JP2001176923A - Method for controlling film thickness of conductive adhesive layer - Google Patents
Method for controlling film thickness of conductive adhesive layerInfo
- Publication number
- JP2001176923A JP2001176923A JP35543399A JP35543399A JP2001176923A JP 2001176923 A JP2001176923 A JP 2001176923A JP 35543399 A JP35543399 A JP 35543399A JP 35543399 A JP35543399 A JP 35543399A JP 2001176923 A JP2001176923 A JP 2001176923A
- Authority
- JP
- Japan
- Prior art keywords
- conductive adhesive
- adhesive layer
- film thickness
- thickness
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体チップの電極
にフェースダウンで導電性接着剤を形成する半導体装置
の製造工程において、その導電性接着剤層の膜厚を精度
よく制御できる導電性接着剤層の膜厚制御方法に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductive adhesive capable of accurately controlling the thickness of a conductive adhesive layer in a semiconductor device manufacturing process in which a conductive adhesive is formed face down on electrodes of a semiconductor chip. The present invention relates to a method for controlling the thickness of a layer.
【０００２】[0002]
【従来の技術】近年、半導体チップの電極に突起電極を
形成し、その突起電極にフェースダウンで導電性接着剤
を形成し、その半導体チップを基板等に実装する半導体
装置の製造工程では、実装信頼性を高めるために突起電
極に形成する導電性接着剤の膜厚の管理が重要になって
きている。2. Description of the Related Art In recent years, in a semiconductor device manufacturing process in which a protruding electrode is formed on an electrode of a semiconductor chip, a conductive adhesive is formed face-down on the protruding electrode, and the semiconductor chip is mounted on a substrate or the like. It has become important to control the thickness of the conductive adhesive formed on the protruding electrodes in order to enhance reliability.
【０００３】従来の導電性接着剤層の制御方法について
図面を参照しながら説明する。図５は従来の導電性接着
剤層の膜厚制御方法を示す平面図である。また、図６は
従来の導電性接着剤層の膜厚制御方法を示す断面図であ
り、図５のＢ−Ｂ’線部分の断面図を示している。図７
は従来の導電性接着剤層の膜厚制御方法による膜厚測定
結果の一例である。A conventional method for controlling a conductive adhesive layer will be described with reference to the drawings. FIG. 5 is a plan view showing a conventional method for controlling the thickness of a conductive adhesive layer. FIG. 6 is a cross-sectional view illustrating a conventional method for controlling the thickness of the conductive adhesive layer, and is a cross-sectional view taken along the line BB ′ of FIG. FIG.
7 shows an example of the result of measuring the film thickness by a conventional method for controlling the film thickness of the conductive adhesive layer.
【０００４】まず転写皿１上に形成され、ブレード２で
撹拌されている導電性接着剤層３に対して、転写皿１を
固定し、レーザー膜厚測定器４を図５の転写エリア５に
かかる膜厚測定ライン６上に沿って移動させながら導電
性接着剤層３の膜厚を測定する。導電性接着剤の膜厚を
測定するレーザー膜厚測定器については、光源となる半
導体レーザーから出たレーザー光に対して対物レンズを
動かすことによって、測定対象物との焦点を合わす。原
点となる転写皿１そのものの上で焦点の合っている対物
レンズの位置から、導電性接着剤層３上で焦点が合う位
置に対物レンズが動いた距離を膜厚として測定する。First, the transfer plate 1 is fixed to the conductive adhesive layer 3 formed on the transfer plate 1 and stirred by the blade 2, and the laser film thickness measuring device 4 is moved to the transfer area 5 in FIG. The film thickness of the conductive adhesive layer 3 is measured while moving along the film thickness measurement line 6. With respect to a laser film thickness measuring device for measuring the film thickness of a conductive adhesive, an object lens is focused on by moving an objective lens with respect to laser light emitted from a semiconductor laser as a light source. The distance that the objective lens moves from the position of the objective lens on the transfer plate 1 itself, which is the origin, to the position on the conductive adhesive layer 3 that is in focus is measured as the film thickness.
【０００５】その測定された図７の測定結果の値７を数
箇所サンプリングし、そのサンプリングされた値の平均
値を測定した膜厚として出力する。[0005] The measured value 7 of FIG. 7 is sampled at several points, and the average value of the sampled values is output as the measured film thickness.
【０００６】そして必要とする導電性接着剤層３の膜厚
と、この測定値として出力された導電性接着剤層３の膜
厚値とを比較する。もし、これらの値に差が生じた場
合、この差を無くす為に、ブレード底面８の高さ位置を
制御している図６の圧電素子９に印加する電圧を加減
し、圧電素子９のひずみ量を調整し、必要とする導電性
接着剤層３の膜厚になるよう制御を行う。必要とする導
電性接着剤層３の膜厚が得られたら、その時に圧電素子
９に印加している電圧を保持し、導電性接着剤層３の膜
厚を維持する。Then, the required thickness of the conductive adhesive layer 3 is compared with the thickness of the conductive adhesive layer 3 output as the measured value. If there is a difference between these values, in order to eliminate the difference, the voltage applied to the piezoelectric element 9 of FIG. The amount is adjusted, and control is performed so that the required thickness of the conductive adhesive layer 3 is obtained. When the required thickness of the conductive adhesive layer 3 is obtained, the voltage applied to the piezoelectric element 9 at that time is maintained, and the thickness of the conductive adhesive layer 3 is maintained.
【０００７】以上、従来は転写皿１上の導電性接着剤層
３の転写エリアに対して、レーザー膜厚測定器４を特定
ラインで移動させて導電性接着剤層３の膜厚を測定する
というスキャン方式であり、測定領域の膜厚差の調整
は、圧電素子によるブレード底面８の高さ調整であっ
た。As described above, conventionally, the thickness of the conductive adhesive layer 3 is measured by moving the laser film thickness measuring device 4 along a specific line with respect to the transfer area of the conductive adhesive layer 3 on the transfer plate 1. The adjustment of the film thickness difference in the measurement area was adjustment of the height of the blade bottom surface 8 by the piezoelectric element.
