JP2001210315A - Electrode for lithium secondary battery and lithium secondary battery using it - Google Patents
Electrode for lithium secondary battery and lithium secondary battery using itInfo
- Publication number
- JP2001210315A JP2001210315A JP2000015295A JP2000015295A JP2001210315A JP 2001210315 A JP2001210315 A JP 2001210315A JP 2000015295 A JP2000015295 A JP 2000015295A JP 2000015295 A JP2000015295 A JP 2000015295A JP 2001210315 A JP2001210315 A JP 2001210315A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- silicon thin
- electrode
- secondary battery
- lithium secondary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、リチウムを吸蔵・
放出する活物質を含むリチウム二次電池用電極に関する
ものである。TECHNICAL FIELD The present invention relates to a method for storing lithium.
The present invention relates to a lithium secondary battery electrode containing an active material to be released.
【０００２】[0002]
【従来の技術】近年、研究開発が盛んに行われているリ
チウム二次電池は、用いられる電極により充放電電圧、
充放電サイクル寿命特性、保存特性などの電池特性が大
きく左右される。このことから、電極活物質を改善する
ことにより、電池特性の向上が図られている。2. Description of the Related Art In recent years, a lithium secondary battery, which has been actively researched and developed, has a charge / discharge voltage,
Battery characteristics such as charge-discharge cycle life characteristics and storage characteristics are greatly affected. For this reason, the battery characteristics have been improved by improving the electrode active material.
【０００３】負極活物質としてリチウム金属を用いる
と、重量当り及び体積当りともに高いエネルギー密度の
電池を構成することができるが、充電時にリチウムがデ
ンドライト状に析出し、内部短絡を引き起こすという問
題があった。[0003] When lithium metal is used as the negative electrode active material, a battery having a high energy density per weight and per volume can be formed. However, there is a problem that lithium is deposited in a dendrite shape during charging and causes an internal short circuit. Was.
【０００４】これに対し、充電の際に電気化学的にリチ
ウムと合金化するアルミニウム、シリコン、錫などを電
極として用いるリチウム二次電池が報告されている（So
lidState Ionics, 113-115, p57(1998)）。これらのう
ち、特にシリコンは理論容量が大きく、高い容量を示す
電池用負極として有望であり、これを負極とする種々の
二次電池が提案されている（特開平１０−２５５７６８
号公報）。しかしながら、この種の合金負極は、電極活
物質である合金自体が充放電により微粉化し集電特性が
悪化することから、十分なサイクル特性は得られていな
い。On the other hand, there has been reported a lithium secondary battery using, as an electrode, aluminum, silicon, tin or the like which electrochemically alloys with lithium during charging (So).
lidState Ionics, 113-115, p57 (1998)). Among these, silicon is particularly promising as a battery negative electrode having a large theoretical capacity and a high capacity, and various secondary batteries using this as a negative electrode have been proposed (Japanese Patent Application Laid-Open No. 10-255768).
No.). However, in this type of alloy negative electrode, sufficient cycle characteristics have not been obtained because the alloy itself, which is an electrode active material, is pulverized by charging and discharging and the current collecting characteristics are deteriorated.
【０００５】[0005]
【発明が解決しようとする課題】本出願人は、プラズマ
ＣＶＤ法等により、銅箔等の金属箔上に形成したシリコ
ン薄膜をリチウム二次電池用負極として用いることによ
り、充放電容量が高く、かつ充放電サイクル特性に優れ
たリチウム二次電池とすることができることを見出した
（特願平１１−３０１６７９号）。SUMMARY OF THE INVENTION The present applicant uses a silicon thin film formed on a metal foil such as a copper foil by a plasma CVD method or the like as a negative electrode for a lithium secondary battery, thereby achieving a high charge / discharge capacity. It has been found that a lithium secondary battery having excellent charge / discharge cycle characteristics can be obtained (Japanese Patent Application No. 11-301679).
【０００６】ところで、リチウム二次電池においては、
その他の二次電池と同様に、急速充電が可能であること
が望まれており、このため高い電流密度で充電できるこ
とが求められている。By the way, in a lithium secondary battery,
Like other secondary batteries, it is desired that rapid charging is possible, and therefore it is required that the battery can be charged at a high current density.
【０００７】本発明の目的は、高い電流密度で充電する
ことができ、かつ充放電容量が高く、充放電サイクル特
性に優れたリチウム二次電池用電極及びこれを用いたリ
チウム二次電池を提供することにある。An object of the present invention is to provide a lithium secondary battery electrode which can be charged at a high current density, has a high charge / discharge capacity, and has excellent charge / discharge cycle characteristics, and a lithium secondary battery using the same. Is to do.
【０００８】[0008]
【課題を解決するための手段】本発明のリチウム二次電
池用電極は、リチウムを吸蔵・放出する活物質を含むリ
チウム二次電池用電極であり、リン、酸素、及び窒素か
ら選ばれる少なくとも１種の不純物を含有する微結晶シ
リコン薄膜または非晶質シリコン薄膜を前記活物質とし
て用いたことを特徴としている。The electrode for a lithium secondary battery according to the present invention is an electrode for a lithium secondary battery containing an active material for absorbing and releasing lithium, and at least one selected from phosphorus, oxygen and nitrogen. A microcrystalline silicon thin film or an amorphous silicon thin film containing various kinds of impurities is used as the active material.
【０００９】微結晶シリコン薄膜は、ラマン分光分析に
おいて、結晶領域に対応する５２０ｃｍ-1近傍のピーク
と、非晶質領域に対応する４８０ｃｍ-1近傍のピークの
両方が実質的に検出されるシリコン薄膜である。また、
非晶質シリコン薄膜は、ラマン分光分析において、結晶
領域に対応する５２０ｃｍ-1近傍のピークが実質的に検
出されず、非晶質領域に対応する４８０ｃｍ-1近傍のピ
ークが実質的に検出されるシリコン薄膜である。In a microcrystalline silicon thin film, in Raman spectroscopic analysis, both a peak near 520 cm -1 corresponding to a crystalline region and a peak near 480 cm -1 corresponding to an amorphous region are substantially detected. It is a thin film. Also,
In the amorphous silicon thin film, a peak near 520 cm -1 corresponding to a crystalline region is not substantially detected in Raman spectroscopy, and a peak near 480 cm -1 corresponding to an amorphous region is substantially detected. Silicon thin film.
