JP2001102365A - Vacuum chamber and manufacturing method therefor - Google Patents
Vacuum chamber and manufacturing method thereforInfo
- Publication number
- JP2001102365A JP2001102365A JP2000160569A JP2000160569A JP2001102365A JP 2001102365 A JP2001102365 A JP 2001102365A JP 2000160569 A JP2000160569 A JP 2000160569A JP 2000160569 A JP2000160569 A JP 2000160569A JP 2001102365 A JP2001102365 A JP 2001102365A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum vessel
- alumina
- yttria
- sintered body
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、成膜装置やエッチ
ング装置におけるチャンバやベルジャなどの真空容器に
関するものである。The present invention relates to a vacuum vessel such as a chamber or a bell jar in a film forming apparatus or an etching apparatus.
【０００２】[0002]
【従来の技術】従来、半導体装置の製造工程において
は、反応ガスをプラズマ化して半導体ウエハに薄膜を形
成する成膜装置や微細加工を施すエッチング装置が用い
られており、反応ガスのプラズマ化は高温を要せず比較
的低温で処理ができるという利点を有している。2. Description of the Related Art Conventionally, in a process of manufacturing a semiconductor device, a film forming apparatus for forming a thin film on a semiconductor wafer by converting a reactive gas into a plasma and an etching apparatus for performing fine processing have been used. There is an advantage that processing can be performed at a relatively low temperature without requiring a high temperature.
【０００３】図６は従来の真空容器を用いた装置の概略
を示す模式図であり、１０１は釣鐘状をしたベルジャと
呼ばれる真空容器で、エッチング装置ではこの石英ガラ
スからなる真空容器１０１内に被加工物Ｗを設置し、上
記真空容器１０１内に反応ガスとしてハロゲン系腐食性
ガスを導入し、この反応ガスをプラズマ化することによ
り被加工物Ｗに微細加工を施すようになっていた（特開
平５−２１７９４６号公報参照）。FIG. 6 is a schematic view showing an outline of a conventional apparatus using a vacuum vessel. Reference numeral 101 denotes a bell-shaped vacuum vessel called a bell jar. In an etching apparatus, the vacuum vessel 101 is made of a quartz glass. The workpiece W is installed, a halogen-based corrosive gas is introduced as a reaction gas into the vacuum vessel 101, and the reaction gas is turned into plasma to perform fine processing on the workpiece W (particularly). See JP-A-5-217946).
【０００４】また、成膜装置は図示していないが、内壁
にセラミック片を貼り付けたチャンパと呼ばれる真空容
器内に半導体ウェハを設置し、上記チャンバ内に反応ガ
スとして原料ガスとハロゲン系腐食性ガスを導入し、こ
の反応ガスをプラズマ化することにより被加工物上に薄
膜を形成するようになっていた。Although a film forming apparatus is not shown, a semiconductor wafer is set in a vacuum vessel called a champer having a ceramic piece attached to an inner wall, and a raw material gas and a halogen-based corrosive A thin film is formed on a workpiece by introducing a gas and converting the reaction gas into a plasma.
【０００５】ここで、図６に示す上記真空容器１０１の
頂部には一体的に伸びる導入管１０４を設けてあり、該
導入管１０４の周囲には高周波コイル１０５が設置して
ある。そして、真空容器１０１内には被加工物Ｗを保持
する支持部材１０６を設置してあり、該支持部材１０６
上に被加工物Ｗを載置するとともに、上記高周波コイル
１０５によってマイクロ波を発生させて導入管１０４に
対して垂直に照射することにより導入管１０４に供給さ
れる反応ガスをプラズマ化し、真空容器１０１内へ導く
ようになっている。Here, an introduction pipe 104 extending integrally is provided at the top of the vacuum vessel 101 shown in FIG. 6, and a high-frequency coil 105 is provided around the introduction pipe 104. A support member 106 for holding the workpiece W is installed in the vacuum vessel 101.
A workpiece W is placed thereon, and a microwave is generated by the high-frequency coil 105 to irradiate the microwave vertically to the introduction pipe 104, thereby turning the reaction gas supplied to the introduction pipe 104 into plasma, and It leads to inside 101.
【０００６】そして、これら真空容器１０１の少なくと
もハロゲン系腐食性ガス及び／又はプラズマに曝される
部位には前述したようにセラミックスや石英ガラスが使
用され、その表面はプラズマにより腐食されないように
するために平滑に形成されていた。As described above, ceramics and quartz glass are used at least in the portions of the vacuum vessel 101 which are exposed to the halogen-based corrosive gas and / or plasma, and the surfaces thereof are not corroded by the plasma. Was formed smoothly.
【０００７】[0007]
【発明が解決しようとする課題】ところが、反応ガスと
して使用されているフツ素系や塩素系などのハロゲン系
腐食性ガスは、真空容器１０１の内壁面１０２を構成す
るセラミックスや石英ガラスと反応して内壁面１０２上
にハロゲン化物を生成し、該ハロゲン化物が蒸発したり
プラズマによって摩耗して被加工物Ｗにパーティクルと
して堆積する結果、被加工物Ｗに悪影響を与えるといっ
た課題があった。However, halogen-based corrosive gas such as fluorine-based or chlorine-based gas used as a reaction gas reacts with ceramics or quartz glass constituting the inner wall surface 102 of the vacuum vessel 101. As a result, a halide is generated on the inner wall surface 102, and the halide is evaporated or abraded by the plasma and deposited as particles on the workpiece W. As a result, the workpiece W is adversely affected.
【０００８】このため、少なくともハロゲン系腐食性ガ
ス及び／又はプラズマに曝される部位をセラミックス又
は石英ガラスからなり、その表面に複数個の凹部分を有
する真空容器が提案されている（特願平１０−８７５７
８号公報参照）。For this reason, a vacuum vessel has been proposed in which at least a portion exposed to a halogen-based corrosive gas and / or plasma is made of ceramics or quartz glass, and has a plurality of concave portions on the surface thereof (Japanese Patent Application No. Hei 10-26139). 10-8775
No. 8).
【０００９】しかしながら、これらの提案でも十分な耐
食性を得るに至っておらず、上記ハロゲン化物等は、真
空容器１０１中に導入される混合ガス中の酸素などと反
応して酸化物や酸窒化物となつて真空容器１０１の低温
部に付着し、ある程度堆積すると剥がれ落ちて被加工物
Ｗに堆積する結果、ハロゲン化物と同様に被加工物Ｗに
悪影響を与えている。その為定期的に装置を停止させて
真空容器１０１の内壁面１０２に生成されるハロゲン化
物などの反応生成物を除去するメンテナンスを施さなけ
ればならないといった課題はいまだに残されていた。However, even with these proposals, sufficient corrosion resistance has not been obtained, and the halides and the like react with oxygen and the like in the mixed gas introduced into the vacuum vessel 101 to form oxides and oxynitrides. Incidentally, it adheres to the low-temperature portion of the vacuum vessel 101 and, when deposited to some extent, peels off and accumulates on the workpiece W, thereby affecting the workpiece W similarly to the halide. Therefore, there still remains a problem that maintenance must be performed to periodically stop the apparatus and remove a reaction product such as a halide generated on the inner wall surface 102 of the vacuum vessel 101.
【００１０】又、セラミックスによっては耐食性等の特
性には優れるが、強度の十分でないものがあり、これを
用いた場合真空容器１０１の取り扱い時に真空容器１０
１自身が割れたり、カケが発生し易くなるという問題も
発生していた。[0010] Some ceramics have excellent properties such as corrosion resistance, but have insufficient strength.
There has also been a problem that 1 itself breaks or chipping is apt to occur.
【００１１】[0011]
【課題を解決するための手段】そこで、本発明は上記課
題に鑑み、チャンパやベルジャなどの真空容器におい
て、少なくともハロゲン系腐食性ガス及び／又はプラズ
マに曝される部位をイットリアとアルミナの化合物を主
成分とする焼結体で形成するとともに、その内面に表面
粗さ（Ｒａ）が１．５〜１０μｍの粗面部を備えたこと
を特徴とする。SUMMARY OF THE INVENTION In view of the above-mentioned problems, the present invention provides a vacuum vessel such as a champer or a bell jar with at least a portion exposed to a halogen-based corrosive gas and / or plasma by using a compound of yttria and alumina. It is formed of a sintered body containing a main component, and has a rough surface portion having a surface roughness (Ra) of 1.5 to 10 μm on an inner surface thereof.