【０００８】[0008]
【発明が解決しようとする課題】しかしながら前記従来
の方法では、転写エリアにおける導電性接着剤層の膜厚
を測定するレーザー膜厚測定器が膜厚測定ラインをスキ
ャンしながら測定するものであり、そのレーザー膜厚測
定器が移動する際の機械的振動により、測定器自体が高
さ方向に変動する。原点出しを行った測定器の高さ位置
に対して、測定移動時に測定器の高さ変動が起きると、
焦点距離が変わってしまい、正確な導電性接着剤の膜厚
を測定できず、この変動量を含んだ導電性接着剤層の膜
厚を出力する。そしてその誤差のある測定値を数箇所サ
ンプリングし、導電性接着剤層の膜厚と認識してしまう
ため、本来の導電性接着剤層の膜厚と違った値を測定結
果として出力してしまう。したがって、この違った値を
元にして導電性接着剤層の膜厚を制御するので、必要と
する導電性接着剤層の膜厚を得ることができなくなって
しまい、結果として半導体チップ上の突起電極に形成す
る導電性接着剤の量に差が生じ、基板実装時の信頼性に
影響を及ぼすという課題となる。However, in the above-mentioned conventional method, a laser film thickness measuring device for measuring the film thickness of a conductive adhesive layer in a transfer area measures while scanning a film thickness measuring line. Due to mechanical vibrations when the laser film thickness measuring device moves, the measuring device itself fluctuates in the height direction. If the height of the measuring device fluctuates during the measurement movement with respect to the height position of the measuring device that
Since the focal length changes, the thickness of the conductive adhesive layer cannot be accurately measured, and the thickness of the conductive adhesive layer including this variation is output. Then, the measurement value having the error is sampled at several places and recognized as the thickness of the conductive adhesive layer, so that a value different from the original thickness of the conductive adhesive layer is output as the measurement result. . Therefore, since the thickness of the conductive adhesive layer is controlled based on the different value, the required thickness of the conductive adhesive layer cannot be obtained. A difference occurs in the amount of the conductive adhesive to be formed on the electrode, and this has a problem that the reliability at the time of mounting on the substrate is affected.
【０００９】また、導電性接着剤の経時変化による粘度
上昇により、導電性接着剤層の膜厚を保持しているブレ
ード底面に圧力が加わる。その圧力がブレードを介して
圧電素子に伝わり、圧電素子のひずみ量が変化する。そ
の結果、導電性接着剤層の膜厚を保持しているブレード
底面の高さが変わり、導電性接着剤の粘度変化にともな
い、膜厚が変化してしまうという課題もある。[0009] In addition, pressure is applied to the bottom surface of the blade that maintains the thickness of the conductive adhesive layer due to the increase in viscosity of the conductive adhesive over time. The pressure is transmitted to the piezoelectric element via the blade, and the strain of the piezoelectric element changes. As a result, there is a problem that the height of the bottom surface of the blade holding the thickness of the conductive adhesive layer changes, and the film thickness changes with the change in viscosity of the conductive adhesive.
【００１０】本発明は前記従来の課題を解決するもので
あり、精度の高い膜厚の測定とともに、その膜厚の維
持、制御を行い、半導体チップ上の突起電極に対して信
頼性の高い導電性接着剤層を形成できる導電性接着剤層
の膜厚制御方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention solves the above-mentioned conventional problems. In addition to highly accurate film thickness measurement, the film thickness is maintained and controlled, and a highly reliable conductive film is provided to the bump electrode on the semiconductor chip. An object of the present invention is to provide a method for controlling the thickness of a conductive adhesive layer capable of forming a conductive adhesive layer.
【００１１】[0011]
【課題を解決するための手段】前記従来の課題を解決す
るために本発明の導電性接着剤層の膜厚制御方法は、以
下のような構成を有している。In order to solve the above-mentioned conventional problems, a method for controlling the thickness of a conductive adhesive layer according to the present invention has the following configuration.
【００１２】すなわち、転写皿上に形成された導電性接
着剤層の転写エリアに対して、少なくとも第１の箇所で
固定静止されたレーザー膜厚測定器により前記導電性接
着剤層の膜厚を測定する第１の測定工程と、前記第１の
箇所から前記レーザー膜厚測定器を移動させ、前記転写
エリア内の第２の箇所で固定静止させて前記レーザー膜
厚測定器により前記導電性接着剤層の膜厚を測定する第
２の測定工程と、前記第１の箇所と前記第２の箇所で測
定した導電性接着剤層の膜厚と所望とする導電性接着剤
層の膜厚とに差異があった場合、前記転写皿下部に設け
た高さ調整手段を調節して、前記転写エリアにて前記ブ
レード底面と前記転写皿表面との間の高さをそろえる調
整工程とよりなる導電性接着剤層の膜厚制御方法であ
る。That is, the thickness of the conductive adhesive layer is transferred to the transfer area of the conductive adhesive layer formed on the transfer plate by a laser film thickness measuring instrument fixed and stationary at least at the first point. A first measuring step of measuring, and moving the laser film thickness measuring device from the first location, fixing and stopping the laser film thickness measuring device at a second location in the transfer area, and applying the conductive adhesive by the laser film thickness measuring device. A second measuring step of measuring the thickness of the adhesive layer, and the thickness of the conductive adhesive layer and the desired thickness of the conductive adhesive layer measured at the first location and the second location. In the case where there is a difference, the height adjustment means provided below the transfer plate is adjusted to adjust the height between the blade bottom surface and the transfer plate surface in the transfer area. This is a method for controlling the thickness of the conductive adhesive layer.