【００１０】本発明において、上記シリコン薄膜に含ま
れるリンの濃度は、１×１０17〜１×１０22ｃｍ-3であ
ることが好ましい。また、上記シリコン薄膜に含まれる
酸素の濃度は、１×１０18〜１×１０22ｃｍ-3であるこ
とが好ましい。また、上記シリコン薄膜に含まれる窒素
の濃度は、１×１０18〜１×１０22ｃｍ-3であることが
好ましい。なお、リン、酸素、及び窒素のシリコン薄膜
中の濃度は、二次イオン質量分析（ＳＩＭＳ）より測定
することができる。In the present invention, the concentration of phosphorus contained in the silicon thin film is preferably 1 × 10 17 to 1 × 10 22 cm −3 . The concentration of oxygen contained in the silicon thin film is preferably 1 × 10 18 to 1 × 10 22 cm −3 . The concentration of nitrogen contained in the silicon thin film is preferably 1 × 10 18 to 1 × 10 22 cm −3 . Note that the concentrations of phosphorus, oxygen, and nitrogen in the silicon thin film can be measured by secondary ion mass spectrometry (SIMS).
【００１１】本発明において、リン、酸素、及び窒素か
ら選ばれる少なくとも１種の不純物（ドーパント）は、
一般的な半導体薄膜への不純物のドーピングと同様の方
法によりシリコン薄膜中に含有させることができる。例
えば、シランガスなどのシリコン薄膜原料ガス中に不純
物の原料ガスを混合し、プラズマＣＶＤ法などのＣＶＤ
法によりシリコン薄膜を形成し、シリコン薄膜中に不純
物を含有させてもよい。また、シリコン薄膜形成後、イ
オン注入法などの方法により不純物を含有させてもよ
い。また、予め不純物を含有させたシリコンをターゲッ
トなどとして用いて、スパッタリング法などにより、不
純物を含有したシリコン薄膜を形成してもよい。In the present invention, at least one impurity (dopant) selected from phosphorus, oxygen and nitrogen is:
It can be contained in a silicon thin film by a method similar to the method of doping an impurity into a general semiconductor thin film. For example, a raw material gas of an impurity is mixed with a raw material gas of a silicon thin film such as a silane gas, and a CVD method such as a plasma CVD method.
A silicon thin film may be formed by a method, and impurities may be contained in the silicon thin film. After the formation of the silicon thin film, impurities may be contained by a method such as an ion implantation method. Alternatively, a silicon thin film containing impurities may be formed by a sputtering method or the like using silicon containing impurities in advance as a target or the like.
【００１２】本発明においては、微結晶シリコン薄膜ま
たは非晶質シリコン薄膜を集電体上に設けることが好ま
しい。シリコン薄膜を集電体上に設ける方法としては、
集電体を基板として用い、この上にＣＶＤ法、スパッタ
リング法、真空蒸着法などの薄膜形成方法によりシリコ
ン薄膜を形成する方法が挙げられる。集電体としては、
好ましくは銅箔などの金属箔が用いられる。銅箔として
は、圧延銅箔及び電解銅箔などを用いることができる。
集電体に対するシリコン薄膜の密着性を高める観点から
は、表面粗さＲａの大きい銅箔である電解銅箔が好まし
く用いられる。In the present invention, it is preferable to provide a microcrystalline silicon thin film or an amorphous silicon thin film on a current collector. As a method of providing a silicon thin film on a current collector,
There is a method in which a current collector is used as a substrate, and a silicon thin film is formed thereon by a thin film forming method such as a CVD method, a sputtering method, or a vacuum evaporation method. As a current collector,
Preferably, a metal foil such as a copper foil is used. As the copper foil, a rolled copper foil, an electrolytic copper foil, or the like can be used.
From the viewpoint of enhancing the adhesion of the silicon thin film to the current collector, an electrolytic copper foil which is a copper foil having a large surface roughness Ra is preferably used.
【００１３】本発明のリチウム二次電池は、上記本発明
のリチウム二次電池用電極からなる負極と、正極と、非
水電解質とを備えるリチウム二次電池である。本発明の
リチウム二次電池に用いる電解質の溶媒は、特に限定さ
れるものではないが、エチレンカーボネート、プロピレ
ンカーボネート、ブチレンカーボネートなどの環状カー
ボネートと、ジメチルカーボネート、メチルエチルカー
ボネート、ジエチルカーボネートなどの鎖状カーボネー
トとの混合溶媒が例示される。また、前記環状カーボネ
ートと１，２−ジメトキシエタン、１，２−ジエトキシ
エタンなどのエーテル系溶媒との混合溶媒も例示され
る。また、電解質の溶質としては、ＬｉＰＦ6 、ＬｉＢ
Ｆ4 、ＬｉＣＦ3ＳＯ3 、ＬｉＮ（ＣＦ3ＳＯ2)2 、Ｌｉ
Ｎ（Ｃ2Ｆ5ＳＯ2)2 、ＬｉＮ（ＣＦ3ＳＯ2)(Ｃ4Ｆ9ＳＯ
2)、ＬｉＣ（ＣＦ3ＳＯ2)3 、ＬｉＣ（Ｃ2Ｆ5ＳＯ2)3
など及びそれらの混合物が例示される。さらに電解質と
して、ポリエチレンオキシド、ポリアクリロニトリルな
どのポリマー電解質に電解液を含浸したゲル状ポリマー
電解質や、ＬｉＩ、Ｌｉ3Ｎなどの無機固体電解質が例
示される。本発明のリチウム二次電池の電解質は、イオ
ン導電性を発現させる溶媒としてのＬｉ化合物とこれを
溶解・保持する溶媒が電池の充電時や放電時あるいは保
存時の電圧で分解しない限り、制約なく用いることがで
きる。The lithium secondary battery of the present invention is a lithium secondary battery comprising a negative electrode comprising the above-mentioned electrode for a lithium secondary battery of the present invention, a positive electrode, and a non-aqueous electrolyte. Solvent of the electrolyte used in the lithium secondary battery of the present invention is not particularly limited, and cyclic carbonates such as ethylene carbonate, propylene carbonate, and butylene carbonate, and dimethyl carbonate, methyl ethyl carbonate, and a chain-like solvent such as diethyl carbonate. A mixed solvent with carbonate is exemplified. Further, a mixed solvent of the cyclic carbonate and an ether solvent such as 1,2-dimethoxyethane and 1,2-diethoxyethane is also exemplified. The solutes of the electrolyte include LiPF 6 , LiB
F 4 , LiCF 3 SO 3 , LiN (CF 3 SO 2 ) 2 , Li
N (C 2 F 5 SO 2 ) 2 , LiN (CF 3 SO 2 ) (C 4 F 9 SO
2 ), LiC (CF 3 SO 2 ) 3 , LiC (C 2 F 5 SO 2 ) 3
And mixtures thereof. Examples of the electrolyte further include a gel polymer electrolyte obtained by impregnating an electrolyte with a polymer electrolyte such as polyethylene oxide and polyacrylonitrile, and an inorganic solid electrolyte such as LiI and Li 3 N. The electrolyte of the lithium secondary battery of the present invention is not limited, as long as the Li compound as a solvent that develops ionic conductivity and the solvent that dissolves and retains the Li compound are not decomposed at the time of charging or discharging or storing the battery. Can be used.