【００１２】また、本発明は、上記粗面部を形成するた
めに、ブラストによる表面加工方法、又はラバープレス
における芯金の表面形状を転写させて形成し焼成する製
造方法を用いたことを特徴とする。Further, the present invention is characterized in that in order to form the rough surface portion, a surface processing method by blasting or a manufacturing method in which the surface shape of a metal core in a rubber press is transferred and formed and fired is used. I do.
【００１３】これにより、ハロゲン系腐食性ガスとの反
応によって生成されるハロゲン化物などの反応生成物が
真空容器の内面に発生しても、粗面部としてあることに
より、パーティクルとして剥がれ落ちるまでの時間を長
くして、定期的に行うメンテナンス回数を減らすことに
より装置の稼働効率を高めることができる。Accordingly, even if a reaction product such as a halide generated by the reaction with the halogen-based corrosive gas is generated on the inner surface of the vacuum vessel, the reaction time is a time required for peeling off as particles due to the rough surface. , And the number of regular maintenance operations can be reduced to increase the operation efficiency of the apparatus.
【００１４】更に、本発明は上記真空容器の外側に樹脂
膜を形成したことを特徴とする。Further, the present invention is characterized in that a resin film is formed outside the vacuum vessel.
【００１５】これにより、割れの発生し易い部分に樹脂
膜を成形することにより、機械的衝撃を緩和することが
可能となり、カケや割れを大幅に低減させることが出来
るとともに、使用中に真空容器内面に形成された皮膜
（汚れ）を定期的に薬液を用いて除去（洗浄）する際に
腐食性の強い薬液にさらされるが、樹脂を成膜すること
により、これらに対する耐食性を保持することが出来
る。By forming a resin film on a portion where cracks are likely to occur, mechanical shock can be alleviated, and chips and cracks can be greatly reduced. When the film (dirt) formed on the inner surface is periodically removed (cleaned) using a chemical solution, it is exposed to a highly corrosive chemical solution. By forming a resin film, it is possible to maintain corrosion resistance against these. I can do it.
【００１６】[0016]
【発明の実施の形態】以下、本発明の実施形態について
説明する。Embodiments of the present invention will be described below.
【００１７】図１は本発明の真空容器を用いたエッチン
グ装置の概略を示す模式図であり、１は釣鐘状をしたベ
ルジヤと呼ばれる真空容器で、イットリアとアルミナの
化合物を主成分とする焼結体からなり、この真空容器１
の内壁面は表面粗さ（Ｒａ）１．５〜１０μｍの粗面部
２を有している。また、上記真空容器１の頂部には一体
的に伸びる導入管４を設けてあり、該導入管４の周囲に
は高周波コイル５が設置され、この導入管４の内壁面３
は表面粗さ（Ｒａ）１．５μｍ以下の滑らかな面となっ
ている。FIG. 1 is a schematic view showing an outline of an etching apparatus using a vacuum vessel according to the present invention. Reference numeral 1 denotes a bell-shaped vacuum vessel called a bell-jar, which is a sintered vessel mainly composed of a compound of yttria and alumina. This vacuum container 1
Has a rough surface portion 2 having a surface roughness (Ra) of 1.5 to 10 μm. An introduction pipe 4 extending integrally is provided at the top of the vacuum vessel 1, and a high-frequency coil 5 is installed around the introduction pipe 4.
Is a smooth surface having a surface roughness (Ra) of 1.5 μm or less.
【００１８】そして、真空容器１内には被加工物Ｗを保
持する支持部材６を設置してあり、該支持部材６上に被
加工物Ｗを載置するとともに、上記高周波コイル５によ
ってマイクロ波を発生させて導入管４に対して垂直に照
射することにより導入管４に供給される反応ガスをプラ
ズマ化し、真空容器１内へ導くことにより被加工物Ｗを
エッチングして微細加工を施すようになっている。A support member 6 for holding the workpiece W is installed in the vacuum vessel 1. The workpiece W is placed on the support member 6, and the microwave is Is generated, and the reaction gas supplied to the introduction pipe 4 is turned into plasma by vertically irradiating the introduction pipe 4, and the workpiece W is etched into the vacuum vessel 1 to perform fine processing. It has become.
【００１９】そして、本発明によれば、真空容器１の内
壁面に粗面部２を備えてあることにより、この部分の表
面積を大きくしてあることから、真空容器１を構成する
セラミックスや石英ガラスがハロゲン系腐食性ガスや混
合ガス中の酸素などと反応して反応生成物を生成したと
しても、該反応生成物がパーティクルとして剥がれ落ち
るまでの時間を長くすることができる。Further, according to the present invention, the rough surface portion 2 is provided on the inner wall surface of the vacuum vessel 1, so that the surface area of this portion is increased. Even if reacts with a halogen-based corrosive gas or oxygen in a mixed gas to generate a reaction product, the time required for the reaction product to peel off as particles can be lengthened.
【００２０】ここで粗面部２の表面粗さ（Ｒａ）が１０
μｍを越えると、焼結体へのダメージが大きく焼結体自
身のパーティクルが発生することとなる。又、表面粗さ
（Ｒａ）が１．５μｍ未満になると、反応生成物が落下
しやすくなってしまう。Here, the surface roughness (Ra) of the rough surface portion 2 is 10
If it exceeds μm, the sintered body is greatly damaged, and particles of the sintered body itself are generated. If the surface roughness (Ra) is less than 1.5 μm, the reaction product tends to drop.
【００２１】さらに、真空容器１の導入管４の内壁面３
は表面粗さ（Ｒａ）で１．５μｍ以下とするが、これは
内壁面３に大きな凹凸があると、プラズマエネルギーが
凸や凹のエッジに集中して腐食摩耗させ易く腐食摩耗が
激しくなるからである。また、コイル５直下部の内壁面
３はスパッタされるため、滑らかな面とした方がスパッ
タされにくいという点もある。Further, the inner wall surface 3 of the introduction pipe 4 of the vacuum vessel 1
Is not more than 1.5 μm in surface roughness (Ra). This is because if the inner wall surface 3 has large irregularities, the plasma energy is concentrated on the convex or concave edges and easily corrodes and wears, and the corrosive wear becomes severe. It is. In addition, since the inner wall surface 3 immediately below the coil 5 is sputtered, there is also a point that it is difficult to sputter if a smooth surface is used.
【００２２】これに対し、その他の粗面部２は、被加工
物Ｗをエッチングする際、発生する反応生成物が付着生
成される部分である為に面粗さを粗くして付着生成物の
付着強度を高めるクサビ効果を狙ったものである。On the other hand, since the other rough surface portion 2 is a portion where the reaction product generated when the workpiece W is etched is adhered and generated, the surface roughness is roughened and the adhered product adheres. It aims at the wedge effect to increase the strength.
【００２３】さらに、上記真空容器１を成す焼結体の耐
熱衝撃性を向上させるために、正方晶のジルコニアを５
００〜５００００ｐｐｍ添加することで、上記焼結体の
耐食性を損なうことなく、耐熱衝撃性を高め、半導体・
液晶製造装置等に用いられる部材としての適用範囲をさ
らに広げることができる。Further, in order to improve the thermal shock resistance of the sintered body forming the vacuum vessel 1, tetragonal zirconia is added to the sintered body.
By adding from 0.000 to 50,000 ppm, the thermal shock resistance can be increased without impairing the corrosion resistance of the sintered body, and
The range of application as a member used in a liquid crystal manufacturing apparatus or the like can be further expanded.
【００２４】即ち、ジルコニア成分を５００ｐｐｍ以上
含有させることにより、耐熱衝撃性が向上することを見
いだした。これは、イットリアとアルミナの化合物から
なる焼結体中にジルコニアを分散させることにより、熱
衝撃時に発生するクラックの進展をジルコニアが妨げる
ためである。That is, it has been found that the thermal shock resistance is improved by adding 500 ppm or more of the zirconia component. This is because, by dispersing zirconia in a sintered body made of a compound of yttria and alumina, zirconia hinders the progress of cracks generated at the time of thermal shock.