【００１３】そして具体的には、第１の箇所と第２の箇
所で測定した導電性接着剤層の膜厚と所望とする導電性
接着剤層の膜厚とに差異があった場合、転写皿下部に設
けた高さ調整手段を調節して、転写エリアにてブレード
底面と前記転写皿表面との間の高さをそろえる調整工程
は、前記導電性接着剤層の前記転写エリアの前記第１の
箇所と前記第２の箇所にて各々、前記ブレード底面と前
記転写皿表面との間の高さをそろえる調整工程である導
電性接着剤層の膜厚制御方法である。Specifically, when there is a difference between the thickness of the conductive adhesive layer measured at the first location and the second location and the desired thickness of the conductive adhesive layer, the transfer is performed. The adjusting step of adjusting the height adjusting means provided at the lower part of the plate to adjust the height between the blade bottom surface and the surface of the transfer plate in the transfer area is performed in the transfer area of the conductive adhesive layer. This is a method for controlling the thickness of the conductive adhesive layer, which is an adjustment step of adjusting the height between the blade bottom surface and the transfer dish surface at each of the first location and the second location.
【００１４】さらに具体的には、本発明の導電性接着剤
層の膜厚制御方法は、半導体チップの電極に突起電極を
形成し、前記突起電極に導電性接着剤を形成し、前記導
電性接着剤を介して半導体チップを基板等に実装する半
導体装置の製造工程での導電性接着剤の膜厚制御方法で
あって、転写皿上に形成され、ブレードで撹拌された導
電性接着剤層の転写エリアに対して、レーザー膜厚測定
器を前記転写エリアの第１の箇所上に移動させ静止させ
て固定し、前記第１の箇所の導電性接着剤層の導電性接
着剤を一旦除去し、原点となる前記転写皿の表面を出
し、レーザー膜厚測定器の原点出しの測定を行う工程
と、前記転写皿を１回転させてブレードにより導電性接
着剤層を撹拌した後、前記転写皿上の導電性接着剤層の
転写エリアに対して、前記第１の箇所で固定静止された
レーザー膜厚測定器により膜厚を測定する第１の測定工
程と、前記第１の箇所で測定した導電性接着剤層の膜厚
と所望とする導電性接着剤層の膜厚とに差異があった場
合、前記転写皿下部に設けたマイクロメーターを調節し
て、前記第１の箇所にて前記ブレード底面と前記転写皿
表面との間の高さをそろえる第１の調整工程と、前記レ
ーザー膜厚測定器を前記転写エリアの第２の箇所上に移
動させ静止させて固定し、前記第２の箇所の導電性接着
剤層の導電性接着剤を一旦除去し、原点となる前記転写
皿の表面を出し、レーザー膜厚測定器の原点出しの測定
を行う工程と、前記転写皿を１回転させてブレードによ
り導電性接着剤層を撹拌した後、前記転写皿上の導電性
接着剤層の転写エリアに対して、前記第２の箇所で固定
静止されたレーザー膜厚測定器により膜厚を測定する第
２の測定工程と、前記第２の箇所で測定した導電性接着
剤層の膜厚と所望とする導電性接着剤層の膜厚とに差異
があった場合、前記転写皿下部に設けたマイクロメータ
ーを調節して、前記第２の箇所にて前記ブレード底面と
前記転写皿表面との間の高さをそろえる第２の調整工程
とよりなる導電性接着剤層の膜厚制御方法である。More specifically, the method for controlling the thickness of a conductive adhesive layer according to the present invention comprises the steps of: forming a protruding electrode on an electrode of a semiconductor chip; forming a conductive adhesive on the protruding electrode; A method for controlling the thickness of a conductive adhesive in a manufacturing process of a semiconductor device in which a semiconductor chip is mounted on a substrate or the like via an adhesive, the conductive adhesive layer being formed on a transfer plate and stirred by a blade With respect to the transfer area, the laser film thickness measuring device is moved over the first location of the transfer area, and is stopped and fixed, and the conductive adhesive of the conductive adhesive layer at the first location is once removed. Then, the surface of the transfer dish serving as the origin is exposed, and the measurement of the origin is measured by a laser film thickness measuring device. The conductive adhesive layer is stirred by a blade by rotating the transfer dish once, and then the transfer is performed. For the transfer area of the conductive adhesive layer on the plate, A first measuring step of measuring a film thickness by a laser film thickness measuring instrument fixed and stationary at the first location, and a film thickness of the conductive adhesive layer measured at the first location and a desired conductivity. When there is a difference between the thickness of the adhesive layer and the thickness of the adhesive layer, the height between the bottom surface of the blade and the surface of the transfer plate at the first location is adjusted by adjusting a micrometer provided at the lower portion of the transfer plate. Aligning a first adjusting step, moving the laser film thickness measuring device over a second location of the transfer area, stopping and fixing, and removing the conductive adhesive of the conductive adhesive layer of the second location. Once removed, the surface of the transfer dish serving as the origin is taken out, and the step of measuring the origin of the laser film thickness measuring device is performed.After the transfer dish is rotated once, the conductive adhesive layer is stirred by a blade, For the transfer area of the conductive adhesive layer on the transfer dish, A second measuring step of measuring the film thickness by a laser film thickness measuring instrument fixed and stationary at the point of, and the film thickness of the conductive adhesive layer measured at the second point and the desired conductive adhesive layer If there is a difference in the film thickness of the transfer plate, a micrometer provided at the lower portion of the transfer plate is adjusted to adjust the height between the bottom surface of the blade and the surface of the transfer plate at the second location. This is a method for controlling the thickness of the conductive adhesive layer, which comprises the adjusting step.
