッシュ金メッキ層の厚み均一性の調整を施すと、プリコ
ートはんだの塗布量が安定する。Next, in the solder connection shown in FIG.
A nickel plating layer (5 μm) 27 is formed on a pad of the copper foil conductor 12 by an electroless plating method.
Also, when a 0.05 μm flash gold plating layer is applied on the substrate 27 and a Sn-8Zn-3Bi solder alloy bump 16 is pre-coated and bonded to a silicon chip 21 having a Sn-3.5Ag solder alloy bump 25, almost It was confirmed that similar strength was obtained. In this case, the nickel plating layer
When a palladium plating layer is applied between 27 and the gold plating layer, and the thickness uniformity of the flash gold plating layer is adjusted, the application amount of the precoat solder is stabilized.
【００５０】以上のように、錫−亜鉛系の低融点はんだ
を用いることで、溶融接合温度を低コストで従来と同様
にできると共に、銅箔導体パッドと錫−亜鉛系はんだ合
金との間に生成されて機械的信頼性を損ねる銅−亜鉛金
属間化合物層の生成を、亜鉛拡散防止層としての錫層ま
たはニッケル層により抑制することで、低コストで信頼
性が高く、かつ鉛による環境汚染の無いはんだ接合が得
られる。As described above, the use of the tin-zinc-based low-melting-point solder makes it possible to lower the fusion bonding temperature at a low cost as in the conventional case, and also allows the copper-foil conductor pad to be interposed between the tin-zinc-based solder alloy. By suppressing the formation of a copper-zinc intermetallic compound layer that is generated and impairs mechanical reliability by a tin layer or a nickel layer as a zinc diffusion preventing layer, low cost, high reliability, and environmental pollution by lead Solder-free soldering is obtained.
【００５１】[0051]
【発明の効果】請求項１記載の発明によれば、環境に有
害な鉛でなく環境に無害でコストパフォーマンスに優れ
た亜鉛を含んだ錫−亜鉛系はんだ合金の低価格、低融点
を活かしつつ、錫またはニッケルを含む亜鉛拡散防止層
により亜鉛の拡散を防止することで、機械的強度の低い
脆弱な銅−亜鉛金属間化合物層の生成およびボイドの生
成を防止でき、これらの生成に伴う機械的信頼性の低下
を防止できるから、信頼性の高いはんだ接合を確保でき
る。According to the first aspect of the present invention, a low-cost, low-melting tin-zinc-based solder alloy containing zinc, which is not harmful to the environment but is harmless to the environment and excellent in cost performance, is used instead of lead, which is harmful to the environment. , Tin or nickel prevents the diffusion of zinc by a zinc diffusion preventing layer, thereby preventing the formation of a fragile copper-zinc intermetallic compound layer having low mechanical strength and the formation of voids, Therefore, a reliable solder joint can be secured.
【００５２】請求項２記載の発明によれば、錫基はんだ
合金バンプは、錫に、銀、銅、ビスマス、インジウムお
よびニッケルの中の少なくとも１元素を含むことで、機
械的特性が向上するとともに融点が降下するから、鉛を
含まないが融点の比較的低い錫−亜鉛系はんだ合金バン
プと溶融接合される場合は、溶融接合時の溶融温度を部
品の耐熱温度以内での温度上昇に留めることができる。According to the second aspect of the invention, the tin-based solder alloy bump has improved mechanical properties by containing at least one element of silver, copper, bismuth, indium and nickel in tin. Since the melting point is lowered, when melting with a tin-zinc-based solder alloy bump that does not contain lead but has a relatively low melting point, the melting temperature during fusion bonding must be kept within the heat-resistant temperature of the component. Can be.
【００５３】請求項３記載の発明によれば、スパッタ法
などより電解メッキや無電解メッキの方が、高密度化と
低価格化を図ることができる。According to the third aspect of the present invention, higher density and lower cost can be achieved by electrolytic plating or electroless plating than by sputtering or the like.