【００２５】詳細には、焼結体中のジルコ二アでを正方
晶の結晶形態で存在させ、熱衝撃により発生するクラッ
クの進展を正方晶のジルコニアが単斜晶へと相変態を起
こすことでクラックの進展エネルギーを吸収させるので
ある。上記ジルコニアを正方晶で安定化させるための安
定化剤としては、セリアを用いるのが良い。ジルコニア
を安定化させる助剤としてはイットリアやカルシア等も
あるが、助剤としての効果を種々検討した結果、イット
リアは本発明の焼結体においてはアルミナとの合成に使
用されるためジルコニアヘの安定化効果がなく、カルシ
アは耐食性の点で劣つており、セリアが最も効果的であ
った。More specifically, the zirconia in the sintered body is present in the form of a tetragonal crystal, and the propagation of cracks caused by thermal shock is caused by the phase transformation of tetragonal zirconia into monoclinic. This absorbs the energy of crack propagation. Ceria is preferably used as a stabilizer for stabilizing the zirconia with a tetragonal crystal. As an auxiliary agent for stabilizing zirconia, there are yttria and calcia, but as a result of various studies on the effect as an auxiliary agent, yttria is used for synthesis with alumina in the sintered body of the present invention. There was no stabilizing effect, and calcia was inferior in corrosion resistance, with ceria being the most effective.
【００２６】このジルコニアの添加量は、５００００ｐ
ｐｍ以下にする必要がある。これ以上となると、ジルコ
ニアの耐食性は劣ることからハロゲン系腐食性ガス又は
そのプラズマによる腐食を受けやすくなるからである。
ここで、セリアの添加量はジルコニア１００重量％に対
し、１重量％以上添加すれば、ジルコニア成分の安定化
がはかれる。また、セリアの効果としてはランプ加熱に
よりかかる１００〜２００℃の温度に対するジルコニア
の熱劣化を防ぐことにもつながる。The amount of zirconia added is 50,000 p
pm or less. If it is more than this, the corrosion resistance of zirconia is inferior, so that it becomes susceptible to corrosion by halogen-based corrosive gas or its plasma.
Here, if the amount of ceria is 1% by weight or more based on 100% by weight of zirconia, the zirconia component can be stabilized. In addition, the effect of ceria also leads to preventing thermal deterioration of zirconia at a temperature of 100 to 200 ° C. caused by lamp heating.
【００２７】なお、上記真空容器１をなすイツトリアと
アルミナの化合物としては、ＹＡＧ、あるいはＹＡＧと
アルミナ、またはＹＡＧとイツトリアを主結晶とした焼
結体を用いる。As the compound of yttria and alumina constituting the vacuum vessel 1, YAG, or a sintered body containing YAG and alumina or YAG and yttria as a main crystal is used.
【００２８】即ち、焼結体の結晶相を構成するイツトリ
アとアルミナの化合物は、フツ素系ガスと反応すると主
にＹＦ3、ＡＩＦ3を生成し、また、塩素系ガスと反応す
るとＹＣｌ3、ＡｌＣｌ3を生成するが、イットリアのハ
ロゲン化物の融点（ＹＦ3：１１５２℃、ＹＣｌ3：６８
０℃）は従来の石英ガラスあるいはアルミナ焼結体や窒
化アルミニウム焼結体との反応により生成されるハロゲ
ン化物の融点（ＳｉＦ4：−９０℃、ＳｉＣｌ4：−７０
℃、ＡＩＦ3：１０４０℃、ＡＩＣｌ3：１７８℃）より
高いために、ハロゲン系腐食性ガスやプラズマに高温で
曝されたとしても安定した耐食性を具備する。That is, the compound of yttria and alumina constituting the crystal phase of the sintered body mainly produces YF 3 and AIF 3 when reacted with a fluorine-based gas, and YCl 3 and ACl 3 when reacted with a chlorine-based gas. Although AlCl 3 is produced, the melting point of the yttria halide (YF 3 : 1152 ° C., YCl 3 : 68)
0 ° C.) is the melting point (SiF 4 : −90 ° C., SiCl 4 : −70) of the halide produced by the reaction with the conventional quartz glass or alumina sintered body or aluminum nitride sintered body.
℃, AIF 3 : 1040 ° C., AICl 3 : 178 ° C.), so that it has stable corrosion resistance even when exposed to a halogen-based corrosive gas or plasma at a high temperature.
【００２９】しかしながら、イットリア単体では焼結性
が非常に低く、その気孔率は２％以上存在し、緻密体を
得ることはできない。このため、ハロゲン系腐食性ガス
やプラズマに対する耐食性も著しく低下する。また、ア
ルミナの成分についても、イツトリアとの化合物とする
ことによりアルミナ成分のハロゲン化物生成が抑えられ
ることを見出した。そこで、本発明者らは、イットリア
とアルミナの化合物を主体とすることにより、ハロゲン
系腐食性ガスやプラズマとの反応により形成されるハロ
ゲン化物の融点を高くし、また結晶粒径を１０μｍ以下
とすることで、緻密化をはかり、気孔率も０．２％以下
にし耐食性を向上させた。However, sinterability of yttria alone is very low, and its porosity is 2% or more, so that a dense body cannot be obtained. For this reason, the corrosion resistance to halogen-based corrosive gas and plasma is significantly reduced. Also, it has been found that the formation of a halide in the alumina component can be suppressed by using a compound with yttria for the alumina component. Thus, the present inventors have made the compound of yttria and alumina a main component to increase the melting point of the halide formed by the reaction with the halogen-based corrosive gas or plasma, and to reduce the crystal grain size to 10 μm or less. By doing so, densification was achieved, the porosity was reduced to 0.2% or less, and the corrosion resistance was improved.
【００３０】ここで、イットリアとアルミナの組成比率
は、イットリアのモル比をＡ、アルミナのモル比をＢと
したとき、０．３６５≦Ａ≦０．３８５，０．６１５≦
Ｂ≦０．６３５の組成比においてＹＡＧが形成される。
そして、この比率を種々変化させると、ＹＡＧとアルミ
ナ、あるいはＹＡＧとイットリアの混合相が得られる。Here, the composition ratio of yttria and alumina is as follows: when the molar ratio of yttria is A and the molar ratio of alumina is B, 0.365 ≦ A ≦ 0.385, 0.615 ≦
YAG is formed at a composition ratio of B ≦ 0.635.
When this ratio is varied, a mixed phase of YAG and alumina or YAG and yttria is obtained.
【００３１】更に、上記真空容器１の内壁面を望ましい
表面状態とする為に、ブラストによる表面加工方法、又
は芯金を用いたラバープレスを用いるが、その方法は以
下の通りである。Further, in order to bring the inner wall surface of the vacuum vessel 1 into a desired surface state, a surface processing method by blasting or a rubber press using a core metal is used. The method is as follows.
【００３２】ブラスト加工においては、図２に示すよう
に、焼成後の真空容器１の内面にブラストノズル７を挿
入して加工する。このブラストノズル７は５軸制御とな
っており、これによって加工壁９とブラストノズル７間
の距離を常に一定に保つことができる。加工不要部はテ
ープ等でマスキングして砥粒が当たらないようにして加
工する。又、砥粒には粒度３６番のＳｉＣを用い、エア
ー圧力は７０ｐｓｉとした。In the blasting process, as shown in FIG. 2, a blast nozzle 7 is inserted into the inner surface of the baked vacuum vessel 1 for processing. The blast nozzle 7 is controlled by five axes, whereby the distance between the processing wall 9 and the blast nozzle 7 can be always kept constant. Unprocessed portions are processed by masking with a tape or the like so that abrasive grains do not hit. The abrasive grains were made of SiC having a grain size of 36, and the air pressure was 70 psi.
【００３３】この方法によると、ブラストの照射時間を
最適に設定することにより、表面に小さなウネリが生じ
る。このウネリにより表面積を大きくすることが可能に
なり、反応生成物の付着量を増加させることが出来る。
このウネリの状態は図４に示すように粗面部２の表面の
等高線図１０が無数の同心円形状であることが好まし
い。According to this method, by setting the blast irradiation time optimally, small undulations occur on the surface. The swell enables the surface area to be increased, and the amount of reaction products to be deposited can be increased.
As shown in FIG. 4, it is preferable that the contour diagram 10 of the surface of the rough surface portion 2 has an infinite number of concentric shapes as shown in FIG.