【００１５】前記構成の通り、固定静止されたレーザー
で膜厚測定するので、レーザーの移動等による振動がな
いために測定誤差を低減できる。また測定した個所と同
一箇所である第１の箇所と第２の箇所の各々で高さをマ
イクロメーターで調整するので、転写エリアの導電性接
着剤の膜厚を精度よく制御できる。その結果、高精度で
膜厚制御できるため、半導体チップの突起電極に転写に
よって均一な量の導電性接着剤を形成できる。As described above, since the film thickness is measured with the laser fixed and stationary, the measurement error can be reduced because there is no vibration due to the movement of the laser. In addition, since the height is adjusted by the micrometer at each of the first portion and the second portion, which are the same portions as the measured portions, the thickness of the conductive adhesive in the transfer area can be accurately controlled. As a result, since the film thickness can be controlled with high accuracy, a uniform amount of the conductive adhesive can be formed on the protruding electrodes of the semiconductor chip by transfer.
【００１６】[0016]
【発明の実施の形態】本発明の導電性接着剤層の膜厚制
御方法は、転写皿上に形成された導電性接着剤層の転写
エリアに対して、少なくとも第１の箇所で固定静止され
たレーザー膜厚測定器により導電性接着剤層の膜厚を測
定する第１の測定工程と、その第１の箇所からレーザー
膜厚測定器を移動させ、転写エリア内の第２の箇所で固
定静止させてレーザー膜厚測定器により導電性接着剤層
の膜厚を測定する第２の測定工程と、第１の箇所と第２
の箇所で測定した導電性接着剤層の膜厚と、所望とする
導電性接着剤層の膜厚とに差異があった場合、転写皿下
部に設けた高さ調整手段を調節して、転写エリアにてブ
レード底面と転写皿表面との間の高さをそろえる調整工
程とよりなるものである。DESCRIPTION OF THE PREFERRED EMBODIMENTS According to the method for controlling the thickness of a conductive adhesive layer of the present invention, at least a first portion is fixed and stationary with respect to a transfer area of a conductive adhesive layer formed on a transfer plate. The first measuring step of measuring the thickness of the conductive adhesive layer with the laser film thickness measuring device, and the laser film thickness measuring device is moved from the first position and fixed at the second position in the transfer area A second measuring step of measuring the film thickness of the conductive adhesive layer by stopping the measurement with a laser film thickness measuring device;
If there is a difference between the thickness of the conductive adhesive layer measured at the point of the above and the desired thickness of the conductive adhesive layer, the height adjusting means provided at the lower portion of the transfer dish is adjusted, and the transfer is performed. And adjusting the height between the blade bottom surface and the transfer plate surface in the area.
【００１７】以下、本発明の導電性接着剤層の膜厚制御
方法における一実施形態について図面を参照しながら説
明する。An embodiment of the method for controlling the thickness of the conductive adhesive layer of the present invention will be described below with reference to the drawings.
【００１８】図１〜図４は本実施形態の導電性接着剤層
の膜厚制御方法を示す図である。図１は本実施形態の導
電性接着剤層の膜厚制御方法を示す平面図であり、図２
は導電性接着剤層の膜厚制御方法を示す断面図であり、
図１のＡ−Ａ’線部分の断面図を示している。図３，図
４は導電性接着剤層の測定膜厚を示す図である。FIGS. 1 to 4 are views showing a method for controlling the thickness of the conductive adhesive layer of the present embodiment. FIG. 1 is a plan view showing a method for controlling the thickness of the conductive adhesive layer of the present embodiment, and FIG.
Is a sectional view showing a method for controlling the thickness of the conductive adhesive layer,
FIG. 2 is a cross-sectional view taken along line AA ′ of FIG. 1. 3 and 4 are diagrams showing the measured thickness of the conductive adhesive layer.
【００１９】図示するように、まず転写皿１上にエポキ
シ樹脂をバインダーとする銀−パラジウム（Ａｇ−Ｐ
ｄ）ペーストである導電性接着剤を塗布し、ドクターブ
レード法を用いて転写皿１を回転させ、ブレード２で導
電性接着剤層３を撹拌する。As shown in the drawing, first, silver-palladium (Ag-P
d) A conductive adhesive as a paste is applied, the transfer dish 1 is rotated using a doctor blade method, and the conductive adhesive layer 3 is agitated by the blade 2.
【００２０】そして撹拌後、レーザー膜厚測定器４を転
写エリア５の第１の箇所１０上に移動させ静止させて固
定する。その第１の箇所１０の導電性接着剤層３の導電
性接着剤をへら等で掻き取り、一旦除去し、原点となる
転写皿１の表面を出す。そこで、第１の箇所１０でのレ
ーザー膜厚測定器４の原点出しの測定を行う。After the stirring, the laser film thickness measuring device 4 is moved onto the first location 10 of the transfer area 5 and is stopped and fixed. The conductive adhesive of the conductive adhesive layer 3 at the first location 10 is scraped off with a spatula or the like, temporarily removed, and the surface of the transfer plate 1 serving as the origin is exposed. Therefore, the origin measurement of the laser film thickness measuring device 4 at the first location 10 is measured.
【００２１】そして転写皿１を回転させることにより、
ブレード２で導電性接着剤を延ばして導電性接着剤層３
を再度、転写皿１上に形成し、第１の測定として、第１
の箇所１０にてその導電性接着剤層３の膜厚を測定す
る。ここで転写皿１の表面が出ている第１の箇所１０
は、転写皿が１回転した後、ブレード２のブレード底面
７と転写皿１表面との間の距離と同等の膜厚を形成す
る。By rotating the transfer plate 1,
The conductive adhesive is spread by the blade 2 to form the conductive adhesive layer 3.
Is again formed on the transfer dish 1, and as a first measurement, the first
The film thickness of the conductive adhesive layer 3 is measured at the point 10. Here, the first portion 10 where the surface of the transfer plate 1 is exposed
Forms a film thickness equal to the distance between the blade bottom surface 7 of the blade 2 and the surface of the transfer dish 1 after the transfer dish makes one rotation.