【００１４】本発明のリチウム二次電池の正極活物質と
しては、ＬｉＣｏＯ2 、ＬｉＮｉＯ 2 、ＬｉＭｎ
2Ｏ4 、ＬｉＭｎＯ2 、ＬｉＣｏ0.5Ｎｉ0.5Ｏ2 、Ｌｉ
Ｎｉ0.7Ｃｏ 0.2Ｍｎ0.1Ｏ2 などのリチウム含有遷移金
属酸化物や、ＭｎＯ2 などのリチウムを含有していない
金属酸化物が例示される。また、この他にも、リチウム
を電気化学的に挿入・脱離する物質であれば、制限なく
用いることができる。The positive electrode active material of the lithium secondary battery of the present invention
Is LiCoOTwo, LiNiO Two, LiMn
TwoOFour, LiMnOTwo, LiCo0.5Ni0.5OTwo, Li
Ni0.7Co 0.2Mn0.1OTwoSuch as lithium-containing transition gold
Oxide or MnOTwoDoes not contain lithium
Metal oxides are exemplified. In addition to this, lithium
Any substance can be inserted or removed electrochemically
Can be used.
【００１５】[0015]
【発明の実施の形態】以下、本発明を実施例に基づいて
さらに詳細に説明するが、本発明は下記の実施例の何ら
限定されるものではなく、その要旨を変更しない範囲に
おいて適宜変更して実施することが可能なものである。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in more detail with reference to examples. However, the present invention is not limited to the following examples, and may be appropriately changed without departing from the gist thereof. It can be implemented by
【００１６】〔電極の作製〕基板として電解銅箔（厚み
１７μｍ）を用い、この銅箔の上にプラズマＣＶＤ法に
より微結晶シリコン薄膜を形成した。シリコン薄膜形成
の原料ガスとしては、シラン（ＳｉＨ4 ）ガスを用い、
キャリアガスとしては水素ガスを用いた。実施例１で
は、シランガスに対し０．１％のＰＨ3ガスを混入し、
Ｐ（リン）ドープシリコン薄膜を形成した。実施例２で
は、シランガスに対し１％のＮ2ガスを混入し、Ｎ（窒
素）ドープシリコン薄膜を形成した。実施例３では、シ
ランガスに対し０．３％のＣＯ2ガスを混入し、Ｏ（酸
素）ドープシリコン薄膜を形成した。薄膜形成条件は、
原料ガス流量：１０ｓｃｃｍ、キャリアガス流量：２０
０ｓｃｃｍ、基板温度：１８０℃、反応圧力：４０Ｐ
ａ、高周波電力：５５５Ｗとした。比較例１では、シラ
ンガスに不純物の原料ガスを混入させずにノンドープシ
リコン薄膜を形成した。[Preparation of Electrode] An electrolytic copper foil (thickness: 17 μm) was used as a substrate, and a microcrystalline silicon thin film was formed on the copper foil by a plasma CVD method. A silane (SiH 4 ) gas is used as a raw material gas for forming a silicon thin film.
Hydrogen gas was used as a carrier gas. In Example 1, 0.1% PH 3 gas was mixed with silane gas,
A P (phosphorus) doped silicon thin film was formed. In Example 2, an N (nitrogen) -doped silicon thin film was formed by mixing 1% of N 2 gas with respect to silane gas. In Example 3, 0.3% CO 2 gas was mixed with silane gas to form an O (oxygen) -doped silicon thin film. The conditions for forming the thin film are as follows:
Source gas flow rate: 10 sccm, carrier gas flow rate: 20
0 sccm, substrate temperature: 180 ° C, reaction pressure: 40P
a, High-frequency power: 555 W. In Comparative Example 1, a non-doped silicon thin film was formed without mixing an impurity source gas into a silane gas.
【００１７】膜厚が２μｍになるまで上記の条件で微結
晶シリコン薄膜を銅箔上に堆積させた。得られたシリコ
ン薄膜の伝導度を測定したところ、実施例１のＰドープ
シリコン薄膜においては１０0ｃｍ-1Ω-1であり、実施
例２及び実施例３のＮドープシリコン薄膜及びＯドープ
シリコン薄膜においては１０-4ｃｍ-1Ω-1であり、比較
例１のノンドープシリコン薄膜においては１０-6ｃｍ-1
Ω-1以下であった。また、不純物含有量をＳＩＭＳによ
り測定したところ、実施例１〜３のいずれのシリコン薄
膜においても、不純物の含有率はシリコンに対し０．１
％であり、その濃度は５×１０20ｃｍ-3であった。以上
のようにして微結晶シリコン薄膜を形成した各電解銅箔
を２ｃｍ×２ｃｍの大きさに切り出し、実施例１〜３及
び比較例１の電極を作製した。A microcrystalline silicon thin film was deposited on a copper foil under the above conditions until the film thickness became 2 μm. The conductivity of the resulting silicon thin film was measured, in the P-doped silicon thin film of Example 1 was 10 0 cm -1 Ω -1, N-doped silicon thin film and O-doped silicon of Example 2 and Example 3 It is 10 -4 cm -1 Ω -1 for the thin film, and 10 -6 cm -1 for the non-doped silicon thin film of Comparative Example 1.