【００３４】これは付着生成物と母材ＹＡＧとの線膨張
率が異なる為、付着物が厚くなってくると剥がれようと
する現象が生じるが、表面の等高線が無数の同心円であ
ることは無数の凸凹であることを意味し、付着物のズレ
を防止出来るからである。逆にこの表面の等高線が無数
の平行線の場合は、等高線に垂直の方向にはズレ防止効
果があるが、平行方向には効果が無くズレ易い為、結局
剥がれ易くなるものである。This is because the adhered product and the base material YAG have different coefficients of linear expansion, and the phenomenon that the attached material becomes thicker tends to peel off. However, the contour lines on the surface are infinitely concentric. This is because it is possible to prevent the displacement of the attached matter. Conversely, if the contour lines on this surface are innumerable parallel lines, there is an effect of preventing displacement in the direction perpendicular to the contour lines, but there is no effect in the parallel direction and the displacement is liable to occur.
【００３５】一方、ラバープレス法では図３に示すよう
に芯金８を用いて原料粉末をラバープレス成形すること
により、成形時に粗面部２を形成することが出来る。芯
金８で形成される面は芯金８の表面形状が転写される
為、芯金８の表面粗さを変えることで、セラミック成形
面の表面粗さを変えることが出来る。On the other hand, in the rubber press method, as shown in FIG. 3, the raw material powder is subjected to rubber press molding using the cored bar 8, so that the rough surface portion 2 can be formed at the time of molding. Since the surface shape of the metal core 8 is transferred to the surface formed by the metal core 8, the surface roughness of the ceramic molding surface can be changed by changing the surface roughness of the metal core 8.
【００３６】この場合も、ブラストを用いて芯金８の粗
面部２に相当する加工壁９を所定の表面形状（等高線が
無数の同心円形状）及び面粗さとし、これを用いて成形
後焼成を行うことにより、ブラスト法の場合と同様の効
果を得ることが出来る。Also in this case, the processed wall 9 corresponding to the rough surface portion 2 of the metal core 8 is formed into a predetermined surface shape (infinite number of concentric circles with contour lines) and surface roughness by using blasting, and is fired after molding by using this. By doing so, the same effect as in the case of the blast method can be obtained.
【００３７】一方、従来はアルミナ９９．５％材料が用
いられてきたが、今回ＹＡＧ材料を用いたことにより、
機械的強度、曲げ強度、破壊靭性Ｋ1C、ヒートショック
性が大幅に低下してしまい、装置組み込み時や使用後の
洗浄時のハンドリングにおいて、カケや割れが発生し易
くなってしまうという問題が発生してきた。装置組み込
みの際は取り扱いについての情報伝達が可能で、カケ、
割れの発生率は低く押さえられたが、装置ユーザーやそ
の洗浄業者末端までに、取り扱いを徹底させることは困
難であった。On the other hand, conventionally, 99.5% alumina material has been used.
The mechanical strength, bending strength, fracture toughness K 1C , and heat shock properties are greatly reduced, and there is a problem that chips and cracks are easily generated in handling when assembling the equipment or cleaning after use. I've been. When installing the device, it is possible to transmit information about handling,
Although the incidence of cracking was kept low, it was difficult to thoroughly handle the equipment by the user of the apparatus and the terminal of the cleaning company.
【００３８】この為、図５に示すように真空容器１の外
側に樹脂膜１１を形成することが好ましい。これによ
り、装置組み込み時に金属部分とぶつかったり、洗浄時
に洗浄槽などとぶつかったりした際に、この樹脂膜１１
が衝撃の緩衝材となり真空容器の破損を低減させること
が出来る。この目的のために、樹脂膜１１は応力の集中
し易いコーナー部や形状的に物に当たり易い最外径部の
ような割れの発生し易い部分に成膜すれば良く、これに
より、機械的衝撃を緩和することが可能となり、割れを
大幅に低減させることが出来るものである。For this reason, it is preferable to form the resin film 11 outside the vacuum vessel 1 as shown in FIG. Thereby, when the metal film collides with a metal part at the time of assembling the apparatus or collides with a cleaning tank at the time of cleaning, the resin film 11
Serves as a shock-absorbing material, which can reduce damage to the vacuum vessel. For this purpose, the resin film 11 may be formed at a portion where cracks are likely to occur, such as a corner portion where stress is likely to concentrate or an outermost diameter portion where the shape is likely to hit an object. Can be alleviated, and cracks can be greatly reduced.
【００３９】又、その樹脂膜１１が、膜厚２００〜２０
００μｍのフッ素系の樹脂膜であることが好ましい。こ
のとき、カケの発生率は５％程度に押さえることができ
る。The resin film 11 has a thickness of 200 to 20.
Preferably, it is a 00 μm fluorine-based resin film. At this time, the generation rate of the chip can be suppressed to about 5%.
【００４０】一方、膜厚みが２００μｍ未満になると、
カケの発生率が６０％を越えることとなり、成膜の効果
が低下する。逆に、膜厚みが２０００μｍを越えると、
カケ発生率は５％程度となっているのに対し、膜を厚く
することによりコスト高となってしまう。On the other hand, when the film thickness is less than 200 μm,
The generation rate of the chip exceeds 60%, and the effect of film formation is reduced. Conversely, when the film thickness exceeds 2000 μm,
Although the rate of occurrence of chipping is about 5%, the cost is increased by thickening the film.
【００４１】更に、真空容器１が使用中に内面に皮膜
（汚れ）が形成されるのに対し、定期的に薬液を用いて
この皮膜除去（洗浄）が必要となるが、この際、腐食性
の強い薬液にさらされるので、樹脂膜１１には耐食性が
要求され、耐食性に優れる樹脂膜１１としてフッ素系の
樹脂が好適である。Further, while a film (dirt) is formed on the inner surface of the vacuum vessel 1 during use, it is necessary to periodically remove (clean) the film using a chemical solution. Since the resin film 11 is exposed to a strong chemical solution, the resin film 11 is required to have corrosion resistance, and a fluorine-based resin is suitable for the resin film 11 having excellent corrosion resistance.
【００４２】フッ素系の樹脂としては、ＰＴＦＥ（四フ
ッ化エチレン樹脂）、ＰＦＡ（四フッ化エチレン・パー
フルオロアルコキシエチレン共重合体樹脂）、ＦＥＰ
（四フッ化エチレン・六フッ化プロピレン共重合体樹
脂）等を用いる。Examples of the fluorine resin include PTFE (ethylene tetrafluoride resin), PFA (ethylene tetrafluoride / perfluoroalkoxyethylene copolymer resin), and FEP.
(Ethylene tetrafluoride / propylene hexafluoride copolymer resin) or the like.
【００４３】フッ素系の樹脂膜１１の成膜工程について
は、まず真空容器１から溶剤浸漬又は空焼き等により油
分等を取り除いた後、成膜の密着性を向上させるため
に、ブラスト処理を行い、その後フッ酸等による表面処
理を行う。この後、エアースプレー又は静電粉体スプレ
ー、流動浸漬等により成膜を行ってから、焼成炉にて焼
き付ける。これを繰り返し行い、膜厚みを調整する。In the step of forming the fluorine-based resin film 11, first, oil is removed from the vacuum vessel 1 by immersion in a solvent or baking, and then blasting is performed to improve the adhesion of the film formation. Then, a surface treatment with hydrofluoric acid or the like is performed. Thereafter, the film is formed by air spray, electrostatic powder spray, fluid immersion, or the like, and then baked in a firing furnace. This is repeated to adjust the film thickness.
【００４４】[0044]
【実施例】（実験例１）ここで、本発明の真空容器１と
従来の真空容器１１をＲＩＥタイプのエッチング装置に
組み込んで、６インチサイズの半導体ウエハをエッチン
グする作業を１６０時間（１日８時間を２０日間）繰り
返したあとに真空容器の摩耗具合を測定する実験を行っ
た。(Experimental Example 1) Here, the vacuum vessel 1 of the present invention and the conventional vacuum vessel 11 were incorporated in an RIE type etching apparatus, and the operation of etching a 6-inch semiconductor wafer was performed for 160 hours (one day). After repeating 8 hours for 20 days), an experiment for measuring the degree of wear of the vacuum vessel was performed.