【００２２】この第１の箇所１０での膜厚の測定結果を
図３に示す。そして図３に示すように膜厚測定結果をモ
ニタリングすることによって、第１の箇所１０で形成し
た導電性接着剤層３の膜厚１１を確認できる。FIG. 3 shows the measurement results of the film thickness at the first portion 10. Then, as shown in FIG. 3, by monitoring the thickness measurement result, the thickness 11 of the conductive adhesive layer 3 formed at the first portion 10 can be confirmed.
【００２３】ここでこの１回転した後の第１の箇所１０
での導電性接着剤層３の膜厚１１が、必要とする導電性
接着剤層の膜厚に対して差異があった場合、第１の箇所
１０の膜厚を制御するブレード底面８を上下させる高さ
調整手段である第１のマイクロメーター１２を調整す
る。この第１のマイクロメーター１２による調整は、ブ
レード底面８と転写皿１表面との間の高さをそろえる調
整である。またこの時の調整量は、モニタリングしたと
きに具体的に測定値がでているので、必要とする導電性
接着剤層３の膜厚との差の分だけ調整すればよい。この
調整後、転写皿１を回転させることにより、ブレード２
が導電性接着剤層３を撹拌し、第１の箇所１０での所望
とする導電性接着剤層の膜厚を得ることができる。Here, the first portion 10 after one rotation
When the thickness 11 of the conductive adhesive layer 3 at the time is different from the required thickness of the conductive adhesive layer, the blade bottom 8 for controlling the thickness of the first portion 10 is moved up and down. The first micrometer 12, which is height adjusting means to be adjusted, is adjusted. The adjustment by the first micrometer 12 is an adjustment to make the height between the blade bottom surface 8 and the surface of the transfer dish 1 uniform. The amount of adjustment at this time is specifically measured at the time of monitoring, so it may be adjusted by the difference between the required thickness of the conductive adhesive layer 3 and the required amount. After this adjustment, the blade 2 is rotated by rotating the transfer plate 1.
Can stir the conductive adhesive layer 3 to obtain a desired thickness of the conductive adhesive layer at the first portion 10.
【００２４】次に、レーザー膜厚測定器４を転写エリア
５の第２の箇所１３上に移動させ、静止し、固定する。
そして前記した第１の箇所の測定と同様に、その第２の
箇所１３の導電性接着剤をへら等で掻き取り、原点とな
る転写皿１の表面を出す。そこで、第２の箇所１３での
レーザー膜厚測定器４の原点出しの測定を行う。Next, the laser film thickness measuring device 4 is moved onto the second portion 13 of the transfer area 5, and is stopped and fixed.
Then, similarly to the measurement at the first location, the conductive adhesive at the second location 13 is scraped off with a spatula or the like, and the surface of the transfer plate 1 serving as the origin is exposed. Therefore, the origin measurement of the laser film thickness measuring device 4 at the second location 13 is measured.
【００２５】そして転写皿１を回転させることにより、
ブレード２で導電性接着剤を延ばして導電性接着剤層３
を再度、転写皿１上に形成し、第２の測定として、第２
の箇所１３にてその導電性接着剤層３の膜厚を測定す
る。ここでも転写皿１表面が出ている第２の箇所１３
は、転写皿１が１回転した後、ブレード底面８と転写皿
１表面との間の距離と同等の膜厚を形成する。By rotating the transfer plate 1,
The conductive adhesive is spread by the blade 2 to form the conductive adhesive layer 3.
Is formed on the transfer dish 1 again, and as a second measurement, the second
The film thickness of the conductive adhesive layer 3 is measured at the location 13. Also here, the second portion 13 where the surface of the transfer plate 1 is exposed
Forms a film thickness equal to the distance between the blade bottom surface 8 and the surface of the transfer plate 1 after the transfer plate 1 makes one rotation.
【００２６】この第２の箇所１３での膜厚の測定結果を
図４に示す。そして図４に示すように膜厚測定結果をモ
ニタリングすることによって、第２の箇所１３での形成
した導電性接着剤層３の膜厚１４を確認できる。FIG. 4 shows the measurement results of the film thickness at the second portion 13. By monitoring the thickness measurement result as shown in FIG. 4, the thickness 14 of the conductive adhesive layer 3 formed at the second location 13 can be confirmed.
【００２７】ここでこの１回転した後の第２の箇所１３
での導電性接着剤層３の膜厚１４が、必要とする導電性
接着剤層の膜厚に対して差異があった場合、前記同様に
第２の箇所１３の膜厚を制御するブレード底面８を上下
させる第２のマイクロメーター１５を調整する。このと
きの調整量はモニタリングしたときに具体的に測定値が
出ているので、必要とする導電性接着剤層３の膜厚との
差の分だけ調整すればよい。この調整後、転写皿１を回
転させることにより、ブレード２が導電性接着剤層３を
撹拌し、第２の箇所１３での所望とする導電性接着剤層
の膜厚を得ることができる。Here, the second portion 13 after this one rotation
When the film thickness 14 of the conductive adhesive layer 3 at the time is different from the required film thickness of the conductive adhesive layer, the blade bottom for controlling the film thickness of the second portion 13 in the same manner as described above. The second micrometer 15 for raising and lowering 8 is adjusted. At this time, since the measured value is specifically measured when monitoring, the adjustment amount may be adjusted by the difference from the required thickness of the conductive adhesive layer 3. After this adjustment, by rotating the transfer dish 1, the blade 2 stirs the conductive adhesive layer 3, and a desired thickness of the conductive adhesive layer at the second location 13 can be obtained.
