JP2001068486A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

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Publication number
JP2001068486A
JP2001068486A JP23696599A JP23696599A JP2001068486A JP 2001068486 A JP2001068486 A JP 2001068486A JP 23696599 A JP23696599 A JP 23696599A JP 23696599 A JP23696599 A JP 23696599A JP 2001068486 A JP2001068486 A JP 2001068486A
Authority
JP
Japan
Prior art keywords
lead frame
semiconductor chip
copper
polyimide
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23696599A
Other languages
English (en)
Other versions
JP3804747B2 (ja
Inventor
Masahiro Tsuji
正博 辻
Tsunemori Yamaguchi
恒守 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP23696599A priority Critical patent/JP3804747B2/ja
Priority to US09/644,572 priority patent/US6404066B1/en
Publication of JP2001068486A publication Critical patent/JP2001068486A/ja
Application granted granted Critical
Publication of JP3804747B2 publication Critical patent/JP3804747B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

(57)【要約】 【課題】 銅メッキした銅合金のリードフレームを用
い、鉄合金リードフレーム品以上の信頼性を有し、しか
も低コストで半導体装置を得ること。 【解決手段】 銅合金に銅メッキを行ったリードフレー
ム１上に、ポリイミド系の接着剤３を用いて半導体チッ
プ４を接合し、金又は銅を主成分としたワイヤー５を用
いて半導体チップ４の電極とリードフレーム２の各端子
を接続した後、半導体チップとワイヤー、リードフレー
ムのワイヤーとの接合部を樹脂封止して半導体装置を得
る。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、半導体装置、とく
に半導体チップを銅合金からなるリードフレーム上に接
合するのにポリイミド系の接着剤（ペースト）を用いた
ことを特徴とする半導体装置及びその製造方法に関する
ものである。
【０００２】
【従来の技術】半導体装置は、図３に示すように、一般
にリードフレームのダイパット１上にＡｇペースト等の
接着剤３で半導体チップ４を接合し、半導体チップ４の
電極パット６とリードフレームの各端子のインナーリー
ド部２を金線等５で接続し、それを封止樹脂で封止した
構造を有している。又、リードフレームのインナーリー
ド部２の一部分（図のハッチングの部分）には大気中で
金線５とインナーリード部が接続できるように、一般に
Ａｇメッキが施されている。ところで、パッケージが非
常に小さい場合や、パッケージに比べダイパットが非常
に大きい場合、インナーリードが非常に短くなる設計し
か出来ず、この様な状態でインナーリード部にＡｇメッ
キを施すと、Ａｇメッキがインナーリードでけで納まら
ず、パッケージの外まで漏れてしまう不具合が発生す
る。図４は、図３のインナーリード２の一部を拡大して
示した図であって、図中Ｐはパッケージラインを示して
いる。図示のようにメッキエリアの小さなリードフレー
ムにメッキを行った場合は、メッキがメッキエリアのＭ
ＡＸ値を越え、パッケージ外部に漏れることは避けられ
ない。Ａｇメッキがパッケージ外部まで漏れてしまう
と、図５に示すようにＡｇのマイグレーションや耐湿信
頼性の劣化という信頼性上の重大な不具合を発生させ
る。以上の理由から、パッケージが非常に小さい場合や