【００４５】本実験では、いずれも真空容器をＹＡＧ焼
結体より形成し、この真空容器内の真空度を１０-4ｔｏ
ｒｒとした状態で、反応ガスとしてＳＦ6を導入すると
ともに、１３．５６ＭＨｚのマイクロ波を照射してプラ
ズマを発生させることにより半導体ウエハにエッチング
を施し、真空容器の摩耗具合を半導体ウエハ上に見られ
るパ−ティクル数をカウントすることにより評価した。In each of the experiments, a vacuum vessel was formed from a YAG sintered body, and the degree of vacuum in the vacuum vessel was 10 -4 ton.
Under the condition of rr, SF 6 was introduced as a reaction gas, and the semiconductor wafer was etched by irradiating 13.56 MHz microwaves to generate plasma, and the degree of wear of the vacuum vessel was observed on the semiconductor wafer. Evaluation was made by counting the number of particles obtained.
【００４６】なお、評価はＳＥＭ（走査電子顕徴鏡）に
より５０００倍に拡大し、視野８０ｍｍ×６０ｍｍの写
真上で０．５ｍｍ以上のパーティクルが５個未満を○、
５個以上で１０個未満を△、１０個以上を×として判断
した。なお、内壁面の面粗さをＲａ１．５、５、１０、
１５μｍにそれぞれ荒らしたものを同時にテストした。
結果は表１に示す通りである。The evaluation was made 5000 times by SEM (Scanning Electron Microscope), and less than 5 particles of 0.5 mm or more on a photograph of 80 mm × 60 mm visual field were evaluated as ○.
5 or more and less than 10 were judged as Δ, and 10 or more were judged as ×. In addition, the surface roughness of the inner wall surface is Ra1.5, 5, 10,
The test pieces each having a thickness of 15 μm were simultaneously tested.
The results are as shown in Table 1.
【００４７】この結果、試料Ｎｏ．１の従来の真空容器
は、内壁面が粗くないために８０時間処理後において既
に５〜１０個以上のパーティクルが発生し、１６０時間
処理後においては１０個以上のパーティクルが発生して
いた。As a result, Sample No. In the first conventional vacuum vessel, 5 to 10 or more particles have already been generated after 80 hours of processing because the inner wall surface is not rough, and 10 or more particles have been generated after 160 hours of processing.
【００４８】又、誠料Ｎｏ．５においては、１時間後か
ら１０個以上のパーティクルが発生しておりこれを分析
してみると、ＹＡＧであることがわかったことから、荒
らし加工により、内壁面にクラックが入り剥がれ易くな
った為と考えられる。Further, sincerity fee No. In No. 5, 10 or more particles were generated from 1 hour later, and when this was analyzed, it was found that the particles were YAG. It is thought that it is.
【００４９】これに対し、試料Ｎｏ．２〜４の本発明の
真空容器１は、内壁面に粗面部２を備えてあるために８
０時間処理後においてもパーティクルを５個未満に抑え
ることができた。又、試料Ｎｏ．３、４においては、１
６０時間処理後においてもパーティクル数を５個未満に
まで抑えることができ優れていた。On the other hand, the sample No. The vacuum vessels 1 of the present invention 2 to 4 have a rough surface portion 2 on the inner wall surface.
Even after the treatment for 0 hour, the number of particles could be suppressed to less than five. Sample No. In 3 and 4, 1
Even after the treatment for 60 hours, the number of particles could be suppressed to less than 5, which was excellent.
【００５０】このように、真空容器の内壁面に粗面部２
を形成することにより、摩耗を低減し、真空容器のメン
テナンス回数を低減できることが判る。As described above, the rough surface portion 2 is formed on the inner wall surface of the vacuum vessel.
It can be seen that, by forming, the abrasion can be reduced and the number of times of maintenance of the vacuum vessel can be reduced.
【００５１】[0051]
【表１】 [Table 1]
【００５２】（実験例２）本発明の真空容器を構成する
焼結体として、ジルコニア５０００ｐｐｍ、セリア５０
ｐｐｍを含んだＹＡＧ、ＹＡＧとイットリアの混合相、
ＹＡＧとアルミナの混合相からなる焼結体と、ＹＡＧを
主結晶相としてジルコニア、セリアの添加量を変化させ
たセラミック焼結体と、比較例として、石英ガラス、純
度９９．５重量％のアルミナ焼結体、及び純度９９．９
重量％のアルミナ焼結体、ジルコニア、セリアを含まな
いＹＡＧをそれぞれ用意し、フツ素系及び塩素系腐食性
ガス下でプラズマに曝した時の耐食性について実験を行
った。(Experimental Example 2) As a sintered body constituting the vacuum vessel of the present invention, zirconia 5000 ppm, ceria 50
ppm of YAG, mixed phase of YAG and yttria,
A sintered body composed of a mixed phase of YAG and alumina, a ceramic sintered body in which YAG is used as a main crystal phase and the added amount of zirconia and ceria is changed, and, as a comparative example, quartz glass and alumina having a purity of 99.5% by weight Sintered body and purity 99.9
A weight percent of sintered alumina, YAG containing no zirconia and ceria were prepared, respectively, and an experiment was performed on the corrosion resistance when exposed to plasma under a fluorine-based or chlorine-based corrosive gas.
【００５３】本実験では、本発明及び比較例の材料を直
径３０ｍｍ×厚み３ｍｍに製作した後、表面にラップ加
工を施して鏡面にしたものを試料とし、この試料をＲＩ
Ｅ（Ｒｅａｃｔｉｖｅ Ｉｏｎ Ｅｔｃｈｉｎｇ）装置
にセットしてＳＦ6ガス雰囲気下及びＣ１2ガス雰囲気下
でプラズマ中に３時間曝した後、処理前後の重量の滅少
量から１分間当たりのエッチングレートを算出した。エ
ッチングレートの数値は、９９．９重量％のアルミナ焼
結体のエッチングレートを１としたときの相対比較で示
す。In this experiment, the materials of the present invention and the comparative example were manufactured to have a diameter of 30 mm × thickness of 3 mm, and then lapping was performed on the surface to obtain a mirror-finished sample.
After being set in an E (Reactive Ion Etching) apparatus and exposed to plasma in an SF 6 gas atmosphere and a C 12 gas atmosphere for 3 hours, the etching rate per minute was calculated from the decrease in weight before and after the treatment. The numerical value of the etching rate is shown by a relative comparison when the etching rate of the 99.9% by weight alumina sintered body is set to 1.
【００５４】各試料の特性及びそれぞれの結果は表１に
示すとおりである。Table 1 shows the characteristics of each sample and the results of each sample.
【００５５】この結果、本発明の耐食性部材Ｎｏ２〜８
は、Ｃｌ2ガス、ＳＦ6ガス、いずれの腐食性ガスに対し
ても、従来の耐食性部材と比較して優れた耐食性を有し
ていた。傾向としては、イットリアの含有量が増えてい
くほど優れた耐食性を示すことがわかる。しかし、イッ
トリアのみのＮｏ１は緻密体が得られず、気孔率も５％
と大きい為ヽ耐食性が劣化している。またＮｏ９〜１２
も、Ｃｌ2ガス、ＳＦ6ガス、いずれの腐食性ガスに対し
ても、従来の耐食性部材と比較して優れた耐食性を有し
ていた。ジルコニアの添加量としては５００００ｐｐｍ
を越えるとＮｏ１３にみられるように、ＳＦ6ガスに対
する耐食性が本発明範囲外のＮｏ１５のアルミナと同程
度までに劣化してしまう。As a result, the corrosion-resistant members No. 2 to 8 of the present invention
Had excellent corrosion resistance to Cl 2 gas and SF 6 gas, both corrosive gases, as compared with conventional corrosion-resistant members. As a tendency, it can be seen that the higher the yttria content, the more excellent the corrosion resistance. However, No. 1 containing only yttria did not provide a dense body and had a porosity of 5%.
The corrosion resistance is degraded. No. 9-12
Also, it had excellent corrosion resistance to Cl 2 gas and SF 6 gas, both corrosive gases, as compared with conventional corrosion-resistant members. 50,000 ppm of zirconia added
If it exceeds the value, as shown in No. 13, the corrosion resistance to SF 6 gas will be degraded to the same degree as that of No. 15 alumina outside the scope of the present invention.