【００２８】以上のような導電性接着剤の膜厚制御を行
うことにより、測定器の移動による振動の影響を解消
し、転写エリア５の導電性接着剤層３の膜厚の測定誤差
を低減し、正確な膜厚測定を容易かつ高精度で行うこと
ができる。また、導電性接着剤の粘度上昇による圧力に
対して、ブレード底面８高さ位置の変動の起きない第１
のマイクロメーター１２と第２のマイクロメーター１４
によるブレード２の位置の固定をすることにより、必要
とする導電性接着剤層３の膜厚を長時間にわたり高精度
で維持することができる。By controlling the thickness of the conductive adhesive as described above, the influence of vibration due to the movement of the measuring device is eliminated, and the measurement error of the thickness of the conductive adhesive layer 3 in the transfer area 5 is reduced. In addition, accurate film thickness measurement can be easily and accurately performed. Further, the first position in which the height position of the blade bottom 8 does not fluctuate with respect to the pressure due to the increase in the viscosity of the conductive adhesive.
Micrometer 12 and second micrometer 14
By fixing the position of the blade 2 by the above, the required thickness of the conductive adhesive layer 3 can be maintained with high accuracy for a long time.
【００２９】本実施形態では、転写皿１上の導電性接着
剤層３の膜厚は１０〜２０［μｍ］であり、実質的には
１７［μｍ］を設定している。これは、半導体チップ上
に設ける二段形状を有する突起電極の高さは５０［μ
ｍ］であり、その突起電極の上段部の高さは２８［μ
ｍ］であり、導電性接着剤層３の厚みは、突起電極の先
端部すなわち上段部の６０［％］に相当する膜厚に設定
するためである。この条件で半導体チップの突起電極を
導電性接着剤層に対して押圧させることにより、突起電
極の先端部のみに導電性接着剤を高精度で形成すること
ができる。実際には突起電極の先端部から１０［μｍ］
程度突出した量の導電性接着剤が突起電極上に形成さ
れ、この突出量により、半導体チップを基板実装する
際、基板自体の反り量を吸収して接合することができ、
フェースダウン実装の信頼性を向上させることができ
る。In the present embodiment, the thickness of the conductive adhesive layer 3 on the transfer plate 1 is 10 to 20 [μm], and is substantially set to 17 [μm]. This is because the height of the two-stage projection electrode provided on the semiconductor chip is 50 μm.
m], and the height of the upper step of the protruding electrode is 28 [μ].
m], and the thickness of the conductive adhesive layer 3 is set to a thickness corresponding to 60 [%] at the tip of the protruding electrode, that is, the upper part. By pressing the protruding electrode of the semiconductor chip against the conductive adhesive layer under these conditions, the conductive adhesive can be formed with high accuracy only on the tip end of the protruding electrode. Actually, 10 [μm] from the tip of the protruding electrode
A protruding amount of the conductive adhesive is formed on the protruding electrodes, and by this protruding amount, when mounting the semiconductor chip on the substrate, the amount of warpage of the substrate itself can be absorbed and joined,
The reliability of face-down mounting can be improved.
【００３０】以上の通り、本実施形態の導電性接着剤層
の膜厚制御方法では、高精度が要求される１０〜２０
［μｍ］程度の薄膜の導電性接着剤層の膜厚管理が可能
となり、要求される高精度の膜厚測定とその調整が実現
できるため、半導体チップの突起電極に転写によって均
一な量の導電性接着剤を形成できる。As described above, the method for controlling the thickness of the conductive adhesive layer of the present embodiment requires 10 to 20 for which high precision is required.
The thickness of the conductive adhesive layer having a thickness of about [μm] can be controlled, and the required high-precision film thickness measurement and adjustment can be realized. Can be formed.
【００３１】[0031]
【発明の効果】以上、実施形態で説明したように、本発
明の導電性接着剤層の膜厚制御方法は、固定静止された
状態のレーザー測定器により複数箇所で膜厚測定するの
で、レーザー測定器の移動等の振動がないために測定誤
差を低減でき、高精度が要求される薄膜での膜厚管理が
可能になり、突起電極への導電性接着剤の形成を信頼性
よく実現できる。また膜厚測定した第１の箇所と第２の
箇所とで導電性接着剤の膜厚をマイクロメーターで調
整、維持するので、転写エリアの導電性接着剤の膜厚制
御を容易かつ高精度で長時間行うことができ、半導体チ
ップの突起電極に転写によって均一な量の導電性接着剤
を容易かつ安定に供給することができる。As described above, in the method for controlling the thickness of the conductive adhesive layer according to the present invention, since the film thickness is measured at a plurality of positions by a laser measuring instrument in a fixed and stationary state, the laser Since there is no vibration such as movement of the measuring instrument, measurement errors can be reduced, film thickness can be controlled in thin films requiring high precision, and formation of conductive adhesive on protruding electrodes can be realized with high reliability. . In addition, since the thickness of the conductive adhesive is adjusted and maintained by the micrometer at the first location and the second location where the film thickness is measured, the thickness of the conductive adhesive in the transfer area can be easily and accurately controlled. This can be performed for a long time, and a uniform amount of the conductive adhesive can be easily and stably supplied to the protruding electrodes of the semiconductor chip by transfer.
【図１】本発明の一実施形態に係る導電性接着剤層の膜
厚制御方法を示す平面図FIG. 1 is a plan view showing a method for controlling the thickness of a conductive adhesive layer according to an embodiment of the present invention.
【図２】本発明の一実施形態に係る導電性接着剤層の膜
厚制御方法を示す断面図FIG. 2 is a sectional view showing a method for controlling the thickness of a conductive adhesive layer according to an embodiment of the present invention.
【図３】本発明の一実施形態に係る導電性接着剤層の膜
厚制御方法による膜厚測定結果を示す図FIG. 3 is a view showing a result of measuring a film thickness by a method for controlling a film thickness of a conductive adhesive layer according to an embodiment of the present invention;
【図４】本発明の一実施形態に係る導電性接着剤層の膜
厚制御方法による膜厚測定結果を示す図FIG. 4 is a view showing a result of measuring a film thickness by a method for controlling a film thickness of a conductive adhesive layer according to an embodiment of the present invention;
【図５】従来の導電性接着剤層の膜厚制御方法を示す平
面図FIG. 5 is a plan view showing a conventional method for controlling the thickness of a conductive adhesive layer.