Ω -1 or less. Further, when the impurity content was measured by SIMS, the content of the impurity was 0.1% relative to silicon in any of the silicon thin films of Examples 1 to 3.
%, And the concentration was 5 × 10 20 cm −3 . Each electrodeposited copper foil on which the microcrystalline silicon thin film was formed as described above was cut into a size of 2 cm × 2 cm, and electrodes of Examples 1 to 3 and Comparative Example 1 were produced.
【００１８】〔充放電特性の測定〕上記で得られた実施
例１〜３及び比較例１の電極を作用極として用い、対極
及び参照極を金属リチウムとした試験セルを作製した。
電解液としては、エチレンカーボネートとジエチルカー
ボネートとの等体積混合溶媒に、ＬｉＰＦ6 を１モル／
リットル溶解したものを用いた。なお、単極の試験セル
では作用極の還元を充電とし、酸化を放電としている。[Measurement of Charging / Discharging Characteristics] Using the electrodes obtained in Examples 1 to 3 and Comparative Example 1 as working electrodes, test cells were prepared in which the counter electrode and the reference electrode were metallic lithium.
As an electrolytic solution, LiPF 6 was added to an equal volume mixed solvent of ethylene carbonate and diethyl carbonate at 1 mol / mol.
One liter dissolved was used. In the case of a single-electrode test cell, reduction of the working electrode is defined as charging, and oxidation is defined as discharging.
【００１９】上記各試験セルを、２５℃にて、表１に示
す一定の電流密度で参照極を基準とする電位が０Ｖに達
するまで充電した後、２Ｖに達するまで放電を行った。
この１サイクル目の充電容量及び充放電効率を測定し、
その結果を表１に示した。Each of the test cells was charged at 25 ° C. at a constant current density shown in Table 1 until the potential with respect to the reference electrode reached 0 V, and then discharged until the potential reached 2 V.
The charge capacity and charge / discharge efficiency of this first cycle were measured,
The results are shown in Table 1.
【００２０】[0020]
【表１】 [Table 1]
【００２１】表１に示す結果から明らかなように、本発
明に従い、リン、酸素、または窒素の不純物を含有させ
た微結晶シリコン薄膜を活物質として用いた実施例１〜
３においては、充電電流密度を高くした場合にも、高い
充電容量が得られている。特に、リンをドープした実施
例１においては、良好な結果が得られている。As is clear from the results shown in Table 1, Examples 1 to 4 using a microcrystalline silicon thin film containing an impurity of phosphorus, oxygen, or nitrogen as an active material according to the present invention.
In No. 3, a high charging capacity was obtained even when the charging current density was increased. In particular, in Example 1 doped with phosphorus, good results were obtained.
【００２２】上記実施例では、微結晶シリコン薄膜を活
物質として用いているが、非晶質シリコン薄膜を活物質
として用いた場合にも同様の効果が得られることが確認
されている。In the above embodiment, a microcrystalline silicon thin film is used as an active material. However, it has been confirmed that a similar effect can be obtained when an amorphous silicon thin film is used as an active material.
【００２３】[0023]
【発明の効果】本発明によれば、高い電流密度で充電す
ることができ、かつ充放電容量が高く、充放電サイクル
特性に優れたリチウム二次電池とすることができる。According to the present invention, a lithium secondary battery which can be charged at a high current density, has a high charge / discharge capacity, and has excellent charge / discharge cycle characteristics can be obtained.
Claims (7)
リチウム二次電池用電極において、リン、酸素、及び窒
素から選ばれる少なくとも１種の不純物を含有する微結
晶シリコン薄膜または非晶質シリコン薄膜を前記活物質
として用いたことを特徴とするリチウム二次電池用電
極。1. An electrode for a lithium secondary battery containing an active material for inserting and extracting lithium, wherein a microcrystalline silicon thin film or an amorphous silicon thin film containing at least one impurity selected from phosphorus, oxygen, and nitrogen. An electrode for a lithium secondary battery, characterized in that is used as the active material.
リコン薄膜に含まれるリンの濃度が１×１０17〜１×１
０22ｃｍ-3であることを特徴とする請求項１に記載のリ
チウム二次電池用電極。2. The method according to claim 1, wherein the concentration of phosphorus contained in the microcrystalline silicon thin film or the amorphous silicon thin film is 1 × 10 17 to 1 × 1.
The electrode for a lithium secondary battery according to claim 1, wherein the electrode has a thickness of 0 22 cm -3 .
リコン薄膜に含まれる酸素の濃度が１×１０18〜１×１
０22ｃｍ-3であることを特徴とする請求項１または２に
記載のリチウム二次電池用電極。3. The method according to claim 1, wherein the concentration of oxygen contained in the microcrystalline silicon thin film or the amorphous silicon thin film is 1 × 10 18 to 1 × 1.
The electrode for a lithium secondary battery according to claim 1, wherein the electrode has a thickness of 0 22 cm −3 .
リコン薄膜に含まれる窒素の濃度が１×１０18〜１×１
０22ｃｍ-3であることを特徴とする請求項１〜３のいず
れか１項に記載のリチウム二次電池用電極。4. The method according to claim 1, wherein the concentration of nitrogen contained in the microcrystalline silicon thin film or the amorphous silicon thin film is 1 × 10 18 to 1 × 1.
The electrode for a lithium secondary battery according to any one of claims 1 to 3, wherein the electrode has a diameter of 0 22 cm -3 .
リコン薄膜が集電体上に設けられていることを特徴とす
る請求項１〜４のいずれか１項に記載のリチウム二次電
池用電極。5. The electrode for a lithium secondary battery according to claim 1, wherein said microcrystalline silicon thin film or amorphous silicon thin film is provided on a current collector. .
る請求項５に記載のリチウム二次電池用電極。6. The electrode for a lithium secondary battery according to claim 5, wherein the current collector is a copper foil.