【００５４】請求項４記載の発明によれば、はんだ濡れ
性の良くない亜鉛拡散防止層であっても、その亜鉛拡散
防止層に金層を施すことにより、はんだ合金バンプのは
んだ濡れ性を改善でき、確実なはんだ接合を得ることが
できる。According to the fourth aspect of the present invention, even if the zinc diffusion preventing layer has poor solder wettability, the gold wettability is applied to the zinc diffusion prevention layer to improve the solder wettability of the solder alloy bump. And a reliable solder joint can be obtained.
【００５５】請求項５記載の発明によれば、金層の下地
にパラジウム層を施すことにより、薄い金層の厚みの均
一性を確保できる。According to the fifth aspect of the present invention, the uniformity of the thickness of the thin gold layer can be ensured by applying the palladium layer to the base of the gold layer.
【００５６】請求項６記載の発明によれば、錫を含む亜
鉛拡散防止層と下地の銅との間に形成された銅−錫金属
間化合物層によっても、亜鉛の拡散を抑えることがで
き、信頼性を向上できる。According to the sixth aspect of the present invention, the diffusion of zinc can be suppressed by the copper-tin intermetallic compound layer formed between the zinc-containing zinc diffusion preventing layer and the underlying copper. Reliability can be improved.
【００５７】請求項７記載の発明によれば、ニッケルを
含む亜鉛拡散防止層と錫−亜鉛系はんだ合金バンプとの
間に形成されたニッケル−錫金属間化合物層によって
も、亜鉛の拡散を抑えることができ、信頼性を向上でき
る。According to the present invention, the diffusion of zinc is suppressed by the nickel-tin intermetallic compound layer formed between the zinc diffusion preventing layer containing nickel and the tin-zinc solder alloy bump. And reliability can be improved.
【００５８】請求項８記載の発明によれば、錫−亜鉛系
はんだ合金バンプが、第３元素として銀、銅、ビスマ
ス、インジウムおよびニッケルのうち、少なくとも１元
素を含むことにより、錫−亜鉛系はんだ合金バンプの機
械的特性の向上や、融点の降下を図ることができる。According to the present invention, the tin-zinc based solder alloy bump contains at least one of silver, copper, bismuth, indium and nickel as the third element. The mechanical properties of the solder alloy bump can be improved and the melting point can be reduced.
【図１】本発明に係るはんだ接続部の一実施の形態を示
す断面図であり、（Ａ）は溶融接合前の状態を示し、
（Ｂ）は溶融接合後の状態を示す。FIG. 1 is a cross-sectional view showing one embodiment of a solder connection portion according to the present invention, wherein (A) shows a state before fusion bonding;
(B) shows the state after fusion bonding.
【図２】本発明に係るはんだ接続部の他の実施の形態を
示す断面図であり、（Ａ）は溶融接合前の状態を示し、
（Ｂ）は溶融接合後の状態を示す。FIG. 2 is a cross-sectional view showing another embodiment of the solder connection portion according to the present invention, wherein (A) shows a state before fusion bonding;
(B) shows the state after fusion bonding.