パッケージに比べダイパットが非常に大きい場合は、リ
ードフレームのインナーリード部２の一部にＡｇメッキ
を施すには非常に困難であり、Ａｇメッキの代わりにＣ
ｕメッキを施すのが一般的である。
【０００３】ここで、Ｃｕメッキを施したリードフレー
ムについてみると、それが例えば４２Ｎｉ等の鉄系合金
にＣｕメッキを施したリードフレームである場合は、半
導体チップの裏面に金を１５０００〜３００００Å程度
蒸着し還元雰囲気中で４５０〜５５０°Ｃ程度の温度を
かけ、半導体チップをこの金によって直接リードフレー
ムのダイパット上に接合するか、ダイパット上にＡｕー
Ｓｉを用いて半導体チップを接合する。続いて半導体チ
ップの電極パットとリードフレームのインナーリード部
をこれも還元雰囲気下で３００°Ｃ程度の温度で金又は
銅を主成分としたワイヤーで接続し半導体チップ、ワイ
ヤー、リードフレームのインナーリード部を樹脂封止し
て半導体装置を形成している。
【０００４】
【発明が解決しようとする課題】このように銅メッキし
たリードフレームが鉄合金系のリードフレームの場合に
は、チップ裏面に金を１５０００〜３００００Å程度蒸
着し、その金で直接接合するダイレクトボンディング
か、あるいはＡｕーＳｉプリフォームを用いてボンディ
ングするかのいずれかで、半導体チップとリードフレー
ムとの接合が可能である。しかしながら、銅メッキした
リードフレームが銅合金の場合には、ダイレクトボンデ
ィングやＡｕーＳｉダイボンディングを行おうとして
も、半導体チップとリードフレームの熱膨張係数が大き
く異なるため、半導体チップとリードフレームとの接合
時の温度変化に伴う熱膨張・収縮により、半導体チップ
にクラックが発生してしまうため、この方法では製造で
きない。また、銅フレームと半導体チップを接合すると
きに、通常使用されるエポキシ樹脂系のＡｇペーストで
は、１５０°Ｃ〜２００°Ｃ程度でＡｇペーストを硬化
させ、その後２００〜２５０°Ｃ程度でワイヤボンディ
ングを行うが、本半導体装置は、リードフレームのイン
ナーリード部にＡｇメッキを施していないため、リード
フレーム表面の酸化膜を除去するために還元を行う必要
がある。短時間で還元するためには、３００°Ｃ以上の
温度を与える必要がある。ところが、エポシキ樹脂系の
Ａｇペーストは３００°Ｃ以上の温度をかけると、樹脂
が熱分解し半導体チップとリードフレームとの接合信頼
性が著しく低下する。また、これを防ぐためにリードフ
レームに与える温度を３００°未満に抑えると、今度
は、リードフレームのインナーリード部と金線の接合信
頼性が大きく低下し、いずれにしろ、銅合金系のリード
フレームを用いた半導体装置については十分に信頼性が
確保された製造方法は確立されていなかった。そこで、
本発明の目的は、銅合金リードフレームを用い、鉄合金
リードフレーム品よりも高い信頼性を確保できる半導体
装置を低コストな方法で得ることである。
【０００５】
【課題を解決するための手段】本発明は、銅合金に銅メ
ッキを行ったリードフレームとチップとの接合にポリイ
ミド系の接着剤を採用したことを特徴とするものであっ
て、請求項１の発明は、銅合金に銅メッキを行ったリー
ドフレーム上に、ポリイミド系の接着剤を用いて半導体
チップを接合し、金又は銅を主成分としたワイヤーを用
いて半導体チップの電極とリードフレームの各端子を接
続し、半導体チップとワイヤー、リードフレームのワイ
ヤーとの接合部を樹脂封止したことを特徴とする半導体
装置である。
【０００６】請求項２の発明は、ポリイミド系ペースト
を銅合金に銅メッキを行ったリードフレーム上に塗布し
て半導体チップを登載し、排気により真空雰囲気を維持
しつつ加熱して前記ポリイミド系ペーストを硬化し、次
に、還元しつつ半導体チップの電極とリードフレームの
各端子のワイヤーボンディングを行うことを特徴とする
半導体装置の製造方法である。
【０００７】請求項３の発明は、ポリイミド系ペースト
を銅合金に銅メッキを行ったリードフレーム上に塗布し
て半導体チップを登載し、排気により１０−１〜１０
−２Torr程度の真空雰囲気を維持しつつ約３００°Ｃ、
約６０分間 加熱して前記ポリイミド系ペーストを硬化
し、次に、約３００〜４５０°Ｃのフォーミングガス中
で還元しつつ半導体チップの電極とリードフレームの各
端子のワイヤーボンディングを行うことを特徴とする半
導体装置の製造方法である。
【０００８】請求項４の発明は、請求項３に記載された
半導体装置の製造方法において、前記フォーミングガス
はＨ２がおおむね５〜１０％、残りがＮ２から成るもの