【００５６】[0056]
【表２】 [Table 2]
【００５７】（実験例３）次にＹＡＧ焼結体の表面形状
の違いによる剥がれ易さについての比較を行った。試料
としては、粗面部２を本発明によるブラスト加工及び芯
金８を用いたラバープレス法で作製した真空容器１と、
粗面部２表面の等高線が無数の平行線となる様にダイヤ
ツールを用いて加工した真空容器１、及び従来の何も加
工を施していない真空容器１１を用いて試験を行った。(Experimental Example 3) Next, a comparison was made on the easiness of peeling due to the difference in the surface shape of the YAG sintered body. As a sample, a vacuum vessel 1 in which the rough surface portion 2 was produced by blast processing according to the present invention and a rubber press method using a cored bar 8,
The test was performed using a vacuum vessel 1 processed using a diamond tool so that contour lines on the surface of the rough surface portion 2 become innumerable parallel lines, and a conventional vacuum vessel 11 on which no processing was performed.
【００５８】試験方法は、オートクレーブ中に上記試料
の内壁面に厚み５μｍのフッ化アルミ付着物を全面につ
け、この中に図１に示すようにφ６インチのウエハを入
れて、室温から３００℃の温度サイクルを２０回行い、
ウエハ上のパーティクル数をカウントした。ここで、内
壁面２に加工を施した各試料の表面粗さはＲａ５μｍ、
従来の何も加工していない試料の内壁面２の表面粗さは
１μｍとした。結果を表３に示す。The test method was as follows. A 5 μm-thick aluminum fluoride adhered substance was applied to the entire inner wall surface of the sample in an autoclave, and a wafer having a diameter of 6 inches was put therein as shown in FIG. Perform 20 temperature cycles,
The number of particles on the wafer was counted. Here, the surface roughness of each sample processed on the inner wall surface 2 is Ra 5 μm,
The surface roughness of the inner wall surface 2 of the conventional unprocessed sample was 1 μm. Table 3 shows the results.
【００５９】この結果より、表面の等高線図が無数の平
行線の場合は、等高線に垂直の方向にはズレ防止効果が
あるが、平行方向には効果が無いことから従来の無加工
品と同様剥れが生じパーティクルがカウントされたが、
本発明によるブラスト法及び芯金を用いたラバープレス
法では、付着物の剥れは見られず、パーティクルはカウ
ントされなかった。From these results, when the contour map of the surface is innumerable parallel lines, there is an effect of preventing displacement in the direction perpendicular to the contour lines, but there is no effect in the parallel direction. Peeling occurred and particles were counted,
In the blast method according to the present invention and the rubber press method using a cored bar, no peeling of the attached matter was observed, and no particles were counted.
【００６０】[0060]
【表３】 [Table 3]
【００６１】（実験例４）まずＹＡＧ材料を用いて直径
２００ｍｍφ、厚み１０ｍｍのテストピースを作成し、
上記フッ素樹脂膜１１の成膜工程を用いて、各種樹脂膜
厚みのサンプルを作成した。これをアルカリ、酸、温
水、超音波の順に洗浄する洗浄仕様を用いて各１０回ず
つ洗浄し、その後フッ素樹脂膜１１を除去して、カケ、
割れの数をチェックした。結果は表４の通りであった。
なお、評価は長径５ｍｍ、短径３ｍｍ以上のカケやチッ
ピング数をカウントし、その個数が１０個未満を○、１
０個以上を×として判断した。(Experimental Example 4) First, a test piece having a diameter of 200 mm and a thickness of 10 mm was prepared using YAG material.
Using the film forming process of the fluororesin film 11, samples having various resin film thicknesses were prepared. This is washed 10 times each using a washing specification for washing in the order of alkali, acid, hot water, and ultrasonic wave, and then the fluororesin film 11 is removed.
The number of cracks was checked. The results were as shown in Table 4.
The evaluation was performed by counting the number of chips and chips having a major axis of 5 mm and a minor axis of 3 mm or more.
Zero or more were judged as x.
【００６２】この結果より、フッ素樹脂膜１１の厚みが
２００μｍ以下のサンプルＮｏ２では、チッピング数が
２０個以上となり、樹脂膜の無いＮｏ１と大差の無い結
果であった。又、フッ素樹脂膜１１の厚みが２０００μ
ｍ以上のサンプルＮｏ１０では、チッピング数は２個と
少ないが、レベル的には２０００μｍのサンプルＮｏ９
と変わらず、厚み差による効果は特には見られず、成膜
に要する手間を考えると適当とは言えない。これに対
し、本発明の範囲であるサンプルＮｏ３〜９では、チッ
ピング数は十分小さい範囲にあり、樹脂膜による効果が
顕著であった。From these results, in the sample No. 2 in which the thickness of the fluororesin film 11 was 200 μm or less, the number of chippings was 20 or more, which was not much different from that in No. 1 having no resin film. The thickness of the fluororesin film 11 is 2000 μm.
The number of chippings is as small as 2 in sample No. 10 of m or more, but the level of sample No. 9 of 2000 μm is small.
The effect due to the thickness difference is not particularly observed, and it cannot be said that it is appropriate in view of the labor required for film formation. On the other hand, in samples Nos. 3 to 9, which are the scope of the present invention, the number of chippings was in a sufficiently small range, and the effect of the resin film was remarkable.
【００６３】[0063]
【表４】 [Table 4]
【００６４】[0064]
【発明の効果】以上のように、本発明によればチャンパ
やベルジャをなす真空容器の少なくともハロゲン系腐食
性ガス及び、又はプラズマに曝される部位を、イツトリ
アとアルミナの化合物を主成分とする焼結体で形成し、
その内壁面に表面粗さ（Ｒａ）が１．５〜１０μｍの粗
面部を備えることにより、真空容器を構成する焼結体が
ハロゲン系腐食性ガスや混合ガス中の酸素などと反応し
て反応生成物を生成したとしても、該反応生成物がパー
ティクルとして剥がれ落ちるまでの時間を長くすること
ができ、真空容器のメンテナンス回数を減らし、装置の
稼動効率を高めることができる。As described above, according to the present invention, at least a portion of a vacuum vessel forming a champer or a bell jar which is exposed to a halogen-based corrosive gas and / or plasma contains a compound of yttria and alumina as a main component. Formed of sintered body,
By providing the inner wall surface with a rough surface having a surface roughness (Ra) of 1.5 to 10 μm, the sintered body constituting the vacuum vessel reacts with a halogen-based corrosive gas or oxygen in a mixed gas to react. Even if a product is generated, the time required for the reaction product to peel off as particles can be lengthened, the number of maintenance operations on the vacuum vessel can be reduced, and the operation efficiency of the apparatus can be increased.
【００６５】又、上記焼結体にジルコニアを含むことに
よって、熱衝撃により発生するクラックの進展エネルギ
ーを吸収させることが出来る。Further, by including zirconia in the sintered body, it is possible to absorb crack propagation energy generated by thermal shock.
【００６６】更に、上記粗面部を形成するために、ブラ
ストによる表面加工方法、又は芯金を用いたラバープレ
スを用い焼成する製造方法を用いたことにより、容易に
所望の表面状態を作り出すことが出来る。Further, by using a surface processing method by blasting or a manufacturing method of firing using a rubber press using a metal core to form the rough surface portion, a desired surface state can be easily created. I can do it.
【００６７】又、上記真空容器の外側に樹脂膜を形成す
ることにより、割れの発生し易い部分に成膜することに
より、機械的衝撃を緩和することが可能となり、カケや
割れを大幅に低減させることが出来る。Further, by forming a resin film on the outside of the above-mentioned vacuum container, it is possible to reduce mechanical shock by forming a film on a portion where cracks are likely to occur, thereby greatly reducing chips and cracks. Can be done.
【００６８】更にこの樹脂膜を、膜厚２００〜２０００
μｍのフッ素樹脂膜とすることにより、カケや割れを大
幅に低減させることが出来るとともに、使用中に真空容
器内面に皮膜（汚れ）が形成されるのに対し、定期的に
腐食性の強い薬液を用いてこの皮膜除去（洗浄）する際
にこの薬液にさらされても、フッ素樹脂を成膜すること
により、これらに対する耐食性を保持することが出来
る。Further, this resin film was formed to a thickness of 200 to 2000
By using a μm fluororesin film, chipping and cracking can be greatly reduced, and a film (dirt) is formed on the inner surface of the vacuum vessel during use. Even when the film is removed (washed) using a chemical solution, even if the film is exposed to the chemical solution, the corrosion resistance against the film can be maintained by forming a film of the fluororesin.