極からなる負極と、正極と、非水電解質とを備えること
を特徴とするリチウム二次電池。7. A lithium secondary battery comprising a negative electrode comprising the electrode according to claim 1, a positive electrode, and a non-aqueous electrolyte.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000015295A JP2001210315A (en) | 2000-01-25 | 2000-01-25 | Electrode for lithium secondary battery and lithium secondary battery using it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000015295A JP2001210315A (en) | 2000-01-25 | 2000-01-25 | Electrode for lithium secondary battery and lithium secondary battery using it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001210315A true JP2001210315A (en) | 2001-08-03 |
Family
ID=18542617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000015295A Pending JP2001210315A (en) | 2000-01-25 | 2000-01-25 | Electrode for lithium secondary battery and lithium secondary battery using it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001210315A (en) |
Cited By (66)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004022433A (en) * | 2002-06-19 | 2004-01-22 | Sanyo Electric Co Ltd | Negative electrode for lithium secondary battery, and lithium secondary battery |
| WO2004051768A1 (en) * | 2002-11-29 | 2004-06-17 | Mitsui Mining & Smelting Co., Ltd. | Negative electrode for non-aqueous electrolyte secondary cell and method for manufacture thereof, and non-aqueous electrolyte secondary cell |
| US6800400B2 (en) | 2001-04-19 | 2004-10-05 | Sanyo Electric Co., Ltd. | Lithium secondary battery |
| KR100659822B1 (en) | 2004-11-11 | 2006-12-19 | 마쯔시다덴기산교 가부시키가이샤 | Negative electrode for lithium ion secondary battery, production method thereof and lithium ion secondary battery comprising the same |
| JP2007188872A (en) * | 2005-12-13 | 2007-07-26 | Mitsubishi Chemicals Corp | Negative electrode material for nonaqueous electrolyte secondary battery, negative electrode for nonaqueous electrolyte secondary battery, and nonaqueous electrolyte secondary battery |
| JP2008081820A (en) * | 2006-09-28 | 2008-04-10 | Sumitomo Electric Ind Ltd | Film deposition system |
| US7407725B2 (en) | 2001-10-25 | 2008-08-05 | Sanyo Electric Co., Ltd. | Non-aqueous electrolyte secondary cell |
| JP2010135332A (en) * | 2002-11-05 | 2010-06-17 | Nexeon Ltd | Structured silicon anode |
| JP2010192444A (en) * | 2009-02-16 | 2010-09-02 | Samsung Electronics Co Ltd | Anode containing 14-group metal nanotube, lithium battery in which same is adopted, and its manufacturing method |
| US7816032B2 (en) | 2003-11-28 | 2010-10-19 | Panasonic Corporation | Energy device and method for producing the same |
| WO2010128681A1 (en) * | 2009-05-08 | 2010-11-11 | 古河電気工業株式会社 | Negative electrodes for secondary battery, copper foil for electrode, secondary battery, and processes for producing negative electrodes for secondary battery |
| JP2010282957A (en) * | 2009-05-08 | 2010-12-16 | Furukawa Electric Co Ltd:The | Negative electrode for secondary battery, copper foil for electrode, secondary battery, and process for producing the negative electrode for secondary battery |
| JP2011108639A (en) * | 2009-10-22 | 2011-06-02 | Ronald Anthony Rojeski | Electrode including collar stop |
| JP2012018911A (en) * | 2010-07-07 | 2012-01-26 | Samsung Sdi Co Ltd | Negative active material for lithium secondary battery and lithium secondary battery including the same |
| JP2012033472A (en) * | 2010-06-30 | 2012-02-16 | Semiconductor Energy Lab Co Ltd | Method of producing power storage device |
| CN102812581A (en) * | 2010-03-26 | 2012-12-05 | 株式会社半导体能源研究所 | Secondary battery and method for forming electrode of secondary battery |
| DE112011101878T5 (en) | 2010-06-01 | 2013-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Energy storage device and manufacturing method thereof |
| US8455044B2 (en) | 2010-11-26 | 2013-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, method for manufacturing the same, and power storage device |
| KR20130124337A (en) | 2010-12-07 | 2013-11-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Power storage device |
| US8658246B2 (en) | 2010-10-15 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of group of whiskers |
| US8669009B2 (en) | 2010-07-01 | 2014-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Positive electrode active material of power storage device, positive electrode of power storage device, power storage device, manufacturing method of positive electrode active material of power storage device |
| US8685569B2 (en) | 2011-08-19 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Electrode for power storage device and power storage device |
| US8814956B2 (en) | 2011-07-14 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device, electrode, and manufacturing method thereof |
| US8821601B2 (en) | 2011-01-21 | 2014-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Hydrogen generating element, hydrogen generation device, power generation device, and driving device |
| US8835048B2 (en) | 2010-06-11 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
| US8845764B2 (en) | 2010-06-14 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device comprising solid electrolyte layer over active material and second electrolyte and method of manufacturing the same |
| US8846530B2 (en) | 2010-06-30 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming semiconductor region and method for manufacturing power storage device |
| US8852294B2 (en) | 2010-05-28 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| US8871555B2 (en) | 2010-06-18 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| US8896098B2 (en) | 2010-05-28 | 2014-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| US8940438B2 (en) | 2009-02-16 | 2015-01-27 | Samsung Electronics Co., Ltd. | Negative electrode including group 14 metal/metalloid nanotubes, lithium battery including the negative electrode, and method of manufacturing the negative electrode |
| JP2015018821A (en) * | 2010-03-26 | 2015-01-29 | 株式会社半導体エネルギー研究所 | Secondary battery |
| US9076909B2 (en) | 2010-06-18 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
| US9083030B2 (en) | 2011-08-25 | 2015-07-14 | Samsung Sdi Co., Ltd. | Battery module |
| US9112224B2 (en) | 2010-06-30 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Energy storage device and method for manufacturing the same |
| US9129754B2 (en) | 2011-09-02 | 2015-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Electrode for power storage device and power storage device |
| US9136530B2 (en) | 2010-05-28 | 2015-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Energy storage device and manufacturing method thereof |
| US9183995B2 (en) | 2012-06-01 | 2015-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device and power storage device |