【図６】従来の導電性接着剤層の膜厚制御方法を示す断
面図FIG. 6 is a sectional view showing a conventional method for controlling the thickness of a conductive adhesive layer.
【図７】従来の導電性接着剤層の膜厚制御方法による膜
厚測定結果を示す図FIG. 7 is a diagram showing a result of measuring a film thickness by a conventional method for controlling a film thickness of a conductive adhesive layer.
１ 転写皿 ２ ブレード ３ 導電性接着剤層 ４ レーザー膜厚測定器 ５ 転写エリア ６ 膜厚測定ライン ７ 従来の膜厚測定方法による測定結果の値 ８ ブレード底面 ９ 圧電素子 １０ 第１の箇所 １１ 第１の箇所での導電性接着剤層の膜厚 １２ 第１のマイクロメーター １３ 第２の箇所 １４ 第２の箇所での導電性接着剤層の膜厚 １５ 第２のマイクロメーター DESCRIPTION OF SYMBOLS 1 Transfer plate 2 Blade 3 Conductive adhesive layer 4 Laser film thickness measuring device 5 Transfer area 6 Film thickness measuring line 7 Measurement result value by the conventional film thickness measuring method 8 Blade bottom surface 9 Piezoelectric element 10 1st place 11th Thickness of conductive adhesive layer at one place 12 First micrometer 13 Second place 14 Thickness of conductive adhesive layer at second place 15 Second micrometer
Claims (3)
転写エリアに対して、少なくとも第１の箇所で固定静止
されたレーザー膜厚測定器により前記導電性接着剤層の
膜厚を測定する第１の測定工程と、前記第１の箇所から
前記レーザー膜厚測定器を移動させ、前記転写エリア内
の第２の箇所で固定静止させて前記レーザー膜厚測定器
により前記導電性接着剤層の膜厚を測定する第２の測定
工程と、前記第１の箇所と前記第２の箇所で測定した導
電性接着剤層の膜厚と所望とする導電性接着剤層の膜厚
とに差異があった場合、前記転写皿下部に設けた高さ調
整手段を調節して、前記転写エリアにて前記ブレード底
面と前記転写皿表面との間の高さをそろえる調整工程と
よりなることを特徴とする導電性接着剤層の膜厚制御方
法。1. A method for measuring the thickness of a conductive adhesive layer on a transfer area of a conductive adhesive layer formed on a transfer plate by a laser film thickness measuring instrument fixed and stationary at least at a first location. A first measuring step of measuring, and moving the laser film thickness measuring device from the first location, fixing and stopping the laser film thickness measuring device at a second location in the transfer area, and applying the conductive adhesive by the laser film thickness measuring device. A second measuring step of measuring the thickness of the adhesive layer, and the thickness of the conductive adhesive layer and the desired thickness of the conductive adhesive layer measured at the first location and the second location. In the case where there is a difference, the height adjusting means provided at the lower portion of the transfer plate is adjusted to adjust the height between the bottom surface of the blade and the surface of the transfer plate in the transfer area. A method for controlling the thickness of a conductive adhesive layer, which is characterized in that:
性接着剤層の膜厚と所望とする導電性接着剤層の膜厚と
に差異があった場合、転写皿下部に設けた高さ調整手段
を調節して、転写エリアにてブレード底面と前記転写皿
表面との間の高さをそろえる調整工程は、前記導電性接
着剤層の前記転写エリアの前記第１の箇所と前記第２の
箇所にて各々、前記ブレード底面と前記転写皿表面との
間の高さをそろえる調整工程であることを特徴とする請
求項１に記載の導電性接着剤層の膜厚制御方法。2. When there is a difference between the thickness of the conductive adhesive layer measured at the first location and the second location and the desired thickness of the conductive adhesive layer, the conductive adhesive layer is provided below the transfer plate. Adjusting the height adjustment means to adjust the height between the blade bottom surface and the transfer plate surface in the transfer area, the step of adjusting the height between the first portion of the transfer area of the conductive adhesive layer and 2. The method according to claim 1, further comprising an adjusting step of adjusting a height between the blade bottom surface and the transfer dish surface at each of the second locations. .