【図１】本発明の真空容器を用いたエッチング装置の概
略を示す模式図である。FIG. 1 is a schematic diagram showing an outline of an etching apparatus using a vacuum vessel of the present invention.
【図２】真空容器の内壁面のブラストノズルによる加工
方法を示す模式図である。FIG. 2 is a schematic view showing a method for processing an inner wall surface of a vacuum vessel by a blast nozzle.
【図３】ラバープレス用芯金のブラストノズルによる加
工方法を示す模式図である。FIG. 3 is a schematic view showing a method for processing a core metal for rubber press using a blast nozzle.
【図４】本発明の真空容器における粗面部の表面形状を
示す図である。FIG. 4 is a view showing a surface shape of a rough surface portion in the vacuum vessel of the present invention.
【図５】本発明の他の真空容器を用いたエッチング装置
の例の概略を示す模式図である。FIG. 5 is a schematic diagram showing an outline of an example of an etching apparatus using another vacuum vessel of the present invention.
【図６】従来の真空容器を用いたエッチング装置の概略
を示す模式図である。FIG. 6 is a schematic diagram showing an outline of an etching apparatus using a conventional vacuum vessel.
１：真空容器 ２：粗面部 ３：内壁面 ４：導入管 ５：高周波コイル ６：支持部材 ７：ブラストノズル ８：芯金 ９：加工壁 １０：等高線図 １１：樹脂膜 Ｗ：被加工物 1: vacuum container 2: rough surface part 3: inner wall surface 4: introduction tube 5: high-frequency coil 6: support member 7: blast nozzle 8: core metal 9: processing wall 10: contour map 11: resin film W: workpiece
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０５Ｈ 1/46 Ｈ０１Ｌ 21/302 Ｂ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H05H 1/46 H01L 21/302 B
Claims (9)
容器であって、腐食性ガスやプラズマに曝される部位が
イットリアとアルミナの化合物を主成分とする焼結体か
らなり、その内面に表面粗さ（Ｒａ）が１．５〜１０μ
ｍの粗面部を備えたことを特徴とする真空容器。1. A vacuum vessel in a film forming apparatus, an etching apparatus, or the like, wherein a portion exposed to a corrosive gas or plasma is made of a sintered body mainly composed of a compound of yttria and alumina, and has a surface Roughness (Ra) 1.5 to 10μ
A vacuum container, characterized by having a rough surface portion of m.
えた導入管を有し、該導入管の内面は表面粗さ（Ｒａ）
１．５μｍ以下としたことを特徴とする請求項１記載の
真空容器。2. The vacuum vessel has an introduction tube provided with a high-frequency coil around it, and the inner surface of the introduction tube has a surface roughness (Ra).
2. The vacuum container according to claim 1, wherein the thickness is 1.5 μm or less.
５００〜５００００ｐｐｍ含むことを特徴とする請求項
１又は２に記載の真空容器。3. The vacuum vessel according to claim 1, wherein the sintered body contains 500 to 50,000 ppm of zirconia as an auxiliary component.
含むことを特徴とする請求項３に記載の真空容器。4. The vacuum vessel according to claim 3, wherein said zirconia contains ceria as a stabilizer.
リウム・アルミニウム・ガーネット）、ＹＡＧとアルミ
ナ、またはＹＡＧとイットリアからなることを特徴とす
る請求項１乃至４のいずれかに記載の真空容器。5. The method according to claim 1, wherein the main crystal phase of the sintered body is made of YAG (yttrium aluminum garnet), YAG and alumina, or YAG and yttria. Vacuum container.
請求項１〜５に記載の真空容器。6. The vacuum vessel according to claim 1, wherein a resin film is formed on the outside.
のフッ素樹脂膜であることを特徴とする請求項６に記載
の真空容器。7. The method according to claim 1, wherein the resin film has a thickness of 200 to 2000 μm.
7. The vacuum vessel according to claim 6, wherein the fluorine resin film is made of any one of the above.
容器の製造方法において、イットリアとアルミナの化合
物を主成分とする原料を所定形状に成形し、焼成した
後、その内面にブラスト加工を施して粗面部を備えるこ
とを特徴とする真空容器の製造方法。8. A method for manufacturing a vacuum vessel in a film forming apparatus, an etching apparatus, or the like, comprising forming a raw material containing a compound of yttria and alumina as a main component into a predetermined shape, firing, and then subjecting the inner surface to blasting. A method for manufacturing a vacuum vessel, comprising a rough surface portion.
容器の製造方法において、イットリアとアルミナの化合
物を主成分とする原料を、表面に粗面を備えた芯金を用
いてラバープレス成形することによって芯金の粗面部を
転写した後、焼成することを特徴とする真空容器の製造
方法。9. A method for manufacturing a vacuum vessel in a film forming apparatus, an etching apparatus, or the like, wherein a raw material containing a compound of yttria and alumina as a main component is subjected to rubber press molding using a core metal having a rough surface. A method for manufacturing a vacuum vessel, comprising transferring a rough surface portion of a cored bar, followed by baking.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000160569A JP4544700B2 (en) | 1999-07-29 | 2000-05-30 | Vacuum container and method for manufacturing the same |
| US09/870,282 US6645585B2 (en) | 2000-05-30 | 2001-05-29 | Container for treating with corrosive-gas and plasma and method for manufacturing the same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21485299 | 1999-07-29 | ||
| JP11-214852 | 1999-07-29 | ||
| JP2000160569A JP4544700B2 (en) | 1999-07-29 | 2000-05-30 | Vacuum container and method for manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001102365A true JP2001102365A (en) | 2001-04-13 |
| JP4544700B2 JP4544700B2 (en) | 2010-09-15 |
Family
ID=26520547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000160569A Expired - Fee Related JP4544700B2 (en) | 1999-07-29 | 2000-05-30 | Vacuum container and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4544700B2 (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002087878A (en) * | 2000-07-11 | 2002-03-27 | Toshiba Ceramics Co Ltd | Plasma resistant member and its manufacturing method |
| JP2003133237A (en) * | 2001-10-26 | 2003-05-09 | Kyocera Corp | Shower plate |
| WO2003058672A1 (en) * | 2001-12-21 | 2003-07-17 | Applied Materials, Inc. | Method of fabricating a coated process chamber component |
| JP2005272161A (en) * | 2004-03-23 | 2005-10-06 | Kyocera Corp | Method for manufacturing member for apparatus for producing semiconductor or liquid crystal |
| JP2007012560A (en) * | 2005-07-04 | 2007-01-18 | Tateyama Machine Kk | Plasma treatment device |
| JP2007505509A (en) * | 2003-05-30 | 2007-03-08 | ラム リサーチ コーポレーション | Quartz glass surface finishing method and parts manufactured by the method |
| JP2008239459A (en) * | 2007-03-29 | 2008-10-09 | Covalent Materials Corp | Yttrium-aluminum-garnet-based composite material |
| JP2010174325A (en) * | 2009-01-29 | 2010-08-12 | Kyocera Corp | Discharge electrode unit, discharge electrode assembly and discharge treatment apparatus |
| JP2014159637A (en) * | 2007-08-02 | 2014-09-04 | Applied Materials Inc | Method of coating semiconductor processor with yttrium-containing protective coating |
| JP2016516887A (en) * | 2013-06-05 | 2016-06-09 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Rare earth oxide corrosion resistant coating for semiconductor applications |
| JP2017095350A (en) * | 2007-04-27 | 2017-06-01 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Apparatus and method for reducing erosion rate of surface exposed to halogen-containing plasmas |
| JP2021509770A (en) * | 2018-01-08 | 2021-04-01 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | Components and processing for managing plasma processing by-products |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06196421A (en) * | 1992-12-23 | 1994-07-15 | Sumitomo Metal Ind Ltd | Plasma device |
| JPH1045467A (en) * | 1996-07-31 | 1998-02-17 | Kyocera Corp | Corrosion resistant member |
| JPH1072684A (en) * | 1996-06-11 | 1998-03-17 | Ngk Insulators Ltd | Passing tube for gas for generating plasma |
| JPH10160693A (en) * | 1996-10-04 | 1998-06-19 | Toyota Motor Corp | Three-dimensional form measurement method |
| JPH10163180A (en) * | 1996-10-02 | 1998-06-19 | Matsushita Electron Corp | Equipment for manufacturing electronic device and manufacture of electronic device |
| JPH10236871A (en) * | 1997-02-26 | 1998-09-08 | Kyocera Corp | Plasma resistant member |
| JPH1197430A (en) * | 1997-07-14 | 1999-04-09 | Applied Materials Inc | High-density plasma processing chamber |
| JPH11157916A (en) * | 1997-11-28 | 1999-06-15 | Kyocera Corp | Corrosion-resistant member |