| US9281134B2 (en) | 2010-06-02 | 2016-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| US9337475B2 (en) | 2011-08-30 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
| US9349544B2 (en) | 2009-02-25 | 2016-05-24 | Ronald A Rojeski | Hybrid energy storage devices including support filaments |
| US9362549B2 (en) | 2011-12-21 | 2016-06-07 | Cpt Ip Holdings, Llc | Lithium-ion battery anode including core-shell heterostructure of silicon coated vertically aligned carbon nanofibers |
| US9384904B2 (en) | 2012-04-06 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device, method for forming the same, and power storage device |
| US9401247B2 (en) | 2011-09-21 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device and power storage device |
| US9412998B2 (en) | 2009-02-25 | 2016-08-09 | Ronald A. Rojeski | Energy storage devices |
| US9431181B2 (en) | 2009-02-25 | 2016-08-30 | Catalyst Power Technologies | Energy storage devices including silicon and graphite |
| US9543577B2 (en) | 2010-12-16 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Active material, electrode including the active material and manufacturing method thereof, and secondary battery |
| TWI568065B (en) * | 2011-08-30 | 2017-01-21 | 半導體能源研究所股份有限公司 | Power storage device and method for manufacturing electrode |
| US9620769B2 (en) | 2011-06-24 | 2017-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device, electrode thereof, and method for manufacturing power storage device |
| US9685275B2 (en) | 2010-04-28 | 2017-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| US9705136B2 (en) | 2008-02-25 | 2017-07-11 | Traverse Technologies Corp. | High capacity energy storage |
| US9799461B2 (en) | 2011-09-02 | 2017-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing electrode |
| US9815691B2 (en) | 2011-08-19 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode |
| US9917300B2 (en) | 2009-02-25 | 2018-03-13 | Cf Traverse Llc | Hybrid energy storage devices including surface effect dominant sites |
| US9929407B2 (en) | 2011-12-21 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for non-aqueous secondary battery, non-aqueous secondary battery, and manufacturing methods thereof |
| US9941709B2 (en) | 2009-02-25 | 2018-04-10 | Cf Traverse Llc | Hybrid energy storage device charging |
| US9960225B2 (en) | 2010-06-30 | 2018-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of power storage device |
| US9966197B2 (en) | 2009-02-25 | 2018-05-08 | Cf Traverse Llc | Energy storage devices including support filaments |
| US9979017B2 (en) | 2009-02-25 | 2018-05-22 | Cf Traverse Llc | Energy storage devices |
| US10056602B2 (en) | 2009-02-25 | 2018-08-21 | Cf Traverse Llc | Hybrid energy storage device production |
| US10072331B2 (en) | 2011-07-08 | 2018-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming silicon film and method for manufacturing power storage device |
| US10193142B2 (en) | 2008-02-25 | 2019-01-29 | Cf Traverse Llc | Lithium-ion battery anode including preloaded lithium |
| US10388467B2 (en) | 2012-11-07 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Electrode for power storage device, power storage device, and manufacturing method of electrode for power storage device |
| US10665858B2 (en) | 2009-02-25 | 2020-05-26 | Cf Traverse Llc | Energy storage devices |
| US11075378B2 (en) | 2008-02-25 | 2021-07-27 | Cf Traverse Llc | Energy storage devices including stabilized silicon |
| US11233234B2 (en) | 2008-02-25 | 2022-01-25 | Cf Traverse Llc | Energy storage devices |
-
2000
- 2000-01-25 JP JP2000015295A patent/JP2001210315A/en active Pending
Cited By (107)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7309548B2 (en) | 2001-04-19 | 2007-12-18 | Sanyo Electric Co., Ltd | Lithium secondary battery |
| US6800400B2 (en) | 2001-04-19 | 2004-10-05 | Sanyo Electric Co., Ltd. | Lithium secondary battery |
| US7407725B2 (en) | 2001-10-25 | 2008-08-05 | Sanyo Electric Co., Ltd. | Non-aqueous electrolyte secondary cell |
| JP2004022433A (en) * | 2002-06-19 | 2004-01-22 | Sanyo Electric Co Ltd | Negative electrode for lithium secondary battery, and lithium secondary battery |
| JP2010135332A (en) * | 2002-11-05 | 2010-06-17 | Nexeon Ltd | Structured silicon anode |
| US7811709B2 (en) | 2002-11-29 | 2010-10-12 | Mitsui Mining & Smelting Co., Ltd. | Negative electrode for nonaqueous secondary battery, process of producing the negative electrode, and nonaqueous secondary battery |
| WO2004051768A1 (en) * | 2002-11-29 | 2004-06-17 | Mitsui Mining & Smelting Co., Ltd. | Negative electrode for non-aqueous electrolyte secondary cell and method for manufacture thereof, and non-aqueous electrolyte secondary cell |
| US7816032B2 (en) | 2003-11-28 | 2010-10-19 | Panasonic Corporation | Energy device and method for producing the same |
| KR100659822B1 (en) | 2004-11-11 | 2006-12-19 | 마쯔시다덴기산교 가부시키가이샤 | Negative electrode for lithium ion secondary battery, production method thereof and lithium ion secondary battery comprising the same |
| JP2007188872A (en) * | 2005-12-13 | 2007-07-26 | Mitsubishi Chemicals Corp | Negative electrode material for nonaqueous electrolyte secondary battery, negative electrode for nonaqueous electrolyte secondary battery, and nonaqueous electrolyte secondary battery |
| JP2008081820A (en) * | 2006-09-28 | 2008-04-10 | Sumitomo Electric Ind Ltd | Film deposition system |
| US11152612B2 (en) | 2008-02-25 | 2021-10-19 | Cf Traverse Llc | Energy storage devices |
| US10978702B2 (en) | 2008-02-25 | 2021-04-13 | Cf Traverse Llc | Energy storage devices |
| US11075378B2 (en) | 2008-02-25 | 2021-07-27 | Cf Traverse Llc | Energy storage devices including stabilized silicon |
| US11127948B2 (en) | 2008-02-25 | 2021-09-21 | Cf Traverse Llc | Energy storage devices |
| US10964938B2 (en) | 2008-02-25 | 2021-03-30 | Cf Traverse Llc | Lithium-ion battery anode including preloaded lithium |
| US11233234B2 (en) | 2008-02-25 | 2022-01-25 | Cf Traverse Llc | Energy storage devices |
| US9705136B2 (en) | 2008-02-25 | 2017-07-11 | Traverse Technologies Corp. | High capacity energy storage |
| US11502292B2 (en) | 2008-02-25 | 2022-11-15 | Cf Traverse Llc | Lithium-ion battery anode including preloaded lithium |
| US10193142B2 (en) | 2008-02-25 | 2019-01-29 | Cf Traverse Llc | Lithium-ion battery anode including preloaded lithium |
| JP2015128075A (en) * | 2009-02-16 | 2015-07-09 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | Anode containing 14-group metal nanotube, lithium battery employing anode, and manufacturing method of anode |
| US9923209B2 (en) | 2009-02-16 | 2018-03-20 | Samsung Electronics Co., Ltd. | Negative electrode including group 14 metal/metalloid nanotubes, lithium battery including the negative electrode, and method of manufacturing the negative electrode |