し、前記突起電極に導電性接着剤を形成し、前記導電性
接着剤を介して半導体チップを基板等に実装する半導体
装置の製造工程での導電性接着剤の膜厚制御方法であっ
て、転写皿上に形成され、ブレードで撹拌された導電性
接着剤層の転写エリアに対して、レーザー膜厚測定器を
前記転写エリアの第１の箇所上に移動させ静止させて固
定し、前記第１の箇所の導電性接着剤層の導電性接着剤
を一旦除去し、原点となる前記転写皿の表面を出し、レ
ーザー膜厚測定器の原点出しの測定を行う工程と、前記
転写皿を１回転させてブレードにより導電性接着剤層を
撹拌した後、前記転写皿上の導電性接着剤層の転写エリ
アに対して、前記第１の箇所で固定静止されたレーザー
膜厚測定器により膜厚を測定する第１の測定工程と、前
記第１の箇所で測定した導電性接着剤層の膜厚と所望と
する導電性接着剤層の膜厚とに差異があった場合、前記
転写皿下部に設けたマイクロメーターを調節して、前記
第１の箇所にて前記ブレード底面と前記転写皿表面との
間の高さをそろえる第１の調整工程と、前記レーザー膜
厚測定器を前記転写エリアの第２の箇所上に移動させ静
止させて固定し、前記第２の箇所の導電性接着剤層の導
電性接着剤を一旦除去し、原点となる前記転写皿の表面
を出し、レーザー膜厚測定器の原点出しの測定を行う工
程と、前記転写皿を１回転させてブレードにより導電性
接着剤層を撹拌した後、前記転写皿上の導電性接着剤層
の転写エリアに対して、前記第２の箇所で固定静止され
たレーザー膜厚測定器により膜厚を測定する第２の測定
工程と、前記第２の箇所で測定した導電性接着剤層の膜
厚と所望とする導電性接着剤層の膜厚とに差異があった
場合、前記転写皿下部に設けたマイクロメーターを調節
して、前記第２の箇所にて前記ブレード底面と前記転写
皿表面との間の高さをそろえる第２の調整工程とよりな
ることを特徴とする導電性接着剤層の膜厚制御方法。3. A semiconductor device manufacturing process in which a protruding electrode is formed on an electrode of a semiconductor chip, a conductive adhesive is formed on the protruding electrode, and the semiconductor chip is mounted on a substrate or the like via the conductive adhesive. A method for controlling the thickness of a conductive adhesive layer, wherein a laser film thickness measuring device is provided on a transfer dish of a conductive adhesive layer formed on a transfer plate and agitated by a blade. Is moved to a position, and is fixed by being stopped, the conductive adhesive of the conductive adhesive layer at the first position is once removed, and the surface of the transfer dish serving as the origin is taken out. Measuring the origin and rotating the transfer dish once to stir the conductive adhesive layer with a blade, and then transferring the first adhesive to the transfer area of the conductive adhesive layer on the transfer dish. Film thickness measured by laser film thickness measuring instrument A first measuring step of measuring the thickness of the conductive adhesive layer measured at the first location and a desired thickness of the conductive adhesive layer. A first adjusting step of adjusting a micrometer provided at the first position to adjust a height between the blade bottom surface and the transfer dish surface at the first location; and Is moved to a second place, and is stopped and fixed, the conductive adhesive of the conductive adhesive layer at the second place is once removed, and the surface of the transfer dish serving as an origin is taken out, and the laser film thickness is obtained. A step of measuring the origin of the measuring device and, after rotating the transfer dish once and stirring the conductive adhesive layer with a blade, with respect to the transfer area of the conductive adhesive layer on the transfer dish, Measures the film thickness with a laser film thickness measuring instrument fixed and stationary at the second point A second measuring step, and if there is a difference between the thickness of the conductive adhesive layer measured at the second location and the desired thickness of the conductive adhesive layer, the second adhesive is provided below the transfer dish. A second adjusting step of adjusting the height between the bottom surface of the blade and the surface of the transfer dish at the second location by adjusting the micrometer. Film thickness control method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35543399A JP3491586B2 (en) | 1999-12-15 | 1999-12-15 | Method of controlling thickness of conductive adhesive layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35543399A JP3491586B2 (en) | 1999-12-15 | 1999-12-15 | Method of controlling thickness of conductive adhesive layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001176923A true JP2001176923A (en) | 2001-06-29 |
| JP3491586B2 JP3491586B2 (en) | 2004-01-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35543399A Expired - Fee Related JP3491586B2 (en) | 1999-12-15 | 1999-12-15 | Method of controlling thickness of conductive adhesive layer |
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| JP (1) | JP3491586B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007008535A (en) * | 2005-06-30 | 2007-01-18 | Kirin Brewery Co Ltd | Adhesive application device, label attaching apparatus using the device and adhesive film thickness measuring method |
| JP2007294717A (en) * | 2006-04-26 | 2007-11-08 | Mitsubishi Electric Corp | Device and method for separating semiconductor wafer |
| CN102121934A (en) * | 2010-12-23 | 2011-07-13 | 上海应用技术学院 | Scanning mechanism for determining smearing effect |
| US10714271B2 (en) | 2011-07-08 | 2020-07-14 | Fastcap Systems Corporation | High temperature energy storage device |
| US11250995B2 (en) | 2011-07-08 | 2022-02-15 | Fastcap Systems Corporation | Advanced electrolyte systems and their use in energy storage devices |
| JP7030570B2 (en) | 2011-06-07 | 2022-03-07 | ファーストキャップ・システムズ・コーポレイション | Energy storage medium for ultracapacitors |
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1999
- 1999-12-15 JP JP35543399A patent/JP3491586B2/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007008535A (en) * | 2005-06-30 | 2007-01-18 | Kirin Brewery Co Ltd | Adhesive application device, label attaching apparatus using the device and adhesive film thickness measuring method |
| JP2007294717A (en) * | 2006-04-26 | 2007-11-08 | Mitsubishi Electric Corp | Device and method for separating semiconductor wafer |
| JP4668833B2 (en) * | 2006-04-26 | 2011-04-13 | 三菱電機株式会社 | Semiconductor wafer separation apparatus and separation method |
| CN102121934A (en) * | 2010-12-23 | 2011-07-13 | 上海应用技术学院 | Scanning mechanism for determining smearing effect |
| JP7030570B2 (en) | 2011-06-07 | 2022-03-07 | ファーストキャップ・システムズ・コーポレイション | Energy storage medium for ultracapacitors |
| US10714271B2 (en) | 2011-07-08 | 2020-07-14 | Fastcap Systems Corporation | High temperature energy storage device |
| US11250995B2 (en) | 2011-07-08 | 2022-02-15 | Fastcap Systems Corporation | Advanced electrolyte systems and their use in energy storage devices |
| US11482384B2 (en) | 2011-07-08 | 2022-10-25 | Fastcap Systems Corporation | High temperature energy storage device |
| US11776765B2 (en) | 2011-07-08 | 2023-10-03 | Fastcap Systems Corporation | Advanced electrolyte systems and their use in energy storage devices |
| US11901123B2 (en) | 2011-07-08 | 2024-02-13 | Fastcap Systems Corporation | High temperature energy storage device |
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| Publication number | Publication date |
|---|---|
| JP3491586B2 (en) | 2004-01-26 |
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