| JP2000191370A (en) * | 1998-12-28 | 2000-07-11 | Taiheiyo Cement Corp | Member for treatment chamber |
| JP2000228398A (en) * | 1998-11-30 | 2000-08-15 | Kawasaki Steel Corp | Processor, method of preventing peeling of adhesive using the same processor and manufacture of semiconductor device, structural elements of the same device and focusing ring |
-
2000
- 2000-05-30 JP JP2000160569A patent/JP4544700B2/en not_active Expired - Fee Related
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06196421A (en) * | 1992-12-23 | 1994-07-15 | Sumitomo Metal Ind Ltd | Plasma device |
| JPH1072684A (en) * | 1996-06-11 | 1998-03-17 | Ngk Insulators Ltd | Passing tube for gas for generating plasma |
| JPH1045467A (en) * | 1996-07-31 | 1998-02-17 | Kyocera Corp | Corrosion resistant member |
| JPH10163180A (en) * | 1996-10-02 | 1998-06-19 | Matsushita Electron Corp | Equipment for manufacturing electronic device and manufacture of electronic device |
| JPH10160693A (en) * | 1996-10-04 | 1998-06-19 | Toyota Motor Corp | Three-dimensional form measurement method |
| JPH10236871A (en) * | 1997-02-26 | 1998-09-08 | Kyocera Corp | Plasma resistant member |
| JPH1197430A (en) * | 1997-07-14 | 1999-04-09 | Applied Materials Inc | High-density plasma processing chamber |
| JPH11157916A (en) * | 1997-11-28 | 1999-06-15 | Kyocera Corp | Corrosion-resistant member |
| JP2000228398A (en) * | 1998-11-30 | 2000-08-15 | Kawasaki Steel Corp | Processor, method of preventing peeling of adhesive using the same processor and manufacture of semiconductor device, structural elements of the same device and focusing ring |
| JP2000191370A (en) * | 1998-12-28 | 2000-07-11 | Taiheiyo Cement Corp | Member for treatment chamber |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4688307B2 (en) * | 2000-07-11 | 2011-05-25 | コバレントマテリアル株式会社 | Plasma-resistant member for semiconductor manufacturing equipment |
| JP2002087878A (en) * | 2000-07-11 | 2002-03-27 | Toshiba Ceramics Co Ltd | Plasma resistant member and its manufacturing method |
| JP2003133237A (en) * | 2001-10-26 | 2003-05-09 | Kyocera Corp | Shower plate |
| WO2003058672A1 (en) * | 2001-12-21 | 2003-07-17 | Applied Materials, Inc. | Method of fabricating a coated process chamber component |
| CN1294615C (en) * | 2001-12-21 | 2007-01-10 | 应用材料有限公司 | Method of fabricating coated process chamber component |
| KR100951338B1 (en) * | 2001-12-21 | 2010-04-08 | 어플라이드 머티어리얼즈 인코포레이티드 | Method of fabricating a coated process chamber component |
| US8318035B2 (en) | 2003-05-30 | 2012-11-27 | Lam Research Corporation | Methods of finishing quartz glass surfaces and components made by the methods |
| JP2007505509A (en) * | 2003-05-30 | 2007-03-08 | ラム リサーチ コーポレーション | Quartz glass surface finishing method and parts manufactured by the method |
| JP4709158B2 (en) * | 2003-05-30 | 2011-06-22 | ラム リサーチ コーポレーション | Quartz glass surface finishing method and parts manufactured by the method |
| JP2005272161A (en) * | 2004-03-23 | 2005-10-06 | Kyocera Corp | Method for manufacturing member for apparatus for producing semiconductor or liquid crystal |
| JP4522117B2 (en) * | 2004-03-23 | 2010-08-11 | 京セラ株式会社 | Method for manufacturing processing container member used in semiconductor or liquid crystal manufacturing apparatus |
| JP4686668B2 (en) * | 2005-07-04 | 2011-05-25 | 立山マシン株式会社 | Plasma processing method and apparatus |
| JP2007012560A (en) * | 2005-07-04 | 2007-01-18 | Tateyama Machine Kk | Plasma treatment device |
| JP2008239459A (en) * | 2007-03-29 | 2008-10-09 | Covalent Materials Corp | Yttrium-aluminum-garnet-based composite material |
| JP2017095350A (en) * | 2007-04-27 | 2017-06-01 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Apparatus and method for reducing erosion rate of surface exposed to halogen-containing plasmas |
| JP2014159637A (en) * | 2007-08-02 | 2014-09-04 | Applied Materials Inc | Method of coating semiconductor processor with yttrium-containing protective coating |
| JP2010174325A (en) * | 2009-01-29 | 2010-08-12 | Kyocera Corp | Discharge electrode unit, discharge electrode assembly and discharge treatment apparatus |
| JP2016516887A (en) * | 2013-06-05 | 2016-06-09 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Rare earth oxide corrosion resistant coating for semiconductor applications |
| US10734202B2 (en) | 2013-06-05 | 2020-08-04 | Applied Materials, Inc. | Rare-earth oxide based erosion resistant coatings for semiconductor application |
| JP2021509770A (en) * | 2018-01-08 | 2021-04-01 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | Components and processing for managing plasma processing by-products |
| JP7333780B2 (en) | 2018-01-08 | 2023-08-25 | ラム リサーチ コーポレーション | Components and processes for managing plasma processing byproducts |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4544700B2 (en) | 2010-09-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6645585B2 (en) | Container for treating with corrosive-gas and plasma and method for manufacturing the same | |
| CN108884546B (en) | Coated semiconductor processing component with resistance to chlorine and fluorine plasma erosion and composite oxide coating thereof | |
| KR101304082B1 (en) | Corrosion resistant multilayer member | |
| JP4213790B2 (en) | Plasma-resistant member and plasma processing apparatus using the same | |
| US6368410B1 (en) | Semiconductor processing article | |
| CN112779488A (en) | Yttrium fluoride spray coating, spray material for the same, and corrosion-resistant coating including the spray coating | |
| JPH104083A (en) | Anticorrosive material for semiconductor fabrication | |
| WO2006023894A2 (en) | Semiconductor processing components and semiconductor processing utilizing same | |
| JP2003146751A (en) | Plasma-resistant member and method of producing the same | |
| JP4544700B2 (en) | Vacuum container and method for manufacturing the same | |
| JP3164559B2 (en) | Processing container material | |
| EP1314188A2 (en) | Process for cleaning ceramic articles | |
| US20240026515A1 (en) | Yttrium-fluoride-based sprayed coating, sprayed member, and method for producing yttrium-fluoride-based sprayed coating | |
| JP2003212598A (en) | Quartz glass and ceramic part, and manufacturing method | |
| JP3046288B1 (en) | Components for semiconductor / liquid crystal manufacturing equipment | |
| JP3456915B2 (en) | Components for semiconductor manufacturing equipment | |
| JP3808245B2 (en) | Chamber component for semiconductor manufacturing | |
| JP5365165B2 (en) | Wafer | |
| WO2002027771A1 (en) | Semiconductor industry-use silica glass jig and production method therefor | |
| KR100972567B1 (en) | Plasma resistant part and manufacturing method the same | |
| JP5077573B2 (en) | Wafer | |
| JP2001148370A (en) | Anti-corrosion and anti-plasma ceramic member | |
| JP2002222803A (en) | Corrosion resistant member for manufacturing semiconductor | |
| JP4522117B2 (en) | Method for manufacturing processing container member used in semiconductor or liquid crystal manufacturing apparatus | |
| JP7196343B1 (en) | Glass base material having base film for film adhesion, and glass part provided with film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070411 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20071022 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100309 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100508 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100601 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100629 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130709 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4544700 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| LAPS | Cancellation because of no payment of annual fees |