| US8940438B2 (en) | 2009-02-16 | 2015-01-27 | Samsung Electronics Co., Ltd. | Negative electrode including group 14 metal/metalloid nanotubes, lithium battery including the negative electrode, and method of manufacturing the negative electrode |
| JP2010192444A (en) * | 2009-02-16 | 2010-09-02 | Samsung Electronics Co Ltd | Anode containing 14-group metal nanotube, lithium battery in which same is adopted, and its manufacturing method |
| US10461324B2 (en) | 2009-02-25 | 2019-10-29 | Cf Traverse Llc | Energy storage devices |
| US10714267B2 (en) | 2009-02-25 | 2020-07-14 | Cf Traverse Llc | Energy storage devices including support filaments |
| US10056602B2 (en) | 2009-02-25 | 2018-08-21 | Cf Traverse Llc | Hybrid energy storage device production |
| US9979017B2 (en) | 2009-02-25 | 2018-05-22 | Cf Traverse Llc | Energy storage devices |
| US9966197B2 (en) | 2009-02-25 | 2018-05-08 | Cf Traverse Llc | Energy storage devices including support filaments |
| US10665858B2 (en) | 2009-02-25 | 2020-05-26 | Cf Traverse Llc | Energy storage devices |
| US9431181B2 (en) | 2009-02-25 | 2016-08-30 | Catalyst Power Technologies | Energy storage devices including silicon and graphite |
| US9412998B2 (en) | 2009-02-25 | 2016-08-09 | Ronald A. Rojeski | Energy storage devices |
| US10673250B2 (en) | 2009-02-25 | 2020-06-02 | Cf Traverse Llc | Hybrid energy storage device charging |
| US10622622B2 (en) | 2009-02-25 | 2020-04-14 | Cf Traverse Llc | Hybrid energy storage devices including surface effect dominant sites |
| US10727481B2 (en) | 2009-02-25 | 2020-07-28 | Cf Traverse Llc | Energy storage devices |
| US9917300B2 (en) | 2009-02-25 | 2018-03-13 | Cf Traverse Llc | Hybrid energy storage devices including surface effect dominant sites |
| US9941709B2 (en) | 2009-02-25 | 2018-04-10 | Cf Traverse Llc | Hybrid energy storage device charging |
| US10727482B2 (en) | 2009-02-25 | 2020-07-28 | Cf Traverse Llc | Energy storage devices |
| US9349544B2 (en) | 2009-02-25 | 2016-05-24 | Ronald A Rojeski | Hybrid energy storage devices including support filaments |
| US10741825B2 (en) | 2009-02-25 | 2020-08-11 | Cf Traverse Llc | Hybrid energy storage device production |
| JP2010282957A (en) * | 2009-05-08 | 2010-12-16 | Furukawa Electric Co Ltd:The | Negative electrode for secondary battery, copper foil for electrode, secondary battery, and process for producing the negative electrode for secondary battery |
| WO2010128681A1 (en) * | 2009-05-08 | 2010-11-11 | 古河電気工業株式会社 | Negative electrodes for secondary battery, copper foil for electrode, secondary battery, and processes for producing negative electrodes for secondary battery |
| JP2011108639A (en) * | 2009-10-22 | 2011-06-02 | Ronald Anthony Rojeski | Electrode including collar stop |
| JP2015018821A (en) * | 2010-03-26 | 2015-01-29 | 株式会社半導体エネルギー研究所 | Secondary battery |
| CN102812581A (en) * | 2010-03-26 | 2012-12-05 | 株式会社半导体能源研究所 | Secondary battery and method for forming electrode of secondary battery |
| JP2015035427A (en) * | 2010-03-26 | 2015-02-19 | 株式会社半導体エネルギー研究所 | Secondary battery |
| US9735419B2 (en) | 2010-03-26 | 2017-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Secondary battery and method for forming electrode of secondary battery |
| US9685275B2 (en) | 2010-04-28 | 2017-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| US10236502B2 (en) | 2010-04-28 | 2019-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| US8852294B2 (en) | 2010-05-28 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| US8896098B2 (en) | 2010-05-28 | 2014-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| US9136530B2 (en) | 2010-05-28 | 2015-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Energy storage device and manufacturing method thereof |
| DE112011101878T5 (en) | 2010-06-01 | 2013-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Energy storage device and manufacturing method thereof |
| KR20130082101A (en) | 2010-06-01 | 2013-07-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Energy storage device and manufacturing method thereof |
| US9685277B2 (en) | 2010-06-02 | 2017-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Electrode |
| US9281134B2 (en) | 2010-06-02 | 2016-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| US8835048B2 (en) | 2010-06-11 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
| US8845764B2 (en) | 2010-06-14 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device comprising solid electrolyte layer over active material and second electrolyte and method of manufacturing the same |
| US9397245B2 (en) | 2010-06-18 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| US8871555B2 (en) | 2010-06-18 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| US9076909B2 (en) | 2010-06-18 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
| US9112224B2 (en) | 2010-06-30 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Energy storage device and method for manufacturing the same |
| US8846530B2 (en) | 2010-06-30 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming semiconductor region and method for manufacturing power storage device |
| US10283765B2 (en) | 2010-06-30 | 2019-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Energy storage device and method for manufacturing the same |
| JP2012033472A (en) * | 2010-06-30 | 2012-02-16 | Semiconductor Energy Lab Co Ltd | Method of producing power storage device |
| US9960225B2 (en) | 2010-06-30 | 2018-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of power storage device |
| US8669009B2 (en) | 2010-07-01 | 2014-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Positive electrode active material of power storage device, positive electrode of power storage device, power storage device, manufacturing method of positive electrode active material of power storage device |
| US8551655B2 (en) | 2010-07-07 | 2013-10-08 | Samsung Sdi Co., Ltd. | Negative active material for secondary lithium battery and secondary lithium battery |
| JP2012018911A (en) * | 2010-07-07 | 2012-01-26 | Samsung Sdi Co Ltd | Negative active material for lithium secondary battery and lithium secondary battery including the same |
| US8658246B2 (en) | 2010-10-15 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of group of whiskers |
| US8643182B2 (en) | 2010-11-26 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, method for manufacturing the same, and power storage device |
| US8455044B2 (en) | 2010-11-26 | 2013-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, method for manufacturing the same, and power storage device |
| US10128498B2 (en) | 2010-12-07 | 2018-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
| KR20130124337A (en) | 2010-12-07 | 2013-11-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Power storage device |