であることを特徴とする半導体装置の製造方法である。
【０００９】
【発明の実施の形態】ポリイミド系接着剤はＡｕーＳｉ
と比べ、弾性率が約１／２０であること及び、４５０°
Ｃの高温下でも数分程度なら耐えることが出来るため、
本発明は、ポリイミド系接着剤のこの特性に着目して、
これを銅合金からなるリードフレームと半導体チップと
の接着剤として用いたものである。即ち、本発明に係る
銅合金からなるリードブレームは、そのボンディングエ
リアには、既に述べたように銀メッキができないため銅
メッキが施されており、銅に直接金または銅ワイヤーを
付けて合金化しなければならない。ところがそのままワ
イヤーボンディングを行うと、銅は熱によって酸化が促
進される結果、そのままではワイヤーボンディングを行
うことはできない。そこで、フォーミングガス中で銅フ
レームの酸化を還元しながらワイヤーボンディングを行
うものであって、本発明は、銅合金系のリードフレーム
と半導体チップをポリイミド系の接着剤を用いて接合さ
せ、その後、フォーミングガス中で、銅の酸化を還元
し、かつフォーミングガス中でワイヤーボンディングを
行うようにしたのである。
【００１０】（実施例）本発明に係る半導体装置の製造
工程について図１を参考にして説明する。まず、ポリイ
ミド系ペースト３を、ポッティングにより銅メッキを施
した銅合金からなるリードフレーム１のダイパット部１
ａに塗布し（図１Ａ）、その上に半導体チップ４を登載
する（図１Ｂ）。次に、ポリイミド系ペースト３で接合
されたリードフレーム１と半導体チップ４を、約１０
−１〜１０−２Torrの真空オーブン中において、約１２
０°Ｃで６０分間程度の加熱し、ポリイミド系ペースト
中の溶剤（例えばＮーメチルピロリドン）を飛ばす。溶
剤を飛ばし終えたところで、次にポリイミド系ペースト
を完全に硬化させるため、約３００°Ｃで約６０分間加
熱する。以上の加熱工程中、銅フレームの酸化を抑制
し、かつ、硬化中のペーストから発生するアウトガスが
銅フレームやチップに付着させなようにするため、真空
オーブンは常に吸引排気を行う。
【００１１】ポリイミド系ペーストが完全に硬化したと
ころで、図２Ａの斜視図及び図２Ｂの側面図に示すよう
にメッキした銅の表面に直接金線５を付け合金化させて
ワイヤーボンディングを行う。既に述べたように、ポリ
イミド系接着剤は、４５０°Ｃの高温下でも数分なら十
分耐えることができるので、この工程は、３００〜４５
０°Ｈ２、５〜１０％、残りがＮ２のフォーミングガス
中において銅の酸化を防止しながらを行う。因に、銀ペ
ーストは３００°Ｃ程度で熱分解してしまうため、この
ワイヤーボンディング工程の実施は不可能であり、使用
することはできない。このように、ポリイミド系接着剤
はＡｕーＳｉと比べ、弾性率が約１／２０であることか
ら、リードフレームと半導体チップとの熱膨張係数差が
大きく異なっていてもチップクラックは発生することは
なく、また、ポリイミド系接着剤３は４５０°Ｃの高温
下での還元にも耐えることができるため、それを用いる
ことにより銅メッキした銅合金からなるリードフレーム
に対しワイヤー（金線）５を取り付けることができる。
このようにして作製された半導体装置のリードフレーム
１、半導体チップ４、金線５、インナーリード２の一部
を例えば図３に示す従来のものと同様にパッケージライ
ンに沿って樹脂封止してパッケージを作製することが出
来る。
【００１２】
【発明の効果】請求項１に対応する効果： ポリイミド
系接着剤を用いたため、銀メッキを施していない、つま
り銅メッキを施した銅合金のリードフレームを用い、鉄
合金リードフレーム品以上の信頼性を有した半導体装置
を容易に得ることができる。 請求項２乃至５に対応する効果： 銅の酸化を防止する
ことができるため、銀メッキを施していないリードフレ
ーム、つまり銅合金リードフレームに銅メッキを施した
リードフレームを用いて半導体チップのパッケージング
を行うことによって半導体装置を製造することができ
る。
【図面の簡単な説明】
【図１】 本発明の半導体装置の製造工程を説明するた
めの図である。
【図２】 本発明の半導体を示す図であって、図２Ａは
その斜視図でありかつ、図２Ｂはその側面図である。
【図３】 従来の半導体装置を説明するための図であ
る。
【図４】 図３の一部拡大図である。
【図５】 リード間に発生する銀のマイグレーションを
説明するための図である。
【符号の説明】
１…リードブレーム、１ａ…ダイパット部、２…インナ
ーリード部、３…ペースト（ポリイミド系接着剤）、４
…半導体チップ、５…ワイヤー（金線）、６…電極パッ
ト