12 導体としての銅箔導体 14 銅−錫金属間化合物層 15 亜鉛拡散防止層としての錫メッキ層 16 錫−亜鉛系はんだ合金バンプ 25 錫基はんだ合金バンプ 26 錫−亜鉛系はんだ合金を含むはんだ合金バンプ 27 亜鉛拡散防止層としてのニッケルメッキ層 28 ニッケル−錫金属間化合物層 12 Copper foil conductor as conductor 14 Copper-tin intermetallic compound layer 15 Tin plating layer as zinc diffusion prevention layer 16 Tin-zinc based solder alloy bump 25 Tin-based solder alloy bump 26 Solder alloy including tin-zinc based solder alloy Bump 27 Nickel plating layer as zinc diffusion prevention layer 28 Nickel-tin intermetallic compound layer
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０５Ｋ 3/34 ５０７ Ｈ０５Ｋ 3/34 ５１２Ｃ ５１２ Ｈ０１Ｌ 21/92 ６０３Ｂ Ｆターム(参考） 5E319 AA01 AC02 AC18 BB01 BB04 BB05 BB08 BB10 CC36 CD26 CD29 GG03 GG13 GG15 5E343 AA02 AA12 BB17 BB24 BB25 BB34 BB44 BB48 BB54 BB71 BB72 DD02 DD33 DD43 FF01 FF16 GG02 GG18 5F044 KK16 LL01 LL04 QQ03 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H05K 3/34 507 H05K 3/34 512C 512 H01L 21/92 603B F-term (Reference) 5E319 AA01 AC02 AC18 BB01 BB04 BB05 BB08 BB10 CC36 CD26 CD29 GG03 GG13 GG15 5E343 AA02 AA12 BB17 BB24 BB25 BB34 BB44 BB48 BB54 BB71 BB72 DD02 DD33 DD43 FF01 FF16 GG02 GG18 5F044 KK16 LL01 LL04 QQ03
Claims (8)
む亜鉛拡散防止層と、 亜鉛拡散防止層に形成された錫−亜鉛系はんだ合金を含
むはんだ合金バンプとを具備したことを特徴とするはん
だ接続部。1. A conductor containing copper, a zinc diffusion preventing layer formed on the conductor and containing one of tin and nickel, and a solder alloy bump containing a tin-zinc solder alloy formed on the zinc diffusion preventing layer A solder connection portion comprising:
ス、インジウムおよびニッケルの中の少なくとも１元素
を含む錫基はんだ合金バンプとを突き合わせて、接触保
持、固相拡散および溶融接合のいずれか一方により設け
られたことを特徴とする請求項１記載のはんだ接続部。2. A solder alloy bump comprising: a tin-zinc solder alloy bump; and a tin-based solder alloy bump containing at least one element of silver, copper, bismuth, indium and nickel in tin, and contacting the solder alloy bump. The solder connection according to claim 1, wherein the solder connection is provided by any one of holding, solid-phase diffusion, and fusion bonding.
地の銅の導体上に形成され、燐やホウ素などの不純物を
含むことを特徴とする請求項１または２記載のはんだ接
続部。3. The zinc diffusion preventing layer is formed on an underlying copper conductor by one of electrolytic plating and electroless plating, and contains an impurity such as phosphorus or boron. Solder connection as described.
する請求項１乃至３のいずれかに記載のはんだ接続部。4. The solder joint according to claim 1, wherein the solder alloy bump is formed on the zinc diffusion preventing layer via a gold layer.
を介して形成されたことを特徴とする請求項４記載のは
んだ接続部。5. The solder connection according to claim 4, wherein the gold layer is formed on the zinc diffusion preventing layer via a palladium layer.
間に形成された銅−錫金属間化合物層を具備したことを
特徴とする請求項１乃至５のいずれかに記載のはんだ接
続部。6. The solder according to claim 1, further comprising a copper-tin intermetallic compound layer formed between the zinc-containing zinc diffusion preventing layer and the underlying copper. Connection.
鉛系はんだ合金バンプとの間に形成されたニッケル−錫
金属間化合物層を具備したことを特徴とする請求項１乃
至５のいずれかに記載のはんだ接続部。7. The semiconductor device according to claim 1, further comprising a nickel-tin intermetallic compound layer formed between the zinc-containing zinc diffusion preventing layer and the tin-zinc-based solder alloy bump. Solder connection described in the above.
ッケルのうち、少なくとも１元素を含むことを特徴とす
る請求項１乃至７のいずれかに記載のはんだ接続部。8. The solder bump according to claim 1, wherein the tin-zinc solder bump contains at least one of silver, copper, bismuth, indium and nickel as the third element. Solder joints.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000115473A JP3475147B2 (en) | 2000-04-17 | 2000-04-17 | Solder connection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000115473A JP3475147B2 (en) | 2000-04-17 | 2000-04-17 | Solder connection |
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| Publication Number | Publication Date |
|---|---|
| JP2001298051A true JP2001298051A (en) | 2001-10-26 |
| JP3475147B2 JP3475147B2 (en) | 2003-12-08 |
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ID=18627107
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000115473A Expired - Fee Related JP3475147B2 (en) | 2000-04-17 | 2000-04-17 | Solder connection |
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