| US9362556B2 (en) | 2010-12-07 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
| US9543577B2 (en) | 2010-12-16 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Active material, electrode including the active material and manufacturing method thereof, and secondary battery |
| US8821601B2 (en) | 2011-01-21 | 2014-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Hydrogen generating element, hydrogen generation device, power generation device, and driving device |
| US9620769B2 (en) | 2011-06-24 | 2017-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device, electrode thereof, and method for manufacturing power storage device |
| US10072331B2 (en) | 2011-07-08 | 2018-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming silicon film and method for manufacturing power storage device |
| US8814956B2 (en) | 2011-07-14 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device, electrode, and manufacturing method thereof |
| US9815691B2 (en) | 2011-08-19 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode |
| US8685569B2 (en) | 2011-08-19 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Electrode for power storage device and power storage device |
| US11248307B2 (en) | 2011-08-19 | 2022-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode |
| US10050273B2 (en) | 2011-08-19 | 2018-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Electrode for power storage device and power storage device |
| US10544041B2 (en) | 2011-08-19 | 2020-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode |
| US11898261B2 (en) | 2011-08-19 | 2024-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode |
| US9083030B2 (en) | 2011-08-25 | 2015-07-14 | Samsung Sdi Co., Ltd. | Battery module |
| TWI568065B (en) * | 2011-08-30 | 2017-01-21 | 半導體能源研究所股份有限公司 | Power storage device and method for manufacturing electrode |
| US9337475B2 (en) | 2011-08-30 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
| US10658661B2 (en) | 2011-08-30 | 2020-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing electrode |
| US9129754B2 (en) | 2011-09-02 | 2015-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Electrode for power storage device and power storage device |
| US9799461B2 (en) | 2011-09-02 | 2017-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing electrode |
| US9401247B2 (en) | 2011-09-21 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device and power storage device |
| US9362549B2 (en) | 2011-12-21 | 2016-06-07 | Cpt Ip Holdings, Llc | Lithium-ion battery anode including core-shell heterostructure of silicon coated vertically aligned carbon nanofibers |
| US9929407B2 (en) | 2011-12-21 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for non-aqueous secondary battery, non-aqueous secondary battery, and manufacturing methods thereof |
| US9685653B2 (en) | 2012-04-06 | 2017-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device, method for forming the same, and power storage device |
| US9384904B2 (en) | 2012-04-06 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device, method for forming the same, and power storage device |
| US11605804B2 (en) | 2012-04-06 | 2023-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device, method for forming the same, and power storage device |
| US9899660B2 (en) | 2012-04-06 | 2018-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device, method for forming the same, and power storage device |
| US11056678B2 (en) | 2012-04-06 | 2021-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device, method for forming the same, and power storage device |
| US10263243B2 (en) | 2012-04-06 | 2019-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device, method for forming the same, and power storage device |
| US10541409B2 (en) | 2012-06-01 | 2020-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device and power storage device |
| US9698412B2 (en) | 2012-06-01 | 2017-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device and power storage device |
| US9183995B2 (en) | 2012-06-01 | 2015-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device and power storage device |
| US9490080B2 (en) | 2012-06-01 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device and power storage device |
| US9911971B2 (en) | 2012-06-01 | 2018-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device and power storage device |
| US10388467B2 (en) | 2012-11-07 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Electrode for power storage device, power storage device, and manufacturing method of electrode for power storage device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2001210315A (en) | Electrode for lithium secondary battery and lithium secondary battery using it | |
| CN101017915B (en) | Nonaqueous electrolyte secondary battery | |
| EP1936731B1 (en) | Rechargeable lithium battery | |
| US20080063941A1 (en) | Positive electrode material for nonaqueous electrolyte secondary battery and nonaqueous electrolyte secondary battery | |
| JP2001283834A (en) | Secondary battery | |
| WO2005057713A1 (en) | Secondary battery | |
| JP2008091236A (en) | Nonaqueous electrolyte secondary battery | |
| US6764791B2 (en) | Rechargeable lithium battery | |
| JP2001283833A (en) | Secondary battery | |
| US8263261B2 (en) | Active material for non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery comprising it | |
| JP2005235397A (en) | Electrode for lithium battery, lithium battery using it, and lithium secondary battery | |
| JP4297704B2 (en) | Nonaqueous electrolyte secondary battery | |
| JP2000021442A (en) | Nonaqueous electrolyte secondary battery | |
| JP2004185931A (en) | Nonaqueous electrolyte secondary battery | |
| JP2002289177A (en) | Lithium secondary battery and electrode for it | |
| JP4693371B2 (en) | Nonaqueous electrolyte secondary battery | |
| JP2001202992A (en) | Electrolytic solution for lithium secondary battery | |
| JP2001222995A (en) | Lithium ion secondary battery | |
| JP5779452B2 (en) | Negative electrode active material for non-aqueous electrolyte secondary battery and non-aqueous electrolyte secondary battery | |
| JP4104476B2 (en) | Method of using lithium secondary battery and lithium secondary battery | |
| EP3890090B1 (en) | Electrolyte for lithium secondary battery and lithium secondary battery including the same | |
| JP4535722B2 (en) | Nonaqueous electrolyte secondary battery | |
| JP4212439B2 (en) | How to use lithium secondary battery | |
| US20120301788A1 (en) | Electrode active material, method of preparing the same, electrode for lithium secondary battery which includes the same, and lithium secondary battery using the electrode | |
| JP2008084766A (en) | Non-aqueous electrolyte secondary battery |