Claims (4)

    【特許請求の範囲】
  1. 【請求項１】 銅合金に銅メッキを行ったリードフレ
    ーム上に、ポリイミド系の接着剤を用いて半導体チップ
    を接合し、 金又は銅を主成分としたワイヤーを用いて半導体チップ
    の電極とリードフレームの各端子を接続し、半導体チッ
    プとワイヤー、リードフレームのワイヤーとの接合部を
    樹脂封止したことを特徴とする半導体装置。
  2. 【請求項２】 ポリイミド系ペーストを銅合金に銅メッ
    キを行ったリードフレーム上に塗布して半導体チップを
    登載し、排気により真空雰囲気を維持しつつ加熱して前
    記ポリイミド系ペーストを硬化し、次に、還元雰囲気中
    で半導体チップの電極とリードフレームの各端子のワイ
    ヤーボンディングを行うことを特徴とする半導体装置の
    製造方法。
  3. 【請求項３】 ポリイミド系ペーストを銅合金に銅メッ
    キを行ったリードフレーム上に塗布して半導体チップを
    登載し、排気により１０−１〜１０−２Torr程度の真空
    雰囲気を維持しつつ約３００°Ｃ、約６０分間 加熱し
    て前記ポリイミド系ペーストを硬化し、次に、約３００
    〜４５０°Ｃのフォーミングガス中で還元しつつ半導体
    チップの電極とリードフレームの各端子のワイヤーボン
    ディングを行うことを特徴とする半導体装置の製造方
    法。
  4. 【請求項４】 請求項３に記載された半導体装置の製造
    方法において、前記フォーミングガスは、Ｈ２がおおむ
    ね５〜１０％、残りがＮ２から成るものであることを特
    徴とする半導体装置の製造方法。
JP23696599A 1999-08-24 1999-08-24 半導体装置の製造方法 Expired - Fee Related JP3804747B2 (ja)

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US09/644,572 US6404066B1 (en) 1999-08-24 2000-08-24 Semiconductor device and process for manufacturing the same

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JP23696599A JP3804747B2 (ja) 1999-08-24 1999-08-24 半導体装置の製造方法

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JP2009043940A (ja) * 2007-08-09 2009-02-26 Morioka Seiko Instruments Inc 半導体製造方法

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US7489219B2 (en) * 2003-07-16 2009-02-10 Marvell World Trade Ltd. Power inductor with reduced DC current saturation
US8324872B2 (en) * 2004-03-26 2012-12-04 Marvell World Trade, Ltd. Voltage regulator with coupled inductors having high coefficient of coupling
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JP2009043940A (ja) * 2007-08-09 2009-02-26 Morioka Seiko Instruments Inc 半導体製造方法

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